CN219041754U - Bulk acoustic wave resonator, packaging assembly comprising same and electronic equipment - Google Patents
Bulk acoustic wave resonator, packaging assembly comprising same and electronic equipment Download PDFInfo
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- CN219041754U CN219041754U CN202223279964.3U CN202223279964U CN219041754U CN 219041754 U CN219041754 U CN 219041754U CN 202223279964 U CN202223279964 U CN 202223279964U CN 219041754 U CN219041754 U CN 219041754U
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Abstract
The utility model provides a bulk acoustic wave resonator, a packaging assembly and electronic equipment comprising the same, wherein the bulk acoustic wave resonator comprises: the device comprises a substrate, a resonance structure, an acoustic wave reflecting structure, an integrated capacitor and at least two bonding pads, wherein the resonance structure comprises an upper electrode, a piezoelectric layer and a lower electrode; the sound wave reflecting structure is formed in or on the substrate; the overlapping area between the acoustic wave reflecting structure and the resonance structure is the resonance area of the bulk acoustic wave resonator; the bonding pad is formed on the substrate, and the area where the bonding pad is positioned is a bonding area; the region between the resonance region and the bonding region is a non-resonance region of the bulk acoustic wave resonator; the integrated capacitor comprises an upper polar plate, a dielectric layer and a lower polar plate, and is formed in a non-resonant area and/or a bonding area of the bulk acoustic wave resonator; at least a portion of at least one bond pad acts as an upper plate or a lower plate of the integrated capacitor. By adopting the scheme, the miniaturization of the device can be realized.
Description
Technical Field
The present utility model relates to an electronic device, and more particularly, to a package assembly including a bulk acoustic wave resonator and an electronic device including the same.
Background
Portable communication devices, such as cell phones, notebooks, personal digital assistants, global positioning systems, and beidou, etc., need to communicate through various communication networks. Portable communication devices typically include a radio frequency front end module for which a filter is the primary component. With the rapid development of communication technology, the filter is continuously evolving towards miniaturization and multi-band, and meanwhile, the requirements on the aspects of insertion loss, out-of-band suppression, roll-off, bandwidth and the like of the filter are also higher and higher. The bulk acoustic wave filter formed by the bulk acoustic wave resonator can well meet the requirement of radio frequency front-end filtering with smaller volume, lower insertion loss, good out-of-band rejection and superior roll-off characteristics, so that the bulk acoustic wave filter is widely applied.
The increase in bandwidth in the bulk acoustic wave filter needs to be achieved by employing a bulk acoustic wave resonator having a higher electromechanical coupling coefficient, however, the higher electromechanical coupling coefficient is more disadvantageous for the bulk acoustic wave filter to achieve superior roll-off characteristics. To solve the above technical contradiction, the roll-off characteristic of the bulk acoustic wave filter may be enhanced by reducing the electromechanical coupling coefficient of the bulk acoustic wave resonator by connecting a capacitor in series or in parallel to the bulk acoustic wave resonator.
In particular, the bulk acoustic wave resonator is implemented by using a discrete capacitor connected to the bulk acoustic wave resonator in the bulk acoustic wave filter chip. There is also a prior art technique in which another electrode layer is formed directly under a lower electrode of a bulk acoustic wave resonator, and a capacitor is integrated in a filter chip by forming an insulating medium between the lower electrode and the other electrode layer. However, in the existing method or because the capacitor is of a discrete structure, miniaturization of the bulk acoustic wave filter is not favored; or additional process steps are required to manufacture the capacitor, which increases the manufacturing cost.
Disclosure of Invention
To overcome the above-described drawbacks of the prior art, the present utility model provides a bulk acoustic wave resonator including an integrated capacitor.
The following presents a simplified summary of the utility model in order to provide a basic understanding of some aspects of the utility model. It should be understood that this summary is not an exhaustive overview of the utility model. It is not intended to identify key or critical elements of the utility model or to delineate the scope of the utility model. Its purpose is to present some concepts in a simplified form as a prelude to the more detailed description that is discussed later.
According to an aspect of the present utility model, there is provided a bulk acoustic wave resonator comprising: a substrate; a resonant structure including an upper electrode, a piezoelectric layer, and a lower electrode; an acoustic wave reflecting structure formed in or on the substrate; the overlapping area between the acoustic wave reflecting structure and the resonance structure is the resonance area of the bulk acoustic wave resonator; at least two bonding pads, wherein the bonding pads are formed on the substrate, and the area where the bonding pads are positioned is a bonding area; the area between the resonance area and the bonding area is a non-resonance area of the bulk acoustic wave resonator; an integrated capacitor comprising an upper plate, a dielectric layer and a lower plate, the integrated capacitor being formed in the non-resonant region and/or bonding region of the bulk acoustic wave resonator; at least a portion of at least one of the bond pads acts as an upper plate or a lower plate of the integrated capacitor.
Further, the upper electrode plate of the integrated capacitor and the upper electrode of the bulk acoustic wave resonator are arranged on the same layer and made of the same conductive material.
Further, an upper electrode plate of the integrated capacitor and an upper electrode of the bulk acoustic wave resonator are integrally arranged.
Further, the lower electrode plate of the integrated capacitor and the lower electrode of the bulk acoustic wave resonator are arranged on the same layer and made of the same conductive material.
Further, the lower electrode plate of the integrated capacitor is integrally arranged with the lower electrode of the bulk acoustic wave resonator.
Further, the dielectric layer of the integrated capacitor and the piezoelectric layer of the bulk acoustic wave resonator are arranged in the same layer and made of the same conductive material.
Further, the dielectric layer of the integrated capacitor is integrally arranged with the piezoelectric layer of the bulk acoustic wave resonator.
Further, the dielectric layer has a dielectric constant different from that of the piezoelectric layer.
According to another aspect of the utility model there is provided a packaging assembly comprising a bulk acoustic wave resonator as claimed in any preceding claim.
According to a further aspect of the utility model there is provided an electronic device comprising a package assembly as described above.
The bulk acoustic wave resonator comprising the integrated capacitor provided by the utility model utilizes the spare space of the bulk acoustic wave resonator to prepare the integrated capacitor, does not occupy the chip area of the filter additionally, and well conforms to the miniaturization trend of the filter; technical contradiction between electromechanical coupling coefficient and roll-off characteristic is avoided; the integrated capacitor is synchronously formed by utilizing the existing structure manufacturing procedures in the bulk acoustic wave resonator, the additional process steps are not added, and the manufacturing cost is saved.
Drawings
The above and other objects, features and advantages of the present utility model will be more readily appreciated by reference to the following detailed description of the utility model taken in conjunction with the accompanying drawings. The drawings are only for the purpose of illustrating the principles of the utility model. The dimensions and relative positioning of the elements in the figures are not necessarily drawn to scale.
FIGS. 1-2 show schematic structural views of one embodiment of a bulk acoustic wave resonator of the present utility model including an integrated capacitor;
FIG. 3 shows a schematic diagram of a package assembly of a bulk acoustic wave resonator including an integrated capacitor of the present utility model;
fig. 4-5 show schematic structural diagrams of comparative examples of bulk acoustic wave resonators including integrated capacitors of the present utility model.
Detailed Description
An exemplary disclosure of the present utility model will be described hereinafter with reference to the accompanying drawings. In the interest of clarity and conciseness, not all features of an implementation of the utility model are described in the specification. It will be appreciated, however, that in the development of any such actual implementation, numerous implementation-specific decisions may be made to achieve the developers' specific goals, and that these decisions may vary from one implementation to another.
In this case, in order to avoid obscuring the present utility model by unnecessary details, only the device structures closely related to the scheme according to the present utility model are shown in the drawings, and other details not greatly related to the present utility model are omitted.
It is to be understood that the utility model is not limited to the described embodiments, as a result of the following description with reference to the drawings. In the present utility model, features between different embodiments may be substituted or borrowed where possible, and one or more features may be omitted in one embodiment.
Referring to fig. 1-2, fig. 1-2 show schematic structural views of a bulk acoustic wave resonator including an integrated capacitor according to an embodiment of the present utility model, wherein like reference numerals refer to like components.
As shown in fig. 1-2, the bulk acoustic wave resonator includes a substrate 100, a resonant structure 200, an integrated capacitance 300, a bond pad 400, an acoustic wave reflecting structure 101 formed in or on the substrate 100, a lower electrode 201 formed on the substrate 100, a piezoelectric layer 202 formed on the lower electrode 201, an upper electrode 203 formed on the piezoelectric layer 202, and the bond pad 400 formed on the substrate 100.
Further, there is a partial overlap region between the acoustic wave reflecting structure 101, the lower electrode 201, the piezoelectric layer 202, and the upper electrode 203, which is defined as a resonance region of the bulk acoustic wave resonator, and the upper electrode 203, the piezoelectric layer 202, and the lower electrode 201 within the resonance region constitute the resonance structure 200 of the bulk acoustic wave resonator. The region where the bonding pad 400 is located is defined as a bonding region, and the region located between the resonance region and the bonding region is defined as a non-resonance region of the bulk acoustic wave resonator. As shown in fig. 1, the integrated capacitance 300 is located in the non-resonant region; or as shown in fig. 2, the integrated capacitor 300 is located in the non-resonant region and the bonding region.
The substrate 100 of the bulk acoustic wave resonator may be, for example, silicon, gallium arsenide, indium phosphide, glass, sapphire, aluminum oxide 、 SiC, and the like, is compatible with semiconductor processing. The substrate 100 serves primarily to support the functional layers of the bulk acoustic wave resonator.
By etching, an acoustic wave reflecting structure 101 is formed in the substrate 100, and the acoustic wave reflecting structure 101 may be formed of an air chamber. Alternatively, the acoustic wave reflecting structure 101 is formed directly on the substrate 100, and the acoustic wave reflecting structure 101 is constituted by a stack of films of different acoustic impedances filled in an air cavity with a thickness of, for example, 1/4 wavelength.
A lower electrode 201 of the bulk acoustic wave resonator covering the acoustic wave reflecting structure 101 is formed on the substrate 100 by a thin film deposition process. The lower electrode 201 may be a single layer or a plurality of layers. The lower electrode 201 may be formed of one or more conductive materials, such as various metals compatible with semiconductor processes including tungsten, molybdenum, iridium, aluminum, platinum, ruthenium, niobium, or hafnium. It should be understood by those skilled in the art that the shape of the lower electrode 201 may be arbitrary, and the shape of the lower electrode 201 is not further limited in the present utility model. By way of example, the projected profile of the lower electrode 201 on the surface of the substrate 100 may be an irregular pattern or a regular pattern, such as: regular polygons such as triangles, rectangles, pentagons, hexagons, octagons, and the like.
Further, in the manufacturing process of the lower electrode 201, the lower electrode conductive material layer for manufacturing the lower electrode 201 needs to remain in the non-resonance region and/or the bonding region in addition to the resonance region. The lower electrode conductive material layer extending from the non-resonant region to the bonding region may be provided in the same layer and separately from the lower electrode 201 in the resonant region as shown in fig. 1, and the lower electrode conductive material layer extending from the non-resonant region to the bonding region may form the bonding pad 400 in the bulk acoustic wave resonator and the lower plate 301 of the integrated capacitor 300, in which case the bonding pad 400 and the lower plate 301 are provided in the same layer and integrally; alternatively, the lower electrode conductive material layer extending from the non-resonance region to the bonding region forms the bonding pad 400, and a portion of the bonding pad 400 close to the lower electrode 201 serves as the lower plate 301. Or as shown in fig. 2, the lower electrode conductive material layer extends from the resonance region, where it forms the lower electrode 201, to the bonding region, where it forms the lower plate 301.
Specifically, the bonding pad 400 and the lower plate 301 are provided in the same layer and integrally; or the lower electrode 201, the bonding pad 400 and the lower electrode plate 301 are formed in the same layer and integrally on the manufacturing process by depositing a lower electrode conductive material layer, and are formed simultaneously by using the construction of a mask pattern in the patterning process of the lower electrode 201. The bonding pad 400 may take on a lattice shape, a ring shape, or the like. The shape of the lower plate 301 of the integrated capacitor 300 may be comprehensively designed into various shapes in combination with the capacity size of the integrated capacitor 300, the space size of the non-resonant region and the bonding region.
Further, the sealing pad 500 may be formed at the periphery of the resonance structure 200 simultaneously by the construction of the mask pattern in the patterning process of the lower electrode 201, i.e., the sealing pad 500 may be made of the same material as the lower electrode 201. The sealing pad 500 may be illustratively a continuous annular structure.
The piezoelectric material layer covering the lower electrode 201 and the lower plate 301 is formed by a thin film deposition process. The piezoelectric material layer may be formed of any piezoelectric material compatible with semiconductor processing, such as aluminum nitride, doped aluminum nitride, or titanate zirconate. The piezoelectric material layer is not only formed in the resonance region but may also extend to the non-resonance region as shown in fig. 1 or to the non-resonance region and the bonding region as shown in fig. 2. The layer of piezoelectric material extending to the non-resonant region or to the non-resonant region and the bonding region constitutes the dielectric layer 302 of the integrated capacitance 300 and the layer of piezoelectric material of the resonant region constitutes the piezoelectric layer 202 of the bulk acoustic wave resonator. The dielectric layer 302 of the integrated capacitor 300 and the piezoelectric layer 202 of the resonator can be formed simultaneously by constructing a mask pattern in the patterning process of the piezoelectric layer 202 of the bulk acoustic wave resonator, and the dielectric layer 302 and the piezoelectric layer 202 of the resonator can be arranged in the same layer and integrally.
The upper electrode 203 is formed to cover the piezoelectric layer 202 and the dielectric layer 302 by a thin film deposition process. The upper electrode 203 may have a single-layer or multi-layer structure. The upper electrode 203 may be formed of one or more conductive materials, and may be selected from various metals compatible with semiconductor processes, such as tungsten, molybdenum, iridium, aluminum, platinum, ruthenium, niobium, or hafnium. Further, the materials of the upper electrode 203 and the lower electrode 201 may be the same or different. The shape of the upper electrode 203 may be arbitrary, and the shape of the upper electrode 203 is not further limited in the present utility model. The projection profile of the upper electrode 203 on the substrate 100 may also be an irregular pattern or a regular pattern, such as: regular polygons such as triangles, rectangles, pentagons, hexagons, octagons, and the like.
Further, in the manufacturing process of the upper electrode 203, the upper electrode conductive material layer for manufacturing the upper electrode 203 needs to remain in the non-resonance region and/or the bonding region in addition to the resonance region. The upper electrode conductive material layer extending from the resonance region to the non-resonance region may be connected with the upper electrode 203 in the resonance region as shown in fig. 1, and further, the upper electrode conductive material layer in the non-resonance region may form the upper plate 303 of the integrated capacitor 300, in which case the upper electrode 203 and the upper plate 303 may be co-layered and integrally provided. Alternatively, the upper electrode conductive material layer of the bonding region is provided separately from the upper electrode 203 as shown in fig. 2. Further, the upper electrode conductive material layer of the bonding region may serve as both the upper plate 303 of the integrated capacitor 300 and the bonding pad 400 of the bulk acoustic wave resonator. The formation of the upper electrode 203, the bonding pad 400, and the upper plate 303 may be formed simultaneously with the patterning of the upper electrode 203 by depositing an upper electrode conductive material layer in a manufacturing process. The shape of the upper plate 303 of the integrated capacitor 300 may be comprehensively designed into various shapes in combination with the capacity size of the integrated capacitor 300, the space size of the non-resonant region and the bonding region, and the shape of the upper plate 303 may be the same as or different from the shape of the lower plate 301. The capacitance of the integrated capacitor 300 is adjusted by adjusting the relative area between the upper plate 303 and the lower plate 301 of the integrated capacitor 300 in the non-resonant region and/or the bonding region.
In another embodiment of the present utility model, when the area between the upper plate 303 and the lower plate 301 of the integrated capacitor 300 is fixed, ions may be implanted into the dielectric layer 302 of the integrated capacitor 300 by ion implantation based on the structure of the integrated capacitor 300 provided by the present utility model, according to the capacity of the integrated capacitor 300. The dielectric constant of the dielectric layer 302 of the integrated capacitor 300 is adjusted by precisely controlling the characteristics of the total dose, depth distribution and plane uniformity of the doped elements by ion implantation, thereby further precisely adjusting the capacity of the integrated capacitor 300. The type of ion implanted into dielectric layer 302 may be, by way of example, scandium, yttrium, magnesium, titanium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, and the like. When ions are injected into the dielectric layer of the integrated capacitor 300, the region where the piezoelectric layer 202 in the resonant structure 200 of the bulk acoustic wave resonator is located may not be ion-injected, so that the electromechanical coupling coefficient of the bulk acoustic wave resonator is prevented from further increasing due to the ion injection.
According to the utility model, the existing area of the non-resonance area and/or bonding area of the bulk acoustic wave resonator is utilized, the existing manufacturing process of the resonance structure 200 of the bulk acoustic wave resonator is utilized, the integrated capacitor 300 is formed on the non-resonance area and/or bonding area of the bulk acoustic wave resonator under the condition that the performance parameters of the existing bulk acoustic wave resonator resonance structure 200 are not changed and the chip area occupied by the bulk acoustic wave resonator is not changed, the additional space is not occupied, the additional process is not increased, the miniaturization trend of the device is complied, and the effect of adjusting the electromechanical coupling coefficient with the bulk acoustic wave resonator through electrical connection is facilitated.
It will be appreciated by those skilled in the art that additional layers (not shown) such as a mass loading layer, a passivation layer, a frame layer, etc. may be further provided on the upper electrode 203, and the specific structure and the manufacturing process are the same as those of the related art, which will not be described in detail in this embodiment.
Referring to fig. 3, fig. 3 shows a schematic diagram of a package assembly of a bulk acoustic wave resonator including an integrated capacitor according to the present utility model. As shown in fig. 3, at least two bulk acoustic wave resonators, at least 2 integrated capacitors 300, at least 2 bond pads, and a seal pad 500 are included on the substrate 100. It will be appreciated that the arrangement of the structures is as described above and will not be described in detail herein; fig. 3 shows only 2 bond pads, the location and number of which may be set according to the needs of a particular application.
Further, the bonding post 600 may be formed on the bonding pad, and the sealing ring 700 may be formed on the sealing pad 500, and the sealing ring 700 and the sealing pad 500 form a sealing ring. The bonding post 600 and the seal ring 700 may be formed of Au material or other suitable bonding metal materials.
Further, a cover plate 800 is provided, the cover plate 800 is disposed opposite to the substrate 100, and the thickness of the cover plate 800 can be 20 μ m-250 μ m, the material of the cover plate 800 may be any of glass, ceramic, silicon oxide, silicon nitride, aluminum nitride, and silicon carbide. The cap plate 800 is provided with a bonding through hole 900 and a re-wiring layer 910, the position of the bonding post 600 corresponds to the position of the bonding through hole 900, and the seal ring 700 may correspond to the position (not shown) of a seal pad on the cap plate 800. The substrate 100 and the cover plate 800 may be bonded together by the bonding posts 600 and the seal ring 700 to constitute a package assembly, completing the package of the chip including the bulk acoustic wave resonator.
Alternatively, the cover plate 800 may be formed of other device chips, and the chip including the bulk acoustic wave resonator and the other device chips may be bonded together through the bonding posts 600 and the seal ring 700 to form a package assembly.
Because the upper polar plate 303 or the lower polar plate 301 and the bonding pad can be arranged in the same layer and integrally, the integrated capacitor 300 can be electrically connected with not only the bulk acoustic wave resonator, but also other circuit components of the packaging assembly through the bonding column 600, thereby being convenient for constructing various functional circuit modules.
Referring to fig. 4-5, fig. 4-5 are comparative examples of a filter chip of the present utility model including an integrated capacitor 300.
As shown in fig. 4 to 5, a bulk acoustic wave filter chip including a substrate 1000, a bulk acoustic wave resonator 2000, an integrated capacitance 3000, and a pad 4000 is provided in the comparative example. The integrated capacitance 3000 in the comparative example and the bulk acoustic wave resonator 2000 can be formed together. Specifically, as shown in fig. 4, the upper electrode plate 3003 of the integrated capacitor 3000 is integrally formed with the upper electrode 2003 of the resonator, and the lower electrode 2001 of the integrated capacitor 3000 is disposed separately from the lower electrode 2001 of the bulk acoustic wave resonator 2000. Alternatively, as shown in fig. 5, the lower electrode 2001 of the integrated capacitor 3000 may be integrally formed with the lower electrode 3001 of the bulk acoustic wave resonator 2000, and the upper electrode 3003 of the integrated capacitor 3000 may be provided separately from the upper electrode 2003 of the resonator. The dielectric layer 3002 of the integrated capacitor 3000 is of the same material and is integrally provided with the piezoelectric layer 2002 in the resonator. The upper plate 3003 of the integrated capacitor 3000 has a mass loading layer 3004 thereon and a cavity 3005 is provided below the lower plate 3001 of the integrated capacitor 300.
As can be seen from fig. 4 to 5, the integrated capacitor 3000 in the comparative example is substantially another bulk acoustic wave resonator structure, and although the integrated capacitor 3000 in the comparative example can be formed together with the bulk acoustic wave resonator 2000, it is constructed in a place where the bulk acoustic wave resonator structure can be formed in the bulk acoustic wave filter chip, and occupies the chip area that can be used to form the bulk acoustic wave resonator, which is disadvantageous for miniaturization of the chip.
In contrast, the bulk acoustic wave resonator provided by the utility model comprises the integrated capacitor 300, and the existing space of the bulk acoustic wave resonator is fully utilized in the preparation process, so that other areas of a chip are not occupied; meanwhile, the utility model discloses in utilized the existing manufacturing procedure of bulk acoustic wave resonator, need not additionally add the process, saved the cost. And, a polar plate of the integrated capacitor 300 is integrally connected with the bonding pad, so that the integrated capacitor is conveniently and freely connected with each part in the packaging assembly, and a functional module is constructed.
Further, the utility model also provides an electronic device, which can be used in the field of portable communication devices such as mobile phones, personal digital assistants, electronic game devices and the like. The electronic device includes any of the bulk acoustic wave resonators in the above embodiments.
The utility model has been described in connection with specific embodiments, but it will be apparent to those skilled in the art that these descriptions are intended to be illustrative and not limiting of the scope of the utility model. Various modifications and alterations of this utility model will occur to those skilled in the art in light of the spirit and principles of this utility model, and such modifications and alterations are also within the scope of this utility model.
Claims (10)
1. A bulk acoustic wave resonator, comprising:
a substrate;
a resonant structure including an upper electrode, a piezoelectric layer, and a lower electrode;
an acoustic wave reflecting structure formed in or on the substrate; the overlapping area between the acoustic wave reflecting structure and the resonance structure is the resonance area of the bulk acoustic wave resonator;
at least two bonding pads, wherein the bonding pads are formed on the substrate, and the area where the bonding pads are positioned is a bonding area; the area between the resonance area and the bonding area is a non-resonance area of the bulk acoustic wave resonator;
an integrated capacitor comprising an upper plate, a dielectric layer and a lower plate, the integrated capacitor being formed in the non-resonant region and/or bonding region of the bulk acoustic wave resonator;
at least a portion of at least one of the bond pads acts as an upper plate or a lower plate of the integrated capacitor.
2. The bulk acoustic wave resonator of claim 1, wherein: the upper electrode plate of the integrated capacitor and the upper electrode of the bulk acoustic wave resonator are arranged on the same layer and made of the same conductive material.
3. The bulk acoustic wave resonator of claim 2, wherein: and an upper polar plate of the integrated capacitor and an upper electrode of the bulk acoustic wave resonator are integrally arranged.
4. The bulk acoustic wave resonator of claim 1, wherein: the lower electrode plate of the integrated capacitor and the lower electrode of the bulk acoustic wave resonator are arranged on the same layer and made of the same conductive material.
5. The bulk acoustic wave resonator of claim 4, wherein: and the lower pole plate of the integrated capacitor and the lower electrode of the bulk acoustic wave resonator are integrally arranged.
6. The bulk acoustic wave resonator of claim 1, wherein: the dielectric layer of the integrated capacitor is arranged on the same layer as the piezoelectric layer of the bulk acoustic wave resonator and is made of the same conductive material.
7. The bulk acoustic wave resonator of claim 6, wherein: the dielectric layer of the integrated capacitor is integrally arranged with the piezoelectric layer of the bulk acoustic wave resonator.
8. The bulk acoustic wave resonator according to claim 6 or 7, characterized in that: the dielectric layer has a dielectric constant different from that of the piezoelectric layer.
9. A package assembly, characterized in that: a bulk acoustic wave resonator comprising any of claims 1-8.
10. An electronic device, characterized in that: comprising the package assembly of claim 9.
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| CN202223279964.3U CN219041754U (en) | 2022-12-07 | 2022-12-07 | Bulk acoustic wave resonator, packaging assembly comprising same and electronic equipment |
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| CN202223279964.3U CN219041754U (en) | 2022-12-07 | 2022-12-07 | Bulk acoustic wave resonator, packaging assembly comprising same and electronic equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117134736A (en) * | 2023-10-26 | 2023-11-28 | 深圳新声半导体有限公司 | Bulk acoustic wave resonator integrated with capacitor and preparation method thereof |
| CN117318664A (en) * | 2023-08-30 | 2023-12-29 | 华南理工大学 | Acoustic wave filter assembly, acoustic wave filter and manufacturing method |
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2022
- 2022-12-07 CN CN202223279964.3U patent/CN219041754U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117318664A (en) * | 2023-08-30 | 2023-12-29 | 华南理工大学 | Acoustic wave filter assembly, acoustic wave filter and manufacturing method |
| CN117134736A (en) * | 2023-10-26 | 2023-11-28 | 深圳新声半导体有限公司 | Bulk acoustic wave resonator integrated with capacitor and preparation method thereof |
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