CN218984379U

CN218984379U - Silicon carbide grinds copper dish

Info

Publication number: CN218984379U
Application number: CN202123400841.6U
Authority: CN
Inventors: 郭正富; 蔡国基
Original assignee: Qingdao Jiazhan Rio Tinto Semiconductor Co ltd
Current assignee: Qingdao Jiazhan Rio Tinto Semiconductor Co ltd
Priority date: 2021-12-30
Filing date: 2021-12-30
Publication date: 2023-05-09
Anticipated expiration: 2031-12-30

Abstract

The utility model provides a silicon carbide grinding copper disc, which comprises a plurality of grooves which are arranged in concentric circles, wherein the grooves comprise an inner ring groove and an outer ring groove, and the inner diameter of the inner ring groove is smaller than that of the outer ring groove.

Description

Silicon carbide grinds copper dish

Technical Field

The utility model belongs to the technical field of silicon carbide cutting, grinding and polishing, and particularly relates to a silicon carbide grinding copper disc.

Background

At present, monocrystalline silicon carbide is widely applied to the fields of power electronics, radio frequency devices, optoelectronic devices and the like because of stable chemical properties, high heat conductivity coefficient, small thermal expansion coefficient, good wear resistance, wide forbidden bandwidth, high breakdown field intensity, high saturated electron mobility and other excellent properties.

When the silicon carbide processing program is involved, the silicon carbide processing program is essentially subjected to the process steps of cutting, grinding, chamfering, copper polishing, cleaning and the like. In the prior art, copper polishing easily increases the temperature of a copper disc, so that the copper disc expands and the disc surface protrudes, thereby causing a larger difference in the total thickness change TTV (Total Thickness Variation) of the substrate sheet, and further affecting the next process steps, such as the polishing processing time, cost and substrate sheet quality. There is a need to develop a more excellent copper plate structure to solve the above problems.

Disclosure of Invention

The utility model provides a silicon carbide grinding copper disc, which solves the problems.

The technical scheme of the utility model is realized as follows: the utility model provides a silicon carbide grinds copper dish, this copper dish includes a plurality of recesses that are concentric circles and set up, the recess includes inner circle recess and outer lane recess, the internal diameter of inner circle recess is less than the internal diameter setting of outer lane recess.

As a preferred embodiment, the copper plate has an outer diameter of 800 to 1300mm and a height of 30 to 50cm.

As a preferred embodiment, the upper surface of the copper plate is provided with spiral or concentric polishing grooves.

As a preferred embodiment, the number of the grooves of the inner ring is 1, and the number of the grooves of the outer ring is 1.

As a preferred embodiment, the width of the inner ring groove and the width of the outer ring groove are respectively 0.5 cm to 2cm, and the depth is respectively 30cm to 50cm.

As a preferred implementation mode, the bottom of the copper plate is connected with a base, and a pressurizing plate is correspondingly arranged above the copper plate.

As a preferred embodiment, the inner ring groove is aligned with the outer edge of the pressing plate, and the outer ring groove is aligned with the center of the pressing plate.

After the technical scheme is adopted, the utility model has the beneficial effects that:

1. according to the utility model, the inner ring groove and the outer ring groove are respectively arranged on the copper disc, so that the expansion change of the copper disc in the processing process can be reduced, the service life of the copper disc can be prolonged, the production cost can be reduced, the grinding rotating speed can be increased, and the substrate slice removing efficiency can be further improved.

2. The number of grooves for the problem of thermal expansion and contraction is preferably two, namely an inner ring groove and an outer ring groove. When there is only one groove, the copper disk still has expansion problems and TTV is difficult to control. When the number of the grooves exceeds two, the thinning efficiency of the substrate sheet can be reduced under the same operation parameters in the copper polishing process, if the thinning efficiency is increased, the rotating speed of the copper disc is increased, but the rotating speed of the copper disc is increased, the temperature of the disc surface is increased, when the temperature exceeds 38 ℃, wax can start to melt, the substrate sheet can fly out, and therefore the number of the grooves is two, and the use efficiency is optimal.

Drawings

In order to more clearly illustrate the embodiments of the utility model or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the utility model, and that other drawings can be obtained according to these drawings without inventive faculty for a person skilled in the art.

FIG. 1 is a top view of a copper disk;

fig. 2 is a schematic view of a usage structure of a copper disk.

In the figure, 1-an inner ring groove; 2-an outer ring groove; 3-copper plate; 4-grinding grooves; 5-a base; 6-pressurizing the plate.

Detailed Description

The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

As shown in fig. 1 and 2, a silicon carbide grinding copper disc 3 comprises a plurality of grooves which are concentrically arranged, wherein each groove comprises an inner ring groove 1 and an outer ring groove 2, and the inner diameter of each inner ring groove 1 is smaller than the inner diameter of each outer ring groove 2.

The outer diameter of the copper plate 3 is 800-1300 mm, and the height is 30-50 cm.

The upper surface of the copper plate 3 is provided with a spiral or concentric polishing groove 4.

The number of the inner ring grooves 1 is 1, and the number of the outer ring grooves 2 is 1.

The widths of the inner ring groove 1 and the outer ring groove 2 are 0.5-2 cm, and the depths are 30-50 cm.

The bottom connection of copper dish 3 is provided with base 5, and the top of copper dish 3 corresponds to be provided with pressurization board 6.

When the copper plate 3 is used for processing, the inner ring groove 1 is aligned with the outer edge of the pressing plate 6, the outer ring groove 2 is aligned with the center of the pressing plate 6, and the purpose is that the friction force between the substrate slice and the copper plate 3 is more uniform in the copper polishing processing process, the pressing plate 6 can stably rotate, and the possibility that the rotation is uneven due to the inner ring groove 1 or the outer ring groove 2, so that the total thickness change TTV of the processed substrate slice and the removal rate are poor is avoided.

Example 1

In this embodiment, a copper plate with a height of 30cm and an outer diameter of 914mm is selected for processing, the number of grooves on the copper plate is 2, wherein 1 groove is aligned with the outer edge of the pressurizing plate, namely the top surface of the inner ring groove is abutted against the bottom surface of the outer edge of the pressurizing plate, and the other 1 groove is aligned with the center of the pressurizing plate, namely the top surface of the outer ring groove is abutted against the bottom surface center of the pressurizing plate, the pressurizing plate is pasted with 6 pieces of substrate sheets, the pressurizing plate pressure is 98kgf, and diamond slurry with 4-6 um is used. The substrate sheet removal was measured to be 30um, the copper plate rotation speed was 50rpm, and the processing temperature was 35 degrees. The processing result is TTV 3-5 um, the substrate slice removing rate is 0.8um/sec, and the copper disc loss is 0.2mm.

Example 2

In this embodiment, a copper plate with a height of 30cm and an outer diameter of 914mm is selected for processing, the number of grooves on the copper plate is 3, wherein 2 groove positions are respectively abutted between the inner side of the pressurizing plate, namely the top surfaces of 2 grooves and the inner side of the bottom surface of the pressurizing plate, but not through the center of the pressurizing plate, namely the top surfaces of 2 outer ring grooves are all in non-contact with the center of the bottom surface of the pressurizing plate, and 1 groove is positioned on the inner side of the copper plate and is not in non-contact with the top surface of the inner ring groove and the bottom surface of the pressurizing plate, the copper plate is used for processing, the pressurizing plate is pasted with 6 pieces of substrate sheets, the pressure of the pressurizing plate is 98kgf, and diamond slurry with a thickness of 4-6 um is used. The substrate sheet removal was measured to be 30um, the copper plate rotation speed was 50rpm, and the processing temperature was 35 degrees. The processing result is TTV 5-11 um, the substrate slice removing rate is 0.7um/sec, and the copper disc loss is 0.22mm.

Comparative example 1

In the comparative example, copper plates with the height of 30cm and the outer diameter of 914mm are selected for processing, the number of grooves formed in the copper plates is 1, the grooves are abutted against the center of a pressurizing plate through the center of the pressurizing plate, namely the center of the top surface of the grooves and the center of the bottom surface of the pressurizing plate, when the copper plates are processed, 6 pieces of substrate sheets are attached to the pressurizing plate, the pressurizing plate pressure is 98kgf, and diamond slurry with the thickness of 4-6 um is used. The substrate sheet removal was measured to be 30um, the copper plate rotation speed was 50rpm, and the processing temperature was 36 degrees. The processing result is TTV 7-12 um, the substrate slice removing rate is 0.7um/sec, and the copper disc loss is 0.3mm.

Comparative example 2

In the comparative example, a copper plate with the height of 30cm and the outer diameter of 914mm is selected for processing, a groove is not formed on the copper plate, 6 pieces of the substrate slice are pasted on a pressurizing plate, the pressure of the pressurizing plate is 98kgf, and 4-6 um diamond slurry is used. The substrate sheet removal was measured to be 30um, the copper plate rotation speed was 50rpm, and the processing temperature was 36 degrees. The processing result is TTV 5-7 um, the substrate slice removing rate is 0.6um/sec, and the copper disc loss is 0.3mm.

The data set forth in example 1, example 2, comparative example 1 and comparative example 2 are shown in the following table:

according to the above table, the processing result TTV of example 1 was reduced by about 25% to 50%, the substrate sheet removal rate was improved by about 33%, and the copper plate loss was reduced by about 33% as compared with comparative example 2.

Example 2 has a 66% -120% increase in TTV, a 14% decrease in substrate removal rate, and an approximately 1% increase in copper plate loss compared to example 1. The main reason is that the grooves are positioned to make the rotation of the pressing plate unsmooth and the removal amount of the substrate sheet uneven, so that the TTV becomes larger. The inner ring grooves are arranged on the inner side of the copper plate, so that the diamond slurry permeates into the inner ring grooves, and therefore the diamond slurry remained on the copper plate is reduced, and the substrate slice removal rate is reduced.

Compared with comparative example 2, the processing result TTV of comparative example 1 is increased by about 20% -70%, the substrate slice removal rate is increased by 16%, and the copper plate loss is the same. The main reason is that the number of the grooves is insufficient, so that the expansion degree of the copper disc cannot be uniform, and the TTV of the substrate slice is increased.

According to the comparison, the optimal number of grooves is 2, only 1 groove exists, the problem of copper plate expansion cannot be solved, TTV is difficult to control, if the number of grooves exceeds 2, the thinning efficiency of a substrate slice is reduced under the same operation parameter in the copper polishing process, therefore, when the number of grooves is increased to 2, the use efficiency is highest, and meanwhile, the inner ring grooves in the 2 grooves are aligned with the outer edges of the pressurizing plate, and the outer ring grooves are aligned with the centers of the pressurizing plate.

In the description of the present utility model, it should be understood that the terms "longitudinal," "transverse," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate describing the present utility model and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present utility model. In the description of the present utility model, unless otherwise specified and defined, it should be noted that the terms "mounted," "connected," and "coupled" are to be construed broadly, and may be, for example, mechanical or electrical, or may be in communication with each other between two elements, directly or indirectly through intermediaries, as would be understood by those skilled in the art, in view of the specific meaning of the terms described above.

The foregoing description of the preferred embodiments of the utility model is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the utility model.

Claims

1. The silicon carbide grinding copper disc is characterized by comprising a plurality of grooves which are arranged in concentric circles, wherein each groove comprises an inner ring groove and an outer ring groove, and the inner diameter of each inner ring groove is smaller than the inner diameter of each outer ring groove;

the number of the inner ring grooves is 1, and the number of the outer ring grooves is 1;

the bottom of the copper disc is connected with a base, and a pressurizing plate is correspondingly arranged above the copper disc;

the inner ring groove is aligned with the outer edge of the pressurizing plate, and the outer ring groove is aligned with the center of the pressurizing plate.

2. A silicon carbide abrasive copper disc according to claim 1, wherein the copper disc has an outer diameter of 800-1300 mm and a height of 30-50 cm.

3. The silicon carbide abrasive copper disk as claimed in claim 1, wherein the upper surface of the copper disk is provided with spiral or concentric abrasive grooves.

4. The silicon carbide abrasive copper disc as claimed in claim 1, wherein the inner ring groove and the outer ring groove each have a width of 0.5 cm to 2cm and a depth of 30cm to 50cm.