CN218783027U - Power device and electronic equipment - Google Patents
Power device and electronic equipment Download PDFInfo
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- CN218783027U CN218783027U CN202222929338.8U CN202222929338U CN218783027U CN 218783027 U CN218783027 U CN 218783027U CN 202222929338 U CN202222929338 U CN 202222929338U CN 218783027 U CN218783027 U CN 218783027U
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Abstract
The application provides a power device and electronic equipment, and relates to the technical field of semiconductor packaging. The power device comprises at least two power chip assemblies, at least two heat dissipation bottom plates, a first gap bridge, a shell and a main current outgoing line, wherein the number of the power chip assemblies is the same as that of the heat dissipation bottom plates, each power chip assembly is positioned on one heat dissipation bottom plate, every two adjacent heat dissipation bottom plates are arranged at intervals, and the at least two power chip assemblies are connected through the first gap bridge; the shell is sleeved on the at least two heat dissipation bottom plates, and the at least two power chip assemblies and the first gap bridge are positioned in the shell; one end of the main current lead-out wire is electrically connected with the power chip assembly, and the other end of the main current lead-out wire penetrates through the shell and forms a main current terminal. The power device and the electronic equipment have the advantages of being strong in heat dissipation capacity and high in possibility.
Description
Technical Field
The application relates to the technical field of semiconductor packaging, in particular to a power device and electronic equipment.
Background
The power module is made by connecting two or more power semiconductor chips according to a certain circuit topology and encapsulating the power semiconductor chips and an auxiliary circuit together in an insulating resin case. The modules can be divided into: the structure of the module is that a chip and a leading-out terminal are welded on one or more ceramic copper clad plates and are connected in a topological way by bonding or welding, and all the ceramic copper clad plates are welded on a whole copper base plate so as to form good insulation and heat dissipation performance.
However, since all chips share one heat sink base plate, thermal coupling between chips is severe. Meanwhile, because the thermal expansion coefficients of the copper base plate and the ceramic copper-clad plate are greatly different, the thermal effect of the bimetallic strip occurs in the welding and using processes, the ceramic copper-clad plate is seriously bent, the stress failure of a chip is caused, meanwhile, the welding flux is continuously subjected to temperature impact in the using process to repeatedly plastically deform and crack, the thermal resistance between the copper base plate and the welding flux is continuously increased, the performance is degraded, and the reliability of the power module is reduced.
In summary, the power module provided in the prior art has a problem of low reliability.
SUMMERY OF THE UTILITY MODEL
The application aims to provide a power device and electronic equipment to solve the problem that a power module in the prior art is low in reliability.
In order to achieve the above purpose, the embodiments of the present application employ the following technical solutions:
on one hand, the embodiment of the application provides a power device, the power device comprises at least two power chip assemblies, at least two heat dissipation bottom plates, a first gap bridge, a shell and a main current outgoing line, the number of the power chip assemblies is the same as that of the heat dissipation bottom plates, each power chip assembly is located on one heat dissipation bottom plate, every two adjacent heat dissipation bottom plates are arranged at intervals, and the at least two power chip assemblies are connected through the first gap bridge;
the shell is sleeved on the at least two heat dissipation bottom plates, and the at least two power chip assemblies and the first gap bridge are positioned in the shell;
one end of the main current outgoing line is electrically connected with the power chip assembly, and the other end of the main current outgoing line penetrates through the shell to form a main current terminal.
Optionally, each power chip assembly includes a ceramic copper-clad plate, a power device chip, and an electrode plate, and the heat dissipation base plate, the ceramic copper-clad plate, the power device chip, and the electrode plate are connected layer by layer.
Optionally, the power device chip includes a power integrated chip, a power transistor, a thyristor, a triode, or a diode.
Optionally, the at least two power chip assemblies include a first power chip assembly and a second power chip assembly, and the main current lead-out lines include a first main current lead-out line, a second main current lead-out line, and a third main current lead-out line;
the anode of the first power chip assembly is electrically connected with the first main current outgoing line, the cathode of the first power chip assembly is electrically connected with the anode of the second power chip assembly through the first bridge, the anode of the second power chip assembly is also electrically connected with the third main current outgoing line, and the cathode of the second power chip assembly is electrically connected with the second main current outgoing line.
Optionally, the first power chip component includes a first ceramic copper-clad plate serving as an anode, the second power chip component includes a second ceramic copper-clad plate serving as an anode, and the first main current lead-out wire is located above the first ceramic copper-clad plate and electrically connected with the first ceramic copper-clad plate;
the second main current leading-out wire and the third main current leading-out wire are both located above the second ceramic copper-clad plate, electrical isolation is formed between the second main current leading-out wire and the second ceramic copper-clad plate, and the third main current leading-out wire is electrically connected with the second ceramic copper-clad plate.
Optionally, the second main current outgoing line and the third main current outgoing line are respectively located above two sides of the second ceramic copper-clad plate.
Optionally, the power device further includes a second via bridge, through which the cathode of the second power chip assembly is electrically connected to the second main current lead.
Optionally, the housing includes a housing bottom and a housing cover, the housing is sleeved on the at least two heat dissipation base plates, an accommodating cavity is arranged in the housing, and the at least two power chip assemblies are located in the cavity;
the shell cover is arranged on the shell bottom and is provided with a leading-out cavity, and the main current leading-out wire penetrates through the leading-out cavity and exposes the main current terminal.
Optionally, the power device further includes a filling layer, and the filling layer is filled in the housing.
On the other hand, an embodiment of the present application further provides an electronic device, where the electronic device includes the power device.
Compared with the prior art, the method has the following beneficial effects:
the embodiment of the application provides a power device and electronic equipment, wherein the power device comprises at least two power chip assemblies, at least two heat dissipation bottom plates, a first gap bridge, a shell and a main current outgoing line, the number of the power chip assemblies is the same as that of the heat dissipation bottom plates, each power chip assembly is positioned on one heat dissipation bottom plate, every two adjacent heat dissipation bottom plates are arranged at intervals, and the at least two power chip assemblies are connected through the first gap bridge; the shell is sleeved on the at least two heat dissipation bottom plates, and the at least two power chip assemblies and the first gap bridge are positioned in the shell; one end of the main current lead-out wire is electrically connected with the power chip assembly, and the other end of the main current lead-out wire penetrates through the shell and forms a main current terminal. Because the at least two radiating bottom plates are arranged and each power chip assembly is arranged on one radiating bottom plate, the independence of the radiating bottom plates in each power chip assembly is realized, the expansion sizes of the ceramic copper-clad plate and the radiating bottom plates are reduced, the plastic deformation of the welding flux is reduced, the increase of thermal resistance and the decline of heat-conducting property are reduced, and the service life and the reliability of the product of the whole power device are improved.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and it will be apparent to those skilled in the art that other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a schematic structural diagram of a power device according to an embodiment of the present disclosure.
Fig. 2 is a schematic structural diagram of a housing of a power device in a first viewing angle according to an embodiment of the present application.
Fig. 3 is a schematic structural diagram of a housing of a power device in a second viewing angle according to an embodiment of the present application.
In the figure:
100-power devices; 110-a first power chip assembly; 111-a first ceramic copper-clad plate; 112-a first power device chip; 113-a first electrode sheet; 120-a second power chip assembly; 121-a second ceramic copper-clad plate; 122-a second power device chip; 123-a second electrode sheet; 130-a first heat sink base plate; 140-a second heat sink base plate; 150-a first bridge; 160-a second bridge; 171-a first main current outlet; 172-a second main current outlet; 173-a third main current outlet; 174-a first main current terminal; 175-second main current terminal; 176-a third main current terminal; 180-a housing; 181-shell bottom; 182-a housing cover.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, as presented in the figures, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined or explained in subsequent figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of another identical element in a process, method, article, or apparatus that comprises the element.
In the description of the present application, it should be noted that the terms "upper", "lower", "inner", "outer", and the like indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings or orientations or positional relationships conventionally found in use of products of the application, and are used only for convenience in describing the present application and for simplification of description, but do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present application.
In the description of the present application, it is also to be noted that, unless otherwise explicitly specified or limited, the terms "disposed" and "connected" are to be interpreted broadly, e.g., as being either fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The embodiments and features of the embodiments described below can be combined with each other without conflict.
As described in the background of the invention, in the prior art, all chips in a power module generally share a heat dissipation base plate, which results in serious thermal coupling between the chips and relatively low reliability of the power module.
In view of the above, referring to fig. 1, the present application provides a power device 100, where the power device 100 includes at least two power chip assemblies, at least two heat dissipation bottom plates, a first bridge 150, a housing 180, and a main current outgoing line, the number of the power chip assemblies is the same as that of the heat dissipation bottom plates, each power chip assembly is located on one heat dissipation bottom plate, two adjacent heat dissipation bottom plates are arranged at intervals, and at least two power chip assemblies are connected through the first bridge 150; the housing 180 is sleeved on the at least two heat dissipation bottom plates, and the at least two power chip assemblies and the first bridge 150 are located in the housing 180; one end of the main current lead-out wire is electrically connected to the power chip assembly, and the other end thereof penetrates through the case 180 and forms a main current terminal.
Because the number of the power chip assemblies and the number of the heat dissipation base plates are the same, an independent heat dissipation base plate is arranged for each power chip assembly, and thermal coupling among chips in the power device 100 is reduced. And moreover, the independent radiating bottom plate is adopted, so that the size of the bottom plate is reduced by division, the expansion size of the ceramic copper-clad plate and the radiating bottom plate in the power chip assembly is reduced, the stress deformation of the ceramic copper-clad plate and the chip is reduced, the qualification rate and the reliability of the product are improved, meanwhile, the plastic deformation of the welding flux is reduced, the increase of thermal resistance and the decline of the heat-conducting property are reduced, and the service life and the reliability of the product are further improved.
The number of the power chip assemblies and the number of the heat dissipation base plates are not limited in the present application, and generally, for example, the number of the power chip assemblies and the number of the heat dissipation base plates may be 2, or 3 or more, and accordingly, when the number of the power chip assemblies and the number of the heat dissipation base plates are different, the number of the first bridge 150 and the number of the main current lead-out wires are also different. For convenience of illustration, the present application takes 2 heat dissipation base plates and 2 power chip assemblies included in the power device 100 as an example.
In one embodiment, each power chip component comprises a ceramic copper-clad plate, a power device chip and an electrode plate, the heat dissipation base plate, the ceramic copper-clad plate, the power device chip and the electrode plates are connected layer by layer, namely the ceramic copper-clad plate is arranged on the heat dissipation base plate, the power device chip is arranged on the ceramic copper-clad plate, and the electrode plates are arranged on the power device chip. Generally, the area of the heat dissipation base plate is larger than that of the ceramic copper-clad plate, and the area of the ceramic copper-clad plate is larger than that of the power device chip and the electrode plate.
It should be noted that the present application also does not limit the type of the power device chip, for example, the power device chip includes a power integrated chip, a power transistor, a thyristor, a triode, or a diode, and for convenience of description, the power device chip is taken as the diode in the present application as an example.
On this basis, when the power device 100 includes 2 power chip assemblies and 2 heat dissipation base plates, the power device 100 includes a first power chip assembly 110 and a second power chip assembly 120, the main current lead wires include a first main current lead wire 171, a second main current lead wire 172 and a third main current lead wire 173, and the anode of the first power chip assembly 110 is electrically connected to the first main current lead wire 171, the cathode of the first power chip assembly 110 is electrically connected to the anode of the second power chip assembly 120 through the first bridge 150, the anode of the second power chip assembly 120 is also electrically connected to the third main current lead wire 173, and the cathode of the second power chip assembly 120 is electrically connected to the second main current lead wire 172.
Referring to fig. 2, first main current lead wire 171, second main current lead wire 172, and third main current lead wire 173 pass through housing 180 to form 3 main current terminals, which are first main current terminal 174, second main current terminal 175, and third main current terminal 176, respectively.
By the above connection, an equivalent circuit as shown in the figure is realized, and the first main current terminal 174, the second main current terminal 175 and the third main current terminal 176 may be externally connected with a circuit respectively.
In addition, through setting up independent radiating bottom plate, can also reach miniaturized purpose, radiating bottom plate only need be greater than first ceramic copper-clad plate 111 and second ceramic copper-clad plate 121 promptly can.
In order to further realize the miniaturization of the power device 100, in one implementation manner, the first main current outgoing line 171 is located above the first ceramic copper-clad plate 111 and is electrically connected with the first ceramic copper-clad plate 111; the second main current outgoing line 172 and the third main current outgoing line 173 are both located above the second copper-clad ceramic plate 121, electrical isolation is formed between the second main current outgoing line 172 and the second copper-clad ceramic plate 121, and the third main current outgoing line 173 is electrically connected with the second copper-clad ceramic plate 121.
Through the implementation mode, the overall occupied volume formed by the first main current outgoing line 171 and the first ceramic copper-clad plate 111 is the minimum, the overall occupied volume formed by the second main current outgoing line 172, the third main current outgoing line 173 and the third ceramic copper-clad plate is also the minimum, and the volume of the power device 100 is reduced on the whole.
The power device 100 further includes a second bridge 160, the cathode of the second power chip assembly 120 is electrically connected to a second main current outgoing line 172 through the second bridge 160, and the second main current outgoing line 172 and a third main current outgoing line 173 are respectively located above two sides of the second ceramic copper-clad plate 121.
The second main current outgoing line 172 and the third main current outgoing line 173 are respectively positioned above two sides of the second ceramic copper-clad plate 121, so that the distance between the second main current outgoing line 172 and the third main current line is ensured, and meanwhile, because the second main current outgoing line and the third main current line are both positioned on two sides of the second ceramic copper-clad plate 121, the orthographic projection of the second main current outgoing line and the third main current line still fall in the range of the second ceramic copper-clad plate 121, and the effect of minimum occupied volume is achieved.
Meanwhile, the second electrode plate 123 is connected with the second main current outgoing line 172 through the second bridge 160, so that the distance between the second main current outgoing line 172 and the third main current outgoing line 173 is ensured, and further, a sufficient distance can be formed between the main current terminals penetrating through the outer shell 180, thereby facilitating the connection with an external circuit.
In addition, optionally, the first main current outgoing line 171 is located on one side far away from the second power chip assembly 120, through this implementation manner, when the first main current outgoing line 171 is electrically connected with the first ceramic copper-clad plate 111, only the area of one side far away from the second power chip assembly 120 in the first ceramic copper-clad plate 111 is occupied, and the second power device chip 122 and the second electrode piece 123 can be arranged on one side close to the second power chip assembly 120 in the first ceramic copper-clad plate 111, so that the length of the first gap bridge 150 can be shortest, and when miniaturization is realized, the cost of the first gap bridge 150 is reduced.
In one implementation, the cross-sectional area of the end of the first main current lead wire 171, the second main current lead wire 172, and the third main current lead wire 173 connected to the power chip assembly is smaller than the cross-sectional area of the main current terminal formed through the case 180. On the one hand, the contact area of the first main current leading-out wire 171 and the third main current leading-out wire 173 with the ceramic copper-clad plate is small, the area of the ceramic copper-clad plate can be set to be relatively small, and the miniaturization is convenient to achieve. On the other hand, the main current terminal has larger volume and is convenient to be connected with an external circuit.
As an alternative implementation manner, the casing 180 includes a casing bottom 181 and a casing cover 182, referring to fig. 3, the casing is sleeved on at least two heat dissipation bottom plates, and a containing cavity is disposed in the casing, and at least two power chip assemblies are located in the cavity. Wherein, the casing can set up to the structure of fretwork from top to bottom, then the cover is established on the radiating bottom plate for the radiating bottom plate exposes, and the power chip subassembly is located the cavity that holds that forms simultaneously. Naturally, in order to make the connection more firm, the heat dissipation bottom plate and the housing may be fastened together.
The shell cover 182 is covered on the shell bottom 181 and is provided with a leading-out cavity, and the main current leading-out wire penetrates through the leading-out cavity and exposes the main current terminal. It is understood that when the number of the power chip assemblies is 2, the lead-out cavities need to be set to 3.
In order to protect voltage isolation between the power chip components, the power device 100 further includes a filling layer filled in the casing 180. The filling layer may be silicone gel and encases all of the components except the exposed three main current terminals, thereby providing mechanical and electrical protection for the components.
When the power device 100 provided by the present application is manufactured, the first heat dissipation base plate 130, the first ceramic copper-clad plate 111, the first power device chip 112, and the first electrode sheet 113 may be connected in sequence; meanwhile, the first main current pin is also assembled above the first ceramic copper-clad plate 111 and is electrically connected with the first ceramic copper-clad plate 111.
Meanwhile, the second heat dissipation base plate 140, the second ceramic copper-clad plate 121, the second power device chip 122 and the second electrode sheet 123 can be connected in sequence; meanwhile, the third main current pin is arranged on (above) the second copper-clad ceramic plate 121 and electrically connected with the second copper-clad ceramic plate 121, and the second main current pin is also arranged on the second copper-clad ceramic plate 121 and electrically isolated from the second copper-clad ceramic plate 121.
Then, clamping by using a jig to form welding, wherein the welding mode can be silver sintered solder and can be Pb 92.5 Sn 5 Ag 2.5 The solder may be Sn 96.5 Ag 3 Cu 0.5 Welding flux; preferably, pb is selected in the process step 92.5 Sn 5 Ag 2.5 And (5) welding materials, and performing welding by using a reflow soldering furnace.
After the above steps are completed, the above structure is mounted on the housing bottom 181 in a sleeved manner. After the glue is preferably used for bonding, two ends of the heat dissipation bottom plate are fixed by small screws, so that the coplanarity of the bottom plates is ensured; then, one end of the first gap bridge 150 is connected with the first electrode plate 113 by solder, and the other end is connected with the second ceramic copper-clad plate 121 by solder, preferably, sn is selected in the step 96.5 Ag 3 Cu 0.5 Welding flux and welding by using a reflow oven; after the bonding glue is cured, injecting protective silica gel into the shell, and curing; the case cover 182 is assembled, and the main current terminal is led out and bent, thereby completing the manufacture of the power device 100.
Based on the foregoing implementation manner, an embodiment of the present application further provides an electronic device, where the electronic device includes the foregoing power device.
In summary, the embodiment of the present application provides a power device and an electronic apparatus, the power device includes at least two power chip assemblies, at least two heat dissipation bottom plates, a first bridge, a housing, and a main current outgoing line, the number of the power chip assemblies is the same as that of the heat dissipation bottom plates, each power chip assembly is located on one heat dissipation bottom plate, two adjacent heat dissipation bottom plates are arranged at intervals, and at least two power chip assemblies are connected through the first bridge; the shell is sleeved on the at least two heat dissipation bottom plates, and the at least two power chip assemblies and the first gap bridge are positioned in the shell; one end of the main current lead-out wire is electrically connected with the power chip assembly, and the other end of the main current lead-out wire penetrates through the shell to form a main current terminal. Because the at least two radiating bottom plates are arranged and each power chip assembly is arranged on one radiating bottom plate, the independence of the radiating bottom plates in each power chip assembly is realized, the expansion size of the ceramic copper-clad plate and the radiating bottom plates is reduced, the plastic deformation of the solder is reduced, the increase of thermal resistance and the decline of heat conducting performance are reduced, and the service life and the reliability of the whole power device are improved.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
It will be evident to those skilled in the art that the present application is not limited to the details of the foregoing illustrative embodiments, and that the present application may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the application being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (10)
1. A power device is characterized by comprising at least two power chip assemblies, at least two heat dissipation bottom plates, a first gap bridge, a shell and a main current outgoing line, wherein the number of the power chip assemblies is the same as that of the heat dissipation bottom plates, each power chip assembly is positioned on one heat dissipation bottom plate, every two adjacent heat dissipation bottom plates are arranged at intervals, and the at least two power chip assemblies are connected through the first gap bridge;
the shell is sleeved on the at least two heat dissipation base plates, and the at least two power chip assemblies and the first gap bridge are positioned in the shell;
one end of the main current outgoing line is electrically connected with the power chip assembly, and the other end of the main current outgoing line penetrates through the shell to form a main current terminal.
2. The power device of claim 1, wherein each of the power chip assemblies comprises a ceramic copper-clad plate, a power device chip and an electrode sheet, and the heat dissipation base plate, the ceramic copper-clad plate, the power device chip and the electrode sheet are connected layer by layer.
3. The power device of claim 2, wherein the power device chip comprises a power integrated chip, a power transistor, a thyristor, a triode, or a diode.
4. The power device of claim 1, wherein the at least two power chip components include a first power chip component and a second power chip component, the main current pinouts include a first main current pinout, a second main current pinout, and a third main current pinout;
the positive pole of first power chip subassembly with first main current lead-out wire electricity is connected, the negative pole of first power chip subassembly passes through first gap bridge with the positive pole electricity of second power chip subassembly is connected, the positive pole of second power chip subassembly still with third main current lead-out wire electricity is connected, the negative pole of second power chip subassembly with second main current lead-out wire electricity is connected.
5. The power device of claim 4, wherein the first power chip assembly comprises a first copper clad ceramic plate serving as an anode, the second power chip assembly comprises a second copper clad ceramic plate serving as an anode, and the first main current lead-out wire is positioned above the first copper clad ceramic plate and is electrically connected with the first copper clad ceramic plate;
the second main current outgoing line and the third main current outgoing line are both located above the second ceramic copper-clad plate, electrical isolation is formed between the second main current outgoing line and the second ceramic copper-clad plate, and the third main current outgoing line is electrically connected with the second ceramic copper-clad plate.
6. The power device of claim 5, wherein the second main current outgoing line and the third main current outgoing line are respectively positioned above two sides of the second copper-clad ceramic plate.
7. The power device of claim 4, further comprising a second bridge through which a cathode of the second power chip assembly is electrically connected to the second main current lead.
8. The power device of claim 1, wherein the housing comprises a casing and a casing cover, the casing is sleeved on the at least two heat dissipation bottom plates, a containing cavity is arranged in the casing, and the at least two power chip assemblies are located in the containing cavity;
the shell cover is arranged on the shell and provided with a leading-out cavity, and the main current leading-out wire penetrates through the leading-out cavity and exposes the main current terminal.
9. The power device of claim 1, further comprising a fill layer, the fill layer filling within the housing.
10. An electronic device, characterized in that the electronic device comprises a power device according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222929338.8U CN218783027U (en) | 2022-11-03 | 2022-11-03 | Power device and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222929338.8U CN218783027U (en) | 2022-11-03 | 2022-11-03 | Power device and electronic equipment |
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| Publication Number | Publication Date |
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| CN218783027U true CN218783027U (en) | 2023-03-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202222929338.8U Active CN218783027U (en) | 2022-11-03 | 2022-11-03 | Power device and electronic equipment |
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| CN (1) | CN218783027U (en) |
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