CN219499221U - DCDC boost circuit shared by double APDs - Google Patents
DCDC boost circuit shared by double APDs Download PDFInfo
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- CN219499221U CN219499221U CN202320767354.3U CN202320767354U CN219499221U CN 219499221 U CN219499221 U CN 219499221U CN 202320767354 U CN202320767354 U CN 202320767354U CN 219499221 U CN219499221 U CN 219499221U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The utility model relates to the technical field of booster circuits, in particular to a DCDC booster circuit shared by double APDs, which comprises: the device comprises a DCDC boosting module, a first voltage dividing module, a first avalanche diode and a second avalanche diode, wherein the first voltage dividing module, the first avalanche diode and the second avalanche diode are connected with the output end of the DCDC boosting module; the first control unit is connected with the DCDC boosting module and used for adjusting the voltage output by the DCDC boosting module to supply to the first avalanche diode; and the second control unit is connected with the first voltage division module and is used for adjusting the reference voltage so as to realize the voltage output of the second avalanche diode through the first voltage division module. The two paths of receiving TO share one DCDC booster circuit, so that the circuit design is simplified, and the material cost is saved.
Description
Technical Field
The utility model relates to the technical field of booster circuits, in particular to a DCDC booster circuit shared by double APDs.
Background
The access network receives TO and uses APD (avalanche diode) TO realize photoelectric conversion, and the principle is that reverse high voltage is applied TO APD TO realize photoelectric conversion with fast responsivity. The current combolt is two receiving TO, and corresponds TO using two DCDC boost circuits, and referring TO fig. 1, the disadvantage of using two DCDC boost modules is that the number of used devices is large, the material cost is high, and the layout on the PCB is difficult, so that it is difficult TO arrange the two DCDC boost modules on a PCB board, which is not beneficial TO the circuit simplification and module miniaturization of the combolt module.
Disclosure of Invention
Therefore, the technical problem TO be solved by the utility model is TO overcome the defects in the prior art, design a DCDC boost circuit shared by double APDs, and enable two paths of receiving TO TO share one DCDC boost module, thereby realizing simplified design of the circuit.
In order to solve the technical problems, the utility model provides a DCDC booster circuit shared by double APDs, comprising: the device comprises a DCDC boosting module, a first voltage dividing module, a first avalanche diode and a second avalanche diode, wherein the first voltage dividing module, the first avalanche diode and the second avalanche diode are connected with the output end of the DCDC boosting module;
the first control unit is connected with the DCDC boosting module and used for adjusting the voltage output by the DCDC boosting module to supply to the first avalanche diode;
and the second control unit is connected with the first voltage division module and is used for adjusting the reference voltage so as to realize the voltage output of the second avalanche diode through the first voltage division module.
As a preferred mode of the present utility model, the voltage of the second avalanche diode is lower than the voltage of the first avalanche diode.
As a preferred mode of the present utility model, the output voltage of the first voltage dividing module is adjustable.
As a preferred mode of the present utility model, the first voltage dividing module includes a MOS field effect transistor.
As a preferred mode of the present utility model, the first voltage dividing module includes a comparator.
As a preferred mode of the present utility model, the first voltage dividing module includes a first resistor and a second resistor connected to each other.
As a preferred mode of the present utility model, the resistance values of the first resistor and the second resistor are adjustable.
As a preferred mode of the present utility model, the dc-dc boosting device further includes a second voltage dividing module provided between the dc-dc boosting module and the first avalanche diode.
As a preferred mode of the present utility model, the second voltage dividing module is identical to the first voltage dividing module.
As a preferred mode of the present utility model, the output voltage of the second voltage dividing module is adjustable.
Compared with the prior art, the technical scheme of the utility model has the following advantages:
according to the DCDC booster circuit shared by the double APDs, the voltage output by the DCDC booster module is adjusted through the first control unit to be supplied to the first avalanche diode, and the first voltage dividing module is used for supplying power to the second avalanche diode. The second control unit adjusts the reference voltage, and the voltage output of the second avalanche diode APD2 is realized through the voltage division of the first resistor R1 and the second resistor R2.
Drawings
In order that the utility model may be more readily understood, a more particular description of the utility model will be rendered by reference to specific embodiments thereof that are illustrated in the appended drawings, in which
Fig. 1 is a schematic diagram of a prior art dc boost module using two dc boost modules.
FIG. 2 is a schematic diagram of a first voltage divider module of a dual APD common DCDC boost circuit of the present utility model.
Description of the embodiments
The present utility model will be further described with reference to the accompanying drawings and specific examples, which are not intended to be limiting, so that those skilled in the art will better understand the utility model and practice it.
Referring to fig. 1-2, an embodiment of a dual APD common DCDC boost circuit of the present utility model is shown.
The dual APD common DCDC boost circuit includes: a DCDC boost module for boosting, a voltage division module for reducing, a first avalanche diode APD1, a second avalanche diode APD2. The DCDC boosting module is a boosting circuit, and the step-down module is a step-down circuit.
The DCDC boost module is configured to convert direct current from one voltage to another. The DCDC boost module may be implemented using a common boost module.
Referring to fig. 2, the voltage dividing module includes a comparator A1, a MOS field effect transistor Q3, a first resistor R1, and a second resistor R2. The resistance values of the first resistor R1 and the second resistor R2 are adjustable.
As one embodiment, referring to fig. 2, the DCDC boost circuit shared by the two APDs uses one voltage division module, that is, the first voltage division module, and the first voltage division module is respectively connected with the second control unit MCU-DAC2 and the second avalanche diode APD2.
The first control unit MCU-DAC1 is connected with the DCDC boosting module, and adjusts the voltage output by the DCDC boosting module to supply to the first avalanche diode APD1.
The second control unit MCU-DAC2 is connected with the first voltage division module and adjusts the reference voltage, so that voltage output of the second avalanche diode APD2 is achieved through the first voltage division module.
The implementation principle of the DCDC booster circuit shared by the double APDs is as follows: the first control unit MCU-DAC1 adjusts the voltage V1 output by the DCDC boosting module to supply to the first avalanche diode APD1, and meanwhile, V1 obtains V2 through the first voltage dividing module to supply power to the second avalanche diode APD2. The second control unit MCU-DAC2 is used for adjusting Vref, and voltage output of the second avalanche diode APD2 is achieved through voltage division of the first resistor R1 and the second resistor R2.
Specifically, the DCDC boost module outputs a high voltage V1 through the control adjustment of the first control unit MCU-DAC1, so as to supply power to the first avalanche diode APD1, and simultaneously supply power to the second avalanche diode APD2 through the first voltage division module, V2 obtains Vfb through the voltage division of the first resistor R1 and the second resistor R2, where Vfb is compared with Vref, and the output of the comparator A1 controls the MOS field effect transistor Q3, so that the output of the stable voltage of V2 is realized, and the output formula of V2 is as follows:
v2=vref (r1+r2)/R2, 0< V2< V1, R1 is greater than R2
Therefore, the voltage of Vref is controlled by the second control unit MCU-DCA2, and the control output of the V2 voltage can be realized by selecting proper resistance values of R1 and R2.
As one implementation manner, the dual APD shared DCDC boost circuit includes two voltage division modules, namely the first voltage division module and the second voltage division module, where the first voltage division module and the second voltage division module are the same.
The first voltage division module is connected with the second avalanche diode APD2, and the second voltage division module is connected with the first avalanche diode APD1. The voltage of the second avalanche diode APD2 is adjustable through the first voltage division module, and the voltage of the first avalanche diode APD1 is adjustable through the second voltage division module.
As one embodiment, the voltage of the second avalanche diode APD2 is lower than the voltage of the first avalanche diode APD1, i.e. the voltage of the second avalanche diode APD2 is not higher than the voltage of the first avalanche diode APD1.
As one embodiment, the DCDC boost module may be selected from the following forms, and the DCDC boost module includes: a power supply DC, a MOS field effect transistor Q4, an inductor L1 and a capacitor C1.
The DCDC boosting module is simple in principle as follows: when the MOS field effect transistor Q4 is turned on, the power supply DC charges through the inductor L1, at this time, the voltage of the inductor L1 is equal to the voltage of the voltage source as Vcc, and when the MOS field effect transistor Q4 is turned off, the voltage of the inductor L1 is Vcc because the electric energy stored in the inductor L1 cannot be suddenly changed, so that the voltage of the capacitor C1 is changed to 2Vcc, and the boosted output Vout is realized by controlling the switch of the MOS field effect transistor Q4.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations and modifications of the present utility model will be apparent to those of ordinary skill in the art in light of the foregoing description. It is not necessary here nor is it exhaustive of all embodiments. And obvious variations or modifications thereof are contemplated as falling within the scope of the present utility model.
Claims (10)
1. A dual APD common DCDC boost circuit, comprising: the device comprises a DCDC boosting module, a first voltage dividing module, a first avalanche diode and a second avalanche diode, wherein the first voltage dividing module, the first avalanche diode and the second avalanche diode are connected with the output end of the DCDC boosting module;
the first control unit is connected with the DCDC boosting module and used for adjusting the voltage output by the DCDC boosting module to supply to the first avalanche diode;
and the second control unit is connected with the first voltage division module and is used for adjusting the reference voltage so as to realize the voltage output of the second avalanche diode through the first voltage division module.
2. The dual APD common DCDC boost circuit of claim 1, wherein the voltage of the second avalanche diode is lower than the voltage of the first avalanche diode.
3. The dual APD common DCDC boost circuit of claim 1, wherein the output voltage of the first voltage divider module is adjustable.
4. The dual APD common DCDC boost circuit of claim 1, wherein the first voltage divider module comprises a MOS field effect transistor.
5. The dual APD common DCDC boost circuit of claim 1, wherein the first voltage divider module comprises a comparator.
6. The dual APD common DCDC boost circuit of claim 1, wherein the first voltage divider module comprises a first resistor and a second resistor connected to each other.
7. The dual APD common DCDC boost circuit of claim 6, wherein the first resistor and the second resistor are adjustable in resistance.
8. The dual APD common DCDC boost circuit of claim 1, further comprising a second voltage divider module disposed between the DCDC boost module and the first avalanche diode.
9. The dual APD common DCDC boost circuit of claim 8, wherein the second voltage divider module is identical to the first voltage divider module.
10. The dual APD common DCDC boost circuit of claim 8, wherein the output voltage of the second voltage divider module is adjustable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320767354.3U CN219499221U (en) | 2023-04-10 | 2023-04-10 | DCDC boost circuit shared by double APDs |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320767354.3U CN219499221U (en) | 2023-04-10 | 2023-04-10 | DCDC boost circuit shared by double APDs |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219499221U true CN219499221U (en) | 2023-08-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320767354.3U Active CN219499221U (en) | 2023-04-10 | 2023-04-10 | DCDC boost circuit shared by double APDs |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219499221U (en) |
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2023
- 2023-04-10 CN CN202320767354.3U patent/CN219499221U/en active Active
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