CN219443824U - Manufacturing device for photovoltaic cell electrode - Google Patents

Abstract

The utility model relates to a photovoltaic cell electrode, a manufacturing method and a manufacturing device thereof and application. The manufacturing device of the photovoltaic cell electrode comprises a laser source, a collimated light beam generating unit and a light beam focusing unit; the collimated light beam generating unit is positioned at the light emitting side of the laser source and is used for converting the laser beam emitted by the laser source into a collimated light beam and projecting the collimated light beam to the light beam focusing unit; the beam focusing unit is positioned on the light emitting side of the collimated beam generating unit and is used for focusing the collimated beam onto the battery piece to be photoetched. When the manufacturing device is used for manufacturing the photovoltaic cell electrode, a plurality of groups of spatial light modulators, projection optical systems and illumination optical systems are not needed, so that the development cost of the device is reduced by times; data processing and multi-path light path overlapping alignment are not needed, so that the manufacturing reliability and efficiency are improved; the photoetching of electrode pattern grooves with high depth-to-width ratio, such as 3-20 μm line width, 1-20 μm depth and depth-to-width ratio of 0.3-2, can be realized, so that the photovoltaic cell electrode with high quality is obtained.

Description

Manufacturing device for photovoltaic cell electrode

Technical Field

The utility model relates to the technical field of photovoltaic cells, in particular to a device for manufacturing a photovoltaic cell electrode.

Background

With the implementation of the worldwide carbon-neutral goal, photovoltaic power generation will play an increasingly important role as one of the important sources of new energy. The metallization process is an essential step in the manufacturing flow of the electrode of the photovoltaic cell, and is used for manufacturing the electrode of the photovoltaic cell, so as to realize the current output of photoelectric conversion. The electrode line width of the metallization process has important influence on the photoelectric conversion efficiency and the manufacturing cost of the photovoltaic cell, the cost of the silver paste material is equivalent to that of the silicon wafer material, and the cost is relatively high in the whole cell manufacturing process. The traditional metallization process of the photovoltaic cell electrode adopts the technical scheme that conductive silver paste is printed by silk screen and then high-temperature sintering is carried out. If the traditional silver paste metallization process is used, the capacity construction of photovoltaic cells is increased year by year, the silver demand is greatly increased, and the global silver mine exploitation amount is difficult to meet the huge silver consumption demand. In the metallization process, the reduction of silver consumption or the replacement of silver by other non-noble metals is an important direction for solving the manufacturing of the electrode of the photovoltaic cell.

In order to solve the above problems, electroplating technology is being studied more and more widely as a novel electrode preparation method. The process flow comprises the following steps: preparing a seed layer on a cell substrate, covering an insulating layer on the seed layer, preparing an electrode pattern groove on the insulating layer, exposing the bottom of the groove to the seed layer, depositing electrode materials on the seed layer at the bottom of the groove through electroplating, removing the insulating layer and the seed layer through an etching process, and finally forming the fine photovoltaic cell electrode. Because the electrode growth in the electroplating process is isotropic, the exposed bottom groove needs to have a certain depth-to-width ratio, otherwise, as the electroplated layer is increased, a 'pin' effect is formed above the electrode of the photovoltaic cell, so that the line width of the upper part of the electrode of the photovoltaic cell is increased, and the adhesive force of the bottom is deteriorated. In order to obtain a photovoltaic cell electrode with better quality, electrode pattern grooves with a certain depth are required to be photoetched so as to limit the shape of the photovoltaic cell electrode during electroplating.

In order to produce a fine electrode with a certain aspect ratio with a line width of less than 20 μm, a high-efficiency and precise photoetching method needs to be searched. Conventional lithographic approaches are projection lithography systems and PCB multi-optical head maskless lithography systems, and contact or proximity lithography. For projection lithography systems and PCB multi-optical-head maskless lithography systems, generally, the pixels of a spatial light modulator (DMD) unit are about 10 μm, and in order to obtain a lithography groove with a line width of 10 μm, the micro multiple of a projection optical system in an existing lithography machine is generally 2-5 times, such as the electrode area of 210mmx105mm of lithography, and the existing lithography machine needs to be provided with 8-16 groups of optical heads (including the spatial light modulator, the projection optical system and the illumination optical system). Leading to high equipment price, high running cost and low efficiency of photoetching patterning. For contact or proximity lithography, it is difficult to lithography trenches with line widths less than 20 μm and depths greater than 10 μm due to the mask straight edge diffraction effect with line widths greater than 50 μm.

Disclosure of Invention

Accordingly, there is a need for a low cost and high efficiency device for manufacturing photovoltaic cell electrodes that can achieve high aspect ratios.

The device for manufacturing the photovoltaic cell electrode comprises a laser source, a collimated light beam generating unit and a light beam focusing unit;

The collimated light beam generating unit is positioned at the light emitting side of the laser source and is used for converting the laser beam emitted by the laser source into a collimated light beam and projecting the collimated light beam to the light beam focusing unit;

the beam focusing unit is positioned on the light emitting side of the collimated beam generating unit and is used for focusing the collimated beam onto the battery piece to be photoetched.

When the photovoltaic cell electrode manufacturing device adopting the technical scheme is used for manufacturing the photovoltaic cell electrode, a plurality of groups of spatial light modulators, projection optical systems and illumination optical systems are not needed, so that the development cost of the device is reduced by times; data processing and multi-path light path overlapping alignment are not needed, so that the manufacturing reliability and efficiency are improved; the photoetching of electrode pattern grooves with high depth-to-width ratio, such as 3-20 μm line width, 1-20 μm depth and depth-to-width ratio of 0.3-2, can be realized, so that the photovoltaic cell electrode with high quality is obtained.

In one possible implementation, the beam focusing unit has a microlens array or a microlens array, the lens of which faces toward or away from the battery plate to be lithographically produced.

In one possible implementation manner, the micro-column lens arrays are in one-to-one correspondence with the positions of the battery pieces to be photoetched, and the periods of the micro-column lens arrays and the secondary grids of the battery pieces to be photoetched are the same.

In one possible implementation, the period of the micro-cylindrical lens array is 0.1 mm-3 mm, and the numerical aperture of the micro-cylindrical lens array is 0.005-0.15.

In one possible implementation manner, the micro-cylindrical lens array comprises a plurality of cylindrical lenses which are periodically arranged along the row direction or the column direction, and the interval between two adjacent cylindrical lenses is 0-0.2 mm.

In one possible implementation, the beam focusing unit is a diffractive optical element, the diffractive surface of which faces the collimated beam generating unit.

In one possible implementation manner, the light beam focusing unit includes a first micro-cylindrical lens array device and a second micro-cylindrical lens array device sequentially arranged along the light-emitting light path, the first micro-cylindrical lens array device and the second micro-cylindrical lens array device are placed in confocal mode, a lens surface of the first micro-cylindrical lens array device is opposite to a lens surface of the second micro-cylindrical lens array device, and a focal length of the first micro-cylindrical lens array device is larger than a focal length of the second micro-cylindrical lens array device.

In one possible implementation manner, the light beam focusing unit further includes a first light shielding mask for shielding stray light or a main grid region of the battery piece to be photoetched, the first light shielding mask is located at a confocal focal plane position of the first micro-cylindrical lens array device and a confocal focal plane position of the second micro-cylindrical lens array device, the first light shielding mask is provided with a plurality of openings, and the plurality of openings are in one-to-one correspondence with the positions of a plurality of confocal focal points of the first micro-cylindrical lens array device and the second micro-cylindrical lens array device.

In one possible implementation, the collimated beam is a quasi-straight beam or a collimated plane beam.

In one possible implementation manner, the collimated light beam generating unit includes a light beam transmission component and at least one group of light beam diffusion components sequentially arranged along the light-emitting light path, and the light beam diffusion components include a diffusion lens and a collimating lens sequentially arranged along the light-emitting light path;

the diffusion lens is positioned at the light-emitting side of the light beam transmission assembly and used for diffusing the laser beam formed by the light beam transmission assembly onto the collimating lens; the collimating lens is positioned on the light emergent side of the diffusion lens and is used for projecting parallel light beams formed by the laser beams passing through the diffusion lens to the light beam focusing unit.

In one possible implementation, the beam delivery assembly includes:

the vibrating mirror is positioned at the light emitting side of the laser source and is used for changing the direction of the laser beam emitted by the laser source; and

and the field lens is positioned on the light emergent side of the galvanometer and is used for focusing the laser beam formed by the galvanometer onto the diffusion lens.

In one possible implementation, the beam delivery assembly includes a turning mirror to change the direction of the laser beam emitted by the laser source and project the laser beam onto the diffusion lens.

In one possible implementation, the beam delivery assembly includes at least one mirror to redirect the laser beam emitted by the laser source and project the laser beam onto the diffusion lens.

In one possible implementation, the collimated beam generating unit further includes a beam shaping assembly located between the laser source and the beam transmitting assembly.

In one possible implementation manner, the device for manufacturing the electrode of the photovoltaic cell further comprises a second light shielding mask for shielding stray light, and the second light shielding mask is located between the collimated light beam generating unit and the light beam focusing unit or between the light beam focusing unit and the cell to be photoetched.

Drawings

Fig. 1 is a schematic view of a device for manufacturing a photovoltaic cell electrode according to a first embodiment of the present utility model;

FIG. 2 is a schematic diagram of a micro-cylindrical lens array of a beam focusing unit according to another embodiment of the present utility model;

FIG. 3 is a schematic diagram of a period of a micro-cylindrical lens array corresponding to a sub-grid period of a battery plate to be photoetched in a beam focusing unit according to an embodiment of the present utility model;

FIG. 4 is a graph of optical transfer function versus log per millimeter line;

FIG. 5 is a graph of optical transfer function versus focus offset;

FIG. 6 is a schematic diagram of a beam focusing unit according to a second embodiment of the present utility model;

fig. 7 is a schematic view of a beam focusing unit according to a third embodiment of the present utility model;

FIG. 8 is a schematic view of a collimator according to another embodiment of the present utility model;

fig. 9 is a schematic view of a device for manufacturing a photovoltaic cell electrode according to a second embodiment of the present utility model;

fig. 10 is a schematic view of a device for manufacturing a photovoltaic cell electrode according to a third embodiment of the present utility model;

fig. 11 is a schematic view of a device for manufacturing a photovoltaic cell electrode according to a fourth embodiment of the present utility model;

fig. 12 is a schematic view of a device for manufacturing a photovoltaic cell electrode according to a fifth embodiment of the present utility model;

fig. 13 is a schematic view of a device for manufacturing a photovoltaic cell electrode according to a sixth embodiment of the present utility model;

fig. 14 is a schematic view of a device for manufacturing a photovoltaic cell electrode according to a seventh embodiment of the present utility model;

fig. 15 is a schematic view illustrating a position of a second light-shielding mask in the apparatus for manufacturing a photovoltaic cell electrode according to an embodiment of the present utility model;

Fig. 16 is a schematic view of another position of a second light-shielding mask in the apparatus for manufacturing a photovoltaic cell electrode according to an embodiment of the present utility model;

FIG. 17 is a flowchart of a method of fabricating a photovoltaic cell electrode according to an embodiment of the present utility model;

FIG. 18 is a schematic diagram of a device for fabricating a photovoltaic cell electrode for patterning a photovoltaic cell according to one embodiment;

FIG. 19 is a schematic diagram of a device for fabricating a photovoltaic cell electrode according to another embodiment for patterning a photovoltaic cell to be lithographically fabricated;

FIG. 20 is a schematic diagram of a device for fabricating a photovoltaic cell electrode for patterning a photovoltaic cell according to another embodiment;

FIG. 21 is a schematic diagram of a device for fabricating a photovoltaic cell electrode for patterning a photovoltaic cell according to another embodiment;

FIG. 22 is a schematic illustration of a manner of bridging between a plurality of battery plates to be lithographically fabricated using the fabrication apparatus of FIG. 21;

FIG. 23 is a schematic diagram showing a position between a focusing point of a beam focusing unit and an insulating layer according to an embodiment of the present utility model;

FIG. 24 is a schematic view showing a position between a focusing point of a beam focusing unit and an insulating layer according to another embodiment of the present utility model;

Fig. 25 is a flowchart of a method for manufacturing a photovoltaic cell electrode according to an embodiment of the present utility model;

fig. 26 is a flowchart of a method of fabricating a photovoltaic cell electrode according to another embodiment of the present utility model;

FIG. 27 is a schematic side view of a photovoltaic cell electrode according to an embodiment of the present utility model;

fig. 28 is a schematic plan view illustrating a process for manufacturing a photovoltaic cell electrode according to an embodiment of the present utility model;

fig. 29 is a schematic side view of a process for fabricating a photovoltaic cell electrode according to another embodiment of this utility model;

fig. 30 is a schematic plan view illustrating a process for manufacturing a photovoltaic cell electrode according to another embodiment of the present utility model;

fig. 31 is a schematic plan view illustrating a process for manufacturing a photovoltaic cell electrode according to another embodiment of the present utility model;

FIG. 32 is a schematic diagram of a collimated beam scanning a beam focusing unit according to an embodiment of the present utility model;

FIG. 33 is a schematic view of a collimated beam scanning a beam focusing unit according to another embodiment of the present utility model;

fig. 34 is a schematic view of scanning during the fabrication of a photovoltaic cell electrode according to an embodiment of the present utility model;

fig. 35 is a schematic view of an apparatus for manufacturing a photovoltaic cell electrode according to an embodiment of the present utility model;

Fig. 36 is a schematic view of an apparatus for manufacturing a photovoltaic cell electrode according to another embodiment of the present utility model.

Detailed Description

In order that the above objects, features and advantages of the utility model will be readily understood, a more particular description of the utility model will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present utility model. The present utility model may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the utility model, whereby the utility model is not limited to the specific embodiments disclosed below.

It will be understood that when an element is referred to as being "fixed to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this utility model belongs. The terminology used herein in the description of the utility model is for the purpose of describing particular embodiments only and is not intended to be limiting of the utility model. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.

Referring to fig. 1, a device 100 for manufacturing a photovoltaic cell electrode according to a first embodiment of the present utility model includes a laser source 110, a collimated light beam generating unit 120, and a light beam focusing unit 130.

Wherein the laser source 110 is an ultraviolet or blue laser, the wavelength of the light source is 325-450 nm, and the power is 1-100 watts. Preferably, the light source wavelength is 405nm, 395nm, 365nm, 355nm or 325nm.

The collimated light beam generating unit 120 is located at the light emitting side of the laser source 110, and is configured to convert the laser beam emitted from the laser source 110 into a collimated light beam and project the collimated light beam to the beam focusing unit 130. In this embodiment, the collimated light beam may be a collimated light beam having a small divergence angle (for example, 0.2 ° or less).

The beam focusing unit 130 is located on the light emitting side of the collimated beam generating unit 120, and is used for focusing the collimated beam onto the battery plate 140 to be photoetched. The battery plate 140 to be photoetched comprises a battery plate substrate 141, a seed layer 142 positioned on the battery plate substrate 141 and an insulating layer 143 positioned on the seed layer 142. The seed layer 142 can increase the adhesion between the electrode material and the battery cell substrate 141. The insulating layer 143 is made of a photosensitive material, for example, photoresist, photosensitive ink, or the like.

As shown in fig. 1, in the present embodiment, the collimated light beam emitted from the collimated light beam generating unit 120 irradiates the upper surface of the light beam focusing unit 130 vertically, and is focused by the light beam focusing unit 130 to form a plurality of focusing points, and the plurality of focusing points just fall near the insulating layer 143 of the battery piece 140 to be photoetched, so as to form micro grooves on the insulating layer 143. And (3) forming a plurality of groove lines through scanning exposure of the quasi-linear light beam and integrated exposure of a plurality of focusing points, and obtaining the electrode pattern grooves after development. Thus, multiple groups or all micro-groove photoetching is completed at one time, and the patterned efficient manufacture of the photovoltaic cell precise electrode is realized. The photovoltaic cell electrode manufacturing apparatus 100 according to the present embodiment can realize lithography of electrode pattern grooves having a high aspect ratio, for example, a line width of 3 μm to 20 μm and a depth of 1 μm to 20 μm, thereby obtaining a photovoltaic cell electrode of a high quality.

On the basis of the foregoing embodiment, the beam focusing unit 130 has a micro-cylindrical lens array 131, and the lens surface of the micro-cylindrical lens array 131 faces away from the battery piece 140 to be photoetched. The micro cylindrical lens array 131 can focus the linear light beam to form a plurality of focusing points, the focusing points fall near the insulating layer 143, the integral exposure forms a groove line, and the electrode pattern groove is obtained after development.

Of course, the lens surface of the microlens array 131 of the beam focusing unit 130 may also face the battery plate 140 to be photoetched, as shown in fig. 2. The battery sheet 140 to be photoetched includes a battery sheet substrate 141, a seed layer 142, and an insulating layer 143, which are sequentially stacked. At this time, the microlens array 131 can also focus the linear beam to form a plurality of focusing points, so as to expose the insulating layer 143 to form a trench line.

Wherein the material of the micro-cylindrical lens array 131 is a transparent material such as glass or resin; preferably, an optical material having a high ultraviolet or blue-violet wavelength is used, such as quartz glass or an optical plastic. The lenticular lens array 131 may be transferred to the substrate by UV imprinting, or etched directly to the substrate.

On the basis of the foregoing embodiment, the positions of the micro-cylindrical lens arrays 131 and the sub-grids of the battery piece 140 to be photoetched are in one-to-one correspondence, and the periods of the micro-cylindrical lens arrays 131 and the sub-grids of the battery piece 140 to be photoetched are the same. Thus, the electrode pattern groove of the whole photovoltaic cell can be obtained through one-time photoetching, and the manufacturing efficiency of the electrode of the photovoltaic cell is improved.

Of course, in the manufacturing apparatus of the present utility model, the period of the micro-cylindrical lens array 131 may also correspond to the periods of the plurality of sub-grids of the battery piece 140 to be photoetched, as shown in fig. 3. After the photoetching of the auxiliary grid of the photovoltaic cell slice is completed, the beam focusing unit with the micro-column lens array is horizontally moved for a corresponding distance, and then the photoetching of the auxiliary grid of the photovoltaic cell slice of the other group can be realized.

In addition to the above embodiments, the period of the microlens array 131 is 0.1mm to 3mm, and the numerical aperture of the microlens array 131 is 0.005 to 0.15. Taking 355nm laser wavelength as an example, for example, focusing a micro-cylindrical lens na=0.1, according to the imaging resolution formula: 0.61 x λ/na=2.17 μm, focal depth 0.61 x λ/(na≡2) to 22 μm; if the focusing micro-cylindrical lens na=0.013, the imaging resolution is: 0.61 x λ/na=16.7 μm, focal depth-1.3 mm; by comprehensively considering exposure and development factors and the like, the photoetching of the groove type with the high aspect ratio and the depth-width ratio can be easily obtained by adopting the manufacturing device of the photovoltaic cell electrode.

The relationship between the optical transfer function (Modulus of the OTF) and the pair of line numbers per millimeter (Spatial Frequency in cycles per mm) and the focus offset (Focus shift in Millimeters) is shown in fig. 4 and 5, respectively. We need corresponding line pair data with an optical transfer function greater than 0.5, and the corresponding line pair per millimeter is 1-50 from fig. 4, and the corresponding period per millimeter is calculated as follows: taking 50 pairs as an example, the line width is 1 ++ (50×2) =0.01 mm, i.e. 10 microns. In the same way as in fig. 5, the corresponding focus offset data with an optical transfer function greater than 0.5 is taken.

Taking the patterning of 10 μm electrodes as an example, the numerical aperture na=0.03 of the focusing micro-cylindrical lens array design, the focal depth is 250 μm. Compared with the conventional 30-mu m auxiliary gate electrode, the arrangement density of the photovoltaic cell electrode can be increased to 3 times under the condition of the same shading area. Therefore, under the condition that the shading area is the same, the arrangement density of the electrodes is high, and photo-generated electrons are collected by the electrodes in the shortest path, so that the photoelectric conversion efficiency is improved; the electrodes collect and disperse photo-generated electrons, and the current on each electrode is small; the electrode line width is small, the electrode line height can be reduced under the condition of the same conductivity, the thickness of the insulating layer pattern layer is thin, the exposure time is short, and the production efficiency is high under the condition of the same laser energy; the insulating layer has thin layer thickness, and saves the material consumption of the insulating layer of the battery piece.

On the basis of the foregoing embodiment, the micro cylindrical lens array 131 includes a plurality of cylindrical lenses periodically arranged in a row direction or a column direction, and a space between two adjacent cylindrical lenses is 0 to 0.2mm. When the interval between two adjacent cylindrical lenses is 0, the cylindrical lenses are closely arranged. The present embodiment can improve the light energy utilization ratio of the laser beam.

In the device for manufacturing the photovoltaic cell electrode of the present utility model, the micro-cylindrical lens array in the beam focusing unit may be a micro-lens array. Wherein the lens of the microlens array faces toward or away from the cell to be lithographically formed. Further, the material of the microlens array is a transparent material such as glass or resin; preferably, an optical material having a high ultraviolet or blue-violet wavelength is used, such as quartz glass or an optical plastic.

When the manufacturing device of the photovoltaic cell electrode comprising the micro lens array is used for manufacturing the photovoltaic cell electrode, the micro lens array can align with the linear light beams to focus to form a plurality of focusing points, the collimating light beam generating unit and the light beam focusing unit are designed into a whole, the collimating light beam generating unit and the light beam focusing unit are kept to move relatively to the cell to be photoetched, the movement is controlled to move and scan along with the movement, thereby exposing the insulating layer to form a groove line, and then forming electrode pattern grooves on the insulating layer after development.

In addition, in the device for manufacturing the photovoltaic cell electrode of the present utility model, the beam focusing unit is not limited to the single microlens array or the microlens array in the above embodiment, and may be other devices that can function to focus the light beam.

Referring to fig. 6, the beam focusing unit 130 according to the second embodiment of the present utility model is a diffractive optical element (Diffractive Optical Elements, DOE), and the diffractive surface of the diffractive optical element faces the collimated beam generating unit, as shown in fig. 6. The battery sheet 140 to be photoetched includes a battery sheet substrate 141, a seed layer 142, and an insulating layer 143, which are sequentially stacked. At this time, the beam focusing unit 130 can focus the linear beam to form a plurality of focusing points, so as to expose the insulating layer 143 to form the trench line of the electrode pattern.

Referring to fig. 7, a beam focusing unit 130 according to a third embodiment of the present utility model includes a first microlens array device 131 and a second microlens array device 132 sequentially disposed along an outgoing light path, the first microlens array device 131 and the second microlens array device 132 are disposed in confocal manner, a lens surface of the first microlens array device 131 is opposite to a lens surface of the second microlens array device 132, and a focal length of the first microlens array device 131 is larger than a focal length of the second microlens array device 132.

The beam focusing unit 130 of the third embodiment is applicable to a battery cell 140 to be photoetched in which an insulating layer is of a negative photoresist type, wherein the battery cell 140 to be photoetched includes a battery cell substrate 141, a seed layer 142, and an insulating layer 143, which are laminated in this order. In photolithography, the first microlens array device 131 located above collects the collimated light beam, and then is collimated and irradiated onto the surface of the insulating layer 143 by the second microlens array device 132 located below, so as to form collimated wide light beam exposure with sub-grating period intervals.

On the basis of the foregoing embodiment, the beam focusing unit 130 further includes a first light shielding mask 133 for shielding stray light or a main grid region of the battery piece to be photoetched, where the first light shielding mask 133 is located at confocal focal plane positions of the first micro-cylindrical lens array device 131 and the second micro-cylindrical lens array device 132, and the first light shielding mask 133 is provided with a plurality of openings, and the plurality of openings correspond to the positions of the plurality of confocal focal points of the first micro-cylindrical lens array device 131 and the second micro-cylindrical lens array device 132 one by one. The first light shielding mask 133 can shield astigmatism or a main gate region of a battery piece to be photoetched, avoid focusing light beams to an electrode pattern groove region, and improve photoetching precision.

Referring to fig. 1, in addition to the apparatus 100 for manufacturing a photovoltaic cell electrode according to the first embodiment, the collimated light beam generating unit 120 includes a light beam transmitting assembly 121 and a light beam diffusing assembly 122 sequentially disposed along a light exit path, and the light beam diffusing assembly 122 includes a diffusing lens 123 and a collimating lens 124 sequentially disposed along the light exit path.

The diffusion lens 123 is located at the light emitting side of the beam transmission component 121, and is used for diffusing the laser beam formed by the beam transmission component 121 onto the collimating lens 124. The collimator lens 124 is located at the light emitting side of the diffusion lens 123 to project the laser beam passing through the diffusion lens 123 to the beam focusing unit 130 as a parallel line beam. Wherein the collimator lens 124 and the diffusion lens 123 are disposed confocal.

The diffusion lens 123 is a diffusion negative cylindrical lens, and the focal point of the diffusion negative cylindrical lens is disposed in the confocal of the collimator lens 124. The collimator lens 124 is a collimator cylindrical lens or a collimator lens. The collimating cylindrical lens or the collimating lens can form parallel light beams to be projected onto the beam focusing unit 130, and then the beam focusing unit 130 focuses the parallel light beams to form a plurality of focusing points, thereby exposing the insulating layer 143 to form the trench lines of the electrode pattern.

In other embodiments, the diffusion lens may be a diffusion positive cylindrical lens, and when the diffusion lens is a diffusion positive cylindrical lens, the real focus of the diffusion positive cylindrical lens is confocal with the collimating lens.

In addition, the collimating lens 124 may be a fresnel collimating cylindrical lens, as shown in fig. 8. The battery sheet 140 to be photoetched includes a battery sheet substrate 141, a seed layer 142, and an insulating layer 143, which are sequentially stacked. At this time, the fresnel collimating cylindrical lens can form parallel light beams to be projected onto the beam focusing unit 130, and then the beam focusing unit 130 focuses the parallel light beams to form a plurality of focusing points, thereby exposing the insulating layer 143 to form the groove lines of the electrode pattern.

Further, in the apparatus 100 for manufacturing a photovoltaic cell electrode according to the first embodiment, the beam transmission assembly 121 includes the galvanometer 125 and the field lens 126. The galvanometer 125 is located at the light emitting side of the laser source 110, and is used for changing the direction of the laser beam emitted by the laser source 110. The field lens 126 is located on the light emitting side of the galvanometer 125, and is used for focusing the laser beam formed by the galvanometer 125 onto the diffusion lens 123.

In the present embodiment, the number of beam diffusing elements 122 is one, but in the device for manufacturing a photovoltaic cell electrode according to the present utility model, the number of beam diffusing elements is not limited to one, and may be two or more, and specifically, may be set according to the laser beam emitted from the beam transmitting element.

Referring to fig. 9, a device 100 for manufacturing a photovoltaic cell electrode according to a second embodiment of the present utility model includes a laser source 110, a collimated light beam generating unit 120, and a light beam focusing unit 130. The collimated light beam generating unit 120 includes a light beam transmitting assembly 121 and a light beam diffusing assembly 122 disposed in order along the light path of the light. The beam transmission assembly 121 includes a galvanometer 125 and a field lens 126 sequentially disposed along the light-emitting path, and the beam diffusion assembly 122 includes a diffusion lens 123 and a collimator lens 124 sequentially disposed along the light-emitting path.

As shown in fig. 9, when the apparatus 100 for manufacturing a photovoltaic cell electrode according to the second embodiment is used to manufacture a photovoltaic cell electrode, the to-be-photoetched cell 140 is disposed directly under the beam focusing unit 130, where the to-be-photoetched cell 140 includes a cell substrate 141, a seed layer 142, and an insulating layer 143 that are sequentially stacked. In lithography, the laser beam passes through the beam transmission assembly 121 to achieve multiple beams, two beams irradiated vertically are emitted, two sets of beam diffusion assemblies 122 are respectively and correspondingly arranged, and the two sets of beam diffusion assemblies 122 are closely arranged to generate multiple quasi-linear beams to irradiate the beam focusing unit 130, so that the working efficiency is improved.

In the device for manufacturing the photovoltaic cell electrode according to the present utility model, the beam transmission assembly is not limited to the above two embodiments, and may have other configurations.

Referring to fig. 10, a device 100 for manufacturing a photovoltaic cell electrode according to a third embodiment of the present utility model includes a laser source 110, a collimated light beam generating unit 120, and a light beam focusing unit 130. Wherein the collimated light beam generating unit 120 includes a light beam transmitting assembly 121 and a light beam diffusing assembly 122 sequentially disposed along the light-emitting light path, wherein the light beam diffusing assembly 122 includes a diffusing lens 123 and a collimating lens 124 sequentially disposed along the light-emitting light path. Further, the beam transmission assembly 121 includes a mirror for changing the direction of the laser beam emitted from the laser source 110 and projecting the laser beam onto the diffusion lens 123.

As shown in fig. 10, when the apparatus 100 for manufacturing a photovoltaic cell electrode according to the third embodiment is used to manufacture a photovoltaic cell electrode, the to-be-photoetched cell 140 is disposed directly under the beam focusing unit 130, where the to-be-photoetched cell 140 includes a cell substrate 141, a seed layer 142, and an insulating layer 143, which are sequentially stacked. In photolithography, the laser beam emitted from the laser source 110 sequentially passes through the mirror and the beam diffusing unit 122 to form a collimated beam, and then the beam focusing unit 130 focuses the collimated beam to form a plurality of focusing points, so as to expose the insulating layer 143 to form a trench line of an electrode pattern.

When the beam transmission component of the present utility model is a reflecting mirror, the number of the reflecting mirrors is not limited, and two or more reflecting mirrors may be provided, and one group of laser sources may correspond to a plurality of reflecting mirrors, or a plurality of groups of laser sources may correspond to a plurality of reflecting mirrors.

Referring to fig. 11, a device 100 for manufacturing a photovoltaic cell electrode according to a fourth embodiment of the present utility model includes a laser source 110, a collimated light beam generating unit 120, and a light beam focusing unit 130. Wherein the collimated light beam generating unit 120 includes a light beam transmitting assembly 121 and a light beam diffusing assembly 122 sequentially disposed along the light-emitting light path, wherein the light beam diffusing assembly 122 includes a diffusing lens 123 and a collimating lens 124 sequentially disposed along the light-emitting light path. Further, the beam transmission assembly 121 includes four mirrors arranged along the light path of the outgoing light, each of which is used to change the direction of the laser beam emitted from the laser source 110 and to project the laser beam onto the corresponding diffusion lens 123. Specifically, in this embodiment, the front three mirrors from left to right are lens mirrors or other non-total reflection mirrors, and the rightmost mirror is a total reflection mirror, so that when the laser beam sequentially passes through the front three mirrors, a part of the laser beam is reflected by the mirrors and then projected onto the diffusion lens 123, and the rest of the laser beam can pass through the front mirror and then be projected onto the rear adjacent mirror until the laser beam irradiates onto the rightmost total reflection mirror, and then is totally reflected onto the diffusion lens 123 located below the rightmost total reflection mirror.

As shown in fig. 11, when the photovoltaic cell electrode is fabricated by using the apparatus 100 for fabricating a photovoltaic cell electrode according to the fourth embodiment, the to-be-photoetched cell 140 is disposed directly under the beam focusing unit 130, where the to-be-photoetched cell 140 includes a cell substrate 141, a seed layer 142, and an insulating layer 143, which are sequentially stacked. In photolithography, the laser beam emitted from the laser source 110 sequentially passes through a plurality of mirrors and a plurality of corresponding groups of beam diffusion units 122 to form a plurality of collimated beams, and then the beam focusing unit 130 focuses the plurality of collimated beams to form a plurality of focusing points, so as to expose the insulating layer 143 to form a trench line of an electrode pattern. In this embodiment, one set of laser sources 110 can scan and implement multiple split beams, and multiple sets of beam-diffusing assemblies 122 are used to form multiple collimated beams, so as to improve the working efficiency.

Referring to fig. 12, a device 100 for manufacturing a photovoltaic cell electrode according to a fifth embodiment of the present utility model includes a laser source 110, a collimated light beam generating unit 120, and a light beam focusing unit 130. Wherein the collimated light beam generating unit 120 includes a light beam transmitting assembly 121 and a light beam diffusing assembly 122 sequentially disposed along the light-emitting light path, wherein the light beam diffusing assembly 122 includes a diffusing lens 123 and a collimating lens 124 sequentially disposed along the light-emitting light path. Further, in the present embodiment, the number of the laser sources 110 is four, and the collimated light beam generating units 120 and the light beam focusing units 130 are respectively arranged in four groups. Each beam transmission assembly 121 includes a mirror, and each mirror is used to change the direction of the laser beam emitted from the laser source 110 and to project the laser beam onto the corresponding diffusion lens 123.

As shown in fig. 12, when the photovoltaic cell electrode is fabricated by using the apparatus 100 for fabricating a photovoltaic cell electrode according to the fifth embodiment, the to-be-photoetched cell 140 is disposed directly under the beam focusing unit 130, where the to-be-photoetched cell 140 includes a cell substrate 141, a seed layer 142, and an insulating layer 143, which are sequentially stacked. In photolithography, the laser beams emitted from each laser source 110 sequentially form a plurality of collimated beams via the corresponding reflecting mirrors and the corresponding plurality of beam diffusing units 122, and then the beam focusing unit 130 focuses the plurality of collimated beams to form a plurality of focusing points, so as to expose the insulating layer 143 to form the trench lines of the electrode pattern. In the present embodiment, the plurality of groups of laser sources 100, the plurality of groups of collimated light beam generating units 120 and the light beam focusing unit 130 are used to generate a plurality of collimated light beams at the same time, and the scanning of the collimated light beams is achieved by the overall movement of the manufacturing apparatus, so that the working efficiency can be improved by using a low-power laser source.

Referring to fig. 13, a device 100 for manufacturing a photovoltaic cell electrode according to a sixth embodiment of the present utility model includes a laser source 110, a collimated light beam generating unit 120, and a light beam focusing unit 130. Wherein the collimated light beam generating unit 120 includes a light beam transmitting assembly 121 and a light beam diffusing assembly 122 sequentially disposed along the light-emitting light path, wherein the light beam diffusing assembly 122 includes a diffusing lens 123 and a collimating lens 124 sequentially disposed along the light-emitting light path. Further, the beam transmission assembly 121 includes a turning mirror for changing the direction of the laser beam emitted from the laser source 110 and projecting the laser beam onto the corresponding diffusion lens 123.

As shown in fig. 13, when the photovoltaic cell electrode is fabricated by using the apparatus 100 for fabricating a photovoltaic cell electrode according to the sixth embodiment, the to-be-photoetched cell 140 is disposed directly under the beam focusing unit 130, where the to-be-photoetched cell 140 includes a cell substrate 141, a seed layer 142, and an insulating layer 143, which are sequentially stacked. In photolithography, the laser beam emitted from the laser source 110 sequentially passes through the turning mirror and the beam diffusing unit 122 to form a plurality of collimated beams, and then the beam focusing unit 130 focuses the collimated beams to form a plurality of focusing points, so as to expose the insulating layer 143 to form a trench line of an electrode pattern.

Referring to fig. 14, a device 100 for manufacturing a photovoltaic cell electrode according to a seventh embodiment of the present utility model includes a laser source 110, a beam shaping assembly 150, a collimated beam generating unit 120, and a beam focusing unit 130, which are sequentially disposed along an outgoing light path. Wherein the collimated light beam generating unit 120 includes a light beam transmitting assembly 121 and a light beam diffusing assembly 122 sequentially disposed along the light-emitting light path, wherein the light beam diffusing assembly 122 includes a diffusing lens 123 and a collimating lens 124 sequentially disposed along the light-emitting light path. Further, the beam transmission assembly 121 includes a mirror for changing the direction of the laser beam emitted from the laser source 110 and projecting the laser beam onto the diffusion lens 123.

Wherein the beam shaping component 150 can shape or homogenize the laser gaussian beam to conform the collimated beam edge to the center energy. The beam shaping assembly 150 may be a pi-shaped shaping device, a light homogenizing device implemented by a microlens array set, or a beam-shaping device implemented by laser beam diffusion, a beam-centering device, or a combination of the above devices or methods.

As shown in fig. 14, when the photovoltaic cell electrode is fabricated by using the apparatus 100 for fabricating a photovoltaic cell electrode according to the seventh embodiment, the to-be-photoetched cell 140 is disposed directly under the beam focusing unit 130, where the to-be-photoetched cell 140 includes a cell substrate 141, a seed layer 142, and an insulating layer 143, which are sequentially stacked. In photolithography, the laser beam emitted from the laser source 110 sequentially passes through the beam shaping module 150, the reflecting mirror and the beam diffusing module 122 to form a collimated beam, and then the beam focusing unit 130 focuses the collimated beam to form a plurality of focusing points, so as to expose the insulating layer 143 to form a trench line of the electrode pattern.

On the basis of the foregoing embodiments, the device for manufacturing a photovoltaic cell electrode further includes a second light-shielding mask 160 for shielding stray light, where the second light-shielding mask 160 is located between the collimated light beam generating unit and the light beam focusing unit 130, as shown in fig. 15; or between the beam focusing unit 130 and the battery plate 140 to be lithographically formed, as shown in fig. 16. The collimated light beam generating unit includes a light beam diffusing assembly 122, and the light beam diffusing assembly 122 includes a diffusing lens 123 and a collimator lens 124 sequentially disposed along the light path of the light. Wherein the beam focusing unit 130 has a micro-cylindrical lens array 131. The battery sheet 140 to be photoetched includes a battery sheet substrate 141, a seed layer 142, and an insulating layer 143, which are sequentially stacked.

In this embodiment, the second light-shielding mask 160 can shield the gap between two adjacent micro-cylindrical lenses in the micro-cylindrical lens array 131, so as to avoid stray light; the edge beam of the collimated beam can also be shielded to make the beam energy uniform.

The device for manufacturing the photovoltaic cell slice electrode can simultaneously realize the manufacturing of the fine auxiliary gate electrode and the wide main gate electrode of the photovoltaic cell slice. In the device for manufacturing a photovoltaic cell electrode according to the present utility model, the collimated light beam generating unit according to any of the embodiments and the light beam focusing unit according to any of the embodiments may be used in combination in a row.

When the photovoltaic cell electrode manufacturing device adopting the technical scheme is used for manufacturing the photovoltaic cell electrode, a plurality of groups of spatial light modulators, projection optical systems and illumination optical systems are not needed, so that the development cost of the device is reduced by times; data processing and multi-path light path overlapping alignment are not needed, so that the manufacturing reliability and efficiency are improved; the photoetching of electrode pattern grooves with high depth-to-width ratio, such as 3-20 μm line width, 1-20 μm depth and depth-to-width ratio of 0.3-2, can be realized, so that the photovoltaic cell electrode with high quality is obtained.

Referring to fig. 17, a method for manufacturing a photovoltaic cell electrode according to an embodiment of the utility model includes the following steps:

S10, providing the manufacturing device and the battery piece to be photoetched, wherein the battery piece to be photoetched comprises a battery piece substrate, a seed layer positioned on the battery piece substrate and an insulating layer positioned on the seed layer.

The battery plate substrate may be, for example, a silicon wafer. The seed layer may be formed on the battery cell substrate and the insulating layer may be formed on the seed layer using methods commonly used in the art.

In one possible implementation, the thickness of the insulating layer is 1 μm to 20 μm.

And S20, placing the battery piece to be photoetched on one side of the beam focusing unit far away from the collimated beam generating unit, photoetching the insulating layer by adopting a manufacturing device to form electrode pattern grooves on the insulating layer, and exposing the seed layer to obtain the patterned insulating layer.

Referring to fig. 18 to 21, the patterning of the battery piece 140 to be photoetched is performed by using the manufacturing apparatus of the four embodiments, wherein the battery piece 140 to be photoetched includes a battery piece substrate 141, a seed layer 142 disposed on the battery piece substrate, and an insulating layer 143 disposed on the seed layer 142.

Referring to fig. 18, in one embodiment, a laser beam 200 sequentially forms a collimated beam through a diffusion negative cylindrical lens 123 and a collimating cylindrical lens 124, and then a beam focusing unit 130 with a micro-cylindrical lens array focuses the collimated beam to form a plurality of focusing points, and the laser beam 200 scans along a scanning direction Y, so as to expose an insulating layer 143 to form a trench line 144 of an electrode pattern.

Referring to fig. 19, in another embodiment, a laser beam 200 sequentially forms a collimated beam through a diffusion positive lens 123 and a collimating lens 124, and then a beam focusing unit 130 with a micro-lens array focuses the collimated beam to form a plurality of focusing points, and the laser beam 200 scans along a scanning direction Y, so as to expose an insulating layer 143 to form a trench line 144 of an electrode pattern.

Referring to fig. 20, in another embodiment, a diffusion negative cylindrical lens 123, a collimating cylindrical lens 124, and a beam focusing unit 130 having a micro-cylindrical lens array or micro-lens array form a line beam scanning device set 180, which is designed as a whole and moves with motion control. The lengths of the diffusion negative cylindrical lens 123, the collimating cylindrical lens 124 and the beam focusing unit 130 with the micro-cylindrical lens array or the micro-lens array can be designed to be shorter and lighter, so that the load of a scanning assembly is reduced, and the processing difficulty of a device is reduced.

In this embodiment, the beam focusing unit 130 provides a plurality of focusing points, so that the focusing points fall near the insulating layer 143 of the battery plate 140 to be photoetched, the line beam scanning device group 100 scans and exposes the whole to form a plurality of focusing lines, thereby exposing the insulating layer 143 to form the trench line 144 of the electrode pattern, and then developing and finally obtaining a group of electrode pattern trenches on the insulating layer.

Referring to fig. 21, in another embodiment, the laser beam 200 sequentially forms a collimated beam through the diffusion lens 123 and the collimator lens 124, and the collimated beam may be exposed by edge bonding or splicing to realize the exposure of the splice groove. A shadow mask 160 is provided during exposure to shape the beam to form a square, hexagon or other shape to facilitate the overlap or splice of the exposure of adjacent areas, as shown in fig. 22. The light-shielding mask 160 is located above the beam focusing unit 130 with the micro-cylindrical lens array, so that the collimated beam passes through the light-shielding mask and then passes through the beam focusing unit 130.

Referring to fig. 23, in one possible implementation, the insulating layer 143 of the battery plate 140 to be photoetched is a positive photoresist, the micro-cylindrical lens array or micro-lens array of the beam focusing unit 130 focuses to form a plurality of focusing points, the plurality of focusing points are located at one side of the insulating layer 143 far from the battery plate substrate 141, and the distances between the plurality of focusing points and the surface of the insulating layer 143 far from the battery plate substrate 141 are all 0.01 mm-1 mm. At this time, a trapezoid groove with a narrow upper part and a wide lower part can be formed on the insulating layer 143, so that the growth morphology is limited during the deposition of electrode materials, a trapezoid electrode is formed, the binding force between the electrode and the cell substrate 141 is improved, meanwhile, the solar rays are prevented from being blocked from irradiating the cell substrate, and the light energy utilization rate of the photovoltaic cell is improved.

Referring to fig. 24, in one possible implementation, the insulating layer 143 of the battery plate 140 to be photoetched is a negative photoresist, the micro-cylindrical lens array or micro-lens array of the beam focusing unit 130 focuses to form a plurality of focusing points, the plurality of focusing points are located at one side of the insulating layer 143 near the battery plate substrate 141, and the distances between the plurality of focusing points and the surface of the insulating layer 143 near the battery plate substrate 141 are all 0.01 mm-1 mm. At this time, a trapezoid groove with a narrow upper part and a wide lower part can be formed on the insulating layer 143, so that the growth morphology is limited during the deposition of electrode materials, a trapezoid electrode is formed, the binding force between the electrode and the cell substrate 141 is improved, meanwhile, the solar rays are prevented from being blocked from irradiating the cell substrate, and the light energy utilization rate of the photovoltaic cell is improved.

And S30, depositing electrode materials in the electrode pattern grooves through an electroplating process, and removing the patterned insulating layer and the seed layer positioned in the projection of the patterned insulating layer to obtain the photovoltaic cell electrode.

In step S30, electrode material may be deposited in the electrode pattern trenches using electroplating processes commonly used in the art, and the patterned insulating layer and seed layer located in the patterned insulating layer projections may be removed using processes commonly used in the art, such as etching processes.

In one possible implementation, the electrode material is copper. When the electrode material is copper, copper has more excellent conductivity and lower cost than silver paste, and is of great interest to the photovoltaic industry.

Referring to fig. 25, in one possible implementation, the insulating layer 143 is a positive photoresist, and the photoresist thickness ranges between 1 μm and 20 μm, and the insulating layer 143 in the exposed area is removed. The method for manufacturing the photovoltaic cell electrode comprises the following steps: firstly, an electrode pattern groove 145 is formed on an insulating layer 143 of a battery piece 140 to be photoetched by adopting a step S20, a seed layer 142 is exposed, then an electrode material 146 is deposited in the electrode pattern groove 145 by adopting a plating process by adopting a step S30, then the patterned insulating layer 143 and the seed layer 142 positioned in the projection of the patterned insulating layer 143 are etched and removed, and finally the cross section area of the formed electrode of the photovoltaic battery piece is consistent with the shape of the electrode pattern groove 145.

Referring to fig. 26, in one possible implementation, the insulating layer 143 is a negative photoresist, and the photoresist thickness ranges between 1 μm and 20 μm, and the insulating layer 143 remains in the exposed area. The method for manufacturing the photovoltaic cell electrode comprises the following steps: firstly, an electrode pattern groove 145 is formed on an insulating layer 143 of a battery piece 140 to be photoetched by adopting a step S20, a seed layer 142 is exposed, then an electrode material 146 is deposited in the electrode pattern groove 145 by adopting a plating process by adopting a step S30, then the patterned insulating layer 143 and the seed layer 142 positioned in the projection of the patterned insulating layer 143 are etched and removed, and finally the cross section area of the formed electrode of the photovoltaic battery piece is consistent with the shape of the electrode pattern groove 145.

According to the property of the selected insulating layer and the photovoltaic cell piece process, the method can be divided into two steps of lithography of proximity exposure and scanning exposure of a light beam focusing unit, and can also be completed in one step by using the scanning exposure of the light beam focusing unit.

Referring to fig. 27 and 28, in one possible implementation manner, the to-be-photoetched battery slice includes a battery slice substrate 141, a seed layer 142 located on the battery slice substrate, and an insulating layer 143 located on the seed layer 142, where the insulating layer is of a positive photoresist type, the process flow is as follows: the line width of the main grid of the photovoltaic cell is 50 mu m-3 mm, and the first step is to realize the close exposure of the mask of the main grid of the photovoltaic cell at a close exposure station. Firstly, an exposure mask 170 is manufactured, a mask pattern only needs to cover a non-main gate exposure area, the line width of the pattern is set to be 50 mu m-3 mm, and the exposure beam 300 is adopted to realize groove photoetching. And secondly, exposing the sub-grid fine electrode groove of the photovoltaic cell at an exposure station of the beam focusing unit 130 to form an electrode pattern groove line 144, and developing to form an electrode pattern groove 145. Wherein the line width of the auxiliary gate electrode groove is 3-20 μm, and the depth is 1-20 μm.

Referring to fig. 29 and 30, in one possible implementation, the to-be-photoetched battery includes a battery substrate 141, a seed layer 142 located on the battery substrate, and an insulating layer 143 located on the seed layer 142, where the insulating layer is of a negative photoresist type, the process flow is as follows:

The line width of the main grid of the photovoltaic cell is 50 mu m-3 mm, and the first step is to realize the close exposure of the mask of the main grid of the photovoltaic cell at a close exposure station. Firstly, an exposure mask 170 is manufactured, a mask pattern is required to shade a main grid, an auxiliary grid and peripheral bleeding areas of the auxiliary grid (the line width of the auxiliary grid is smaller, the line width of the proximity exposure is larger than 50 mu m, and the fine line width cannot be directly obtained by adopting a proximity exposure mode, so that an edge area is required to be reserved for correction exposure, and the edge area can be arranged on one side or two sides of the auxiliary grid). In order to improve the auxiliary grid correction exposure efficiency, the line width of the shielding auxiliary grid area is set to be as small as possible and is generally set in the range of 50-300 mu m. The main gate electrode trench exposure is performed, the exposure area 210 is shown in fig. 30, and the exposure beam 300 is used to realize the lithography of the trench with the line width of 50 μm-3 mm on the main gate of the photovoltaic cell.

And secondly, scanning and exposing the light beam focusing unit 130 to expose the grooves of the fine electrode of the sub-grid of the photovoltaic cell. Performing correction exposure on the unexposed area around the auxiliary gate through the exposure of the micro-cylindrical lens array and the movement of the platform, and when the bleeding area is one side of the auxiliary gate, performing correction exposure at least once to eliminate the bleeding on one side of the groove of the auxiliary gate electrode; when the bleeding areas are on two sides of the auxiliary gate, the correction exposure is performed at least twice, the bleeding on the left side and the right side of the groove of the auxiliary gate electrode is eliminated, and only the linewidth of the auxiliary gate is left. Forming sub-gate electrode pattern grooves with line width of 3-20 μm and depth of 1-20 μm.

Referring to fig. 31, in one possible implementation, when the photovoltaic cell without main grid is manufactured by using the negative photoresist process, the process flow is as follows:

the first step is sub-gate outer area proximity mask exposure. Firstly, an exposure mask 170 is manufactured, a mask pattern is required to shade the auxiliary grid and a bleeding area around the auxiliary grid (the line width of the auxiliary grid is smaller, the line of the proximity exposure is larger than 50 mu m, and the line cannot be directly obtained by adopting a proximity exposure mode, so that the bleeding area is required to be left and then corrected, and the bleeding area can be on one side or two sides of the auxiliary grid). In order to improve the auxiliary grid correction exposure efficiency, the line width of the shielding auxiliary grid area is set to be as small as possible and is generally set in the range of 50-300 mu m.

And secondly, scanning and exposing the light beam focusing unit to realize the exposure of the fine electrode groove of the sub-grid of the photovoltaic cell. Performing correction exposure on the unexposed area around the auxiliary gate through the exposure of the focusing micro-cylindrical lens array and the movement of the platform, and when the edge area is one side of the auxiliary gate, performing correction exposure at least once to eliminate the edge area on one side of the groove of the auxiliary gate electrode; when the edge areas are on two sides of the auxiliary gate, the correction exposure is performed at least twice, the edge areas on the left and right sides of the auxiliary gate electrode groove are eliminated, and only the auxiliary gate width is left. After development, sub-gate electrode trenches 145 having a line width of 3 μm to 20 μm and a depth of 3 μm to 15 μm are formed.

In one possible implementation, the collimated beam 400 is scanned along the Y direction of the length of the lenses in the array of micro-lenses in the beam focusing unit 130, as shown in fig. 32 and 33, respectively. In fig. 32 and 33, the battery to be photoetched includes a battery substrate 141, a seed layer 142 on the battery substrate, and an insulating layer 143 on the seed layer 142. Specifically, according to the coverage area of the focusing micro-cylindrical lens array designed by the system, the system can firstly scan one group of electrode grooves on the battery piece to be photoetched, and then splice to realize the exposure scanning of the electrode grooves of the other group of photovoltaic battery pieces. The exposure scanning of all the electrode grooves of the photovoltaic cell can be completed by one-time scanning.

In a possible implementation, referring to fig. 34, in order to ensure uniformity of line width of the exposure trench of the focusing micro-cylindrical lens in the beam focusing unit 130, an overlapping splice exposure mode may also be used for the scanning area of the battery piece 140 to be photoetched. In this embodiment, 1/2 overlap exposure can be performed on the scanning area, so that the battery piece 140 to be photoetched is subjected to 2 times exposure overlap; of course, more lap exposure modes may be employed.

When the electrode of the photovoltaic cell is manufactured, the to-be-photoetched cell is placed on a platform for conveying a workpiece, a vacuum adsorption device is arranged on the workpiece platform and used for fixing the photovoltaic cell, and the platform for conveying the workpiece can rapidly move along an X-axis to accurately position and convey the photovoltaic cell to be processed.

Further, a photovoltaic cell positioning and identifying camera and a u/v/w alignment platform are arranged above the conveying workpiece platform, and position identification and position correction are carried out on the photovoltaic cell placement.

In one possible implementation, referring to fig. 35, in order to improve the conveying efficiency of the battery piece 140 to be photoetched, a double-workpiece platform interactive conveying manner may be set. One workpiece stage 310 performs photolithography operations and the other workpiece stage 320 performs loading, transporting and waiting actions of the battery cells 140 to be lithographically formed. After the photolithography is completed, the work piece platform 310 is waited to enter the photolithography station, and the other work piece platform 320 outputs the photo-voltaic cell after the photolithography is completed, and meanwhile, the actions of loading, transmitting and waiting the photo-voltaic cell are performed. Therefore, the double-workpiece platform alternately operates, so that the whole operation flow time is saved, and the efficiency is improved.

In one possible implementation, referring to fig. 36, in order to improve the conveying efficiency of the battery piece 140 to be photoetched, a rotary workpiece stage may be provided to operate alternately. The rotary workpiece platforms are provided with more than three stations, the first workpiece platform 410 realizes the solar cell slice loading action, the second workpiece platform 420 realizes the photovoltaic cell slice groove photoetching action, and the third workpiece platform 430 realizes the photovoltaic cell slice output action. The three work piece platforms alternately and circularly run so as to save the whole operation flow time and improve the efficiency.

By adopting the manufacturing method of the photovoltaic cell electrode, a plurality of groups of spatial light modulators, projection optical systems and illumination optical systems are not needed, so that the development cost of the device is reduced by times; data processing and multi-path light path overlapping alignment are not needed, so that the manufacturing reliability and efficiency are improved; the photoetching of electrode pattern grooves with high depth-to-width ratio, such as 3-20 μm line width, 1-20 μm depth and depth-to-width ratio of 0.3-2, can be realized, so that the photovoltaic cell electrode with high quality is obtained.

The photovoltaic cell electrode of an embodiment is manufactured by adopting the manufacturing method of any one of the photovoltaic cell electrodes.

By adopting the manufacturing method of the photovoltaic cell electrode, the photoetching of electrode pattern grooves with higher depth-to-width ratio, such as 3-20 μm line width, 1-20 μm depth and depth-to-width ratio of 0.3-2, can be realized, so that the photovoltaic cell electrode with better quality is obtained.

An embodiment of the photovoltaic cell comprises the photovoltaic cell electrode.

The photovoltaic cell of the technical scheme of the utility model comprises the photovoltaic cell electrode, and can realize the photoetching of electrode pattern grooves with higher depth-to-width ratio such as 3-20 μm line width, 1-20 μm depth and depth-to-width ratio of 0.3-2 due to the action of the light beam focusing unit, thereby realizing fine electrode pattern grooves, and being beneficial to wide application.

An embodiment of the photovoltaic cell comprises the photovoltaic cell piece.

The photovoltaic cell of the technical scheme of the utility model comprises the photovoltaic cell, and the photovoltaic cell comprises the photovoltaic cell electrode, and can realize the photoetching of electrode pattern grooves with higher depth-to-width ratio such as 3-20 μm line width and 1-20 μm depth and depth-to-width ratio of 0.3-2 due to the action of the light beam focusing unit, so that the fine electrode pattern grooves are realized, and the photovoltaic cell of the utility model is beneficial to wide application.

The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.

The above examples illustrate only a few embodiments of the utility model, which are described in detail and are not to be construed as limiting the scope of the utility model. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the utility model, which are all within the scope of the utility model. Accordingly, the scope of protection of the present utility model is to be determined by the appended claims.

Claims (15)

1. The manufacturing device of the photovoltaic cell electrode is characterized by comprising a laser source, a collimated light beam generating unit and a light beam focusing unit;

the collimated light beam generating unit is positioned at the light emitting side of the laser source and is used for converting the laser beam emitted by the laser source into a collimated light beam and projecting the collimated light beam to the light beam focusing unit;

the beam focusing unit is positioned on the light emitting side of the collimated beam generating unit and is used for focusing the collimated beam onto the battery piece to be photoetched.

2. The device for manufacturing the electrode of the photovoltaic cell according to claim 1, wherein the beam focusing unit is provided with a micro-cylindrical lens array or a micro-lens array, and the lens of the micro-cylindrical lens array or the micro-lens array faces towards or away from the cell to be photoetched.

3. The device for manufacturing the electrode of the photovoltaic cell according to claim 2, wherein the micro-cylindrical lens array corresponds to the positions of the secondary grids of the cell to be photoetched one by one, and the periods of the micro-cylindrical lens array and the secondary grids of the cell to be photoetched are the same.

4. The device for manufacturing the photovoltaic cell electrode according to claim 2, wherein the period of the micro-cylindrical lens array is 0.1 mm-3 mm, and the numerical aperture of the micro-cylindrical lens array is 0.005-0.15.

5. The device for manufacturing the photovoltaic cell electrode according to claim 2, wherein the micro-cylindrical lens array comprises a plurality of cylindrical lenses which are periodically arranged along the row direction or the column direction, and the interval between two adjacent cylindrical lenses is 0-0.2 mm.

6. The apparatus for manufacturing a photovoltaic cell electrode according to claim 1, wherein the beam focusing unit is a diffractive optical element, and a diffraction surface of the diffractive optical element faces the collimated beam generating unit.

7. The device for manufacturing a photovoltaic cell electrode according to claim 1, wherein the beam focusing unit comprises a first micro-cylindrical lens array device and a second micro-cylindrical lens array device which are sequentially arranged along a light-emitting path, the first micro-cylindrical lens array device and the second micro-cylindrical lens array device are placed in a confocal manner, a lens surface of the first micro-cylindrical lens array device is opposite to a lens surface of the second micro-cylindrical lens array device, and a focal length of the first micro-cylindrical lens array device is larger than a focal length of the second micro-cylindrical lens array device.

8. The device for manufacturing a photovoltaic cell electrode according to claim 7, wherein the beam focusing unit further comprises a first light shielding mask for shielding stray light or a main grid region of a cell to be photoetched, the first light shielding mask is located at confocal focal plane positions of the first micro-cylindrical lens array device and the second micro-cylindrical lens array device, the first light shielding mask is provided with a plurality of openings, and the plurality of openings are in one-to-one correspondence with positions of a plurality of confocal focuses of the first micro-cylindrical lens array device and the second micro-cylindrical lens array device.

9. The device for manufacturing a photovoltaic cell electrode according to claim 1, wherein the collimated light beam is a quasi-straight light beam or a collimated plane light beam.

10. The device for manufacturing the photovoltaic cell electrode according to claim 9, wherein the collimated light beam generating unit comprises a light beam transmission assembly and at least one group of light beam diffusion assemblies which are sequentially arranged along the light emergent light path, and the light beam diffusion assemblies comprise a diffusion lens and a collimating lens which are sequentially arranged along the light emergent light path;

the diffusion lens is positioned at the light-emitting side of the light beam transmission assembly and used for diffusing the laser beam formed by the light beam transmission assembly onto the collimating lens; the collimating lens is positioned on the light emergent side of the diffusion lens and is used for projecting parallel light beams formed by the laser beams passing through the diffusion lens to the light beam focusing unit.

11. The apparatus for manufacturing a photovoltaic cell electrode according to claim 10, wherein the beam transmission assembly comprises:

the vibrating mirror is positioned at the light emitting side of the laser source and is used for changing the direction of the laser beam emitted by the laser source; and

and the field lens is positioned on the light emergent side of the galvanometer and is used for focusing the laser beam formed by the galvanometer onto the diffusion lens.

12. The apparatus of claim 10, wherein the beam transmission assembly comprises a turning mirror for changing the direction of the laser beam emitted from the laser source and projecting the laser beam onto the diffusion lens.

13. The apparatus of claim 10, wherein the beam delivery assembly comprises at least one mirror for redirecting the laser beam emitted from the laser source and projecting the laser beam onto the diffusion lens.

14. The apparatus for manufacturing a photovoltaic cell electrode according to claim 10, wherein the collimated beam generating unit further comprises a beam shaping assembly, the beam shaping assembly being located between the laser source and the beam transmitting assembly.

15. The apparatus for manufacturing a photovoltaic cell electrode according to any one of claims 1 to 14, further comprising a second light-shielding mask for shielding stray light, wherein the second light-shielding mask is located between the collimated light beam generating unit and the light beam focusing unit or between the light beam focusing unit and the cell to be lithographically manufactured.