CN220132343U - Chemical vapor deposition equipment and system - Google Patents
Chemical vapor deposition equipment and system Download PDFInfo
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- CN220132343U CN220132343U CN202321496140.3U CN202321496140U CN220132343U CN 220132343 U CN220132343 U CN 220132343U CN 202321496140 U CN202321496140 U CN 202321496140U CN 220132343 U CN220132343 U CN 220132343U
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- quartz
- vapor deposition
- chemical vapor
- quartz boat
- furnace tube
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 41
- 239000010453 quartz Substances 0.000 claims abstract description 187
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 187
- 235000012431 wafers Nutrition 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910001220 stainless steel Inorganic materials 0.000 claims description 16
- 239000010935 stainless steel Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 abstract description 20
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 238000002161 passivation Methods 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses chemical vapor deposition equipment and a system, wherein the chemical vapor deposition equipment comprises a furnace tube vertically arranged, a quartz boat assembly vertically arranged in the furnace tube and a furnace door positioned below the furnace tube, wherein a support base is arranged on the furnace door and used for supporting the quartz boat assembly; the quartz boat component comprises a quartz tray and a plurality of quartz boats vertically placed on the quartz tray, the quartz boats are arranged in a plurality of rows, a plurality of limiting grooves are formed in the quartz tray, the quartz boats comprise bottom plates, the bottom plates are placed in the limiting grooves, and the limiting grooves are used for limiting the bottom plates. In the embodiment of the utility model, each quartz boat is independently limited, so that the placement stability of the quartz boat is improved, and the quartz boat is prevented from shifting in the whole carrying process and the furnace tube placing process of the quartz boat assembly.
Description
Technical Field
The utility model relates to the technical field of photovoltaics, in particular to chemical vapor deposition equipment and a chemical vapor deposition system.
Background
The chemical vapor deposition (Chemical Vapor Deposition, CVD) process is one of the processes of epitaxial thin film growth, semiconductor fabrication, photovoltaic fabrication. At present, deposition of a poly-silicon (polysilicon) layer on a silicon wafer is mainly realized by using LPCVD (Low Pressure Chemical Vapor Deposition) equipment.
In the prior art, LPCVD equipment comprises a quartz furnace tube, a quartz boat and a silicon carbide paddle, wherein the quartz furnace tube is generally horizontally arranged, the quartz boat is used for bearing silicon wafers, the quartz boat is placed on the silicon carbide (SiC) paddle, and the quartz boat and the silicon carbide paddle are commonly horizontally placed in the quartz furnace tube.
However, in order to facilitate the airflow, the bottom of the horizontal silicon carbide paddle is hollowed, the quartz boat is suspended on the silicon carbide paddle through side lugs on two sides of the quartz boat, and the quartz boat and the silicon carbide paddle are placed in a quartz furnace tube, so that the placement stability of the quartz boat is poor, and the position of the quartz boat is easily deviated from a set position.
Disclosure of Invention
The utility model provides chemical vapor deposition equipment and a chemical vapor deposition system, and aims to solve the problems that the placement stability of a quartz boat is poor, and the position of the quartz boat is easy to deviate from a set position.
In a first aspect, an embodiment of the present utility model provides a chemical vapor deposition apparatus, including a vertically disposed furnace tube, a quartz boat assembly disposed in the furnace tube, and a furnace door disposed below the furnace tube, where a support base is disposed on the furnace door, and the support base is used to support the quartz boat assembly;
the quartz boat assembly comprises a quartz tray and a plurality of quartz boats vertically placed on the quartz tray, wherein the quartz boats are arranged in a plurality of rows, a plurality of limit grooves are formed in the quartz tray, the quartz boats comprise bottom plates, the bottom plates are placed in the limit grooves, and the limit grooves are used for limiting the bottom plates.
Optionally, the material of the supporting base and the material of the furnace door are stainless steel.
Optionally, the quartz boat further comprises a plurality of first quartz columns arranged on the bottom plate, wherein a plurality of placing grooves are formed in the first quartz columns and are used for bearing silicon wafers;
the placing groove comprises an upper surface and a lower surface which are oppositely arranged, the upper surface is perpendicular to the height direction of the quartz boat, the lower surface is used for being in contact with the silicon wafer, and the lower surface is obliquely arranged along the depth direction of the placing groove.
Optionally, an included angle between the lower surface and the depth direction of the placement groove is 3-5 degrees.
Optionally, the supporting base includes supporting part and sets up place the portion on the supporting part, place and be provided with a plurality of stopper on the portion, a plurality of the stopper is used for the spacing of quartz tray.
Optionally, the quartz boat further comprises a second quartz column arranged on the bottom plate, the second quartz column is located at one side of the plurality of first quartz columns along a first direction, and the first direction is perpendicular to the height direction of the quartz boat.
Optionally, the support base is fixedly connected with the oven door.
Optionally, the quartz tray includes a first side wall and a second side wall that set up relatively, all be provided with a plurality of convex supporting lugs on first side wall and the second side wall.
In a second aspect, embodiments of the present utility model provide a chemical vapor deposition system including at least one chemical vapor deposition apparatus as described in any one of the preceding claims.
Optionally, the furnace door lifting device further comprises a lifting assembly connected with the furnace door, wherein the lifting assembly is used for driving the furnace door and the supporting base to lift along the height direction of the furnace tube.
In the embodiment of the utility model, as the quartz boat assembly is vertically placed in the furnace tube, the quartz tray does not need to be hollowed, and is directly contacted with the bottom plate of the quartz boat, so that the contact area of the quartz boat and the quartz tray is increased, and the bottom plate can be limited through the arrangement of the limiting groove, namely, each quartz boat is limited independently, the placement stability of the quartz boat is improved, the quartz boat is prevented from shifting in the whole carrying process and the furnace tube placing process of the quartz boat assembly, and the problems that the placement stability of the quartz boat is poor and the position of the quartz boat is easy to deviate from the set position are solved.
The foregoing description is only an overview of the present utility model, and is intended to provide a better understanding of the technical means of the present utility model, as it is embodied in the present specification, and is intended to provide a better understanding of the above and other objects, features and advantages of the present utility model, as it is embodied in the following description.
Drawings
FIG. 1 is a schematic diagram of a chemical vapor deposition apparatus according to an embodiment of the present utility model;
FIG. 2 is a schematic diagram of a chemical vapor deposition apparatus according to an embodiment of the present utility model;
FIG. 3 is a schematic view of a structure of a quartz boat assembly, a support base, and a pedestal provided in an embodiment of the present utility model;
FIG. 4 is a schematic view of a quartz boat assembly, a support base and a furnace door according to an embodiment of the present utility model;
FIG. 5 is a schematic view of a supporting base and a furnace door according to an embodiment of the present utility model;
FIG. 6 is a schematic view of a quartz boat assembly according to an embodiment of the present utility model;
fig. 7 is a schematic structural diagram of a quartz tray according to an embodiment of the present utility model;
FIG. 8 is a schematic view of a quartz boat according to an embodiment of the present utility model; the method comprises the steps of carrying out a first treatment on the surface of the
Fig. 9 is a schematic structural diagram of a placement groove on a first quartz column according to an embodiment of the present utility model;
fig. 10 is a schematic structural diagram of a placement groove according to an embodiment of the present utility model;
FIG. 11 is a schematic diagram of a chemical vapor deposition system according to an embodiment of the present utility model.
Reference numerals:
the device comprises a 10-deposition furnace, a 11-furnace tube, a 12-furnace door, a 13-supporting base, a 131-supporting part, a 132-placing part, a 133-limiting block, a 14-base, a 20-quartz boat, a 21-top plate, a 22-bottom plate, a 23-first quartz column, a 231-placing groove, a 232-upper surface, a 233-lower surface, a 24-second quartz column, a 30-quartz tray, a 31-limiting groove, a 32-first side wall, a 33-supporting lug, a 40-silicon wafer, a 50-lifting assembly, a 51-lifting slide rail, a 52-slide block and a 53-connecting seat.
Detailed Description
Exemplary embodiments of the present utility model will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present utility model are shown in the drawings, it should be understood that the present utility model may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the utility model to those skilled in the art.
Referring to fig. 1, 4, 6 and 7, an embodiment of the present utility model discloses a chemical vapor deposition apparatus, which includes a vertically disposed furnace tube 11, a quartz boat assembly vertically disposed in the furnace tube 11, and a furnace door 12 disposed below the furnace tube 11, wherein a support base 13 is disposed on the furnace door 12, and the support base 13 is used for supporting the quartz boat assembly; the quartz boat assembly comprises a quartz tray 30 and a plurality of quartz boats 20 vertically arranged on the quartz tray 30, wherein the quartz boats 20 are arranged in a plurality of rows, a plurality of limiting grooves 31 are formed in the quartz tray 30, the quartz boats 20 comprise bottom plates 22, the bottom plates 22 are arranged in the limiting grooves 31, and the limiting grooves 31 are used for limiting the bottom plates 22.
Specifically, the tunneling oxide passivation contact (Poly passivation) technology can be applied to battery structures such as TOPCON (Tunnel Oxide Passivated Contact, tunneling oxide passivation contact) batteries, TBC (Tunneling oxide Passivated contact Back Contact, tunneling oxide passivation contact back contact) batteries, and the like, and becomes a main current technology route of next-generation batteries due to excellent passivation performance and compatibility with existing production lines. The chemical vapor deposition equipment provided by the embodiment of the utility model is particularly LPCVD equipment. The LPCVD apparatus is used for realizing the deposition of a poly-silicon layer on a silicon wafer.
The chemical vapor deposition apparatus includes a deposition furnace 10, and the deposition furnace 10 includes the furnace tube 11, a furnace door 12, and a support base 13. The deposition furnace 10 further includes a base 14, and the furnace tube 11 may be detachably connected to the base 14. The furnace door 12 is sealed and arranged at the bottom end of the base 14. Referring to fig. 11, the door 12 is lifted by an external lifting assembly 50, and when the door 12 is lifted, the support base 13 is lifted along with the lifting of the door 12. The lifting assembly 50 may include a lifting slide rail 51, a slider 52 slidably connected to the lifting slide rail 51 along the height direction of the furnace tube 11, and a connection seat 53 connected to the slider 52, where the connection seat 53 is connected to the bottom surface of the furnace door 12 facing away from the furnace tube 11. The extending direction of the lifting slide rail 51 is identical to the height direction of the furnace tube 11, and the height direction of the furnace tube 11 can be referred to the direction indicated by the arrow D in fig. 11.
The quartz boat assembly may include a plurality of quartz boats 20 and quartz trays 30. When the quartz boat assembly is placed in the deposition furnace 10, the furnace door 12 and the supporting base 13 are firstly lowered by the lifting assembly 50, then the quartz boat assembly is placed on the supporting base 13, and then the furnace door 12 and the supporting base 13 are lifted by the lifting assembly 50 until the furnace door 12 is sealed and arranged at the bottom end of the base 14, and at this time, the quartz boat assembly is positioned in the furnace tube 11. The quartz boat assembly may be placed on the support base 13 by a robot.
The furnace tube 11 may be made of quartz or stainless steel. The stainless steel is specifically high temperature resistant stainless steel, and the high temperature resistant stainless steel needs to bear the highest temperature of the chemical vapor deposition equipment during operation, for example, the high temperature resistant stainless steel needs to bear the temperature of 1000 ℃. The inner wall of the stainless steel furnace tube 11 may be provided with an insulating coating.
The number of the quartz boats 20 placed on the quartz tray 30 may be set according to practical requirements, such as four, and the four quartz boats 20 are arranged in two rows and two columns. When the quartz boat assembly is placed on the support base 13, the quartz tray 30 is placed on the support base 13, and the plurality of quartz boats 20 are placed on the quartz tray 30. The process of placing the quartz boat 20 on the quartz tray 30 may be realized by an automated placement mechanism, and after the placement of the plurality of quartz boats 20, the quartz boat assembly including the plurality of quartz boats 20 and the quartz tray 30 is transported to the position of the deposition furnace 10 by a transport mechanism, and then the quartz boat assembly is placed on the support base 13. The conveyor may be a conveyor belt conveyor.
Referring to fig. 8, the quartz boat 20 includes a top plate 21 and a bottom plate 22 disposed opposite to each other up and down. The number of the limit grooves 31 is equal to that of the quartz boats 20. The shape and size of the limit groove 31 matches the shape and size of the bottom plate 22. When the cross section of the bottom plate 22 is rectangular, the limit groove 31 has a rectangular groove structure.
In the embodiment of the utility model, since the quartz boat assembly is vertically placed in the furnace tube 11, the quartz tray 30 does not need to be hollowed, the quartz tray 30 is directly contacted with the bottom plate 22 of the quartz boat 20, the contact area between the quartz boat 20 and the quartz tray 30 is increased, and the bottom plate 22 can be limited by the arrangement of the limiting groove 31, namely, each quartz boat 20 is limited independently, so that the placement stability of the quartz boat is improved, the quartz boat 20 is prevented from being shifted in the whole carrying process of the quartz boat assembly and the process of placing the quartz boat into the furnace tube 11, and the problems that the placement stability of the quartz boat is poor and the position of the quartz boat is easy to deviate from the set position are solved.
In addition, the support base 13 can ensure the lowest height of the quartz boat assembly in the furnace tube 11 while supporting the quartz boat assembly so that the quartz boat assembly is positioned in a constant temperature area; in addition, in the process of placing the quartz boat assembly on the support base 13, the quartz tray 30 and the plurality of quartz boats 20 placed on the quartz tray are placed on the support base 13 together, and the plurality of quartz boats 20 can be placed on the support base 13 only by one carrying without carrying the plurality of quartz boats 20 for multiple times, so that the production efficiency is improved.
When the furnace tube 11 is made of stainless steel, the stainless steel has high toughness and is not easy to crack and damage, so that the service life of the furnace tube 11 is prolonged, frequent replacement of the furnace tube 11 is avoided, and the maintenance cost of chemical vapor deposition equipment is reduced. In the prior art, when a deposited layer attached to the inner wall of a quartz furnace tube needs to be cleaned, the quartz furnace tube needs to be detached for cleaning. When the material of the furnace tube 11 is stainless steel, the furnace tube 11 of the stainless steel can be rapidly cooled, so that the deposited layer attached to the inner wall of the furnace tube 11 is easy to fall off, the falling off of the deposited layer can be realized under the condition that the furnace tube 11 is not dismounted, and the running time of chemical vapor deposition equipment is prolonged. According to analysis, when the material of the furnace tube 11 is stainless steel, compared with a horizontal LPCVD device adopting a quartz furnace tube, the operation time of the chemical vapor deposition device is improved by about 0.5%.
The material of the supporting base 13 and the material of the furnace door 12 are both stainless steel.
Specifically, the material of the support base 13 and the material of the oven door 12 may be high temperature resistant stainless steel. In the embodiment of the utility model, the supporting base 13 and the furnace door 12 which are made of stainless steel have higher bearing so as to support more quartz boats, the bearing performance of the supporting base 13 and the furnace door 12 and the number of quartz boats which can be borne are improved, and the material cost is lower. In the prior art, two quartz boats are placed in front of and behind a quartz furnace tube of the horizontal LPCVD apparatus, in the embodiment of the utility model, two rows of quartz boats 20 can be placed in the deposition furnace 10, and compared with the horizontal LPCVD apparatus in the prior art, the wafer loading amount and the apparatus productivity are doubled.
Referring to fig. 8, 9 and 10, the quartz boat 20 further includes a plurality of first quartz columns 23 disposed on the bottom plate 22, wherein a plurality of placement grooves 231 are formed on the first quartz columns 23, and the placement grooves 231 are used for carrying the silicon wafers 40; the placing groove 231 includes an upper surface 232 and a lower surface 233 which are oppositely disposed, the upper surface 232 is perpendicular to the height direction of the quartz boat 20, the lower surface 233 is for contacting the silicon wafer 40, and the lower surface 233 is obliquely disposed along the depth direction of the placing groove 231.
Specifically, a plurality of first quartz columns 23 are located between the top plate 21 and the bottom plate 22. The number of the first quartz columns 23 may be set according to actual demands, for example, four. Four first quartz columns 23 are respectively located on both sides of the bottom plate 22 in a second direction, which can be referred to as a direction indicated by an arrow C in fig. 8. The second direction is perpendicular to the height direction of the quartz boat 20.
The plurality of placing grooves 231 are spaced apart in the height direction of the quartz boat 20. The height direction of the quartz boat 20 may be referred to as the direction indicated by the arrow a in fig. 8. The placing grooves 231 on the two first quartz columns 23 positioned at one side of the second direction are in one-to-one correspondence with the placing grooves 231 on the two first quartz columns 23 positioned at the other side of the second direction along the same horizontal direction, and the notch of the placing groove 231 on the two first quartz columns 23 positioned at one side of the second direction is opposite to the notch of the placing groove 231 on the two first quartz columns 23 positioned at the other side of the second direction.
The upper surfaces 232 are disposed in parallel. When the silicon wafer 40 is placed in the placement groove 231, the silicon wafer 40 is in contact with the lower surface 233. The depth direction of the placement groove 231 is parallel to the upper surface 232 and coincides with the second direction. In the embodiment of the utility model, the lower surface 233 is obliquely arranged along the depth direction of the placing groove 231, so that the contact between the edge of the silicon wafer 40 and the lower surface 233 is in line contact, the contact area between the silicon wafer 40 and the placing groove 231 is reduced, and defects such as surface scratch and the like of the silicon wafer 40 are avoided.
The angle between the lower surface 233 and the depth direction of the placement groove 231 is 3 degrees to 5 degrees.
Specifically, the included angle between the lower surface 233 and the depth direction of the placement groove 231 may be 3 degrees to 5 degrees with reference to α shown in fig. 10, for example, α may be 3 degrees, 3.5 degrees, 4 degrees, 4.5 degrees, 5 degrees, etc. In the embodiment of the present utility model, by setting the included angle between the lower surface 233 and the depth direction of the placement groove 231 within this range, on the basis of ensuring that the contact between the edge of the silicon wafer 40 and the lower surface 233 is line contact, the notch of the placement groove 231 is larger due to the overlarge inclination is avoided, and thus the number of placement grooves 231 which can be opened on the first quartz column 23 is reduced.
Referring to fig. 5, the support base 13 includes a support portion 131 and a placement portion 132 provided on the support portion 131, and a plurality of stoppers 133 are provided on the placement portion 132, the plurality of stoppers 133 being used for the restriction of the quartz tray 30.
Specifically, the supporting portion 131 is connected to the oven door 12, and the supporting portion 131 is integrally formed with the placement portion 132. The placement portion 132 may have a rectangular plate structure, and four edges of the placement portion 132 may be provided with one stopper 133, and at this time, the placement portion 132 is provided with four stoppers 133, and the four stoppers 133 are commonly used for limiting the quartz tray 30.
In the embodiment of the utility model, the quartz tray 30 can be limited by the arrangement of the limiting block 133, so that the stability of the quartz boat assembly in the process of being placed in the furnace tube 11 is ensured, and the quartz boat assembly is prevented from shifting relative to the supporting base 13.
Referring to fig. 8, the quartz boat 20 further includes a second quartz column 24 provided on the bottom plate 22, the second quartz column 24 being located at one side of the plurality of first quartz columns 23 in a first direction, the first direction being perpendicular to the height direction of the quartz boat 20.
Specifically, the second quartz column 24 is located between the top plate 21 and the bottom plate 22. The first direction may refer to the direction shown by the arrow B in fig. 8. The silicon wafer 40 is placed in the first direction while being placed in the placing groove 231, and is placed from a side of the plurality of first quartz columns 23 facing away from the second quartz column 24. In the embodiment of the utility model, by arranging the second quartz column 24, the silicon wafers 40 can be prevented from sliding out when the quartz boat 20 is inclined in the carrying process.
The supporting base 13 is fixedly connected with the furnace door 12.
In particular, the support base 13 may be welded to the oven door 12, i.e. the support base 13 is integral with the oven door 12 and not detachable. In the embodiment of the utility model, the support base 13 is fixedly connected with the furnace door 12, so that the connection performance of the support base 13 and the furnace door 12 can be ensured, and the lifting consistency of the support base 13 and the furnace door 12 is ensured.
Referring to fig. 7, the quartz tray 30 includes a first sidewall 32 and a second sidewall disposed opposite to each other, and a plurality of protruding support lugs 33 are disposed on each of the first sidewall 32 and the second sidewall.
Specifically, two supporting lugs 33 are provided on each of the first side wall 32 and the second side wall. The support lugs 33 are used for overall handling of the quartz boat assembly. In the embodiment of the utility model, the quartz boat assembly is convenient to carry by arranging the supporting lugs 33.
Simulation analysis shows that when the chemical vapor deposition equipment provided by the embodiment of the utility model operates, the gas flow rate of the region within 1mm of the edge of the silicon wafer 40 carried by the quartz boat 20 is higher, and the gas flow rates of the other regions of the silicon wafer 40 are consistent. The difference of the surface temperatures at different areas of the silicon wafer 40 is within 0.3 ℃ to meet the use requirements. The 1mm portion of the edge of the silicon wafer 40 is etched in the subsequent process, and even if the thickness is different, the thickness is not affected.
In a second aspect, referring to fig. 11, an embodiment of the present utility model further discloses a chemical vapor deposition system, including at least one chemical vapor deposition apparatus according to any one of the above. The chemical vapor deposition system comprises the chemical vapor deposition device, so that the chemical vapor deposition device has the beneficial effects and is not repeated herein.
The chemical vapor deposition system provided by the embodiment of the utility model further comprises a lifting assembly 50 connected with the furnace door 12, wherein the lifting assembly 50 is used for driving the furnace door 12 and the support base 13 to lift along the height direction of the furnace tube 11.
Specifically, the lifting assembly 50 may include a lifting slide rail 51, a slider 52 slidingly connected to the lifting slide rail 51 along the height direction of the furnace tube 11, and a connection seat 53 connected to the slider 52, where the connection seat 53 is connected to the bottom surface of the furnace door 12 facing away from the furnace tube 11. The extending direction of the lifting slide rail 51 is identical to the height direction of the furnace tube 11, and the height direction of the furnace tube 11 can be referred to the direction indicated by the arrow D in fig. 11. The lifting slide rail 51 may be internally provided with a lifting screw rod mechanism, the lifting screw rod mechanism includes a screw rod and a nut connected to the screw rod, the nut is connected to the slide block 52, and the screw rod may be driven to rotate by a motor. In the embodiment of the utility model, the furnace door 12 and the supporting base 13 can be driven to lift by the arrangement of the lifting assembly 50, so that the quartz boat assembly is placed on the supporting base 13 and is placed in the furnace tube 11.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The embodiments of the present utility model have been described above with reference to the accompanying drawings, but the present utility model is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present utility model and the scope of the claims, which are to be protected by the present utility model.
Claims (10)
1. The chemical vapor deposition equipment is characterized by comprising a furnace tube vertically arranged, a quartz boat assembly vertically arranged in the furnace tube and a furnace door positioned below the furnace tube, wherein a support base is arranged on the furnace door and used for supporting the quartz boat assembly;
the quartz boat assembly comprises a quartz tray and a plurality of quartz boats vertically placed on the quartz tray, wherein the quartz boats are arranged in a plurality of rows, a plurality of limit grooves are formed in the quartz tray, the quartz boats comprise bottom plates, the bottom plates are placed in the limit grooves, and the limit grooves are used for limiting the bottom plates.
2. The chemical vapor deposition apparatus according to claim 1, wherein the material of the support base and the material of the door are stainless steel.
3. The chemical vapor deposition apparatus of claim 1, wherein the quartz boat further comprises a plurality of first quartz columns arranged on the bottom plate, wherein a plurality of placing grooves are formed in the first quartz columns, and the placing grooves are used for bearing silicon wafers;
the placing groove comprises an upper surface and a lower surface which are oppositely arranged, the upper surface is perpendicular to the height direction of the quartz boat, the lower surface is used for being in contact with the silicon wafer, and the lower surface is obliquely arranged along the depth direction of the placing groove.
4. The chemical vapor deposition apparatus according to claim 3, wherein an angle between the lower surface and a depth direction of the placement groove is 3 degrees to 5 degrees.
5. The chemical vapor deposition apparatus according to claim 1, wherein the support base includes a support portion and a placement portion provided on the support portion, a plurality of stoppers are provided on the placement portion, and the plurality of stoppers are used for the restriction of the quartz tray.
6. The chemical vapor deposition apparatus of claim 3, wherein the quartz boat further comprises a second quartz column disposed on the bottom plate, the second quartz column being located at one side of the plurality of first quartz columns in a first direction, the first direction being perpendicular to a height direction of the quartz boat.
7. The chemical vapor deposition apparatus of claim 1, wherein the support base is fixedly connected to the oven door.
8. The chemical vapor deposition apparatus of claim 1, wherein the quartz tray comprises a first sidewall and a second sidewall disposed opposite each other, the first sidewall and the second sidewall each having a plurality of raised support lugs disposed thereon.
9. A chemical vapor deposition system comprising at least one chemical vapor deposition apparatus according to any one of claims 1 to 8.
10. The chemical vapor deposition system of claim 9 further comprising a lift assembly coupled to the furnace door, the lift assembly configured to drive the furnace door and the support base to lift along a height of the furnace tube.
Priority Applications (1)
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CN202321496140.3U CN220132343U (en) | 2023-06-12 | 2023-06-12 | Chemical vapor deposition equipment and system |
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CN202321496140.3U CN220132343U (en) | 2023-06-12 | 2023-06-12 | Chemical vapor deposition equipment and system |
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CN220132343U true CN220132343U (en) | 2023-12-05 |
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CN202321496140.3U Active CN220132343U (en) | 2023-06-12 | 2023-06-12 | Chemical vapor deposition equipment and system |
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