CN219163413U

CN219163413U - Photoelectric position sensor

Info

Publication number: CN219163413U
Application number: CN202320186118.2U
Authority: CN
Inventors: 李京波; 张梦龙; 黄颖; 柯茜
Original assignee: Zhejiang Xinke Semiconductor Co Ltd
Current assignee: Zhejiang Xinke Semiconductor Co Ltd
Priority date: 2023-02-01
Filing date: 2023-02-01
Publication date: 2023-06-09
Anticipated expiration: 2033-02-01

Abstract

The application discloses an optoelectronic position sensor, include: a substrate; an AIN layer disposed over the substrate; the n-GaN layer is arranged above the AIN layer; the intrinsic GaN layer is arranged above the n-GaN layer; the p-InGaN layer is arranged above the intrinsic GaN layer; two first electrodes; the GaN layers are arranged above the AIN layers and are respectively positioned on two sides of the n-GaN layers; two second electrodes; the first electrodes and the second electrodes are arranged above the AIN layer and are respectively positioned on two sides of the n-GaN layer, and the two first electrodes and the two second electrodes form a rectangular structure. According to the method, the AIN layer is arranged on the surface of the substrate and can serve as a buffer layer to avoid oxidization of materials, so that stability of the materials is guaranteed.

Description

Photoelectric position sensor

Technical Field

The utility model relates to the field of semiconductors, in particular to a photoelectric position sensor.

Background

The photoelectric position sensor meets the requirements of information transmission, processing, display, recording, control and the like, and has wide development space. In recent years, due to the increasing demands for sensor accuracy, stability, vibration resistance and impact resistance, current position sensors based on third generation wide bandgap optoelectronic devices, and in particular, sensors based on gallium nitride optoelectronic devices have become popular.

In the structure of the existing photoelectric position sensor, an n-GaN layer is directly deposited on a substrate, so that the material is easy to oxidize and poor in stability.

Disclosure of Invention

The present utility model addresses the above-described problems by providing an optoelectronic position sensor.

The technical scheme adopted by the utility model is as follows:

an optoelectronic position sensor comprising:

a substrate;

an AIN layer disposed over the substrate;

the n-GaN layer is arranged above the AIN layer;

an intrinsic GaN layer disposed over the n-GaN layer;

a p-InGaN layer disposed over the intrinsic GaN layer;

two first electrodes; the GaN layers are arranged above the AIN layers and are respectively positioned on two sides of the n-GaN layers;

two second electrodes; the first electrodes and the second electrodes are arranged above the AIN layer and are respectively positioned on two sides of the n-GaN layer, and the two first electrodes and the two second electrodes form a rectangular structure.

According to the method, the AIN layer is arranged on the surface of the substrate and can serve as a buffer layer to avoid oxidization of materials, so that stability of the materials is guaranteed.

The principle of the application is that the photoelectric response capability of the GaN material to ultraviolet light and a built-in electric field formed by the InGaN/GaN heterojunction cause diffusion movement of electrons and holes when ultraviolet light spots irradiate to a certain place on the surface of the sensor, and the electrons and the holes are collected by the electrode to form photocurrent. When the irradiation point is at different distances from the electrodes on both sides, the resistance that causes the passage of carriers is not the same. At this time, the ratio of the difference between photocurrents collected by the electrodes on both sides to the sum of photocurrents is proportional to the spot position. Therefore, according to this principle, the specific position (ρ, θ) of the spot can be calculated by a formula calculation.

Let ρ=0, θ=0 when the spot center is at the middle position of the device. Performing photocurrent detection on the source leakage currents of the four electrodes by utilizing a source leakage probe; photocurrents of the upper electrode and the lower electrode are respectively (I1 and I2), photocurrents of the left electrode and the right electrode are respectively (I3 and I4), and specific position coordinates of the light spot can be obtained according to the formula rho= (I1-I2)/(I1+I2) and theta= (I3-I4)/(I3+I4), so that specific position monitoring of the light spot is realized.

The iii-nitride wide band gap semiconductor material selected by the application is used as a component part of the photoelectric position sensor, has sensitivity and selectivity to ultraviolet light, is not easily interfered by visible light and near infrared bands and is resistant to high-temperature and high-pressure conditions, and can be produced in a large scale, so that the sensing system has unique market advantages.

In one embodiment of the present utility model, the AIN layer has a thickness of 5-10nm.

In one embodiment of the present utility model, the substrate is a silicon substrate or a sapphire substrate.

In one embodiment of the present utility model, the first electrode is a Ti/Au electrode.

In one embodiment of the present utility model, the second electrode is a Cr/Au electrode.

In one embodiment of the present utility model, the thickness of the n-GaN layer is 200-250nm.

In one embodiment of the present utility model, the thickness of the intrinsic GaN layer is 3um.

In one embodiment of the present utility model, the thickness of the p-InGaN layer is 3nm.

The beneficial effects of the utility model are as follows: according to the method, the AIN layer is arranged on the surface of the substrate and can serve as a buffer layer to avoid oxidization of materials, so that stability of the materials is guaranteed.

Drawings

FIG. 1 is a schematic diagram of an optoelectronic position sensor;

fig. 2 is a graph showing the magnitude of photocurrent collected by electrodes at different positions under the same illumination intensity.

The reference numerals in the drawings are as follows:

1. a substrate; 2. an AIN layer; 3. an n-GaN layer; 4. an intrinsic GaN layer; 5. a p-InGaN layer; 6. a first electrode; 7. and a second electrode.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It will be apparent that the embodiments described are some, but not all, of the embodiments of the present application. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.

In the description of the present application, it should be noted that, the azimuth or positional relationship indicated by the terms "inner", "outer", etc. are based on the azimuth or positional relationship shown in the drawings, or the azimuth or positional relationship that is commonly put when the product of the application is used, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element to be referred to must have a specific azimuth, be configured and operated in a specific azimuth, and therefore should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.

In the description of the present application, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.

The present utility model will be described in detail with reference to the accompanying drawings.

As shown in fig. 1, an optoelectronic position sensor includes:

a substrate 1;

an AIN layer 2 arranged above the substrate 1 and having a thickness of 5-10nm;

an n-GaN layer 3 disposed above the AIN layer 2;

an intrinsic GaN layer 4 disposed above the n-GaN layer 3;

a p-InGaN layer 5 disposed above the intrinsic GaN layer 4;

two first electrodes 6; are arranged above the AIN layer 2 and are respectively positioned at two sides of the n-GaN layer 3;

two second electrodes 7; two first electrodes 6 and two second electrodes 7 are disposed above the AIN layer 2 and on both sides of the n-GaN layer 3, respectively, to form a rectangular structure.

The substrate 1 in this embodiment is a sapphire substrate. In practical use, the silicon substrate can also be used.

In this embodiment, the first electrode 6 is a Ti/Au electrode.

In this embodiment, the second electrode 7 is a Cr/Au electrode.

In this embodiment, the thickness of the n-GaN layer 3 is 200-250nm, the thickness of the intrinsic GaN layer 4 is 3um, and the thickness of the p-InGaN layer 5 is 3nm.

In the photoelectric position sensor, during processing, a 5-10nmAIN layer 2 required by Metal Organic Chemical Vapor Deposition (MOCVD) growth is formed on a substrate 1, then an n-GaN layer 3, an intrinsic GaN layer 4 and a p-InGaN layer 5 are sequentially formed on an AIN layer 2, finally electron beam evaporation and evaporation are used for obtaining two first electrodes 6 and two second electrodes 7, wherein one electrode is a source electrode, and the other electrode is a drain electrode.

According to the method, the AIN layer 2 is arranged on the surface of the substrate 1 and can serve as a buffer layer to avoid oxidation of materials, so that stability of the materials is guaranteed.

Let ρ=0, θ=0 when the spot center is at the middle position of the device. As shown in fig. 1 and 2, photocurrent detection is performed on the source-drain currents of the four electrodes (the two first electrodes 6 and the two second electrodes 7) by using source-drain probes; the photocurrents of the two first electrodes 6 are respectively (I1, I2), the photocurrents of the two second electrodes 7 are respectively (I3, I4), and specific position coordinates of the light spot can be obtained according to the formula ρ= (I1-I2)/(i1+i2), θ= (I3-I4)/(i3+i4), so that specific position monitoring of the light spot is realized. Compared with the previous one-dimensional photoelectric position sensor, the photoelectric position sensor has wider sensing range and quicker response (15% response speed is improved), so that the position coordinates of the light spots can be obtained more accurately and quickly.

The foregoing description is only of the preferred embodiments of the present utility model, and is not intended to limit the scope of the utility model, but rather is intended to cover all equivalent structures as modifications within the scope of the utility model, either directly or indirectly, as may be contemplated by the present utility model.

Claims

1. An optoelectronic position sensor comprising:

a substrate;

an AIN layer disposed over the substrate;

the n-GaN layer is arranged above the AIN layer;

an intrinsic GaN layer disposed over the n-GaN layer;

a p-InGaN layer disposed over the intrinsic GaN layer;

2. The optoelectronic position sensor according to claim 1, wherein the AIN layer has a thickness of 5-10nm.

3. The optoelectronic position sensor of claim 1, wherein the substrate is a silicon substrate or a sapphire substrate.

4. The optoelectronic position sensor of claim 1, wherein the first electrode is a Ti/Au electrode.

5. The optoelectronic position sensor of claim 1, wherein the second electrode is a Cr/Au electrode.

6. The optoelectronic position sensor according to claim 1, wherein the n-GaN layer has a thickness of 200-250nm.

7. The optoelectronic position sensor according to claim 1, wherein the intrinsic GaN layer has a thickness of 3um.

8. The optoelectronic position sensor of claim 1, wherein the p-InGaN layer has a thickness of 3nm.