CN219925631U - Monocrystalline silicon sample wafer burnishing device - Google Patents
Monocrystalline silicon sample wafer burnishing device Download PDFInfo
- Publication number
- CN219925631U CN219925631U CN202321234940.8U CN202321234940U CN219925631U CN 219925631 U CN219925631 U CN 219925631U CN 202321234940 U CN202321234940 U CN 202321234940U CN 219925631 U CN219925631 U CN 219925631U
- Authority
- CN
- China
- Prior art keywords
- chute
- polishing
- monocrystalline silicon
- fixedly connected
- sliding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 91
- 238000005498 polishing Methods 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims description 19
- 230000008093 supporting effect Effects 0.000 claims description 19
- 238000007789 sealing Methods 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 239000013078 crystal Substances 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 235000012431 wafers Nutrition 0.000 abstract description 68
- 230000000694 effects Effects 0.000 abstract description 44
- 238000001179 sorption measurement Methods 0.000 abstract description 16
- 230000006378 damage Effects 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 description 12
- 239000000428 dust Substances 0.000 description 4
- 210000003437 trachea Anatomy 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The utility model belongs to the technical field of monocrystalline silicon wafers, in particular to a monocrystalline silicon sample wafer polishing device, which comprises a polishing box; a telescopic rod is fixedly connected to the bottom of the interior of the polishing box; the output end of the telescopic rod is provided with a sucker; the top of the inside of the polishing box is connected with a sliding rod in a sliding manner; the middle part of the sliding rod is connected with a positioning block in a sliding way; the bottom end of the positioning block is rotationally connected with a polishing wheel; a bearing plate is fixedly connected to the middle part of the inner side wall of the polishing box; through the adsorption effect that utilizes the sucking disc, can reduce when using the anchor clamps to fix, the anchor clamps lead to the fact the destruction to monocrystalline silicon sample wafer, simultaneously because of the sucking disc is located monocrystalline silicon sample wafer bottom, can reduce the shielding to monocrystalline silicon sample wafer lateral wall, improve polishing effect, reduce the shielding that leads to because of the anchor clamps, carry out follow-up secondary treatment.
Description
Technical Field
The utility model belongs to the technical field of monocrystalline silicon wafers, and particularly relates to a monocrystalline silicon sample wafer polishing device.
Background
The monocrystalline silicon sample wafer is a semiconductor material formed by monocrystalline wafers in the modern technology, has good high temperature resistance and radiation resistance, and is often used in the fields of solar power generation and semiconductor devices after being manufactured.
The monocrystalline silicon sample wafer is a monocrystalline silicon wafer experimental material, different purposes are realized through the composition of different materials, and when the monocrystalline silicon sample wafer is manufactured, the monocrystalline silicon sample wafer is often manufactured by pulling high-purity polycrystalline silicon in a monocrystalline furnace.
In use, after the existing monocrystalline silicon sample wafer is initially manufactured, the surface smoothness of the existing monocrystalline silicon sample wafer is poor, the light absorption efficiency can be affected, a polishing device is often adopted for polishing, the thickness of the monocrystalline silicon sample wafer is thinner and the monocrystalline silicon sample wafer is fragile, the damage to corners of the monocrystalline silicon sample wafer is caused by overlarge moment of a clamp in the process of clamping the monocrystalline silicon sample wafer by the clamp, and the use condition is affected.
Disclosure of Invention
In order to overcome the deficiencies of the prior art, at least one technical problem presented in the background art is solved.
The technical scheme adopted for solving the technical problems is as follows: the utility model relates to a monocrystalline silicon sample wafer polishing device, which comprises a polishing box; a telescopic rod is fixedly connected to the bottom of the interior of the polishing box; the output end of the telescopic rod is provided with a sucker; the top of the inside of the polishing box is connected with a sliding rod in a sliding manner; the middle part of the sliding rod is connected with a positioning block in a sliding way; the bottom end of the positioning block is rotationally connected with a polishing wheel; a bearing plate is fixedly connected to the middle part of the inner side wall of the polishing box; during operation, the adsorption effect of the sucker is utilized in the step, damage to the monocrystalline silicon sample wafer caused by the clamp when the clamp is used for fixing can be reduced, shielding to the side wall of the monocrystalline silicon sample wafer can be reduced because the sucker is positioned at the bottom of the monocrystalline silicon sample wafer, the polishing effect is improved, shielding caused by the clamp is reduced, and subsequent secondary treatment is performed.
Preferably, the side wall of the sucker is provided with a plurality of groups of first sliding grooves; a second chute is formed in the side wall of the first chute; a sealing plate is connected inside the second chute in a sliding way; the sealing plate is connected with the second chute through a spring; push plates are fixedly connected to the tops of the bearing plates below the plurality of groups of sealing plates; during operation, this step utilizes the supporting effect of propelling movement board, can dismantle the monocrystalline silicon sample wafer when the staff, produces the space through the promotion to the closing plate and makes the air get into, reduces the sucking disc and to the adsorption effect of monocrystalline silicon sample wafer, and the staff of being convenient for takes the monocrystalline silicon sample wafer, reduces that the sucking disc adsorption effect is great to lead to monocrystalline silicon sample wafer to adsorb compactly, causes the condition of taking the difficulty.
Preferably, the top of the telescopic rod is provided with a third chute; the sucker slides in the third chute; the inner side wall of the third chute is connected with a limiting ring block through a spring; a supporting rod is fixedly connected to the bottom of the third chute; the supporting rod penetrates through the bottom of the sucker; a positioning rod is fixedly connected with the middle part of the supporting rod; an air pipe is connected between the supporting rod and the positioning rod in a sliding way; the air pipe is connected with the supporting rod through a spring; during operation, the contact effect generated by the air pipe and the monocrystalline silicon sample wafer is utilized, internal gas can be discharged outwards through the top in the moving process, the bottom of the monocrystalline silicon sample wafer is blown, dust impurities existing on the bottom of the monocrystalline silicon sample wafer are cleaned, air leakage caused by the existence of impurities at the corners of the sucking disc is reduced, and the fixing effect of the monocrystalline silicon sample wafer is affected.
Preferably, the bottom of the bearing plate is fixedly connected with a pair of fourth sliding grooves; a plurality of groups of limiting balls are fixedly connected with the corresponding side walls of the fourth sliding chute and the bearing plate; an impact ball is arranged in a gap between the fourth chute and the bearing plate; an elastic belt is fixedly connected with the middle part of the collision ball; one end of the elastic belt is fixedly connected to the side wall of the telescopic rod, and the other end of the elastic belt is fixedly connected to the side wall of the fourth chute; during operation, the pulling effect that this step utilized the elastic belt to produce can drive the collision ball constantly and multiunit spacing ball to contact the collision, and vibrations can be produced to the effect of a pause that provides, loosens the impurity that exists on the joint board and is in, and the auxiliary staff cleans the impurity, reduces the piece that single crystal silicon sample wafer produced because of polishing in-process and adheres to and accept the board top.
Preferably, the bottom of the bearing plate is provided with a fifth chute above the plurality of groups of limit balls; a collision plate is connected inside the fifth chute in a sliding way; the fifth sliding chute is connected with the collision plate through a spring; the inner side wall of the fifth chute is positioned above the collision plate and is connected with a pair of clamping blocks through springs; during operation, the collision ball and the collision plate are contacted in the step, so that the collision plate and the clamping block can be pushed to contact, the collision ball is enabled to sequentially contact with the clamping block to generate a pause and vibration in the continuous moving process, impurities on the top of the bearing plate due to polishing are loosened and cleaned, and the follow-up staff can conveniently clean the ball.
Preferably, the top of the air pipe is fixedly connected with a rubber block, and the top of an air passage in the air pipe is obliquely arranged; during operation, the step utilizes the additional friction force provided by the rubber block, so that the fixing effect on the monocrystalline silicon sample wafer can be increased, the occurrence of sliding of the monocrystalline silicon sample wafer is reduced, and meanwhile, the inclined arrangement of the top of the air passage in the air pipe can guide air flow to blow to the bottom of the monocrystalline silicon sample wafer, so that the attachment of dust and impurities is reduced.
Preferably, the corresponding side walls of the pair of fourth sliding grooves are respectively and rotatably connected with rollers; the roller side walls are in contact with the elastic band. The rotatable effect of the roller is utilized, so that the friction effect generated between the elastic belt and the side wall of the fourth chute is reduced, the occurrence of fracture caused by friction between the elastic belt and the fourth chute is reduced, and the service life of the equipment is prolonged.
The beneficial effects of the utility model are as follows:
1. the utility model provides a monocrystalline silicon sample wafer polishing device, which can reduce damage to a monocrystalline silicon sample wafer caused by a clamp when the clamp is used for fixing by utilizing the adsorption effect of a sucker, and can reduce shielding of the side wall of the monocrystalline silicon sample wafer, improve the polishing effect and reduce shielding caused by the clamp for carrying out subsequent secondary treatment because the sucker is positioned at the bottom of the monocrystalline silicon sample wafer.
2. The utility model provides a monocrystalline silicon sample wafer polishing device, which can reduce the adsorption effect of a sucker on a monocrystalline silicon sample wafer by reducing the adsorption effect of the sucker on the monocrystalline silicon sample wafer by pushing a sealing plate to enable air to enter when a worker dismounts the monocrystalline silicon sample wafer by utilizing the supporting effect of a pushing plate, thereby being convenient for the worker to take the monocrystalline silicon sample wafer and reducing the situation that the sucker is difficult to take due to the fact that the adsorption effect of the sucker is larger and the adsorption of the monocrystalline silicon sample wafer is tighter.
Drawings
The accompanying drawings, which are included to provide a further understanding of the utility model and are incorporated in and constitute a part of this specification, illustrate embodiments of the utility model and together with the description serve to explain the utility model and do not constitute a limitation on the utility model. In the drawings:
FIG. 1 is a perspective view of the present utility model;
FIG. 2 is a schematic view of a structure of a receiving plate according to the present utility model;
FIG. 3 is a schematic view of a connecting band according to the present utility model;
fig. 4 is a schematic structural view of the suction cup of the present utility model.
Legend description:
1. polishing the box; 11. a telescopic rod; 12. a suction cup; 13. a slide bar; 14. a positioning block; 15. a polishing wheel; 16. a receiving plate; 2. a first chute; 21. a sealing plate; 22. a second chute; 23. a pushing plate; 3. a third chute; 31. a limiting ring block; 32. a support rod; 33. a positioning rod; 34. an air pipe; 4. a fourth chute; 41. a limit ball; 42. a pool ball; 43. an elastic belt; 5. a fifth chute; 51. a collision plate; 52. a clamping block; 6. a rubber block; 7. and a roller.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Referring to FIGS. 1-2, a single crystal silicon wafer polishing apparatus includes a polishing box 1; the bottom of the interior of the polishing box 1 is fixedly connected with a telescopic rod 11; the output end of the telescopic rod 11 is provided with a sucker 12; the top of the inside of the polishing box 1 is connected with a sliding rod 13 in a sliding manner; the middle part of the sliding rod 13 is connected with a positioning block 14 in a sliding way; the bottom end of the positioning block 14 is rotatably connected with a polishing wheel 15; the middle part of the inner side wall of the polishing box 1 is fixedly connected with a bearing plate 16; during operation, in the process of polishing a monocrystalline silicon sample wafer by a worker, the monocrystalline silicon sample wafer can be placed above the suction cup 12, gas between the suction cup 12 and the monocrystalline silicon sample wafer is discharged through the pressing effect, the suction cup 12 generates an adsorption effect on the monocrystalline silicon sample wafer, the position of the polishing wheel 15 is adjusted through the movability of the sliding rod 13 and the positioning block 14, the monocrystalline silicon sample wafer can be polished through the rotation of the polishing wheel 15, the adsorption effect of the suction cup 12 is utilized in the step, damage to the monocrystalline silicon sample wafer caused by the clamp when the clamp is used for fixing can be reduced, meanwhile, shielding to the side wall of the monocrystalline silicon sample wafer can be reduced because the suction cup 12 is positioned at the bottom of the monocrystalline silicon sample wafer, the polishing effect is improved, shielding caused by the clamp is reduced, and subsequent secondary treatment is performed.
Referring to fig. 1-4, a plurality of groups of first sliding grooves 2 are formed in the side wall of the sucker 12; a second chute 22 is formed on the side wall of the first chute 2; a sealing plate 21 is connected inside the second chute 22 in a sliding manner; the sealing plate 21 is connected with the second chute 22 through a spring; push plates 23 are fixedly connected to the tops of the receiving plates 16 below the plurality of groups of sealing plates 21; during operation, after polishing of monocrystalline silicon sample wafer one side is accomplished, the staff can drive sucking disc 12 through providing downward thrust to monocrystalline silicon sample wafer, thereby make push plate 23 top and the protruding deformation of closing plate 21 bottom, produce the promotion effect, make closing plate 21 get into inside runner 22 No. two, at this moment, the removal of closing plate 21 can produce the space, make air admission sucking disc 12 inside, lead to adsorption effect reduction, this step utilizes push plate 23's supporting effect, can be when the staff dismantles monocrystalline silicon sample wafer, through the promotion to closing plate 21 produce the space and make the air get into, reduce sucking disc 12 to monocrystalline silicon sample wafer's adsorption effect, be convenient for the staff to take monocrystalline silicon sample wafer, reduce sucking disc 12 adsorption strength great lead to monocrystalline silicon sample wafer to adsorb compactly, cause the circumstances of taking difficulty.
Referring to fig. 4, a third chute 3 is formed at the top of the telescopic rod 11; the sucker 12 slides in the third chute 3; the inner side wall of the third chute 3 is connected with a limiting ring block 31 through a spring; a supporting rod 32 is fixedly connected to the bottom of the third chute 3; the support rod 32 passes through the bottom of the sucker 12; a positioning rod 33 is fixedly connected to the middle part of the supporting rod 32; an air pipe 34 is slidably connected between the supporting rod 32 and the positioning rod 33; the air pipe 34 is connected with the supporting rod 32 through a spring; when the polishing of the monocrystalline silicon sample wafer is finished, after the downward pressure is applied to the sucker 12 by a worker, the elastic supporting effect of the limiting ring block 31 is smaller than that of the pressure and then can be contracted, so that the bottom of the sucker 12 can move in the third chute 3, meanwhile, when the monocrystalline silicon sample wafer is polished, the air pipe 34 can be contacted with the monocrystalline silicon sample wafer in advance, the air pipe 34 can generate a moving effect through the subsequent pressure application, at the moment, the space between the positioning rod 33 and the air pipe 34 is reduced, the internal gas can be discharged to the outside through the air passage inside the air pipe 34 and is contacted with the monocrystalline silicon sample wafer, the internal gas can be discharged to the outside through the top in the moving process, the bottom of the monocrystalline silicon sample wafer is blown, dust impurities existing on the bottom of the monocrystalline silicon sample wafer are cleaned, the air leakage caused by the existence of impurities at corners of the sucker 12 is reduced, and the fixing effect of the monocrystalline silicon sample wafer is influenced.
Referring to fig. 2-3, a pair of fourth sliding grooves 4 are fixedly connected to the bottom of the receiving plate 16; a plurality of groups of limiting balls 41 are fixedly connected to the corresponding side walls of the fourth sliding chute 4 and the bearing plate 16; an impact ball 42 is arranged in a gap between the fourth chute 4 and the bearing plate 16; an elastic belt 43 is fixedly connected to the middle part of the collision ball 42; one end of the elastic belt 43 is fixedly connected to the side wall of the telescopic rod 11, and the other end of the elastic belt is fixedly connected to the side wall of the fourth chute 4; during operation, in the process that the telescopic rod 11 moves up and down, the movement of the telescopic rod 11 can produce a pulling effect on the elastic belt 43, so that the elastic belt 43 is driven to move, at the moment, the collision balls 42 positioned on the elastic belt 43 can displace among the plurality of groups of limit balls 41, continuously contact with the plurality of groups of limit balls 41, so that the collision balls can obtain a pause effect in the moving process, the step can drive the collision balls 42 to continuously contact and collide with the plurality of groups of limit balls 41 by utilizing the pulling effect produced by the elastic belt 43, the provided pause effect can produce vibration, the impurity existing on the bearing plate 16 is loosened, the worker is assisted to clean the impurity, and the phenomenon that scraps produced in the polishing process of a monocrystalline silicon sample are attached to the top of the bearing plate 16 is reduced.
Referring to fig. 2-3, a fifth chute 5 is formed at the bottom of the receiving plate 16 above the plurality of sets of limiting balls 41; the fifth chute 5 is internally and slidably connected with a collision plate 51; the fifth chute 5 is connected with the collision plate 51 through a spring; the inner side wall of the fifth chute 5 is positioned above the collision plate 51 and is connected with a pair of clamping blocks 52 through springs; during operation, in the process that the telescopic rod 11 moves up and down to drive the elastic belt 43 to displace, the impact ball 42 contacts with the bottom of the impact plate 51 when passing through the limit ball 41, an upward pushing effect is generated on the top of the impact plate 51, the impact plate 51 contacts with the clamping block 52 to generate a bump reaction, the impact plate 51 and the clamping block 52 can be pushed to contact by utilizing the contact of the impact ball 42 and the impact plate 51, so that a plurality of groups of impact plates 51 sequentially contact with the clamping block 52 to generate bump and vibration in the continuous moving process of the impact ball 42, and impurities on the top of the impact plate 16 due to polishing are loosened and cleaned, so that the follow-up staff can conveniently clean.
Referring to fig. 4, a rubber block 6 is fixedly connected to the top of the air pipe 34, and the top of the air passage inside the air pipe 34 is inclined; during operation, in the process that trachea 34 and monocrystalline silicon sample piece contacted, the rubber piece 6 of installation on the trachea 34 top can contact with monocrystalline silicon sample piece, increase frictional force, and trachea 34 is at the removal in-process, the slope setting at its inside air flue top can guide the air current direction, this step utilizes the additional frictional force that rubber piece 6 provided, can increase the fixed effect to monocrystalline silicon sample piece, reduce the emergence that the monocrystalline silicon sample piece appears sliding the condition, the slope setting at the top of the inside air flue of trachea 34 simultaneously can guide the air current to blow to monocrystalline silicon sample piece bottom, reduce the attachment of dust impurity.
Referring to fig. 2, a pair of rollers 7 are rotatably connected to corresponding sidewalls of the fourth chute 4; the side wall of the roller 7 is contacted with the elastic belt 43; during operation, the telescopic rod 11 can drive the elastic belt 43 to contact with the side wall of the roller 7 in the vertical movement process, at this moment, the sliding friction between the elastic belt 43 and the side wall of the fourth chute 4 can be changed into rolling friction through the rotatable effect of the roller 7, the elastic belt 43 is assisted to move, the rotatable effect of the roller 7 is utilized in the step, the friction effect generated between the elastic belt 43 and the side wall of the fourth chute 4 can be reduced, the occurrence of fracture caused by the friction between the elastic belt 43 and the fourth chute 4 is reduced, and the service life of equipment is prolonged.
Working principle: in the process of polishing monocrystalline silicon sample pieces by workers, the monocrystalline silicon sample pieces can be placed above the suction cup 12, gas between the suction cup 12 and the monocrystalline silicon sample pieces is discharged through the pressing effect, the suction cup 12 generates an adsorption effect on the monocrystalline silicon sample pieces, then the position of the polishing wheel 15 is adjusted through the movability of the sliding rod 13 and the positioning block 14, the monocrystalline silicon sample pieces can be polished through the rotation of the polishing wheel 15, after one surface of the monocrystalline silicon sample pieces is polished, the workers can drive the suction cup 12 to generate deformation through providing downward thrust for the monocrystalline silicon sample pieces, thereby enabling the top of the push plate 23 to be in contact with the bottom of the sealing plate 21 to generate a pushing effect, the sealing plate 21 enters the second chute 22, at the moment, the movement of the sealing plate 21 generates a gap, so that the air enters the suction cup 12 to reduce the adsorption effect, after the monocrystalline silicon sample pieces are polished, when a worker applies downward pressure to the sucker 12, the elastic supporting effect of the limiting ring block 31 is smaller than that of the sucker, the bottom of the sucker 12 can move in the third chute 3, meanwhile, when a monocrystalline silicon sample is polished, the air pipe 34 can be contacted with the monocrystalline silicon sample in advance, the air pipe 34 generates a moving effect through subsequent pressure application, at the moment, the space between the positioning rod 33 and the air pipe 34 is reduced, the internal air can be discharged to the outside through the air passage in the air pipe 34 and contacted with the monocrystalline silicon sample, in the process of moving the telescopic rod 11 up and down, the movement of the telescopic rod 11 can generate a pulling effect on the elastic belt 43, thereby driving the elastic belt 43 to move, at the moment, the collision balls 42 positioned on the elastic belt 43 can move among a plurality of groups of limiting balls 41 and continuously contact with a plurality of groups of limiting balls 41, the impact ball 42 can contact with the bottom of the impact plate 51 when passing through the limit ball 41, an upward pushing effect is generated on the top of the impact plate 51, the impact plate 51 is contacted with the clamping block 52 to generate a bump reaction, the rubber block 6 is arranged on the top of the air pipe 34 and can be contacted with a monocrystalline silicon sample in the process of contacting the air pipe 34 with the monocrystalline silicon sample, the friction force is increased, the inclined arrangement of the top of the air pipe 34 in the moving process can guide the air flow direction, the elastic belt 43 can be driven to be contacted with the side wall of the roller 7 in the process of moving the air pipe 11 up and down, and at the moment, the sliding friction between the elastic belt 43 and the side wall of the fourth chute 4 can be changed into rolling friction through the rotatable effect of the roller 7 to assist the movement of the elastic belt 43.
The foregoing has shown and described the basic principles, principal features and advantages of the utility model. It will be understood by those skilled in the art that the present utility model is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present utility model, and various changes and modifications may be made without departing from the spirit and scope of the utility model, which is defined in the appended claims.
Claims (7)
1. A single crystal silicon sample wafer polishing device comprises a polishing box (1); the bottom of the interior of the polishing box (1) is fixedly connected with a telescopic rod (11); the method is characterized in that: the output end of the telescopic rod (11) is provided with a sucker (12); a sliding rod (13) is connected to the top of the interior of the polishing box (1) in a sliding manner; the middle part of the sliding rod (13) is connected with a positioning block (14) in a sliding way; the bottom end of the positioning block (14) is rotationally connected with a polishing wheel (15); the middle part of the inner side wall of the polishing box (1) is fixedly connected with a bearing plate (16).
2. The single crystal silicon wafer polishing apparatus as set forth in claim 1, wherein: a plurality of groups of first sliding grooves (2) are formed in the side wall of the sucker (12); a second chute (22) is formed in the side wall of the first chute (2); a sealing plate (21) is connected inside the second chute (22) in a sliding way; the sealing plate (21) is connected with the second chute (22) through a spring; push plates (23) are fixedly connected to the tops of the bearing plates (16) below the plurality of groups of sealing plates (21).
3. A single crystal silicon wafer polishing apparatus as defined in claim 2, wherein: a third sliding groove (3) is formed in the top of the telescopic rod (11); the sucker (12) slides in the third chute (3); the inner side wall of the third chute (3) is connected with a limiting ring block (31) through a spring; a supporting rod (32) is fixedly connected to the bottom of the third chute (3); the supporting rod (32) passes through the bottom of the sucker (12); a positioning rod (33) is fixedly connected to the middle part of the supporting rod (32); an air pipe (34) is connected between the supporting rod (32) and the positioning rod (33) in a sliding way; the air pipe (34) and the supporting rod (32) are connected through a spring.
4. A single crystal silicon wafer polishing apparatus according to claim 3, wherein: a pair of fourth sliding grooves (4) are fixedly connected to the bottom of the bearing plate (16); a plurality of groups of limiting balls (41) are fixedly connected to the corresponding side walls of the fourth sliding chute (4) and the bearing plate (16); an impact ball (42) is arranged in a gap between the fourth chute (4) and the bearing plate (16); an elastic belt (43) is fixedly connected to the middle part of the collision ball (42); one end of the elastic belt (43) is fixedly connected to the side wall of the telescopic rod (11), and the other end of the elastic belt is fixedly connected to the side wall of the fourth chute (4).
5. The apparatus for polishing a silicon single crystal wafer according to claim 4, wherein: a fifth sliding groove (5) is formed in the bottom of the bearing plate (16) above the plurality of groups of limiting balls (41); a collision plate (51) is connected inside the fifth chute (5) in a sliding way; the fifth sliding groove (5) is connected with the collision plate (51) through a spring; a pair of clamping blocks (52) are connected to the inner side wall of the fifth sliding groove (5) above the collision plate (51) through springs.
6. The apparatus for polishing a silicon single crystal wafer according to claim 5, wherein: the top of the air pipe (34) is fixedly connected with a rubber block (6), and the top of an air passage in the air pipe (34) is obliquely arranged.
7. The apparatus for polishing a silicon single crystal wafer according to claim 5, wherein: the corresponding side walls of the pair of fourth sliding grooves (4) are respectively and rotatably connected with a roller (7); the side wall of the roller (7) is contacted with the elastic belt (43).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321234940.8U CN219925631U (en) | 2023-05-19 | 2023-05-19 | Monocrystalline silicon sample wafer burnishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321234940.8U CN219925631U (en) | 2023-05-19 | 2023-05-19 | Monocrystalline silicon sample wafer burnishing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219925631U true CN219925631U (en) | 2023-10-31 |
Family
ID=88488855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321234940.8U Active CN219925631U (en) | 2023-05-19 | 2023-05-19 | Monocrystalline silicon sample wafer burnishing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219925631U (en) |
-
2023
- 2023-05-19 CN CN202321234940.8U patent/CN219925631U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN208483616U (en) | A kind of bearing outer ring grinding device | |
| CN107283277A (en) | It is a kind of efficiently and to be easy to fixed short tube derusting device | |
| CN113199335A (en) | Automatic grinding device of electric motor rotor inside groove | |
| CN219925631U (en) | Monocrystalline silicon sample wafer burnishing device | |
| CN111215401A (en) | Pipeline machining equipment and machining method | |
| CN215036402U (en) | Outer wall burnishing device for slot pipe fitting | |
| CN212145700U (en) | Rectangular square tube polishing equipment | |
| CN112893342A (en) | Hydraulic engineering pipeline surface rust cleaning device with location nature | |
| CN116900900A (en) | Pipeline inner wall rust cleaning equipment with clean function | |
| CN218546030U (en) | Electricity core weeping detection device | |
| CN115157076B (en) | Grinding method and grinding device using surface grinding machine and cross grinding machine | |
| CN215354851U (en) | Silicon wafer cleaning device | |
| CN211896678U (en) | Shaping and cooling equipment suitable for glass bottles | |
| CN209156509U (en) | A kind of curved surface machine and glue removing | |
| CN112123106A (en) | Stainless steel elbow pipe fitting surface finishing device | |
| CN114751298A (en) | Intelligent cooling is metallurgical with walking crane jack and driving intelligent control device by force | |
| CN113941534A (en) | Electrochemical detection device with dust removal mechanism for plastic chip manufacturing | |
| CN113929286B (en) | High-efficient cooling device is used in production of laboratory glass instrument | |
| CN217373113U (en) | Cooling equipment is used in production of rubber conveyer belt | |
| CN113829532A (en) | Transmission device is used in silicon chip production with lead positive mechanism | |
| CN109333297B (en) | Battery cell carrier plate processing platform | |
| CN219378348U (en) | Cleaning equipment for machining metal parts | |
| CN116900524B (en) | Laser welding machine | |
| CN219682078U (en) | Spray set for spray column convenient to installation | |
| CN220447169U (en) | Toughened glass film sticking device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |