CN219106136U - Mosfet semiconductor device - Google Patents
Mosfet semiconductor device Download PDFInfo
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- CN219106136U CN219106136U CN202223330669.6U CN202223330669U CN219106136U CN 219106136 U CN219106136 U CN 219106136U CN 202223330669 U CN202223330669 U CN 202223330669U CN 219106136 U CN219106136 U CN 219106136U
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- heat dissipation
- mosfet semiconductor
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- semiconductor device
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Abstract
The utility model provides a Mosfet semiconductor device, which comprises a mounting bottom plate and a heat dissipation mechanism. This Mosfet semiconductor device, through the radiating block in the cooling mechanism, connect the lug, the screw, the trompil, motor housing, a motor, the pivot, the flabellum, connect the trompil, set screw, louvre and filter screen's setting, the connecting lug that the radiating block was offered through both sides passes through screw and mounting plate fixed connection, install the Mosfet semiconductor between radiating block and the mounting plate, be the draw-in groove connection between Mosfet semiconductor and the radiating block, the Mosfet semiconductor gives off heat conduction to in the radiating block, the radiating block gives off heat and forms first heat dissipation through the fin, the connecting trompil has been offered to the inside both sides of radiating block, motor housing passes through set screw and radiating block stable link, then pivot and flabellum rotate under the operation drive of motor, further dispel the heat to the radiating block, thereby reach the inside heat of Mosfet semiconductor and in time get rid of, the radiating effect is good, increase in service life's effect.
Description
Technical Field
The utility model relates to the technical field of Mosfet semiconductors, in particular to a Mosfet semiconductor device.
Background
The MOSFET semiconductor device is also called a MOSFET, which is widely used in analog circuits and digital circuits, and can be classified into two types of "N-type" and "P-type" according to the polarity of the "channel" (working carrier), and is commonly called an NMOSFET and a PMOSFET.
However, the existing MOSFET semiconductor device generates heat to raise the temperature of its operating environment when in use, and is mainly cooled by the device housing and placed in a relatively closed environment, so that the cooling effect is poor, the efficiency is low, and the service life is reduced.
Disclosure of Invention
The utility model aims to provide a Mosfet semiconductor device, which solves the problems that the prior MOSFET semiconductor device provided in the background art can generate heat to raise the working environment temperature, is mainly used for radiating through a device shell and is placed in a closed environment, so that the radiating effect is poor, the efficiency is low and the service life is reduced.
In order to achieve the above purpose, the present utility model provides the following technical solutions: the utility model provides a Mosfet semiconductor device, includes mounting plate and heat dissipation mechanism, and heat dissipation mechanism includes radiating block, connection lug, screw, trompil, motor housing, motor, pivot, flabellum, connection trompil, set screw, louvre and filter screen, the mounting plate top is equipped with the Mosfet semiconductor, mosfet semiconductor top one side is provided with PIN instruction point, mosfet semiconductor top is provided with heat dissipation mechanism.
Preferably, the cooling mechanism comprises a cooling block, a connecting lug, a screw, an opening, a motor housing, a motor, a rotating shaft, fan blades, connecting openings, fixing screws, cooling holes and a filter screen, wherein the cooling block is arranged at the top of a Mosfet semiconductor, the connecting lug is arranged at the outer side of the cooling block, the screw is arranged inside the connecting lug, the opening is arranged on the outer side surface of the screw, the motor housing is arranged at the top of the cooling block, the motor housing is arranged inside the motor, the rotating shaft is arranged inside the motor, the fan blades are arranged at one end of the rotating shaft, the connecting openings are formed in two sides of the inner side of the cooling block, the fixing screws are arranged inside the connecting openings, the cooling holes are formed in the top of the motor housing, and the filter screen is arranged inside the cooling holes.
Preferably, the Mosfet semiconductor is connected with the heat dissipation block through a clamping groove, and the Mosfet semiconductor is tightly attached to the heat dissipation block.
Preferably, the screws are connected with the mounting bottom plate through the connecting lugs in a screw mode, and the screws are in one-to-one correspondence with the connecting lugs.
Preferably, the rotating shaft is connected with the fan blade through a clamping groove, and the rotating shaft is tightly attached to the fan blade.
Preferably, the fixing screw is in threaded connection with the connecting hole, and the outer diameter of the fixing screw is matched with the inner diameter of the connecting hole in size.
Preferably, the heat dissipation holes are connected with the filter screen through clamping grooves, and the heat dissipation holes are tightly attached to the filter screen.
Compared with the prior art, the utility model has the beneficial effects that: this Mosfet semiconductor device, when giving off heat in the use, through the radiating block in the cooling mechanism, connect the lug, the screw, the trompil, motor housing, a motor, the pivot, the flabellum, connect the trompil, set screw, the setting of louvre and filter screen, the connecting lug that the radiating block was offered through both sides passes through screw and mounting plate fixed connection, install the Mosfet semiconductor between radiating block and the mounting plate, be the draw-in groove connection between Mosfet semiconductor and the radiating block, the Mosfet semiconductor gives off heat conduction to in the radiating block, the radiating block gives off heat through the fin and forms first heat dissipation, the connecting trompil has been offered to the inside both sides of radiating block, motor housing passes through set screw and radiating block stable link, then pivot and flabellum rotate under the operation drive of motor, further dispel the heat to the radiating block, thereby reach the inside heat of Mosfet semiconductor and in time get rid of, the radiating effect is good, improve radiating efficiency, increase life's effect.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a Mosfet semiconductor device according to the present utility model;
FIG. 2 is a schematic diagram of a Mosfet semiconductor structure according to the present utility model;
FIG. 3 is a schematic diagram of a heat dissipating block according to the present utility model;
fig. 4 is a schematic view of a partial cross-sectional structure of a heat dissipation mechanism according to the present utility model.
Reference numerals in the drawings: 1. a mounting base plate; 2. a Mosfet semiconductor; 3. PIN1 indicates the point; 4. a heat dissipation mechanism; 401. a heat dissipation block; 402. a connecting lug; 403. a screw; 404. opening holes; 405. a motor housing; 406. a motor; 407. a rotating shaft; 408. a fan blade; 409. a connection opening; 410. a fixing screw; 411. a heat radiation hole; 412. and (5) a filter screen.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Referring to fig. 1-4, the present utility model provides a technical solution: the utility model provides a Mosfet semiconductor device, including mounting plate 1 and cooling mechanism 4, cooling mechanism 4 includes radiating block 401, connection lug 402, screw 403, trompil 404, motor housing 405, motor 406, pivot 407, flabellum 408, connection trompil 409, set screw 410, louvre 411 and filter screen 412, mounting plate 1 top is equipped with Mosfet semiconductor 2, one side of Mosfet semiconductor 2 top is provided with PIN1 indicator 3, mosfet semiconductor 2 top is provided with cooling mechanism 4.
Further, the heat dissipation mechanism 4 comprises a heat dissipation block 401, a connection lug 402, a screw 403, an opening 404, a motor housing 405, a motor 406, a rotating shaft 407, a fan blade 408, a connection opening 409, a fixing screw 410, a heat dissipation hole 411 and a filter screen 412, wherein the heat dissipation block 401 is arranged at the top of the Mosfet semiconductor 2, the connection lug 402 is arranged at the outer side of the heat dissipation block 401, the screw 403 is arranged in the connection lug 402, the opening 404 is arranged on the outer side surface of the screw 403, the motor housing 405 is arranged at the top of the heat dissipation block 401, the motor 406 is arranged in the motor housing 405, the rotating shaft 407 is arranged in the motor 406, the fan blade 408 is arranged at one end of the rotating shaft 407, the two sides of the inner part of the heat dissipation block 401 are provided with the connection opening 409, the fixing screw 410 is arranged in the connection opening 409, the heat dissipation hole 411 is arranged at the top of the motor housing 405, the filter screen 412 is arranged in the inner part of the heat dissipation hole 411, through the arrangement of the heat dissipation block 401, the connecting lugs 402, the screws 403, the openings 404, the motor housing 405, the motor 406, the rotating shaft 407, the fan blades 408, the connecting openings 409, the fixing screws 410, the heat dissipation holes 411 and the filter screen 412 in the heat dissipation mechanism 4, the heat dissipation block 401 is fixedly connected with the mounting base plate 1 through the connecting lugs 402 arranged at two sides through the screws 403, the Mosfet semiconductor 2 is arranged between the heat dissipation block 401 and the mounting base plate 1, the Mosfet semiconductor 2 is connected with the heat dissipation block 401 through clamping grooves, the heat dissipation of the Mosfet semiconductor 2 is conducted into the heat dissipation block 401, the heat dissipation block 401 dissipates the heat through the heat dissipation fins to form the first heat dissipation, the connecting openings 409 are arranged at two sides of the inside of the heat dissipation block 401, the motor housing 405 is stably connected with the heat dissipation block 401 through the fixing screws 410, then the rotating shaft 407 and the fan blades 408 are driven to rotate by the operation of the motor 406, the heat dissipation block 401 is further dissipated, and accordingly the heat inside the Mosfet semiconductor 2 is timely removed, the heat dissipation effect is good, the heat dissipation efficiency is improved, and the service life is prolonged.
Further, be the draw-in groove and be connected between Mosfet semiconductor 2 and the radiating block 401, mosfet semiconductor 2 closely laminates with the radiating block 401, through such setting, the installation or the dismantlement of staff of being convenient for, easy operation.
Further, the screws 403 are connected with the mounting base plate 1 through the connecting lugs 402 by screws, the screws 403 are in one-to-one correspondence with the connecting lugs 402, and by the arrangement, the heat dissipation mechanism 4 is firmly fixed on the mounting base plate 1, and the connection is stable.
Further, be the draw-in groove and be connected between pivot 407 and the flabellum 408, pivot 407 and the inseparable laminating of flabellum 408 through such setting, can make things convenient for operating personnel to change the maintenance to flabellum 408, easy operation.
Further, the fixing screw 410 is in threaded connection with the connecting hole 409, and the outer diameter of the fixing screw 410 is matched with the inner diameter of the connecting hole 409, so that the motor housing 405 can be firmly fixed on the top of the heat dissipation block 401 through the arrangement, and the installation and the disassembly are convenient.
Further, be the draw-in groove and be connected between louvre 411 and the filter screen 412, louvre 411 and filter screen 412 closely laminate, through such setting, can avoid external dust etc. to get into inside when radiating and lead to the part to damage, increase of service life.
Working principle: when the Mosfet semiconductor device is used, firstly, the heat dissipation block 401, the connecting lugs 402, the screws 403, the openings 404, the motor housing 405, the motor 406, the rotating shaft 407, the fan blades 408, the connecting openings 409, the fixing screws 410, the heat dissipation holes 411 and the filter screen 412 are arranged in the heat dissipation mechanism 4, the heat dissipation block 401 is fixedly connected with the mounting base plate 1 through the screws 403 by the connecting lugs 402 arranged on two sides, secondly, the Mosfet semiconductor 2 is arranged between the heat dissipation block 401 and the mounting base plate 1, the Mosfet semiconductor 2 is connected with the heat dissipation block 401 through clamping grooves, the heat dissipation of the Mosfet semiconductor 2 is conducted into the heat dissipation block 401, the heat dissipation block 401 dissipates heat through the heat dissipation fins to form first heat dissipation, the third step of radiating block 401 inside both sides have been seted up and have been connected trompil 409, motor housing 405 passes through set screw 410 and radiating block 401 stable link, fourth step pivot 407 and flabellum 408 are rotatory under the operation drive of motor 406, further dispel the heat to radiating block 401, thereby make the inside heat of Mosfet semiconductor 2 in time get rid of, the radiating effect is good, improve radiating efficiency, the fifth step passes through the setting of louvre 411 and filter screen 412, can be when radiating, avoid external dust and other magazines to get into inside and lead to the part damage, increase life, through setting up of PIN1 instruction point 3, can clearly distinguish each foot utmost point, the use of a Mosfet semiconductor device has been accomplished like this.
Although embodiments of the present utility model have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. The utility model provides a Mosfet semiconductor device, includes mounting plate (1) and cooling mechanism (4), and cooling mechanism (4) are including radiating block (401), connection lug (402), screw (403), trompil (404), motor housing (405), motor (406), pivot (407), flabellum (408), connection trompil (409), set screw (410), louvre (411) and filter screen (412), its characterized in that: the mounting baseplate (1) top is equipped with Mosfet semiconductor (2), one side of Mosfet semiconductor (2) top is provided with PIN1 instruction point (3), mosfet semiconductor (2) top is provided with heat dissipation mechanism (4).
2. A Mosfet semiconductor device according to claim 1, wherein, the heat dissipation mechanism (4) comprises a heat dissipation block (401), a connecting lug (402), a screw (403), an opening (404), a motor housing (405), a motor (406), a rotating shaft (407), a fan blade (408), a connecting opening (409), a fixing screw (410), a heat dissipation hole (411) and a filter screen (412), a heat dissipation block (401) is arranged at the top of the Mosfet semiconductor (2), a connecting lug (402) is arranged on the outer side of the heat dissipation block (401), a screw (403) is arranged in the connecting lug (402), an opening (404) is arranged on the outer side surface of the screw (403), a motor housing (405) is arranged at the top of the heat dissipation block (401), a motor (406) is arranged in the motor shell (405), a rotating shaft (407) is arranged in the motor (406), one end of the rotating shaft (407) is provided with a fan blade (408), two sides of the inner part of the heat dissipation block (401) are provided with connecting holes (409), a fixing screw (410) is arranged in the connecting hole (409), the motor is characterized in that a heat dissipation hole (411) is formed in the top of the motor shell (405), and a filter screen (412) is arranged in the heat dissipation hole (411).
3. The Mosfet semiconductor device according to claim 2, wherein the Mosfet semiconductor (2) is connected to the heat sink (401) by a clamping groove, and the Mosfet semiconductor (2) is tightly attached to the heat sink (401).
4. The Mosfet semiconductor device according to claim 2, wherein the screws (403) are screwed to the mounting substrate (1) by means of connection lugs (402), and the screws (403) are in one-to-one correspondence with the connection lugs (402).
5. The Mosfet semiconductor device according to claim 2, wherein the rotating shaft (407) is connected to the fan blade (408) by a clamping groove, and the rotating shaft (407) is tightly attached to the fan blade (408).
6. The Mosfet semiconductor device according to claim 2, wherein the fixing screw (410) is in threaded connection with the connecting opening (409), and an outer diameter of the fixing screw (410) is matched with an inner diameter of the connecting opening (409).
7. The Mosfet semiconductor device according to claim 2, wherein the heat dissipation holes (411) are connected to the filter screen (412) by a clamping groove, and the heat dissipation holes (411) are tightly attached to the filter screen (412).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202223330669.6U CN219106136U (en) | 2022-12-13 | 2022-12-13 | Mosfet semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202223330669.6U CN219106136U (en) | 2022-12-13 | 2022-12-13 | Mosfet semiconductor device |
Publications (1)
Publication Number | Publication Date |
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CN219106136U true CN219106136U (en) | 2023-05-30 |
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CN202223330669.6U Active CN219106136U (en) | 2022-12-13 | 2022-12-13 | Mosfet semiconductor device |
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CN (1) | CN219106136U (en) |
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2022
- 2022-12-13 CN CN202223330669.6U patent/CN219106136U/en active Active
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