CN219739555U - Wide-temperature optical fiber amplifier of multiple wavelength pumping - Google Patents
Wide-temperature optical fiber amplifier of multiple wavelength pumping Download PDFInfo
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- CN219739555U CN219739555U CN202320608395.8U CN202320608395U CN219739555U CN 219739555 U CN219739555 U CN 219739555U CN 202320608395 U CN202320608395 U CN 202320608395U CN 219739555 U CN219739555 U CN 219739555U
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- 238000005086 pumping Methods 0.000 title claims abstract description 42
- 239000013307 optical fiber Substances 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 122
- 239000000835 fiber Substances 0.000 claims abstract description 33
- KWMNWMQPPKKDII-UHFFFAOYSA-N erbium ytterbium Chemical group [Er].[Yb] KWMNWMQPPKKDII-UHFFFAOYSA-N 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 6
- 230000003321 amplification Effects 0.000 description 3
- 230000002457 bidirectional effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The utility model relates to a wide-temperature optical fiber amplifier of a plurality of wavelength pumps, which comprises a first isolator, at least two semiconductor pump light sources, a beam combiner, a gain optical fiber and a second isolator; the first isolator inputs signal light unidirectionally and isolates backward amplified signal light of the optical fiber amplifier; the semiconductor pump light sources emit pump light with a certain wavelength between 900 and 1000nm, and the wavelengths of the pump light emitted by the semiconductor pump light sources are different; the beam combiner couples the input signal light and pump light into the gain fiber; the gain fiber absorbs the pump light and amplifies the input signal light; the second isolator outputs forward amplified signal light in one direction. The utility model pumps the optical fiber amplifier by using the semiconductor pumping light sources with a plurality of wavelengths of long, medium and short, and the working temperature range of the optical fiber amplifier is widened and the reliability of the laser radar light source is enhanced by enabling the semiconductor pumping light sources with different wavelengths to work or be turned off in the high-temperature, normal-temperature and low-temperature sections.
Description
Technical Field
The utility model relates to the field of laser radars, in particular to a wide-temperature optical fiber amplifier of a plurality of wavelength pumps.
Background
In lidar applications, the operating temperature range is typically required to be-40 degrees to 105 degrees, so that the operating temperature range of the light source is required to be 145 degrees or more. The fiber laser oscillation amplifier with the wavelength of 1.5um is one of the popular applications of the light source of the laser radar at present, and a semiconductor laser with the wavelength of 1.5um is generally used as a seed source, and then the semiconductor pumped fiber amplifier is used for amplifying to obtain the required laser radar light source. The output wavelength of the semiconductor pump light source used is typically single, such as 915nm, 940nm, 960nm or 976nm. In the temperature variation range of 145 degrees of the laser radar, since the coefficient of the output wavelength of the semiconductor pump light source along with the temperature variation is about 0.3 nm/degree, the wavelength of the semiconductor pump light source is expected to have a huge variation of 43.5nm, and the absorption efficiency of the gain fiber used by the fiber amplifier is changed along with the variation of the pump wavelength (as shown in fig. 7), and the absorption is not absorbed at all even at the extreme temperature, thereby causing the rapid decrease of the output power of the fiber amplifier at the extreme temperature, and causing the problem of the rapid decrease of the detection distance of the laser radar. The current common mode is to control the temperature of the semiconductor pump source to achieve the purpose of smaller wavelength variation range, which can bring the problems of reduced reliability, complex circuit system, increased power consumption and the like of the laser radar light source.
Disclosure of Invention
In view of the above, the present utility model aims to provide a wide temperature optical fiber amplifier with multiple wavelength pumping, which widens the effective working temperature range of the optical fiber amplifier by using semiconductor pumping light sources with different wavelengths, enhances the reliability of the laser radar light source, and reduces the power consumption and the circuit complexity.
The utility model is realized by adopting the following scheme: a multi-wavelength pumped wide-temperature optical fiber amplifier comprises a first isolator, at least two semiconductor pump light sources, a beam combiner, a gain optical fiber and a second isolator;
the first isolator inputs signal light unidirectionally and isolates backward amplified signal light of the optical fiber amplifier;
the semiconductor pump light sources emit pump light with a certain wavelength between 900 and 1000nm, and the wavelengths of the pump light emitted by the semiconductor pump light sources are different;
the beam combiner couples the input signal light and pump light into the gain fiber;
the gain fiber absorbs the pump light and amplifies the input signal light;
the second isolator outputs forward amplified signal light in one direction.
Further, the number of the semiconductor pump light sources is two, namely a first semiconductor pump light source and a second semiconductor pump light source; the first semiconductor pump light source emits pump light of a short wavelength, and the second semiconductor pump light source emits pump light of a long wavelength.
Further, the center wavelength of the first semiconductor pumping light source is 915nm at normal temperature, and the center wavelength of the second semiconductor pumping light source is 976nm at normal temperature.
Further, in the high temperature section, the first semiconductor pump light source is started to work, and the second semiconductor pump light source is turned off; in the low-temperature section, the second semiconductor pumping light source is started to work, and the first semiconductor pumping light source is turned off; in the normal temperature section, the first semiconductor pumping light source and the second semiconductor pumping light source are simultaneously started.
Further, the first semiconductor pump light source and the second semiconductor pump light source are both forward pump or both backward pump, or one of them is forward pump, and the other is backward pump.
Further, the gain fiber is erbium-ytterbium co-doped or erbium-doped fiber.
Further, the working mode of the optical fiber amplifier is a continuous mode or a pulse mode.
Further, the optical fiber amplifier may be a multi-stage amplification.
Further, the three semiconductor pump light sources are respectively a first semiconductor pump light source, a second semiconductor pump light source and a third semiconductor pump light source; the first semiconductor pump light source emits pump light of a short wavelength, the second semiconductor pump light source emits pump light of a long wavelength, and the third semiconductor pump light source emits pump light of a medium wavelength.
Further, the first semiconductor pumping light source has a center wavelength of 915nm at normal temperature, the second semiconductor pumping light source has a center wavelength of 976nm at normal temperature, and the third semiconductor pumping light source has a center wavelength of 940nm or 960nm at normal temperature.
Further, in the high temperature section, the first semiconductor pump light source is turned on, the second semiconductor pump light source and the third semiconductor pump light source are turned off, in the low temperature section, the second semiconductor pump light source is turned on, the first semiconductor pump light source and the third semiconductor pump light source are turned off, in the normal temperature section, the third semiconductor pump light source is turned on, and the first semiconductor pump light source and the second semiconductor pump light source are turned off.
Further, the first, third and second semiconductor pump light sources are both forward pumping or both backward pumping, or one of them is forward pumping, and the other two are backward pumping, or two of them are forward pumping, and the other one is backward pumping.
Compared with the prior art, the utility model has the following beneficial effects: the wide-temperature optical fiber amplifier with multiple wavelength pumping is pumped by using the semiconductor pumping light sources with different wavelengths, and the effective working temperature range of the optical fiber amplifier is widened, the reliability of a laser radar light source is enhanced, the power consumption of the laser radar light source is reduced, and the circuit complexity is reduced by enabling the semiconductor pumping light sources with different wavelengths to work or be turned off in the high-temperature, normal-temperature and low-temperature sections.
The present utility model will be further described in detail below with reference to specific embodiments and associated drawings for the purpose of making the objects, technical solutions and advantages of the present utility model more apparent.
Drawings
FIG. 1 is a schematic diagram of a co-pumping structure according to a first embodiment of the present utility model;
FIG. 2 is a schematic diagram of a co-reverse pumping structure according to a second embodiment of the present utility model;
FIG. 3 is a schematic diagram of a bi-directional pump according to a third embodiment of the present utility model;
FIG. 4 is a schematic diagram of a co-pumping structure according to a fourth embodiment of the present utility model;
FIG. 5 is a schematic diagram of a co-reverse pumping structure according to a fifth embodiment of the present utility model;
FIG. 6 is a schematic diagram of a bi-directional pump according to a sixth embodiment of the present utility model;
fig. 7 is an absorption spectrum of an erbium ytterbium co-doped fiber.
Detailed Description
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the utility model. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this utility model belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the present utility model. As used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.
Embodiment one: as shown in fig. 1, two semiconductor pump light sources pumped in the same forward direction are adopted, and specifically include a first isolator 101, a first semiconductor pump light source 102, a second semiconductor pump light source 103, a beam combiner 104, a gain fiber 105, and a second isolator 106. The first isolator 101, the beam combiner 104, the gain fiber 105 and the second isolator 106 are sequentially arranged, wherein in a high temperature section (more than 60 degrees), the first semiconductor pump light source 102 is started to work, and the second semiconductor pump light source 103 is closed; in the low temperature section (below 10 degrees), the second semiconductor pump light source 103 is turned on and the first semiconductor pump light source 102 is turned off; and in the normal temperature section (between 10 and 60 degrees), the first semiconductor pumping light source and the second semiconductor pumping light source are simultaneously started. The pump light with 915nm central wavelength emitted by the first semiconductor pump light source 102 at normal temperature enters the beam combiner 104, the pump light with 976nm central wavelength emitted by the second semiconductor pump light source 103 at normal temperature enters the beam combiner 104, the signal light with 1.5um wavelength at the input end enters the beam combiner 104 after passing through the first isolator 101, the beam combiner 104 couples the pump light and the signal light into the gain optical fiber 105, the pump light is absorbed by the gain optical fiber 105, the power amplification of the signal light is realized in the gain optical fiber 105, and the amplified signal light is output at the output end after passing through the second isolator 106.
Embodiment two: as shown in fig. 2, two semiconductor pump light sources with the same reverse pumping are adopted, and the difference between the two semiconductor pump light sources is that the first semiconductor pump light source 102, the second semiconductor pump light source 103 and the beam combiner 104 are disposed behind the gain fiber 105, so as to implement the reverse pumping function, and the other two semiconductor pump light sources are the same as the first embodiment, and are not repeated here.
Embodiment III: as shown in fig. 3, two semiconductor pump light sources with two bidirectional pumps are adopted, and the difference between the two semiconductor pump light sources and the first beam combiner is that the first semiconductor pump light source 102 and the first beam combiner 104 are arranged in front of the gain optical fiber 105, and the second semiconductor pump light source 103 and the second beam combiner 107 are arranged behind the gain optical fiber 105, so that the function of two-way pumping is realized; in the implementation process, the second semiconductor pump light source 103 and the beam combiner 104 may be disposed in front of the gain fiber 105, and the first semiconductor pump light source 102 and the beam combiner 107 may be disposed behind the gain fiber 105, so as to implement the function of bidirectional pumping. The other components are the same as those of the first embodiment, and will not be described again here.
Embodiment four: as shown in fig. 4, three semiconductor pump light sources with the same forward pumping are adopted, and specifically include a first isolator 201, a first semiconductor pump light source 202, a second semiconductor pump light source 203, a third semiconductor pump light source 207, a combiner 204, a gain fiber 205, and a second isolator 206. The first isolator 101, the beam combiner 204, the gain fiber 205 and the second isolator 206 are sequentially arranged, wherein in a high temperature section (more than 60 degrees), the first semiconductor pump light source 201 is started to work, and the second semiconductor pump light source 203 and the third semiconductor pump light source 207 are closed; in the low temperature section (below 10 degrees), the second semiconductor pump light source 203 is turned on, and the first semiconductor pump light source 201 and the third semiconductor pump light source 207 are turned off; in the normal temperature range (10-60 degrees), the third semiconductor pump light source 207 is turned on, and the first semiconductor pump light source 201 and the second semiconductor pump light source 203 are turned off. The pump light with 915nm central wavelength emitted by the first semiconductor pump light source 202 at normal temperature enters the beam combiner 204, the pump light with 976nm central wavelength emitted by the second semiconductor pump light source 203 at normal temperature enters the beam combiner 204, the pump light with 940nm or 960nm central wavelength emitted by the third semiconductor pump light source 207 at normal temperature enters the beam combiner 204, the signal light with 1.5um wavelength at the input end enters the beam combiner 204 after passing through the first isolator 201, the beam combiner 204 couples the pump light and the signal light into the gain optical fiber 205, the pump light is absorbed by the gain optical fiber 205, the power amplification of the signal light is realized in the gain optical fiber 205, and the amplified signal light is output at the output end after passing through the second isolator 206.
Fifth embodiment: as shown in fig. 5, three semiconductor pump light sources with the same reverse pumping are adopted, and the difference between the two semiconductor pump light sources is that the first semiconductor pump light source 202, the second semiconductor pump light source 203, the third semiconductor pump light source 207, and the combiner 204 are behind the gain fiber 205, so as to implement the reverse pumping function, and the other is the same as the fourth embodiment, and is not repeated here.
Example six: as shown in fig. 6, the difference between the semiconductor pump light sources of three bi-directional pumps and the fourth embodiment is that the first semiconductor pump light source 202, the second semiconductor pump light source 203, the beam combiner 204 are in front of the gain fiber 205, and the third semiconductor pump light source 207 and the beam combiner 208 are behind the gain fiber 205, so as to implement a bi-directional pump structure. In addition, one of the first semiconductor pump light source 202, the second semiconductor pump light source 203, and the third semiconductor pump light source 207 may be a forward pump, the other two are reverse pumps, or the other two are forward pumps and the other one is a reverse pump, so as to realize various combined bidirectional pump structures, which are the same as those of the fourth embodiment, and will not be repeated here.
Any of the above-described embodiments of the present utility model disclosed herein, unless otherwise stated, if they disclose a numerical range, then the disclosed numerical range is the preferred numerical range, as will be appreciated by those of skill in the art: the preferred numerical ranges are merely those of the many possible numerical values where technical effects are more pronounced or representative. Since the numerical values are more and cannot be exhausted, only a part of the numerical values are disclosed to illustrate the technical scheme of the utility model, and the numerical values listed above should not limit the protection scope of the utility model.
If the utility model discloses or relates to components or structures fixedly connected with each other, then unless otherwise stated, the fixed connection is understood as: detachably fixed connection (e.g. using bolts or screws) can also be understood as: the non-detachable fixed connection (e.g. riveting, welding), of course, the mutual fixed connection may also be replaced by an integral structure (e.g. integrally formed using a casting process) (except for obviously being unable to use an integral forming process).
In addition, terms used in any of the above-described aspects of the present disclosure to express positional relationship or shape have meanings including a state or shape similar to, similar to or approaching thereto unless otherwise stated.
Any part provided by the utility model can be assembled by a plurality of independent components, or can be manufactured by an integral forming process.
The above description is only a preferred embodiment of the present utility model, and is not intended to limit the utility model in any way, and any person skilled in the art may make modifications or alterations to the disclosed technical content to the equivalent embodiments. However, any simple modification, equivalent variation and variation of the above embodiments according to the technical substance of the present utility model still fall within the protection scope of the technical solution of the present utility model.
Claims (6)
1. A multi-wavelength pumped wide temperature fiber amplifier, characterized by: the device comprises a first isolator, at least two semiconductor pump light sources, a beam combiner, a gain fiber and a second isolator;
the first isolator inputs signal light unidirectionally and isolates backward amplified signal light of the optical fiber amplifier;
the semiconductor pump light sources emit pump light with a certain wavelength between 900 and 1000nm, and the wavelengths of the pump light emitted by the semiconductor pump light sources are different;
the beam combiner couples the input signal light and pump light into the gain fiber;
the gain fiber absorbs the pump light and amplifies the input signal light;
the second isolator outputs forward amplified signal light in one direction.
2. The multiple wavelength pumped wide temperature fiber amplifier of claim 1, wherein: the semiconductor pump light sources are two, namely a first semiconductor pump light source and a second semiconductor pump light source; the first semiconductor pump light source emits pump light of a short wavelength, and the second semiconductor pump light source emits pump light of a long wavelength.
3. The multiple wavelength pumped wide temperature fiber amplifier of claim 2, wherein: the center wavelength of the first semiconductor pumping light source at normal temperature is 915nm, and the center wavelength of the second semiconductor pumping light source at normal temperature is 976nm.
4. The multiple wavelength pumped wide temperature fiber amplifier of claim 1, wherein: the gain fiber is erbium-ytterbium co-doped or erbium-doped fiber.
5. The multiple wavelength pumped wide temperature fiber amplifier of claim 1, wherein: the three semiconductor pump light sources are respectively a first semiconductor pump light source, a second semiconductor pump light source and a third semiconductor pump light source; the first semiconductor pump light source emits pump light of a short wavelength, the second semiconductor pump light source emits pump light of a long wavelength, and the third semiconductor pump light source emits pump light of a medium wavelength.
6. The multiple wavelength pumped wide temperature fiber amplifier of claim 5, wherein: the first semiconductor pumping light source has a center wavelength of 915nm at normal temperature, the second semiconductor pumping light source has a center wavelength of 976nm at normal temperature, and the third semiconductor pumping light source has a center wavelength of 940nm or 960nm at normal temperature.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202320608395.8U CN219739555U (en) | 2023-03-25 | 2023-03-25 | Wide-temperature optical fiber amplifier of multiple wavelength pumping |
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| CN202320608395.8U CN219739555U (en) | 2023-03-25 | 2023-03-25 | Wide-temperature optical fiber amplifier of multiple wavelength pumping |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117579157A (en) * | 2024-01-17 | 2024-02-20 | 北京融为科技有限公司 | Satellite-ground laser downlink signal processing system and method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117579157A (en) * | 2024-01-17 | 2024-02-20 | 北京融为科技有限公司 | Satellite-ground laser downlink signal processing system and method |
| CN117579157B (en) * | 2024-01-17 | 2024-04-09 | 北京融为科技有限公司 | Satellite-ground laser downlink signal processing system and method |
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