CN219831454U - Hybrid assembly optical module of TSV structure silicon photon intermediate layer - Google Patents
Hybrid assembly optical module of TSV structure silicon photon intermediate layer Download PDFInfo
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- CN219831454U CN219831454U CN202321302784.4U CN202321302784U CN219831454U CN 219831454 U CN219831454 U CN 219831454U CN 202321302784 U CN202321302784 U CN 202321302784U CN 219831454 U CN219831454 U CN 219831454U
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Abstract
The utility model belongs to the field of optical modules, and discloses a hybrid assembly optical module of a TSV structure silicon photon intermediate layer, which comprises a PCB layer positioned at the bottom layer of the optical module and used for providing mechanical support and electrical connection functions; a first packaging substrate is welded on the PCB layer, and an exchange integrated circuit module is welded above the first packaging substrate; the switching integrated circuit module includes: the mixed assembly optical module of the TSV structure silicon photon intermediate layer has wide application prospect. The method can be applied to the fields of data centers, communication networks, optical fiber communication, optical sensing and the like, and meets the communication requirements of high speed, high bandwidth and low power consumption. The design and manufacturing method of the optical module has certain innovation and practicability and has potential of commercialization and industrialization.
Description
Technical Field
The utility model relates to the field of optical modules, in particular to a hybrid assembly optical module of a TSV structure silicon photon intermediate layer.
Background
With the increasing demand for communication and data transmission, optical communication and photonic integration techniques have gained widespread attention and application. Silicon photonics, which is an optical integration technology based on silicon materials, has the advantages of high integration level, low power consumption, high-speed transmission and the like, is considered as one of key technologies for realizing high-performance optical communication.
However, the conventional silicon photon technology generally adopts an optical fiber to connect a silicon optical chip, and the external connection mode has the problems of coupling loss, high alignment precision requirement, complex packaging and the like. To overcome these problems, hybrid assembled optical modules of silicon photonics intermediaries of TSV (Through-silicon via) structures have been developed.
The hybrid assembly optical module of the TSV structure silicon photonics interposer is a device integrating optical and electronic functions, and by introducing vertical through-hole (TSV) technology into the silicon chip, direct interconnection and coupling between the silicon photonics chip and the package substrate are realized. The module combines the high integration of silicon photonics and the flexibility of packaging technology, and provides a high-performance and high-reliability solution for an optical communication system.
In a hybrid assembled optical module of a TSV structure silicon photonics interposer, PCB layer (PrintedCircuit Board) provides electronic functionality and electrical connections, the silicon photonics interposer enables integration of optics and transmission of optical signals, and the package substrate provides structural support and environmental protection. Through the combination of the TSV passing through the through silicon via, the DRV differential receiving amplifier, the TIA turning current amplifier, the optical fiber array, the exchange integrated circuit module and other components, the input, output and processing of the optical signals are realized.
The hybrid assembly optical module of the TSV structure silicon photon intermediate layer has higher integration level, lower coupling loss, optimized packaging compactness and good heat management capability. The method has wide application prospect in the fields of optical communication, data centers, optical interconnection and photon integration, and has important significance for improving the performance and expandability of a communication system. Through further research and development, the mixed-assembly optical module of the TSV structure silicon photon intermediate layer is expected to play an important role in the future optical communication field.
With the continued development of optical communication and optoelectronic interconnect technologies, there is an increasing demand for efficient, compact, and low power optical modules. The conventional optical module generally has the problems of low optical signal transmission efficiency, high power consumption, high cost and the like.
Disclosure of Invention
The present utility model is intended to provide solutions to existing problems.
In order to achieve the above purpose, the present utility model provides the following technical solutions: a hybrid assembled optical module of TSV structured silicon photonics intermediaries, comprising:
the PCB layer is positioned at the bottom layer of the optical module and used for providing mechanical support and electrical connection functions and providing mechanical support and electrical interfaces;
a first packaging substrate is welded on the PCB layer, and an exchange integrated circuit module is welded above the first packaging substrate;
the switching integrated circuit module includes:
a second package substrate, located above the first package substrate, for supporting and packaging the optical and electronic components;
the silicon photon medium layer is positioned above the second packaging substrate and is made of silicon-based materials, and optical and electronic functions are integrated;
the TSVs pass through the through silicon vias, and vertical through hole structures are prepared in the silicon photon interposer for optical signal transmission and interconnection;
a DRV differential receiving amplifier, which is positioned in the area above the TSV through silicon via through silicon photon medium layer and is used for amplifying weak current of optical signals;
the TIA turns over the current amplifier, the TSV passes through the silicon through hole and passes through the area above the silicon photon medium layer, is used for converting the conversion current of the light receiver into the voltage signal;
an optical fiber array on top of the silicon photonic interposer for connecting the optical device to an external optical fiber system.
Preferably, the TSV penetrates through the through-silicon-via and is internally provided with a seed layer, the outer side of the seed layer is provided with a diffusion barrier layer, the outer side of the diffusion barrier layer is provided with an adhesion layer, and the outer side of the adhesion layer is provided with an insulating layer.
Preferably, a metal bump a is arranged above the TSV passing through the through silicon via, a rewiring layer is arranged below the TSV passing through the through silicon via, a passivation layer and a metal bump b are arranged on the outer side of the rewiring layer, and the metal bump b is embedded in the passivation layer.
Preferably, the seed layer is a uniform layer of conductive material.
Preferably, the PCB layer includes a substrate layer made of an insulating material, on which a wire layer and an insulating material layer for preventing a wire from being shorted between the wire layers are disposed.
Preferably, the shape of the through silicon via may be a circular or square via shape.
Compared with the prior art, the technical scheme has the beneficial effects that:
by integrating multiple optical and electronic components in a silicon photonic interposer, a highly integrated optical function is achieved. The components are interconnected through the TSVs, so that the length and complexity of lines on the circuit board are reduced, and the signal transmission efficiency is improved.
By adopting the silicon photon intermediate layer and the integrated optical device, low energy consumption can be realized in the transmission and processing process of the optical signals. In addition, the DRV differential receiving amplifier and the TIA turning current amplifier have the advantages that the receiving and amplifying efficiency of the optical signals is higher, and the power consumption is further reduced.
The manufacturing cost is relatively low due to the adoption of silicon-based materials and the hybrid assembly technology. The process of fabricating the TSVs through the through-silicon vias is also relatively simplified, reducing manufacturing costs and time. Meanwhile, through the design of high integration level and low power consumption, the overall cost of the optical module is reduced.
The design and layout of the optical fiber array are optimized, so that efficient optical coupling and transmission can be realized. The exchange integrated circuit module has high-speed data processing capability, can realize the switching and routing of multichannel optical signals, and meets the complex optical communication requirements.
The shape and size of the TSVs passing through the through-silicon vias may be tailored to optimize optical performance and interconnect efficiency according to the specific application requirements. The structure and the function of the optical module can be adjusted and expanded according to different application scenes, and a flexible solution is provided.
Drawings
FIG. 1 is a schematic diagram of a structure provided by the present utility model;
fig. 2 is a schematic view of a TSV through-silicon via structure provided in the present utility model;
fig. 3 is a schematic diagram of a substrate layer structure according to the present utility model.
Reference numerals: 1. a PCB layer; 2. a silicon photonic interposer; 3. a first package substrate; 4. the TSV passes through the through silicon via; 5. a DRV differential receiving amplifier; 6. TIA turning over the current amplifier; 7. an optical fiber array; 8. exchanging the integrated circuit module; 9. a second package substrate; 10. a seed layer; 11. a diffusion barrier layer; 12. an adhesive layer; 13. an insulating layer; 14. a metal bump a; 15. a rewiring layer; 16. a passivation layer; 17. a metal bump b; 18. a substrate layer; 19. a wire layer; 20. and an insulating material layer.
Detailed Description
The utility model is described in further detail below with reference to the attached drawings and embodiments:
the specific implementation process is as follows:
referring to fig. 1-3, a hybrid assembly optical module of a TSV structure silicon photonics interposer 2 includes:
a PCB layer 1 located at the bottom layer of the optical module for providing mechanical support and electrical connection functions;
a first packaging substrate 3 is welded on the PCB layer 1, and an exchange integrated circuit module 8 is welded above the first packaging substrate 3; the switch integrated circuit module 8 has high-speed data processing capability and can realize the switching and routing functions of multichannel optical signals. By switching the integrated circuit module 8, the transmission paths and destinations of the optical signals can be flexibly controlled, enabling complex optical communication and interconnection applications.
The switching integrated circuit module 8 includes:
a second package substrate 9 located above the first package substrate 3 for supporting and packaging optical and electronic components; the package substrate has good thermal management properties and provides mechanical support and electrical interfaces to ensure stability and reliability of the optical module.
The silicon photonics interposer 2, which is located above the second package substrate 9, is made of silicon-based material and integrates optical and electronic functions. The silicon photonics interposer 2 has an optical waveguide structure for enabling transmission and coupling of optical signals. The silicon photonics interposer 2 may also be hybrid assembled with other optical materials to achieve more complex optical functions.
The TSVs pass through the through silicon vias 4, vertical through hole structures fabricated in the silicon photonics interposer 2 for optical signal transmission and interconnection; TSVs through the through-silicon vias 4 may connect different layers and functional blocks inside the silicon photonic interposer 2 to enable transmission and exchange of optical signals to optimize optical performance and interconnection efficiency.
A DRV differential receiving amplifier 5 located in the region above the TSV through the through-silicon via 4 through the silicon photonics interposer 2 for amplifying weak currents of the optical signal; the DRV differential receiving amplifier 5 adopts a differential amplifying circuit structure, and can improve the receiving sensitivity and the anti-interference capability to ensure accurate and reliable optical signal reception.
TIA turning current amplifier 6, tsv passes through-silicon via 4 and through the area above silicon photonics interposer 2, for converting the converted current of the optical receiver into voltage signal; TIA turning current amplifier 6 has the function of converting current to voltage and provides signal amplification and enhancement capabilities for further processing and parsing of the optical signal.
An optical fiber array 7, located on top of the silicon photonics interposer 2, is used to connect the optics with an external optical fiber system. The optical fiber array 7 realizes input and output of optical signals by coupling the optical signals into optical fibers. The design and layout of the fiber array 7 can be optimized for efficient optical coupling and transmission depending on the application requirements.
In fig. 1 a schematic cross-section of an optical module is shown showing the arrangement and connection of PCB layer 1, silicon photonic interposer 2, package substrate and optical and electronic components. The TSVs connect different layers and functional modules through the through silicon vias 4, enabling transmission and interconnection of optical signals. The DRV differential receiving amplifier 5 and the TIA turning current amplifier 6 are positioned at the receiving end of the silicon photon intermediate layer 2 and are used for receiving and converting optical signals. The fiber array 7 is located on top of the optical module for connecting the optics to an external fiber system. The switch integrated circuit module 8 is located on one side or bottom of the optical module for controlling and managing the routing and switching of optical signals.
The structure of the hybrid assembled optical module of the TSV structure silicon photonics interposer 2 and the layout relationship among the components can be clearly understood through the drawings, and further understanding of the technical features and advantages of the present utility model can be realized.
The TSV penetrates through the through silicon via 4 and is internally provided with a seed layer 10, a diffusion barrier layer 11 is arranged on the outer side of the seed layer 10, an adhesion layer 12 is arranged on the outer side of the diffusion barrier layer 11, and an insulating layer 13 is arranged on the outer side of the adhesion layer 12.
The seed layer 10 is filled with metal, and the diffusion barrier layer 11 is used to provide a good metal filling surface and electrical connection, the adhesion layer 12 is used to enhance adhesion between the seed layer 10 and the insulating layer 13, and the insulating layer 13 may be silicon dioxide (SiO 2 ) Polymer or other insulating material. The main function of the insulating layer 13 is to provide electrical isolation and to protect the metal filling.
The metal bump a14 is arranged above the TSV passing through the through silicon via 4, the rewiring layer 15 is arranged below the TSV passing through silicon via 4 of the silicon photon intermediate layer 2, the passivation layer 16 and the metal bump b17 are arranged on the outer side of the rewiring layer 15, and the metal bump b17 is embedded in the passivation layer 16.
Wherein the metal bump a14 is used for electrical connection with other devices or components, the rewiring layer 15 is used for rerouting and routing signals, and the passivation layer 16 is used for protecting the rewiring layer 15 and the metal bump b17 from the external environment, and simultaneously providing insulation performance. Metal bumps b17 are embedded within passivation layer 16 for electrical connection and signal transmission.
The seed layer 10 is a uniform layer of conductive material.
The PCB layer 1 includes a substrate layer 18 made of an insulating material, on which a wire layer 19 and an insulating material layer 20 for preventing short-circuiting of wires between the wire layers 19 are disposed on the substrate layer 18.
The shape of the TSV through-silicon via 4 may be a circular or square via shape. The round through holes have better uniformity and symmetry for transmission and coupling of optical signals, while the square through holes are easier to control the size and arrangement density.
In the preparation process of the optical module, the PCB layer 1 and the packaging substrate are prepared first, and the quality and stability of the optical module are ensured by adopting a standard preparation process. Next, a silicon photonics interposer 2 is prepared, including fabrication of optical waveguide structures and circuit elements. The desired structures and elements are formed by photolithography, etching, and deposition steps.
TSVs are then fabricated through the through-silicon vias 4 in the photonic silicon interposer 2, and laser drilling or wet etching methods may be used. By optimizing the shape and size of the via holes, efficient optical signal transmission and interconnection are ensured.
Next, the DRV differential receiving amplifier 5 and TIA turning current amplifier 6 are mounted in the region above the TSV through-silicon via 4. These amplifiers are connected by soldering or gluing, ensuring a reliable electrical connection.
The fiber array 7 is then mounted in alignment with the optical waveguide structure in the silicon photonic interposer 2 for efficient optical coupling and transmission. The optical fiber array 7 can ensure stable optical connection by accurate positioning and fixing.
Finally, a switching integrated circuit module 8 is installed to enable routing and switching control of the optical signals. And electric connection and transmission of control signals are realized by welding or pasting and the like.
The steps are as follows: an optical fiber array 7 is installed. The fiber array 7 is mounted on top of the optical module in alignment with the optical waveguide structure in the silicon photonic interposer 2. By means of accurate positioning and fixing, efficient coupling between the optical fiber and the optical waveguide is achieved.
The hybrid assembled optical module of the TSV structure silicon photon interposer 2 of the utility model achieves efficient optical communication and optoelectronic interconnection. The optical signal is transmitted between the internal and external components of the silicon photon intermediate layer 2 through the TSV and the through silicon via 4, is received and converted through the DRV differential receiving amplifier 5 and the TIA turning current amplifier 6, and finally is connected with an external optical fiber system through the optical fiber array 7. The switch integrated circuit module 8 provides flexible optical signal control and management functions. By combining the PCB layer 1, the photon-silicon interposer 2, the package substrate, the TSV through-silicon via 4, the DRV differential receiving amplifier 5, the TIA turning current amplifier 6, the fiber array 7, and the switch integrated circuit module 8, efficient optical communication and optoelectronic interconnection are achieved. The optical module has the characteristics of high integration level, low power consumption and cost effectiveness, and is suitable for various optical communication and interconnection application fields.
The foregoing is merely exemplary of the present utility model, and specific technical solutions and/or features that are well known in the art have not been described in detail herein. It should be noted that, for those skilled in the art, several variations and modifications can be made without departing from the technical solution of the present utility model, and these should also be regarded as the protection scope of the present utility model, which does not affect the effect of the implementation of the present utility model and the practical applicability of the patent. The protection scope of the present utility model is subject to the content of the claims, and the description of the specific embodiments and the like in the specification can be used for explaining the content of the claims.
Claims (7)
1. A hybrid assembly optical module of a TSV structured silicon photonics interposer, comprising:
a PCB layer (1) positioned at the bottom layer of the optical module for providing mechanical support and electrical connection functions;
a first packaging substrate (3) is welded on the PCB layer (1), and an exchange integrated circuit module (8) is welded above the first packaging substrate (3);
the switching integrated circuit module (8) comprises:
a second package substrate (9) located above the first package substrate (3) for supporting and packaging optical and electronic components;
the silicon photon medium layer (2) is positioned above the second packaging substrate (9) and is made of silicon-based materials, and optical and electronic functions are integrated;
the TSVs pass through the through silicon vias (4), vertical through hole structures prepared in the silicon photonic intermediaries (2) for optical signal transmission and interconnection;
a DRV differential receiving amplifier (5) located in an area above the TSV through silicon via (4) through silicon photonics interposer (2) for amplifying weak currents of the optical signal;
a TIA turning current amplifier (6) which penetrates through the through silicon via (4) and penetrates through the area above the silicon photon intermediate layer (2) and is used for converting the conversion current of the optical receiver into a voltage signal;
an optical fiber array (7) on top of the silicon photonic interposer (2) for connecting the optical device to an external optical fiber system.
2. The hybrid assembly optical module of a TSV structure silicon photonics interposer of claim 1 wherein: the TSV passes through the through silicon via (4) and is internally provided with a seed layer (10), the outer side of the seed layer (10) is provided with a diffusion barrier layer (11), the outer side of the diffusion barrier layer (11) is provided with an adhesion layer (12), and the outer side of the adhesion layer (12) is provided with an insulating layer (13).
3. The hybrid assembly optical module of a TSV structure silicon photonics interposer of claim 1 wherein: the silicon photon intermediate layer (2) is arranged above the TSV passing through the silicon through hole (4) and is provided with a metal bump a (14), the silicon photon intermediate layer (2) is arranged below the TSV passing through the silicon through hole (4) and is provided with a rewiring layer (15), the outer side of the rewiring layer (15) is provided with a passivation layer (16) and a metal bump b (17), and the metal bump b (17) is embedded in the passivation layer (16).
4. The hybrid assembly optical module of a TSV structure silicon photonics interposer of claim 2 wherein: the seed layer (10) is a uniform layer of conductive material.
5. The hybrid assembly optical module of a TSV structure silicon photonics interposer of claim 1 wherein: the PCB layer (1) comprises a substrate layer (18) made of an insulating material, wherein a wire layer (19) and an insulating material layer (20) which is positioned between the wire layers (19) and used for preventing wires from being short-circuited are arranged on the substrate layer (18).
6. The hybrid assembly optical module of a TSV structure silicon photonics interposer of claim 1 wherein: the shape of the TSV through silicon via (4) can be a round or square via shape.
7. The hybrid assembly optical module of a TSV structure silicon photonics interposer of claim 1 wherein: the optical fiber array realizes the input and output of optical signals by coupling the optical signals.
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