CN218918002U - Voltage reference circuit for radio frequency amplifier - Google Patents
Voltage reference circuit for radio frequency amplifier Download PDFInfo
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- CN218918002U CN218918002U CN202222575332.5U CN202222575332U CN218918002U CN 218918002 U CN218918002 U CN 218918002U CN 202222575332 U CN202222575332 U CN 202222575332U CN 218918002 U CN218918002 U CN 218918002U
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Abstract
The utility model provides a voltage reference circuit for a radio frequency amplifier, which is connected with the radio frequency amplifier through a linearization circuit; the voltage divider comprises a first voltage divider and a second voltage divider, wherein the first voltage divider is composed of a first resistor and is connected with a base electrode of a bias transistor of the linearization circuit; the second voltage divider is connected to the base of the bias transistor of the linearization circuit, the second voltage divider comprises a second transistor and a third transistor which are connected in a diode mode; the second voltage divider further comprises an adjusting unit which is respectively connected with the second transistor, the third transistor and the linearization circuit, and the adjusting unit can adjust the output current of the bias circuit and is used for compensating the static current of the power amplifier, which changes due to temperature. The voltage reference circuit for the radio frequency amplifier can dynamically adjust the driving current output by the bias circuit to the radio frequency amplifier along with the temperature change, the temperature compensation effect of the bias circuit on the amplifier is improved.
Description
Technical Field
The utility model relates to the field of radio frequency microwaves, in particular to a voltage reference circuit for a radio frequency amplifier.
Background
With the development of wireless communication technology, signal modulation technology is more complex, and higher requirements are put on the linear output power of a power amplifier of a core device in a transmitter.
In a conventional radio frequency amplifier system, as the input power increases, a power tube is in a large-signal working state, and as the input power increases, the voltage between the base emitters of the power tube decreases, so that amplitude modulation, phase modulation and distortion are caused, and linearity decreases due to the existence of a nonlinear capacitor and PN junction (diode) rectifying effect. Meanwhile, the temperature change can also cause the current of the base electrode and the collector electrode of the power tube to change, the current gain also decreases along with the temperature rise, and the PN junction opening voltage decreases when the temperature rises, so that the static working point of the power tube is changed, and the output performance of the power amplifier is deteriorated.
In response to the above problems, it is common to configure bias circuits for rf amplifier systems to compensate for performance degradation caused by temperature changes and increases in input power, thereby increasing the linear output power of the power amplifier.
Fig. 1 is a schematic diagram of a prior art bias circuit connected to a rf amplifier. The whole bias circuit consists of a linearization circuit and a voltage reference circuit.
The linearization circuit is composed of a transistor HBT1, a capacitor C1, a resistor R1 and a resistor Rb. The transistor HBT1 has the same characteristics as the transistor HBT0 of the radio frequency amplifier for compensating the base-emitter voltage drop of the transistor HBT0 as a power transistor due to the increase of the input power. Resistor Rb and capacitor C1 are used to regulate the amount of RF signal that enters the bias circuit.
As shown in fig. 1: when the amplifier works, as the input signal RFin increases, the linearity of the amplifier gradually decreases along with the change of the working state of the transistor HBT0, and additional compensation current is needed to be provided for improving the linearity of the circuit through the bias circuit, because the transistor HBT1 and the capacitor C1, radio frequency signals flow into the bias circuit through the resistor R1, then because of the rectifying action of the base-emitter diode of the transistor HBT1, the radio frequency signals after rectification are converted into direct current signals and flow into the transistor HBT0, compensation is provided for the circuit, and the linearity of the circuit is improved.
The voltage reference circuit is composed of two voltage dividers for stably controlling the base voltage of the transistor HBT1, thereby adjusting the emitter drive current of the transistor HBT 1. In addition, a voltage reference circuit (bias circuit) which is now commonly used is shown in fig. 2.
As shown in fig. 2, the voltage reference circuit is composed of two diodes HBT2, HBT3 (transistor base-collector connection) and a resistor R2. The resistor R2 is a variable voltage divider and is used for controlling the base potential of the transistor HBT1 and adjusting the resistance value of the resistor R2 so as to adjust the driving current output by the bias circuit.
In fig. 2 described above, the emitter current of transistor HBT1 is used to drive power transistor HBT0, and the operating state of transistor HBT1 is controlled by its base voltage Vbe 1. The bias circuit driving current formula is:
Ib＝I e1 ＝I b1 +I c1 ≈I b1 (1+β)
ib1 is determined by a voltage reference circuit. The diode and the resistor R2 form a voltage reference circuit, and the voltage reference circuit is adjusted to control the voltage and the current of the base electrode of the transistor HBT1, so that the output current of the bias circuit is controlled.
The resistor R2 and the two diodes are positioned in the voltage V2 branch circuit, and the series connection structure divides the voltage mutually. The base of HBT1 is located on the voltage division node of R2 and two diodes in series, and the base voltage Vbe1 of HBT1 is the same as the voltage division potential of the two diodes. From kirchhoff's voltage-current law:
V be1 ＝2V Diode ＝V 2 -R 2 *I 2
I 2 ＝I 3 +I 4
V be1 ＝2V Diode ＝V 2 -R 2 *(I 3 +I 4 )
v2 is the external input voltage is a fixed value because current I3 is much larger than current I4. And the current I3 is determined by the diode die area, the voltage Vbe1 is determined by the resistance value of the resistor R2 and the diode die area (base diode constituted by transistors). The overall bias current adjusts the R2 value and die area (transistor-formed base diode) to control the bias output current.
Because of objective restrictions on the process of the chip production foundry, the area of the transistor die cannot be modified as desired, and there are great restrictions on the design. In the case of die area determination, the output current is controlled by means of resistor R2 alone, and the regulation accuracy is greatly compromised. Meanwhile, the temperature compensation effect of the bias circuit also can change greatly along with the change of the resistance value of the resistor R2.
In addition: the temperature rise causes the base current Ib0 of the transistor HBT0 and the emitter current Ie1 of the transistor HBT1 to rise (temperature drop, opposite effect). The negative feedback device for inhibiting the current change on the current Ib branch is a ballast resistor Rb, the branch current Ib rises, the voltage drop on the resistor Rb rises, the Vce voltage of the transistor HBT0 decreases, and the branch current Ib decreases. And the larger the resistance value of Rb, the better the negative feedback inhibition effect. However, the resistance value of the resistor Rb also participates in adjusting the driving current of the bias circuit and is inversely related; in addition, in the linearization circuit, the resistor Rb plays a role in adjusting the magnitude of the coupled radio frequency signal, and cannot be infinitely increased.
The current I2 branch has the temperature negative feedback effect of a resistor R2. Specifically, the base current Ib1 (I4) of the transistor HBT1 increases with an increase in temperature, and the diode-leg current I3 also increases with an increase in temperature, resulting in an increase in the leg current I2, an increase in the voltage across the resistor R2, a decrease in the diode-reference voltage, a decrease in the bias voltage Vbe1 of the transistor HBT1, a decrease in the current Ie2, and a decrease in the leg current Ib. And the higher the value of the resistor R2 is, the better the negative feedback inhibition effect is. Because the resistor R2 participates in controlling the output current of the bias circuit, and the resistance value and the current magnitude are in negative correlation, the compromise between the resistance value and the current magnitude can lead to poor temperature compensation effect, and particularly the compensation effect is extremely poor under the condition of outputting large current.
In summary, the temperature compensation effect of the voltage reference circuit is poor, and especially the compensation effect is very bad under the condition that the power tube HBT0 outputs a large current.
Accordingly, there is a need to provide an improved voltage reference circuit for a radio frequency amplifier that overcomes the above-described drawbacks.
Disclosure of Invention
The utility model aims to provide a voltage reference circuit for a radio frequency amplifier, which can dynamically adjust the driving current output by a bias circuit to the radio frequency amplifier, thereby improving the temperature compensation effect of the bias circuit on the amplifier.
In order to achieve the above object, the present utility model provides a voltage reference circuit for a radio frequency amplifier, the voltage reference circuit is connected with the radio frequency amplifier through a linearization circuit, and the voltage reference circuit and the linearization circuit form a bias circuit of the radio frequency amplifier so as to provide bias current for the radio frequency amplifier; the voltage divider comprises a first voltage divider and a second voltage divider, wherein the first voltage divider is composed of a first resistor and is connected with the base electrode of a bias transistor of the linearization circuit so as to regulate and control the base injection junction voltage of the bias transistor; the second voltage divider is connected with the base electrode of the bias transistor of the linearization circuit to provide a reference voltage of a base-emitter junction for the bias transistor, and comprises a second transistor and a third transistor which are connected in a diode manner; the second voltage divider further comprises an adjusting unit which is respectively connected with the second transistor, the third transistor and the linearization circuit, and the adjusting unit can adjust the output current of the bias circuit to compensate the static current of the power amplifier, which changes due to temperature.
Preferably, the adjusting unit includes a second resistor and a fourth transistor, the fourth transistor is connected in series with the second transistor and the third transistor, and the second resistor is connected in parallel with the diode-connected second transistor.
Preferably, the collector of the fourth transistor is connected to the emitter of the second transistor, the emitter thereof is connected to the collector of the third transistor, one end of the second resistor is connected to the linearization circuit, and the other end thereof is connected to the base of the fourth transistor.
Preferably, the fourth transistor is placed adjacent to the rf amplifier to obtain the temperature change of the rf amplifier in real time.
Preferably, the second transistor and the third transistor are disposed adjacent to the rf amplifier to obtain the temperature change of the rf amplifier in real time.
Preferably, the resistance of the second resistor is much smaller than the equivalent resistance of the diode-connected second transistor.
Preferably, the current flowing through the second resistor is much larger than the current flowing through the diode-connected second transistor.
Compared with the prior art, the voltage reference circuit for the radio frequency amplifier can control the magnitude of current flowing through the adjusting unit by adjusting the resistance value of the adjusting unit in the design process through the adjusting unit added on the second voltage divider, and further control the base voltage of the bias transistor, so that the purpose of adjusting the output current of the bias circuit is achieved, the compensation of the quiescent current of the power transistor of the amplifier is realized, and the temperature compensation effect of the bias circuit on the radio frequency amplifier is improved.
The utility model will become more apparent from the following description taken in conjunction with the accompanying drawings which illustrate embodiments of the utility model.
Drawings
Fig. 1 is a block diagram of a prior art bias circuit coupled to a radio frequency amplifier.
Fig. 2 is a schematic diagram of a prior art bias circuit connected to a rf amplifier.
Fig. 3 is a block diagram of a voltage reference circuit of the present utility model connected to a radio frequency amplifier.
Fig. 4 is a schematic diagram of a connection between a voltage reference circuit and a radio frequency amplifier according to the present utility model.
Fig. 5 is a graph of a simulated comparison of the output current of a power amplifier according to an aspect of the present utility model with the output current of a power amplifier according to a prior art aspect.
Detailed Description
Embodiments of the present utility model will now be described with reference to the drawings, wherein like reference numerals represent like elements throughout. As described above, the voltage reference circuit for the radio frequency amplifier can dynamically adjust the driving current output by the bias circuit to the radio frequency amplifier, thereby improving the temperature compensation effect of the bias circuit on the radio frequency amplifier.
Referring to fig. 3, fig. 3 is a block diagram illustrating a connection between a voltage reference circuit and a radio frequency amplifier according to the present utility model. As shown in the figure, the voltage reference circuit of the present utility model is connected to the radio frequency amplifier through the linearization circuit, and the voltage reference circuit and the linearization circuit form a bias circuit of the radio frequency amplifier to provide bias current Ib for the radio frequency amplifier. The linearization circuit comprises a divider resistor Ra, a ballast resistor Rb, a bias transistor HBT1 and a capacitor C1, wherein one end of the divider resistor Ra is connected with an external power supply V1, the other end of the divider resistor Ra is connected with a collector of the bias transistor HBT1, an emitter of the bias transistor HBT1 is connected with one end of the ballast resistor Rb, the other end of the ballast resistor Rb is connected with a base of a power transistor HBT0 of the radio frequency amplifier, bias current Ib is input to the power transistor HBT0, a base of the bias transistor HBT1 is connected with one end of the capacitor C1 and a voltage reference circuit, and the other end of the capacitor C1 is grounded.
In the linearization circuit, when the rf amplifier is in operation, as the input signal RFin increases, the base potential Vbe0 of the power transistor HBT0 decreases, linearity gradually decreases with the change of the operating state of the power transistor HBT0, and the linearization circuit is required to compensate for the decrease of the voltage. Meanwhile, bias current needs to be increased along with the increase of power, so that collector current is increased; the impedance of the voltage reference circuit on the left side of the node Vbe1 is far higher than the impedance of the capacitor C1 at the radio frequency, all radio frequency signals at the node Vbe1 flow to the capacitor C1, and the value of the capacitor C1 is controlled, so that the radio frequency signal quantity flowing to the voltage reference circuit can be controlled. Meanwhile, the ballast resistor Rb is positioned on the coupling radio frequency signal branch, and the resistance of the ballast resistor Rb can also control the radio frequency signal quantity flowing to the voltage reference circuit; due to the rectification effect of the base emitter diode of the bias transistor HBT1, the radio frequency signal after rectification is converted into a direct current signal and flows into the base circuit of the power transistor HBT0, the output bias current Ib is improved, and meanwhile, the voltage division on the ballast resistor Rb is improved, so that the base emitter voltage of the bias transistor HBT1 is reduced, and the base bias voltage drop of the power transistor HBT0 is compensated; therefore, the linearization circuit provides voltage compensation for the radio frequency amplifying electric appliance, so that the linearity of the circuit is improved.
The voltage reference circuit is used for controlling the base potential of the bias transistor HBT1 and regulating the output current Ib of the bias circuit so as to control the output current ICC of the power transistor HBT0, and has a temperature compensation negative feedback effect and inhibits the change of the output current of the power transistor HBT0 along with the temperature value. The voltage reference circuit comprises a first voltage divider and a second voltage divider, wherein the first voltage divider is formed by a first resistor R1 and is connected with a base electrode of a bias transistor HBT1 of the linearization circuit, and can dynamically adjust and control the base-emitter junction voltage of the bias transistor HBT1 according to the induction current of the second voltage divider for sensing the temperature change of the power tube, so that the voltage reference circuit has a temperature compensation negative feedback function; the second voltage divider is connected with the base electrode of the bias transistor HBT1 of the linearization circuit so as to provide a reference voltage of a base-emitter junction for the bias transistor HBT 1; in addition, in the utility model, the second voltage divider is placed at a position adjacent to the radio frequency amplifier (power transistor HBT 0) to acquire the temperature change condition of the power transistor HBT0 in real time, and dynamically adjusts the base-emitter junction voltage of the bias transistor HBT1 in cooperation with the first voltage divider to realize temperature compensation of the power transistor HBT 0; the proximity of the present utility model means that the second voltage divider is as close to the power transistor HBT0 as possible on the premise of meeting basic requirements of circuit design and layout, so that information of temperature change of the second voltage divider can be obtained more accurately. In the present utility model, the second voltage divider comprises a second transistor HBT2, a third transistor HBT3 connected in a diode manner; the diode-connected transistor means that the base and the collector of the transistor are connected, as shown in fig. 4.
Specifically, the second voltage divider further includes an adjusting unit, where the adjusting unit is connected to the second transistor HBT2, the third transistor HBT3, and the linearization circuit, respectively; specifically, one end of the first resistor R1 is connected to another external power source V2, the other end is connected to the collector of the second transistor HBT2, the collector of the second transistor HBT2 is connected to the base thereof and to the base of the bias transistor HBT1, the emitter thereof is connected to the adjustment unit, the collector of the third transistor HBT3 is connected to the base thereof and to the adjustment unit, and the emitter thereof is grounded. In the utility model, the regulating unit can regulate the magnitude of the output current of the bias circuit to compensate the static current of the power amplifier which changes due to temperature, and simultaneously, the temperature sensing capability of the second voltage divider is enhanced, and the temperature compensation negative feedback effect of the first voltage divider is also enhanced.
Specifically, referring to fig. 4 in combination, fig. 4 is a schematic structural diagram of the connection between the voltage reference circuit and the rf amplifier according to the present utility model. As shown, the regulating unit comprises a second resistor R2 and a fourth transistor HBT4, the fourth transistor HBT4 is connected in series with the second transistor HBT2 and the third transistor HBT3, and the second resistor R2 is connected in parallel with the diode-connected second transistor HBT 2; further, the collector of the fourth transistor HBT4 is connected to the emitter of the second transistor HBT2, the emitter thereof is connected to the collector of the third transistor HBT3, one end of the second resistor R2 is connected to the linearization circuit, and the other end thereof is connected to the base of the fourth transistor HBT 4; as a preferred embodiment of the present utility model, the fourth transistor HBT4 is placed adjacent to the radio frequency amplifier (power transistor HBT 0) to obtain the temperature change condition of the power transistor HBT0 in real time, and in the present utility model, the fourth transistor HBT4 is the same as the power transistor HBT0 in type and size, so that the temperature change characteristic is the same as the power transistor HBT0, and compared with the conventional diode scheme, the present utility model has better temperature sensing capability and enhances the temperature sensing capability of the second voltage divider.
The working principle of the adjusting unit in the utility model is as follows:
the voltage of the node Vbe1 is determined by a third transistor HBT3 to which the regulating unit is diode-connected. The kirchhoff voltage-current theorem is available:
V2＝R1*I2+V Diode2 +Vce4+V Diode3
Vbe1＝V Diode2 +Vce4+V Diode3 ＝V2-R1*I2
I2＝I3+I4+I5
Vbe1＝V2-R1*(I3+I4+I5)
wherein V is Diode2 And V is equal to Diode3 The second transistor HBT2 and the third transistor HBT3 are respectively used as fixed voltage drops of diodes, and Vce4 is the voltage between the collector-emitter junctions of the fourth transistor.
In the present utility model, the parallel branch of the second transistor HBT2 in the manner of connecting the second resistor R2 and the diode is mainly constructed by using the kirchhoff current characteristic (ie=ib+ic) of the transistor stability, that is, the second resistor R2 and the second transistor HBT2 form a parallel structure. In addition, the resistance of the second resistor R2 is far smaller than the resistance of the diode (the second transistor HBT 2), so the current I3 on the branch where the second resistor R2 is located is far greater than the current I4 on the branch where the diode is located, and is also far greater than the base current I5 of the bias transistor HBT1, namely:
I3＞＞I4＞＞I5；
since I2 is equal to the sum of I3, I4, and I5, and I3 > I4 > I5, current I3 determines the value of current I2.
Again because:
V Diode2 +Vce4＝R2*I3+Vbe4，
I3＝(V Diode2 +Vce4-Vbe4)/R2；
when the temperature is fixed, the voltages are constant, and the current I3 decreases as the resistance of the second resistor R2 increases.
By the above overall analysis: the resistance of the second resistor R2 increases, resulting in a decrease in the current I3 and a decrease in the current I2, resulting in a decrease in the voltage drop across the first resistor R1, and thus an increase in the voltage Vbe1, and an increase in the emitter output current Ib of the bias transistor HBT 1.
In the utility model, the magnitude of the output current Ib of the bias circuit is regulated by regulating the resistance value of the second resistor R2, so that the resistance value of the first resistor R1 of the first voltage divider is released, the resistance value can reach kiloohm level, and the temperature negative feedback capacity of the first voltage divider is enhanced.
Referring to fig. 5 in combination, the temperature compensation principle of the voltage reference circuit for the radio frequency amplifier according to the present utility model will be described:
the power transistor HBT0 increases in temperature and the base current Ib increases due to ambient temperature variations or self-heating effects. At this time, the temperature of the fourth transistor HBT4 as a temperature sensor and the temperature of the two diodes (the second transistor HBT2 and the third transistor HBT 3) as a temperature sensor, which are placed near the power transistor HBT0, rise, and the currents I3 and I4 on the respective branches increase, so that the current I2 on the first resistor R1 increases, the voltage drop on the first resistor R1 increases, the base potential Vbe1 of the bias transistor HBT1 decreases, and the bias current Ib decreases.
Namely, the method comprises the following steps: when the temperature T rises, the bias current Ib rises;
meanwhile, when the temperature T rises, the current i3+i4 rises, the current I2 rises, the voltage Vbe1 falls, and the bias current Ib falls.
Thereby realizing temperature compensation of the bias current Ib.
Compared with the traditional scheme, the resistance value of the first resistor R1 can be adjusted arbitrarily due to the adjusting unit, so that the temperature compensation effect of the whole bias circuit is optimal.
On the premise that the area of the die of the bias circuit is consistent with that of the existing bias circuit, the output current is regulated to be about 260mA by regulating the current regulating structures, and the curve of the simulated current ICC along with the temperature change is shown in FIG. 5; as shown in the figure, the temperature is changed from-40 ℃ to 140 ℃, the simulation result shows that the bias circuit of the existing structure has monotonically increased current ICC along with the temperature rise, the lowest current is 231mA, the highest current is 304mA, the change difference is 73mA, and the current ICC is extremely unstable along with the temperature change; the current ICC curve of the bias circuit structure is basically flat, the lowest current is 263mA, the highest current is 275mA, and the variation difference is only 12mA; in fig. 5, the solid line is the current curve of the scheme of the present utility model, and the dotted line is the current curve of the prior art scheme.
Compared with two simulation data, the voltage reference circuit provided by the utility model has a better temperature compensation effect in the radio frequency amplifier.
The utility model has been described in connection with the preferred embodiments, but the utility model is not limited to the embodiments disclosed above, but it is intended to cover various modifications, equivalent combinations according to the essence of the utility model.
Claims (7)
1. A voltage reference circuit for a radio frequency amplifier, the voltage reference circuit being connected to the radio frequency amplifier by a linearization circuit, the voltage reference circuit and linearization circuit forming a bias circuit of the radio frequency amplifier to provide a bias current for the radio frequency amplifier; the voltage divider comprises a first voltage divider and a second voltage divider, wherein the first voltage divider is composed of a first resistor and is connected with the base electrode of a bias transistor of the linearization circuit so as to regulate and control the base injection junction voltage of the bias transistor; the second voltage divider is connected with the base electrode of the bias transistor of the linearization circuit to provide a reference voltage of a base-emitter junction for the bias transistor, and comprises a second transistor and a third transistor which are connected in a diode manner; the second voltage divider is characterized by further comprising an adjusting unit which is respectively connected with the second transistor, the third transistor and the linearization circuit, and the adjusting unit can adjust the output current of the bias circuit so as to compensate the static current of the power amplifier, which changes due to temperature.
2. The voltage reference circuit for a radio frequency amplifier according to claim 1, wherein the regulating unit comprises a second resistor and a fourth transistor, the fourth transistor being connected in series with the second transistor, the third transistor, the second resistor being connected in parallel with the diode-connected second transistor.
3. The voltage reference circuit for a radio frequency amplifier according to claim 2, wherein a collector of the fourth transistor is connected to an emitter of the second transistor, an emitter thereof is connected to a collector of the third transistor, one end of a second resistor is connected to the linearization circuit, and the other end thereof is connected to a base of the fourth transistor.
4. A voltage reference circuit for a radio frequency amplifier as claimed in claim 3, wherein the fourth transistor is placed adjacent to the radio frequency amplifier to obtain the temperature change of the radio frequency amplifier in real time.
5. The voltage reference circuit for a radio frequency amplifier of claim 4, wherein the second transistor, third transistor are positioned adjacent to the radio frequency amplifier to obtain the temperature change of the radio frequency amplifier in real time.
6. A voltage reference circuit for a radio frequency amplifier as claimed in claim 3, wherein the second resistor has a value substantially less than the equivalent value of the diode-connected second transistor.
7. The voltage reference circuit for a radio frequency amplifier of claim 6, wherein the current flowing across the second resistor is substantially greater than the current flowing across the diode-connected second transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222575332.5U CN218918002U (en) | 2022-09-28 | 2022-09-28 | Voltage reference circuit for radio frequency amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222575332.5U CN218918002U (en) | 2022-09-28 | 2022-09-28 | Voltage reference circuit for radio frequency amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218918002U true CN218918002U (en) | 2023-04-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222575332.5U Active CN218918002U (en) | 2022-09-28 | 2022-09-28 | Voltage reference circuit for radio frequency amplifier |
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| Country | Link |
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| CN (1) | CN218918002U (en) |
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- 2022-09-28 CN CN202222575332.5U patent/CN218918002U/en active Active
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