CN210668376U - Display substrate and display device - Google Patents
Display substrate and display device Download PDFInfo
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- CN210668376U CN210668376U CN201922325947.0U CN201922325947U CN210668376U CN 210668376 U CN210668376 U CN 210668376U CN 201922325947 U CN201922325947 U CN 201922325947U CN 210668376 U CN210668376 U CN 210668376U
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- thin film
- film transistor
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Abstract
The utility model provides a display substrate and display device belongs to and shows technical field. The display substrate comprises a switch thin film transistor and a drive thin film transistor which are positioned on a substrate, and the orthographic projection of the switch thin film transistor on the substrate is at least partially overlapped with the orthographic projection of the drive thin film transistor on the substrate. The technical scheme of the utility model can improve display device's aperture opening ratio.
Description
Technical Field
The utility model relates to a show technical field, especially indicate a display substrate and display device.
Background
The LTPS (Low Temperature Poly-Silicon) TFT (Thin film transistor) has the advantage of high mobility, but also has the disadvantages of high leakage current and large power consumption, and the LTPO (Low Temperature Poly-Oxide) structure can improve the defects of the LTPS TFT structure by applying the special composition of the LTPS TFT on the Driving TFT and the Oxide TFT on the Switching TFT, and achieves the purpose of reducing the power consumption by using a lower Driving frequency (1-30 Hz). But the complicated TFT structure may result in a decrease in the pixel aperture ratio.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is to provide a display substrate and display device can improve display device's aperture opening ratio.
In order to solve the above technical problem, embodiments of the present invention provide the following technical solutions:
in one aspect, a display substrate is provided, which includes a switching thin film transistor and a driving thin film transistor on a substrate, and an orthographic projection of the switching thin film transistor on the substrate at least partially overlaps with an orthographic projection of the driving thin film transistor on the substrate.
Optionally, the switching thin film transistor is an oxide thin film transistor, and the driving thin film transistor is a low-temperature polysilicon thin film transistor.
Optionally, the gate of the switching thin film transistor and the orthographic projection of the gate of the driving thin film transistor on the substrate at least partially overlap.
Optionally, when the switching thin film transistor is an oxide thin film transistor, and the driving thin film transistor is a low-temperature polysilicon thin film transistor, the gate of the driving thin film transistor is located on one side of the active layer of the oxide thin film transistor, which faces the substrate, and an orthographic projection of the active layer on the substrate falls into an orthographic projection of the gate of the driving thin film transistor on the substrate.
Optionally, the source and the drain of the switching thin film transistor and the drain of the driving thin film transistor are arranged in the same layer and material.
Optionally, the gate of the switching thin film transistor is electrically connected to the gate of the driving thin film transistor.
Optionally, the gate of the switching thin film transistor is multiplexed as the gate of the driving thin film transistor.
Optionally, when the switching thin film transistor is an oxide thin film transistor, and the driving thin film transistor is a low-temperature polycrystalline silicon thin film transistor, the active layer of the switching thin film transistor is located on one side of the gate away from the substrate, and the active layer of the driving thin film transistor is located on one side of the gate facing the substrate.
Optionally, the source and the drain of the switching thin film transistor and the source and the drain of the driving thin film transistor are arranged in the same layer and material.
The embodiment of the utility model also provides a display device, include as above display substrate.
The embodiment of the utility model has the following beneficial effect:
in the above scheme, the orthographic projection of the switch thin film transistor on the substrate base plate is at least partially overlapped with the orthographic projection of the drive thin film transistor on the substrate base plate, so that the occupied area of the switch thin film transistor and the drive thin film transistor can be reduced, the aperture opening ratio of the display base plate is improved, and further a display product with high pixel density can be realized.
Drawings
FIG. 1 is a schematic cross-sectional view of a related art display substrate;
fig. 2 is a schematic plan view of a display substrate according to an embodiment of the present invention;
fig. 3 is a schematic cross-sectional view of a display substrate according to an embodiment of the present invention;
fig. 4 and 5 are signals input to the gate of the thin film transistor according to the embodiment of the present invention;
fig. 6 is a schematic plan view of a second display substrate according to an embodiment of the present invention;
fig. 7 is a schematic cross-sectional view of a second display substrate according to an embodiment of the present invention.
Reference numerals
1 active layer of driving thin film transistor
2 source drain of driving thin film transistor
3 gate of driving thin film transistor
4 first via hole
5 active layer of switching thin film transistor
Source and drain of 6-switch thin film transistor
7 second via hole
8-switch thin film transistor grid
9 pixel electrode
10 third via hole
11 substrate base plate
12 first buffer layer
13 first gate insulating layer
14 first interlayer insulating layer
15 second buffer layer
16 second gate insulating layer
17 second interlayer insulating layer
18 flat layer
21 substrate base plate
22 buffer layer
23 Gate insulating layer
24 interlayer insulating layer
25 flat layer
Detailed Description
In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following detailed description will be given with reference to the accompanying drawings and specific embodiments.
Fig. 1 is a schematic cross-sectional view of a display substrate of the related art, and as shown in fig. 1, the display substrate includes a switching thin film transistor and a driving thin film transistor on a substrate 11, the switching thin film transistor includes an active layer 4, a source drain 6 and a gate 8; the driving thin film transistor comprises an active layer 1, a source drain electrode 2 and a grid electrode 3, a pixel electrode 9 is connected with a drain electrode of the driving thin film transistor, and the orthographic projections of the switching thin film transistor and the driving thin film transistor on a substrate 11 do not have an overlapping area, so that the switching thin film transistor and the driving thin film transistor occupy a larger area, the aperture ratio of the display substrate is smaller, and the pixel density of the display substrate is influenced.
An embodiment of the utility model provides a display substrate and display device can improve display device's aperture opening ratio.
An embodiment of the utility model provides a display substrates, including switch thin film transistor and the drive thin film transistor who is located substrate base plate, switch thin film transistor is in orthographic projection on the substrate base plate with drive thin film transistor is in orthographic projection on the substrate base plate at least partially overlaps.
In this embodiment, the orthographic projection of the switching thin film transistor on the substrate base plate is at least partially overlapped with the orthographic projection of the driving thin film transistor on the substrate base plate, so that the occupied area of the switching thin film transistor and the driving thin film transistor can be reduced, the aperture opening ratio of the display base plate is improved, and further, a display product with high pixel density can be realized.
Because the oxide thin film transistor has the advantages of extremely low electric leakage and low power consumption, the oxide thin film transistor can be adopted as the switching thin film transistor, and specifically, the active layer of the oxide thin film transistor can be IGZO; since the low temperature polysilicon thin film transistor has an advantage of high mobility, the driving thin film transistor may employ a low temperature polysilicon thin film transistor.
In a specific embodiment, the orthographic projection of the gate of the switching thin film transistor and the orthographic projection of the gate of the driving thin film transistor on the substrate are at least partially overlapped, so that the occupied area of the switching thin film transistor and the driving thin film transistor can be reduced, the aperture opening ratio of the display substrate is improved, and further a display product with high pixel density can be realized.
In the first embodiment of the present invention, as shown in fig. 2 and fig. 3, the switch thin film transistor adopts an oxide thin film transistor, the drive thin film transistor adopts a low temperature polysilicon thin film transistor, the switch thin film transistor includes an active layer 4, a source drain 6 and a gate 8, the source drain 6 of the switch thin film transistor is connected with the active layer 5 of the switch thin film transistor through a second via hole 7, and the gate 8 of the switch thin film transistor is located on one side of the active layer 5 of the switch thin film transistor, which is far away from the substrate 11; the driving thin film transistor comprises an active layer 1, a source drain electrode 2 and a grid electrode 3, wherein the source drain electrode 2 of the driving thin film transistor is connected with the active layer 1 of the driving thin film transistor through a first through hole 4. Orthographic projections of the gate electrode 8 and the gate electrode 3 on the substrate 11 overlap. Where 12 is a first buffer layer, 13 is a first gate insulating layer, 14 is a first interlayer insulating layer, 15 is a second buffer layer, 16 is a second gate insulating layer, 17 is a second interlayer insulating layer, and 18 is a planarization layer.
The grid 3 of drive thin film transistor is located oxide thin film transistor's active layer 5 orientation one side of substrate base plate 11, just active layer 5 is in orthographic projection on the substrate base plate 11 falls into drive thin film transistor's grid 3 is in the orthographic projection on the substrate base plate 11, grid 3 can shelter from active layer 5 like this, avoids external light to shine on active layer 5, avoids switch thin film transistor's threshold voltage drift, causes spot and bright spot harmfully, influences switch thin film transistor's performance.
Optionally, the source and the drain of the switching thin film transistor and the drain of the driving thin film transistor are arranged in the same layer and material. Therefore, the source electrode and the drain electrode of the switch thin film transistor and the drain electrode of the driving thin film transistor can be formed through the same composition process, the composition process times of the display substrate can be saved, and the production cost of the display substrate is reduced.
As shown in fig. 2, the gate electrode 8 of the switching thin film transistor and the gate electrode 3 of the driving thin film transistor may be electrically connected through a third via hole 10, so that the number of gate lines may be reduced, and the structure of the display substrate may be simplified.
The driving thin film transistor and the switching thin film transistor may be selectively turned on or off by applying a voltage to the gate electrode 8 and the gate electrode 3. Specifically, when the driving thin film transistor is a P-type thin film transistor and the switching thin film transistor is an oxide thin film transistor, signals input to the gate 3 and the gate 8 are as shown in fig. 4, and when the voltage of the signal is V1, the driving thin film transistor is turned on and the switching thin film transistor is turned off during D1; when the voltage of the signal is V2, the switching thin film transistor is turned on and the driving thin film transistor is turned off during the period D2. Specifically, V1 can be +15 to +30V, and V2 can be-30V to-5V.
When the driving thin film transistor is an N-type thin film transistor and the switching thin film transistor is an oxide thin film transistor, signals input to the gate 3 and the gate 8 are as shown in fig. 5, the signal input to the gate 8 of the switching thin film transistor is signal 1, the switching thin film transistor is turned on during D3 when the voltage of the signal 1 is V2, and the switching thin film transistor is turned off during D4 when the voltage of the signal 1 is V1; the signal input to the gate 3 of the driving thin film transistor is signal 2, the driving thin film transistor is turned on during D4 when the voltage of the signal 2 is V2, the driving thin film transistor is turned off during D3 when the voltage of the signal 2 is V1, and the driving thin film transistor and the switching thin film transistor can be controlled to be turned on by controlling the timing of signal 1 and signal 2, respectively. Specifically, V1 can be +15 to +30V, and V2 can be-30V to-5V.
In the second embodiment of the present invention, as shown in fig. 6 and 7, the switch thin film transistor is an oxide thin film transistor, the driving thin film transistor is a low temperature polysilicon thin film transistor, the switch thin film transistor includes an active layer 4, a source drain 6 and a gate 3, and the source drain 6 of the switch thin film transistor is connected to the active layer 5 of the switch thin film transistor through a second via hole 7; the driving thin film transistor comprises an active layer 1, a source drain electrode 2 and a grid electrode 3, wherein the source drain electrode 2 of the driving thin film transistor is connected with the active layer 1 of the driving thin film transistor through a first through hole 4. The gate 3 of the driving thin film transistor is multiplexed as the gate 3 of the switching thin film transistor, wherein 21 is a substrate, 22 is a buffer layer, 23 is a gate insulating layer, 24 is an interlayer insulating layer, and 25 is a planarization layer.
In this embodiment, the gate of the switching thin film transistor is multiplexed as the gate of the driving thin film transistor, so that the structure of the display substrate can be simplified, and the number of gate lines can be reduced.
When the switching thin film transistor is an oxide thin film transistor and the driving thin film transistor is a low-temperature polycrystalline silicon thin film transistor, the active layer 5 of the switching thin film transistor is located on one side of the gate 3, which is far away from the substrate base plate 21, and the active layer 1 of the driving thin film transistor is located on one side of the gate 3, which is far towards the substrate base plate. Therefore, the grid 3 can shield the active layer 5, so that external light is prevented from irradiating the active layer 5, and the threshold voltage drift of the switching thin film transistor is prevented from causing spots and bright spots to be bad and affecting the performance of the switching thin film transistor.
In this embodiment, the source and the drain of the switching thin film transistor and the source and the drain of the driving thin film transistor are made of the same material in the same layer. Therefore, the source electrode and the drain electrode of the switch thin film transistor and the source electrode and the drain electrode of the driving thin film transistor can be formed through the same composition process, the composition process times of the display substrate can be saved, and the production cost of the display substrate is reduced.
The driving thin film transistor and the switching thin film transistor may be selectively turned on or off by applying a voltage to the gate electrode 3. Specifically, when the driving thin film transistor is a P-type thin film transistor and the switching thin film transistor is an oxide thin film transistor, a signal input to the gate 3 is as shown in fig. 4, and when the voltage of the signal is V1, the driving thin film transistor is turned on and the switching thin film transistor is turned off during the period D1; when the voltage of the signal is V2, the switching thin film transistor is turned on and the driving thin film transistor is turned off during the period D2. Specifically, V1 can be +15 to +30V, and V2 can be-30V to-5V.
When the driving thin film transistor is an N-type thin film transistor and the switching thin film transistor is an oxide thin film transistor, a signal input to the gate 3 is a signal 1 as shown in fig. 5, the switching thin film transistor is turned on during a period D3 when a voltage of the signal 1 is V2, and the switching thin film transistor is turned off during a period D4 when a voltage of the signal 1 is V1; the signal input to the gate 3 of the driving thin film transistor is signal 2, the driving thin film transistor is turned on during D4 when the voltage of the signal 2 is V2, the driving thin film transistor is turned off during D3 when the voltage of the signal 2 is V1, and the driving thin film transistor and the switching thin film transistor can be controlled to be turned on by controlling the timing of signal 1 and signal 2, respectively. Specifically, V1 can be +15 to +30V, and V2 can be-30V to-5V.
The embodiment of the utility model also provides a display device, include as above display substrate.
The display device may be: the display device comprises a television, a display, a digital photo frame, a mobile phone, a tablet personal computer and any other product or component with a display function, wherein the display device further comprises a flexible circuit board, a printed circuit board and a back plate.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by those of ordinary skill in the art to which the invention belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
The foregoing is a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A display substrate is characterized by comprising a switching thin film transistor and a driving thin film transistor which are positioned on a substrate, wherein the orthographic projection of the switching thin film transistor on the substrate is at least partially overlapped with the orthographic projection of the driving thin film transistor on the substrate.
2. The display substrate according to claim 1, wherein the switching thin film transistor is an oxide thin film transistor, and the driving thin film transistor is a low temperature polysilicon thin film transistor.
3. The display substrate according to claim 1 or 2, wherein the gate electrode of the switching thin film transistor and the gate electrode of the driving thin film transistor at least partially overlap in an orthographic projection on the substrate.
4. The display substrate according to claim 3, wherein when the switching thin film transistor is an oxide thin film transistor and the driving thin film transistor is a low temperature polysilicon thin film transistor, the gate of the driving thin film transistor is located on a side of the active layer of the oxide thin film transistor facing the substrate, and an orthographic projection of the active layer on the substrate falls within an orthographic projection of the gate of the driving thin film transistor on the substrate.
5. The display substrate of claim 3, wherein the source and drain of the switching thin film transistor and the drain of the driving thin film transistor are disposed in the same layer and material as each other.
6. The display substrate according to claim 3, wherein a gate of the switching thin film transistor is electrically connected to a gate of the driving thin film transistor.
7. The display substrate according to claim 1 or 2, wherein the gate of the switching thin film transistor is multiplexed as the gate of the driving thin film transistor.
8. The display substrate according to claim 7, wherein when the switching thin film transistor is an oxide thin film transistor and the driving thin film transistor is a low temperature polysilicon thin film transistor, an active layer of the switching thin film transistor is located on a side of the gate electrode away from the substrate, and an active layer of the driving thin film transistor is located on a side of the gate electrode facing the substrate.
9. The display substrate of claim 7, wherein the source and the drain of the switching thin film transistor are disposed in the same layer of material as the source and the drain of the driving thin film transistor.
10. A display device comprising the display substrate according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922325947.0U CN210668376U (en) | 2019-12-20 | 2019-12-20 | Display substrate and display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922325947.0U CN210668376U (en) | 2019-12-20 | 2019-12-20 | Display substrate and display device |
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| CN210668376U true CN210668376U (en) | 2020-06-02 |
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| CN201922325947.0U Active CN210668376U (en) | 2019-12-20 | 2019-12-20 | Display substrate and display device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113889040A (en) * | 2021-11-22 | 2022-01-04 | 京东方科技集团股份有限公司 | Grid driving circuit and display device |
| CN114326235A (en) * | 2022-01-06 | 2022-04-12 | Tcl华星光电技术有限公司 | Array substrate and liquid crystal display panel |
-
2019
- 2019-12-20 CN CN201922325947.0U patent/CN210668376U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113889040A (en) * | 2021-11-22 | 2022-01-04 | 京东方科技集团股份有限公司 | Grid driving circuit and display device |
| CN114326235A (en) * | 2022-01-06 | 2022-04-12 | Tcl华星光电技术有限公司 | Array substrate and liquid crystal display panel |
| CN114326235B (en) * | 2022-01-06 | 2023-12-12 | Tcl华星光电技术有限公司 | Array substrate and liquid crystal display panel |
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