CN210349768U - Plasma etching reaction chamber with adjustable radio frequency coil - Google Patents
Plasma etching reaction chamber with adjustable radio frequency coil Download PDFInfo
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- CN210349768U CN210349768U CN201921754073.4U CN201921754073U CN210349768U CN 210349768 U CN210349768 U CN 210349768U CN 201921754073 U CN201921754073 U CN 201921754073U CN 210349768 U CN210349768 U CN 210349768U
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Abstract
The utility model relates to a plasma etching reaction chamber with an adjustable radio frequency coil, which comprises a casing, a metal base, an aluminum substrate and a ceramic plate, wherein a containing chamber is formed inside the casing, and the metal base is arranged below the containing chamber and is connected with an external power supply through a lead; the aluminum substrate is arranged on the metal base and used for bearing the wafer; a through hole is formed above the shell, and the through hole is covered by the ceramic plate; the ceramic plate is characterized by further comprising a radio frequency coil arranged above the ceramic plate and an adjusting device of the radio frequency coil, wherein the adjusting device is made of insulating materials and comprises a base, a screw rod and a fixed seat, the upper end of the screw rod is a spiral part, the lower end of the screw rod is a polished rod, the polished rod is connected with the base, and the fixed seat is in threaded connection with the spiral part; the center of the radio frequency coil is fixed on the fixed seat, and the outer ring of the radio frequency coil is fixed on the base. The RF coil is adjusted up and down by the adjusting device to change the magnetic field generated by the RF coil, thereby achieving the purpose of adjusting the plasma density distribution in the chamber of the reaction chamber. In addition, the adjusting action is adjusted through the screw rod, and the precision is higher.
Description
Technical Field
The utility model relates to a plasma etching technical field especially relates to a plasma etching reaction chamber of radio frequency coil with adjustable.
Background
In etching processes, etch uniformity is an important indicator, and plasma etch uniformity depends on the uniform distribution of plasma density within the chamber volume. In the prior art, a fixed radio frequency coil is basically used, and the plasma density distribution is adjusted by adjusting the height of a metal base to adjust the distance between electrodes, so as to achieve the purpose of adjusting the plasma density distribution. This method is difficult to operate and the effect is not ideal.
Disclosure of Invention
An object of the utility model is to provide a radio frequency coil's electric thick liquid etching reaction chamber with adjustable area can improve electric thick liquid etching degree of consistency and adjust difficult problem, promotes the regulation effect.
In order to realize the technical purpose, the utility model discloses a plasma etching reaction chamber with an adjustable radio frequency coil, which comprises a casing, a metal base, an aluminum substrate and a ceramic plate, wherein a containing chamber is formed inside the casing, and an insulating plate is arranged on the inner wall of the casing; the metal base is arranged below the accommodating chamber and is connected with an external power supply through a lead; the aluminum substrate is arranged on the metal base and used for bearing the wafer; a through hole is formed above the shell, and the through hole is covered by the ceramic plate; the utility model also comprises a radio frequency coil arranged above the ceramic plate and an adjusting device thereof, wherein the radio frequency coil is connected with an external radio frequency power supply, the adjusting device is made of insulating materials and comprises a base, a screw rod and a fixed seat, the upper end of the screw rod is a spiral part, the lower end of the screw rod is a polished rod, the polished rod is connected with the base, and the fixed seat is in threaded connection with the spiral part; the center of the radio frequency coil is fixed on the fixed seat, and the outer ring of the radio frequency coil is fixed on the base.
Preferably, the radio frequency coil is a helical coil.
Preferably, the screw rod fixing device further comprises a rocking handle, wherein the rocking handle is arranged at the top end of the screw rod and is fixedly connected with the screw rod.
Preferably, the fixing device further comprises a limiting pipe used for limiting the maximum moving range of the fixing seat, and the limiting pipe is sleeved on the screw rod and is arranged above the fixing seat.
Preferably, the base is hollowed out.
Preferably, a support column is arranged at the edge of the base and used for fixing the radio frequency coil.
Preferably, the supporting column is screwed and fixed on the base.
Preferably, the number of the supporting columns is at least 3.
The utility model discloses following beneficial effect has:
the utility model discloses an adjusting device comes the upper and lower regulation radio frequency coil, makes radio frequency coil can be adjusted to the vault or the double-vault that the radian is different by the platykurtic to changed radio frequency coil's induction magnetic field, reached the purpose of adjusting the indoor plasma density distribution of reaction chamber. The adjustment is realized by rotating the screw rod, the fine adjustment is easier, the operation is simple, in addition, the adjustment action is completed by the rotation of the screw rod, the adjustment precision is higher, and the operation is simple and convenient.
Drawings
Fig. 1 is a schematic diagram of the radio frequency coil of the present invention in a dome shape.
Fig. 2 is a schematic diagram of the rf coil of the present invention in a double dome shape.
Fig. 3 is a structural view of the adjusting device.
Description of the main part symbols:
1: case, 11: chamber, 12: insulating board, 2: metal base, 3: radio frequency coil, 4: ceramic plate, 5: aluminum substrate, 6: wafer, 71: base, 72: screw, 73: fixing seat, 74: rocking handle, 75: limiting pipe, 76: and (4) a support column.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments.
As shown in fig. 1-3, the present invention discloses a plasma etching chamber with adjustable rf coil, which comprises a housing 1, a metal base 2, an rf coil 3, a ceramic plate 4, an aluminum substrate 5 and an adjusting device. A chamber 11 is formed inside the casing 1, and an insulating plate 12 is arranged on the inner wall of the chamber 11; a through hole is arranged above the machine shell 1, is covered by a straight ceramic plate 5 and is sealed by a sealing ring; and a circle of caulking groove is formed at the periphery of the through hole, and the sealing ring is placed and fixed in the caulking groove. The metal base 2 is telescopically arranged below the accommodating chamber 11 and is connected with an external power supply; the aluminum substrate 5 is arranged above the metal base 2 and used for bearing a wafer 7; the radio frequency coil 3 and the adjusting device are arranged above the ceramic plate 4, and the radio frequency coil 3 is connected with an external radio frequency power supply.
The adjusting device comprises a base 71, a screw 72, a fixed seat 73, a rocking handle 74, a limiting pipe 75 and a supporting column 76. The top end of the screw 72 is fixedly connected with a rocking handle 74, the upper end of the screw 72 is a spiral part, and the lower end is a polished rod; the base 71 is provided with a through hole into which a rod portion of the screw 72 is inserted to connect the screw 72 and the base 71, and the screw 72 can be clamped by a clip so that the screw 72 cannot move up and down but can rotate. The fixed seat 73 is sleeved on the screw 72 and is in threaded connection with the spiral part; the limiting tube 75 is also sleeved on the screw 72 and is arranged above the fixed seat 84. The center of the radio frequency coil 3 is fixed on the fixing seat 73, the outer ring of the radio frequency coil 3 is fixed on the supporting columns 76 screwed on the base 71, the number of the supporting columns 76 is not less than 3, and thus the edge of the radio frequency coil 3 is not easy to deform when the height of the radio frequency coil 3 is adjusted.
Because the screw 72 is immovable up and down, the fixing seat 73 is in threaded connection with the screw 72, the radio frequency coil 3 connected with the fixing seat 73 is also fixed on the supporting column 76, and the supporting column 76 is fixed on the base 71 immovably, so that the fixing seat 73 does not rotate along with the rotation of the screw 72, but moves up and down along with the rotation of the screw 72, and the center of the radio frequency coil 3 is driven to move up and down; when the fixing base 73 moves downward from the uppermost end to the lowermost end, the shape of the rf coil 3 gradually changes from dome shape to flat shape, and then gradually changes to double dome shape. Furthermore, the rotational adjustment by the screw 72 is easier and the accuracy is relatively higher. In addition, the supporting column 76 is connected with the base 71 in a screwing manner, so that the overall height of the radio frequency coil 3 can be adjusted in a small range, and the overall adjustment range is larger.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention should be covered by the present invention.
Claims (8)
1. The plasma etching reaction chamber with the adjustable radio frequency coil comprises a machine shell, a metal base, an aluminum substrate and a ceramic plate, wherein a containing chamber is formed inside the machine shell, and an insulating plate is arranged on the inner wall of the machine shell; the metal base is arranged below the accommodating chamber and is connected with an external power supply through a lead; the aluminum substrate is arranged on the metal base and used for bearing the wafer; a through hole is formed above the shell, and the through hole is covered by the ceramic plate; the ceramic plate is characterized by further comprising a radio frequency coil and a regulating device thereof, wherein the radio frequency coil is arranged above the ceramic plate and is connected with an external radio frequency power supply; the adjusting device is made of insulating materials and comprises a base, a screw rod and a fixed seat, wherein the upper end of the screw rod is a spiral part, the lower end of the screw rod is a polished rod, the polished rod is connected with the base, and the fixed seat is in threaded connection with the spiral part; the center of the radio frequency coil is fixed on the fixed seat, and the outer ring of the radio frequency coil is fixed on the base.
2. The plasma etch chamber of claim 1, wherein the RF coil is a helical coil.
3. A plasma etching chamber as recited in claim 1, further comprising a crank disposed at a top end of said screw and fixedly connected to said screw.
4. The plasma etching chamber of claim 1, further comprising a limiting tube for limiting a maximum range of motion of the holder, wherein the limiting tube is disposed over the screw and above the holder.
5. The plasma etching chamber of claim 1, wherein the base is hollow.
6. A plasma etching chamber as recited in claim 1, wherein the base has support posts at edges thereof for holding the rf coil.
7. A plasma etching chamber as recited in claim 6, wherein the support posts are pivotally mounted to the base.
8. A plasma etching chamber as claimed in claim 6 or 7, wherein the number of the support posts is at least 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921754073.4U CN210349768U (en) | 2019-10-18 | 2019-10-18 | Plasma etching reaction chamber with adjustable radio frequency coil |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921754073.4U CN210349768U (en) | 2019-10-18 | 2019-10-18 | Plasma etching reaction chamber with adjustable radio frequency coil |
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| Publication Number | Publication Date |
|---|---|
| CN210349768U true CN210349768U (en) | 2020-04-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921754073.4U Active CN210349768U (en) | 2019-10-18 | 2019-10-18 | Plasma etching reaction chamber with adjustable radio frequency coil |
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| CN (1) | CN210349768U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022143144A1 (en) * | 2021-01-04 | 2022-07-07 | 江苏鲁汶仪器有限公司 | Ion source having coil structure capable of changing along with discharge cavity structure |
| CN115233166A (en) * | 2021-06-25 | 2022-10-25 | 台湾积体电路制造股份有限公司 | Method of using semiconductor processing chamber and semiconductor substrate processing apparatus |
| CN117238744A (en) * | 2023-11-13 | 2023-12-15 | 无锡尚积半导体科技有限公司 | Two-stage diffusion radio frequency device and wafer etching equipment |
-
2019
- 2019-10-18 CN CN201921754073.4U patent/CN210349768U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022143144A1 (en) * | 2021-01-04 | 2022-07-07 | 江苏鲁汶仪器有限公司 | Ion source having coil structure capable of changing along with discharge cavity structure |
| CN115233166A (en) * | 2021-06-25 | 2022-10-25 | 台湾积体电路制造股份有限公司 | Method of using semiconductor processing chamber and semiconductor substrate processing apparatus |
| CN115233166B (en) * | 2021-06-25 | 2023-09-05 | 台湾积体电路制造股份有限公司 | Method of using semiconductor processing chamber and semiconductor substrate processing apparatus |
| CN117238744A (en) * | 2023-11-13 | 2023-12-15 | 无锡尚积半导体科技有限公司 | Two-stage diffusion radio frequency device and wafer etching equipment |
| CN117238744B (en) * | 2023-11-13 | 2024-03-01 | 无锡尚积半导体科技有限公司 | Wafer etching equipment |
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