CN219144160U - Matrix arrangement type power MOS tube - Google Patents

Matrix arrangement type power MOS tube Download PDF

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Publication number
CN219144160U
CN219144160U CN202320045403.2U CN202320045403U CN219144160U CN 219144160 U CN219144160 U CN 219144160U CN 202320045403 U CN202320045403 U CN 202320045403U CN 219144160 U CN219144160 U CN 219144160U
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China
Prior art keywords
power mos
matrix arrangement
copper
fin
fixedly connected
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CN202320045403.2U
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Chinese (zh)
Inventor
刘道国
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Shenzhen Still Core Technology Co ltd
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Shenzhen Still Core Technology Co ltd
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Priority to CN202320045403.2U priority Critical patent/CN219144160U/en
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Abstract

The utility model provides a matrix arrangement type power MOS tube, and relates to the field of semiconductors. This matrix arrangement formula power MOS pipe, including the body, the left and right sides of body all is provided with the pin, and fixed cover has all been cup jointed on the surface of two pins, and one side that two fixed covers are relative respectively with the left side and the right side fixed connection of body, the equal fixedly connected with dead lever of lower surface of two fixed covers, the bottom fixedly connected with copper of two dead levers, the upper surface fixedly connected with fin of copper, the top and the lower surface overlap joint of body of fin. This matrix arrangement formula power MOS pipe, through the mutual combined operation between fixed cover, dead lever, copper and the fin, reach and provide holding power for the pin, can also provide the radiating effect for the body simultaneously, solved current matrix arrangement formula power MOS pipe in welding work, because the too big easy pin deformation or the rupture that causes of pressure dynamics to influence pin welding's problem.

Description

Matrix arrangement type power MOS tube
Technical Field
The utility model relates to the technical field of semiconductors, in particular to a matrix arrangement type power MOS tube.
Background
MOS is the abbreviation of MOSFET, MOSFET metal-oxide semiconductor field effect transistor, short metal oxide semiconductor field effect transistor, and current matrix arrangement formula power MOS tube is in the welding work, because the too big pin deformation or rupture that easily causes of pressure dynamics to influence pin welding.
Disclosure of Invention
The utility model aims to provide a matrix arrangement type power MOS tube, which solves the problem that the welding of pins is affected due to deformation or breakage of pins caused by overlarge pressure force in the welding work of the current matrix arrangement type power MOS tube.
Technical proposal
In order to achieve the above purpose, the utility model is realized by the following technical scheme: the utility model provides a matrix arrangement formula power MOS pipe, includes the body, the left and right sides of body all is provided with the pin, and fixed cover has all been cup jointed on the surface of two pins, and two relative one sides of fixed cover respectively with the left side and the right side fixed connection of body, the equal fixedly connected with dead lever of lower surface of two fixed covers, the bottom fixedly connected with copper of two dead levers, the last fixed surface of copper is connected with the fin, the top of fin and the lower surface overlap joint of body.
Further, the cooling fins are divided into three groups, and the number of each group of cooling fins is five.
The utility model provides a matrix arrangement type power MOS tube. The beneficial effects are as follows:
this matrix arrangement formula power MOS pipe, through the mutual combined operation between fixed cover, dead lever, copper and the fin, reach and provide holding power for the pin, can also provide the radiating effect for the body simultaneously, solved current matrix arrangement formula power MOS pipe in welding work, because the too big easy pin deformation or the rupture that causes of pressure dynamics to influence pin welding's problem.
Drawings
FIG. 1 is a schematic diagram of the structure of the present utility model;
fig. 2 is a front view of the structure of the present utility model.
Wherein, 1 body, 2 pin, 3 fixed cover, 4 dead lever, 5 copper, 6 fin.
Detailed Description
As shown in fig. 1-2, the embodiment of the utility model provides a matrix arrangement type power MOS tube, which comprises a tube body 1, pins 2 are respectively arranged on the left side and the right side of the tube body 1, fixing sleeves 3 are respectively sleeved on the surfaces of the two pins 2, one opposite sides of the two fixing sleeves 3 are respectively fixedly connected with the left side and the right side of the tube body 1, fixing rods 4 are respectively fixedly connected with the lower surfaces of the two fixing sleeves 3, copper plates 5 are fixedly connected with the bottom ends of the two fixing rods 4, radiating fins 6 are fixedly connected with the upper surface of the copper plates 5, the radiating fins 6 are divided into three groups, the number of the radiating fins 6 in each group is five, and the tops of the radiating fins 6 are overlapped with the lower surface of the tube body 1.
Working principle: place body 1 at the circuit board surface, later press down body 1 for pin 2 closely laminates with the circuit board surface, and copper 5 can be with circuit board surface contact simultaneously, and dead lever 4 and copper 5 can provide holding power for body 1 this moment, avoid pin 2 to be bent by the press, in body 1 work, copper 5 and fin 6 can dispel the heat.

Claims (2)

1. The utility model provides a matrix arrangement formula power MOS pipe, includes body (1), its characterized in that: the utility model discloses a solar cell module, including body (1), fixed cover (3) have all been cup jointed on the surface of two pins (2), the left side and the right side fixed connection of body (1) are respectively cup jointed on the surface of two pins (2), the lower surface of two fixed covers (3) is fixed connection dead lever (4) all, the bottom fixedly connected with copper (5) of two dead levers (4), the upper surface fixedly connected with fin (6) of copper (5), the top and the lower surface overlap joint of body (1) of fin (6).
2. The matrix power MOS transistor of claim 1, wherein: the radiating fins (6) are divided into three groups, and the number of the radiating fins (6) in each group is five.
CN202320045403.2U 2023-01-09 2023-01-09 Matrix arrangement type power MOS tube Active CN219144160U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202320045403.2U CN219144160U (en) 2023-01-09 2023-01-09 Matrix arrangement type power MOS tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202320045403.2U CN219144160U (en) 2023-01-09 2023-01-09 Matrix arrangement type power MOS tube

Publications (1)

Publication Number Publication Date
CN219144160U true CN219144160U (en) 2023-06-06

Family

ID=86598839

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202320045403.2U Active CN219144160U (en) 2023-01-09 2023-01-09 Matrix arrangement type power MOS tube

Country Status (1)

Country Link
CN (1) CN219144160U (en)

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