CN220057000U - Hard film - Google Patents
Hard film Download PDFInfo
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- CN220057000U CN220057000U CN202321387052.XU CN202321387052U CN220057000U CN 220057000 U CN220057000 U CN 220057000U CN 202321387052 U CN202321387052 U CN 202321387052U CN 220057000 U CN220057000 U CN 220057000U
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- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 13
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 230000008021 deposition Effects 0.000 claims abstract description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 10
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 6
- 230000001681 protective effect Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000006187 pill Substances 0.000 description 3
- 230000037452 priming Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- DZPJVKXUWVWEAD-UHFFFAOYSA-N [C].[N].[Si] Chemical compound [C].[N].[Si] DZPJVKXUWVWEAD-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 230000003678 scratch resistant effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Physical Vapour Deposition (AREA)
Abstract
The utility model discloses a hard film, which belongs toIn the field of protective films, including: the substrate and the AF layer which is arranged opposite to the substrate, wherein a CSiN layer is arranged between the substrate and the AF layer, the thickness of the CSiN layer is 2-50nm, and a first SiO is arranged between the CSiN layer and the substrate 2 A Si layer of the first SiO 2 The thickness of the Si layer is 2-30nm, a second SiO is arranged between the CSiN layer and the AF layer 2 A Si layer of the second SiO 2 The thickness of the/Si layer is 2-50nm, the CSiN layer is formed by magnetron sputtering of a carbon silicon target, filling of nitrogen, and mixed deposition of the carbon silicon target, and the thickness of the AF layer is 2-50nm. According to the utility model, the scratch resistance can be effectively realized through the CSiN layer of the superhard material, and the scratch of the display screen is avoided.
Description
Technical Field
The utility model relates to a protective film, in particular to a hard film.
Background
The display screen is easy to produce scratches in the use process, such as a mobile phone cover plate, a vehicle-mounted cover plate and a television cover plate, and rubs with sharp objects, so that the CG cover plate is scratched, and the appearance is affected. Therefore, people form an AF film layer on the surface of the display screen by coating, but with frequent friction between the display screen (a mobile phone cover plate, a vehicle-mounted cover plate, a television cover plate and the like) and articles (pockets and fingers), the AF film layer on the CG cover plate is easy to fall off finally.
To avoid the AF layer from falling off, people use SiO 2 Priming, or SiO 2 +Al 2 O 3 Priming, combining with AF waterproof pill, producing better waterproof and scratch-proof effects. However, the film layer structure lacks hard materials, and the display screen is easy to scratch.
Accordingly, a person skilled in the art provides a hard film to solve the problems set forth in the background art described above.
Disclosure of Invention
The utility model aims to provide a hard film, which can effectively resist scratches through a CSiN layer of superhard material, and avoid scratches on a display screen so as to solve the problems in the prior art.
In order to achieve the above purpose, the present utility model provides the following technical solutions:
a hard film comprising: the substrate and the AF layer opposite to the substrate, wherein a CSiN layer is arranged between the substrate and the AF layer.
As a further scheme of the utility model: the thickness of the CSIN layer is 2-50nm.
As still further aspects of the utility model: a first SiO is arranged between the CSiN layer and the base material 2 /SAnd (3) an i layer.
As still further aspects of the utility model: the first SiO 2 The thickness of the Si layer is 2-30nm.
As still further aspects of the utility model: a second SiO is arranged between the CSiN layer and the AF layer 2 A Si layer.
As still further aspects of the utility model: the second SiO 2 The thickness of the Si layer is 2-50nm.
As still further aspects of the utility model: the CSIN layer is formed by magnetron sputtering of a carbon silicon target, filling of nitrogen, and mixed deposition of the carbon silicon target.
As still further aspects of the utility model: the AF layer has a thickness of 2-50nm.
Compared with the prior art, the utility model has the beneficial effects that:
1. according to the utility model, the scratch resistance can be effectively realized through the CSiN layer of the superhard material, and the scratch of the display screen is avoided.
2. The utility model deposits a first SiO on the surface of the substrate 1 2 Si layer, CSIN layer, second SiO 2 The three-layer film system of the/Si layer is firmly combined with the film layer of the AF layer, and the AF layer is not easy to fall off.
3. The hard film disclosed by the utility model is high in hardness, can keep the original optical standard, is suitable for CG panels such as mobile phone cover plates, vehicle-mounted cover plates, television cover plates and the like, and is relatively wide in applicability.
Drawings
Fig. 1 is a schematic diagram of a hard film structure.
In the figure: 1. a substrate; 2. first SiO 2 a/Si layer; 3. a CSIN layer; 4. second SiO 2 a/Si layer; 5. an AF layer.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
In the present utility model, the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", "outer", "vertical", "horizontal", "lateral", "longitudinal" and the like indicate an azimuth or a positional relationship based on that shown in the drawings. These terms are only used to better describe the present utility model and its embodiments and are not intended to limit the scope of the indicated devices, elements or components to the particular orientations or to configure and operate in the particular orientations.
Also, some of the terms described above may be used to indicate other meanings in addition to orientation or positional relationships, for example, the term "upper" may also be used to indicate some sort of attachment or connection in some cases. The specific meaning of these terms in the present utility model will be understood by those of ordinary skill in the art according to the specific circumstances.
Furthermore, the terms "mounted," "configured," "provided," "connected," and "connected" are to be construed broadly. For example, it may be a fixed connection, a removable connection, or a unitary construction; may be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements, or components. The specific meaning of the above terms in the present utility model can be understood by those of ordinary skill in the art according to the specific circumstances.
Furthermore, the terms "first," "second," and the like, are used primarily to distinguish between different devices, elements, or components (the particular species and configurations may be the same or different), and are not used to indicate or imply the relative importance and number of devices, elements, or components indicated. Unless otherwise indicated, the meaning of "a plurality" is two or more.
As mentioned in the background art of the utility model, the inventors have found that the conventional AF film is coated by SiO 2 Priming, or SiO 2 +Al 2 O 3 The base is made up,the film coating mode is combined with the AF waterproof pill, and has good waterproof and scratch-proof effects, but the film layer structure lacks of hard materials, and a display screen is easy to scratch.
In order to solve the defects, the utility model discloses a hard film, wherein a carbon-silicon target is sputtered by magnetron sputtering and is filled with nitrogen, and the carbon-silicon target is mixed and deposited to form a CSiN layer 3 of superhard material, so that the hard film can be effectively scratch-resistant, and scratches on a display screen are avoided, and the defects are effectively solved.
How the above technical problems are solved by the scheme of the present utility model will be described in detail below with reference to the accompanying drawings.
Referring to fig. 1, in an embodiment of the present utility model, a hard film includes: a substrate 1, and an AF layer 5 disposed opposite to the substrate 1, wherein a CSiN layer 3 is disposed between the substrate 1 and the AF layer 5. CSiN (carbon silicon nitrogen) is a semiconductor material composed of silicon, carbon and nitrogen ternary compounds, has excellent optical, electrical, magnetic, thermodynamic and mechanical properties of silicon carbide and silicon nitride, and is a good material for being used as a coating film of a display screen, and scratch resistance of a hard film can be effectively improved through the CSiN layer 3, so that scratches generated when the display screen is used can be avoided.
In this embodiment: the thickness of the CSIN layer 3 is 2-50nm. The thickness of the CSIN layer 3 is too large, which is not beneficial to thinning the film body, and the thickness of the CSIN layer 3 is too small, which is too weak in scratch resistance, so that the thickness of the CSIN layer 3 can be selected to be 2-50nm, and the scratch resistance and thinning performance are considered.
In this embodiment: a first SiO is arranged between the CSiN layer 3 and the substrate 1 2 /Si layer 2. Wherein SiO is 2 The (silicon dioxide) has stable chemical property, does not react with water, and has higher fire resistance, high temperature resistance, small thermal expansion coefficient, high insulation, corrosion resistance, piezoelectric effect, resonance effect and unique optical characteristics. Si (silicon) has a high melting point (1410 ℃) and a high hardness, and has stable physical properties.
In this embodiment: first SiO 2 The thickness of the Si layer 2 is 2-30nm. First SiO 2 If the thickness of the Si layer 2 is too large, the film body is not thinned, and the first SiO 2 If the thickness of the Si layer 2 is too small, the scratch resistance is too weak, so that the first SiO can be selected 2 The thickness of the Si layer 2 is 2-30nm to give a compromise between scratch resistance and thinning properties.
In this embodiment: a second SiO is arranged between the CSiN layer 3 and the AF layer 5 2 /Si layer 4.
In this embodiment: second SiO 2 The thickness of the/Si layer 4 is 2-50nm.
In this embodiment: the CSIN layer 3 is formed by magnetron sputtering of a carbon silicon target, filling of nitrogen, and mixed deposition of the carbon silicon target.
In this embodiment: the thickness of the AF layer 5 is 2-50nm.
In this embodiment: glass (glass) is used as the substrate 1.
The working principle of the utility model is as follows: when preparing a hard film, a magnetron sputtering process is used for sputtering an intermediate frequency silicon target, a carbon silicon target and a silicon target in sequence, and finally, AF is evaporated and deposited on the surface of the substrate 1. Wherein the first SiO is formed by magnetron sputtering a silicon target 2 Si layer 2, it is noted that during this process oxygen is introduced to form SiO 2 And forming a Si layer without filling oxygen. And sputtering a carbon-silicon target by using a magnetron, filling nitrogen, and performing mixed deposition on the carbon-silicon target to form the CSiN layer 3. Then forming a second SiO again by magnetron sputtering the silicon target 2 The Si layer 4 is to be understood that SiO is formed by oxygen charging during this process 2 And forming a Si layer without filling oxygen. Finally, in the second SiO 2 The AF pill is evaporated from the surface of Si layer 4 to form AF layer 5, thereby depositing a film comprising a first SiO on the surface of substrate 1 2 Si layer 2, CSIN layer 3, second SiO 2 The three-layer film system of the Si layer 4, wherein the CSiN layer 3 of the superhard material is arranged, can effectively resist scratches and avoid scratches generated on a display screen, and the three-layer film system is firmly combined with the film layer of the AF layer 5, so that the AF layer 5 is not easy to fall off. In addition, the hard film of the finished product is high in hardness, can keep the original optical standard, is suitable for CG panels such as mobile phone cover plates, vehicle-mounted cover plates, television cover plates and the like, and is wide in applicability.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present utility model without departing from the spirit or scope of the utility model. Thus, it is intended that the present utility model also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
The foregoing description is only a preferred embodiment of the present utility model, but the scope of the present utility model is not limited thereto, and any person skilled in the art, who is within the scope of the present utility model, should make equivalent substitutions or modifications according to the technical solution of the present utility model and the inventive concept thereof, and should be covered by the scope of the present utility model.
Claims (8)
1. A hard film, comprising:
a substrate, and an AF layer provided opposite to the substrate,
wherein, be equipped with the CSIN layer between substrate and the AF layer.
2. A rigid film according to claim 1, wherein the CSiN layer has a thickness of 2-50nm.
3. A hard film according to claim 1 or 2, wherein a first SiO is provided between the CSiN layer and the substrate 2 A Si layer.
4. A hard film according to claim 3, wherein the first SiO 2 The thickness of the Si layer is 2-30nm.
5. A hard film according to claim 1 or 2, wherein a second SiO is provided between the CSiN layer and the AF layer 2 A Si layer.
6. A hard film according to claim 5, wherein the second SiO 2 The thickness of the Si layer is 2-50nm.
7. A hard film according to claim 1 wherein the CSiN layer is formed by magnetron sputtering a carbon silicon target and filling with nitrogen gas, the carbon silicon target being deposited by hybrid deposition.
8. A hard film according to claim 1, wherein the AF layer has a thickness of 2-50nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321387052.XU CN220057000U (en) | 2023-06-02 | 2023-06-02 | Hard film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321387052.XU CN220057000U (en) | 2023-06-02 | 2023-06-02 | Hard film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220057000U true CN220057000U (en) | 2023-11-21 |
Family
ID=88789329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321387052.XU Active CN220057000U (en) | 2023-06-02 | 2023-06-02 | Hard film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220057000U (en) |
-
2023
- 2023-06-02 CN CN202321387052.XU patent/CN220057000U/en active Active
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