CN219843752U - DC-DC control circuit for switching far and near light by using MOS tube - Google Patents
DC-DC control circuit for switching far and near light by using MOS tube Download PDFInfo
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- CN219843752U CN219843752U CN202321267654.1U CN202321267654U CN219843752U CN 219843752 U CN219843752 U CN 219843752U CN 202321267654 U CN202321267654 U CN 202321267654U CN 219843752 U CN219843752 U CN 219843752U
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Abstract
The utility model relates to a DC-DC control circuit for switching far and near light by using an MOS tube, which is characterized by comprising an MOS tube Q8, an MOS tube Q7 and an MOS tube Q3. The utility model aims to solve the problems of complex design, large ripple noise interference and high cost in the existing far and near light driving circuit, and the DC-DC control circuit for switching the far and near light is realized by using the MOS tube, so that the far and near light function can be realized by only one path of switching power supply, and the requirements on the design complexity are reduced, the ripple noise interference is reduced, and the cost is reduced.
Description
Technical Field
The utility model relates to an LED load constant current circuit.
Background
In recent years, LED light sources are widely used in the automotive industry due to their small size, long life, and high efficiency. The LED itself is a light emitting diode, and has a characteristic that when the voltage across the LED changes little, the current flowing through the LED changes much. To avoid burning out the LED due to excessive current flow, the LED is typically used in series, and the LED is turned on by constant current driving. LED loads of the series type often use switching power supply circuits for reasons of higher voltages. The existing far and near light driving circuit adopts the far light and near light to drive through a switch power supply respectively, so that the design is complex, the ripple noise interference is large, the cost is high, and the large-scale popularization of the application of the LED in the aspect of the far and near light of the automobile is not facilitated.
Disclosure of Invention
The utility model aims to solve the technical problems that: the current high beam and low beam are driven by a switch power circuit.
In order to solve the technical problems, the technical scheme of the utility model provides a DC-DC control circuit for switching far and near light by using an MOS tube, which is characterized by comprising an MOS tube Q8, an MOS tube Q7 and an MOS tube Q3, wherein:
the grid electrode of the MOS tube Q8 is connected with one end of a resistor R20, one end of a resistor R29 and the cathode of a voltage stabilizing tube Z5 at the same time; the source electrode of the MOS tube Q8 is grounded; the drain electrode of the MOS tube Q8 is connected with the grid electrode of the MOS tube Q7; the other end of the resistor R29 and the anode of the voltage stabilizing tube Z5 are grounded; the other end of the resistor R20 is connected with the cathode of the anti-reflection diode D3, and the anode of the anti-reflection diode D3 is connected with the high beam input end HB+;
the grid electrode of the MOS tube Q7 is connected with the drain electrode of the MOS tube Q8, one end of the resistor R17, one end of the resistor R23 and the cathode of the voltage stabilizing tube Z4; the source electrode of the MOS tube Q7 is grounded; the drain electrode of the MOS tube Q7 is connected with one end of the resistor R15; the other end of the resistor R23 and the anode of the voltage stabilizing tube Z3 are grounded; the other end of the resistor R17 is connected with a VCC-LB network after passing through the reverse connection preventing circuit and the filter circuit;
a resistor R4 is bridged between the grid electrode and the source electrode of the MOS tube Q3, the grid electrode of the MOS tube Q3 is also connected with the other end of the resistor R15, the source electrode of the MOS tube Q3 is also connected with the input end LED+ of the high beam LED load, and the input end LED+ is connected with the anode of the LED connected in series in the high beam LED load; the capacitor C28 and the resistor R12 are connected in series in a bridging manner between the grid electrode and the drain electrode of the MOS tube Q3, the drain electrode of the MOS tube Q3 is also connected with the input end LED_MID of the low beam LED load, and the input end LED_MID is connected with the anode of the LEDs connected in series in the low beam LED load.
Preferably, the MOS transistor Q8 and the MOS transistor Q7 are N-channel MOS transistors, and the MOS transistor Q3 is a P-channel MOS transistor.
Preferably, a voltage stabilizing tube Z3 is bridged between the gate and the source of the MOS tube Q3, where the anode of the voltage stabilizing tube Z3 is connected to the gate of the MOS tube Q3, and the cathode is connected to the source of the MOS tube Q3.
The utility model aims to solve the problems of complex design, large ripple noise interference and high cost in the existing far and near light driving circuit, and the DC-DC control circuit for switching the far and near light is realized by using the MOS tube, so that the far and near light function can be realized by only one path of switching power supply, and the requirements on the design complexity are reduced, the ripple noise interference is reduced, and the cost is reduced.
Drawings
Fig. 1 is a circuit diagram of a DC-DC control circuit for switching high and low beam using MOS transistors according to an embodiment of the disclosure;
FIG. 2 is a schematic circuit diagram of a low beam LED load;
fig. 3 is a circuit schematic of a high beam LED load.
In the figure, NTC represents a thermistor, NC represents a No. 4 pin of a P1 interface piece and a No. 8 pin of a P2 interface piece for suspension treatment, the device is not used for any function, HB2 represents a signal detection line connected with a lamp panel part at the whole lamp position, the function is not actually used, and P1, P2 and P3 are interface pieces.
Detailed Description
The utility model will be further illustrated with reference to specific examples. It is to be understood that these examples are illustrative of the present utility model and are not intended to limit the scope of the present utility model. Furthermore, it should be understood that various changes and modifications can be made by one skilled in the art after reading the teachings of the present utility model, and such equivalents are intended to fall within the scope of the utility model as defined in the appended claims.
In this embodiment, as shown in fig. 2, the low beam LED load to be driven includes LED tubes LED1, LED2, LED4, LED6, LED8, LED10, and LED12 connected in series, and capacitors C2, C4, C17, C24, C26, C31, C35 are respectively connected in parallel to two ends of the LED tubes LED1, LED2, LED4, LED6, LED8, LED10, and LED12, and in fig. 2, TP3, TP4, TP5, TP6, TP14, TP21, TP29, TP36, TP46, and TP54 respectively represent an LED1 anode (also an LED11 cathode in a high beam load circuit) in the low beam LED load circuit, a thermistor, a P1 interface 4 suspended pin, an LED2 anode, an LED4 anode, an LED6 anode, an LED8 anode, an LED10 anode, an LED12 anode, and an electrical performance (e.g. voltage) test point of a ground network.
The far-reaching LED load to be driven is shown in fig. 3, and comprises LED tubes LED3, LED5, LED7, LED9 and LED11 which are connected in series, wherein the two ends of the LED tubes LED3, LED5, LED7, LED9 and LED11 are respectively connected with capacitors C8, C20, C25, C30 and C33 in parallel, in fig. 3, TP7, TP38, TP18, TP28, TP31, TP41 and TP50 respectively represent electrical performance (such as voltage) test points of an LED3 anode, a ground network, an LED5 anode, an LED7 anode, an LED9 anode, an LED11 anode and an LED11 cathode (simultaneously also an LED1 anode in a low-beam load circuit).
In order to drive the low beam LED load and the high beam LED load shown in fig. 2 and 3, as shown in fig. 1, the DC-DC control circuit for switching the high beam by using the MOS transistor disclosed in this embodiment includes a MOS transistor Q8, a MOS transistor Q7, and a MOS transistor Q3. In fig. 3, TP13, TP17, TP27, TP40, TP43, TP45, TP52, TP58, TP55, TP48 respectively represent an input terminal led+ of the high beam LED load, an anode of the voltage stabilizing tube Z3, a cathode of the voltage stabilizing tube Z3, an input terminal led_mid of the low beam LED load, a VCC-LB network after passing through the anti-reverse circuit and the filter circuit for the low beam input lb+, a drain of the MOS tube Q7, a gate of the MOS tube Q7, a cathode of the voltage stabilizing tube Z5, a gate of the MOS tube Q8, and an electrical performance (e.g., voltage) test point of the high beam input terminal hb+.
The grid electrode of the MOS tube Q8 is connected with one end of a resistor R20, one end of a resistor R29 and the cathode of a voltage stabilizing tube Z5 at the same time; the source electrode of the MOS tube Q8 is grounded to GND2; the drain electrode of the MOS tube Q8 is connected with the grid electrode of the MOS tube Q7. The other end of the resistor R29 is grounded GND2 at the anode of the regulator Z5. The other end of the resistor R20 is connected with the cathode of the anti-reflection diode D3, and the anode of the anti-reflection diode D3 is connected with the high beam input end HB+.
The grid electrode of the MOS tube Q7 is connected with the drain electrode of the MOS tube Q8, one end of the resistor R17, one end of the resistor R23 and the cathode of the voltage stabilizing tube Z4; the source electrode of the MOS tube Q7 is grounded to GND2; the drain electrode of the MOS tube Q7 is connected with one end of the resistor R15. The other end of the resistor R23 is grounded GND2 at the anode of the regulator tube Z3. The other end of the resistor R17 is connected with the VCC-LB network after passing through the reverse connection preventing circuit and the filter circuit.
The grid electrode of the MOS tube Q3 is connected with one end of a resistor R4, one end of a resistor R12, the other end of a resistor R15 and the anode of a voltage stabilizing tube Z3 at the same time; the source electrode of the MOS tube Q3 is connected with the input end LED+ of the high beam LED load and the other end of the resistor R4 and the cathode of the voltage stabilizing tube Z3 at the same time; the drain of MOS transistor Q3 is near the input terminal LED_MID of the photo LED load and one end of capacitor C28. The other end of the capacitor C28 is connected to the other end of the resistor R12.
In this embodiment, the MOS transistor Q8 and the MOS transistor Q7 are N-channel MOS transistors, and the MOS transistor Q3 is a P-channel MOS transistor.
Working principle of low beam:
1. when only the VCC-LB network is electrified and the high beam input terminal hb+ is not electrified, the voltage Vg2 of the gate of the MOS transistor Q7 is determined by the voltage division between the resistor R17 and the resistor R23, and the voltage Vg2 of the gate of the MOS transistor Q7 does not exceed the voltage Vz4 of the voltage stabilizing tube Z4. When the gate-source voltage Vgs2 of the MOS transistor Q7 exceeds the gate-source voltage threshold Vgs2 (th), the drain-source of the MOS transistor Q7 is turned on, and the gate voltage Vg3 of the MOS transistor Q3 is pulled down to 0V.
2. When the voltage value of the gate-source voltage Vgs3 of the MOS tube Q3 exceeds the gate-source voltage threshold Vgs3 (th), the drain-source of the MOS tube Q3 is conducted, so that the LED_MID of the low beam LED load input end is identical with the LED+ potential of the high beam LED input end, namely the high beam LED load is short-circuited, and the effect that only the low beam LED load is bright is achieved.
3. In order to prevent the damage of the MOS tube caused by the overlarge gate-source voltage Vgs3 of the MOS tube Q3, the anode of the voltage stabilizing tube Z3 is connected with the gate of the MOS tube Q3, and the cathode is connected with the source of the MOS tube Q3, so that the voltage value of the gate-source voltage Vgs3 of the MOS tube Q3 does not exceed Vz3.
High beam working principle:
1. when the VCC-LB network and the high beam input terminal hb+ are both electrified, the gate voltage Vg1 of the MOS transistor Q8 is determined by the diode D3, the resistor R20 and the resistor R29, and the gate voltage Vg1 of the MOS transistor Q8 does not exceed the voltage Vz5 of the voltage stabilizing transistor Z5. When the gate-source voltage Vgs1 of the MOS transistor Q8 exceeds the gate-source voltage threshold Vgs1 (th), the drain-source of the MOS transistor Q8 is turned on, and the gate voltage Vg2 of the MOS transistor Q7 is pulled down to 0V.
2. The gate-source voltage Vgs2 of the MOS transistor Q7 does not exceed the gate-source voltage threshold Vgs2 (th) thereof, so that the drain-source of the MOS transistor Q7 is not turned on, then the gate-source voltage Vgs3 of the MOS transistor Q3 does not exceed the gate-source voltage threshold Vgs3 (th) thereof, so that the drain-source of the third MOS transistor Q3 is not turned on, and in this way, the low beam LED load input terminal led_mid is different from the high beam LED input terminal led+ potential, i.e., the situation that the high beam LED load is short circuited disappears, thereby realizing the effect that the low beam LED load and the high beam LED load are simultaneously lit.
4. Principle of far and near light switching:
the switching of the high beam and the low beam is realized by controlling the on or off of the MOS tube Q3:
1. when the MOS tube Q3 is conducted, the LED_MID of the low-beam LED load input end is the same as the LED+ potential of the high-beam LED input end, namely the high-beam LED load is short-circuited, and the effect that only the low-beam LED load is bright is realized;
2. when the MOS tube Q3 is cut off, the LED_MID of the low beam LED load input end is different from the LED+ potential of the high beam LED input end, namely the situation that the high beam LED load is short-circuited disappears, so that the effect that the low beam LED load and the high beam LED load are simultaneously on is realized.
Claims (3)
1. The DC-DC control circuit for switching far and near light by using MOS (metal oxide semiconductor) tubes is characterized by comprising a MOS tube Q8, a MOS tube Q7 and a MOS tube Q3, wherein:
the grid electrode of the MOS tube Q8 is connected with one end of a resistor R20, one end of a resistor R29 and the cathode of a voltage stabilizing tube Z5 at the same time; the source electrode of the MOS tube Q8 is grounded; the drain electrode of the MOS tube Q8 is connected with the grid electrode of the MOS tube Q7; the other end of the resistor R29 and the anode of the voltage stabilizing tube Z5 are grounded; the other end of the resistor R20 is connected with the cathode of the anti-reflection diode D3, and the anode of the anti-reflection diode D3 is connected with the high beam input end HB+;
the grid electrode of the MOS tube Q7 is connected with the drain electrode of the MOS tube Q8, one end of the resistor R17, one end of the resistor R23 and the cathode of the voltage stabilizing tube Z4; the source electrode of the MOS tube Q7 is grounded; the drain electrode of the MOS tube Q7 is connected with one end of the resistor R15; the other end of the resistor R23 and the anode of the voltage stabilizing tube Z3 are grounded; the other end of the resistor R17 is connected with a VCC-LB network after passing through the reverse connection preventing circuit and the filter circuit;
a resistor R4 is bridged between the grid electrode and the source electrode of the MOS tube Q3, the grid electrode of the MOS tube Q3 is also connected with the other end of the resistor R15, the source electrode of the MOS tube Q3 is also connected with the input end LED+ of the high beam LED load, and the input end LED+ is connected with the anode of the LED connected in series in the high beam LED load; the capacitor C28 and the resistor R12 are connected in series in a bridging manner between the grid electrode and the drain electrode of the MOS tube Q3, the drain electrode of the MOS tube Q3 is also connected with the input end LED_MID of the low beam LED load, and the input end LED_MID is connected with the anode of the LEDs connected in series in the low beam LED load.
2. The DC-DC control circuit for switching high and low beam with MOS transistor according to claim 1, wherein the MOS transistor Q8 and the MOS transistor Q7 are N-channel MOS transistors, and the MOS transistor Q3 is a P-channel MOS transistor.
3. The DC-DC control circuit for switching high and low beam by using a MOS transistor according to claim 1, wherein a voltage regulator Z3 is connected across the gate and the source of the MOS transistor Q3, wherein the anode of the voltage regulator Z3 is connected to the gate of the MOS transistor Q3 and the cathode is connected to the source of the MOS transistor Q3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321267654.1U CN219843752U (en) | 2023-05-24 | 2023-05-24 | DC-DC control circuit for switching far and near light by using MOS tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321267654.1U CN219843752U (en) | 2023-05-24 | 2023-05-24 | DC-DC control circuit for switching far and near light by using MOS tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219843752U true CN219843752U (en) | 2023-10-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321267654.1U Active CN219843752U (en) | 2023-05-24 | 2023-05-24 | DC-DC control circuit for switching far and near light by using MOS tube |
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| Country | Link |
|---|---|
| CN (1) | CN219843752U (en) |
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2023
- 2023-05-24 CN CN202321267654.1U patent/CN219843752U/en active Active
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