CN219980832U - Near infrared communication transmitting circuit, power terminal and power system - Google Patents
Near infrared communication transmitting circuit, power terminal and power system Download PDFInfo
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- CN219980832U CN219980832U CN202321578289.6U CN202321578289U CN219980832U CN 219980832 U CN219980832 U CN 219980832U CN 202321578289 U CN202321578289 U CN 202321578289U CN 219980832 U CN219980832 U CN 219980832U
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Abstract
The utility model relates to a near infrared communication transmitting circuit, a power terminal and a power system, wherein in the near infrared communication transmitting circuit, a first resistor is connected with a VDD pin through a second resistor, and a base electrode, an emitter and a collector of the first resistor are correspondingly connected with a second end, a second end and a first end of a third resistor respectively through setting a first resistor to a fifth resistor and a first triode and a second triode; the first end of the fourth resistor is connected with the data sending pin, and the second end of the fourth resistor is connected with the grounding end through the fifth resistor; the base electrode, the collector electrode and the emitter electrode of the second triode are correspondingly connected with the second end of the fourth resistor, the second end of the third resistor and the grounding end respectively, the anode of the infrared light-emitting diode is connected with the second end of the third resistor, and the cathode of the infrared light-emitting diode is connected with the grounding end. Therefore, the electric quantity stored by the junction capacitor of the infrared light-emitting diode can be quickly released, so that the infrared light-emitting diode obtains better falling edge waveform, and near infrared communication success is ensured.
Description
Technical Field
The present utility model relates to the field of communications, and in particular, to a near infrared communication transmitting circuit, an electric power terminal, and an electric power system.
Background
The overseas intelligent electric energy meter basically has the near infrared communication function, and under the general condition, the near infrared communication baud rate of the electric energy meter is designed to be 300bps to 9600bps, and under the communication rate, the reliability is high, the stability is good, and the requirement on a circuit is lower. When the near infrared communication of the electric energy meter needs higher baud rate, higher requirements on circuit and device type selection are put forward.
Currently, in the near infrared communication process, the near infrared uses current to drive an infrared light emitting diode (or a transmitting tube), so that the infrared light emitting diode generates fluctuation with alternate brightness, and the infrared receiver receives information. At a theoretical level, the information received by the infrared receiving tube is a square wave consistent with the driving signal of the light emitting diode.
However, the existing near infrared communication scheme has the following defects: because the materials selected in practice are not ideal devices, a certain junction capacitance exists on the PN junction of the light-emitting diode, and the light-emitting diode can be normally turned on or off only after the junction capacitance is charged or discharged by the circuit in the process of turning on or off the light-emitting diode on the circuit. As a response to the light emitting diode, the signal waveform received by the infrared receiving tube shows that a certain slope exists between the rising edge and the falling edge of the waveform; and because of the characteristic of the light-emitting diode, after the light-emitting diode is controlled to be in a cut-off state, the electric quantity of the junction capacitance of the light-emitting diode cannot be released, so that the emission current and the emission power of the light-emitting diode are gradually reduced, the infrared receiving tube at the receiving end still can receive signals and cannot be rapidly turned off, and the near infrared communication is failed.
Disclosure of Invention
The first technical problem to be solved by the present utility model is to provide a near infrared communication transmitting circuit capable of rapidly releasing the electric quantity of the junction capacitance of the light emitting diode to ensure successful communication.
The second technical problem to be solved by the utility model is to provide an electric power terminal with the near infrared communication transmitting circuit.
The third technical problem to be solved by the utility model is to provide a power system with the power terminal.
The utility model solves the first technical problem by adopting the technical scheme that: the near infrared communication emission circuit includes infrared emitting diode HL1, and its characterized in that still includes:
a first end of the first resistor R1 is connected with a transmitting data pin MCU_TXD of the terminal MCU, a second end of the first resistor R1 is connected with a first end of a second resistor R2, and a second end of the second resistor R2 is connected with a VDD pin;
the base electrode of the first triode V1 is connected with the second end of the first resistor R1, the emitter electrode of the first triode V1 is connected with the second end of the second resistor R2, and the collector electrode of the first triode V1 is connected with the first end of a third resistor R3;
a first end of the fourth resistor R4 is connected with the transmitting data pin mcu_txd, a second end of the fourth resistor R4 is connected with a first end of the fifth resistor R5, and a second end of the fifth resistor R5 is connected with the ground end GND;
the base electrode of the second triode V2 is connected with the second end of the fourth resistor R4, the collector electrode of the second triode V2 is connected with the second end of the third resistor R3, and the emitter electrode of the second triode V2 is connected with the grounding end GND;
the anode of the infrared light emitting diode HL1 is connected to the second end of the third resistor R3, and the cathode of the infrared light emitting diode HL1 is connected to the ground GND.
In the near infrared communication transmitting circuit, the resistance value of the first resistor R1 is 4.7kΩ, the resistance value of the second resistor R2 is 10kΩ, the resistance value of the third resistor R3 is 100 Ω, the resistance value of the fourth resistor R4 is 4.7kΩ, and the resistance value of the fifth resistor R5 is 2kΩ.
In the near infrared communication transmitting circuit, the terminal MCU drives the infrared light emitting diode HL1 to be started or closed through the data transmitting pin MCU_TXD.
Further, in the near infrared communication transmitting circuit, the signal output by the transmitting data pin mcu_txd is a square wave signal.
In the near infrared communication transmitting circuit, the terminal is an electric energy meter, and the communication baud rate of the electric energy meter is in the range of 300 bps-115200 bps.
In the near infrared communication transmitting circuit, the first triode V1 is a PNP transistor.
Further, in the near infrared communication transmitting circuit, the second triode V2 is an NPN transistor.
The utility model solves the second technical problem by adopting the technical proposal that: the power terminal is characterized in that any near infrared communication transmitting circuit is applied.
Further, in the present utility model, the power terminal is an electricity meter.
The utility model solves the third technical problem by adopting the technical scheme that: an electric power system, wherein the electric power terminal according to any one of the above is applied.
Compared with the prior art, the utility model has the advantages that: the near infrared communication emission circuit is provided with a first resistor, a fifth resistor, a first triode and a second triode, wherein the first resistor is connected with a VDD pin through the second resistor; the first end of the fourth resistor is connected with the data sending pin, and the second end of the fourth resistor is connected with the grounding end through the fifth resistor; the base electrode, the collector electrode and the emitter electrode of the second triode are correspondingly connected with the second end of the fourth resistor, the second end of the third resistor and the grounding end respectively; and the anode of the infrared light-emitting diode is connected with the second end of the third resistor, and the cathode of the infrared light-emitting diode is connected with the grounding end. Therefore, the electric quantity stored by the junction capacitor of the infrared light emitting diode can be quickly released, so that the infrared light emitting diode obtains better falling edge waveform, and the near infrared communication success is ensured. In addition, the near infrared communication transmitting circuit is simple, the material selection is simple, and MCU resources are not required to be additionally occupied.
Drawings
FIG. 1 is a schematic diagram of a transmit signal waveform of a prior art near infrared communication transmit circuit;
FIG. 2 is a schematic diagram of a near infrared communication transmitting circuit according to an embodiment of the utility model;
fig. 3 is a schematic diagram of a transmit signal waveform of a near infrared communication transmit circuit according to an embodiment of the present utility model.
Detailed Description
The utility model is described in further detail below with reference to the embodiments of the drawings.
The embodiment provides a near infrared communication transmitting circuit. Specifically, referring to fig. 1, the near infrared communication transmitting circuit of this embodiment includes an infrared light emitting diode HL1, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a first triode V1, and a second triode V2. Wherein:
the first end of the first resistor R1 is connected with a transmitting data pin MCU_TXD of the terminal MCU, the second end of the first resistor R1 is connected with the first end of the second resistor R2, and the second end of the second resistor R2 is connected with a VDD pin; wherein, the terminal is an ammeter;
the base electrode of the first triode V1 is connected with the second end of the first resistor R1, the emitter electrode of the first triode V1 is connected with the second end of the second resistor R2, and the collector electrode of the first triode V1 is connected with the first end of a third resistor R3;
the first end of the fourth resistor R4 is connected with the data transmission pin MCU_TXD, the second end of the fourth resistor R4 is connected with the first end of a fifth resistor R5, and the second end of the fifth resistor R5 is connected with the ground end GND;
the base electrode of the second triode V2 is connected with the second end of the fourth resistor R4, the collector electrode of the second triode V2 is connected with the second end of the third resistor R3, and the emitter electrode of the second triode V2 is connected with the grounding end GND;
the anode of the infrared light emitting diode HL1 is connected to the second end of the third resistor R3, and the cathode of the infrared light emitting diode HL1 is connected to the ground GND.
Specifically, in this embodiment, the resistance of the first resistor R1 is 4.7kΩ, the resistance of the second resistor R2 is 10kΩ, the resistance of the third resistor R3 is 100 Ω, the resistance of the fourth resistor R4 is 4.7kΩ, and the resistance of the fifth resistor R5 is 2kΩ.
The following describes the operation principle of the near infrared communication transmitting circuit in this embodiment with reference to fig. 2:
after the ammeter receives the signal, the transmitting data pin MCU_TXD of the ammeter MCU outputs a square wave signal, the infrared light emitting diode HL1 generates pulsating current through circuit conversion, and the upper computer processes the signal received by the infrared receiving tube, so that the whole process of near infrared communication is completed. The working details are described as follows:
the resistance values of the first resistor R1, the second resistor R2, the fourth resistor R4 and the fifth resistor R5 are adjusted according to the selection of the first triode V1 and the second triode V2, so that the data pin MCU TXD of the terminal MCU is in a cut-off state when the level is switched, even if the first triode V1 and the second triode V2 are simultaneously conducted, the normal operation of the circuit is not influenced, and the second triode V2 is in a cut-off state when the first triode V1 is conducted; when the first triode V1 is turned off, the second triode V2 is in a conducting state.
When the transmitting data pin MCU_TXD of the terminal MCU outputs a high level, the first triode V1 is cut off, no current is applied to the infrared light-emitting diode HL1, and the near infrared communication transmitting circuit does not work;
when the transmitting data pin MCU_TXD of the terminal MCU outputs a low level, the first triode V1 is conducted, the second triode V2 is in a cut-off state, and current passes through the first triode V1, the third resistor R3 and the infrared light emitting diode HL1, so that the infrared light emitting diode HL1 generates infrared rays (i.e. infrared signals) which fluctuate along with the current;
when the signal output by the data sending pin MCU TXD of the terminal MCU is switched from high level to low level, namely the first triode V1 is switched from the off state to the on state, the second triode V2 is switched from the amplifying state to the off state, the infrared light emitting diode HL1 can obtain better current conductivity, namely the emitting tube can obtain better rising edge communication waveform;
when the signal output by the data transmitting pin mcu_txd of the terminal MCU is switched from low level to high level, that is, the first transistor V1 is switched from on state to off state, the second transistor V2 is switched from off state to on state, and the second transistor V2 can rapidly release the electric quantity stored in the junction capacitor of the infrared light emitting diode HL1, so that the infrared light emitting diode HL1 obtains a better falling edge waveform. In this embodiment, the waveforms of the transmission signal and the waveform of the reception signal of the near infrared communication transmitting circuit are shown in fig. 3.
The embodiment also provides an electric power terminal applying the near infrared communication transmitting circuit, and the electric power terminal is an ammeter.
In addition, the embodiment also provides a power system, and the power system is applied with the power terminal.
While the preferred embodiments of the present utility model have been described in detail, it is to be clearly understood that the same may be varied in many ways by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model should be included in the protection scope of the present utility model.
Claims (10)
1. The near infrared communication emission circuit includes infrared emitting diode HL1, and its characterized in that still includes:
a first end of the first resistor R1 is connected with a transmitting data pin MCU_TXD of the terminal MCU, a second end of the first resistor R1 is connected with a first end of a second resistor R2, and a second end of the second resistor R2 is connected with a VDD pin;
the base electrode of the first triode V1 is connected with the second end of the first resistor R1, the emitter electrode of the first triode V1 is connected with the second end of the second resistor R2, and the collector electrode of the first triode V1 is connected with the first end of a third resistor R3;
a first end of the fourth resistor R4 is connected with the transmitting data pin mcu_txd, a second end of the fourth resistor R4 is connected with a first end of a fifth resistor R5, and a second end of the fifth resistor R5 is connected with a ground end GND;
the base electrode of the second triode V2 is connected with the second end of the fourth resistor R4, the collector electrode of the second triode V2 is connected with the second end of the third resistor R3, and the emitter electrode of the second triode V2 is connected with the grounding end GND;
the anode of the infrared light emitting diode HL1 is connected to the second end of the third resistor R3, and the cathode of the infrared light emitting diode HL1 is connected to the ground GND.
2. The near infrared communication transmitting circuit of claim 1, wherein the resistance of the first resistor R1 is 4.7kΩ, the resistance of the second resistor R2 is 10kΩ, the resistance of the third resistor R3 is 100 Ω, the resistance of the fourth resistor R4 is 4.7kΩ, and the resistance of the fifth resistor R5 is 2kΩ.
3. The near infrared communication transmitting circuit of claim 1, wherein said terminal MCU drives said infrared light emitting diode HL1 on or off through said transmit data pin mcu_txd thereof.
4. The near infrared communication transmitting circuit of claim 3, wherein the signal output by the transmit data pin mctxd is a square wave signal.
5. The near infrared communication transmitting circuit of any one of claims 1-4, wherein said terminal is an electric energy meter with a communication baud rate in a range of 300bps to 115200bps.
6. The near infrared communication transmitting circuit according to any one of claims 1 to 4, characterized in that said first transistor V1 is a PNP transistor.
7. The near infrared communication transmitting circuit of claim 6, wherein said second transistor V2 is an NPN transistor.
8. An electric power terminal, wherein the near infrared communication transmitting circuit according to any one of claims 1 to 7 is applied.
9. The power terminal of claim 8, wherein the power terminal is an electricity meter.
10. An electric power system, characterized in that an electric power terminal according to claim 8 or 9 is applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321578289.6U CN219980832U (en) | 2023-06-20 | 2023-06-20 | Near infrared communication transmitting circuit, power terminal and power system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321578289.6U CN219980832U (en) | 2023-06-20 | 2023-06-20 | Near infrared communication transmitting circuit, power terminal and power system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219980832U true CN219980832U (en) | 2023-11-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321578289.6U Active CN219980832U (en) | 2023-06-20 | 2023-06-20 | Near infrared communication transmitting circuit, power terminal and power system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219980832U (en) |
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2023
- 2023-06-20 CN CN202321578289.6U patent/CN219980832U/en active Active
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