CN218997349U

CN218997349U - Solid state laser system with wavelength 488 nanometers

Info

Publication number: CN218997349U
Application number: CN202320266749.5U
Authority: CN
Inventors: 杨阳; 王政
Original assignee: Beijing Xinyuan Chuangtong Electronic Technology Co ltd
Current assignee: Beijing Xinyuan Chuangtong Electronic Technology Co ltd
Priority date: 2023-02-21
Filing date: 2023-02-21
Publication date: 2023-05-09
Anticipated expiration: 2033-02-21

Abstract

The application provides a solid laser system with wavelength 488 nanometers, which is used for solving the technical problem that the energy conversion efficiency of the laser system is lower. Wherein, a solid state laser system of wavelength 488 nanometers includes at least: a semiconductor stage for providing analog control signals; a semiconductor laser light source for outputting laser light having a wavelength of 488 nanometers; the controller is respectively connected with the semiconductor machine and the semiconductor laser light-emitting source circuit and is used for receiving the analog control signal and converting the analog control signal into a digital control signal; and also used for outputting digital control signals; the semiconductor laser light source is also used for receiving the collection power and the collection current from the semiconductor laser light source; the power feedback signal and the current feedback signal are converted into power feedback signals and transmitted to the semiconductor machine, so that the semiconductor machine can monitor the output power and the output current of the semiconductor laser light-emitting source, the setting parameters of the equipment are not required to be adjusted, and the response speed is improved.

Description

Solid state laser system with wavelength 488 nanometers

Technical Field

The application relates to the technical field of laser application, in particular to a solid laser system with wavelength of 488 nanometers.

Background

The gas laser is a device for generating laser by using gas as working substance, and is composed of three main parts of active gas in discharge tube, resonant cavity formed from a pair of reflectors and excitation source. Gas lasers are typically electrically stimulated. Under proper discharge conditions, the gas particles are selectively excited to a certain high energy level by electron collision excitation, energy transfer excitation and the like, and stimulated emission transition is generated. The gas laser is typically an argon ion laser. The working substance is inert gas argon, and the laser is generated by argon ion excitation. The argon ion laser is mainly used for laser display, information processing laser spectrum research, hologram, spectrum analysis, medical treatment, industrial processing and the like.

In implementing the prior art, the inventors found that:

the argon ion laser needs a large voltage when working, needs to be excited by a high voltage of about 1500V, and has serious working heating phenomenon, so that about 50% of energy is converted into heat, and the energy conversion efficiency is low.

Therefore, it is desirable to provide a solid state laser system with a wavelength of 488 nm to solve the technical problem of low energy conversion efficiency.

Disclosure of Invention

The embodiment of the application provides a solid laser system with wavelength 488 nanometers, which is used for solving the technical problem of low energy conversion efficiency.

Specifically, a solid state laser system having a wavelength of 488 nanometers, comprising:

the semiconductor machine is used for providing analog control signals;

the semiconductor laser luminous source is used for outputting laser with wavelength of 488 nanometers according to the analog control signal;

the controller is respectively connected with the semiconductor machine and the semiconductor laser light-emitting source circuit and is used for receiving analog control signals from the semiconductor machine; the digital control signal is also used for converting the analog control signal into a digital control signal; the digital control signal is also used for outputting the digital control signal to the semiconductor laser luminous source so as to control the output power of the semiconductor laser luminous source;

the controller is also used for receiving the collected power from the semiconductor laser luminous source; the power feedback signal is also used for converting the acquired power into a power feedback signal; the power feedback signal is also used for outputting the power feedback signal to the semiconductor machine so that the semiconductor machine can monitor the output power of the semiconductor laser luminous source;

the controller is also used for receiving the collected current from the semiconductor laser luminous source; the current feedback signal is also used for converting the acquired current into a current feedback signal; and the semiconductor machine is also used for outputting a current feedback signal to the semiconductor machine so as to facilitate the semiconductor machine to monitor the output current of the semiconductor laser luminous source.

Further, the controller includes:

the connection module is connected with the circuit of the semiconductor machine and is used for receiving the analog control signal from the semiconductor machine;

and the cascade program-controlled gain amplifier group is connected with the connection module circuit and is used for amplifying the circuit gain of the corresponding analog control signal.

Further, the controller further includes:

and the operational amplifier is connected with the cascade program-controlled gain amplifier group circuit and is used for setting the gain range of the cascade program-controlled gain amplifier group.

Further, the working voltage of the controller is 24V direct current.

Further, the maximum input power range of the semiconductor laser light-emitting source is 30-40 watts.

Further, the cascade programmable gain amplifier group comprises a programmable gain amplifier, a first gain amplifier and a second gain amplifier.

Further, the circuit gain of the program controlled gain amplifier is 10dB at most, the circuit gain of the first gain amplifier is 63dB at most, and the circuit gain of the second gain amplifier is 95dB at most.

Further, the system further comprises:

and the monitoring module is connected with the circuit of the semiconductor laser luminous source and is used for monitoring the output state of the semiconductor laser luminous source.

Further, the system further comprises:

and the display is connected with the monitoring module circuit and used for displaying the output state information of the semiconductor laser luminous source.

Further, the operational amplifier is connected with a programmable gain amplifier circuit.

The technical scheme provided by the embodiment of the application has at least the following beneficial effects:

the semiconductor laser light source is adopted to output laser with the wavelength of 488 nanometers, and the excitation can be completed only by 24V direct current. The controller is connected with the semiconductor machine and the semiconductor laser luminous source through the circuit, receives the analog control signal from the semiconductor machine and converts the analog control signal into the digital control signal, and then outputs the digital control signal to the semiconductor laser luminous source so as to control the output power of the semiconductor laser luminous source, thereby realizing the analog circuit and having high signal reliability and good continuity.

Drawings

The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute an undue limitation to the application. In the drawings:

fig. 1 is a schematic structural diagram of a solid laser system with wavelength 488 nm according to an embodiment of the present disclosure;

fig. 2 is a schematic connection diagram of a programmable gain amplifier, a first gain amplifier, and a second gain amplifier according to an embodiment of the present application.

100. Solid-state laser system

11. Semiconductor machine

12. Semiconductor laser light source

13. And a controller.

Detailed Description

For the purposes, technical solutions and advantages of the present application, the technical solutions of the present application will be clearly and completely described below with reference to specific embodiments of the present application and corresponding drawings. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.

Referring to fig. 1, a solid state laser system 100 with a wavelength of 488 nm according to an embodiment of the present application includes:

the semiconductor device 11 is used for providing analog control signals.

The semiconductor laser light emitting source 12 is configured to output laser light having a wavelength of 488 nm according to an analog control signal.

The semiconductor laser light source 12 is understood to be a laser diode, which uses semiconductor material as a working substance. The specific process of lasing different species varies due to differences in the structure of the species. Common working substances are gallium arsenide (GaAs), cadmium sulfide (CdS), indium phosphide (InP), zinc sulfide (ZnS), etc. The excitation modes include three modes of electric injection, electron beam excitation and optical pumping. The semiconductor laser can be divided into a homojunction, a single heterojunction, a double heterojunction and the like. The homojunction laser and the single heterojunction laser are mostly pulse devices at room temperature, and the double heterojunction laser can realize continuous operation at room temperature.

In the present application, the semiconductor laser light emitting source 12 is configured to output laser light having a wavelength of 488 nanometers. In the 488 nm laser beam, all photons have the same wavelength, the same phase, the same polarization direction and the same propagation direction.

It is important to note that the solid state laser system 100 provided herein may employ a low voltage excitation semiconductor laser light emitting source 12. In one embodiment, the semiconductor laser light source 12 is energized using a 24V DC power supply. It will be appreciated that the semiconductor laser light source 12 is energized with a low voltage such that the corresponding amount of current is also small, on the order of milliamps. Compared with the existing gas laser system, about 50% of energy is converted into heat, and the solid laser system 100 provided by the application can not generate serious heating phenomenon and does not need to be additionally provided with heat dissipation equipment for cooling. It can be seen that the capability of exciting the semiconductor laser light emitting source 12 at low voltage has high conversion efficiency, and that part of energy does not need to be wasted to act on the heat sink.

A controller 13 electrically connected to the semiconductor device 11 and the semiconductor laser light source 12, respectively, for receiving analog control signals from the semiconductor device 11; the digital control signal is also used for converting the analog control signal into a digital control signal; and also for outputting digital control signals to the semiconductor laser light emitting source 12 to control the output power of the semiconductor laser light emitting source 12.

The controller 13 can be understood as processing the analog control signal transmitted from the semiconductor device 11 to generate a driving signal for driving the light source 12 of the semiconductor laser. In a specific embodiment, the controller 13 may be understood as a laser control communication board. The laser control communication board receives the analog control signal transmitted by the semiconductor machine 11, and converts the voltage through the analog-to-digital conversion unit. That is, voltage conversion is performed inside the laser control communication board, and an analog control signal is converted into a digital control signal. Next, a digital control signal is transmitted to the semiconductor laser light emitting source 12 through serial communication. The semiconductor laser light emitting source 12 receives the digital control signal and outputs laser light having a wavelength of 488 nm according to the analog control signal.

The controller 13 is also used for receiving the collected power from the semiconductor laser light emitting source 12; the power feedback signal is also used for converting the acquired power into a power feedback signal; and is further configured to output a power feedback signal to the semiconductor device 11, so that the semiconductor device 11 monitors the output power of the semiconductor laser light source 12.

The controller 13 is also used for receiving the collection current from the semiconductor laser light emitting source 12; the current feedback signal is also used for converting the acquired current into a current feedback signal; and is further configured to output a current feedback signal to the semiconductor device 11, so that the semiconductor device 11 monitors the output current of the semiconductor laser light emitting source 12.

It will be appreciated that after the semiconductor laser light source 12 receives the digital control signal, a corresponding power feedback signal and a current feedback signal are set according to the analog control signal. In a specific embodiment, the power feedback signal fed back by the light source 12 of the semiconductor laser is also transmitted to a corresponding definition pin of the device of the semiconductor machine 11 in a mode of modulating an analog signal, so that the machine works normally.

Specifically, the control communication board sends a query command to the semiconductor laser light emitting source 12. After receiving the inquiry command, the semiconductor laser light emitting source 12 collects the collected power when the laser works normally, and then transmits the collected power to the controller 13 through serial communication. The controller 13 receives the collected power from the semiconductor laser light emitting source 12, converts the digital voltage amount into an analog voltage amount by the digital-to-analog conversion unit, and feeds back the analog voltage amount converted voltage to the semiconductor stage.

Wherein, the output power of the controller 13 is 0-100% adjustable. The controller 13 has a power monitoring and current monitoring function at the same time.

Further, the controller 13 includes:

a connection module electrically connected to the semiconductor device 11 for receiving an analog control signal from the semiconductor device 11;

The connection module may be a DB25 connector. The DB25 connector can be understood as a connector of a semiconductor device which is compatible in connection with definition. The DB25 connector is an analog 25 pin plug of the D-Sub connector family. It is known that the DB25 connector is mainly used for serial connection, allowing asynchronous transmission of data provided by standard RS-232. In a specific embodiment, a DB25 connector is electrically connected to the semiconductor device 11 for receiving analog control signals from the semiconductor device 11.

The cascaded set of programmable gain amplifiers may be understood as being used to analog modulate analog control signals to generate drive signals for driving semiconductor laser light emitting sources 12.

The gain can be understood as the magnification. Briefly, it is understood that the ratio of the signal output to the signal input of a system. For example, the gain of an amplifier indicates the power amplification of the amplifier, i.e., the ratio of the output power to the input power. The ratio is often expressed logarithmically. The circuit gain may be understood as a power gain, a voltage gain, a current gain, etc. of the circuit. Power gain is understood to be the ratio of output power to input power in a circuit.

An AGC (automatic gain control) circuit is used to amplify the circuit gain. Wherein the programmable gain amplifier is used to implement the core function of the AGC.

The programmable gain amplifier may be an AD603 programmable gain amplifier. The first gain amplifier may be an OPA690 gain amplifier. The second gain amplifier may be an OPA2614 gain amplifier. The OPA690 gain amplifier achieves initial amplification of the voltage signal. The OPA2614 gain amplifier achieves a re-amplification of the voltage signal. Wherein an output current of up to 300 milliamps may be provided to the end signal by the OPA2614 gain amplifier. The P_SET pin of the AD603 programmable gain amplifier is connected with the P_SET pin of the DB25 connector.

In a specific embodiment, the power feedback signal and the current feedback signal fed back by the light emitting source 12 of the semiconductor laser are also transmitted to corresponding definition pins of the device of the semiconductor machine 11 in an analog signal modulation manner, so that the machine works normally.

Referring to fig. 2, a schematic connection diagram of a programmable gain amplifier, a first gain amplifier, and a second gain amplifier is provided. The programmable gain amplifier may be an AD603 programmable gain amplifier. The first gain amplifier may be an OPA690 gain amplifier. The second gain amplifier may be an OPA2614 gain amplifier. The OPA690 gain amplifier achieves initial amplification of the voltage signal. The OPA2614 gain amplifier achieves a re-amplification of the voltage signal. In a specific embodiment, the controller 13 receives the harvested power from the semiconductor laser light emitting source 12 and converts it into a power feedback signal according to the harvested power. Finally, the power feedback signal is input to the semiconductor device 11, so that the semiconductor device 11 can monitor the output power of the semiconductor laser light source 12. The P_BACK pin of the OPA2614 gain amplifier is connected with the P_BACK pin of the DB25 connector.

The programmable gain amplifier may be an AD603 programmable gain amplifier. The first gain amplifier may be an OPA690 gain amplifier. The OPA690 gain amplifier achieves initial amplification of the voltage signal. In a specific embodiment, the controller 13 receives the collected current from the semiconductor laser light emitting source 12 and converts it into a current feedback signal according to the collected current. Finally, the current feedback signal is input to the semiconductor device 11, so that the semiconductor device 11 can monitor the output current of the semiconductor laser light source 12.

Further, the circuit gain of the program-controlled gain amplifier is 10dB at most, the circuit gain of the first gain amplifier is 63dB at most, and the circuit gain of the second gain amplifier is 95dB at most.

The dB is the gain unit. In a specific embodiment, the gains of the three-stage fixed gain amplifying circuit can reach up to 10dB, 63dB and 95dB respectively. The voltage is reduced due to the introduction of the OPA2614 gain amplifier, so that the output current can reach 300 milliamperes. The design can fully meet the requirements of the driving signal of the semiconductor laser light emitting source 12 and the feedback signal of the semiconductor machine 11.

Further, the controller 13 further includes a withering unit to ensure that the output signal of each stage and the final signal of the system in the cascade program controlled gain amplification process can be withered. It will be appreciated that the withering unit can solve the zero drift output caused by the difference in the production of the IC chip or the PCB chip, and ensure the accuracy of the controller 13 in processing the analog control signal.

Further, the controller 13 further includes:

The operational amplifier may be an amplifying circuit composed of NE5532 chips, that is, the voltage regulating function is realized by the configuration of peripheral circuits. The NE5532 chip has the characteristics of good noise performance, excellent output driving capability, quite high small signal bandwidth, large power supply voltage range and the like.

In a specific embodiment of the present application, the amplifying circuit composed of NE5532 can adjust the function of the program control range of the AD603 program control gain amplifier, so as to control the AD603 program control gain amplifier to generate different voltage gains. In a specific embodiment, the vg_p_set pin of the NE5532 chip is connected to the vg_p_set pin of the programmable gain amplifier.

The operational amplifier may be an amplifying circuit composed of NE5532 chips, that is, the voltage regulating function is realized by the configuration of peripheral circuits. It will be appreciated that the NE5532 chip is used to process the harvested power fed back by the semiconductor laser light emitting source 12. In a specific embodiment, the vg_i_back pin of the NE5532 chip is connected to the vg_i_back pin of the programmable gain amplifier.

The operational amplifier may be an amplifying circuit composed of NE5532 chips, that is, the voltage regulating function is realized by the configuration of peripheral circuits. It will be appreciated that the NE5532 chip is used to process the collected current fed back by the semiconductor laser light emitting source 12. In a specific embodiment, the vg_p_back pin of the NE5532 chip is connected to the vg_p_back pin of the programmable gain amplifier.

Further, the working voltage of the controller is 24V direct current.

In a specific embodiment, the controller 13 uses a low voltage to activate, and the current is in the milliamp range. From this, the power box of the controller 13 is connected with 24V dc, so as to control the laser emission, thereby improving the safety of the controller 13.

It is understood that the semiconductor light emitting source may be of two types, namely, a semiconductor laser having an output power of 30mW and a wavelength of 75mW of 488 nm. In addition, some parameters of the semiconductor laser include: beam quality, spot diameter, divergence angle, light extraction mode, ambient temperature, maximum input power, polarization rate, etc.

Further, the maximum input power range of the semiconductor laser light emitting source 12 is 30-40 watts.

In the system provided by the application, the maximum input power is 30-40 watts. It will be appreciated from this that the semiconductor laser light emitting source 12 has a lower maximum power than the argon ion laser, and can generate laser light which is also stable. The severe heat generation phenomenon is not caused due to the low input power, and the related equipment of the controller 13 is simple due to the low input power.

It is understood that the semiconductor laser light source 12 may be a semiconductor laser head.

Further, the semiconductor laser light emitting source 12 includes a cylindrical laser head.

The symmetrical design and axial air flow of the cylindrical laser head provides optimal mechanical packaging to ensure optimal beam pointing stability and rapid warm-up. By using flexible tubing between the laser head and the blower assembly, mechanical vibration caused by the blower is almost eliminated.

Further, the system 100 further includes:

and the monitoring module is in circuit connection with the semiconductor laser light emitting source 12 and is used for monitoring the output state of the semiconductor laser light emitting source 12.

The monitoring module can be understood as a module formed by an STM32F303 singlechip. The monitoring module is connected with the semiconductor laser light emitting source 12 in a circuit and is responsible for control logic such as opening, initializing, light emitting and the like of the semiconductor laser light emitting source 12.

The controller 13 performs analog debugging on the signal link, but the functions of turning on, turning off, and emitting light of the semiconductor laser light source 12 also need to be controlled by using an STM32F303 singlechip. In the system initialization process, in the laser system provided by the application, the monitoring module controls the laser to preheat. When the laser is detected to be in a preparation completion state, an instruction for opening the laser is sent, so that light is emitted normally. The monitoring module is used for monitoring the output state of the semiconductor laser light emitting source 12. The output state includes the time-of-use information, the operation state information, and the like of the semiconductor laser light emitting source 12.

Further, the system 100 further includes:

and the display is connected with the monitoring module circuit and is used for displaying the output state information of the semiconductor laser light emitting source 12.

The display may be understood as an OLED (organic light-emitting diode) display. In the working process of the system, the STM32F303 singlechip continuously inquires the output state of the semiconductor laser light-emitting source 12. The STM32F303 singlechip displays the output state of the semiconductor laser light-emitting source 12 on an OLED display through a 485 bus. The display is connected with the monitoring module circuit, so that the running state of the semiconductor laser light-emitting source 12 can be conveniently checked, and the high-efficiency and stable running of the semiconductor laser light-emitting source 12 is ensured.

It is understood that the OLED belongs to a current type organic light emitting device. The organic light emitting device emits light by injection and recombination of carriers, and the light emission intensity is proportional to the injected current. Under the action of an electric field, holes generated by the anode and electrons generated by the cathode of the OLED move, are respectively injected into the hole transport layer and the electron transport layer, and migrate to the light emitting layer. When the two meet at the light emitting layer, an energy exciton is generated, thereby exciting the light emitting molecule to finally generate visible light.

The 485 bus may be understood as an RS485 bus. The RS485 bus is a standard defining the electrical characteristics of the drivers and receivers in a balanced digital multi-drop system. The RS485 bus adopts a half-duplex working mode and supports multi-point data communication. The RS485 bus network topology generally adopts a bus type structure with matched terminals, namely, each node is connected in series by adopting a bus, and a ring or star network is not supported.

Further, the monitoring module employs a FreeRTOS system to enable the monitoring module to monitor the semiconductor laser light source 12 in real time. The monitoring module can be understood as a module formed by an STM32F303 singlechip. The monitoring module is connected with the semiconductor laser light emitting source 12 in a circuit and is responsible for control logic such as opening, initializing, light emitting and the like of the semiconductor laser light emitting source 12.

The STM32F303 single-chip microcomputer can be understood as a ARM (AdvancedRISCMachines) microcontroller. The ARM microcontroller is based on an ARMCortex-M432-bit RISC core, has the working frequency of up to 72MHz, and is embedded with a floating point unit (FPU, floatingPointUnit), a memory protection unit (MPU, memoryProtectionUnit) and an embedded tracking macro unit (ETM).

And running a FreeRTOS system in the STM32F303 singlechip. It is understood that the FreeRTOS system may be understood as a lightweight operating system. The operating system functions include: task management, time management, semaphores, message queues, memory management, logging functions, software timers, coroutines, etc.

In the specific embodiment of the application, the FreeRTOS system is operated in the STM32F303 single-chip microcomputer, so that the instantaneity of the controller 13 system, namely, the control and response speed of the semiconductor laser light emitting source 12 are improved, and the output efficiency is improved.

In a laser control system, it is mainly divided into 5 tasks: the method comprises the steps of initializing a task, interrupting a processing task, sending an instruction, initializing an OLED (organic light emitting diode) and switching an indicator lamp task. These tasks run synchronously in real time in the system, and cooperate with each other by synchronous or asynchronous methods to efficiently control the controller 13, including in particular:

after entering the system, the initializing task configures parameters of all tasks, such as task handle, size of task stack, etc. Through reasonable configuration parameters, the memory of the STM32F303 singlechip can be greatly saved, and overflow is avoided, so that the memory of the STM32F303 singlechip is efficiently utilized, and the utilization efficiency is improved.

The OLED initialization task can initialize the OLED display synchronously at the beginning of all tasks. In the conventional pipeline code, according to the transmission rate of an interface IIC (integrated circuit bus) of the OLED display, the initialization of the OLED display to the point that data can be actually displayed requires about 20S, and then other subsequent configuration and display tasks are performed.

The switch indicator lamp task continuously scans the state of the switch, and then transmits the processing result to other tasks through the queue. Therefore, blocking to other tasks during the anti-shake operation of the switch can be avoided, and the efficiency of the system is improved.

An asynchronous task structure is formed between the interrupt processing task and the instruction sending task. The interrupt receiving function transmits a binary signal upon completion of a frame of data received from the semiconductor laser light emitting source 12. When the interrupt processing task acquires the binary semaphore, a response action of responding to the receiving is started, so that the blocking of the serial port receiving interrupt is avoided. After the corresponding interrupt processing is completed, the corresponding result is transferred to the instruction sending task through the task queue. When the instruction sending task is responded, the next instruction is sent continuously according to logic. The two tasks and an interrupt function form an efficient communication system, so that the accuracy of data receiving is guaranteed, the operation efficiency of communication is improved, and the light emitting speed of the semiconductor laser light emitting source 12 is improved.

In the serial interrupt function, in order to receive data of indefinite length, data is buffered into a buffer array whenever there is a data-triggered interrupt. If the serial interrupt idle register is found to be set, the data integrity is checked, the binary semaphore is filled to the interrupt handling task, and then the data of the next trigger interrupt is received quickly. And after the binary semaphore is obtained, the interrupt processing task is asynchronously executed with the serial port interrupt function, so that the loss of data is avoided, and the efficiency of the serial port for receiving the data is improved.

In summary, in the solid laser system with wavelength 488 nm provided in the present application, the semiconductor laser light source is used to output laser with wavelength 488 nm, and only 24V dc is needed to complete excitation. The controller is connected with the semiconductor machine and the semiconductor laser luminous source through the circuit, receives the analog control signal from the semiconductor machine and converts the analog control signal into the digital control signal, and then outputs the digital control signal to the semiconductor laser luminous source so as to control the output power of the semiconductor laser luminous source, thereby realizing the analog circuit and having high signal reliability and good continuity. By setting the cascade program-controlled gain amplifier group, the circuit gains of the corresponding analog control signals are amplified, so that the circuit gains of the program-controlled gain amplifier, the first gain amplifier and the second gain amplifier can respectively reach 10dB, 63dB and 95dB, the output current is 300 mA at most, the output requirement of a semiconductor laser luminous source is met, and the system safety is improved. The output state of the semiconductor laser light source can be fed back in real time by arranging the monitoring module and the display and used for monitoring and displaying the output state of the semiconductor laser light source, so that the semiconductor machine can adjust control signals in real time without adjusting setting parameters of equipment, and the structure is simple. The 24V direct current power supply can excite the semiconductor laser luminous source, so that the corresponding current quantity is smaller and is approximately in the milliamp level. At this time, the system does not generate serious heat, so that the energy used for exciting the light-emitting source of the semiconductor laser is not wasted greatly, and the energy conversion efficiency is improved.

Claims

1. A solid state laser system having a wavelength of 488 nanometers, comprising:

the semiconductor machine is used for providing analog control signals;

2. The system of claim 1, wherein the controller comprises:

3. The system of claim 2, wherein the controller further comprises:

4. The system of claim 1, wherein the operating voltage of the controller is 24 vdc.

5. The system of claim 1, wherein the semiconductor laser light source has a maximum input power in the range of 30 to 40 watts.

6. The system of claim 2, wherein the cascade set of programmable gain amplifiers comprises a programmable gain amplifier, a first gain amplifier, a second gain amplifier.

7. The system of claim 6, wherein the programmed gain amplifier has a circuit gain of up to 10dB, the first gain amplifier has a circuit gain of up to 63dB, and the second gain amplifier has a circuit gain of up to 95dB.

8. The system of claim 1, wherein the system further comprises:

9. The system of claim 1, wherein the system further comprises:

10. The system of claim 3, wherein the operational amplifier is coupled to a programmable gain amplifier circuit.