CN219099382U - Single crystal furnace - Google Patents
Single crystal furnace Download PDFInfo
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- CN219099382U CN219099382U CN202222622695.XU CN202222622695U CN219099382U CN 219099382 U CN219099382 U CN 219099382U CN 202222622695 U CN202222622695 U CN 202222622695U CN 219099382 U CN219099382 U CN 219099382U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model provides a single crystal furnace. The single crystal furnace comprises a crucible, a heat exchanger and a temperature measuring module; the top of the crucible and the bottom of the heat exchanger are arranged at intervals, and the silicon liquid is stored in the crucible; the temperature measurement module comprises a temperature measurement probe, one end of the temperature measurement probe is connected with the bottom of the heat exchanger, and the other end of the temperature measurement probe is contacted with the liquid level of the silicon liquid under the condition that the heat exchanger moves towards the crucible. Therefore, when the accurate measurement of the temperature of the liquid level of the silicon liquid is realized, the measurement error is reduced, a certain gap exists between the liquid level of the silicon liquid and the bottom of the heat exchanger, the heat exchanger is prevented from being immersed in the silicon liquid, and the normal operation of the crystal pulling process is further ensured.
Description
Technical Field
The utility model relates to the technical field of photovoltaic production, in particular to a single crystal furnace.
Background
In the process of pulling in the photovoltaic manufacturing industry, particularly in the process of pulling a crystal bar by a Czochralski method, the liquid level temperature of silicon liquid in a single crystal furnace, the liquid level of the silicon liquid and the distance between the bottom surfaces of a heat exchanger are of great significance for the normal operation of crystal pulling production.
Currently, when measuring the liquid level temperature of silicon liquid in a single crystal furnace, non-contact measurement is generally adopted, and then the liquid level of the silicon liquid and the bottom surface distance of a heat exchanger are judged by reflection in the liquid level of the silicon industry through the heat exchanger.
However, because the non-contact measurement has certain deviation, the accuracy of measuring the liquid level temperature of the silicon liquid in the single crystal furnace is reduced, and in the process of judging the distance between the liquid level of the silicon liquid and the bottom surface of the heat exchanger, the risk that the heat exchanger is immersed into the liquid level exists by manually adjusting the position of the heat exchanger, so that the normal operation of the crystal pulling process is affected.
Disclosure of Invention
In order to solve or partially solve the problems, the utility model discloses a single crystal furnace, which aims to solve the problem of inaccurate measurement of the liquid level temperature of silicon liquid in the single crystal furnace in the prior art.
The utility model discloses a single crystal furnace, which comprises a crucible, a heat exchanger and a temperature measuring module;
the top of the crucible and the bottom of the heat exchanger are arranged at intervals, and the silicon liquid is stored in the crucible;
the temperature measurement module comprises a temperature measurement probe, one end of the temperature measurement probe is connected with the bottom of the heat exchanger, and the other end of the temperature measurement probe is contacted with the liquid surface of the silicon liquid under the condition that the heat exchanger moves towards the crucible.
Optionally, the temperature measuring module further comprises a wire, and the heat exchanger comprises a water channel;
the water channel is communicated with the bottom of the heat exchanger from the top of the heat exchanger, and the lead penetrates through the water channel and is connected with the temperature measuring probe.
Optionally, the temperature measurement module further comprises a controller;
the controller is electrically connected with the temperature measuring probe through the lead, wherein the controller is used for converting an electric signal transmitted by the temperature measuring probe into temperature information.
Optionally, the temperature measurement module further comprises a display;
the display is electrically connected with the controller and is used for displaying the temperature information converted by the controller.
Optionally, the number of the temperature measuring probes included in the single crystal furnace is greater than or equal to two.
Optionally, a plurality of temperature measurement probes are circumferentially distributed at the bottom of the heat exchanger.
Optionally, one end of the temperature measuring probe, which is contacted with the liquid level of the silicon liquid, is conical.
Optionally, the temperature measuring probe comprises an alloy thermocouple and a high-temperature resistant protective sleeve;
the high-temperature resistant protective sleeve wraps the outer portion of the temperature measuring probe, and the high-temperature resistant protective sleeve is welded with the bottom of the heat exchanger.
Optionally, the length of the temperature measuring probe is greater than or equal to the minimum distance between the bottom of the heat exchanger and the liquid level of the silicon liquid.
Optionally, the single crystal furnace further comprises a heat shield and a heat preservation module;
the heat shield wraps one end of the heat exchanger, which is close to the heat exchanger, and the heat preservation module is arranged on one side, away from the heat exchanger, of the heat shield.
Compared with the prior art, the embodiment of the utility model has the following advantages:
according to the embodiment of the utility model, as the top of the crucible and the bottom of the heat exchanger are arranged at intervals, the silicon liquid is stored in the crucible, and the temperature measuring module comprises the temperature measuring probe, one end of the temperature measuring probe is connected with the bottom of the heat exchanger, so that the other end of the temperature measuring probe can be contacted with the liquid surface of the silicon liquid under the condition that the heat exchanger moves towards the direction close to the crucible, and the temperature of the liquid surface of the silicon liquid can be directly measured through the temperature measuring probe. Therefore, when the accurate measurement of the temperature of the liquid level of the silicon liquid is realized, the measurement error is reduced, a certain gap exists between the liquid level of the silicon liquid and the bottom of the heat exchanger, the heat exchanger is prevented from being immersed in the silicon liquid, and the normal operation of the crystal pulling process is further ensured.
Drawings
FIG. 1 is a schematic diagram of a single crystal furnace according to an embodiment of the present utility model;
FIG. 2 is a schematic distribution diagram of a heat exchanger and a schematic temperature measurement module according to an embodiment of the present utility model;
fig. 3 is a schematic view of a partial structure of a single crystal furnace according to an embodiment of the present utility model.
Reference numerals illustrate:
1-a crucible; 2-a heat exchanger; 3-a temperature measurement module; 4-heat shield; 5-a heat preservation module; 21-a waterway; 31-a temperature measurement probe; 32-wires.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
It should be appreciated that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present utility model. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a single crystal furnace according to an embodiment of the present utility model, and as shown in fig. 1, the single crystal furnace includes a crucible 1, a heat exchanger 2, and a temperature measuring module 3.
The top of the crucible 1 and the bottom of the heat exchanger 2 are arranged at intervals, and silicon liquid is stored in the crucible 1; the temperature measurement module 3 comprises a temperature measurement probe 31, one end of the temperature measurement probe 31 is connected with the bottom of the heat exchanger 2, and the other end of the temperature measurement probe 31 is contacted with the liquid surface of the silicon liquid under the condition that the heat exchanger 2 moves towards the crucible 1.
The single crystal furnace is an apparatus for growing a dislocation-free single crystal by a Czochralski method in an atmosphere of an inert gas such as nitrogen, helium, or argon, in which a polycrystalline material such as polycrystalline silicon is melted by a graphite heat exchanger. Wherein the crucible 1 is used for storing a silicon liquid. The crucible 1 is typically of a cup-type structure with an open top such that the level of the silicon liquid is near the top of the crucible 1 or is level with the top of the crucible 1.
The heat exchanger 2 is arranged above the top of the crucible 1 and is arranged at intervals with the crucible 1. The heat exchanger 2 may be an intermediate heat exchanger independently arranged on the heat shield, or may be a composite water-cooled heat exchanger, or other heat exchangers, which is not limited in the embodiment of the present utility model. Taking the heat exchanger arranged in the middle of the heat shield as an example, the heat exchanger 2 generally comprises an inner shell and an outer shell, wherein a water channel 21 is arranged in the inner shell and the outer shell, and a heat exchange cavity is arranged between the outer shell and the inner shell, so that water is added into the heat exchange cavity through the water channel 21, the water after heat exchange flows outwards from the water channel 21, and heat is brought out through the flow of water flow in the water channel 21.
In the process of crystal pulling production, the temperature of the liquid level of the silicon liquid and the distance between the bottom of the heat exchanger 2 and the liquid level of the silicon liquid need to be accurately measured, so that the normal operation of the crystal pulling process is ensured.
In the embodiment of the utility model, in order to accurately measure the temperature of the liquid level of the silicon liquid, the temperature measuring module 3 comprises a temperature measuring probe 31, one end of the temperature measuring probe 31 is connected with the bottom of the heat exchanger 2, and the other end of the temperature measuring probe 31 is contacted with the liquid level of the silicon liquid. In this way, the temperature of the liquid surface of the silicon liquid can be directly measured by the temperature measuring probe 31, and the deviation of measurement can be reduced.
As can be seen from the above embodiment, in the embodiment of the present utility model, since the top of the crucible 1 and the bottom of the heat exchanger 2 are disposed at intervals, the silicon liquid is stored in the crucible 1, and the temperature measuring module 3 includes the temperature measuring probe 31, one end of the temperature measuring probe 31 is connected to the bottom of the heat exchanger 2, so that the other end of the temperature measuring probe 31 can be contacted with the liquid surface of the silicon liquid when the heat exchanger 2 moves in the direction approaching to the crucible 1, and the temperature of the liquid surface of the silicon liquid can be directly measured through the temperature measuring probe 31. Therefore, when the accurate measurement of the temperature of the liquid level of the silicon liquid is realized and the measurement error is reduced, a certain gap exists between the liquid level of the silicon liquid and the bottom of the heat exchanger 2, the heat exchanger 2 is prevented from being immersed in the silicon liquid, and the normal operation of the crystal pulling process is further ensured.
In some embodiments, as shown in fig. 2 and 3, the temperature measurement module 3 further includes a wire 32, the heat exchanger 2 includes a water channel 21, the water channel 21 communicates with the bottom of the heat exchanger 2 from the top of the heat exchanger 2, and the wire 32 is connected to the temperature measurement probe 31 through the water channel 21. In this embodiment, the water channel 21 penetrates from the top of the heat exchanger 2 to the bottom of the heat exchanger 2, and the wire penetrates through the water channel to be connected with the temperature measuring probe. Of course, the connection part of the wire and the temperature measuring probe can be positioned in the water channel, and the other part is positioned between the heat exchanger and the heat shield.
It should be noted that the water channel 21 may include a water inlet pipe and a water outlet pipe, so that water is added into the heat exchange cavity in the heat exchanger 2 through the water inlet pipe, and the water after heat exchange flows out from the water outlet pipe, and the heat is carried out through the flow of the water flow in the water channel 21. The wires 32 may be disposed in the water outlet pipe, the water inlet pipe, or both the water inlet pipe and the water outlet pipe, which is not limited by the embodiment of the present utility model. Is connected to the temperature probe 31 via a wire 32, so that data measured by the measurement probe can be transmitted via the wire 32.
It should be further noted that, the wire 32 may include a waterproof adhesive layer and a metal wire, and the waterproof wire may be wrapped around the metal wire, so as to avoid corroding the wire 32 or causing a short circuit of the wire 32 after the wire 32 is disposed in the water channel 21. In addition, in the case where the waterway 21 has a corner or a curve, a duct may be provided in the waterway 21, the duct may be fixed to the inner wall of the waterway 21, and then the wire 32 may be passed through the duct, so that the effect of protecting the wire 32 and the limit effect of the wire 32 may be achieved through the duct.
Optionally, the temperature measurement module 3 further includes a controller, and the controller is electrically connected to the temperature measurement probe 31 through a wire 32, where the controller is configured to convert an electrical signal transmitted by the temperature measurement probe 31 into temperature information.
It should be noted that the controller may include a detection module, a data transmission module and a control module, where the detection module and the data transmission module are respectively electrically connected to the control module, and the detection module is used to detect a temperature change of the temperature measurement probe 31 electrically connected to the wire 32. The data transmitting module is used for acquiring the temperature information detected by the detecting module and transmitting the temperature information to the control module.
Further, the temperature measuring module 3 further comprises a display; the display is electrically connected with the controller and is used for displaying temperature information converted by the controller. In this way, through the electrical connection between the display and the controller, the display can display the detected temperature information of the temperature measuring probe 31, so that the operator can observe and adjust in real time conveniently.
In some embodiments, the single crystal furnace includes a number of temperature probes 31 greater than or equal to two.
It should be noted that the number of the temperature measuring probes 31 may be any of two, three, four, etc., which is not limited in the embodiment of the present utility model. In this way, since the single crystal furnace includes the number of temperature probes 31 that is greater than or equal to two, the temperature of the liquid surface of the silicon liquid can be measured by at least two temperature probes 31, and then the error in the measurement of the temperature probes 31 can be reduced by taking the average value of the temperatures measured by at least two temperature probes 31.
Further, a plurality of temperature measuring probes 31 are circumferentially distributed at the bottom of the heat exchanger 2.
It should be noted that, when the plurality of temperature measurement probes 31 are circumferentially distributed at the bottom of the heat exchanger 2, the temperature measurement probes 31 that contact the liquid surface of the silicon liquid can be distributed along the circumference of the bottom of the heat exchanger 2, that is, the distribution of the temperature measurement probes 31 that contact the liquid surface of the silicon liquid is more uniform, so that the temperature of the silicon liquid measured by the plurality of temperature measurement probes 31 is more accurate. It should be further noted that the plurality of temperature measurement probes 31 may be distributed in an array, such as a symmetrical array, a triangular array, a rectangular array, or an array with other shapes, which is not limited in the embodiment of the present utility model.
It should be noted that, since the plurality of temperature probes 31 are uniformly distributed at the bottom of the heat exchanger 2, there is necessarily a case where the temperature probes 31 and the water channel 21 are not in the same direction. Based on this, a wire 32 fixing member may be disposed at the bottom of the heat exchanger 2, so that the wire 32 may be electrically connected to the temperature measuring probe 31 at a predetermined position through the wire fixing member after passing through the water channel 21, that is, a wiring manner in which a portion of the wire 32 led out from the water channel 21 and a portion of the wire 32 located at the bottom of the heat exchanger 2 are vertically distributed may be satisfied.
The end of the temperature probe 31 that contacts the surface of the silicon liquid is tapered. In this way, the end of the temperature probe 31, which is in contact with the liquid surface of the silicon liquid, is in point contact, which is more beneficial to the temperature probe 31 to detect the liquid surface of the silicon liquid. Compared with one end of the temperature probe 31 contacted with the liquid level of the silicon liquid, the fixing area of one end of the temperature probe 31 fixed at the bottom of the heat exchanger 2 is larger, which is more beneficial to increasing the stability of the connection between the temperature probe 31 and the bottom of the heat exchanger 2.
In some embodiments, the temperature probe 31 includes an alloy thermocouple and a high temperature resistant protective sheath; the high temperature resistant protective sleeve wraps the outside of the temperature measuring probe, and the high temperature resistant protective sleeve is welded with the bottom of the heat exchanger 2.
The alloy couple can be any thermocouple such as a nickel-chromium alloy couple, a magnesium alloy couple, a platinum-rhodium alloy couple and the like, and the alloy couple can measure temperature according to a thermoelectric effect. Thus, the alloy galvanic couple can be protected from corrosion of the silicon liquid by wrapping the high temperature resistant protective sleeve outside the temperature measuring probe, thereby prolonging the service life of the temperature measuring probe 31. In addition, through the welding of the high temperature resistant protective sleeve and the bottom of the heat exchanger 2, the problem that the alloy galvanic couple cannot be welded can be solved, and the structure of the alloy galvanic couple can be protected from being damaged.
In some embodiments, the length of the temperature probe 31 is greater than or equal to the minimum distance between the bottom of the heat exchanger 2 and the level of the silicon liquid. In this way, the contact between the end of the temperature probe 31 and the liquid surface of the silicon liquid can be ensured, and a certain gap between the liquid surface of the silicon liquid and the bottom of the heat exchanger 2 can be ensured, so that the heat exchanger 2 is prevented from being immersed in the silicon liquid.
It should be noted that the single crystal furnace also includes a heat shield 4 and a heat preservation module 5; the heat shield 4 wraps one end of the heat exchanger 2, which is close to the heat exchanger, and the heat preservation module 5 is arranged on one side, away from the heat exchanger 2, of the heat shield 4.
As can be seen from the above embodiment, in the embodiment of the present utility model, since the top of the crucible 1 and the bottom of the heat exchanger 2 are disposed at intervals, the silicon liquid is stored in the crucible 1, and the liquid surface of the silicon liquid is close to or flush with the top of the crucible 1, the temperature measurement module 3 includes the temperature measurement probe 31, and one end of the temperature measurement probe 31 is connected with the bottom of the heat exchanger 2, so that the other end of the temperature measurement probe 31 contacts with the liquid surface of the silicon liquid when the heat exchanger 2 moves in the direction close to the crucible 1, and the liquid surface temperature of the silicon liquid can be directly measured by the temperature measurement probe 31. Therefore, when the accurate measurement of the temperature of the liquid level of the silicon liquid is realized and the measurement error is reduced, a certain gap exists between the liquid level of the silicon liquid and the bottom of the heat exchanger 2, the heat exchanger 2 is prevented from being immersed in the silicon liquid, and the normal operation of the crystal pulling process is further ensured.
In the description, each embodiment is described in a progressive manner, and each embodiment is mainly described by the differences from other embodiments, so that identical and similar parts between the embodiments are all mutually referred.
While preferred embodiments of the present utility model have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the scope of the embodiments of the utility model.
Finally, it is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article or terminal device comprising the element.
The foregoing has outlined a detailed description of a single crystal furnace in accordance with the present utility model, wherein specific examples are provided herein to illustrate the principles and embodiments of the present utility model, and the above examples are provided to assist in understanding the method and core concepts of the present utility model; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present utility model, the present description should not be construed as limiting the present utility model in view of the above.
Claims (10)
1. The single crystal furnace is characterized by comprising a crucible, a heat exchanger and a temperature measuring module;
the top of the crucible and the bottom of the heat exchanger are arranged at intervals, and silicon liquid is stored in the crucible;
the temperature measurement module comprises a temperature measurement probe, one end of the temperature measurement probe is connected with the bottom of the heat exchanger, and the other end of the temperature measurement probe is contacted with the liquid surface of the silicon liquid under the condition that the heat exchanger moves towards the crucible.
2. The single crystal growing furnace of claim 1 wherein the temperature measurement module further comprises a wire and the heat exchanger comprises a water channel;
the water channel is communicated with the bottom of the heat exchanger from the top of the heat exchanger, and the lead penetrates through the water channel and is connected with the temperature measuring probe.
3. The single crystal growing furnace of claim 2 wherein the temperature measurement module further comprises a controller;
the controller is electrically connected with the temperature measuring probe through the lead, wherein the controller is used for converting an electric signal transmitted by the temperature measuring probe into temperature information.
4. The single crystal growing furnace of claim 3 wherein the temperature measurement module further comprises a display;
the display is electrically connected with the controller and is used for displaying the temperature information converted by the controller.
5. The single crystal growing furnace of claim 1 wherein the single crystal growing furnace includes a number of temperature probes greater than or equal to two.
6. The single crystal furnace of claim 5, wherein a plurality of the temperature probes are circumferentially distributed at the bottom of the heat exchanger.
7. The single crystal growing furnace of claim 1 wherein the end of the temperature probe contacting the surface of the silicon liquid is tapered.
8. The single crystal furnace of claim 1, wherein the temperature probe comprises an alloy thermocouple and a high temperature resistant protective sleeve;
the high-temperature resistant protective sleeve wraps the outer portion of the temperature measuring probe, and the high-temperature resistant protective sleeve is welded with the bottom of the heat exchanger.
9. The single crystal growing furnace of claim 1 wherein the length of the temperature probe is greater than or equal to the minimum distance between the bottom of the heat exchanger and the liquid level of the silicon liquid.
10. The single crystal growing furnace of claim 1, further comprising a heat shield and a thermal module;
the heat shield wraps one end of the heat exchanger, which is close to the heat exchanger, and the heat preservation module is arranged on one side, away from the heat exchanger, of the heat shield.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222622695.XU CN219099382U (en) | 2022-09-30 | 2022-09-30 | Single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222622695.XU CN219099382U (en) | 2022-09-30 | 2022-09-30 | Single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219099382U true CN219099382U (en) | 2023-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222622695.XU Active CN219099382U (en) | 2022-09-30 | 2022-09-30 | Single crystal furnace |
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| CN (1) | CN219099382U (en) |
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2022
- 2022-09-30 CN CN202222622695.XU patent/CN219099382U/en active Active
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