CN218851228U - Perovskite silicon heterojunction tandem solar cell structure - Google Patents
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 48
- 239000010703 silicon Substances 0.000 title claims abstract description 48
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- 239000010409 thin film Substances 0.000 claims abstract description 61
- 239000010408 film Substances 0.000 claims abstract description 50
- 230000005525 hole transport Effects 0.000 claims abstract description 20
- 238000010521 absorption reaction Methods 0.000 claims abstract description 18
- 230000005641 tunneling Effects 0.000 claims abstract description 13
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 19
- 229910005855 NiOx Inorganic materials 0.000 abstract description 14
- 238000000231 atomic layer deposition Methods 0.000 abstract description 14
- 238000000151 deposition Methods 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
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- BMGNSKKZFQMGDH-FDGPNNRMSA-L nickel(2+);(z)-4-oxopent-2-en-2-olate Chemical compound [Ni+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O BMGNSKKZFQMGDH-FDGPNNRMSA-L 0.000 description 5
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- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 2
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- XRIBIDPMFSLGFS-UHFFFAOYSA-N 2-(dimethylamino)-2-methylpropan-1-ol Chemical compound CN(C)C(C)(C)CO XRIBIDPMFSLGFS-UHFFFAOYSA-N 0.000 description 1
- 241000282414 Homo sapiens Species 0.000 description 1
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- WTEWXIOJLNVYBZ-UHFFFAOYSA-N n-[4-[4-(4-ethenyl-n-naphthalen-1-ylanilino)phenyl]phenyl]-n-(4-ethenylphenyl)naphthalen-1-amine Chemical compound C1=CC(C=C)=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC(C=C)=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 WTEWXIOJLNVYBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The utility model relates to a perovskite silicon heterojunction tandem solar cell structure, it includes the top battery of upper portion, the bottom battery of lower part and the tunnel layer between top battery and the bottom battery, and the bottom battery includes the double faced fine hair silicon chip, and the top battery includes perovskite film absorbing layer; a first intrinsic layer, a sixth intrinsic layer and a first ITO film are sequentially arranged below the double-sided velvet silicon wafer, and a second intrinsic layer, a second ITO film and a perovskite film absorption layer are sequentially arranged between the double-sided velvet silicon wafer and the perovskite film absorption layer from bottom to top,The third intrinsic layer, the fourth intrinsic layer and the fifth intrinsic layer form a tunneling layer; a hole transport layer is arranged above the fifth intrinsic layer of the tunneling layer; a LiF thin film, a C60 thin film and SnO are sequentially arranged above the perovskite thin film absorption layer from bottom to top 2 A film and a second ITO film. The utility model discloses an use atomic layer deposition method deposit NiOx film mode to reduce perovskite battery local performance difference, eliminate the structure incompleteness, improve stack voltage.
Description
Technical Field
The utility model relates to a matte stromatolite solar cell technical field especially relates to a perovskite silicon heterojunction stromatolite solar cell structure.
Background
Solar energy is a renewable clean energy source and has important significance for the sustainable development of human beings. The solar cell converts solar energy into electric energy, and the conversion efficiency, the material and the manufacturing cost of the solar cell are key factors for determining the industrial application, the flat price and the final goal of energy source replacement. Currently, silicon-based solar cells occupy more than 95% of the market, but the conversion efficiency is increasingly difficult to improve continuously, and the manufacturing cost is increasingly high. Perovskite solar cells are the fastest growing solar cell technology in recent years, and the efficiency of the perovskite solar cells is increased from the first 3.8% to the current 25.7%. The perovskite has the characteristics of adjustable forbidden band width, simple preparation process, low cost and the like.
The prior art has the following problems:
the silicon heterojunction solar cell has the advantages of simple process, low temperature, low manufacturing energy consumption, and over 26 percent of conversion efficiency of single junction with small area; particularly, the double-textured surface has the structural advantages of reducing the reflection of incident light and increasing the effective optical path of the incident light in the cell absorption layer, and is the basis for reducing the thickness of the cell absorption layer and reducing the production cost.
At present, in the manufacture of a perovskite/silicon heterojunction tandem solar cell, due to the convex-concave surface of a textured surface, the perovskite cell of the top cell has large local difference in performance and even has an incomplete structure, and further voltage parasitic loss or ineffective superposition is generated. Therefore, shape-preserving deposition on textured surfaces is critical to construct inverted perovskite-top cell structures, particularly hole transport layers in direct contact with the tunneling layer.
At present, the hole transport layer material based on the inverted perovskite structure and the manufacturing method mainly comprise small molecular materials Sprio-OMeTAD, TTB, TAD and the like, cross-linked small molecular materials VNPB and the like, polymer materials PEDOT-PSS, PTAA and the like, inorganic NiOx, cuOx, cuI, moOx and the like, and adopt plane manufacturing technologies such as evaporation, spraying, spin coating, magnetron sputtering processes and the like. However, the transfer to the textured surface highlights the technical disadvantages as described previously.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to overcome above-mentioned not enough, provide a perovskite silicon heterojunction tandem solar cell structure, through using atomic layer deposition method deposit NiOx film mode to reduce perovskite battery local performance difference, eliminate the structure incompleteness, improve stack voltage.
The purpose of the utility model is realized like this:
a perovskite silicon heterojunction tandem solar cell structure comprises a top cell at the upper part, a bottom cell at the lower part and a tunneling layer between the top cell and the bottom cell, wherein the bottom cell comprises a double-sided silicon wafer, and the top cell comprises a perovskite thin film absorption layer; a first intrinsic layer, a sixth intrinsic layer and a first ITO film are sequentially arranged below the double-sided silicon wafer, and a second intrinsic layer, a third intrinsic layer, a fourth intrinsic layer and a fifth intrinsic layer are sequentially arranged between the double-sided silicon wafer and the perovskite film absorption layer from bottom to top to form a tunneling layer; a hole transport layer is arranged above the fifth intrinsic layer of the tunneling layer; a LiF film, a C60 film and SnO are sequentially arranged above the perovskite film absorption layer from bottom to top 2 A film and a second ITO film, the LiF film, the C60 film and the SnO 2 The thin film forms an electron transport layer.
Furthermore, a plurality of second electrodes are arranged on the outer side of the first ITO film, and a plurality of first electrodes are arranged on the outer side of the second ITO film.
Furthermore, the first intrinsic layer is an intrinsic amorphous silicon thin film, the second intrinsic layer is an intrinsic amorphous silicon thin film, the third intrinsic layer is an N-type microcrystalline silicon-oxygen thin film, the fourth intrinsic layer is a heavily-doped N-type nanocrystalline silicon-oxygen thin film, the fifth intrinsic layer is a heavily-doped P-type nanocrystalline silicon-oxygen thin film, and the sixth intrinsic layer is a P-type microcrystalline silicon-oxygen thin film.
Further, the thickness of the first intrinsic layer is 3nm, the thickness of the second intrinsic layer is 3nm, the thickness of the third intrinsic layer is 5nm, the thickness of the fourth intrinsic layer is 2nm, the thickness of the fifth intrinsic layer is 2nm, and the thickness of the sixth intrinsic layer is 5nm.
Compared with the prior art, the beneficial effects of the utility model are that:
the utility model discloses perovskite silicon heterojunction tandem solar cell structure includes that silicon heterojunction bottom battery, silicon heterojunction battery go up and form the tunneling layer, pile texture tunnel layer go up atomic layer deposit hole transport layer to make to form the controllable hole transport layer of atomic level fine structure on having pile texture's the tunneling layer, with this inversion perovskite roof battery that pile texture's hole transport layer constitutes; the method for depositing the NiOx film by using the atomic layer deposition method reduces the local performance difference of the perovskite battery, eliminates the incomplete structure and improves the superposed voltage.
Drawings
Fig. 1 is a schematic structural diagram of a perovskite silicon heterojunction tandem solar cell structure of the present invention.
Wherein:
the double-sided silicon wafer comprises a double-sided silicon wafer 0, a first intrinsic layer 1, a second intrinsic layer 2, a third intrinsic layer 3, a fourth intrinsic layer 4, a fifth intrinsic layer 5, a sixth intrinsic layer 6, a first ITO thin film 7, a hole transport layer 8, a perovskite thin film absorption layer 9, a LiF thin film 10, a C60 thin film 11, snO 2 A film 12, a second ITO film 13, a first electrode 14, and a second electrode 15.
Detailed Description
Example 1:
referring to fig. 1, the utility model relates to a perovskite silicon heterojunction tandem solar cell structure, it includes the top battery on upper portion, the end battery of lower part and the tunnel layer between top battery and the end battery, and the end battery includes two-sided fine hair silicon chip 0, and the top battery includes perovskite film absorbed layer 9.
A first intrinsic layer 1, a sixth intrinsic layer 6 and a first ITO thin film 7 are sequentially arranged below the double-sided silicon wafer 0, and a plurality of second electrodes 15 are arranged on the outer side of the first ITO thin film 7.
A second intrinsic layer 2, a third intrinsic layer 3, a fourth intrinsic layer 4 and a fifth intrinsic layer 5 are sequentially arranged between the double-sided silicon wafer 0 and the perovskite thin film absorption layer 9 from bottom to top to form a tunneling layer; and a hole transport layer 8 is arranged above the fifth intrinsic layer 5 of the tunneling layer by adopting atomic layer deposition.
A LiF thin film 10, a C60 thin film 11 and SnO are sequentially arranged above the perovskite thin film absorption layer 9 from bottom to top 2 A thin film 12 and a second ITO thin film 13, the LiF thin film 10, the C60 thin film 11, and SnO 2 The film 12 forms an Electron Transport Layer (ETL), and a plurality of first electrodes 14 are disposed on the outer side of the second ITO film 13.
The first intrinsic layer 1 is a 3nm intrinsic amorphous silicon thin film, the second intrinsic layer 2 is a 3nm intrinsic amorphous silicon thin film, the third intrinsic layer 3 is a 5nm N-type microcrystalline silicon-oxygen thin film, the fourth intrinsic layer 4 is a 2nm heavily-doped N-type nanocrystalline silicon-oxygen thin film, the fifth intrinsic layer 5 is a 2nm heavily-doped P-type nanocrystalline silicon-oxygen thin film, and the sixth intrinsic layer 6 is a 5nm P-type microcrystalline silicon-oxygen thin film.
Referring to fig. 1, the present invention relates to a method for preparing a perovskite silicon heterojunction tandem solar cell structure, which comprises the following steps:
firstly, preparing a double-sided silicon wafer;
preparing a double-sided silicon wafer by adopting a Czochralski single crystal G1N type silicon wafer, wherein the resistivity is about 3 omega-cm, and the thickness is about 110 mu m; forming a pyramid suede with the characteristics of about 3 micrometers on the front side and the back side of the silicon wafer after flocking and cleaning processes are adopted;
secondly, coating an amorphous silicon intrinsic layer;
sequentially depositing a first intrinsic layer on the back, a second intrinsic layer on the front, a third intrinsic layer, a fourth intrinsic layer, a fifth intrinsic layer and a sixth intrinsic layer on the back on the front and the back of the double-sided velvet silicon wafer by adopting a plasma chemical vapor deposition method; the first intrinsic layer is a 3nm intrinsic amorphous silicon thin film, the second intrinsic layer is a 3nm intrinsic amorphous silicon thin film, the third intrinsic layer is a 5nm N-type microcrystalline silicon-oxygen thin film, the fourth intrinsic layer is a 2nm heavily-doped N-type nanocrystalline silicon-oxygen thin film, the fifth intrinsic layer is a 2nm heavily-doped P-type nanocrystalline silicon-oxygen thin film, and the sixth intrinsic layer is a 5nm P-type microcrystalline silicon-oxygen thin film;
thirdly, preparing a first ITO film on the back of the double-sided silicon wafer;
depositing a first ITO film with the thickness of about 120nm on the outer side of a sixth intrinsic layer on the back of the double-sided silicon wafer by adopting a magnetron sputtering method;
fourthly, preparing a hole transport layer;
depositing a NiOx film with the thickness of about 10nm on the outer side of the fifth intrinsic layer on the front surface of the double-sided silicon wafer by adopting a magnetron sputtering method to be used as a Hole Transport Layer (HTL);
fifthly, preparing a perovskite thin film absorption layer;
depositing a PbI/CsBr porous film with the thickness of about 200nm above the hole transport layer by adopting a co-evaporation method, spin-coating a mixed solution containing FAI/FABr/MACl/IPA with a certain proportion, baking at 160 ℃ to form a perovskite film absorption layer with the thickness of about 300nm, wherein the forbidden bandwidth of the perovskite film absorption layer is about 1.61eV;
sixthly, preparing an electron transport layer;
depositing a LiF thin film with the thickness of about 10nm, a C60 thin film with the thickness of about 20nm and SnO with the thickness of about 10nm by an atomic layer deposition method respectively above the perovskite thin film absorption layer 2 Thin film, liF thin film, C60 thin film and SnO 2 The thin film constitutes an Electron Transport Layer (ETL);
seventhly, preparing a second ITO film on the front side of the double-sided velvet silicon wafer;
depositing a second ITO film with the thickness of about 120nm by adopting a magnetron sputtering method;
eighthly, preparing electrodes on the front surface and the back surface of the double-sided silicon wafer;
screen printing a plurality of Ag grid line electrodes on the outer sides of the first ITO film and the second ITO film respectively;
ninthly, measuring the superposed open-circuit voltage of the battery;
with the photocurrent maintained at 4.5A, an open circuit voltage of 1.793V was measured.
Example 2:
the difference between the perovskite silicon heterojunction tandem solar cell structure related to the embodiment 2 and the embodiment 1 is that, in the fourth step, a hole transport layer is prepared: depositing an a-NiOx film with the thickness of about 6nm on the outer side of a fifth intrinsic layer on the front surface of the double-sided silicon wafer by adopting an atomic layer deposition method to serve as a Hole Transport Layer (HTL); ninth, battery superposition open-circuit voltage measurement: with the photocurrent maintained at 4.5A, an open circuit voltage of 1.855V was measured.
Example 3:
the difference between the perovskite silicon heterojunction tandem solar cell structure related to the embodiment 3 and the embodiment 1 is that, in the fourth step, a hole transport layer is prepared: depositing an a-NiOx film with the thickness of about 4nm on the outer side of a fifth intrinsic layer on the front surface of the double-sided silicon wafer by adopting an atomic layer deposition method to serve as a Hole Transport Layer (HTL); ninth, battery superposition open-circuit voltage measurement: with the photocurrent maintained at 4.5A, an open circuit voltage of 1.867V was measured.
Example 4:
the perovskite silicon heterojunction tandem solar cell structure related to the embodiment 4 comprises the following steps: in a fourth step, a hole transport layer was prepared, which is different from example 1: depositing a b-NiOx film with the thickness of about 4nm on the outer side of the fifth intrinsic layer on the front surface of the double-sided silicon wafer by adopting an atomic layer deposition method to serve as a Hole Transport Layer (HTL); ninth, battery superposition open-circuit voltage measurement: with the photocurrent maintained at 4.5A, an open circuit voltage of 1.86V was measured.
The following are data comparison tables of open circuit voltages for the four examples described above:
| embodiment one (comparison case) | Example II | Example three | Example four | |
| Open circuit voltage | 1.793V | 1.855V | 1.867V | 1.86V |
Therefore, the utility model discloses the voltage stack loss of battery structure reduces.
The working principle is as follows:
the utility model discloses a hole transport layer adopts atomic layer deposition NiOx to realize:
nickel oxide is a well-known P-type binary oxide, and its defect chemistry has been studied for decades. As a simple binary compound, niOx films can be obtained by a variety of deposition methods, such as Physical Vapor Deposition (PVD), chemical Vapor Deposition (CVD), and a range of chemical solution deposition techniques. However, many of the properties of this simple compound, such as defect state density, grain size, work function, etc., are sensitive to deposition techniques, chemical selection and growth conditions. The comparison case of the utility model for the perovskite-silicon heterojunction laminated solar cell structure is the mature magnetron sputtering NiOx.
Atomic Layer Deposition (ALD) technology is based on a series of surface chemical reactions, in the process of which precursors are alternately added to a deposition reactor, resulting in deposition dominated by adsorption and surface reaction kinetics, and due to this self-limiting kinetics, ALD technology exhibits unique advantages in textured texture coverage, uniformity, and atomic-level control of film thickness.
Over the past two decades, different combinations of nickel and oxygen precursors, including Ni (Cp), have been used based on the use of ALD NiOx technology in different areas 2 、Ni（MeCp） 2 、Ni（EtCp） 2 、Ni（dmamp） 2 、Ni（dmamb） 2 、Ni（acac） 2 、Ni（apo） 2 、Ni（dmg） 2 、Ni（thd） 2 And Ni (amd) 2 And O 3 Water (H) 2 O), hydrogen peroxide (H) 2 O 2 ) Or oxygen plasma bonding.
The utility model adopts a precursor Ni (acac) 2 (TMEDA) as Ni Source, precursor Ni (acac) 2 (TMEDA) preparation: with 250mLNi (acac) 2 (12.845g, 50mmol) and hexane (60 mL) was added dropwise over 30 minutes to a mixed solution of TMEDA (6.392g, 55mmol) and hexane (20 mL); the resulting mixture was stirred at 25 ℃ ambient temperature for 2 hours, filtered and concentrated, cooled to-30 ℃ to give blue-green crystals Ni (acac) after 12 hours 2 （TMEDA）（16.790g，90%）。
The utility model adopts a special CCP-PEALD device, through O 2 The plasma provides oxygen active free radical as oxygen source, and the single crystal Si (111) light sheet substrate is used for technological parameter experiment and NiOx film characteristic test.
Some of the setup parameters are as follows: ni (acac) 2 The temperature of a (TMEDA) solid source bottle is kept at 80-95 ℃ (the generated steam pressure is about 0.1-0.3 hPa/1 atm), the dosage of a Ni precursor is 0.6-0.9 (10-8 mol/s) through the gas carrying function of boost argon (5N), the gas source of oxygen (5N) is controlled at 20-100sccm through a mass flow meter, and the oxygen (5N) is mixed with 200-1000sccm of argon to enter a reaction chamber and passes through CCP (radio frequency power is 0.5-1W/cm) 2 ) The mode generates O active free radicals, and corresponding plasma can emit radiation to assist the deposition of the film; the range of the substrate temperature is controlled to be 120 to 175 ℃, and the deposition pressure and the argon purging pressure are controlled to be 1 to 20Pa by setting a butterfly valve switch.
Pretreatment: o active free radical to increase the number of active adsorption sites, O2+ Ar+ CCP pulse is 5 to 10S + purge 1 to 5S; one complete atomic layer deposition cycle includes two half cycles: ni (acac) 2 (TMEDA) pulse is 0.1 to 0.5S + purge 1S and O2+ Ar + CCP pulse is 5 to 10S + purge 1 to 5S.
Film part information for embodiments of the present invention: a-NiOx:1.2A/cycle, film thickness nonuniformity of 1% (1 sigma), average grain size of about 2nm, and crystallization rate of about 60%; b-NiOx:1.4A/cycle, film thickness nonuniformity 1% (1 sigma), average grain size about 1.8nm, and crystallization rate about 50%.
The above is only a specific application example of the present invention, and does not constitute any limitation to the protection scope of the present invention. All technical solutions formed by adopting equivalent transformation or equivalent replacement fall within the protection scope of the present invention.
Claims (4)
1. A perovskite silicon heterojunction tandem solar cell structure, characterized in that: the battery comprises a top battery at the upper part, a bottom battery at the lower part and a tunneling layer between the top battery and the bottom battery, wherein the bottom battery comprises a double-sided silicon wafer (0), and the top battery comprises a perovskite thin film absorption layer (9); a first intrinsic layer (1), a sixth intrinsic layer (6) and a first ITO film (7) are sequentially arranged below the double-sided silicon wafer (0), and a second intrinsic layer (2), a third intrinsic layer (3), a fourth intrinsic layer (4) and a fifth intrinsic layer (5) are sequentially arranged between the double-sided silicon wafer (0) and the perovskite film absorption layer (9) from bottom to top to form a tunneling layer; a hole transport layer (8) is arranged above the fifth intrinsic layer (5) of the tunneling layer; a LiF thin film (10), a C60 thin film (11) and SnO are sequentially arranged above the perovskite thin film absorption layer (9) from bottom to top 2 A thin film (12) and a second ITO thin film (13), the LiF thin film (10), the C60 thin film (11), and SnO 2 The thin film (12) forms an electron transport layer.
2. The perovskite silicon heterojunction tandem solar cell structure of claim 1, wherein: the outer side of the first ITO film (7) is provided with a plurality of second electrodes (15), and the outer side of the second ITO film (13) is provided with a plurality of first electrodes (14).
3. The structure of claim 1, wherein the structure comprises: the thin film transistor is characterized in that the first intrinsic layer (1) is an intrinsic amorphous silicon thin film, the second intrinsic layer (2) is an intrinsic amorphous silicon thin film, the third intrinsic layer (3) is an N-type microcrystalline silicon-oxygen thin film, the fourth intrinsic layer (4) is a heavily doped N-type nanocrystalline silicon-oxygen thin film, the fifth intrinsic layer (5) is a heavily doped P-type nanocrystalline silicon-oxygen thin film, and the sixth intrinsic layer (6) is a P-type microcrystalline silicon-oxygen thin film.
4. The structure of claim 3, wherein the structure comprises: the thickness of the first intrinsic layer (1) is 3nm, the thickness of the second intrinsic layer (2) is 3nm, the thickness of the third intrinsic layer (3) is 5nm, the thickness of the fourth intrinsic layer (4) is 2nm, the thickness of the fifth intrinsic layer (5) is 2nm, and the thickness of the sixth intrinsic layer (6) is 5nm.
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