CN219832513U - Overheat protection device based on phase change material switch - Google Patents
Overheat protection device based on phase change material switch Download PDFInfo
- Publication number
- CN219832513U CN219832513U CN202320662222.4U CN202320662222U CN219832513U CN 219832513 U CN219832513 U CN 219832513U CN 202320662222 U CN202320662222 U CN 202320662222U CN 219832513 U CN219832513 U CN 219832513U
- Authority
- CN
- China
- Prior art keywords
- layer
- phase change
- change material
- material switch
- semiconductor refrigerator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000012782 phase change material Substances 0.000 title claims abstract description 75
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 238000010030 laminating Methods 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims 2
- 230000008859 change Effects 0.000 description 17
- 238000001816 cooling Methods 0.000 description 11
- 239000013078 crystal Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 7
- 230000007704 transition Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000008358 core component Substances 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 description 2
- 230000005679 Peltier effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/14—Thermal energy storage
Landscapes
- Devices That Are Associated With Refrigeration Equipment (AREA)
Abstract
The utility model relates to the field of temperature control, and provides an overheat protection device based on a phase change material switch, which comprises: a heat conducting layer, a phase change material switch and a semiconductor refrigerator; the phase change material switch is formed by sequentially laminating a first circuit connecting layer, a phase change material layer, a metal basal layer and a second circuit connecting layer; the semiconductor refrigerator includes: the semiconductor unit is provided with a heating layer at the top, a radiating fin is arranged at the outer side of the heating layer, and a refrigerating layer is arranged at the bottom of the semiconductor unit; the second circuit connecting layer and the cold layer are arranged on the surface of the heat conducting layer; the phase change material switch and the semiconductor refrigerator are connected in series through a lead. When the temperature exceeds the threshold value, the phase change material switch is turned on, and the semiconductor refrigerator cools the target equipment through heat conduction. The device has less hardware, simple structure, stable operation, safety and reliability, and avoids the problems of heating, damage and the like caused by long-time operation of the semiconductor refrigerator.
Description
Technical Field
The device relates to the field of intelligent switches and temperature control, in particular to an automatic on-off switch formed by phase change materials and an overheat protection device of a device chip.
Background
With the rapid development of modern industry, each electronic device has more and more functions and higher processing speed, and the power consumption of each electronic device has also become larger. In the case of personal computers or other industrial personal computers, the processor chip, as a core component thereof, generates a large amount of heat during use, especially outdoors in summer. If not handled in time, the internal structure of the chip is endangered, and safety accidents are caused, so that heat dissipation protection and temperature control become important links in equipment manufacturing. The existing heat dissipation device is basically divided into fin heat dissipation, water cooling heat dissipation, air cooling heat dissipation and the like, when the equipment is started, the power supply is turned on and simultaneously starts to work, the working efficiency is low, unnecessary electric energy is easy to consume in the standby process of the equipment, the resource waste is caused, and the energy conservation and the green development are not met.
Currently, a phase change material is a substance that changes its state while providing latent heat due to a change in temperature. For the homogeneity of the material throughout, a constant atomic structure morphology is defined that constitutes the phase of the material. The energy change is accompanied by a phase change of the material, and the change of the system energy in the process causes the atomic structure of the material to change, which is called phase change. The most widely available phase-change material is vanadium dioxide VO 2 And Ge (Ge) 2 Sb 2 Te (GST) materials have a strong correlation between orbital, spin and lattice degrees of freedom. Moderate external stimuli can switch phase change materials (e.g., VO) through non-congruent electrons (from insulating to metallic) and structural phase changes 2 ) Is a state of (2). When VO 2 When heated, this insulator-to-metal transition occurs near the critical temperature of 68 ℃. In the phase change process, hysteresis response exists, namely the phase change temperature points in the temperature rising process and the temperature reducing process are different, the phase change temperature in the temperature rising process is higher, and the value is between several and tens ofThe degrees celsius are not equal. Such changes in conductivity and hysteresis can then be used as a circuit switch.
The semiconductor refrigerator is a device for preparing cold by using the thermoelectric effect of a semiconductor, and mainly uses the peltier effect, and when a power supply is turned on, the temperature at one end is increased, and the temperature at the other end is decreased. The semiconductor refrigerator used in the market at present can realize rapid refrigeration and heating, but cannot be used for a long time due to obvious heating, otherwise, the semiconductor refrigerator has a certain influence on the working life of the semiconductor refrigerator.
Disclosure of Invention
In order to solve the problems of over-high working temperature, over-fast aging of chips and larger hardware damage of the existing electronic equipment, the utility model provides an overheat protection device based on a phase change material switch, which adopts the following technical scheme:
an overheat protection device based on a phase change material switch, comprising: a heat conducting layer, a phase change material switch and a semiconductor refrigerator; the phase change material switch is formed by sequentially laminating a first circuit connecting layer, a phase change material layer, a metal basal layer and a second circuit connecting layer; the semiconductor refrigerator includes: the semiconductor unit is provided with a heating layer at the top, a radiating fin is arranged at the outer side of the heating layer, and a refrigerating layer is arranged at the bottom of the semiconductor unit; the second circuit connecting layer and the refrigerating layer are arranged on the surface of the heat conducting layer; the phase change material switch and the semiconductor refrigerator are connected in series through a lead.
The phase change material switch comprises a first circuit connecting layer and a second circuit connecting layer, wherein the first circuit connecting layer and the second circuit connecting layer are used for connecting the switch with a circuit wire, the phase change material layer and a metal basal layer are arranged in the middle of the phase change material layer, and the on-off condition of the phase change material layer is changed under the influence of temperature; the semiconductor refrigerator is added with the heat conduction layer and the radiating fin on the basis of the original heating layer, the semiconductor unit (TE) and the refrigerating layer, and the radiating fin can increase the radiating efficiency of the heating layer. When the phase-change material switch-based overheat protection device is used, the heat conducting layer is attached to target equipment such as a processor chip, the overheat protection device based on the phase-change material switch is connected with a power supply to form an electric loop, when the target equipment starts to work, a large amount of heat is generated inside the overheat protection device and causes temperature rise, when the temperature exceeds the phase-change threshold temperature of the phase-change material layer, the heat is transferred to the phase-change material layer through the heat conducting layer, the phase-change material layer is subjected to phase change, the insulating state of the phase-change material layer is converted into a conductive metal state, the phase-change material switch is conducted, and the semiconductor refrigerator cools the target equipment through the heat conduction effect. When the semiconductor refrigerator works, the temperature of the refrigerating section can reach about 0 ℃, so that the cooling can be completed in a short time. During cooling, the final device chip will cool to a state away from the threshold temperature due to the hysteresis of the phase change material. When the temperature is lower than the phase change threshold temperature of the phase change material layer, the phase change material layer is changed from the conductive metal state to the insulating state, the phase change material switch is disconnected, and the semiconductor refrigerator stops working, so that overheat protection is achieved, and the aim of automatic cooling is fulfilled.
The preferable scheme is as follows:
further comprises: the fan is connected with the phase change material switch and the semiconductor refrigerator in series through wires. The fan increases the surface air circulation rate, takes away excessive heat, and plays roles in protecting and increasing cooling efficiency.
Further, a warning lamp device is also arranged. If the temperature is higher than the threshold temperature, after the circuit is communicated, the warning lamp becomes bright, so that a user is reminded of the running condition of the equipment at the moment, and the overall safety is further improved.
Automatic intelligent on-off, green economy: the device adopts the phase-change material layer to switch the cooling circuit, when the equipment processor chip generates a large amount of waste heat to cause temperature rise and has potential safety hazard due to the operation, the phase-change material switch is automatically opened and automatically turned off after cooling, so that the semiconductor refrigerator can work in a certain time section, and the purpose of cooling the equipment is achieved. The device has less hardware, simple structure, stable operation, safety and reliability, and avoids the problems of heating, damage and the like caused by long-time operation of the semiconductor refrigerator.
Multiple temperature threshold setting: the protection threshold temperature of the device can be changed by changing the material types (doping tungsten and nitrogen with different proportions) of the phase change material layer, so that the device can be ensured to work under a certain temperature.
Drawings
Fig. 1: a schematic diagram of an overheat protection device based on a phase change material switch in the first embodiment;
fig. 2: is a schematic cross-section of a phase change material switch;
fig. 3: is a schematic cross-section of a semiconductor refrigerator;
fig. 4: is a hysteresis curve schematic diagram of the phase change material;
wherein: 1 is a chip 1 to be protected, 2 is a phase change material switch, 3 is a semiconductor refrigerator, 4 is a power supply, 5 is a fan, 61 is a first circuit connecting layer, 62 is a second circuit connecting layer, 7 is a phase change material layer, 8 is a metal base layer, 9 is a heat conducting layer, 10 is a refrigerating layer, 11 is a semiconductor unit, 12 is a heating layer, 13 is a radiating fin, and 14 is a warning lamp.
Detailed Description
In order to make the objects, technical solutions and advantages of the present utility model more apparent, the present utility model will be further described in detail with reference to the accompanying drawings. Hereinafter, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", etc. may explicitly or implicitly include one or more such feature. In the description of the present utility model, unless otherwise indicated, the meaning of "a number" is two or more.
Example 1
An overheat protection device based on a phase change material switch, as shown in fig. 1 to 3, comprises: a heat conducting layer 9, a phase change material switch 2 and a semiconductor refrigerator 3; the phase change material switch comprises: the phase change material layer 7 and the metal basal layer 8, the phase change material layer 7 is arranged on the top surface of the metal basal layer 8, the top surface of the phase change material layer 7 and the bottom surface of the metal basal layer are respectively provided with a first circuit connection layer 61 and a second circuit connection layer 62, and the first circuit connection layer 61 and the second circuit connection layer 62 are respectively terminals of a phase change material switch; the semiconductor refrigerator includes: the semiconductor unit 11, the top of the semiconductor unit is provided with a heating layer 12, the outer side of the heating layer is provided with a radiating fin 13, the bottom of the semiconductor unit is provided with a refrigerating layer 10, and the heating layer 12 and the refrigerating layer 10 are the wiring terminals of the semiconductor unit respectively; the second circuit connection layer 62 and the refrigerating layer 10 are arranged on the surface of the heat conducting layer 9;
one of the terminals of the phase change material switch and one of the terminals of the semiconductor refrigerator are connected in series by a wire.
In at least one application scenario, the electric power supply device further comprises a power supply 4, a fan 5 and a warning lamp 14, wherein the power supply, the fan, the warning lamp, the phase change material switch and the semiconductor refrigerator are connected in series through wires to form an electric loop.
In at least one application scenario, the phase-change material layer 7 selects VO 2 The threshold temperature is set at 68 ℃.
The phase change material switch 2, the semiconductor refrigerator 3 and the heat conduction layer 9 are fixedly connected through the diamond micro-nano particle doped gold conductive adhesive. The gold conductive adhesive has good electric conductivity and heat conductivity, wherein the doped diamond micro-nano particles have good heat dissipation performance.
When in use, the heat conduction layer 9 of the overheat protection device based on the phase change material switch is attached to the surface of the chip 1 to be protected, and the temperature control work flow is as follows: when the device starts to work and the temperature of the chip to be protected rises and exceeds the threshold temperature, for example, after the threshold temperature reaches 68 ℃, the phase change material layer 7 in the phase change material switch 2 is heated to generate phase change, the phase change material layer is converted into a metal conductive state from an insulating state, a circuit is connected, the warning lamp 14 is lighted, and a high-temperature warning is made. Meanwhile, the semiconductor refrigerator 3 and the fan 5 provide a cooling function and a heat dissipation effect under the action of the power supply 4. The temperature gradually decreases until the temperature reaches the temperature reduction phase transition temperature of 60 ℃. Thus, one cycle of overheat protection is completed.
The working principle is as follows:
a phase change material is a material that can undergo a stable, reversible transition between different phases, with a large difference in electrical or optical properties. Wherein the phase transition temperature of vanadium dioxide is 68 ℃, and the phase transition temperature can be changed by doping tungsten element; whereas GST materials have two phases in the phase change process: the amorphous state-cubic crystal state and the cubic crystal state-hexagonal crystal state have small difference in resistance, and the phase change temperature of the amorphous state-cubic crystal state and the cubic crystal state-hexagonal crystal state can be changed by doping N, C and other elements, so that the phase change threshold value of the amorphous state-cubic crystal state and the cubic crystal state-hexagonal crystal state is between room temperature and 375 ℃, and therefore, the amorphous state-cubic crystal state-hexagonal crystal state has a large temperature range in the aspect of overheat protection. In the phase change process, hysteresis response exists, as shown in fig. 4, and the phase change temperature in the heating and cooling processes is inconsistent under the influence of hysteresis curves.
Example two
On the basis of the first embodiment, the overheat protection device based on the phase change material switch is further provided with a buzzer alarm. Further enhancing the overtemperature safety prompt.
Example III
On the basis of the first embodiment, when the temperature resistance of the device chip or other core components is higher, an N-GST material may be used as the phase change material layer 7, and the threshold temperature thereof may reach more than 100 ℃.
Claims (6)
1. An overheat protection device based on a phase change material switch, characterized by comprising: a heat conducting layer, a phase change material switch and a semiconductor refrigerator; the phase change material switch is formed by sequentially laminating a first circuit connecting layer, a phase change material layer, a metal basal layer and a second circuit connecting layer; the semiconductor refrigerator includes: the semiconductor unit is provided with a heating layer at the top, a radiating fin is arranged at the outer side of the heating layer, and a refrigerating layer is arranged at the bottom of the semiconductor unit; the second circuit connecting layer and the refrigerating layer are arranged on the surface of the heat conducting layer; the phase change material switch and the semiconductor refrigerator are connected in series through a lead.
2. The overheat protection device based on a phase change material switch of claim 1, wherein: the phase change material layer is arranged on the top surface of the metal substrate layer, the top surface of the phase change material layer and the bottom surface of the metal substrate layer are respectively provided with a first circuit connecting layer and a second circuit connecting layer, and the first circuit connecting layer and the second circuit connecting layer are respectively terminals of the phase change material switch; the heating layer and the refrigerating layer in the semiconductor unit are terminals of the semiconductor unit respectively; one of the terminals of the phase change material switch and one of the terminals of the semiconductor refrigerator are connected in series by a wire.
3. The overheat protection device based on a phase change material switch of claim 1, wherein: the semiconductor refrigerator also comprises a fan, wherein the fan is connected with the phase change material switch and the semiconductor refrigerator in series through wires.
4. The overheat protection device based on a phase change material switch of claim 3, wherein: and a warning lamp device is also arranged.
5. Overheat protection device based on phase change material switches according to one of claims 1 to 4, characterized in that: also includes a power source.
6. The overheat protection device based on a phase change material switch of claim 1, wherein: a buzzer alarm is also provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320662222.4U CN219832513U (en) | 2023-03-30 | 2023-03-30 | Overheat protection device based on phase change material switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320662222.4U CN219832513U (en) | 2023-03-30 | 2023-03-30 | Overheat protection device based on phase change material switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219832513U true CN219832513U (en) | 2023-10-13 |
Family
ID=88245001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320662222.4U Active CN219832513U (en) | 2023-03-30 | 2023-03-30 | Overheat protection device based on phase change material switch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219832513U (en) |
-
2023
- 2023-03-30 CN CN202320662222.4U patent/CN219832513U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Adams et al. | Active peltier coolers based on correlated and magnon-drag metals | |
| CN2831423Y (en) | Active radiator of large-scale integrated chip | |
| CN107959090A (en) | A kind of power battery thermal management system | |
| WO2015176353A1 (en) | Cooling circuit and terminal and terminal refrigeration method | |
| CN201285762Y (en) | Electronic heat radiation apparatus based on phase change energy accumulation nano capsule | |
| CN203522288U (en) | Charger | |
| CN219832513U (en) | Overheat protection device based on phase change material switch | |
| CN109545950A (en) | Thermoelectric radiating device and its cooling system | |
| Huang et al. | Design of a small temperature control system based on TEC | |
| CN111124003A (en) | Cooling system and method for power module and computer readable storage medium | |
| WO2014180368A1 (en) | Terminal heat-dissipation system and method | |
| WO2018053705A1 (en) | Rechargeable battery | |
| CN113555492A (en) | Electronic waste heat collecting device and control method thereof | |
| CN202257426U (en) | Semi-conductor refrigeration notebook computer radiator | |
| JP2004221409A (en) | Peltier module device | |
| CN104427090A (en) | Mobile terminal device and liquid-state metal heat dissipation method thereof | |
| CN203366215U (en) | Industrial personnel computer hard disk constant temperature protection system | |
| CN203105035U (en) | Semiconductor heat radiation device applied to photovoltaic controller | |
| CN212460507U (en) | Pluggable heat dissipation system | |
| CN104009149A (en) | Semiconductor refrigeration device and manufacturing method thereof | |
| CN210112085U (en) | Intelligent temperature control mobile phone shell | |
| CN101019218A (en) | Semiconductor cooling system and process for manufacturing the same | |
| CN209747557U (en) | Semiconductor device and temperature control device | |
| CN207234693U (en) | A kind of ultra-magnetic deformation actuator with semiconductor refrigerating radiator | |
| CN215528894U (en) | Self-generating type dual-purpose cushion for heat preservation and refrigeration |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |