CN220172132U - Silicon carbide Schottky diode chip, circuit board assembly and electronic equipment - Google Patents
Silicon carbide Schottky diode chip, circuit board assembly and electronic equipment Download PDFInfo
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- CN220172132U CN220172132U CN202321027252.4U CN202321027252U CN220172132U CN 220172132 U CN220172132 U CN 220172132U CN 202321027252 U CN202321027252 U CN 202321027252U CN 220172132 U CN220172132 U CN 220172132U
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 91
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 229910052751 metal Inorganic materials 0.000 claims abstract description 55
- 239000002184 metal Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000011159 matrix material Substances 0.000 claims description 14
- 238000000926 separation method Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 238000002955 isolation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000006004 Quartz sand Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000011335 coal coke Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002006 petroleum coke Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
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Abstract
The utility model provides a silicon carbide Schottky diode chip, a circuit board assembly and electronic equipment, wherein the silicon carbide Schottky diode chip comprises a plurality of Schottky diode units; for each of the schottky diode cells, the schottky diode cell includes: the device comprises a cathode metal layer, an N-type substrate layer, an N-type epitaxial layer, an anode metal layer and a terminal structure. By forming a plurality of Schottky diode units with equivalent overcurrent capability, the Schottky diode units with failure points do not influence other Schottky diode units, and the possibility that the silicon carbide Schottky diode chips completely fail due to the failure points is reduced.
Description
Technical Field
The utility model relates to the technical field of semiconductors, in particular to a silicon carbide Schottky diode chip, a circuit board assembly and electronic equipment.
Background
Currently, silicon carbide electronic devices are widely used due to their excellent electrical properties, and as electrical equipment is rapidly developed, the silicon carbide electronic device industry is also moving along with development trend, wherein the silicon carbide schottky diode chip is the most widely used.
For silicon carbide schottky diode chips with high current properties, the chip area is large relative to other common silicon carbide schottky diode chips. However, all silicon carbide schottky diode chips are produced integrally, and when a failure point exists in the silicon carbide schottky diode chip with a large chip area, the whole silicon carbide schottky diode chip can be failed and cannot be used.
Disclosure of Invention
The embodiment of the utility model mainly aims to provide a silicon carbide Schottky diode chip, a circuit board assembly and electronic equipment, and aims to enable the silicon carbide Schottky diode chip to still work in a matched current environment under the condition that a failure point exists.
To achieve the above object, a first aspect of an embodiment of the present utility model proposes a silicon carbide schottky diode chip including a plurality of schottky diode cells;
for each of the schottky diode cells, the schottky diode cell includes: the device comprises a cathode metal layer, an N-type substrate layer, an N-type epitaxial layer, an anode metal layer and a terminal structure.
In some possible embodiments of the present utility model, for each of the schottky diode cells, the schottky diode cell includes a base cell; the plurality of schottky diode cells includes:
the plurality of central Schottky diode units are contacted with each other to form a central matrix;
the side Schottky diode units are contacted with each other to form a plurality of side matrixes;
a plurality of corner schottky diode cells, each of the corner schottky diode cells being in contact with two of all of the side matrices to form a first enclosure, the first enclosure contact surrounding the center matrix.
In some possible embodiments of the present utility model, the termination structure forms a plurality of floating field loops on the N-type epitaxial layer for each of the schottky diode cells.
In some possible embodiments of the present utility model, for each of the schottky diode cells, the termination structure forms a plurality of field plate structures on an N-type epitaxial layer.
In some possible embodiments of the present utility model, the distances between the base cells of all the center schottky diode cells are equal.
In some possible embodiments of the present utility model, the base cells of all the center schottky diode cells are spaced apart by a first distance, and the base cells of all the side schottky diode cells are spaced apart by the first distance;
the base unit of each of the side schottky diode units is spaced from an edge of the silicon carbide schottky diode chip by a second distance, the second distance being greater than the first distance.
In some possible embodiments of the utility model, for each of the corner schottky diode cells, the base cell of the corner schottky diode cell is spaced from the base cell of a side contact schottky diode cell by the first distance and from an edge of the silicon carbide schottky diode chip by the second distance, wherein the side contact schottky diode cell is the side schottky diode cell in contact with the corner schottky diode cell in the side matrix in contact with the corner schottky diode cell.
In some possible embodiments of the present utility model, for each of the center schottky diode cells in contact with the side matrix, the shortest separation distance of the base cell of the center schottky diode cell from the base cells of all of the side schottky diode cells is the first distance.
To achieve the above object, a second aspect of the embodiments of the present utility model provides a circuit board assembly, which includes the silicon carbide schottky diode chip according to the first aspect.
To achieve the above object, a third aspect of the embodiments of the present utility model proposes an electronic device including the circuit board assembly according to the second aspect.
The utility model provides a silicon carbide Schottky diode chip, a circuit board assembly and electronic equipment, wherein the silicon carbide Schottky diode chip comprises a plurality of Schottky diode units; for each of the schottky diode cells, the schottky diode cell includes: a cathode metal layer; the semiconductor device comprises an N-type substrate layer, an N-type epitaxial layer, an anode metal layer and a terminal structure. Through forming a plurality of schottky diode units for every schottky diode unit forms equivalent overcurrent ability, has the failure point in schottky diode unit, and other schottky diode units still normally shunt, make carborundum schottky diode chip can still work in assorted current environment, reduce carborundum schottky diode chip and because the possibility of failure point inefficacy completely.
Drawings
FIG. 1 is a top view of a silicon carbide Schottky diode chip provided in an embodiment of the present utility model;
FIG. 2 is a schematic diagram of a cell structure of the Schottky diode unit shown in FIG. 1;
FIG. 3 is a schematic diagram of a cell structure including a junction structure in FIG. 2;
fig. 4 is a schematic diagram of another embodiment of the termination structure 15 of fig. 2.
Reference numerals:
a cell 20, a base unit 21, a cell sub-portion 22, a center schottky diode unit 110, a center matrix 111, a side schottky diode unit 120, a side matrix 121, a corner schottky diode unit 130;
a cathode metal layer 11;
an N-type substrate layer 12;
an N-type epitaxial layer 13 and a spacer 131;
an anode metal layer 14;
termination structure 15, floating field ring 151.
Detailed Description
The present utility model will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present utility model more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the utility model.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this utility model belongs. The terminology used herein is for the purpose of describing embodiments of the utility model only and is not intended to be limiting of the utility model.
First, several nouns involved in the present utility model are parsed:
silicon carbide: the inorganic matter is SiC, is prepared by smelting quartz sand, petroleum coke (or coal coke), wood dust and other raw materials through a resistance furnace at high temperature, has high thermal conductivity, high breakdown electric field strength and high maximum current density, is a semiconductor with better performance, wherein the 4H-type SiC (4H-SiC) with a hexagonal structure has the advantages of high critical breakdown electric field and high electron mobility, is an excellent semiconductor material for manufacturing high-pressure, high-temperature and radiation-resistant power semiconductor devices, and is a third-generation semiconductor material with the best comprehensive performance, highest commercialization degree and the most mature technology at present.
Schottky diodes, also known as schottky barrier diodes (Schottky Barrier Diode, SBD), are semiconductor diodes with low forward voltage drop and very fast switching action, in which a semiconductor-metal junction is formed between the semiconductor and the metal, thereby forming a schottky barrier. Such a schottky barrier reduces forward voltage drop and allows the diode to have very fast switching capability.
Schottky contact: when the metal and the semiconductor material are contacted, the energy band of the semiconductor is bent at the interface to form a Schottky barrier, and a region with rectifying effect is formed on the metal-semiconductor boundary.
Currently, silicon carbide electronic devices are widely used due to their excellent electrical properties, and as electrical equipment is rapidly developed, the silicon carbide electronic device industry is also moving along with development trend, wherein the silicon carbide schottky diode chip is the most widely used.
For silicon carbide schottky diode chips with high current properties, the chip area is large relative to other common silicon carbide schottky diode chips. However, all silicon carbide schottky diode chips are produced integrally, and when a failure point exists in the silicon carbide schottky diode chip with a large chip area, the whole silicon carbide schottky diode chip can be failed and cannot be used.
Based on the above, the embodiment of the utility model provides a silicon carbide Schottky diode chip, a circuit board assembly and electronic equipment, which aim to enable the silicon carbide Schottky diode chip to still work in a matched current environment under the condition that a failure point exists.
The silicon carbide schottky diode chip, the circuit board assembly and the electronic equipment provided by the embodiment of the utility model are specifically described through the following embodiments, and the silicon carbide schottky diode chip in the embodiment of the utility model is firstly described.
Referring to fig. 1, fig. 1 is a schematic diagram of a schottky diode unit according to an embodiment of the utility model. In an embodiment of the present utility model, a silicon carbide schottky diode die includes a plurality of schottky diode cells, each schottky diode cell including, but not limited to, a cathode metal layer, an N-type substrate layer, an N-type epitaxial layer, an anode metal layer, and a termination structure. Each schottky diode cell forms a common silicon carbide schottky diode structure.
It should be understood that the structure of the schottky diode cell herein is various and that one skilled in the art can determine the specific structure of the silicon carbide diode cell based on the diode chip structure of the prior art.
For each schottky diode cell, each schottky diode cell includes a base cell 21, and the plurality of schottky diode cells includes, but is not limited to, three parts: a center schottky diode cell 110, side schottky diode cells 120, and corner schottky diode cells 130.
The plurality of central schottky diode units 110 is provided, and the central schottky diode units 110 are contacted with each other to form a central matrix 111.
The side schottky diode units 120 are plural, and the side schottky diode units 120 are in contact with each other to form a plurality of side matrixes 121.
The corner schottky diode cells 130 are plural, and each corner schottky diode cell 130 contacts two of all of the side matrices 121 to form a first enclosure, the first enclosure contacting the surrounding center matrix 111.
In some possible embodiments of the present utility model, the distance between the base unit 21 of each center schottky diode unit 110 and the base units 21 of other center schottky diode units 110 is equal for all center schottky diode units 110.
In some possible embodiments of the present utility model, the base unit 21 of each center schottky diode unit 110 is spaced apart from the base units 21 of other center schottky diode units 110 by a first distance. For each side schottky diode cell 120, the distance between the base cell 21 of each side schottky diode cell 120 and the base cells 21 of the other side schottky diode cells 120 is equal, and is the first distance. The base cells 21 in each of the side schottky diode cells 120 are spaced a second distance from the edge of the silicon carbide schottky diode chip, the second distance being greater than the first distance.
In the embodiment of the utility model, the distances between the base units 21 of the central schottky diode unit 110 and the base units 21 of all the side schottky diode units 120 are set to be equal to the distances between the base units 21 of each central schottky diode unit 110, so that the overcurrent capacity of the side schottky diode unit 120 and the central schottky diode unit 110 is equal, and the damage to the side schottky diode unit 120 caused by uneven overcurrent among the schottky diode units is prevented.
In some possible embodiments of the present utility model, for each corner schottky diode cell 130, the base cell 21 of the corner schottky diode cell 130 is spaced a first distance from the base cell 21 of the side contact schottky diode cell.
It should be understood that the side contact schottky diode cell herein refers to the side schottky diode cell 120 that is in contact with the corner schottky diode cell 130 in the side matrix 121 that is in contact with the corner schottky diode cell 130.
According to the embodiment of the utility model, the distances between the base units 21 of the Schottky diode units are equal, the distances between the base units 21 of the corner Schottky diode unit 130 and the side Schottky diode unit 120 from the edge of the silicon carbide Schottky diode chip are increased, the equality of the Schottky diode units is ensured, the equivalent overcurrent capacity is realized, and the silicon carbide Schottky diode chip current still works under the condition that the inside is not damaged completely.
In some possible embodiments of the present utility model, for each center schottky diode cell 110 in contact with the side matrix 121, the shortest separation distance of the base cell 21 of the center schottky diode cell 110 from the base cells 21 of all the side schottky diode cells 120 is the first distance.
According to the silicon carbide Schottky diode chip provided by the utility model, the plurality of Schottky diode units are formed, so that each Schottky diode unit has equivalent overcurrent capacity, when a failure point exists in the Schottky diode unit, other Schottky diode units still normally shunt, the silicon carbide Schottky diode chip can still work in a matched current environment, and the possibility that the silicon carbide Schottky diode chip is completely failed due to the failure point is reduced; and because of this structure, there is the failure point in the silicon carbide schottky diode chip in the production process, also can normally work in assorted current environment, reduced the production extravagant.
Referring to fig. 2, fig. 2 is a schematic diagram of a cell structure of the schottky diode unit in fig. 1. In some possible embodiments of the present utility model, one base unit 21 includes a plurality of cells 20, each cell 20 including a cell sub-portion 22. The specific structure of a cell of a schottky diode unit is illustrated below.
The cathode metal layer 11 is located at the bottom of the silicon carbide schottky diode chip and is used for leading out the packaging electrode contacted with an external circuit.
It should be understood that the materials in the cathode metal layer 11 herein are various, and exemplary, such as elemental titanium, aluminum, copper, etc., and further such as titanium nitride, etc., which is a metal compound, those skilled in the art can select a suitable material as the cathode metal layer 11 according to the current property requirements of the silicon carbide schottky diode chip.
An N-type substrate layer 12 is disposed on the cathode metal layer 11 to provide electrical performance for the silicon carbide schottky diode chip and to provide a supporting base for the other layers of the silicon carbide schottky diode chip.
An N-type epitaxial layer 13 is disposed over the N-type substrate layer 12 for adjusting the electrical performance of the silicon carbide schottky diode chip.
It should be understood that the ion concentration in the N-type epitaxial layer 13 and the thickness of the N-type epitaxial layer 13 itself determine the current and voltage of the device, and those skilled in the art can determine the thickness of the N-type epitaxial layer 13 and the specific doping concentration of the N-type epitaxial layer according to practical situations, which is not limited in the present utility model.
The anode metal layer 14 is provided in plurality on the upper surface of the N-type epitaxial layer 13, and for each anode metal layer 14, the anode metal layer 14 is in contact with the N-type epitaxial layer 13 to form schottky contact, and the anode metal layer 14 and the N-type epitaxial layer 13 form schottky barriers due to the schottky contact, that is, the cathode metal layer 11, the N-type substrate layer 12, the N-type epitaxial layer 13, and the anode metal layer 14 form one cell sub-portion 22. When packaging the silicon carbide diode chip, a package electrode is led out in the anode metal layer 14 to be in contact with an external circuit.
It should be appreciated that the specific materials of the anode metal layer 14 herein are various, and exemplary, such as nickel, platinum, etc., and those skilled in the art may select suitable materials as the anode metal layer 14 according to the actual situation, and the present utility model is not limited thereto.
Each cell sub-portion 22 has a semiconductor-metal junction, and the trapped electrons in the semiconductor diffuse into the metal, so that a depletion region and a built-in electric field are formed in the semiconductor, and the cell sub-portion 22 can be regarded as a small schottky diode, and when conducting in the forward direction, a large number of free electrons are generated in the N-type semiconductor and the metal, so that the depletion region is reduced, and the built-in electric field of the depletion region is reduced. The diode structure represented by one cell 20 is illustrated, and when a forward voltage is applied to the diode structure, the depletion region becomes smaller, allowing the internal electrons to more easily pass, and when the applied voltage is greater than the on voltage, the depletion region becomes narrower, allowing the diode structure to turn on, resulting in a current.
The terminal structure 15 is disposed on a surface of a spacer 131 formed by the cell sub-portion 22 on the N-type epitaxial layer 15, and a plurality of cells 20 are formed corresponding to the plurality of cell sub-portions 22. Specifically, for one cell sub-portion 22, the terminal structure 15 surrounds the cell sub-portion 22 to form a cell 20.
In some possible embodiments of the present utility model, the terminal structure 15 is disposed on the upper surface of the isolation portion 131 to form a plurality of field plate structures, where the plurality of field plate structures are in one-to-one correspondence with the plurality of cell sub-portions 22, and each field plate structure surrounds the corresponding cell sub-portion 22 and contacts the anode metal layer 14 in the cell sub-portion 22.
Since the termination structure 15 of the side schottky diode unit 120 is partially occupied by the anode metal layer 14, the termination structure formed by the termination structure 15 needs to be outwardly enlarged in size to achieve equivalent overcurrent capability as the center schottky diode unit 110. The terminal structure is further expanded, and the width from the first distance to the second distance is expanded, so that overcurrent of the side Schottky diode unit 120 and overcurrent balance of the central Schottky diode unit 110 are ensured, and the damage of the side Schottky diode unit 120 caused by uneven overcurrent among the Schottky diode units is prevented.
The terminal structure 15 of the corner schottky diode unit 130 is partially occupied by the anode metal layer 14, and the terminal structure formed by the terminal structure 15 is enlarged outwards, so that the corner schottky diode unit 130 maintains the equivalent overcurrent capability as the side schottky diode unit 120, and the side schottky diode unit 120 is prevented from being damaged due to uneven overcurrent among the schottky diode units.
Referring to fig. 3, fig. 3 is a schematic diagram of a cell structure including a junction structure in fig. 2. Taking the field plate structure as an example, since the anode metal layer 14 is disposed on the N-type epitaxial layer 13, not only the bottom of the anode metal layer is in contact with the N-type epitaxial layer 13, the sidewall of the anode metal layer 14 is also in contact with the N-type epitaxial layer 13, and the schottky contact forms a depletion region with a three-dimensional surrounding shape, as shown by line a in fig. 3. When energized, the depletion region shrinks, which for embodiments of the present utility model, manifests itself as an inward shrinkage of the semiconductor-metal junction, which now appears to be spherical, as shown by the B-line in fig. 3, for which the internal electric field lines are so dense that the electric field therein increases abnormally, causing breakdown of the cellular sub-portion 22 at that location. When the terminal structure 15 is provided, junction electrons of the semiconductor-metal junction are depleted under the action of the terminal structure 15, and the depletion region is enlarged, as shown by a line C in fig. 3, so that the magnitude of the built-in electric field is reduced, and the breakdown resistance of the cell sub-portion 22 is improved.
In the embodiment of the present utility model, since the schottky diode cells are included in the silicon carbide schottky diode chip, the same termination structure 15 and the same semiconductor-metal junction structure make the overcurrent capability of each base cell 21 the same. Each schottky diode cell can split the current through the silicon carbide schottky diode chip into small currents. For example, schottky diode cells are formed in a silicon carbide schottky diode chip, and the current through the silicon carbide schottky diode chip is YA, and the magnitude of the current through each schottky diode cell is XA which is Y minutes.
And under the effect of terminal structure and isolation part, each schottky diode unit keeps apart each other, when one of them schottky diode unit goes wrong and can't realize the function of schottky diode, the overcurrent of other schottky diode units is not influenced, the silicon carbide schottky diode chip overflows the ability and steps down, still continue to work in corresponding current environment, for example, establish the breakdown current of one schottky diode unit as QA, form X schottky diode units in the silicon carbide schottky diode chip, then the overflow ability of silicon carbide schottky diode chip reaches XQA, when one schottky diode unit damages, the overflow ability of silicon carbide schottky diode chip is (X-1) QA.
In some possible embodiments of the present utility model, the field plate structure includes an oxide dielectric layer and a field plate metal layer (not shown in both figures), which is in contact with the anode metal layer 14.
It should be understood that the manner of forming the field plate metal layer is various, for example, the anode metal layer 14 extends above the oxidation dielectric layer to form the field plate metal layer, and further, for example, a separate field plate metal layer is disposed on the oxidation dielectric layer and is in contact with the anode metal layer 14, etc., and those skilled in the art can, depending on the actual situation, set forth the field plate metal layer and the oxidation dielectric layer structure, which is not limited to this embodiment.
The expansion of the semiconductor-metal junction surface is achieved by the field plate structure consuming electrons near the semiconductor metal junction to widen the depletion region size, improving the breakdown resistance of the base unit 21.
Referring to fig. 4, fig. 4 is a schematic diagram of another embodiment of the terminal structure 15 in fig. 2. In some possible embodiments of the present utility model, the terminal structure 15 is embedded in the upper surface of the isolation portion 131 such that the upper surface of the isolation portion 131 forms a plurality of floating field ring portions 151 surrounding the cell sub-portions 22, each floating field ring portion 151 surrounding a corresponding cell sub-portion 22 to form a cell 20. The floating field rings 151 contact the N-type epitaxial layer 13, forming diode junctions, the junction surfaces of which also form depletion regions. For one unit cell 20, each floating field ring portion 151 is not equidistantly distributed, and depletion regions formed by each diode junction are connected with each other, so that the depletion regions are enlarged, thereby enlarging the semiconductor-metal junction surface and improving the breakdown resistance of the base unit cell 21.
It should be understood that one cell sub-portion 22 may correspond to a plurality of floating field ring portions 151, i.e., in one cell 20, one cell sub-portion 22 is surrounded by a plurality of corresponding floating field ring portions 151.
It should be understood that the specific materials of the floating field ring portions 151 are various, and the specific spacing distance between each floating field ring is various, and may be the same as the material of the anode metal layer 14 or may be different from the material of the anode metal layer 14, and those skilled in the art may determine the specific materials of the floating field rings and the specific spacing distance between each floating field ring portion 151 according to actual situations, which is not limited by the present utility model.
The circuit board assembly comprises the silicon carbide Schottky diode chip provided by the first aspect of the embodiment of the utility model, wherein the silicon carbide Schottky diode chip enables each Schottky diode unit to form equivalent overcurrent capacity by forming a plurality of Schottky diode units, when a failure point exists in the Schottky diode unit, other Schottky diode units still normally shunt, so that the silicon carbide Schottky diode chip can still work in a matched current environment, and the possibility of complete failure of the silicon carbide Schottky diode chip due to the failure point is reduced; and because of this structure, there is the failure point in the silicon carbide schottky diode chip in the production process, also can normally work in assorted current environment, reduced the production extravagant.
According to the electronic equipment provided by the third aspect of the embodiment of the utility model, the electronic equipment comprises the circuit board assembly provided by the second aspect of the embodiment of the utility model, and the circuit board assembly comprises the silicon carbide Schottky diode chip provided by the first aspect of the embodiment of the utility model, and the silicon carbide Schottky diode chip enables each Schottky diode unit to form equivalent overcurrent capacity by forming a plurality of Schottky diode units, so that when a failure point exists in the Schottky diode unit, other Schottky diode units still normally shunt, the silicon carbide Schottky diode chip can still work in a matched current environment, the possibility that the silicon carbide Schottky diode chip is completely failed due to the failure point is reduced, and the stability of the electronic equipment is maintained.
The utility model provides a silicon carbide Schottky diode chip, a circuit board assembly and electronic equipment, wherein the silicon carbide Schottky diode chip comprises a plurality of Schottky diode units; for each of the schottky diode cells, the schottky diode cell includes: the device comprises a cathode metal layer, an N-type substrate layer, an N-type epitaxial layer, an anode metal layer and a terminal structure. By forming a plurality of Schottky diode units, each Schottky diode unit has equivalent overcurrent capacity, when a failure point exists in the Schottky diode unit, other Schottky diode units still normally shunt, so that a silicon carbide Schottky diode chip can still work in a matched current environment, and the possibility of complete failure of the silicon carbide Schottky diode chip due to the failure point is reduced; and because of this structure, there is the failure point in the silicon carbide schottky diode chip in the production process, also can normally work in assorted current environment, reduced the production extravagant.
The embodiments described in the embodiments of the present utility model are for more clearly describing the technical solutions of the embodiments of the present utility model, and do not constitute a limitation on the technical solutions provided by the embodiments of the present utility model, and those skilled in the art can know that, with the evolution of technology and the appearance of new application scenarios, the technical solutions provided by the embodiments of the present utility model are equally applicable to similar technical problems.
The terms "first," "second," "third," "fourth," and the like in the description of the utility model and in the above figures, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the utility model described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
It should be understood that in the present utility model, "at least one (item)" means one or more, and "a plurality" means two or more. "and/or" for describing the association relationship of the association object, the representation may have three relationships, for example, "a and/or B" may represent: only a, only B and both a and B are present, wherein a, B may be singular or plural. The character "/" generally indicates that the context-dependent object is an "or" relationship. "at least one of" or the like means any combination of these items, including any combination of single item(s) or plural items(s). For example, at least one (one) of a, b or c may represent: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", wherein a, b, c may be single or plural.
The embodiments described in the embodiments of the present utility model are for more clearly describing the technical solutions of the embodiments of the present utility model, and do not constitute a limitation on the technical solutions provided by the embodiments of the present utility model, and those skilled in the art can know that, with the evolution of technology and the appearance of new application scenarios, the technical solutions provided by the embodiments of the present utility model are equally applicable to similar technical problems.
It will be appreciated by persons skilled in the art that the embodiments of the utility model are not limited by the illustrations, and that more or fewer steps than those shown may be included, or certain steps may be combined, or different steps may be included.
Claims (10)
1. A silicon carbide schottky diode chip, wherein the silicon carbide schottky diode chip comprises a plurality of schottky diode cells;
for each of the schottky diode cells, the schottky diode cell includes: the device comprises a cathode metal layer, an N-type substrate layer, an N-type epitaxial layer, an anode metal layer and a terminal structure.
2. The silicon carbide schottky diode chip of claim 1 wherein for each of the schottky diode cells, the schottky diode cell comprises a base cell; the plurality of schottky diode cells includes:
the plurality of central Schottky diode units are contacted with each other to form a central matrix;
the side Schottky diode units are contacted with each other to form a plurality of side matrixes;
a plurality of corner schottky diode cells, each of the corner schottky diode cells being in contact with two of all of the side matrices to form a first enclosure, the first enclosure contact surrounding the center matrix.
3. The silicon carbide schottky diode chip of claim 1 wherein for each of the schottky diode cells, the termination structure forms a plurality of floating field rings on an N-type epitaxial layer.
4. The silicon carbide schottky diode chip of claim 1 wherein for each of the schottky diode cells, the termination structure forms a plurality of field plate structures on an N-type epitaxial layer.
5. The silicon carbide schottky diode chip of claim 2 wherein the distances between the base cells of all of the center schottky diode cells are equal.
6. The silicon carbide schottky diode chip of claim 5, wherein the base cells of all the center schottky diode cells are spaced apart by a first distance, and the base cells of all the side schottky diode cells are spaced apart by the first distance;
the base unit of each of the side schottky diode units is spaced from an edge of the silicon carbide schottky diode chip by a second distance, the second distance being greater than the first distance.
7. The silicon carbide schottky diode chip of claim 6, wherein for each of the corner schottky diode cells, the base cell of the corner schottky diode cell is spaced from the base cell of a side contact schottky diode cell by the first distance and from an edge of the silicon carbide schottky diode chip by the second distance, wherein the side contact schottky diode cell is the side schottky diode cell in contact with the corner schottky diode cell in the side matrix in contact with the corner schottky diode cell.
8. The silicon carbide schottky diode chip of claim 7, wherein for each of the center schottky diode cells in contact with the side matrix, the shortest separation distance of the base cell of the center schottky diode cell from the base cells of all of the side schottky diode cells is the first distance.
9. A circuit board assembly comprising the silicon carbide schottky diode chip of any of claims 1-8.
10. An electronic device comprising the circuit board assembly of claim 9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321027252.4U CN220172132U (en) | 2023-04-28 | 2023-04-28 | Silicon carbide Schottky diode chip, circuit board assembly and electronic equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202321027252.4U CN220172132U (en) | 2023-04-28 | 2023-04-28 | Silicon carbide Schottky diode chip, circuit board assembly and electronic equipment |
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| CN220172132U true CN220172132U (en) | 2023-12-12 |
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| CN202321027252.4U Active CN220172132U (en) | 2023-04-28 | 2023-04-28 | Silicon carbide Schottky diode chip, circuit board assembly and electronic equipment |
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| CN (1) | CN220172132U (en) |
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