CN219137006U - Substrate bearing table and epitaxial growth equipment - Google Patents

Abstract

The utility model discloses a substrate bearing table and epitaxial growth equipment. The substrate bearing table comprises a first bearing piece and a second bearing piece, wherein the first bearing piece is used for bearing a substrate and is detachably arranged above the second bearing piece, and the first bearing piece and the second bearing piece can be in heat conduction connection. At least one of the first bearing and the second bearing is provided with a local concave structure, and the local concave structure can reduce local heat conduction efficiency between the first bearing and the second bearing. The local heat conduction efficiency between the first supporting piece and the second supporting piece is reduced, so that the local temperature of the substrate can be reduced, and a temperature field meeting the epitaxial growth requirement is realized. And moreover, through changing the first bearing piece or the second bearing piece that are provided with different local concave structures, can conveniently satisfy the production demand of different epitaxial growth demands and different kinds of substrates fast, show the degree of difficulty of reducing control local temperature, improve production efficiency and finished product quality.

Description

Substrate bearing table and epitaxial growth equipment

Technical Field

The utility model relates to the technical field of crystal epitaxial growth, in particular to a substrate bearing table and epitaxial growth equipment.

Background

Epitaxial growth refers to the growth of a single crystal layer (epitaxial layer) with certain requirements and the same crystal orientation as the substrate on a single crystal substrate (substrate), and is a common manufacturing process of semiconductor materials. The silicon wafer having the single crystal layer has advantages of lower defect density and better latch-up resistance, etc., compared to a silicon wafer not including the single crystal layer.

In the chinese patent application No. 201811380441.3, an epitaxial growth apparatus is disclosed, in which a control device and a measuring device are added to measure the temperature of epitaxial growth in a reaction chamber in real time, so that the temperature in the reaction chamber is correspondingly adjusted according to the measurement result, and the yield of epitaxial growth is improved. But there are also the following problems in the epitaxial growth apparatus:

the temperature in the reaction chamber is generally regulated and controlled by a heater, and it is often difficult for the heater to ensure that each position on the substrate is at a proper temperature (i.e., the substrate is in a proper temperature field), which affects the process quality of epitaxial growth.

Based on the foregoing, there is a need for a substrate carrier and an epitaxial growth apparatus that can solve the above-mentioned technical problems.

Disclosure of Invention

An object of the present utility model is to provide a substrate carrying table capable of adjusting a local temperature of a substrate and providing a suitable temperature field for epitaxial growth of the substrate.

To achieve the purpose, the utility model adopts the following technical scheme:

a substrate carrier comprising:

a first support for carrying a substrate;

the first supporting piece is detachably arranged above the second supporting piece, and the first supporting piece and the second supporting piece can be in heat conduction connection;

at least one of the first supporting member and the second supporting member is provided with a local concave structure, and the local concave structure is used for reducing local heat conduction efficiency between the first supporting member and the second supporting member.

Optionally, the mass of the second support is greater than the mass of the first support.

Optionally, the second supporting member is connected with a heating device in a heat conduction manner, and the heating device is used for heating the second supporting member.

Optionally, the first supporting member and the second supporting member are both in a circular tray structure, the second supporting member and the first supporting member are rotatably disposed with a first axis a as a center, and the first axis a is a central axis of the circular tray structure.

Optionally, the partial recess structure is an annular groove, and the annular groove is disposed with the first axis a as a central axis.

Optionally, the annular groove includes a first annular groove and a second annular groove, and the first annular groove is different from the second annular groove in shape and/or size.

Optionally, the local concave structure is a plurality of concave holes, and the plurality of concave holes are circumferentially arranged with the first axis a as a center.

Optionally, a third supporting member is further disposed between the first supporting member and the second supporting member, and the first supporting member and the second supporting member can be in heat conduction connection through the third supporting member.

The utility model also aims to provide epitaxial growth equipment which can adjust the local temperature of the substrate, provide a proper temperature field for epitaxial growth of the substrate and has higher production efficiency and production quality.

To achieve the purpose, the utility model adopts the following technical scheme:

the epitaxial growth equipment comprises a reaction chamber, wherein the substrate bearing table is arranged in the reaction chamber in a replaceable manner and is used for bearing a substrate.

Optionally, the reaction chamber is provided with at least two temperature sensors for measuring a local temperature of the substrate.

The substrate bearing table and the epitaxial growth equipment provided by the utility model have the beneficial effects that: through setting up foretell first bearing spare and second bearing spare, form heat conduction connection between first bearing spare and second bearing spare to at least one in first bearing spare and second bearing spare sets up local concave structure, forms and hinders hot clearance, just can reduce the local heat conduction efficiency between first bearing spare and the second bearing spare, thereby reduces the local temperature of placing the substrate on first bearing spare, realizes satisfying the temperature field of epitaxial growth demand. And, because first bearing spare is the detachable setting in second bearing spare top, through changing first bearing spare or second bearing spare that is provided with different local concave structures, has different local heat conduction efficiency, just can conveniently satisfy different epitaxial growth demands and the production demand of different kinds of substrates fast, show the degree of difficulty of reducing control local temperature, improvement production efficiency and finished product quality.

Drawings

Fig. 1 is a schematic view of the internal structure of an epitaxial growth apparatus provided by the present utility model;

FIG. 2 is an enlarged view of a portion of FIG. 1 at A;

FIG. 3 is a schematic view of the internal structure of the heating device;

FIG. 4 is a top view of a first second bearing;

FIG. 5 is a cross-sectional view taken along B-B in FIG. 4;

FIG. 6 is a top view of a second alternative bearing;

FIG. 7 is a cross-sectional view taken along line C-C of FIG. 6;

fig. 8 is a schematic distance-temperature diagram on a substrate with reference to a first axis a.

In the figure:

1. a reaction chamber;

2. a support frame;

3. a substrate carrying table; 31. a first support; 32. a second support; 321. an annular groove; 3211. a first annular groove; 3212. a second annular groove;

4. a heating plate; 41. an induction coil;

5. a temperature sensor; 51. a first temperature sensor; 52. a second temperature sensor; 53. a third temperature sensor;

6. a substrate.

Detailed Description

In the description of the present utility model, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present utility model and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present utility model. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. Wherein the terms "first position" and "second position" are two different positions.

In the description of the present utility model, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixed or removable, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.

The following description of the embodiments of the present utility model will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the utility model are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

The substrate stage 3 and the epitaxial growth apparatus provided by the present utility model are described below with reference to fig. 1 to 8. The epitaxial growth apparatus comprises a reaction chamber 1, and a substrate carrier 3 is disposed in the reaction chamber 1 for carrying a substrate 6 to be processed.

As shown in fig. 1 and 2, the substrate carrier 3 includes a first support 31 and a second support 32, the first support 31 is detachably disposed above the second support 32, and the substrate 6 is placed on the first support 31. When the first support 31 is mounted above the second support 32, a direct or indirect heat-conducting connection (or called heat conduction, which is the main mode of solid heat transfer) can be formed between the first support 31 and the second support 32, and heat is transferred from the second support 32 to the first support 31 and finally to the substrate 6, so that the substrate 6 is in a proper Wen Changxia, and the process requirements of epitaxial growth are satisfied. At least one of the first support 31 and the second support 32 is provided with a local concave structure, the local concave structure can form a heat-resistant gap, and a local heat transfer mode is changed, so that local heat conduction efficiency between the first support 31 and the second support 32 is reduced, local temperature of the substrate 6 can be reduced, and the local position of the substrate 6 is ensured to be at a proper temperature.

As shown in fig. 1, the first support 31 is placed directly on the second support 32, with a large contact surface between the two, so that a direct heat-conducting connection can be produced. The contact surface between the second supporting member 32 and the second supporting member 32 is provided with the local concave structure, and the inside of the local concave structure forms the heat-resisting gap, so that the local positions between the first supporting member 31 and the second supporting member 32 are not contacted, direct heat conduction connection cannot be formed, and the local heat conduction efficiency between the first supporting member 31 and the second supporting member 32 is reduced. Optionally, in some other embodiments, a third support (not shown) may be disposed between the first support 31 and the second support 32, and the first support 31 and the second support 32 may be connected by indirect heat conduction via the third support, and the local heat transfer efficiency between the first support 31 and the third support or between the third support and the second support 32 may be changed via the above-mentioned local concave structure, so that both direct heat conduction connection and indirect heat conduction connection are within the scope of the present utility model.

Of course, the partial recess structure may be provided on the second support 32 or the first support 31, as long as the above-mentioned heat-blocking gap can be formed. However, compared to the arrangement of the local concave structures on the second supporting member 32, since the first supporting member 31 is directly contacted with the substrate 6, the arrangement of the local concave structures on the first supporting member 31 can significantly increase the manufacturing difficulty and the manufacturing cost of the first supporting member 31 according to the process characteristics, and particularly when the requirements of different heat conducting connections are required to be satisfied, the cost is greatly increased when a plurality of first supporting members 31 with different local concave structures are prepared.

Through setting up foretell first bearing piece 31 and second bearing piece 32, form heat conduction connection between first bearing piece 31 and second bearing piece 32 to at least one in first bearing piece 31 and second bearing piece 32 sets up local concave structure, forms the heat-resisting clearance, just can reduce the local heat conduction efficiency between first bearing piece 31 and the second bearing piece 32, thereby reduces the local temperature of placing the substrate 6 on first bearing piece 31, realizes satisfying the temperature field of epitaxial growth demand. Moreover, since the first supporting member 31 is detachably arranged above the second supporting member 32, the first supporting member 31 or the second supporting member 32 with different local concave structures and different local heat conduction efficiencies can be replaced, so that different epitaxial growth requirements and production requirements of different types of substrates 6 can be rapidly and conveniently met, the difficulty in controlling the temperature is obviously reduced, and the production efficiency is improved.

Referring to fig. 1, in the present embodiment, the epitaxial growth apparatus adopts a vertical production process, the second support 32 and the first support 31 adopt circular tray structures with the same diameter, and the thickness of the second support 32 is greater than that of the first support 31, so that the second support 32 has a larger mass than the first support 31, and a relatively uniform temperature field can be obtained, which is beneficial to realizing a temperature field meeting the requirement of epitaxial growth.

With continued reference to fig. 1, in this embodiment, a support 2 is disposed in the reaction chamber 1, and the second support 32 is disposed at a suitable height in the reaction chamber 1 via the support 2. The heating device is arranged below the second supporting member 32, and the heating device can adopt a heating plate 4 and the like, so that the heating plate 4 generates heat in a resistance heat generation mode, and heat is transferred to the second supporting member 32 in a radiation heat transfer or heat conduction connection mode, so that the substrate 6 is heated by the first supporting member 31 and a proper temperature field is formed. Alternatively, in some other embodiments, as shown in fig. 3, an induction coil 41 may be disposed within the heating pan 4, induction heating, or the like, to cause the second support 32 to self-heat; alternatively, the second support 32 may be self-heating by providing a heating resistance wire within the second support 32. Therefore, in the present utility model, the way of generating heat is not particularly limited, as long as heat can be directly or indirectly transferred from the second support 32 to the first support 31.

Preferably, in some embodiments, referring to fig. 1, the support frame 2 rotates the second support 32 and the first support 31 such that the circumferential temperature differential across the substrate 6 is reduced. Illustratively, the second support 32, the first support 31, and the substrate 6 are rotated about the first axis a such that the same distance of the substrate 6 from the first axis a maintains a uniform temperature. Depending on the heating means or heating pattern used, as shown in fig. 8, locations on the substrate 6 at different distances from the first axis a (corresponding to the horizontal axis-distance R in fig. 8) will be at different local temperatures (corresponding to the vertical axis-temperature T in fig. 8), such that radial temperature differences occur across the substrate 6. Of course, in some specific embodiments, the substrate 6 may be heated in an alternative manner, which is also within the scope of the present utility model.

Referring to fig. 4 and 6, in order to eliminate the radial temperature difference described above, the partial recess structure employs an annular groove 321. The annular groove 321 is arranged by taking the first axis a as a central axis to form an annular heat-resistant gap, and the position of the heat-resistant gap is arranged corresponding to the local high-temperature position of the substrate 6, so that the overall temperature difference on the substrate 6 is reduced, and the substrate 6 is in a more uniform temperature field. Depending on the adjustment requirements (including enlargement and reduction) of the radial temperature difference, annular grooves 321 of different shapes, annular grooves 321 of different sizes, or annular grooves 321 of different shapes and different sizes can be provided. Referring to fig. 2, 5 and 7, in the present embodiment, the annular groove 321 includes a first annular groove 3211 and a second annular groove 3212, where the cross section of the first annular groove 3211 is square, the cross section of the second annular groove 3212 is arc-shaped, and the two annular grooves can form different heat-resisting gaps, respectively, and have different reducing effects on the local heat conduction efficiency between the first supporting member 31 and the second supporting member 32, so as to meet different temperature control requirements, for example, to form the effect of temperature homogenization shown in fig. 8. Of course, in some other embodiments, the local concave structures may be formed by setting a plurality of concave holes, and the plurality of concave holes are circumferentially arranged with the first axis a as the center, so that a similar heat-resisting effect as the annular groove 321 can be achieved, and by setting the local concave structures with different shapes, different positions and different sizes, various temperature control effects can be achieved, and various requirements of the epitaxial growth process are satisfied.

It should be emphasized that, taking the first annular groove 3211 and the second annular groove 3212 as examples, according to different temperature control requirements, the first annular groove 3211 and the second annular groove 3212 may be respectively provided on the two second supporting members 32, and the first annular groove 3211 and the second annular groove 3212 may also be simultaneously provided on the other second supporting member 32, so long as different temperature control effects can be formed, and it is convenient for production personnel to control the temperature field and the local temperature of the substrate 6 by replacing the second supporting members 32.

The utility model also provides epitaxial growth equipment, which comprises a reaction chamber 1, wherein the substrate bearing table 3 is arranged in the reaction chamber 1 in a replaceable manner. At least one of the first supporting member 31 and the second supporting member 32 is provided with a local concave structure to form a heat-resistant gap, so that the local heat conduction efficiency between the first supporting member 31 and the second supporting member 32 can be reduced adaptively, the local temperature of the substrate 6 placed on the first supporting member 31 is reduced, and a temperature field meeting the epitaxial growth requirement is realized. Moreover, since the first supporting member 31 is detachably arranged above the second supporting member 32, the first supporting member 31 with different local concave structures and different local heat conduction efficiencies can be replaced, so that different epitaxial growth requirements and production requirements of different types of substrates 6 can be rapidly and conveniently met, the difficulty of controlling the temperature is obviously reduced, and the production efficiency is improved.

Optionally, the reaction chamber 1 is provided with at least two temperature sensors 5, and the temperature sensors 5 are used for measuring the local temperature of the substrate 6, so that a producer can design and replace the first supporting member 31 or the second supporting member 32 according to the detected local temperature data, thereby improving the production efficiency and controlling the production quality.

Illustratively, in the present embodiment, a first temperature sensor 51, a second temperature sensor 52, and a third temperature sensor 53 are provided. Wherein the first temperature sensor 51 is located in the extending direction of the first axis a and is used for detecting the temperature of the central local part of the substrate 6; the third temperature sensor 53 is located right above the edge portion of the substrate 6 and is used for detecting the temperature of the local portion of the edge of the substrate 6; the second temperature sensor 52 is disposed between the first temperature sensor 51 and the third temperature sensor 53, and is capable of detecting the temperature of a local portion of the substrate 6 between the center and the edge. The provision of the first, second and third temperature sensors 51, 52 and 53 can accurately reflect the distance-temperature relationship (starting from the first axis a) on the substrate 6, thereby assisting the production personnel in determining the specific shape and size of the partial recess structure or in replacing the first or second support 31 or 32 having the corresponding effective partial recess structure.

It is to be understood that the above examples of the present utility model are provided for clarity of illustration only and are not limiting of the embodiments of the present utility model. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the utility model are desired to be protected by the following claims.

Claims (10)

1. A substrate carrier, comprising:

a first support (31), the first support (31) being adapted to carry a substrate (6);

the first bearing (31) is detachably arranged above the second bearing (32), and the first bearing (31) and the second bearing (32) can be in heat conduction connection;

at least one of the first support (31) and the second support (32) is provided with a local concave structure, and the local concave structure is used for reducing local heat conduction efficiency between the first support (31) and the second support (32).

2. Substrate carrier according to claim 1, characterized in that the mass of the second support (32) is greater than the mass of the first support (31).

3. Substrate carrier according to claim 1, characterized in that the second support (32) is thermally connected to heating means for heating the second support (32).

4. A substrate carrier according to claim 3, wherein the first support (31) and the second support (32) are both of a circular tray structure, and the second support (32) and the first support (31) are rotatably arranged about a first axis a, which is a central axis of the circular tray structure.

5. The substrate carrier of claim 4, wherein the partial recess structure is an annular groove (321), and the annular groove (321) is disposed with the first axis a as a central axis.

6. The substrate carrier of claim 5, wherein the annular groove (321) comprises a first annular groove (3211) and a second annular groove (3212), the first annular groove (3211) being different in shape and/or size from the second annular groove (3212).

7. The substrate carrier of claim 5, wherein the partial recess structure is a plurality of recesses, and the plurality of recesses are arranged circumferentially about the first axis a.

8. The substrate carrier of claim 1, wherein a third support is further provided between the first support (31) and the second support (32), the first support (31) and the second support (32) being thermally connectable via the third support.

9. Epitaxial growth apparatus, characterized in that it comprises a reaction chamber (1), said reaction chamber (1) being provided with a substrate carrying stage (3) according to any one of claims 1 to 8, said substrate carrying stage (3) being adapted to carry a substrate (6).

10. Epitaxial growth apparatus according to claim 9, characterized in that the reaction chamber (1) is provided with at least two temperature sensors (5), the temperature sensors (5) being adapted to measure the local temperature of the substrate (6).

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