CN219937344U - E-band wide-bandwidth low-insertion-loss SIW transition waveguide transition structure - Google Patents
E-band wide-bandwidth low-insertion-loss SIW transition waveguide transition structure Download PDFInfo
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- CN219937344U CN219937344U CN202321050310.5U CN202321050310U CN219937344U CN 219937344 U CN219937344 U CN 219937344U CN 202321050310 U CN202321050310 U CN 202321050310U CN 219937344 U CN219937344 U CN 219937344U
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- 230000007704 transition Effects 0.000 title claims abstract description 59
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Abstract
The utility model discloses an E-band wide-bandwidth low-insertion-loss SIW transition waveguide transition structure, which comprises a top layer, a middle layer and a bottom layer which are sequentially laminated from top to bottom, wherein each layer is provided with a metallized through hole array, microstrip lines are arranged in an area surrounded by the metallized through hole array of the top layer, a coupling window for the E-band is arranged in an area surrounded by the metallized through hole array of the bottom layer, and a copper sheet debugging and matching structure is arranged in the coupling window. The transition structure of the utility model uses a double-layer plate technology, has simple design and processing method and low cost, the frequency range covers most E wave bands, and the insertion loss can reach within-0.9 dB.
Description
Technical Field
The utility model relates to the technical field of waveguides, in particular to an E-band wide-bandwidth low-insertion-loss SIW transition waveguide transition structure.
Background
SIW is a three-dimensional periodic structure proposed based on the idea of integrating a waveguide structure, and electromagnetic waves are limited to radiate outwards through array metal through holes to replace the traditional rectangular metal waveguide. However, as the frequency of use increases, the loss of transmission and the Q value (quality factor) are affected more and more, so many microwave components are still designed and manufactured in the form of waveguides. In order to connect a microstrip circuit with a waveguide-form device or circuit, a SIW-waveguide transition structure is designed.
The development of the current radio frequency technology puts higher requirements on the design of the coplanar waveguide to the waveguide: the simulation design technology is continuously improved and optimized, but with the increase of frequency, low loss and low cost are still a bottleneck. From a bandwidth perspective, existing techniques based on SIW-waveguide transition have not yet been ranging over most of the E-band. From a technological point of view, most of the transitions in life today are in the form of probe coupling, and a small portion are in the LGA multilayer board technology. Although a wider frequency range can be achieved, the cost is high, the process is complex, and certain disadvantages exist for the requirements of mass production and simple assembly of products.
Disclosure of Invention
The utility model aims to solve the problems of the existing SIW transition structure, and provides an E-band wide-bandwidth low-insertion-loss SIW transition structure, which adopts a double-layer plate technology, has simple design and processing methods and low cost, and the frequency range covers most E-band, and the insertion loss can be within-0.9 dB.
The aim of the utility model is realized by the following technical scheme:
the utility model provides a broadband low insertion loss SIW switching waveguide transition structure of E wave band, includes top layer, intermediate level and the bottom of from last to stacking gradually down, and every layer all is equipped with the metallized through-hole array, wherein, be provided with the microstrip line in the region that the metallized through-hole array of top layer encloses, be provided with the coupling window that is used for the E wave band in the region that the metallized through-hole array of bottom encloses, be provided with copper sheet debugging matching structure in the coupling window.
As a preferred option, the E-band wide-bandwidth low-insertion-loss SIW transition waveguide transition structure is characterized in that the top layer and the bottom layer are copper layers.
As a preferred option, the E-band wide-bandwidth low-insertion-loss SIW transition waveguide transition structure is characterized in that the middle layer is a printed board of Rogers 3003.
As a preferred option, the E-band wide-bandwidth low-insertion-loss SIW transition waveguide transition structure is characterized in that the thickness of the middle layer is 0.254mm, the dielectric constant is 3.00+/-0.04, and the loss tangent angle is 0.001.
As a preferred option, the E-band wide-bandwidth low-insertion-loss SIW transition waveguide transition structure is characterized in that the bottom layer is connected with a waveguide through a coupling window.
As a preferred option, the E-band wide-bandwidth low-insertion-loss SIW transition waveguide transition structure is characterized in that the waveguide is a WR-12 standard waveguide.
As a preferred option, the diameter of the through holes in the metallized through hole array is 0.2mm.
As a preferred option, the E-band wide-bandwidth low-insertion-loss SIW transition waveguide transition structure comprises a microstrip line with the length of 3.14mm and the width of 0.4mm.
As a preferred option, the E-band wide-bandwidth low-insertion-loss SIW transition waveguide transition structure is characterized in that the length of the coupling window is 2.9mm, and the width of the coupling window is 0.55mm.
As a preferred option, the E-band wide-bandwidth low-insertion-loss SIW transition waveguide transition structure is characterized in that the copper sheet debugging matching structure is a groove type.
It should be further noted that the technical features corresponding to the above options may be combined with each other or replaced to form a new technical scheme without collision.
Compared with the prior art, the utility model has the beneficial effects that:
(1) The transition structure prevents signal dissipation through the metallized through hole array, the regular arrangement of the through holes can prevent the signal from leaking out through the inter-hole spacing, the signal integrity is ensured under certain conditions, the length of the top microstrip line and the ground spacing influence the standing wave of the transmitted signal, and the bottom coupling window is provided with a copper sheet debugging matching structure which influences the frequency range and the center frequency point. The double-layer plate technology is used, the design and processing method is simple, the cost is low, the frequency range covers most E wave bands, the standing wave and the insertion loss characteristics are good, and the insertion loss can be within-0.9 dB.
(2) Simulation results show that the reflection coefficient of the transition structure is smaller than-10 dB at 2 ports in the frequency range of 74-87 GHz, the minimum insertion loss is 0.44dB, and the maximum insertion loss is 0.8dB, so that good standing wave and insertion loss characteristics are obtained.
(3) The number of layers of the used organic plate is less, the processing technology is relatively simple, and the cost is lower. And the plate material is harder, and is less prone to damage during use. In addition, based on the PCB process, the packaging device, the radio frequency circuit and the like have good compatibility, and have important significance for a high-frequency integrated system.
Drawings
Fig. 1 is an overall schematic diagram of an E-band wide bandwidth low insertion loss SIW transition waveguide transition structure according to an embodiment of the present utility model;
FIG. 2 is a side view of a waveguide transition structure shown in an embodiment of the present utility model;
FIG. 3 is a top-level schematic view of a waveguide transition structure according to an embodiment of the present utility model;
FIG. 4 is a schematic diagram of an intermediate layer structure of a waveguide transition structure according to an embodiment of the present utility model;
FIG. 5 is a schematic view of the underlying structure of a waveguide transition structure according to an embodiment of the present utility model;
FIG. 6 is a top layer dimension schematic as shown in an embodiment of the present utility model:
FIG. 7 is a schematic illustration of the dimensions of the bottom layer shown in an embodiment of the present utility model;
fig. 8 is a schematic diagram of S-parameter simulation in accordance with an embodiment of the present utility model.
Reference numerals in the drawings: 1. a top layer; 2. an intermediate layer; 3. a bottom layer; 4. an array of metallized vias; 11. a microstrip line; 5. a coupling window; 51. copper sheet debugging and matching structure; 6. a waveguide.
Detailed Description
The following description of the embodiments of the present utility model will be made apparent and fully understood from the accompanying drawings, in which some, but not all embodiments of the utility model are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
In the description of the present utility model, it should be noted that directions or positional relationships indicated as being "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are directions or positional relationships described based on the drawings are merely for convenience of describing the present utility model and simplifying the description, and do not indicate or imply that the apparatus or elements to be referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present utility model.
In the description of the present utility model, it should be noted that, unless explicitly specified and limited otherwise, terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present utility model described below may be combined with each other as long as they do not collide with each other.
Referring to fig. 1-5, in an exemplary embodiment, an E-band wide bandwidth low insertion loss SIW waveguide transition structure is provided, which includes a top layer 1, a middle layer 2 and a bottom layer 3 stacked in sequence from top to bottom, each layer is provided with a metallized through hole array 4, wherein a microstrip line 11 is disposed in a region surrounded by the metallized through hole array of the top layer 1, a coupling window 5 for the E-band is disposed in a region surrounded by the metallized through hole array of the bottom layer 3, and a copper sheet debugging matching structure 51 is disposed in the coupling window 5.
Specifically, referring to fig. 1-2, the principle of the structure is that the top layer performs signal transmission in the form of SIW, and when the signal is transmitted to the area surrounded by the through holes, the signal is output through the area without copper sheet at the bottom, namely, the coupling window 5. In the transmission process, the through holes play a role in preventing signal dissipation, and specifically, the regular arrangement of the through holes can prevent signals from leaking out through the inter-hole spacing, so that the signal integrity is ensured under certain conditions, and the length of the top-layer strip line and the ground spacing influence the standing wave of the transmission signals. And a regular copper sheet is added in the copper-free area of the bottom layer for matching, so that the frequency range and the center frequency point are affected.
Further, fig. 3-5 are transmission simulation design diagrams built based on the principle. As can be seen from the figure, the design is composed of two copper sheets and 1 dielectric sheet (middle layer 2), the printed board of Rogers3003 is selected as the sheet, the thickness is 0.254mm, the dielectric constant is 3.00+/-0.04, and the loss tangent angle is 0.001, so that the ceramic-filled PTFE composite/laminated board is used for commercial microwave and radio frequency application, and has higher maturity and reliability.
Further, since the transition structure is mainly used for the E band, the other end of the transition structure is provided with a WR-12 standard waveguide interface so as to be convenient for connection with the existing commercial waveguide.
Further, referring to fig. 6-7, in the overall design dimensions, metal vias with a diameter d_via=0.2 mm are placed, copper is plated to connect the top layer 1 and the bottom layer 3, and it is noted that if the metallized via array 4 is too thin, i.e. the distance between two vias is too large, electromagnetic energy leakage may result, and the aperture and the hole distance are interrelated, so in practical design, the process is usually combined, so the metallized via size and the distance arrangement need to be simulated, and the irregular arrangement is obtained. In the top layer 1, the distance w_s=0.2 mm between the microstrip line 11 and the ground, the microstrip line length l_t=3.14 mm, the microstrip line width w_t=0.4 mm, and the whole microstrip line end is connected to the ground.
In the bottom layer, firstly cutting a copper laying inhibition area of W_r and L_r, namely a signal coupling window 5, wherein the width W_r of the coupling window is=0.55 mm, the length L_r of the coupling window is=2.9 mm, and then adding a copper sheet debugging matching structure 51 in the signal coupling window 5 for debugging matching and connecting with the ground, wherein the copper sheet debugging matching structure 51 is a groove type, and the size of the copper sheet debugging matching structure 51 is as follows: a=0.2 mm, b=2.5 mm, c=1.05 mm, d=0.4 mm, e=0.2 mm, f=0.1 mm. In the design, the debugging of the copper sheet has decisive influence on the bandwidth, the center frequency point and the insertion loss, and in the design, whether the size is increased or reduced is judged according to the actual simulation result.
Further, fig. 8 shows the result of S parameter simulation after the structural design is completed, where the curve with the mark points m1 and m2 is S21, representing the insertion loss, the curve with the mark points m3 and m4 is S11, representing the input echo, and the curve without the mark points is S22, representing the output echo. Simulation results show that the reflection coefficient of the transition structure is smaller than-10 dB at 2 ports in the frequency range of 74-87 GHz, the minimum insertion loss is 0.44dB, and the maximum insertion loss is 0.8dB, so that good standing wave and insertion loss characteristics are obtained.
The waveguide transition structure replaces the transition structure of the traditional machining, and the machining process is simplified. According to simulation results, the transition structure has good port standing wave characteristics and low insertion loss in a frequency band used by the design, which shows that the design has good feasibility. The number of layers of the used organic plate is small, the processing technology is relatively simple, the cost is lower, the plate material is harder, and the plate is not easy to damage during use. In addition, the structure is based on the PCB process, so that the packaging device, the radio frequency circuit and the like have good compatibility, and have important significance for a high-frequency integrated system.
The foregoing detailed description of the utility model is provided for illustration, and it is not to be construed that the detailed description of the utility model is limited to only those illustration, but that several simple deductions and substitutions can be made by those skilled in the art without departing from the spirit of the utility model, and are to be considered as falling within the scope of the utility model.
Claims (10)
1. The utility model provides a broadband low insertion loss SIW switching waveguide transition structure of E wave band, its characterized in that, includes top layer, intermediate level and the bottom of range upon range of from top to bottom in proper order, and every layer all is equipped with the metallized through-hole array, wherein, be provided with the microstrip line in the region that the metallized through-hole array of top layer encloses, be provided with the coupling window that is used for the E wave band in the region that the metallized through-hole array of bottom encloses, be provided with copper sheet debugging matching structure in the coupling window.
2. The E-band wide bandwidth low insertion loss SIW transition waveguide transition structure of claim 1, wherein the top and bottom layers are copper layers.
3. The E-band wide bandwidth low insertion loss SIW transit waveguide transition structure of claim 1, wherein the intermediate layer is a printed board of Rogers 3003.
4. The E-band wide bandwidth low insertion loss SIW transition waveguide transition structure of claim 3, wherein the thickness of the intermediate layer is 0.254mm, the dielectric constant is 3.00 ± 0.04, and the loss tangent angle is 0.001.
5. The E-band wide bandwidth low insertion loss SIW transit waveguide transition structure of claim 1, wherein the bottom layer is connected to the waveguide through a coupling window.
6. The E-band wide bandwidth low insertion loss SIW transit waveguide transition structure of claim 5, wherein said waveguide is a WR-12 standard waveguide.
7. The E-band wide bandwidth low insertion loss SIW transit waveguide transition structure of claim 1, wherein the diameter of the vias in the metallized via array is 0.2mm.
8. The E-band wide bandwidth low insertion loss SIW transit waveguide transition structure of claim 1, wherein the length of the microstrip line is 3.14mm, and the width of the microstrip line is 0.4mm.
9. The E-band wide bandwidth low insertion loss SIW transit waveguide transition structure of claim 1, wherein the coupling window has a length of 2.9mm and a width of 0.55mm.
10. The E-band wide bandwidth low insertion loss SIW transition waveguide transition structure of claim 1, wherein the copper skin debug matching structure is a groove type.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202321050310.5U CN219937344U (en) | 2023-05-05 | 2023-05-05 | E-band wide-bandwidth low-insertion-loss SIW transition waveguide transition structure |
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| CN202321050310.5U CN219937344U (en) | 2023-05-05 | 2023-05-05 | E-band wide-bandwidth low-insertion-loss SIW transition waveguide transition structure |
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| CN202321050310.5U Active CN219937344U (en) | 2023-05-05 | 2023-05-05 | E-band wide-bandwidth low-insertion-loss SIW transition waveguide transition structure |
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- 2023-05-05 CN CN202321050310.5U patent/CN219937344U/en active Active
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