CN219959030U - Suspension type Micro LED chip, drive backplate and display screen - Google Patents
Suspension type Micro LED chip, drive backplate and display screen Download PDFInfo
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- CN219959030U CN219959030U CN202320533944.XU CN202320533944U CN219959030U CN 219959030 U CN219959030 U CN 219959030U CN 202320533944 U CN202320533944 U CN 202320533944U CN 219959030 U CN219959030 U CN 219959030U
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- 239000000725 suspension Substances 0.000 title abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 229910052751 metal Inorganic materials 0.000 claims abstract description 69
- 239000002184 metal Substances 0.000 claims abstract description 69
- 230000008093 supporting effect Effects 0.000 claims abstract description 28
- 238000004806 packaging method and process Methods 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 3
- 229910018182 Al—Cu Inorganic materials 0.000 claims description 2
- 229910002846 Pt–Sn Inorganic materials 0.000 claims description 2
- 229910018885 Pt—Au Inorganic materials 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 29
- 229910002601 GaN Inorganic materials 0.000 description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 239000011651 chromium Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- Led Device Packages (AREA)
Abstract
The utility model discloses a suspension type Micro LED chip, a driving back plate and a display screen, which comprise a light-emitting component; the metal electrode is arranged on the bottom surface of the light-emitting assembly and used for being bonded with the driving backboard; the metal electrode comprises a substrate layer and at least one support part; the substrate layer is arranged opposite to the bottom surface of the light-emitting component and is provided with a gap with the light-emitting component; the support part is positioned in the gap and is respectively connected with the substrate layer and the light-emitting component. The substrate layer is assembled with the PCB, and the supporting part supports the light-emitting component, so that when the light-emitting component is positioned above the substrate layer, a gap is reserved in the bottom surface direction of the light-emitting component, and the light-emitting component is in a suspended state relative to the PCB, so that emergent light rays in the bottom surface direction of the light-emitting component are increased. Meanwhile, the metal electrode can reflect light, the emitted light in the bottom surface direction of the light-emitting component is reflected to the front surface of the light-emitting component, the emitted light in the front surface of the light-emitting component is increased, and the overall light-emitting brightness of the chip is improved.
Description
Technical Field
The utility model relates to the technical field of chip transfer, in particular to a suspended Micro LED chip, a driving backboard and a display screen.
Background
For the micro LED chip, the light emitted by the light emitting layer in the light emitting component is emitted at all angles, so that a part of light rays emitted by the light emitting layer are emitted to the bottom surface of the light emitting component besides the light rays emitted from the front surface of the light emitting component, and the bottom surface of the light emitting component is directly arranged on the PCB, so that the light rays emitted from the bottom surface of the light emitting component are blocked by the PCB; and part of light can be emitted from the side surface of the light-emitting component, so that the loss of the light emitted from the front surface of the whole light-emitting component is caused, and the light-emitting brightness of the Micro LED chip is lower.
Accordingly, the prior art is still in need of improvement and development.
Disclosure of Invention
The utility model aims to solve the technical problems of the prior art and provides a suspended Micro LED chip, a driving backboard and a display screen, aiming at improving the luminous brightness.
The technical scheme adopted for solving the technical problems is as follows:
a suspended Micro LED chip comprising a light emitting assembly, further comprising:
the metal electrode is arranged on the bottom surface of the light-emitting assembly, and the bottom surface of the light-emitting assembly is one surface for bonding with the driving backboard;
the metal electrode comprises a substrate layer and at least one support part; the substrate layer is arranged opposite to the bottom surface of the light-emitting component, and a gap is formed between the substrate layer and the light-emitting component; the supporting part is positioned in the gap and is respectively connected with the substrate layer and the light-emitting component.
Through the scheme, the metal electrode supports the light-emitting assembly from the bottom of the light-emitting assembly, so that the gap is reserved in the bottom direction of the light-emitting assembly, the light-emitting assembly is in a suspended state relative to the PCB, and emergent light rays in the bottom direction of the light-emitting assembly are increased; meanwhile, the metal electrode can reflect light, so that the light emitted from the bottom surface direction of the light-emitting component is reflected to the front surface of the light-emitting component, the light emitted from the front surface of the light-emitting component is increased, and the overall light-emitting brightness of the Micro LED chip is improved.
Optionally, the support part is one, and two ends of the support part are respectively connected with the center of the front surface of the substrate layer and the center of the bottom surface of the light emitting component.
Through the scheme, the supporting part can be used for connecting the substrate layer with the light-emitting component, so that the light-emitting component is stably supported, the quantity of the supporting parts is minimum, the volume of the gap is maximum, and the light emitted from the bottom surface direction of the light-emitting component is ensured to be reflected by the substrate layer to the front surface as much as possible.
Optionally, the plurality of supporting parts are arranged at intervals in sequence along the length direction of the substrate layer; the support part positioned at the outermost side extends beyond the light emitting assembly.
Through above-mentioned scheme, the supporting part has all been arranged to the both sides edge position of corresponding the length direction of luminous subassembly for the light that luminous subassembly side was emergent can be as much as possible by the reflection of supporting part, thereby further increase luminous subassembly's front emission light promotes the whole luminance of Micro LED chip.
Optionally, the lateral dimension of the substrate layer is greater than the lateral dimension of the light emitting assembly.
Through the scheme, the reflection range of the substrate layer is enlarged, so that the light rays with large angles emitted from the bottom surface of the light-emitting component can be reflected by the substrate layer to the front surface of the light-emitting component, and meanwhile, the substrate layer can receive and reflect part of the light rays emitted from the side surface of the light-emitting component, the light rays emitted from the front surface of the light-emitting component are further increased, and the overall light-emitting brightness of the Micro LED chip is improved.
Optionally, the support portion and the substrate layer are integrally formed.
Through the scheme, the stability of connection between the supporting part and the substrate layer can be ensured, so that the supporting effect of the supporting part is ensured, and the displacement of the light-emitting component caused by the fact that the supporting part is inclined relative to the substrate layer due to the action of external force is avoided.
Optionally, the metal electrode comprises a Cr-Al-Cu composite metal electrode.
Through the scheme, reflection of light is achieved through two metal components of Cr and Al in the metal electrode, meanwhile, accumulation of the whole thickness of the metal electrode can be achieved through the Cu material, and therefore the light-emitting assembly is lifted relative to the PCB, and is in a suspended state relative to the PCB.
Optionally, the light emitting assembly includes:
an epitaxial wafer;
the conductive film layer is arranged between the epitaxial wafer and the metal electrode, and the metal electrode is electrically connected with the epitaxial wafer through the conductive film layer;
and the PAD electrode is arranged on one surface of the epitaxial wafer, which is far away from the conductive film layer.
Through the scheme, the PAD electrode can be used as a bonding PAD to encapsulate the light emitting component.
Optionally, the PAD electrode includes a Cr-Pt-Au complex metal layer or a Cr-Pt-Sn complex metal layer.
A driving back plate, the driving back plate is provided with a plurality of metal bonding pads, and the metal bonding pads are used for bonding connection with the suspended Micro LED chip.
The display screen comprises the driving backboard and the packaging substrate, wherein the driving backboard and the packaging substrate are fixed through glue packaging.
According to the utility model, the metal electrode supports the light-emitting component from the bottom of the light-emitting component, so that the gap is reserved in the bottom direction of the light-emitting component, the light-emitting component is in a suspended state relative to the PCB, and emergent light rays in the bottom direction of the light-emitting component are increased; meanwhile, the metal electrode can reflect light, so that the light emitted from the bottom surface direction of the light-emitting component is reflected to the front surface of the light-emitting component, the light emitted from the front surface of the light-emitting component is increased, and the overall light-emitting brightness of the Micro LED chip is improved.
Drawings
FIG. 1 is a schematic view of a structure of a sapphire substrate attached to a surface of a light emitting component according to the present utility model;
FIG. 2 is a schematic view showing a state after silicon oxide is deposited on the bottom surface of the conductive film layer in the present utility model;
FIG. 3 is a schematic view showing a state in which a silicon oxide pattern corresponds to the first embodiment in the present utility model;
FIG. 4 is a schematic view showing a state in which a silicon oxide pattern corresponds to the second embodiment of the present utility model;
fig. 5 (a) is a schematic view showing a state of the utility model after metal electrodes are vapor-deposited on the surface of the silicon oxide pattern corresponding to the first embodiment;
fig. 5 (b) is a schematic view showing a state of the metal electrode after vapor deposition on the surface of the silicon oxide pattern according to the second embodiment of the present utility model;
fig. 6 (a) is a schematic view of the state of the utility model after removing the sapphire substrate in the first embodiment;
fig. 6 (b) is a schematic view of the state of the utility model after removing the sapphire substrate in the second embodiment;
fig. 7 (a) is a schematic diagram of a state of the light emitting device according to the first embodiment after the side surface of the light emitting device is etched to the metal electrode;
fig. 7 (b) is a schematic diagram of a state of the light emitting device according to the second embodiment after the side surface of the light emitting device is etched to the metal electrode;
FIG. 8 (a) is a schematic view showing a state after the silicon oxide is etched in accordance with the first embodiment of the present utility model;
FIG. 8 (b) is a schematic view showing a state after the silicon oxide is etched in accordance with the second embodiment of the present utility model;
fig. 9 is a schematic structural diagram of a suspended Micro LED chip according to a first embodiment of the present utility model;
FIG. 10 is a schematic diagram of a suspended Micro LED chip according to a second embodiment of the present utility model;
FIG. 11 is a schematic view of the structure of the driving back plate according to the present utility model;
fig. 12 is a schematic structural view of a display screen according to the present utility model.
Reference numerals illustrate:
10-a light emitting assembly; 1-an epitaxial wafer; 11-N-type gallium nitride base layer; 12-MQW quantum well layer; 13-P-type gallium nitride base layer; 2-a conductive film layer; a 3-sapphire substrate; 4-metal electrodes; 41-a substrate layer; 42-a support; a 5-PAD electrode; 20-silicon oxide; 30-avoiding gaps; 100-gap; 200-driving a backboard; 201-metal pads; 300-packaging the substrate.
Detailed Description
In order to make the objects, technical solutions and advantages of the present utility model more clear and clear, the present utility model will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the utility model.
The utility model provides a suspended Micro LED chip, as shown in fig. 9 and 10, which comprises a light-emitting component 10 and a metal electrode 4, wherein the metal electrode 4 is arranged on the bottom surface of the light-emitting component 10; the bottom surface of the light emitting assembly 10 is a surface of the light emitting assembly 10 for bonding with a driving back plate. The metal electrode 4 is used for being assembled with the PCB board so as to support the light emitting assembly 10 and space the light emitting assembly 10 from the PCB board.
The metal electrode 4 comprises a substrate layer 41 and at least one support 42; the substrate layer 41 is arranged opposite to the bottom surface of the light emitting component 10, and a gap 100 is formed between the substrate layer and the light emitting component 10; the support portion 42 is located in the gap 100 and is connected to the substrate layer 41 and the light emitting assembly 10, respectively.
Specifically, the substrate layer 41 is assembled with the PCB, and the supporting portion 42 supports the light emitting assembly 10, so that the light emitting assembly 10 is positioned above the substrate layer 41, and the gap 100 is reserved in the bottom surface direction of the light emitting assembly 10, so that the light emitting assembly 10 is in a suspended state relative to the PCB, and outgoing light in the bottom surface direction of the light emitting assembly 10 is increased. Meanwhile, the metal electrode 4 can reflect light, so that the light emitted from the bottom surface direction of the light emitting component 10 is reflected to the front surface of the light emitting component 10, the light emitted from the front surface of the light emitting component 10 is increased, and the overall light emitting brightness of the Micro LED chip is improved.
In an embodiment of the present utility model, the lateral dimension of the substrate layer 41 is greater than the lateral dimension of the light emitting component 10, so that the lateral edge of the substrate layer 41 exceeds the lateral edge of the light emitting component 10, thereby enlarging the reflection range of the substrate layer 41, so that the light with a large angle emitted from the bottom surface of the light emitting component 10 can be reflected by the substrate layer 41 to the front surface of the light emitting component 10, and the substrate layer 41 can receive and reflect part of the light emitted from the side surface of the light emitting component 10, further increasing the light emitted from the front surface of the light emitting component 10, and improving the overall light emitting brightness of the Micro LED chip.
In one embodiment of the present utility model, the metal electrode 4 includes a cr—al—cu composite metal electrode 4.
In this embodiment, the metal electrode 4 mainly reflects light by two metal components, cr (chromium) and Al (aluminum); and the accumulation of the whole thickness of the metal electrode 4 is realized through Cu (copper) materials, so that the light-emitting component 10 is lifted relative to the PCB, and the light-emitting component 10 is in a suspended state relative to the PCB.
In the first embodiment of the present utility model, as shown in fig. 9, the number of the supporting parts 42 is only one, and the supporting parts 42 correspond to the center position of the substrate layer 41 and the center position of the light emitting module 10, respectively. Specifically, one end of the supporting portion 42 is connected to the center of the front surface of the substrate layer 41, and the other end is connected to the center of the bottom surface of the light emitting module 10.
The supporting parts 42 connect the substrate 41 with the light emitting assembly 10 from the central positions of the substrate 41 and the light emitting assembly 10, so that the number of the supporting parts 42 is minimized while the light emitting assembly 10 is stably supported, and the volume of the gap 100 is maximized, thereby ensuring that the light emitted from the bottom surface direction of the light emitting assembly 10 can be reflected by the substrate 41 toward the front surface as much as possible.
In the second embodiment of the present utility model, as shown in fig. 10, the plurality of support portions 42 are provided, and the plurality of support portions 42 are sequentially arranged at intervals along the length direction of the substrate layer 41; the support 42 located at the outermost side partially extends beyond the light emitting assembly 10.
Specifically, along the length direction of the substrate layer 41, for two support portions 42 located at the outermost sides, a portion of the two support portions exceeds the edge of the light emitting component 10, so that the support portions 42 are correspondingly disposed at two side edge portions of the light emitting component 10 in the length direction, and as much light emitted from the side surface of the light emitting component 10 as possible can be reflected by the support portions 42, so that the light emitted from the front surface of the light emitting component 10 is further increased, and the overall light emitting brightness of the Micro LED chip is improved.
In an embodiment of the present utility model, the supporting portion 42 and the substrate layer 41 are integrally formed, so as to ensure stability of connection between the supporting portion 42 and the substrate layer 41, thereby ensuring supporting effect of the supporting portion 42 and avoiding displacement of the light emitting assembly 10 caused by deflection of the supporting portion 42 relative to the substrate layer 41 due to external force.
The light-emitting component 10 comprises an epitaxial wafer 1, a conductive film layer 2 and a PAD electrode 5; the conductive film layer 2 is disposed between the epitaxial wafer 1 and the metal electrode 4, and the metal electrode 4 is electrically connected with the epitaxial wafer 1 through the conductive film layer 2. Specifically, the supporting portion 42 is connected to the conductive film layer 2.
The PAD electrode 5 is disposed on a surface of the epitaxial wafer 1 away from the conductive film layer 2. The PAD electrode 5 may be used as a PAD in the present utility model to encapsulate the light emitting assembly 10.
In an embodiment of the present utility model, the conductive film layer 2 is an ITO (indium tin oxide) conductive film layer.
In one embodiment of the present utility model, the PAD electrode 5 includes a Cr (chromium) -Pt (platinum) -Au (gold) composite metal layer or a Cr (chromium) -Pt (platinum) -Sn (tin) composite metal layer.
In one implementation manner of this embodiment, the outermost layer of the PAD electrode 5 (i.e., the surface of the PAD electrode 5 away from the light emitting component 10) is configured as an Au layer or an Sn layer, so as to improve the stability of the attachment between the PAD electrode 5 and other parts.
The epitaxial wafer 1 comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer; the first semiconductor layer is an N-type gallium nitride base layer 11; the light-emitting layer is an MQW quantum well layer 12, and the MQW quantum well layer 12 is arranged on the bottom surface of the N-type gallium nitride base layer 11; the second semiconductor layer is a P-type gallium nitride base layer 13, and the P-type gallium nitride base layer 13 is disposed on the bottom surface of the MQW quantum well layer 12 and is connected with the conductive film layer 2.
The utility model also provides a driving backboard, as shown in fig. 11, the driving backboard 200 is provided with a plurality of metal bonding pads 201, and the metal bonding pads 201 are used for being in one-to-one correspondence and bonding connection with the suspended Micro LED chips as described in any one of the above.
The utility model also provides a display screen, as shown in fig. 12, which comprises the driving backboard 200 and the packaging substrate 300, wherein the driving backboard 200 and the packaging substrate 300 are packaged and fixed by a glue material.
Based on the above embodiments, the preparation method of the suspended Micro LED chip of the present utility model includes the following steps:
s100, providing a light-emitting component;
specifically, as shown in fig. 1, an epitaxial wafer 1 is provided, wherein a sapphire substrate 3 is attached to the front surface of the epitaxial wafer 1, and a conductive film layer 2 is attached to the bottom surface of the epitaxial wafer 1.
S200, depositing a silicon oxide coating on the bottom surface of the light-emitting component;
specifically, as shown in fig. 2, silicon oxide 20 is deposited on the side of the conductive film layer 2 away from the epitaxial wafer 1.
S300, photoetching a silicon oxide pattern on the silicon oxide coating according to the number and the shape of the supporting parts, and etching and photoresist removing the silicon oxide coating to obtain the silicon oxide pattern;
in this step, as shown in fig. 1 and 3, corresponding to the first embodiment, the silicon oxide pattern is: a void space 30 is arranged only at the position of the silicon oxide 20 corresponding to the center of the epitaxial wafer 1, and the conductive film layer 2 is exposed at the void space 30; the clearance space is used to form a support. Corresponding to the second embodiment described above, as shown in fig. 1 and 4, the silicon oxide pattern is: a plurality of avoidance holes 30 are sequentially arranged on the silicon oxide 20 at intervals along the length direction of the epitaxial wafer 1, and the two avoidance holes respectively correspond to the edges of the two ends of the length direction of the epitaxial wafer; each of the avoidance spaces exposes the conductive film layer 2, and the plurality of avoidance spaces 30 are used to form a plurality of support portions.
S400, performing metal evaporation on the silicon oxide pattern to obtain a metal pattern covering the silicon oxide pattern, thereby obtaining a metal electrode;
specifically, as shown in fig. 5, metal vapor deposition is performed on the silicon oxide pattern, the silicon oxide pattern is covered with the metal, and the void is filled up, whereby a support portion 42 is formed at the void, a substrate layer 41 is formed on the surface of the silicon oxide 20, and finally a metal electrode 4 composed of the substrate layer 41 and the support portion 42 is formed.
S500, peeling the sapphire substrate, then dry etching the N-type gallium nitride base layer to a current conducting layer, and etching the whole light-emitting assembly along the side surface so as to enable the side surface edge of the whole light-emitting assembly to shrink inwards relative to the metal electrode; corresponding to the first embodiment, silicon oxide is etched to form metal electrodes along the side of the light emitting component;
specifically, the sapphire substrate 3 on the front side of the epitaxial wafer is peeled off to obtain a chip structure shown in fig. 6; the N-type gallium nitride based layer is then dry etched to the current conducting layer and the entire light emitting assembly 10 is etched along the sides so that the side edges of the entire light emitting assembly 10 shrink inwardly with respect to the metal electrode 4.
As shown in fig. 7 (a), corresponding to the first embodiment described above, silicon oxide 20 is etched to the metal electrode 4 along the side of the light emitting element 10; as shown in fig. 7 (b), corresponding to the second embodiment described above, since the edge of the light emitting element 10 exceeds the silicon oxide 20, it is sufficient to etch to the support portion 42 of the metal electrode 4 along the side surface of the light emitting element 10.
S600, corroding silicon oxide by using a BOE solution (buffer oxide etching solution) so as to form a gap at the silicon oxide between the metal electrode and the conductive film layer;
specifically, as shown in fig. 8, silicon oxide between the metal electrode 4 and the conductive film layer 2 is etched using a BOE solution, so that a gap 100 is formed between the metal electrode 4 and the conductive film layer 2 at the silicon oxide, so that light of the bottom surface of the light emitting element 10 is directed to the metal electrode 4 through the gap 100.
S700, photoetching a PAD pattern on the front surface of an N-type gallium nitride base layer, evaporating metal at the PAD pattern, and stripping gold and photoresist to obtain a PAD electrode;
specifically, as shown in fig. 9 and fig. 10, a PAD pattern is photoetched on one surface of the N-type gallium nitride base layer, which is far away from the MQW quantum well layer, and metal is evaporated at the PAD pattern, and gold stripping and photoresist stripping are performed to obtain the PAD electrode 5.
In summary, the utility model provides a suspended Micro LED chip, a driving back plate and a display screen, wherein the substrate layer is assembled with the PCB, the supporting portion supports the light emitting component, so that the light emitting component is positioned above the substrate layer, and the gap is reserved in the bottom surface direction of the light emitting component, so that the light emitting component is in a suspended state relative to the PCB, and the emergent light in the bottom surface direction of the light emitting component is increased. Meanwhile, the metal electrode can reflect light, so that the light emitted from the bottom surface direction of the light-emitting component is reflected to the front surface of the light-emitting component, the light emitted from the front surface of the light-emitting component is increased, and the overall light-emitting brightness of the Micro LED chip is improved. It is to be understood that the utility model is not limited in its application to the examples described above, but is capable of modification and variation in light of the above teachings by those skilled in the art, and that all such modifications and variations are intended to be included within the scope of the appended claims.
Claims (10)
1. A suspended Micro LED chip comprising a light emitting assembly, characterized in that it further comprises:
the metal electrode is arranged on the bottom surface of the light-emitting assembly, and the bottom surface of the light-emitting assembly is one surface for bonding with the driving backboard;
the metal electrode comprises a substrate layer and at least one support part; the substrate layer is arranged opposite to the bottom surface of the light-emitting component, and a gap is formed between the substrate layer and the light-emitting component; the supporting part is positioned in the gap and is respectively connected with the substrate layer and the light-emitting component.
2. The suspended Micro LED chip according to claim 1, wherein the number of the supporting parts is one, and both ends of the supporting parts are respectively connected with the center of the front surface of the substrate layer and the center of the bottom surface of the light emitting assembly; the front surface of the substrate layer is one surface of the substrate layer which is arranged opposite to the bottom surface of the light-emitting component.
3. The suspended Micro LED chip of claim 1, wherein the plurality of support parts are sequentially arranged at intervals along the length direction of the substrate layer; the support portion located at the outermost side is beyond the bottom surface of the light emitting assembly.
4. The suspended Micro LED chip of claim 1, wherein the lateral dimension of the substrate layer is greater than the lateral dimension of the light emitting assembly.
5. The suspended Micro LED chip of claim 1, wherein the support and the substrate layer are integrally formed.
6. The suspended Micro LED chip of any one of claims 1-5, wherein the metal electrode comprises a Cr-Al-Cu composite metal electrode.
7. The suspended Micro LED chip of claim 1, wherein the light emitting assembly comprises:
an epitaxial wafer;
the conductive film layer is arranged between the epitaxial wafer and the metal electrode, and the metal electrode is electrically connected with the epitaxial wafer through the conductive film layer;
and the PAD electrode is arranged on one surface of the epitaxial wafer, which is far away from the conductive film layer.
8. The suspended Micro LED chip of claim 7, wherein the PAD electrode comprises a Cr-Pt-Au complex metal layer or a Cr-Pt-Sn complex metal layer.
9. A driving back plate, characterized in that the driving back plate is provided with a plurality of metal bonding pads, and the metal bonding pads are used for bonding connection with the suspended Micro LED chip according to any one of claims 1-8.
10. A display screen, characterized in that the display screen comprises the driving backboard according to claim 9 and a packaging substrate, wherein the driving backboard and the packaging substrate are fixed through glue packaging.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320533944.XU CN219959030U (en) | 2023-03-17 | 2023-03-17 | Suspension type Micro LED chip, drive backplate and display screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320533944.XU CN219959030U (en) | 2023-03-17 | 2023-03-17 | Suspension type Micro LED chip, drive backplate and display screen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219959030U true CN219959030U (en) | 2023-11-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320533944.XU Active CN219959030U (en) | 2023-03-17 | 2023-03-17 | Suspension type Micro LED chip, drive backplate and display screen |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219959030U (en) |
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2023
- 2023-03-17 CN CN202320533944.XU patent/CN219959030U/en active Active
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