CN219315070U

CN219315070U - Horizontal LPCVD process furnace

Info

Publication number: CN219315070U
Application number: CN202223592365.7U
Authority: CN
Inventors: 尚海波; 汪祖一
Original assignee: Shanghai Crystal Silicon Material Co ltd
Current assignee: Shanghai Crystal Silicon Material Co ltd
Priority date: 2022-12-30
Filing date: 2022-12-30
Publication date: 2023-07-07
Anticipated expiration: 2032-12-30

Abstract

The application relates to a horizontal LPCVD process furnace, which comprises a cantilever and a dispersion pipe, wherein the dispersion pipe is provided with one or more vertical pipe parts, the vertical pipe parts are provided with air outlet holes, and the vertical pipe parts are arranged at two sides of the position of the cantilever for placing a wafer boat; the LPCVD method is to place one or more vertical crystal boats on the cantilever of the horizontal LPCVD process furnace along the length direction of the furnace tube. The vertical type LPCVD process furnace has the beneficial effects that the vertical type wafer boat is placed in the horizontal type LPCVD process furnace for vapor phase chemical deposition, so that the vertical type LPCVD process furnace has the advantages of both the horizontal type LPCVD process furnace and the vertical type LPCVD process furnace, and the occurrence of wafer edge breakage and chip breakage is reduced.

Description

Horizontal LPCVD process furnace

Technical Field

The present application relates to horizontal LPCVD process furnaces.

Background

LPCVD, low pressure vapor chemical deposition, is used in the deposition process of wafers. Conventional LPCVD process furnaces can be classified into horizontal furnaces and vertical furnaces according to the arrangement direction of furnace tubes.

In the horizontal furnace, furnace tubes as reaction chambers are arranged horizontally, a horizontal boat is placed in the horizontal furnace tubes, wafers are vertically loaded in the horizontal boat, and wafers are arranged horizontally at intervals. The contact position of the horizontal wafer boat and the wafer is mainly concentrated at the bottom of the wafer.

In the vertical furnace, furnace tubes are arranged vertically, vertical boats are disposed in the furnace tubes, wafers are horizontally loaded in the boats, and wafers are arranged vertically at intervals between the wafers. The contact positions of the wafer boat and the vertical wafer are mainly distributed at the peripheral edge of the wafer.

The contact position of the wafer in the horizontal furnace and the horizontal wafer boat is concentrated at the lower part, and defects such as edge breakage, fragments and the like are easy to occur in the LPCVD process. Although the vertical furnace can place a wafer boat for horizontally loading wafers, the vertical furnace has a complicated structure and high cost.

Disclosure of Invention

The main purpose of the present application is to provide a furnace tube internal structure of different horizontal LPCVD process furnaces, so as to realize the placement of a vertical boat with more dispersed stress therein, and to perform LPCVD process.

In order to achieve the above purpose, the present application provides a horizontal LPCVD process furnace, which comprises a cantilever and a dispersion tube, wherein the dispersion tube is provided with one or more vertical tube parts, the vertical tube parts are provided with air outlet holes, and the vertical tube parts are arranged at two sides of the position of the cantilever for placing a wafer boat.

In some embodiments of the present application, the dispersion tube further comprises a main tube portion positioned below the cantilever arm, and the standpipe portion is disposed in communication with the main tube portion.

In some embodiments of the present application, the cantilever is provided with a through hole, and the standpipe is disposed at two sides of the boat through the through hole.

In some embodiments of the present application, the standpipe portion is disposed between two boat locations.

In some embodiments of the present application, the outlet orifices are circumferentially distributed at one or more elevations of the standpipe portion.

A second aspect of the present application relates to an LPCVD method wherein one or more vertical boats are placed along the length of the furnace tube on a cantilever of a horizontal LPCVD process furnace as described in any of the above.

The vertical type LPCVD process furnace has the beneficial effects that the vertical type wafer boat is placed in the horizontal type LPCVD process furnace for vapor phase chemical deposition, so that the vertical type LPCVD process furnace has the advantages of both the horizontal type LPCVD process furnace and the vertical type LPCVD process furnace, and the occurrence of wafer edge breakage and chip breakage is reduced.

Drawings

FIG. 1 is a schematic and schematic illustration of the internal structure of one of the furnace tubes of the LPCVD process furnace of the present application.

In the figure: 100-furnace tube, 110-wafer boat, 120-dispersion tube, 121-main tube portion, 122-standpipe portion, 130-cantilever, 131-through hole, w-wafer.

Detailed Description

In view of the problem that wafers need to stand on a wafer boat due to the necessity of using a horizontal wafer boat in the existing horizontal type LPCVD process furnace, and the problem that wafers and fragments are easily broken due to stress concentration, the present application provides a horizontal type LPCVD process furnace (hereinafter referred to as a "process furnace") capable of using a horizontal type wafer boat in a furnace tube, wherein a dispersion tube in the process furnace has one or more riser portions, air outlet holes are formed in the riser portions, and the riser portions are disposed at two sides of a cantilever where the wafer boat is placed.

In the process furnace, the vertical pipe part in the dispersion pipe can spray the gas for deposition reaction from the positions on two sides of the wafer boat. On the basis, one or more vertical crystal boats can be placed on the cantilever, and the dispersing pipe diffuses reaction gas from two sides of the vertical crystal boat to intervals between the horizontal wafers in the crystal boat through the vertical pipe part, so that the LPCVD process is realized by placing the vertical crystal boat in the horizontal LPCVD process furnace.

The material of dispersion pipe adopts quartz material generally, and standpipe portion wherein can with dispersion pipe other part integrated into one piece, also can constitute through the concatenation of a plurality of pipeline sections by the multiway joint. In one specific structure, the dispersion pipe is provided with a main pipe part communicated with each riser part, one end of the main pipe part passes through the outside of the furnace tube of the process furnace and is connected with a gas source of the reaction gas, the rest part is positioned in the furnace tube, and the external reaction gas passes through the main pipe part and then is led into each riser part and is sprayed out through a gas outlet hole on the riser part.

Further, due to the limitation of the tube diameter of the furnace tube, the number of layers of vertical boats capable of being placed vertically is smaller than that of vertical LPCVD process furnaces, such as the cantilever 130 of the process furnace in FIG. 1, three layers of vertical boats 110 are placed, i.e. a single boat carries three wafers w placed horizontally, but due to the longer length of the furnace tube, one or more vertical boats 110 can be placed horizontally in the furnace tube in practice, so that the number of overall wafers can be relatively increased. And the number of layers of single wafer boat which can be placed can be obviously increased by increasing the tube diameter of the furnace tube.

Take the partial structure in the furnace tube of the horizontal LPCVD process furnace shown in FIG. 1 as an example. Within furnace tube 100 are provided cantilever 130 and dispersion tube 120, dispersion tube 120 comprising a main tube portion 121 and a plurality of riser tube portions 122. The main pipe 121 of the dispersion pipe is transversely arranged below the cantilever 130, the plurality of vertical pipe 121 passes through the through holes 131 on the cantilever 130, and is transversely arranged at two sides of the wafer boat 110 at intervals, and on the vertical pipe 121, gas outlet holes are arranged corresponding to the intervals of wafers w arranged up and down in each wafer boat, and when the LPCVD process is performed by using the process furnace, the reaction gas can be discharged from the gas outlet holes at the positions and spread to the surfaces of each wafer to perform chemical deposition reaction. And because the contact positions of the vertical wafer boat and the wafers are uniformly distributed on the periphery of the wafers, the stress is dispersed, and the problems of wafer edge breakage and fragments caused by stress concentration of the horizontal wafer boat can be avoided.

The examples of the present utility model are intended to be illustrative only and not to limit the scope of the claims, and other substantially equivalent substitutions will occur to those skilled in the art and are intended to be within the scope of the present utility model.

Claims

1. The horizontal LPCVD process furnace comprises a cantilever and a dispersion pipe, and is characterized in that the dispersion pipe is provided with one or more vertical pipe parts, the vertical pipe parts are provided with air outlet holes, and the vertical pipe parts are arranged at two sides of the position of the cantilever for placing the wafer boat.

2. The horizontal LPCVD process furnace as set forth in claim 1 wherein the dispersion tube further includes a main tube portion positioned below the cantilever and the standpipe portion is disposed in communication with the main tube portion.

3. The horizontal LPCVD process furnace as claimed in claim 2, wherein the cantilever has a through hole, and the standpipe is disposed at both sides of the boat through the through hole.

4. The horizontal LPCVD process furnace as recited in claim 1, wherein the standpipe portion is disposed between two boat locations.

5. The horizontal LPCVD process furnace as set forth in claim 1 wherein said gas exit holes are circumferentially distributed at one or more elevations of the standpipe portion.