CN219626669U - 一种硅异质结电池 - Google Patents
一种硅异质结电池 Download PDFInfo
- Publication number
- CN219626669U CN219626669U CN202223247539.6U CN202223247539U CN219626669U CN 219626669 U CN219626669 U CN 219626669U CN 202223247539 U CN202223247539 U CN 202223247539U CN 219626669 U CN219626669 U CN 219626669U
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- CN
- China
- Prior art keywords
- layer
- zinc oxide
- doped
- oxide film
- boron
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 162
- 239000010703 silicon Substances 0.000 title claims abstract description 162
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 161
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 312
- 239000011787 zinc oxide Substances 0.000 claims abstract description 154
- 239000010408 film Substances 0.000 claims description 294
- 239000004065 semiconductor Substances 0.000 claims description 118
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 80
- 239000010409 thin film Substances 0.000 claims description 71
- 239000013078 crystal Substances 0.000 claims description 19
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 6
- 239000000969 carrier Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 69
- 238000004519 manufacturing process Methods 0.000 abstract description 21
- 238000002161 passivation Methods 0.000 abstract description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910003437 indium oxide Inorganic materials 0.000 abstract description 3
- 238000012546 transfer Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 68
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 43
- 229910052796 boron Inorganic materials 0.000 description 43
- 238000000151 deposition Methods 0.000 description 40
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 30
- 238000005229 chemical vapour deposition Methods 0.000 description 23
- 238000006243 chemical reaction Methods 0.000 description 14
- 238000004140 cleaning Methods 0.000 description 14
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000000059 patterning Methods 0.000 description 12
- 238000002360 preparation method Methods 0.000 description 12
- 238000012360 testing method Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- 230000008021 deposition Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 241000282414 Homo sapiens Species 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 1
- -1 diborane Chemical compound 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- Photovoltaic Devices (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202223247539.6U CN219626669U (zh) | 2022-12-05 | 2022-12-05 | 一种硅异质结电池 |
Applications Claiming Priority (1)
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CN202223247539.6U CN219626669U (zh) | 2022-12-05 | 2022-12-05 | 一种硅异质结电池 |
Publications (1)
Publication Number | Publication Date |
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CN219626669U true CN219626669U (zh) | 2023-09-01 |
Family
ID=87795027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202223247539.6U Active CN219626669U (zh) | 2022-12-05 | 2022-12-05 | 一种硅异质结电池 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN219626669U (zh) |
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2022
- 2022-12-05 CN CN202223247539.6U patent/CN219626669U/zh active Active
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Room 901-20, Building 1, 1818-2 Wenyi West Road, Yuhang Street, Yuhang District, Hangzhou City, Zhejiang Province, 311100 Patentee after: Zhejiang Aikang New Energy Technology Co.,Ltd. Patentee after: JIANGSU AKCOME ENERGY RESEARCH INSTITUTE Co.,Ltd. Patentee after: Zhejiang Aikang Future Technology Co.,Ltd. Address before: 214400 No. 1015, Qinfeng Road, Hongmiao Park, Huashi Industrial Concentration Zone, Jiangyin City, Wuxi City, Jiangsu Province Patentee before: JIANGYIN AKCOME SCIENCE AND TECHNOLOGY Co.,Ltd. Patentee before: JIANGSU AKCOME ENERGY RESEARCH INSTITUTE Co.,Ltd. Patentee before: Zhejiang Aikang Future Technology Co.,Ltd. |
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PP01 | Preservation of patent right |
Effective date of registration: 20240624 Granted publication date: 20230901 |