CN220165840U - Inner and outer ring feeding and partial control structure of polysilicon reduction furnace - Google Patents
Inner and outer ring feeding and partial control structure of polysilicon reduction furnace Download PDFInfo
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- CN220165840U CN220165840U CN202321337392.1U CN202321337392U CN220165840U CN 220165840 U CN220165840 U CN 220165840U CN 202321337392 U CN202321337392 U CN 202321337392U CN 220165840 U CN220165840 U CN 220165840U
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- 230000009467 reduction Effects 0.000 title claims abstract description 64
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 20
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 13
- 239000007789 gas Substances 0.000 claims abstract description 89
- 239000001257 hydrogen Substances 0.000 claims abstract description 84
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 84
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 83
- 230000001105 regulatory effect Effects 0.000 claims description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 7
- 230000003068 static effect Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000005192 partition Methods 0.000 abstract 1
- 238000006722 reduction reaction Methods 0.000 description 47
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 2
- 241000482268 Zea mays subsp. mays Species 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- 241000353097 Molva molva Species 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
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- Silicon Compounds (AREA)
Abstract
The utility model relates to the technical field of polysilicon production, in particular to an inner and outer feeding split-control structure of a polysilicon reduction furnace, which comprises a reduction furnace, a cold hydrogen mixing pipeline and a hot hydrogen mixing pipeline; an inner ring feeding structure and an outer ring feeding structure are arranged in the reduction furnace; the cold hydrogen mixing pipeline is communicated with the inner ring feeding structure and is used for mixing normal-temperature hydrogen and TCS gas, and a first temperature adjusting device for adjusting the temperature of the mixed gas is arranged on the cold hydrogen mixing pipeline; the hot hydrogen mixing pipeline is communicated with the outer ring feeding structure and is used for mixing high-temperature hydrogen and TCS gas, and a second temperature adjusting device used for adjusting the temperature of the mixed gas is arranged on the hot hydrogen mixing pipeline. The utility model has the advantages that the feeding structure is divided into the inner ring feeding structure and the outer ring feeding structure, and the temperature adjusting device is arranged on the hot hydrogen mixing pipeline and the cold hydrogen mixing pipeline, so that the thermal field in the reduction furnace is controlled in a partition manner, the thermal field in the reduction furnace is more uniform, and the production quality of polysilicon is improved.
Description
Technical Field
The utility model relates to the technical field of polysilicon production, in particular to an inner and outer feeding split-control structure of a polysilicon reduction furnace.
Background
The modified siemens process is a common process for producing polycrystalline silicon, in which a polycrystalline silicon reduction process is a core process, a reduction furnace is a core device in the polycrystalline silicon reduction process, and in which a purified trichlorosilane gas (SiHCl 3 Hereinafter abbreviated as TCS) and hydrogen gas are introduced into a reduction furnace, and high purity TCS is converted into high purity polycrystalline silicon by a reduction reaction and Chemical Vapor Deposition (CVD).
In order to improve the production efficiency, the size of the reducing furnace is bigger and bigger, the thermal field inside the reducing furnace is difficult to control, the thermal field inside the reducing furnace is uneven, typically, when the size of the reducing furnace is bigger, the temperature of the center in the furnace is easy to be too high, the temperature difference between the center position and the edge position in the furnace is too large, the phenomena of sunny and sunny sides, popcorn and the like of a silicon rod are easy to be caused, and the reducing furnace with a single feeding structure cannot well avoid the defect at present.
Disclosure of Invention
The utility model aims to overcome the defects that the thermal field is not easy to control and the thermal field is not uniform in a reduction furnace in the prior art, and provides a multi-crystal silicon reduction furnace inner and outer feeding split-control structure.
The aim of the utility model is achieved by the following technical scheme: the polysilicon reducing furnace inner and outer ring feeding split-control structure comprises a reducing furnace, a cold hydrogen mixing pipeline and a hot hydrogen mixing pipeline; an inner ring feeding structure and an outer ring feeding structure are arranged in the reduction furnace; the outer ring feeding structure and the inner ring feeding structure comprise a plurality of annular feeding pipes which are concentrically arranged and communicated, a plurality of feeding nozzles are arranged on each annular feeding pipe at intervals, and the reduction furnace is uniformly fed through the annular feeding pipes; the cold hydrogen mixing pipeline is communicated with the inner ring feeding structure and is used for mixing normal-temperature hydrogen and TCS gas, and a first temperature adjusting device for adjusting the temperature of the mixed gas is arranged on the cold hydrogen mixing pipeline; the hot hydrogen mixing pipeline is communicated with the outer ring feeding structure and is used for mixing high-temperature hydrogen and TCS gas, and a second temperature adjusting device used for adjusting the temperature of the mixed gas is arranged on the hot hydrogen mixing pipeline.
The feeding structure is divided into an inner ring feeding structure and an outer ring feeding structure, so that the central position and the edge position in the reduction furnace are fed in a branched way, the inner ring feeding structure is communicated with a cold hydrogen mixing pipeline, the outer ring feeding structure is communicated with a hot hydrogen mixing pipeline, when the temperature of the central position in the reduction furnace is higher, the inner ring feeding structure is used for introducing mixed gas of normal-temperature hydrogen with lower temperature and TCS into the central position of the reduction furnace, and the outer ring feeding structure is used for introducing mixed gas of high-temperature hydrogen with higher temperature and TCS into the edge position in the reduction furnace, so that the central position and the edge position in the reduction furnace are prevented from generating larger temperature difference, and a thermal field is uniform; simultaneously, the temperature of the mixed gas entering the reduction furnace from the inner ring feeding structure and the outer ring feeding structure is precisely controlled by utilizing the first temperature adjusting device and the second temperature adjusting device, so that the thermal field in the reduction furnace is uniform.
In some embodiments, the first temperature regulating device and the second temperature regulating device each comprise a heat exchanger. The heat exchanger has simple structure and is convenient to control.
In some embodiments, the cold hydrogen mixing line includes a gas mixing device, a cold hydrogen inlet line and a first TCS inlet line each in communication with an inlet of the gas mixing device, and a first mixed gas line for communicating an outlet of the gas mixing device with an inner ring feed structure, the first temperature regulating device being disposed on the first mixed gas line. The cold hydrogen inlet pipe is filled with normal-temperature hydrogen, and is fully mixed with TCS gas through the gas mixing device to form mixed gas with lower temperature, and the mixed gas with lower temperature with determined temperature is obtained through the first temperature adjusting device.
In some embodiments, the hot hydrogen mixing line includes a gas mixing device, a hot hydrogen inlet line and a second TCS inlet line each in communication with an inlet of the gas mixing device, and a second mixed gas line for communicating an outlet of the gas mixing device with an outer ring feed structure, the second temperature regulating device being disposed on the second mixed gas line. And the hot hydrogen inlet pipe is filled with high-temperature hydrogen, the high-temperature hydrogen and TCS gas are fully mixed through the gas mixing device to form mixed gas with high temperature, and the mixed gas with high temperature is obtained after the mixed gas is regulated through the second temperature regulating device.
In some embodiments, the gas mixing device comprises a static mixer. The static mixer does not need a power supply, and is simple and convenient to use.
In some embodiments, the first TCS intake line and the second TCS intake line are connected to the same TCS source. The same TCS source is used, simplifying the device architecture.
In some embodiments, the first TCS intake line and the second TCS intake line are each provided with a flow meter. The flow meter may indicate the current TCS flow, facilitating control.
In some embodiments, the cold hydrogen inlet line, the hot hydrogen inlet line, the first TCS inlet line and the second TCS inlet line are each provided with a flow regulating valve. The flow regulating valve controls the gas flow in each pipeline for century.
In some embodiments, the front and rear positions of the flow regulating valves in the cold hydrogen inlet pipeline, the hot hydrogen inlet pipeline, the first TCS inlet pipeline and the second TCS inlet pipeline are respectively provided with an on-off valve, the flow regulating valves and the front and rear on-off valves thereof form a pipeline control section, and the on-off valves in the pipeline control section are convenient for controlling the on-off of the pipeline when the flow regulating valves fail in the reaction process.
In some embodiments, the pipeline control sections of the cold hydrogen inlet pipeline, the hot hydrogen inlet pipeline, the first TCS inlet pipeline and the second TCS inlet pipeline are all connected in parallel with a bypass, an on-off valve is arranged on the bypass, and the on-off valve on the bypass is convenient for realizing feeding through the bypass when the on-off valve on the pipeline control section is closed when the flow regulating valve fails to overhaul.
The utility model has the following advantages:
the feeding structure is divided into the outer ring feeding structure and the inner ring feeding structure, the central position and the edge position in the reducing furnace are divided into Cheng Jinliao, and the temperature of the inner ring feeding and the outer ring feeding is independently regulated, so that the central position and the edge position in the reducing furnace do not generate larger temperature difference, the overhigh temperature of the central position in the reducing furnace is avoided, the thermal field in the reducing furnace is uniform, the growth quality of polysilicon is improved, and the defects of a sunny surface of a silicon rod or popcorn and the like are avoided.
Drawings
FIG. 1 is a schematic diagram of the control structure of the inner and outer ring feeding split-control of a polysilicon reduction furnace according to the present utility model;
in the figure: 1. a reduction furnace; 11. an inner ring feeding structure; 12. an outer ring feeding structure; 21. a cold hydrogen inlet pipeline; 22. a first TCS intake line; 23. a first gas mixture line; 24. a first temperature regulating device; 31. a hot hydrogen inlet line; 32. a second TCS inlet line; 33. a second gas mixture line; 34. a second temperature regulating device; 4. a flow meter; 5. a gas mixing device; 6. a flow regulating valve; 7. leng Qing source; 8. a source of hot hydrogen; 9. a TCS source; 10. a bypass; 101. and an on-off valve.
Detailed Description
For the purpose of making the technical solution and advantages of the present utility model more apparent, the present utility model will be described in further detail with reference to the accompanying drawings and examples. It should be understood that the particular embodiments described herein are illustrative only and are not intended to limit the utility model, i.e., the embodiments described are merely some, but not all, of the embodiments of the utility model. The components of the embodiments of the present utility model generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
The present utility model will be further described with reference to the accompanying drawings, but the scope of the present utility model is not limited to the following.
As shown in fig. 1, the multi-crystal silicon reduction furnace inner and outer ring feeding split-control structure comprises a reduction furnace 1, a cold hydrogen mixing pipeline and a hot hydrogen mixing pipeline; an inner ring feeding structure 11 and an outer ring feeding structure 12 are arranged in the reduction furnace 1; the cold hydrogen mixing pipeline is communicated with the inner ring feeding structure 11 and is used for mixing normal-temperature hydrogen and TCS gas, and a first temperature adjusting device 24 for adjusting the temperature of the mixed gas is arranged on the cold hydrogen mixing pipeline; a hot hydrogen mixing pipeline is communicated with the outer ring feeding structure 12 and is used for mixing high-temperature hydrogen and TCS gas, and a second temperature adjusting device 34 for adjusting the temperature of the mixed gas is arranged on the hot hydrogen mixing pipeline.
In the present embodiment, the inner ring feeding structure 11 and the outer ring feeding structure 12 are both disposed at the bottom of the reduction furnace 1, and it is easy to understand that the outer ring feeding structure 12 is larger in size than the inner ring feeding structure 11, and the outer ring feeding structure 12 is located at the periphery of the inner ring feeding structure 11. The raw material entering the reduction furnace 1 from the inner ring feeding structure 11 is located at the center position in the reduction furnace 1, and the raw material entering the reduction furnace 1 from the outer ring feeding structure 12 is located at the edge position. In the operation of the large-sized reduction furnace 1, since the reduction furnace 1 itself dissipates heat, the temperature at the center position in the reduction furnace 1 is easily higher than the temperature at the edge position, resulting in uneven thermal field in the reduction furnace 1, and the larger the size of the reduction furnace 1, the more remarkable the unevenness of such thermal field. In the embodiment, the feeding steps of the center position and the edge position in the reduction furnace 1 are controlled by utilizing the inner ring feeding structure 11 and the outer ring feeding structure 12. The inner ring feeding structure 11 is communicated with a cold hydrogen mixing pipeline, the cold hydrogen mixing pipeline is used for mixing normal-temperature hydrogen with TCS gas to obtain mixed gas with lower initial temperature before the first temperature adjusting device 24, and the temperature of the mixed gas is adjusted by the first temperature adjusting device 24, so that the inner ring feeding structure 11 can input the mixed gas with lower temperature range to the central position in the reduction furnace 1; the outer ring feeding structure 12 is communicated with a hot hydrogen mixing pipeline, the hot hydrogen mixing pipeline obtains mixed gas with higher initial temperature before the second temperature adjusting device 34 by mixing high-temperature hydrogen with TCS gas, and the temperature of the mixed gas is adjusted by the second temperature adjusting device 34, so that the outer ring feeding structure 12 can input the mixed gas with higher temperature range to the inner edge position of the reduction furnace 1.
Mixed gases with different temperatures are input into the reduction furnace 1 through the inner ring feeding structure 11 and the outer ring feeding structure 12, and the first temperature adjusting device 24 and the second temperature adjusting device 34 are used for adjusting, so that the excessive high temperature of the center in the reduction furnace 1 is avoided, the excessive low temperature of the inner edge position of the reduction furnace 1 is avoided, the thermal field in the reduction furnace 1 is uniform, and the polysilicon generation quality is improved.
Preferably, the outer ring feeding structure 12 and the inner ring feeding structure 11 each comprise a plurality of annular feeding pipes which are concentrically arranged and communicated, and a plurality of feeding nozzles are arranged on each annular feeding pipe at intervals.
In this embodiment, the annular shape of any one of the annular feed tubes in the outer ring feed structure 12 is larger in diameter than any one of the annular feed tubes in the inner ring feed structure 11 to ensure that the outer ring feed structure 12 is located at the periphery of the inner ring feed structure 11. The feed nozzles are uniformly arranged on the annular feed pipe, and the number of the feed nozzles on the annular feed pipe with the larger diameter is more than that on the annular feed pipe with the smaller diameter. The plurality of feeding nozzles uniformly arranged on the annular feeding pipe uniformly feed the reducing furnace 1.
Preferably, the first temperature regulating device 24 and the second temperature regulating device 34 each comprise a heat exchanger. The heat exchanger has simple structure and is convenient for adjusting the temperature.
Preferably, the cold hydrogen mixing pipeline comprises a gas mixing device 5, a cold hydrogen inlet pipeline 21 and a first TCS inlet pipeline 22 which are respectively communicated with the gas inlet of the gas mixing device 5, and a first mixed gas pipeline 23 which is used for communicating the gas outlet of the gas mixing device 5 with the inner ring feeding structure 11, wherein the first temperature regulating device 24 is arranged on the first mixed gas pipeline 23. In this embodiment, the cold hydrogen inlet pipe 21 is connected to a cold hydrogen source 7 with a temperature of about 25 ℃, the first TCS inlet pipe 22 is connected to a TCS source 9 with a temperature of about 113 ℃, the mixed gas is mixed by the gas mixing device 5, the temperature of the mixed gas is about 67 ℃, and the mixed gas enters the reduction furnace 1 through the inner ring feeding structure 11 after being adjusted to 80-170 ℃ by the heat exchanger.
Preferably, the hot hydrogen mixing pipeline comprises a gas mixing device 5, a hot hydrogen inlet pipeline 31 and a second TCS inlet pipeline 32 which are respectively communicated with the gas inlet of the gas mixing device 5, and a second mixed gas pipeline 33 for communicating the gas outlet of the gas mixing device 5 with the outer ring feeding structure 12, wherein the second temperature regulating device 34 is arranged on the second mixed gas pipeline 33. In this embodiment, the hot hydrogen inlet pipe 31 is connected to the hot hydrogen source 8 with a temperature of about 126 ℃, the first TCS inlet pipe 22 is connected to the TCS source 9 with a temperature of about 113 ℃, the mixed gas is mixed by the gas mixing device 5, the temperature of the mixed gas is about 119 ℃, and the mixed gas enters the reduction furnace 1 through the outer ring feeding structure 12 after being adjusted to 120-170 ℃ by the heat exchanger.
Preferably, the gas mixing device 5 comprises a static mixer. The static mixer has simple structure, no moving mechanism and convenient use and maintenance.
Preferably, the first TCS intake line 22 and the second TCS intake line 32 are connected to the same TCS source 9. The use of a TCS source 9 simplifies the construction of the progenitor device.
Preferably, the first TCS intake line 22 and the second TCS intake line 32 are each provided with a flow meter 4. The flow meter 4 is capable of monitoring flow and facilitates control of the device.
Preferably, the cold hydrogen inlet pipe 21, the hot hydrogen inlet pipe 31, the first TCS inlet pipe 22 and the second TCS inlet pipe 32 are provided with flow regulating valves 6. The flow regulating valve 6 facilitates controlling the flow so as to meet the different flow requirements of the various reaction stages within the reduction furnace 1.
Preferably, the on-off valves 101 are respectively arranged at the front and rear positions of the flow regulating valve 6 on the cold hydrogen inlet pipeline 21, the hot hydrogen inlet pipeline 31, the first TCS inlet pipeline 22 and the second TCS inlet pipeline 32, the flow regulating valve 6 and the on-off valves 101 at the front and rear positions form a pipeline control section, and the on-off valves 101 are used for controlling the on-off of the pipeline when the flow regulating valve 6 fails so as to overhaul and replace the flow regulating valve 6.
Preferably, the pipeline control sections on the cold hydrogen inlet pipeline 21, the hot hydrogen inlet pipeline 31, the first TCS inlet pipeline 22 and the second TCS inlet pipeline 32 are all connected in parallel with a bypass 10, an on-off valve 101 is arranged on the bypass 10, the bypass 10 is used for overhauling and replacing a flow regulating valve 6 on the pipeline control section, and when the pipeline control section is closed, feeding is realized through the bypass 10. Specifically, the on-off valve 101 in the present embodiment is a ball valve.
In the early stage of the operation process of the reduction furnace 1, electrifying and heating the silicon rods in the reduction furnace 1, according to an ideal temperature time curve during the reaction, gradually increasing electrifying current to ensure that the temperature of the silicon rods is increased to meet the requirements, and simultaneously, by measuring the temperatures of the silicon rods at different positions in the reduction furnace 1, adjusting the feeding temperatures of the inner ring feeding structure 11 and the outer ring feeding structure 12 by utilizing the first temperature adjusting device 24 and the second temperature adjusting device 34, so that the thermal field is as uniform as possible in the process of heating the silicon rods in the reduction furnace 1; in the later stage, the temperature in the reduction furnace 1 reaches a stable value, the silicon rod grows to a set diameter, the current is stopped increasing or slowly increased, the air inlet temperature is controlled by the first temperature regulating device 24 and the second temperature regulating device 34, the temperature in the reduction furnace 1 is kept and the thermal field is uniform as much as possible, and the silicon rod at the center of the reduction furnace is prevented from being overhigh in temperature.
The above description is only a preferred embodiment of the present utility model, and is not intended to limit the present utility model in any way. Many possible variations and modifications of the disclosed technology can be made by anyone skilled in the art, or equivalent embodiments with equivalent variations can be made, without departing from the scope of the disclosed technology. Therefore, any modification, equivalent variation and modification of the above embodiments according to the technology of the present utility model fall within the protection scope of the present utility model.
Claims (10)
1. An inner and outer feeding split-control structure of a polysilicon reduction furnace, which is characterized by comprising:
the reduction furnace (1), the reduction furnace (1) is provided with an inner ring feeding structure (11) and an outer ring feeding structure (12); the outer ring feeding structure (12) and the inner ring feeding structure (11) comprise a plurality of annular feeding pipes which are concentrically arranged and communicated, and a plurality of feeding nozzles are arranged on each annular feeding pipe at intervals;
the cold hydrogen mixing pipeline is communicated with the annular feeding pipe of the inner ring feeding structure (11) and is used for mixing normal-temperature hydrogen and TCS gas, and a first temperature adjusting device (24) for adjusting the temperature of the mixed gas is arranged on the cold hydrogen mixing pipeline;
the hot hydrogen mixing pipeline is communicated with the annular feeding pipe of the outer ring feeding structure (12) and used for mixing high-temperature hydrogen and TCS gas, and a second temperature adjusting device (34) used for adjusting the temperature of the mixed gas is arranged on the hot hydrogen mixing pipeline.
2. The polycrystalline silicon reduction furnace inner and outer ring feed split control structure according to claim 1, characterized in that the first temperature adjusting device (24) and the second temperature adjusting device (34) each comprise a heat exchanger.
3. The multi-crystal silicon reduction furnace inner and outer ring feeding split control structure according to claim 1, wherein the cold hydrogen mixing pipeline comprises a gas mixing device (5), a cold hydrogen inlet pipeline (21) and a first TCS inlet pipeline (22) which are respectively communicated with an air inlet of the gas mixing device (5), and a first mixed gas pipeline (23) which is used for communicating an air outlet of the gas mixing device (5) with the inner ring feeding structure (11), wherein the first temperature regulating device (24) is arranged on the first mixed gas pipeline (23).
4. A polycrystalline silicon reduction furnace inner and outer race feed split control structure according to claim 3, characterized in that the hot hydrogen mixing pipe comprises a gas mixing device (5), a hot hydrogen inlet pipe (31) and a second TCS inlet pipe (32) respectively communicating with the gas inlet of the gas mixing device (5), and a second mixed gas pipe (33) for communicating the gas outlet of the gas mixing device (5) with the outer race feed structure (12), the second temperature regulating device (34) being provided on the second mixed gas pipe (33).
5. The polycrystalline silicon reduction furnace inner and outer ring feed split control structure according to claim 4, characterized in that the gas mixing device (5) comprises a static mixer.
6. The multi-crystal silicon reduction furnace inner and outer ring feeding split control structure according to claim 4, wherein the first TCS air inlet line (22) and the second TCS air inlet line (32) are connected to the same TCS source (9).
7. The polysilicon reduction furnace inner and outer feeding split control structure according to claim 4, wherein the first TCS air inlet line (22) and the second TCS air inlet line (32) are each provided with a flow meter (4).
8. The multi-crystal silicon reduction furnace inner and outer ring feeding split control structure according to claim 4, wherein flow regulating valves (6) are arranged on the cold hydrogen inlet pipeline (21), the hot hydrogen inlet pipeline (31), the first TCS inlet pipeline (22) and the second TCS inlet pipeline (32).
9. The multi-crystal silicon reduction furnace inner and outer ring feeding split control structure according to claim 8, wherein the front and rear positions of the flow regulating valves (6) on the cold hydrogen inlet pipeline (21), the hot hydrogen inlet pipeline (31), the first TCS inlet pipeline (22) and the second TCS inlet pipeline (32) are respectively provided with an on-off valve (101), and the flow regulating valves (6) and the on-off valves (101) in front and rear of the flow regulating valves form a pipeline control section.
10. The multi-crystal silicon reduction furnace inner and outer ring feeding split control structure according to claim 9, wherein the pipeline control sections on the cold hydrogen inlet pipeline (21), the hot hydrogen inlet pipeline (31), the first TCS inlet pipeline (22) and the second TCS inlet pipeline (32) are all connected in parallel with a bypass (10), and the bypass (10) is provided with an on-off valve (101).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202321337392.1U CN220165840U (en) | 2023-05-29 | 2023-05-29 | Inner and outer ring feeding and partial control structure of polysilicon reduction furnace |
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| CN202321337392.1U CN220165840U (en) | 2023-05-29 | 2023-05-29 | Inner and outer ring feeding and partial control structure of polysilicon reduction furnace |
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