CN219586250U - Double-layer crucible with high evaporation area - Google Patents
Double-layer crucible with high evaporation area Download PDFInfo
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- CN219586250U CN219586250U CN202320935238.8U CN202320935238U CN219586250U CN 219586250 U CN219586250 U CN 219586250U CN 202320935238 U CN202320935238 U CN 202320935238U CN 219586250 U CN219586250 U CN 219586250U
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- crucible
- inner ring
- double
- evaporation area
- silicon carbide
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- 238000001704 evaporation Methods 0.000 title claims abstract description 57
- 230000008020 evaporation Effects 0.000 title claims abstract description 53
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000013078 crystal Substances 0.000 claims abstract description 27
- 239000011148 porous material Substances 0.000 claims abstract description 14
- 239000002245 particle Substances 0.000 claims abstract description 12
- 230000007704 transition Effects 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 239000000843 powder Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 241000190070 Sarracenia purpurea Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Physical Vapour Deposition (AREA)
Abstract
The utility model provides a double-layer crucible with a high evaporation area, and relates to the technical field of crystal growth equipment. The double-layer high evaporation area crucible comprises a crucible shell, a crucible inner ring and a crucible cover; the outer diameter of the inner ring of the crucible is smaller than the inner diameter of the crucible shell, the inner ring of the crucible is placed in the crucible shell, a filling cavity is formed between the inner ring of the crucible and the crucible shell and is used for containing silicon carbide powder, the inner ring of the crucible is provided with pores, the pore diameter of the pores is smaller than the particle diameter of the silicon carbide powder, the pores are used for allowing particles formed by the evaporation of the silicon carbide powder to pass through, a crucible cover is arranged at the top of the crucible shell, and a growth area of seed crystals is arranged below the crucible cover. The double-layer high evaporation area crucible can enable the evaporation area of the silicon carbide powder to be larger, namely the evaporation amount of the silicon carbide powder at each moment is larger, and further the crystal growth efficiency is improved.
Description
Technical Field
The utility model relates to the technical field of crystal growth equipment, in particular to a double-layer crucible with high evaporation area.
Background
In the existing crucible for growing silicon carbide, silicon carbide powder is generally filled at the bottom of the crucible, the filling form of the silicon carbide powder is similar to that of water in a water cup, and in the process of evaporating the silicon carbide powder for growing the silicon carbide, only powder on the top surface of the silicon carbide powder is used for evaporating to form seed crystals at each moment, so that the evaporation area of the silicon carbide powder is smaller, the evaporation amount of the silicon carbide powder at each moment is smaller, and the crystal growing efficiency is further limited.
Disclosure of Invention
The utility model aims to provide a double-layer crucible with high evaporation area, which can lead the evaporation area of silicon carbide powder to be larger, namely the evaporation amount of the silicon carbide powder at each moment to be larger, thereby improving the crystal growth efficiency.
Embodiments of the present utility model are implemented as follows:
the utility model provides a double-layer high evaporation area crucible, which comprises a crucible shell, a crucible inner ring and a crucible cover, wherein the crucible shell is provided with a plurality of grooves;
the outer diameter of the inner ring of the crucible is smaller than the inner diameter of the crucible shell, the inner ring of the crucible is placed in the crucible shell, a filling cavity is formed between the inner ring of the crucible and the crucible shell and is used for containing silicon carbide powder, the inner ring of the crucible is provided with pores, the pore diameter of the pores is smaller than the particle diameter of the silicon carbide powder, the pores are used for allowing particles formed by the evaporation of the silicon carbide powder to pass through, a crucible cover is arranged at the top of the crucible shell, and a growth area of seed crystals is arranged below the crucible cover.
The double-layer crucible with high evaporation area provided by the utility model has the beneficial effects that:
the silicon carbide powder is heated and evaporated to form crystal, and particles formed by the evaporation of the silicon carbide powder reach a growth area of a seed crystal through the inner ring of the crucible, so that the evaporation area of the silicon carbide powder = the contact surface area of the silicon carbide powder and the inner ring of the crucible + the top area of the silicon carbide powder.
In an alternative embodiment, the double-layered high evaporation area crucible further comprises a relay ring mounted inside the crucible housing and supported on top of the inner ring of the crucible, the relay ring being for supporting the seed crystal.
Therefore, the relay ring can stabilize the position of the inner ring of the crucible in the crucible shell, so that the whole structure is more compact.
In an alternative embodiment, the relay ring comprises an annular bottom, an annular top and an annular branch, the annular bottom is supported on the crucible inner ring and is matched with the inner wall of the crucible shell, the annular top is connected to the upper end of the annular bottom, the annular top is in threaded fit with the crucible cover, the annular branch is connected to the inner wall of the annular top, and the annular branch is used for supporting seed crystals.
Thus, the relay ring utilizes a simple structural form to realize three functions, namely, the first function of stabilizing the position of the inner ring of the crucible, the second function of matching with the crucible cover and the third function of supporting seed crystals.
In an alternative embodiment, the annular top has a first internal thread on an inner wall thereof and the crucible cover has a first external thread thereon, the first internal thread mating with the first external thread.
Therefore, the air tightness between the relay ring and the crucible cover is good, and the structure is compact.
In an alternative embodiment, the annular bottom has an outer diameter smaller than the outer diameter of the annular top, the outer wall of the annular top having a second external thread thereon, the inner wall of the crucible housing having a second internal thread thereon, the second internal thread mating with the second external thread.
Therefore, the air tightness between the relay ring and the crucible shell is good, and the structure is compact.
In an alternative embodiment, a support post is provided on the bottom wall of the interior of the crucible housing, and the inner crucible ring is supported on the support post.
Thus, the volume of the filling cavity formed between the inner crucible ring and the crucible shell is larger, and the relative position relationship between the inner crucible ring and the crucible shell is stable.
In an alternative embodiment, the inner crucible ring is barrel-like in structure with the opening facing the crucible cover.
Therefore, the inner ring of the crucible has a simple structure, and is beneficial to forming the evaporation surface of silicon carbide powder with a large area.
In an alternative embodiment, the side wall and the bottom wall of the inner ring of the crucible are in arc transition.
In an alternative embodiment, the side wall and bottom wall of the crucible shell are in an arcuate transition.
In this way, it is advantageous for the silicon carbide powder to fully fill the lower space of the loading chamber.
In an alternative embodiment, the inner crucible ring is made of graphite.
Thus, the inner ring of the crucible can be integrally formed by graphite and directly form pores through which particles formed by the evaporation of silicon carbide powder pass.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present utility model and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram showing a double-layer high evaporation area crucible according to a first embodiment of the present utility model;
FIG. 2 is an exploded view of a double-layered high evaporation area crucible provided in accordance with a first embodiment of the present utility model;
fig. 3 is a schematic full section view of a double-layered high evaporation area crucible provided in a second embodiment of the present utility model.
Icon: 100-double-layer crucible with high evaporation area; 1-a crucible shell; 2-supporting columns; 3-an inner ring of the crucible; 4-filling the cavity; a 5-relay ring; 6-an annular bottom; 7-a ring-shaped top; 8-annular leg; 9-a crucible cover; 10-silicon carbide powder; 11-seed crystal.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present utility model more apparent, the technical solutions of the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments of the present utility model. The components of the embodiments of the present utility model generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the utility model, as presented in the figures, is not intended to limit the scope of the utility model, as claimed, but is merely representative of selected embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present utility model, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or are directions or positional relationships conventionally put in use of the inventive product, are merely for convenience of describing the present utility model and simplifying the description, and are not indicative or implying that the apparatus or element to be referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present utility model. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal," "vertical," and the like do not denote a requirement that the component be absolutely horizontal or overhang, but rather may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present utility model, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.
First embodiment
Referring to fig. 1 and 2, the present embodiment provides a double-layered high evaporation area crucible 100, and the double-layered high evaporation area crucible 100 includes a crucible housing 1, a crucible inner ring 3, a relay ring 5, and a crucible cover 9.
The external diameter of crucible inner ring 3 is less than the internal diameter of crucible shell 1, and crucible inner ring 3 is placed in the inside of crucible shell 1, forms between crucible inner ring 3 and the crucible shell 1 and fills chamber 4, fills chamber 4 and is used for holding carborundum powder 10, has the hole on the crucible inner ring 3, and the aperture of hole is less than carborundum powder 10's particle diameter, and the hole is used for the particle that carborundum powder 10 evaporates formation to pass through.
A support column 2 is arranged on the bottom wall inside the crucible shell 1, and a crucible inner ring 3 is supported on the support column 2. Thus, the filling chamber 4 formed between the inner crucible ring 3 and the crucible housing 1 has a large volume, and the relative positional relationship between the inner crucible ring 3 and the crucible housing 1 is stable.
In this embodiment, the support column 2 is provided only in one and is provided at the center position of the bottom wall inside the crucible housing 1. In other embodiments, the support columns 2 may be a plurality of and evenly distributed on the bottom wall inside the crucible enclosure 1. The structural form of the support column 2 is not limited to a cylindrical shape, and may be a truncated cone shape, an elliptic cylindrical shape, or the like, as long as the crucible inner ring 3 can be stably supported.
The inner ring 3 of the crucible is made of graphite. Thus, the inner crucible ring 3 can be integrally formed of graphite and directly form pores through which particles formed by evaporation of the silicon carbide powder 10 pass.
The inner crucible ring 3 has a barrel-shaped structure, and the opening faces the crucible cover 9. In this way, the inner ring 3 of the crucible has a simple structure, which is advantageous for forming the evaporation surface of silicon carbide powder 10 with a large area.
In other embodiments, the outer shape of the inner crucible ring 3 may be an inverted frustum structure, as long as the inner crucible ring 3 is installed inside the crucible housing 1, and the loading chamber 4 for loading the silicon carbide powder 10 can be formed.
The crucible cover 9 is covered on the top of the crucible shell 1, and a growth area of seed crystal 11 is arranged below the crucible cover 9. In the process of heating and evaporating the silicon carbide powder 10 to grow crystals, particles formed by evaporating the silicon carbide powder 10 reach a growth area of the seed crystal 11 through the crucible inner ring 3, so that the evaporation area of the silicon carbide powder 10 = the contact area of the silicon carbide powder 10 and the crucible inner ring 3 + the top area of the silicon carbide powder 10, and compared with the existing crucible, the evaporation area of the silicon carbide powder 10 is increased by the area of the vertical surface of the silicon carbide powder 10, which is in contact with the crucible inner ring 3, and therefore, the double-layer high-evaporation-area crucible 100 provided by the utility model can enable the evaporation area of the silicon carbide powder 10 to be larger, namely the evaporation amount of the silicon carbide powder 10 is larger at each moment, and further the crystal growth efficiency is improved.
A relay ring 5 is installed inside the crucible housing 1 and supported on top of the crucible inner ring 3, the relay ring 5 being used to support the seed crystal 11. In this way, the relay ring 5 can stabilize the position of the crucible inner ring 3 in the crucible shell 1, so that the whole structure is more compact.
The relay ring 5 comprises an annular bottom 6, an annular top 7 and an annular branch 8, wherein the annular bottom 6 is supported on the crucible inner ring 3 and is matched with the inner wall of the crucible shell 1, the annular top 7 is connected to the upper end of the annular bottom 6, the annular top 7 is in threaded fit with the crucible cover 9, the annular branch 8 is connected to the inner wall of the annular top 7, and the annular branch 8 is used for supporting seed crystals 11. Thus, the relay ring 5 has three functions, namely, the first function of stabilizing the position of the crucible inner ring 3, the second function of matching with the crucible cover 9, and the third function of supporting the seed crystal 11, by using a simple structural form.
The inner wall of the annular top 7 is provided with a first internal thread, the crucible cover 9 is provided with a first external thread, and the first internal thread is matched with the first external thread. Thus, the air tightness between the relay ring 5 and the crucible cover 9 is better, and the structure is compact.
The annular bottom 6 has an outer diameter smaller than the outer diameter of the annular top 7 so that the annular bottom 6 and the annular top 7 can be inserted into the crucible housing 1 in sequence. The outer wall of the annular top 7 is provided with second external threads, and the inner wall of the crucible shell 1 is provided with second internal threads which are matched with the second external threads. Thus, the air tightness between the relay ring 5 and the crucible housing 1 is good, and the structure is compact.
Second embodiment
Referring to fig. 3, this embodiment provides a double-layer crucible 100 with a high evaporation area, which is similar to the first embodiment in structure, except that the side wall and the bottom wall of the inner ring 3 of the crucible are in arc transition. Arc transition is formed between the side wall and the bottom wall of the crucible shell 1. In this way, it is advantageous for the silicon carbide powder 10 to fully fill the lower space of the loading chamber 4.
The first and second embodiments provide a double-layered high evaporation area crucible 100 assembly process:
firstly, a crucible inner ring 3 is arranged in a crucible shell 1, and a filling cavity 4 is formed between the crucible inner ring 3 and the crucible shell 1;
next, the silicon carbide powder 10 is charged into the charging chamber 4;
then, the relay ring 5 is fitted into the crucible housing 1 and contacts the top of the crucible inner ring 3;
then, placing the seed crystal 11 to be grown on the annular branch part 8 of the relay ring 5;
finally, the crucible cover 9 is screwed onto the annular top 7 of the relay ring 5.
The double-layered high evaporation area crucible 100 provided by the first and second embodiments has the advantages of:
1. compared with the existing crucible, the evaporation area of the silicon carbide powder 10 is increased by the area of a vertical surface where the silicon carbide powder 10 contacts the inner crucible ring 3, and the evaporation area of the silicon carbide powder 10 is increased by the area of the vertical surface where the silicon carbide powder 10 contacts the inner crucible ring 3, so that the double-layer high evaporation area crucible 100 provided by the utility model can ensure that the evaporation area of the silicon carbide powder 10 is larger, namely the evaporation amount of the silicon carbide powder 10 is larger at each moment, and further the crystal growth efficiency is improved;
2. the relay ring 5 has three functions by using a simple structural form, namely, first, stabilizing the position of the crucible inner ring 3, second, matching with the crucible cover 9, and third, achieving the function of supporting the seed crystal 11.
The above is only a preferred embodiment of the present utility model, and is not intended to limit the present utility model, but various modifications and variations can be made to the present utility model by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model should be included in the protection scope of the present utility model.
Claims (10)
1. The double-layer high evaporation area crucible is characterized by comprising a crucible shell (1), a crucible inner ring (3) and a crucible cover (9);
the outer diameter of the crucible inner ring (3) is smaller than the inner diameter of the crucible shell (1), the crucible inner ring (3) is placed inside the crucible shell (1), a filling cavity (4) is formed between the crucible inner ring (3) and the crucible shell (1), the filling cavity (4) is used for containing silicon carbide powder (10), pores are formed in the crucible inner ring (3), the pore diameter of the pores is smaller than the particle diameter of the silicon carbide powder (10), the pores are used for allowing particles formed by evaporation of the silicon carbide powder (10) to pass through, a crucible cover (9) is covered on the top of the crucible shell (1), and the lower part of the crucible cover (9) is a growth area of a seed crystal (11).
2. The double-layer high evaporation area crucible according to claim 1, further comprising a relay ring (5), the relay ring (5) being mounted inside the crucible housing (1) and supported on top of the crucible inner ring (3), the relay ring (5) being for supporting a seed crystal (11).
3. The double-layer high evaporation area crucible according to claim 2, wherein the relay ring (5) comprises an annular bottom (6), an annular top (7) and an annular branch (8), the annular bottom (6) is supported on the crucible inner ring (3) and cooperates with the inner wall of the crucible shell (1), the annular top (7) is connected to the upper end of the annular bottom (6), the annular top (7) cooperates with the crucible cover (9) in a threaded manner, the annular branch (8) is connected to the inner wall of the annular top (7), and the annular branch (8) is used for supporting a seed crystal (11).
4. A double-layer high evaporation area crucible according to claim 3, characterized in that the inner wall of the annular top (7) has a first internal thread, the crucible cover (9) has a first external thread, and the first internal thread cooperates with the first external thread.
5. The double-layer high evaporation area crucible according to claim 4, wherein the outer diameter of the annular bottom (6) is smaller than the outer diameter of the annular top (7), the outer wall of the annular top (7) is provided with a second external thread, and the inner wall of the crucible housing (1) is provided with a second internal thread, and the second internal thread is matched with the second external thread.
6. Double-layer high evaporation area crucible according to claim 1, characterized in that a support column (2) is provided on the bottom wall of the interior of the crucible housing (1), the inner crucible ring (3) being supported on the support column (2).
7. Double-layer high evaporation area crucible according to claim 1, characterized in that the crucible inner ring (3) is of barrel-like structure with the opening facing the crucible cover (9).
8. Double-layer high evaporation area crucible according to claim 1, characterized in that the arc transition is between the side wall and the bottom wall of the inner ring (3) of the crucible.
9. Double-layer high evaporation area crucible according to claim 1, characterized in that the side wall and bottom wall of the crucible housing (1) are arc-shaped transitions.
10. Double-layer high evaporation area crucible according to claim 1, characterized in that the crucible inner ring (3) is made of graphite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320935238.8U CN219586250U (en) | 2023-04-23 | 2023-04-23 | Double-layer crucible with high evaporation area |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320935238.8U CN219586250U (en) | 2023-04-23 | 2023-04-23 | Double-layer crucible with high evaporation area |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219586250U true CN219586250U (en) | 2023-08-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320935238.8U Active CN219586250U (en) | 2023-04-23 | 2023-04-23 | Double-layer crucible with high evaporation area |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219586250U (en) |
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2023
- 2023-04-23 CN CN202320935238.8U patent/CN219586250U/en active Active
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