CN219137004U - 承载装置以及mocvd设备 - Google Patents
承载装置以及mocvd设备 Download PDFInfo
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- CN219137004U CN219137004U CN202320253130.0U CN202320253130U CN219137004U CN 219137004 U CN219137004 U CN 219137004U CN 202320253130 U CN202320253130 U CN 202320253130U CN 219137004 U CN219137004 U CN 219137004U
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title abstract 3
- 230000007246 mechanism Effects 0.000 claims abstract description 116
- 238000010438 heat treatment Methods 0.000 claims abstract description 86
- 238000010926 purge Methods 0.000 claims abstract description 43
- 238000013021 overheating Methods 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 64
- 238000000429 assembly Methods 0.000 claims description 9
- 230000000712 assembly Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 11
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 238000007664 blowing Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202320253130.0U CN219137004U (zh) | 2023-02-20 | 2023-02-20 | 承载装置以及mocvd设备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202320253130.0U CN219137004U (zh) | 2023-02-20 | 2023-02-20 | 承载装置以及mocvd设备 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN219137004U true CN219137004U (zh) | 2023-06-06 |
Family
ID=86599489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202320253130.0U Active CN219137004U (zh) | 2023-02-20 | 2023-02-20 | 承载装置以及mocvd设备 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN219137004U (zh) |
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2023
- 2023-02-20 CN CN202320253130.0U patent/CN219137004U/zh active Active
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Legal Events
Date | Code | Title | Description |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240620 Address after: 201203 zone B, building 3, No. 168, Huatuo Road, Zhangjiang High Tech Park, Pudong New Area, Shanghai Patentee after: TANG OPTOELECTRONICS EQUIPMENT CO.,LTD. Country or region after: China Patentee after: Zhongsheng Semiconductor (Shanghai) Co.,Ltd. Address before: 201203 zone B, building 3, No. 168, Huatuo Road, Zhangjiang High Tech Park, Pudong New Area, Shanghai Patentee before: TANG OPTOELECTRONICS EQUIPMENT CO.,LTD. Country or region before: China |