CN219226309U - Infrared detector - Google Patents
Infrared detector Download PDFInfo
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- CN219226309U CN219226309U CN202320298441.9U CN202320298441U CN219226309U CN 219226309 U CN219226309 U CN 219226309U CN 202320298441 U CN202320298441 U CN 202320298441U CN 219226309 U CN219226309 U CN 219226309U
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Abstract
The utility model discloses an infrared detector which comprises a substrate, a light absorption film layer, a semiconductor film layer and a metal electrode. The light absorption film layer is formed on the surface of the substrate; the semiconductor film layer is formed on the surface of the light absorption film layer and covers the light absorption film layer; a metal electrode is formed on the substrate and electrically connected to the semiconductor thin film layer. According to the infrared detector, the light absorption film layer is arranged between the substrate and the semiconductor film layer, so that the characteristic that the light absorption film layer is difficult to epitaxially grow in situ and high quality on the surface of the semiconductor film layer can be overcome, a vertical heterojunction photoelectric device with controllable interface performance is formed, the built-in field formed in the device can greatly improve the separation and injection efficiency of photo-generated carriers, and the infrared detector and the imaging device with high responsivity can be provided.
Description
Technical Field
The utility model relates to the technical field of detectors, in particular to an infrared detector.
Background
Semiconductor materials with high mobility, such as graphene, are a base material for the next generation of semiconductor film industry as possible alternatives to silicon in the future, and have unique and excellent properties. The high mobility of the semiconductor material with high mobility enables the device to have high photoelectric conversion efficiency, and the semiconductor material with high mobility such as graphene also has wide spectrum light absorption and ultra-high mobility, so that the high-speed and high-sensitivity photoelectric detector can be developed. In addition, due to the zero band gap characteristic of graphene, no optical dead zone exists, and a photoelectric detector with ultra-high optical bandwidth can be developed. The characteristics of graphene enable a graphene-based photodetector to have great application potential.
The light-absorbing material such as lead selenide (PbS) is a compound semiconductor film material with a narrow forbidden bandwidth (0.28-0.48 eV), has good photoconductive effect and low noise, is sensitive to response of external conditions, and is suitable for manufacturing sensitive devices. The infrared detector prepared by the lead selenide film has the characteristics of high quality, high sensitivity and the like.
The information disclosed in this background section is only for enhancement of understanding of the general background of the utility model and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person of ordinary skill in the art.
Disclosure of Invention
The utility model aims to provide an infrared detector, which can overcome the characteristic that the light absorption film layer is difficult to grow in situ and in high quality on the surface of the semiconductor film layer by arranging the light absorption film layer between a substrate and the semiconductor film layer, so as to form a vertical heterojunction photoelectric device with controllable interface performance, and the built-in field formed in the device can greatly improve the separation and injection efficiency of photo-generated carriers, and can provide an infrared detection and imaging device with high responsivity.
To achieve the above object, the present utility model provides an infrared detector comprising:
a substrate;
the light absorption film layer is formed on the surface of the substrate;
the semiconductor film layer is formed on the surface of the light absorption film layer and is arranged to cover the light absorption film layer;
and the metal electrode is formed on the substrate and is electrically connected with the semiconductor film layer.
In one or more embodiments, the light absorbing thin film layer is a lead selenide thin film layer.
In one or more embodiments, the semiconductor thin film layer is a graphene thin film layer.
In one or more embodiments, the semiconductor thin film layer completely covers the light absorbing thin film layer arrangement.
In one or more embodiments, the light absorbing film layer includes Fe 3 O 4 Thin film layer, ti 2 O 3 Film layer, ptS 2 Film layer, ptSe 2 Film layer, pdS 2 Film layer and PdSe 2 One of the film layers.
In one or more embodiments, the semiconductor thin film layer includes one of a molybdenum disulfide thin film layer, a tungsten disulfide thin film layer, a molybdenum diselenide thin film layer, a tungsten diselenide thin film layer, a black phosphorus layer, and a bismuth oxygen chalcogenide thin film layer.
In one or more embodiments, a silicon dioxide dielectric layer is further disposed between the substrate and the light absorbing thin film layer.
In one or more embodiments, a projection of the metal electrode in a direction perpendicular to a thickness direction of the substrate partially overlaps the semiconductor thin film layer.
In one or more embodiments, the projection of the metal electrode in a direction perpendicular to the thickness of the substrate does not overlap with the light absorbing thin film layer.
In one or more embodiments, the metal electrode includes an adhesion layer having a thickness of 20nm and an inert metal layer formed on the adhesion layer having a thickness of 200nm.
In one or more embodiments, the adhesion layer includes a chromium metal adhesion layer or a titanium metal adhesion layer, and the inert metal layer includes an Au layer.
Compared with the prior art, the infrared detector provided by the utility model has the advantages that the light absorption film layer is arranged between the substrate and the semiconductor film layer, so that the characteristic that the light absorption film layer is not easy to grow on the surface of the semiconductor film layer can be overcome, and the infrared detector with high responsivity is provided.
The infrared detector provided by the utility model fully utilizes the advantages of high mobility of the graphene film, good stability and high light absorbance of the lead selenide film, and solves the characteristic of low light absorbance of single graphene.
According to the infrared detector disclosed by the utility model, the graphene film is transferred on the lead selenide film, so that the characteristic that the lead selenide film is difficult to grow in situ and in high quality on the surface of the graphene film can be overcome, a vertical heterojunction photoelectric device with controllable interface performance is formed, the built-in field formed in the device can greatly improve the separation and injection efficiency of photo-generated carriers, and an infrared detection and imaging device with high responsivity can be provided. The infrared detector provided by the utility model can fully exert the advantages of the lead selenide film and the graphene film, and provides the graphene/lead selenide film infrared detector with high responsivity.
Drawings
Fig. 1 is a schematic structural diagram of an infrared detector according to an embodiment of the present utility model.
Fig. 2 to 4 are schematic views of steps for manufacturing an infrared detector according to an embodiment of the present utility model.
Detailed Description
The following detailed description of embodiments of the utility model is, therefore, to be taken in conjunction with the accompanying drawings, and it is to be understood that the scope of the utility model is not limited to the specific embodiments.
Throughout the specification and claims, unless explicitly stated otherwise, the term "comprise" or variations thereof such as "comprises" or "comprising", etc. will be understood to include the stated element or component without excluding other elements or components.
Graphene (Graphene) is a kind of Graphene which is formed by sp 2 Hybrid linked carbon atomsNew materials with sub-close packing into a single layer two-dimensional honeycomb lattice structure, other two-dimensional new materials also include molybdenum disulfide (MoS 2 ) Tungsten disulfide (WS) 2 ) Molybdenum diselenide (MoSe) 2 ) Tungsten diselenide (WSe) 2 ) Black phosphorus (black phosphorus), bismuth oxychalcogenic material (BOX: bi (Bi) 2 O 2 S、Bi 2 O 2 Se、Bi 2 O 2 Te) and the like. The lead selenide is a semiconductor film material with a cubic structure and a narrow forbidden band, has good photoconductive effect, low noise and relatively sensitive reaction to the influence of external conditions, is suitable for manufacturing sensitive devices, and other infrared light absorption materials also comprise Fe 3 O 4 ，Ti 2 O 3 ，PtS 2 ，PtSe 2 ，PdS 2 ，PdSe 2 Etc.
Since the light absorption of a two-dimensional material, particularly a graphene material, is small, the light absorption can be enhanced by increasing the thickness, but characteristics such as carrier mobility of graphene are affected. And most of the preparation methods of graphene have the problems of poor reproducibility, poor structural stability and the like. The intrinsic graphene is low in light absorptivity and lacks of a light gain mechanism, so that when the graphene is applied to a detector, the light response rate of the detector is low. Whereas light absorbing materials such as lead selenide films have a very high light response to infrared light at wavelengths of 1-3 μm. Meanwhile, compared with lead selenide quantum dots, the lead selenide film material has higher light responsivity to short wave infrared, and the light absorbance is improved.
According to the infrared detector structure provided by the utility model, the light absorption film layer is arranged between the substrate and the semiconductor film layer, so that the characteristic that the light absorption film layer is not easy to grow on the surface of the semiconductor film layer can be overcome, meanwhile, the excellent electrical property of the semiconductor film layer is fully exerted, the high light absorption degree of the light absorption film layer is utilized, and the detection performance of a heterojunction device is improved.
As shown in fig. 1, an embodiment of the present utility model provides an infrared detector including a substrate 10, a light absorbing thin film layer 20, a semiconductor thin film layer 30, and a metal electrode 40. The light absorbing thin film layer 20 is formed on the surface of the substrate 10. The semiconductor thin film layer 30 is formed on the surface of the light absorbing thin film layer 20 and is disposed to cover the light absorbing thin film layer 20. The metal electrode 40 is formed on the substrate 10 and electrically connected to the semiconductor thin film layer 30.
The substrate 10 is preferably a silicon substrate, and a 285nm silicon dioxide dielectric layer is formed on the surface of the silicon substrate. The light absorbing thin film layer 20 is formed on a silicon dioxide dielectric layer. The surface of the silicon substrate is polished and then cleaned to remove impurities, particles, residual reagents and the like on the surface of the silicon substrate, so that the surface of the silicon substrate is clean, flat and smooth without contamination.
The light absorbing thin film layer 20 is formed on the silicon dioxide dielectric layer by chemical vapor deposition. The prepared semiconductor thin film layer 30 is transferred to the surface of the light absorbing thin film layer 20 and covered.
In this embodiment, the light absorbing film layer 20 is a lead selenide film layer. The semiconductor thin film layer 30 is a graphene thin film layer. The semiconductor thin film layer 30 is disposed to entirely cover the light absorbing thin film layer 20. Because the light transmittance of the graphene film is up to 97%, the incident light irradiates the surface, and the lead selenide film absorbs photons to generate electron-hole pairs, wherein the holes are transferred into the graphene film under the action of a built-in electric field, and electrons are retained in the lead selenide film. Due to the different carrier mobility of the two materials and the influence of heterojunction between the two materials, the photo-generated holes are transmitted in the graphene film for many times before the photo-generated electron hole pairs are compounded, so that the photoconductive gain of the graphene film is greatly improved.
In other embodiments, the light absorbing film layer 20 may also be Fe 3 O 4 Thin film layer, ti 2 O 3 Film layer, ptS 2 Film layer, ptSe 2 Film layer, pdS 2 Film layer and PdSe 2 One of the film layers. The semiconductor thin film layer 30 may also be a molybdenum disulfide thin film layer, a tungsten disulfide thin film layer, a molybdenum diselenide thin film layer, a tungsten diselenide thin film layer, a black phosphorus layer, or a bismuth oxygen chalcogenide thin film layer (BOX: bi) 2 O 2 S、Bi 2 O 2 Se、Bi 2 O 2 Te).
The metal electrode 40 is disposed on the semiconductor thin film layer 30. The projection of the metal electrode 40 in the direction perpendicular to the thickness of the substrate 10 partially overlaps with the semiconductor thin film layer 30, and the projection of the metal electrode 40 in the direction perpendicular to the thickness of the substrate 10 does not overlap with the light absorbing thin film layer 20. The metal electrode 40 includes an adhesion layer having a thickness of 20nm and an inert metal layer formed on the adhesion layer having a thickness of 200nm. Illustratively, the adhesion layer comprises a chromium metal adhesion layer or a titanium metal adhesion layer. The inert metal layer includes an Au layer.
The structure of the infrared detector of the present utility model will be further described by a description of the manufacturing process of the infrared detector of the present utility model with reference to fig. 2 to 4. It is understood that the structural size and scale of the infrared detector are not representative of actual dimensions in this description.
Referring to fig. 2 and 3, a substrate 10 is provided, a high-quality light-absorbing film layer 20-lead selenide film is grown on the surface of a silicon dioxide dielectric layer of the substrate 10 by a chemical vapor deposition method, and a required part of the light-absorbing film layer 20-lead selenide film is formed after dry etching. Illustratively, a photoresist layer is first spin-coated on the surface of the light-absorbing film layer 20-lead selenide film, a required photoresist structure is left after exposure and development, then the lead selenide film is etched by reactive ions, and then the photoresist layer is removed to obtain the required lead selenide film.
Referring to fig. 4, a high-quality semiconductor thin film layer 30-single layer graphene is grown on the surface of a copper foil by a chemical vapor deposition method, and the graphene is transferred onto a light absorbing thin film layer 20-lead selenide thin film by a standard wet transfer process, and the lead selenide thin film is completely covered. After graphene is transferred, a needed graphene pattern is etched by utilizing photoetching, and then the transferred graphene is subjected to patterning treatment by utilizing oxygen plasma, so that a graphene film which completely covers the lead selenide film is obtained.
Referring to fig. 1, a metal electrode 40 is prepared. Illustratively, a bilayer photoresist is spin coated on the substrate 10 and semiconductor thin film layer 30-monolayer graphene surface, exposed to light and developed to leave a photoresist structure, and then metal is deposited. The metal electrode 40 is composed of two layers of metal, the bottom layer is an adhesion layer, optionally chromium or titanium metal, with a thickness of 20nm, and the upper layer is an inert metal, such as gold (Au), with a thickness of 200nm; and removing the photoresist by using acetone, and stripping off the metal film on the surface of the photoresist at the same time to finally form the metal electrode 40.
Compared with the prior art, the infrared detector provided by the utility model has the advantages that the light absorption film layer is arranged between the substrate and the semiconductor film layer, so that the characteristic that the light absorption film layer is not easy to grow on the surface of the semiconductor film layer can be overcome, and the infrared detector with high responsivity is provided.
The infrared detector provided by the utility model fully utilizes the advantages of high mobility of the graphene film, good stability and high light absorbance of the lead selenide film, and solves the characteristic of low light absorbance of single graphene.
According to the infrared detector disclosed by the utility model, the graphene film is transferred on the lead selenide film, so that the characteristic that the lead selenide film is difficult to grow in situ and in high quality on the surface of the graphene film can be overcome, a vertical heterojunction photoelectric device with controllable interface performance is formed, the built-in field formed in the device can greatly improve the separation and injection efficiency of photo-generated carriers, and an infrared detection and imaging device with high responsivity can be provided. The infrared detector provided by the utility model can fully exert the advantages of the lead selenide film and the graphene film, and provides the graphene/lead selenide film infrared detector with high responsivity.
The foregoing descriptions of specific exemplary embodiments of the present utility model are presented for purposes of illustration and description. It is not intended to limit the utility model to the precise form disclosed, and obviously many modifications and variations are possible in light of the above teaching. The exemplary embodiments were chosen and described in order to explain the specific principles of the utility model and its practical application to thereby enable one skilled in the art to make and utilize the utility model in various exemplary embodiments and with various modifications as are suited to the particular use contemplated. It is intended that the scope of the utility model be defined by the claims and their equivalents.
Claims (10)
1. An infrared detector, comprising:
a substrate;
the light absorption film layer is formed on the surface of the substrate;
the semiconductor film layer is formed on the surface of the light absorption film layer and is arranged to cover the light absorption film layer;
and the metal electrode is formed on the substrate and is electrically connected with the semiconductor film layer.
2. The infrared detector as set forth in claim 1, wherein the light absorbing thin film layer is a lead selenide thin film layer.
3. The infrared detector as set forth in claim 1, wherein the semiconductor thin film layer is a graphene thin film layer.
4. The infrared detector as set forth in claim 1, wherein said semiconductor thin film layer completely covers said light absorbing thin film layer arrangement.
5. The infrared detector as set forth in claim 1, wherein said light absorbing film layer includes Fe 3 O 4 Thin film layer, ti 2 O 3 Film layer, ptS 2 Film layer, ptSe 2 Film layer, pdS 2 Film layer and PdSe 2 One of the film layers.
6. The infrared detector as set forth in claim 1, wherein the semiconductor thin film layer comprises one of a molybdenum disulfide thin film layer, a tungsten disulfide thin film layer, a molybdenum diselenide thin film layer, a tungsten diselenide thin film layer, a black phosphorus layer, and a bismuth oxychalcogen material thin film layer.
7. The infrared detector as set forth in claim 1, wherein a silicon dioxide dielectric layer is further disposed between the substrate and the light absorbing film layer.
8. The infrared detector as set forth in claim 1, wherein a projection of said metal electrode in a direction perpendicular to a thickness of said substrate is partially overlapped with said semiconductor thin film layer; and/or the number of the groups of groups,
the projection of the metal electrode in the direction perpendicular to the thickness direction of the substrate is not overlapped with the light absorption film layer.
9. The infrared detector as set forth in claim 1, wherein the metal electrode comprises an adhesion layer and an inert metal layer formed on the adhesion layer, the adhesion layer having a thickness of 20nm, the inert metal layer having a thickness of 200nm.
10. The infrared detector as set forth in claim 9, wherein said adhesion layer comprises a chromium metal adhesion layer or a titanium metal adhesion layer, and said inert metal layer comprises an Au layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320298441.9U CN219226309U (en) | 2023-02-23 | 2023-02-23 | Infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320298441.9U CN219226309U (en) | 2023-02-23 | 2023-02-23 | Infrared detector |
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| CN219226309U true CN219226309U (en) | 2023-06-20 |
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| CN202320298441.9U Active CN219226309U (en) | 2023-02-23 | 2023-02-23 | Infrared detector |
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