CN219833991U - High-voltage pulse power supply - Google Patents
High-voltage pulse power supply Download PDFInfo
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- CN219833991U CN219833991U CN202320374408.XU CN202320374408U CN219833991U CN 219833991 U CN219833991 U CN 219833991U CN 202320374408 U CN202320374408 U CN 202320374408U CN 219833991 U CN219833991 U CN 219833991U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The utility model discloses a high-voltage pulse power supply, which comprises: the device comprises a resonance charging module, a transformer, a secondary magnetic switch compression module, a semiconductor circuit breaker module and a load. According to the utility model, the resonance charging module is charged, the primary side of the transformer is discharged after the charging is completed, meanwhile, the secondary side of the transformer is charged by the secondary magnetic switch compression module, after the transformer is saturated, the secondary magnetic switch compression module provides forward pumping current and reverse pumping current for the semiconductor circuit breaker module, and when the reverse pumping current reaches a peak value, energy is released to a load to form ultra-narrow pulse. The utility model can compress the pulse to tens of nanoseconds, the semiconductor circuit breaker module can realize rapid turn-off of tens of nanoseconds, and the peak current can reach hundreds to thousands of amperes, so that the high-voltage ultra-narrow pulse can be output at the load, and the circuit structure of the high-voltage pulse power supply is simple and is not easy to damage.
Description
Technical Field
The utility model relates to the technical field of power supplies, in particular to a high-voltage pulse power supply.
Background
The turn-off current of the semiconductor cut-off switch (Semiconductor Opening Switch, SOS) can reach thousands of amperes, the reverse withstand voltage can reach hundreds of kilovolts, and the semiconductor cut-off switch can be used in a high-voltage narrow pulse power supply.
However, SOS requires enough pump current to achieve a fast turn-off, typically 0.5-10ns. The pumping current of SOS generally requires tens nanoseconds to hundred nanoseconds, and the peak value of the current needs to reach hundreds to thousands amperes, and if the common semiconductor switch is adopted, the series-parallel connection is required to meet the requirement, so that the high-voltage narrow-pulse power supply has a complex structure and is easy to damage.
Accordingly, the prior art is still in need of improvement and development.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present utility model aims to provide a high-voltage pulse power supply, so as to solve the problems that the pumping current of the SOS needs to be connected in series-parallel to meet the requirement that the pumping current reaches tens of nanoseconds to hundreds of nanoseconds and the peak current needs to reach hundreds to thousands of amperes, which results in the high-voltage narrow-pulse power supply having a complex structure and being easy to damage.
The technical scheme of the utility model is as follows:
in a first aspect, the present utility model provides a high voltage pulse power supply, comprising: the device comprises a resonance charging module, a transformer, a secondary magnetic switch compression module, a semiconductor circuit breaker module and a load; wherein,,
the resonance charging module is connected with the primary side of the transformer and is used for discharging the primary side of the transformer after charging is completed;
the secondary side of the transformer is connected with the secondary magnetic switch compression module and is used for charging the secondary magnetic switch compression module;
the secondary magnetic switch compression module is respectively connected with the transformer and the semiconductor circuit breaker module and is used for providing forward pumping current and reverse pumping current for the semiconductor circuit breaker module;
the semiconductor circuit breaker module is respectively connected with the secondary magnetic switch compression module and the load and is used for releasing energy to the load and forming ultra-narrow pulses.
In a further arrangement of the utility model, the high voltage pulse power supply further comprises: the waveform optimization module is connected with the semiconductor circuit breaker module and the load respectively and used for adjusting the pre-pulse, the rising time and the flat-top time of the ultra-narrow pulse.
According to a further arrangement of the utility model, the resonant charging module comprises: the device comprises a direct current power supply, a first capacitor, a first inductor, a first transistor, a second transistor, a driving unit and a second capacitor; wherein,,
one end of the first capacitor is connected with the direct current power supply and one end of the first inductor respectively, and the other end of the first capacitor is grounded;
the other end of the first inductor is connected with the emitter of the first transistor;
the drain electrode of the first transistor is connected with one end of the second capacitor, and the grid electrode of the first transistor is connected with the driving unit;
the other end of the second capacitor is connected with the primary side of the transformer;
the emitter of the second transistor is connected with one end of the second capacitor, the drain of the second transistor is connected with the primary side of the transformer, and the grid of the second transistor is connected with the driving unit.
According to a further arrangement of the utility model, the two-stage magnetic switch compression module comprises: the third capacitor, the fourth capacitor, the fifth capacitor, the first magnetic switch and the second magnetic switch; wherein,,
one end of the third capacitor is connected with the secondary side of the transformer and one end of the fourth capacitor respectively, and the other end of the third capacitor is connected with the secondary side of the transformer and one end of the second magnetic switch respectively;
the other end of the fourth capacitor is connected with one end of the first magnetic switch;
the other end of the first magnetic switch is connected with the other end of the second magnetic switch and one end of the fifth capacitor respectively;
the other end of the fifth capacitor is connected with the semiconductor circuit breaker module;
one end of the second magnetic switch is also connected with the semiconductor circuit breaker module.
In a further aspect of the utility model, the semiconductor circuit breaker module comprises: a semiconductor cut-off switch and a second inductor; wherein,,
the positive electrode of the semiconductor cut-off switch is respectively connected with one end of the second magnetic switch and the load, and the negative electrode of the semiconductor cut-off switch is respectively connected with one end of the second inductor and the load;
the other end of the second inductor is connected with the fifth capacitor.
In a further arrangement of the utility model, the waveform optimization module comprises: ferrite magnetic ring and sixth electric capacity; wherein,,
one end of the ferrite magnetic ring is connected with the semiconductor circuit breaker module, and the other end of the ferrite magnetic ring is connected with the sixth capacitor and the load respectively;
the sixth capacitor is connected in parallel with the load.
Further arrangement of the utility model, the second magnetic switch comprises: the magnetic ring and the copper rod; wherein, the bar copper wears to locate the magnetic ring.
According to a further arrangement of the utility model, the first transistor and the second transistor are both insulated gate bipolar transistors.
Further, the driving unit of the present utility model includes: a two-way driving circuit and an isolation transformer; wherein,,
the two-way driving circuit is respectively connected with the primary side of the isolation transformer and the grid electrode of the second transistor;
the secondary side of the isolation transformer is connected with the gate of the first transistor.
The utility model provides a high-voltage pulse power supply, which comprises: the device comprises a resonance charging module, a transformer, a secondary magnetic switch compression module, a semiconductor circuit breaker module and a load. According to the utility model, the resonant charging module is charged, when the resonant charging module is charged, the primary side of the transformer is discharged, and when the resonant charging module is discharged, the secondary side of the transformer is charged by the secondary magnetic switch compression module, and after the transformer is saturated, the secondary magnetic switch compression module provides forward pumping current and reverse pumping current for the semiconductor circuit breaker module, and when the reverse pumping current reaches a peak value, energy is released to a load to form ultra-narrow pulses. According to the utility model, the pulse can be compressed to tens of nanoseconds by adopting the two-stage magnetic switch compression module, pumping current is provided for the semiconductor circuit breaker module, rapid switching-off of a few nanoseconds is realized, peak current can reach hundreds to thousands of amperes, and therefore, high-voltage ultra-narrow pulse can be output at a load, and the circuit structure of the high-voltage pulse power supply is simple and is not easy to damage.
Drawings
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the present utility model, and that other drawings may be obtained from the structures shown in these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a pump circuit and an output waveform diagram of an SOS.
Fig. 2 is a schematic block diagram of a high voltage pulse power supply in accordance with the present utility model.
Fig. 3 is a schematic diagram of a magnetic core hysteresis loop and a magnetic switch equivalent circuit diagram.
Fig. 4 is a schematic circuit diagram of a high voltage pulse power supply according to the present utility model.
Fig. 5 is a schematic structural view of a second magnetic switch in the present utility model.
Fig. 6 is a schematic diagram of waveform optimization of the output pulse in the present utility model.
Fig. 7 is a waveform diagram of the voltage output of the high voltage pulse power supply according to the present utility model.
Fig. 8 is a flow chart of the ultra-narrow pulse output method of the high voltage pulse power supply of the present utility model.
The marks in the drawings are as follows: 100. a resonant charging module; 110. a driving unit; 111. a two-way drive circuit; 200. a transformer; 300. a second-stage magnetic switch compression module; 400. a semiconductor cut-out switch module; 500. a load; 600. a waveform optimization module; 610. ferrite magnetic rings.
Detailed Description
The utility model provides a high-voltage pulse power supply which can be applied to devices such as radars, particle accelerators, nuclear fusion and the like. In order to make the objects, technical solutions and effects of the present utility model clearer and more obvious, the present utility model will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the utility model.
In the description and claims, unless the context specifically defines the terms "a," "an," "the," and "the" include plural referents. If there is a description of "first", "second", etc. in an embodiment of the present utility model, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature.
It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. Further, "connected" or "coupled" as used herein may include wirelessly connected or wirelessly coupled. The term "and/or" as used herein includes all or any element and all combination of one or more of the associated listed items.
It will be understood by those skilled in the art that all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this utility model belongs unless defined otherwise. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present utility model.
The semiconductor cut-off switch is a high-voltage diode with a special structure, and adopts a P+ -P-N-N+ semiconductor structure, when forward current is injected into SOS, a large amount of plasmas are generated in the device, the device is in a conducting state, reverse current is injected into SOS immediately, so that rapid turn-off of a plurality of ns can be realized, the turn-off current can reach thousands of amperes, and reverse withstand voltage can reach hundreds of kilovolts, therefore, the SOS can be used in a high-voltage narrow pulse power supply with a voltage of tens of kilovolts and a bottom width of ns. SOS requires a sufficiently fast pump current to achieve fast turn-off, typically 0.5-10ns. Fig. 1 is a schematic diagram of a pump circuit of the SOS (fig. 1 (a)) and an output waveform diagram (fig. 1 (b)). The working process is as follows: initially, the voltage of the capacitor Ca is charged to U0, when the switch S+ is closed, the energy on the capacitor Ca is transferred to the capacitor Cb through the switch S+, the inductor L+ and the SOS, and the loop current I+ flows through the SOS to provide forward pumping for the SOS; when the voltage at two ends of the capacitor Cb reaches a peak value, the switch S+ is opened, the switch S-is closed, the energy on the capacitor Cb is transferred to the loop inductance L-and I-flows through the SOS to provide reverse pumping for the SOS; when the reverse pumping current reaches the peak value, the SOS realizes quick turn-off, and the turn-off time is generally 0.5-10ns. Simultaneously, the energy on the inductor is released to the load to form high-voltage ultra-narrow pulses.
However, the SOS pump current time generally requires tens nanoseconds to hundreds nanoseconds, the peak current value needs to reach hundreds to thousands amperes, and the common semiconductor switch needs to be connected in series and parallel to meet the requirement, so that the structure is complex and easy to damage.
Aiming at the technical problems, the utility model provides a high-voltage pulse power supply and an ultra-narrow pulse output method thereof, wherein the high-voltage pulse power supply comprises: the device comprises a resonance charging module, a transformer, a secondary magnetic switch compression module, a semiconductor circuit breaker module and a load, wherein the resonance charging module is charged, the primary side of the transformer is discharged after the resonance charging module is charged, the secondary side of the transformer is charged by the secondary magnetic switch compression module when the primary side of the transformer is discharged by the resonance charging module, the secondary magnetic switch compression module provides forward pumping current and reverse pumping current for the semiconductor circuit breaker module after the transformer is saturated, and when the reverse pumping current reaches a peak value, energy is released to the load to form ultra-narrow pulses. Therefore, the pulse can be compressed to tens of nanoseconds by adopting the two-stage magnetic switch compression module, pumping current is provided for the semiconductor circuit breaker module, rapid switching-off of a few nanoseconds is realized, peak current can reach hundreds to thousands of amperes, and accordingly, high-voltage ultra-narrow pulse can be output on a load, and the circuit structure of the high-voltage pulse power supply for providing forward pumping current and reverse pumping current by adopting the two-stage magnetic switch compression module is simple and is not easy to damage.
Referring to fig. 2 to 7, the present utility model provides a preferred embodiment of a high voltage pulse power supply.
As shown in fig. 2, the present utility model provides a high voltage pulse power supply, which includes: the device comprises a resonance charging module 100, a transformer 200, a two-stage magnetic switch compression module 300, a semiconductor circuit breaker module 400 and a load 500. The resonant charging module 100 is connected to the primary side of the transformer 200, and is configured to discharge the primary side of the transformer 200 after charging is completed; the secondary side of the transformer 200 is connected with the secondary magnetic switch compression module 300 and is used for charging the secondary magnetic switch compression module 300; the secondary magnetic switch compression module 300 is respectively connected with the transformer 200 and the semiconductor break switch module 400, and is used for providing forward pumping current and reverse pumping current for the semiconductor break switch module 400; the semiconductor cut-off switch module 400 is connected to the two-stage magnetic switch compression module 300 and the load 500, respectively, for releasing energy to the load 500 and forming ultra-narrow pulses.
In particular, the present utility model uses a magnetic switch in a high voltage pulsed power supply by taking advantage of the non-linear change in permeability of the core of the magnetic switch during saturation. As shown in FIG. 3, FIG. 3 shows a magnetic core hysteresis loop (FIG. 3 a) and an equivalent circuit diagram (FIG. 3 b), bs represents saturation induction, br represents residual induction, H represents magnetic field strength, hc represents coercive force, and curve slope represents permeability, la > Laa in FIG. 2. When the magnetic core is not saturated, the magnetic permeability is larger, the inductance is larger, the equivalent S is disconnected, and the equivalent is open circuit; when the magnetic core is saturated, the magnetic permeability is rapidly reduced, the inductance is reduced, and the magnetic core is closed equivalent to S, which is equivalent to conduction. The magnetic switch has a repetition frequency of tens of kilohertz, a withstand voltage of tens of kilovolts, a peak current of thousands of amperes, and can meet SOS pumping requirements.
In particular, in the present utility model, by charging the resonant charging module 100, when the resonant charging module 100 discharges the primary side of the transformer 200 after charging, and when the resonant charging module 100 discharges the primary side of the transformer 200, the secondary side of the transformer 200 charges the secondary magnetic switch compression module 300, and when the transformer 200 is saturated, the secondary magnetic switch compression module 300 provides the semiconductor break switch module 400 with a forward pumping current and a reverse pumping current, and when the reverse pumping current reaches a peak value, energy is released to the load 500 to form an ultra-narrow pulse. Therefore, by utilizing the characteristics of the magnetic switch, the pulse can be compressed to tens of nanoseconds by adopting the two-stage magnetic switch compression module 300, the rapid turn-off of tens of nanoseconds is realized, the peak current can reach hundreds to thousands of amperes, so that the high-voltage ultra-narrow pulse can be output at the load 500, and the circuit structure of the high-voltage pulse power supply for providing the forward pumping current and the reverse pumping current by adopting the two-stage magnetic switch compression module 300 is simpler than the structure of adopting the conventional semiconductor switch in series connection mode, and is not easy to damage.
Referring to fig. 2 and 4, in a further implementation of an embodiment, the resonant charging module 100 includes: the driving circuit comprises a direct current power supply U, a first capacitor C1, a first inductor L1, a first transistor Q1, a second transistor Q2, a driving unit and a second capacitor C2. One end of the first capacitor C1 is connected to the dc power supply U and one end of the first inductor L1, and the other end of the first capacitor C1 is grounded; the other end of the first inductor L1 is connected with the emitter of the first transistor Q1; the drain electrode of the first transistor Q1 is connected to one end of the second capacitor C2, and the gate electrode of the first transistor Q1 is connected to the driving unit 110; the other end of the second capacitor C2 is connected with the primary side of the transformer 200; an emitter of the second transistor Q2 is connected to one end of the second capacitor C2, a drain of the second transistor Q2 is connected to a primary side of the transformer 200, and a gate of the second transistor Q2 is connected to the driving unit 110.
Specifically, the second capacitor C2 is an energy storage capacitor, the dc power supply U charges the second capacitor C2 to U0 through the first capacitor C1 and the first inductor L1, and when the voltage of the second capacitor C2 reaches a peak value, the driving unit 100 controls the first transistor Q1 to be turned off, and the charging is ended. At this time, the driving unit 100 controls the second transistor Q2 to be turned on, so that the second capacitor C2 discharges the primary side of the transformer.
In some embodiments, the first inductor L1 is made of a tank-type manganese-zinc ferrite, which has the advantage of small volume, so as to be convenient for installation, and a higher voltage gain can be obtained by adopting resonance charging, for example, when the direct-current charging voltage is 350V, the second capacitor C2 can obtain 600V. In addition, by adjusting the loop parameter, the primary side discharge time of the second capacitor C2 to the transformer may be adjusted so that the loop current will not burn out the transistor due to excessive current, for example, the loop parameter may be adjusted so that the primary side discharge time of the second capacitor C2 to the transformer is 2 μs. It should be noted that, if the discharge time of the second capacitor C2 is too long, the output pulse is difficult to compress to the required pulse width, and if the discharge time is too short, the pre-pulse of the output pulse is too large.
In some embodiments, the first transistor Q1 and the second transistor Q2 may employ high-power Insulated Gate Bipolar Transistors (IGBTs).
Referring to fig. 4, in a further implementation of an embodiment, the driving unit 110 includes: the two-way driving circuit 111 and the isolation transformer T. Wherein, the two-way driving circuit 111 is connected to the primary side of the isolation transformer T and the gate of the second transistor Q2, respectively; the secondary side of the isolation transformer T is connected to the gate of the first transistor Q1.
Specifically, the first transistor Q1 and the second transistor Q2 are controlled by a two-way driving circuit 111, where an isolation transformer T is connected between the first transistor Q1 and the two-way driving circuit 111, so that the use safety is improved. It should be noted that the two-way driving circuit is in the prior art, and thus will not be described herein.
Referring to fig. 1 and 4, in a further implementation of an embodiment, the two-stage magnetic switch compression module 300 includes: the third capacitor C3, the fourth capacitor C4, the fifth capacitor C5, the first magnetic switch MS1 and the second magnetic switch MS2. One end of the third capacitor C3 is connected to the secondary side of the transformer and one end of the fourth capacitor C4, and the other end of the third capacitor C3 is connected to the secondary side of the transformer and one end of the second magnetic switch MS 2; the other end of the fourth capacitor C4 is connected with one end of the first magnetic switch MS 1; the other end of the first magnetic switch MS1 is connected with the other end of the second magnetic switch MS2 and one end of the fifth capacitor C5 respectively; the other end of the fifth capacitor C5 is connected to the semiconductor break switch module 400; one end of the second magnetic switch MS2 is also connected to the semiconductor cut-off switch module 400.
Further, the semiconductor cut-out switch module 400 includes: the semiconductor cut-off switch SOS and the second inductor L2. Wherein, the positive pole of the semiconductor cut-off switch SOS is connected with one end of the second magnetic switch MS2 and the load (resistor R in fig. 4), and the negative pole of the semiconductor cut-off switch SOS is connected with one end of the second inductor L2 and the load; the other end of the second inductor L2 is connected to the fifth capacitor C5.
Specifically, after the second capacitor C2 discharges the primary side of the transformer, the secondary side of the transformer starts to charge the third capacitor C3 and the fourth capacitor C4, and after the parameters of the third capacitor C3 and the fourth capacitor C4 are adjusted, the voltages of the third capacitor C3 and the fourth capacitor C4 are charged to the peak voltage U C4 When the transformer is saturated and the magnetic permeability is reduced, so that the secondary side inductance of the transformer is reduced rapidly, the third capacitor C3 discharges the secondary side of the transformer, the voltage at two ends of the third capacitor C3 is subjected to polarity inversion, and when the polarity inversion is completed, the voltage at the connection part of the first magnetic switch MS1 and the fourth capacitor C4 is changed into-2U C4 At this time the firstThe magnetic switch MS1 is turned on, and the third capacitor C3 and the fourth capacitor C4 are connected in series to charge the fifth capacitor C5, so as to provide a forward pumping current for the semiconductor cut-off switch SOS. When the voltage across the fifth capacitor C5 reaches the peak voltage, the second magnetic switch MS2 is turned on, and energy is transferred to the second inductor L2 (loop inductor) to provide the reverse pumping current for the semiconductor cut-off switch SOS, and when the reverse pumping current reaches the peak value, the semiconductor cut-off switch SOS is turned off and can be released to the load, and ultra-narrow pulse output is formed.
In some embodiments, the transformer adopts an iron-based nanocrystalline magnetic core, and the iron-based nanocrystalline magnetic core has the advantages of large saturation magnetic flux, small volume and high coupling efficiency, and the primary coil adopts a single-turn winding. Wherein, the transformation ratio n of the transformer is 1:20, the third capacitor connected to the secondary side of the transformer may reach a voltage of 10 kv, and then by selecting appropriate dimensions and released circuit parameters, the third capacitor C3 and the fourth capacitor C4 may be core saturated at the end of charging. To ensure maximum transmission efficiency, the following relationships between the voltages of the second capacitor C2, the third capacitor C3, the fourth capacitor C4 and the fifth capacitor C5 need to be satisfied:
C1＝2n 2 c2 C2=c3=c4, where n is the transformer ratio of the transformer.
In some embodiments, the third capacitor C3, the fourth capacitor C4 and the fifth capacitor C5 adopt high-voltage ceramic chip capacitors, and reduce parasitic inductance in a multiple parallel manner.
The first magnetic switch MS1 and the second magnetic switch MS2 form a two-stage magnetic compression circuit, a pulse with a pulse width of 200 nanoseconds can be obtained after the compression of the first magnetic switch MS1, and a pulse with a pulse width of 30-40 nanoseconds can be obtained after the two-stage compression.
In some embodiments, the first magnetic switch MS1 and the second magnetic switch MS2 are both ferrite, and the winding of the first magnetic switch MS1 uses a plurality of high-voltage silica gel wires connected in parallel to reduce inductance. The second magnetic switch MS2 is formed by a single-turn winding and a large-volume magnetic ring, and comprises a magnetic ring and a copper rod with a larger sectional area, and the copper rod is arranged on the magnetic ring in a penetrating manner, so that the inductance of the second magnetic switch MS2 can be effectively reduced, as shown in fig. 5.
In some embodiments, the pump current can be adjusted by adjusting the parameters of the first magnetic switch MS1 and the second magnetic switch MS2, so that different cut-off time and output voltage of the semiconductor cut-off switch can be obtained, wherein the reverse cut-off current can reach 500 amperes.
Wherein the pulse leading edge of the outputted ultra-narrow pulse is related to the off time of the semiconductor on-off switch SOS, and the pulse trailing edge (97% -3%) of the ultra-narrow pulse satisfies the following expression:
where L represents the sum of the inductances of the reverse pump loop. The pump current period, amplitude and loop inductance (i.e., second inductance L2) are related to the loop capacitance (i.e., fifth capacitance C5).
The forward pumping time satisfies the following expression:
wherein L is + And C + Representing the sum of the forward pump loop inductances and the sum of the forward pump loop capacitances, respectively.
The reverse pumping time satisfies the following expression:
wherein L is － And C － Representing the sum of the reverse pump loop inductances and the sum of the reverse pump loop capacitances, respectively.
The pump peak current satisfies the following expression:
wherein U represents the voltage across the core of the transformer, L represents the sum of the reverse pumping loop inductances, and C represents the sum of the reverse pumping loop capacitances.
The voltage across the transformer (saturation) and the magnetic switches (first magnetic switch MS1 and second magnetic switch MS 2) is related to the size and number of turns, and the volt-second product balance formula needs to be satisfied:
∫Udt＝NSΔB；
wherein U is the voltage at two ends of the magnetic core of the transformer, N is the number of windings, S is the effective sectional area of the magnetic core, and DeltaB is the magnetic flux variation, so that the relevant parameters of the magnetic switch can be obtained according to the required voltage and the magnetic core material.
Wherein, the magnetic core saturation inductance satisfies the following expression:
wherein r is o 、r i Mu, the inner diameter and the outer diameter of the magnetic core s And h is the magnetic core height.
In the technical scheme, the pulse is generated by adopting the two-stage magnetic compression circuit, the circuit topology structure is simple, the magnetic element can be automatically reset without externally adding a magnetic core reset circuit, the magnetic element is all-solid, small in size and not easy to damage, and the front-stage charging voltage is reduced, so that the cost of a charging power supply and a semiconductor switch can be reduced.
With continued reference to fig. 1 and 4, in a further implementation of an embodiment, the high voltage pulse power supply further includes: the waveform optimizing module 600 is connected with the semiconductor circuit breaker module 400 and the load 500 respectively, and is used for adjusting the pre-pulse, the rising time and the flat-top time of the ultra-narrow pulse.
Specifically, some devices have requirements on the amplitude and width of the output pulse, and strict requirements on the rising, falling and flat-top time of the output pulse, and the pulse generated by the semiconductor cut-off switch SOS is irregular, so that the waveform of the output pulse needs to be optimized.
The present utility model provides a waveform optimization module between the semiconductor breaking switch SOS and the load 500, and the waveform optimization module 600 includes: ferrite bead 610 and sixth capacitance C6. One end (inner conductor) of the ferrite bead 610 is connected to the semiconductor breaking switch SOS, the other end of the ferrite bead 610 is connected to the sixth capacitor C6 and the load (e.g., a resistor R of 50Ω), the sixth capacitor C6 is connected in parallel to the load, and the outer conductor is grounded.
The pulse generated by the semiconductor cut-off switch SOS is released to the load through the ferrite bead 610, the inner and outer conductors of the ferrite bead 610 form a 50Ω coaxial structure and are matched with the impedance of the load 500 of 50Ω, and the ferrite bead 610 can reduce the pre-pulse and steepening rising edge of the load, as shown in fig. 6 a; in addition, the flat top width of the pulse can be optimized by connecting a sixth capacitor C6, which is suitably placed across the load 500, as shown in fig. 6 b. Therefore, the utility model can select proper parameters for optimization according to the shape and the requirement of the actual pulse, for example, the size and the number of the magnetic cores can be adjusted, and the accommodation of the sixth capacitor C6 can be adjusted to achieve the optimal output effect.
Furthermore, in order to reduce loop parasitic parameters and enable the structure of the whole high-voltage pulse power supply to be more compact, the utility model adopts a large-area copper plate as the ground. When the front stage charging voltage is 350V, a 15kV pulse with a bottom width of 10ns can be formed on the load, as shown in fig. 7.
In order to better implement the present utility model, please refer to fig. 8, the present utility model further provides an ultra-narrow pulse output method of the high voltage pulse power supply, which includes the steps of:
s100, charging the resonant charging module, and discharging the primary side of the transformer after the resonant charging module is charged; in particular, the embodiment of the high-voltage pulse power supply is described in detail herein, and will not be described in detail herein.
S200, when the primary side of the transformer is discharged by the resonance charging module, the secondary side of the transformer is charged by the secondary magnetic switch compression module; in particular, the embodiment of the high-voltage pulse power supply is described in detail herein, and will not be described in detail herein.
And S300, after the transformer is saturated, the two-stage magnetic switch compression module provides forward pumping current and reverse pumping current for the semiconductor circuit breaker module, and when the reverse pumping current reaches a peak value, energy is released to a load to form ultra-narrow pulse. In particular, the embodiment of the high-voltage pulse power supply is described in detail herein, and will not be described in detail herein.
In summary, the high-voltage pulse power supply and the ultra-narrow pulse output method thereof provided by the utility model have the following beneficial effects:
the pulse can be compressed to tens of nanoseconds by adopting the two-level magnetic switch compression module, so that the rapid turn-off of tens of nanoseconds is realized, the peak current can reach hundreds to thousands of amperes, the voltage can reach tens of kilovolts, and the pulse width is smaller than 10ns, thereby outputting high-voltage ultra-narrow pulse at a load;
the pulse is generated by adopting the two-stage magnetic compression circuit, the circuit topology structure is simple, the magnetic element can be automatically reset without adding a magnetic core reset circuit, and the magnetic element is full-solid, small in size and not easy to damage;
the front-stage charging voltage is reduced, so that the cost of a charging power supply and a semiconductor switch can be reduced;
parameters such as pre-pulse, rising time, flat-top time and the like of the output pulse can be optimized according to the actual pulse shape and requirements.
It is to be understood that the utility model is not limited in its application to the examples described above, but is capable of modification and variation in light of the above teachings by those skilled in the art, and that all such modifications and variations are intended to be included within the scope of the appended claims.
Claims (9)
1. A high voltage pulsed power supply comprising: the device comprises a resonance charging module, a transformer, a secondary magnetic switch compression module, a semiconductor circuit breaker module and a load; wherein,,
the resonance charging module is connected with the primary side of the transformer and is used for discharging the primary side of the transformer after charging is completed;
the secondary side of the transformer is connected with the secondary magnetic switch compression module and is used for charging the secondary magnetic switch compression module;
the secondary magnetic switch compression module is respectively connected with the transformer and the semiconductor circuit breaker module and is used for providing forward pumping current and reverse pumping current for the semiconductor circuit breaker module;
the semiconductor circuit breaker module is respectively connected with the secondary magnetic switch compression module and the load and is used for releasing energy to the load and forming ultra-narrow pulses.
2. The high voltage pulsed power supply of claim 1, further comprising: the waveform optimization module is connected with the semiconductor circuit breaker module and the load respectively and used for adjusting the pre-pulse, the rising time and the flat-top time of the ultra-narrow pulse.
3. The high voltage pulsed power supply of claim 1, wherein the resonant charging module comprises: the device comprises a direct current power supply, a first capacitor, a first inductor, a first transistor, a second transistor, a driving unit and a second capacitor; wherein,,
one end of the first capacitor is connected with the direct current power supply and one end of the first inductor respectively, and the other end of the first capacitor is grounded;
the other end of the first inductor is connected with the emitter of the first transistor;
the drain electrode of the first transistor is connected with one end of the second capacitor, and the grid electrode of the first transistor is connected with the driving unit;
the other end of the second capacitor is connected with the primary side of the transformer;
the emitter of the second transistor is connected with one end of the second capacitor, the drain of the second transistor is connected with the primary side of the transformer, and the grid of the second transistor is connected with the driving unit.
4. The high voltage pulsed power supply of claim 1, wherein the secondary magnetic switch compression module comprises: the third capacitor, the fourth capacitor, the fifth capacitor, the first magnetic switch and the second magnetic switch; wherein,,
one end of the third capacitor is connected with the secondary side of the transformer and one end of the fourth capacitor respectively, and the other end of the third capacitor is connected with the secondary side of the transformer and one end of the second magnetic switch respectively;
the other end of the fourth capacitor is connected with one end of the first magnetic switch;
the other end of the first magnetic switch is connected with the other end of the second magnetic switch and one end of the fifth capacitor respectively;
the other end of the fifth capacitor is connected with the semiconductor circuit breaker module;
one end of the second magnetic switch is also connected with the semiconductor circuit breaker module.
5. The high voltage pulsed power supply of claim 4, wherein the semiconductor cut-out switch module comprises: a semiconductor cut-off switch and a second inductor; wherein,,
the positive electrode of the semiconductor cut-off switch is respectively connected with one end of the second magnetic switch and the load, and the negative electrode of the semiconductor cut-off switch is respectively connected with one end of the second inductor and the load;
the other end of the second inductor is connected with the fifth capacitor.
6. The high voltage pulsed power supply of claim 2, wherein the waveform optimization module comprises: ferrite magnetic ring and sixth electric capacity; wherein,,
one end of the ferrite magnetic ring is connected with the semiconductor circuit breaker module, and the other end of the ferrite magnetic ring is connected with the sixth capacitor and the load respectively;
the sixth capacitor is connected in parallel with the load.
7. The high voltage pulsed power supply of claim 4, wherein the second magnetic switch comprises: the magnetic ring and the copper rod; wherein, the bar copper wears to locate the magnetic ring.
8. The high voltage pulsed power supply of claim 3, wherein the first transistor and the second transistor are both insulated gate bipolar transistors.
9. A high voltage pulsed power supply according to claim 3, characterized in that the drive unit comprises: a two-way driving circuit and an isolation transformer; wherein,,
the two-way driving circuit is respectively connected with the primary side of the isolation transformer and the grid electrode of the second transistor;
the secondary side of the isolation transformer is connected with the gate of the first transistor.
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