CN218936299U - Low-attenuation semiconductor light-emitting module - Google Patents
Low-attenuation semiconductor light-emitting module Download PDFInfo
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- CN218936299U CN218936299U CN202221626278.6U CN202221626278U CN218936299U CN 218936299 U CN218936299 U CN 218936299U CN 202221626278 U CN202221626278 U CN 202221626278U CN 218936299 U CN218936299 U CN 218936299U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 51
- 230000017525 heat dissipation Effects 0.000 claims abstract description 13
- 230000008878 coupling Effects 0.000 claims description 9
- 238000010168 coupling process Methods 0.000 claims description 9
- 238000005859 coupling reaction Methods 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000000498 cooling water Substances 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 3
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 230000000712 assembly Effects 0.000 abstract 1
- 238000000429 assembly Methods 0.000 abstract 1
- 238000004134 energy conservation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241000883990 Flabellum Species 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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Application Number | Priority Date | Filing Date | Title |
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CN202221626278.6U CN218936299U (en) | 2022-06-27 | 2022-06-27 | Low-attenuation semiconductor light-emitting module |
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CN202221626278.6U CN218936299U (en) | 2022-06-27 | 2022-06-27 | Low-attenuation semiconductor light-emitting module |
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CN218936299U true CN218936299U (en) | 2023-04-28 |
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CN202221626278.6U Active CN218936299U (en) | 2022-06-27 | 2022-06-27 | Low-attenuation semiconductor light-emitting module |
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CN (1) | CN218936299U (en) |
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- 2022-06-27 CN CN202221626278.6U patent/CN218936299U/en active Active
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Legal Events
Date | Code | Title | Description |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240927 Address after: 12 # 01, Jingdong the Taihu Lake Intelligent Manufacturing Industrial Park, No. 7, Longshan South Road, Guangfu Town, Wuzhong District, Suzhou City, Jiangsu Province, 215111 Patentee after: Suzhou Lingrui Bochuang Precision Machinery Technology Co.,Ltd. Country or region after: China Address before: No. 198, Wuzhou East Road, Yangzhou Economic Development Zone, Jiangsu Province 225000 Patentee before: JIANGSU YIFU CONSTRUCTION GROUP Co.,Ltd. Country or region before: China |
|
TR01 | Transfer of patent right |