CN219372403U - Bulk acoustic wave resonant structure and acoustic wave device - Google Patents
Bulk acoustic wave resonant structure and acoustic wave device Download PDFInfo
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- CN219372403U CN219372403U CN202223285822.8U CN202223285822U CN219372403U CN 219372403 U CN219372403 U CN 219372403U CN 202223285822 U CN202223285822 U CN 202223285822U CN 219372403 U CN219372403 U CN 219372403U
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Abstract
The utility model provides a bulk acoustic wave resonance structure and an acoustic wave device, wherein the bulk acoustic wave resonance structure comprises: the piezoelectric device comprises a substrate, a piezoelectric layer, a cavity structure, a lower electrode and a first lead; the piezoelectric layer is positioned on the substrate; the cavity structure is positioned between the piezoelectric layer and the substrate; the lower electrode is positioned at one side of the cavity structure, which is close to the piezoelectric layer; the first lead is electrically connected with the lower electrode, and part of the first lead is positioned in the cavity structure; according to the utility model, the lower electrode is arranged in the cavity structure, so that one side of the cavity structure, which is close to the piezoelectric layer, is a plane or an approximate plane, the piezoelectric layer can reduce one-time climbing, more piezoelectric layers grow in the horizontal direction, dislocation and fracture caused by abrupt change of the crystal column direction are reduced, and better lattice growth can be ensured; the utility model also arranges part of the first lead in the cavity structure, thereby avoiding affecting the piezoelectric layer.
Description
Technical Field
The present disclosure relates to semiconductor technology, and more particularly, to a bulk acoustic wave resonant structure and an acoustic wave device.
Background
At present, the cross-section structure of a film bulk acoustic resonator (Film Bulk Acoustic Resonator, FBAR) is divided into two types, one type is that a cavity is formed in a substrate, the whole device is in a stack of flat film layers, the stability of the structure is relatively good, the climbing phenomenon of the film layers does not exist, but the process implementation difficulty is high, and fragments are easily caused in the process of etching the surface of the substrate to form the cavity; the other structure cavity is arranged above the substrate, the cross section of the whole device is arch-bridge-shaped, and the piezoelectric layer above the lower electrode has two climbing processes, so that the piezoelectric layer generates lattice dislocation, the performance of the device is influenced, even the device is invalid, and in addition, the arrangement of the lower electrode lead wire also easily influences the piezoelectric layer.
Disclosure of Invention
Accordingly, the present utility model is directed to a bulk acoustic wave resonant structure and an acoustic wave device, which are used for solving the technical problems of lattice dislocation generated by secondary climbing of a piezoelectric layer, device performance influence, and influence of the arrangement of a lower electrode lead on the piezoelectric layer in the related art.
In order to achieve the above purpose, the technical scheme of the utility model is realized as follows:
the embodiment of the utility model provides a bulk acoustic wave resonance structure, which comprises: the piezoelectric device comprises a substrate, a piezoelectric layer, a cavity structure, a lower electrode and a first lead; the piezoelectric layer is positioned on the substrate; the cavity structure is positioned between the piezoelectric layer and the substrate; the lower electrode is positioned at one side of the cavity structure close to the piezoelectric layer; the first lead is electrically connected with the lower electrode, and part of the first lead is positioned in the cavity structure.
In some embodiments, a first via is formed in the substrate, and an end of the first lead remote from the lower electrode fills the first via.
In some embodiments, the first lead includes a sloped section and a flat section; the inclined section is positioned in the cavity structure and is attached to the piezoelectric layer; and two sides of the straight section are respectively attached to the piezoelectric layer and the substrate.
In some embodiments, a width of the first lead is greater than or equal to a thickness of the lower electrode in an extension direction perpendicular to the first lead.
In some embodiments, the piezoelectric layer includes a first bevel disposed separately from the substrate, the first bevel forming a first angle with the substrate, the first angle being greater than or equal to 5 degrees and less than or equal to 50 degrees.
In some embodiments, the bulk acoustic wave resonant structure further comprises: an upper electrode and a frequency modulation layer; the upper electrode is positioned on the piezoelectric layer and comprises a second inclined plane; the frequency modulation layer is positioned on the piezoelectric layer and the upper electrode; and a second included angle is formed between the second inclined plane and the substrate, and the second included angle is larger than or equal to 20 degrees and smaller than or equal to 45 degrees.
In some embodiments, the second included angle is equal to the first included angle.
In some embodiments, the second bevel is coplanar with the first bevel.
In some embodiments, in one longitudinal section through the piezoelectric layer, the lower electrode, and the substrate, the lower electrode is any one of inverted trapezoid, rectangle, positive trapezoid in shape.
In some embodiments, the cavity structure is formed after etching a sacrificial layer provided with a recessed structure that accommodates the first lead and the lower electrode.
The embodiment of the utility model also provides an acoustic wave device which comprises the bulk acoustic wave resonant structure.
The utility model provides a bulk acoustic wave resonance structure, comprising: the piezoelectric device comprises a substrate, a piezoelectric layer, a cavity structure, a lower electrode and a first lead; the piezoelectric layer is positioned on the substrate; the cavity structure is positioned between the piezoelectric layer and the substrate; the lower electrode is positioned at one side of the cavity structure, which is close to the piezoelectric layer; the first lead is electrically connected with the lower electrode, and part of the first lead is positioned in the cavity structure; according to the utility model, the lower electrode is arranged in the cavity structure, so that one side of the cavity structure, which is close to the piezoelectric layer, is a plane or an approximate plane, the piezoelectric layer can reduce one-time climbing, more piezoelectric layers grow in the horizontal direction, dislocation and fracture caused by abrupt change of the crystal column direction are reduced, and better lattice growth can be ensured; the utility model also arranges part of the first lead in the cavity structure, thereby avoiding affecting the piezoelectric layer.
Drawings
FIG. 1 is a schematic diagram of a bulk acoustic wave resonant structure of the related art;
FIG. 2 is a schematic diagram of a bulk acoustic wave resonant structure according to an embodiment of the present utility model;
FIG. 3 is a schematic diagram of another bulk acoustic wave resonant structure according to an embodiment of the present utility model;
FIGS. 4a to 4c are schematic views illustrating basic structures of the bottom electrode according to embodiments of the present utility model;
FIG. 5 is a schematic diagram of a bulk acoustic wave resonator structure according to an embodiment of the present utility model;
fig. 6a to 6f are schematic views of basic structures of components in a process of manufacturing a semi-finished product of the bulk acoustic wave resonant structure of fig. 5;
FIG. 7 is a schematic diagram of another bulk acoustic wave resonator structure according to an embodiment of the present utility model;
fig. 8a to 8e are schematic basic structures of each component in the manufacturing process of the semifinished product of the bulk acoustic wave resonator structure of fig. 7.
Detailed Description
The technical scheme of the utility model is further elaborated below by referring to the drawings in the specification and the specific embodiments. In the drawings, the size and thickness of the components depicted in the drawings are not to scale for clarity and ease of understanding and description.
As shown in fig. 1, a schematic diagram of a bulk acoustic wave resonant structure of the related art is shown, where the bulk acoustic wave resonant structure includes: substrate 100, cavity structure 200, lower electrode 300, piezoelectric layer 400, and upper electrode 500. The piezoelectric layer 400 has a wurtzite crystal structure, and generally adopts aluminum nitride, zinc oxide, or the like, and the thin film unit cell thereof grows in a columnar shape. The constituent materials of the lower electrode 300 and the upper electrode 500 may be the same, and specifically may include: gold (Au), aluminum (Al), molybdenum (Mo), ruthenium (Ru), iridium (Ir), platinum (Pt), or the like. Due to the influence of the height of the cavity structure 200 and the thickness of the lower electrode 300, the piezoelectric layer 400 is inclined at the side wall A1 of the cavity structure 200 and the side wall A2 of the lower electrode 300, so that the piezoelectric layer 400 has two climbing processes, however, lattice dislocation can be generated during the climbing process, the performance of the device is influenced, even the device is invalid, and in addition, the arrangement of the lower electrode lead (not shown) also easily influences the piezoelectric layer 400.
Fig. 2 is a schematic diagram of a bulk acoustic wave resonant structure according to an embodiment of the present utility model, where the bulk acoustic wave resonant structure includes: a substrate 100, a piezoelectric layer 400, a cavity structure 200, a lower electrode 300, a first lead 301, and an upper electrode 500; the piezoelectric layer 400 is located on the substrate 100; the cavity structure 200 is located between the piezoelectric layer 400 and the substrate 100; the lower electrode 300 is located on a side of the cavity structure 200 adjacent to the piezoelectric layer 400; the first lead 301 is electrically connected to the lower electrode 300, and a portion of the first lead 301 is located in the cavity structure 200.
It can be appreciated that, by arranging the lower electrode 300 in the cavity structure 200, one side of the cavity structure 200, which is close to the piezoelectric layer 400, is a plane S or an approximate plane, so that the piezoelectric layer 400 can reduce one-time climbing, more piezoelectric layers 400 grow in the horizontal direction, dislocation and fracture caused by abrupt change of the crystal column direction are reduced, and better lattice growth can be ensured; the utility model also arranges part of the first lead 301 in the cavity structure 200, thereby avoiding the influence of the first lead 301 on the piezoelectric layer 400 and improving the performance of the device.
Specifically, in one embodiment, the substrate 100 is formed with a first through hole 101, and an end of the first lead 301 remote from the lower electrode 300 fills the first through hole 101. I.e. the first lead 301 of the present embodiment, is led out through the first via 101 on the substrate 100.
It can be understood that the size of the resonance area is determined according to the facing areas of the lower electrode 300 and the upper electrode 500, and in this embodiment, the first lead 301 is led out through the first through hole 101 on the substrate 100, which does not affect the piezoelectric layer 400 or the facing areas of the lower electrode 300 and the upper electrode 500, thereby improving the effective area of the resonator and facilitating the miniaturization design of the device.
It should be noted that, the first lead 301 shown in fig. 2 may be disposed by using a through silicon via (Through Silicon Via, TSV) technology. In addition, the upper electrode 500 is led out by a second lead (not shown), and the orthographic projection of the leading end of the second lead on the substrate is not overlapped with the orthographic projection of the leading end of the first lead 301 on the substrate. For example, the first lead 301 in fig. 2 may be led out from the left side of the bulk acoustic wave resonator structure, the second lead may be led out from the right side of the bulk acoustic wave resonator structure, and the second lead may also be led out from the second via hole by providing a second via hole (not shown) on the substrate 100 for facilitating subsequent bonding.
In one embodiment, the width w of the first lead 301 is greater than or equal to the thickness h1 of the lower electrode 300 in the extending direction perpendicular to the first lead 301. Wherein the thickness h1 of the lower electrode 300 is several hundred nanometers.
Note that, in fig. 2, the first lead 301 extends vertically, and the width w of the first lead 301 refers to the width of the first lead 301 in the horizontal direction. The present embodiment can reduce the resistance of the first lead 301 and reduce the transmission loss of signals by increasing the width of the first lead 301, i.e., increasing the cross-sectional area of the first lead 301.
In one embodiment, the piezoelectric layer 400 includes a first inclined plane 401 disposed separately from the substrate 100, and a first angle α1 is formed between the first inclined plane 401 and the substrate 100, where the first angle α1 is greater than or equal to 5 degrees and less than or equal to 50 degrees, for example, the first angle α1 is equal to 20 degrees.
It should be noted that, the projection width d2 of the first inclined plane 401 in the horizontal direction is determined by the height h2 of the cavity structure 200 and the first included angle α1, where the height h2 of the cavity structure 200 is greater than the thickness h1 of the lower electrode 300.
In one embodiment, a distance d1 between the lower electrode 300 and an edge of the cavity structure 200 is greater than or equal to 0 on a plane S of a side of the cavity structure 200 near the piezoelectric layer 400. When d1 is equal to 0, the maximization of the area of the resonance region can be realized; when d1 is larger than 0, the sound waves can form total reflection at the transverse interface, sound wave leakage is reduced, and the Q value is improved.
In one embodiment, the bulk acoustic wave resonant structure further comprises a tuning layer 600; the upper electrode 500 is located on the piezoelectric layer 400, and the upper electrode 500 includes a second inclined surface 501; the tuning layer 600 is positioned on the piezoelectric layer 400 and the upper electrode 500; wherein a second angle α2 is formed between the second bevel 501 and the substrate 100, and the second angle α2 is greater than or equal to 20 degrees and less than or equal to 45 degrees, for example, the second angle α2 is equal to 25 degrees.
Note that, the tuning layer 600 is generally made of the same material as the piezoelectric layer 400.
In one embodiment, the second included angle α2 is equal to the first included angle α1, for example α2=α1=30 degrees.
In one embodiment, the second inclined plane 501 is coplanar with the first inclined plane 401, so that the second climbing of the fm layer 600 can be avoided, more fm layers 600 can be grown in the horizontal direction, dislocation and fracture caused by abrupt change of the direction of the crystal column are reduced, better lattice growth can be ensured, and device performance is improved.
Next, referring to fig. 3, a schematic view of another bulk acoustic wave resonant structure according to an embodiment of the present utility model is provided, unlike the bulk acoustic wave resonant structure of fig. 2, in this embodiment, the first lead 301 includes an inclined section 31 and a straight section 32; the inclined section 31 is located in the cavity structure 200 and is attached to the piezoelectric layer 400; the two sides of the straight section 32 are respectively attached to the piezoelectric layer 400 and the substrate 100.
It can be appreciated that, in this embodiment, by disposing the inclined section 31 in the cavity structure 200, not only signals can be transmitted, but also the side of the cavity structure 200 close to the piezoelectric layer 400 can be a plane S or an approximate plane, that is, the side of the inclined section 31 close to the piezoelectric layer 400 is located in the plane S or below the plane S, so that the piezoelectric layer 400 can reduce one climbing, more piezoelectric layers 400 grow in the horizontal direction, dislocation and fracture caused by abrupt change of the crystal column direction are reduced, and better lattice growth can be ensured; the influence of the first lead 301 on the piezoelectric layer 400 is avoided, and the device performance is improved.
In one embodiment, the width w of the first lead 301 is greater than or equal to the thickness h1 of the lower electrode 300 in the extending direction perpendicular to the first lead 301. Wherein the thickness h1 of the lower electrode 300 is several hundred nanometers.
Note that, in fig. 3, the inclined section 31 extends obliquely, and the width w of the first lead 301 refers to the width of the inclined section 31 in the direction perpendicular to the oblique direction; the straight section 32 extends horizontally, and the width w of the first lead 301 refers to the width of the straight section 32 in the vertical direction. The present embodiment can reduce the resistance of the first lead 301 and reduce the transmission loss of signals by increasing the width of the first lead 301, i.e., increasing the cross-sectional area of the first lead 301.
Next, referring to fig. 4a to 4c, a basic structure of the bottom electrode according to an embodiment of the present utility model is shown, in this embodiment, in a longitudinal section through the piezoelectric layer 400, the bottom electrode 300, and the substrate 100, the bottom electrode 300 has any one of an inverted trapezoid (as shown in fig. 4 a), a rectangle (as shown in fig. 4 b), and a regular trapezoid (as shown in fig. 4 c).
In one embodiment, the cavity structure 200 is formed after etching the sacrificial layer 700, the sacrificial layer 700 being provided with a recessed structure 701 accommodating the first lead 301 and the lower electrode 300.
It should be noted that, the cavity structure 200 between the piezoelectric layer 400 and the substrate 100 is formed after the sacrificial layer 700 is etched, that is, the sacrificial layer 700 is formed on the substrate 100, then the recess structure 701 for accommodating the first lead 301 and the lower electrode 300 is formed on the sacrificial layer 700, then the piezoelectric layer 400 is formed, and finally the sacrificial layer 700 is removed to obtain the cavity structure 200. The specific process is illustrated in detail by fig. 5 to 8 e.
Fig. 5 is a schematic diagram of a bulk acoustic wave resonator according to an embodiment of the present utility model. Fig. 6a to 6f are schematic basic structures of each component in the process of manufacturing the bulk acoustic wave resonator structure of fig. 5. First, as shown in FIG. 6a, sacrificial material 70 is deposited on substrate 100. Then, as shown in fig. 6b, a photo resist pattern 800 is formed on the sacrificial material 70 using a photolithography process. Then, as shown in fig. 6c, the photoresist pattern 800 is transferred onto the sacrificial material 70 to form a sacrificial layer 700, and the sacrificial layer 700 has a recess for accommodating the lower electrode 300 thereon.
Next, as shown in fig. 6d, the lower electrode 300 is deposited in the recess of fig. 6c, at which time the upper surface of the lower electrode 300 and the upper surface of the sacrificial layer 700 are coplanar.
Next, as shown in fig. 6e, a piezoelectric layer 400 is deposited on the assembly of fig. 6d, and an upper electrode 500 is deposited on the piezoelectric layer 400. Because the upper surface of the lower electrode 300 and the upper surface of the sacrificial layer 700 are coplanar, the piezoelectric layer 400 can be reduced by one climbing, more piezoelectric layers 400 can grow in the horizontal direction, dislocation and fracture caused by abrupt change of the crystal column direction are reduced, better lattice growth can be ensured, and the device performance is improved.
Next, as shown in fig. 6f, a first wiring 301 is fabricated using TSV technology on the substrate 100 side. It can be understood that the size of the resonance area is determined according to the facing areas of the lower electrode 300 and the upper electrode 500, and in this embodiment, the first lead 301 is led out through the first through hole 101 on the substrate 100, which does not affect the piezoelectric layer 400 or the facing areas of the lower electrode 300 and the upper electrode 500, thereby improving the effective area of the resonator and facilitating the miniaturization design of the device.
Fig. 7 is a schematic diagram of a semi-finished product of another bulk acoustic wave resonator structure according to an embodiment of the present utility model. Fig. 8a to 8e are schematic basic structures of each component in the process of manufacturing the bulk acoustic wave resonator structure of fig. 7. First, as shown in FIG. 8a, sacrificial material 70 is deposited on substrate 100. Then, as shown in fig. 8b, a photo resist pattern 800 is formed on the sacrificial material 70 by using a yellow light process, and the photo resist pattern 800 of the present embodiment is different from the photo resist pattern 800 of fig. 6b in that a side of the photo resist pattern 800 of the present embodiment further has a notch for accommodating the first lead 301. Then, as shown in fig. 8c, the photoresist pattern 800 is transferred onto the sacrificial material 70 to form a sacrificial layer 700, and the sacrificial layer 700 has a recess for accommodating the lower electrode 300 and a notch for accommodating the first lead 301.
Next, as shown in fig. 8d, the lower electrode 300 and the first lead 301 are deposited in the recess and notch of fig. 8c and on the substrate 100, at which time the upper surface of the lower electrode 300 and the upper surface of the sacrificial layer 700 and the top of the first lead 301 are coplanar.
Next, as shown in fig. 8e, a piezoelectric layer 400 is deposited on the assembly of fig. 8d, and an upper electrode 500 is deposited on the piezoelectric layer 400. Because the upper surface of the lower electrode 300, the upper surface of the sacrificial layer 700 and the top of the first lead 301 are coplanar, the piezoelectric layer 400 can be reduced by one climbing, more piezoelectric layers 400 grow in the horizontal direction, dislocation and fracture caused by abrupt change of the crystal column direction are reduced, better lattice growth can be ensured, and the device performance is improved.
The embodiment of the utility model also provides an acoustic wave device, which includes the bulk acoustic wave resonant structure, and the bulk acoustic wave resonant structure is shown in fig. 2 to 8e and related description, and is not repeated here.
In summary, the bulk acoustic wave resonant structure provided in the embodiment of the present utility model includes: the piezoelectric device comprises a substrate, a piezoelectric layer, a cavity structure, a lower electrode and a first lead; the piezoelectric layer is positioned on the substrate; the cavity structure is positioned between the piezoelectric layer and the substrate; the lower electrode is positioned at one side of the cavity structure, which is close to the piezoelectric layer; the first lead is electrically connected with the lower electrode, and part of the first lead is positioned in the cavity structure; according to the utility model, the lower electrode is arranged in the cavity structure, so that one side of the cavity structure, which is close to the piezoelectric layer, is a plane or an approximate plane, the piezoelectric layer can reduce one-time climbing, more piezoelectric layers grow in the horizontal direction, dislocation and fracture caused by abrupt change of the crystal column direction are reduced, and better lattice growth can be ensured; the utility model also arranges part of the first lead in the cavity structure, thereby avoiding affecting the piezoelectric layer; the technical problems that lattice dislocation is generated by secondary climbing of the piezoelectric layer in the related technology, the performance of a device is affected, and the arrangement of the lower electrode lead wire affects the piezoelectric layer are solved.
The foregoing description is only of the preferred embodiments of the present utility model, and is not intended to limit the scope of the present utility model.
Claims (11)
1. A bulk acoustic wave resonant structure comprising:
a substrate;
a piezoelectric layer on the substrate;
a cavity structure located between the piezoelectric layer and the substrate;
a lower electrode positioned at one side of the cavity structure near the piezoelectric layer;
and the first lead is electrically connected with the lower electrode, and part of the first lead is positioned in the cavity structure.
2. The bulk acoustic wave resonator structure of claim 1, wherein a first via is formed in the substrate, and an end of the first lead remote from the lower electrode fills the first via.
3. The bulk acoustic wave resonant structure of claim 1, wherein the first lead comprises a sloped section and a flat section; the inclined section is positioned in the cavity structure and is attached to the piezoelectric layer; and two sides of the straight section are respectively attached to the piezoelectric layer and the substrate.
4. The bulk acoustic wave resonator structure according to claim 1, characterized in that the width of the first lead is greater than or equal to the thickness of the lower electrode in an extension direction perpendicular to the first lead.
5. The bulk acoustic wave resonator structure of claim 1, wherein the piezoelectric layer comprises a first inclined surface disposed apart from the substrate, the first inclined surface forming a first angle with the substrate, the first angle being greater than or equal to 5 degrees and less than or equal to 50 degrees.
6. The bulk acoustic wave resonant structure of claim 5, further comprising:
an upper electrode on the piezoelectric layer, the upper electrode including a second bevel;
the frequency modulation layer is positioned on the piezoelectric layer and the upper electrode;
and a second included angle is formed between the second inclined plane and the substrate, and the second included angle is larger than or equal to 20 degrees and smaller than or equal to 45 degrees.
7. The bulk acoustic wave resonator structure of claim 6, wherein the second included angle is equal to the first included angle.
8. The bulk acoustic wave resonator structure of claim 7, wherein the second sloped surface is coplanar with the first sloped surface.
9. The structure according to claim 1, wherein in one longitudinal section through the piezoelectric layer, the lower electrode, and the substrate, the shape of the lower electrode is any one of inverted trapezoid, rectangle, and positive trapezoid.
10. The bulk acoustic wave resonator structure of claim 1, wherein the cavity structure is formed after etching a sacrificial layer provided with a recess structure accommodating the first lead and the lower electrode.
11. An acoustic wave device comprising the bulk acoustic wave resonant structure of any one of claims 1 to 10.
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| CN202223285822.8U CN219372403U (en) | 2022-12-08 | 2022-12-08 | Bulk acoustic wave resonant structure and acoustic wave device |
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| CN202223285822.8U CN219372403U (en) | 2022-12-08 | 2022-12-08 | Bulk acoustic wave resonant structure and acoustic wave device |
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