CN218772012U - Bias circuit and radio frequency circuit of power amplifier - Google Patents
Bias circuit and radio frequency circuit of power amplifier Download PDFInfo
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- CN218772012U CN218772012U CN202223022190.6U CN202223022190U CN218772012U CN 218772012 U CN218772012 U CN 218772012U CN 202223022190 U CN202223022190 U CN 202223022190U CN 218772012 U CN218772012 U CN 218772012U
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Abstract
The utility model provides a power amplifier's bias circuit and radio frequency circuit relates to circuit technical field. The method comprises the following steps: the circuit comprises a first transistor, a first resistor and a unidirectional conduction module; a first pole of the first transistor is connected with a radio frequency input end of the power amplifier, a second pole of the first transistor is connected with a first power supply end of a preset power supply through a first resistor, and a third pole of the first transistor is grounded; the positive pole of the one-way conduction module is connected with the first connecting point, the negative pole of the one-way conduction module is connected with the second connecting point, and the second connecting point is connected with a second power supply end of the preset power supply. The setting of the one-way conduction module can enable the first connection point and the second connection point to be mutually influenced, and the first transistor and the first resistor which are arranged on the basis again can enable the potential at the second connection point to be in a stable state when the external power supply voltage fluctuates, so that the input voltage of the power amplifier is more stable, and the working state of the power amplifier is more stable.
Description
Technical Field
The utility model relates to the technical field of circuits, particularly, relate to a power amplifier's biasing circuit and radio frequency circuit.
Background
A power amplifier is an amplifier that can generate maximum power output to drive a load under a given distortion rate. The power amplifier plays a role of "organization and coordination" in the whole rf transceiver system, and to some extent, governs whether the whole system can provide sufficient output power and whether the system can have sufficient dc conversion efficiency.
In the related art, a conventional negative power supply resistor voltage division biasing or source resistor self-biasing scheme is generally adopted for a power amplifier, and the performance of the power amplifier is greatly changed along with the fluctuation of an external power supply. However, the bias method in the related art cannot effectively solve the problem of unstable operation of the power amplifier caused by the fluctuation of the external power supply voltage.
SUMMERY OF THE UTILITY MODEL
An object of the present invention is to provide a bias circuit and a radio frequency circuit of a power amplifier to solve the above technical problems existing in the related art.
In order to achieve the above object, the embodiment of the present invention adopts the following technical solutions:
in a first aspect, an embodiment of the present invention provides a bias circuit of a power amplifier, including: the circuit comprises a first transistor, a first resistor and a unidirectional conduction module;
a first pole of the first transistor is connected with a radio frequency input end of the power amplifier, a second pole of the first transistor is connected with a first power supply end of a preset power supply through the first resistor, and a third pole of the first transistor is grounded; the anode of the unidirectional conduction module is connected with a first connection point, the cathode of the unidirectional conduction module is connected with a second connection point, and the second connection point is connected with a second power supply end of the preset power supply; the first connection point is a second pole of the first transistor, and the second connection point is a connection point between the first pole of the first transistor and the radio frequency input end of the power amplifier.
Optionally, the unidirectional conducting module includes: at least one unidirectional conducting device connected in sequence;
the anode of a first one-way conduction device in the at least one-way conduction device is connected with the first connecting point; and the cathode of the last one-way conduction device in the at least one-way conduction device is connected with the second connection point.
Optionally, the bias circuit further includes: a second resistor; the second resistor is connected between the first pole of the first transistor and the second connection point.
Optionally, the bias circuit further includes: a third resistor; the third resistor is connected between the second connecting point and a second power supply end of the preset power supply.
Optionally, the bias circuit further includes: a fourth resistor; the fourth resistor is connected between the second connection point and the radio frequency input end of the power amplifier.
Optionally, the first transistor is a first field effect transistor, a first electrode of the first field effect transistor is a gate, a second electrode of the first field effect transistor is a drain, and a third electrode of the first field effect transistor is a source.
In a second aspect, the embodiment of the present invention further provides a radio frequency circuit, including: a power amplifier and the bias circuit of any of the first aspect;
the radio frequency input end of the power amplifier is connected with the first electrode of the first transistor in the bias circuit, the positive power end of the power amplifier is connected with the first power end of a preset power supply, and the negative power end of the power amplifier is grounded.
Optionally, the power amplifier includes: the radio frequency input end, the radio frequency output end, the second transistor and the inductor are connected;
a first pole of the second transistor is connected to the radio frequency input terminal, a second pole of the second transistor is connected to one end of the inductor, and the other end of the inductor is a positive power supply terminal of the power amplifier and is used for being connected to a first power supply terminal of the preset power supply; and the third pole of the second transistor is used for grounding the negative power supply end of the power amplifier.
Optionally, the power amplifier further includes: a first capacitor and a second capacitor;
and a first pole of the second transistor is connected with the radio frequency input end through the first capacitor, and a second pole of the second transistor is connected with the radio frequency output end through the second capacitor.
Optionally, the second transistor is a second field effect transistor, a first electrode of the second field effect transistor is a gate, a second electrode of the second field effect transistor is a drain, and a third electrode of the second field effect transistor is a source.
The utility model has the advantages that: the embodiment of the utility model provides a power amplifier's biasing circuit and radio frequency circuit, include: the circuit comprises a first transistor, a first resistor and a unidirectional conduction module; a first pole of the first transistor is connected with a radio frequency input end of the power amplifier, a second pole of the first transistor is connected with a first power supply end of a preset power supply through a first resistor, and a third pole of the first transistor is grounded; the positive electrode of the one-way conduction module is connected with the first connecting point, the negative electrode of the one-way conduction module is connected with the second connecting point, and the second connecting point is connected with a second power supply end of a preset power supply; the first connection point is a second pole of the first transistor, and the second connection point is a connection point between the first pole of the first transistor and the radio frequency input end of the power amplifier. The setting of the unidirectional conduction module can enable the first connection point and the second connection point to mutually influence, and the first transistor and the first resistor which are arranged on the basis again can enable the potential at the second connection point to be in a stable state when the voltage of an external power supply fluctuates, so that the voltage input by the power amplifier is more stable, and the working state of the power amplifier is more stable.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a bias circuit of a power amplifier according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a bias circuit of a power amplifier according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a bias circuit of a power amplifier according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of an rf circuit of a power amplifier according to an embodiment of the present application;
fig. 5 is a schematic structural diagram of a radio frequency circuit of a power amplifier according to an embodiment of the present disclosure;
fig. 6 is a schematic structural diagram of a radio frequency circuit of a power amplifier according to an embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention, as generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by a person skilled in the art without making creative efforts belong to the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate the directions or positional relationships based on the directions or positional relationships shown in the drawings, or the directions or positional relationships that the products of the present invention are usually placed when used, and are only for the convenience of describing the present invention and simplifying the description, but do not indicate or imply that the device or element indicated must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal", "vertical" and the like do not imply that the components are required to be absolutely horizontal or pendant, but rather may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
First embodiment
Fig. 1 is a schematic structural diagram of a bias circuit of a power amplifier according to an embodiment of the present disclosure, and as shown in fig. 1, the bias circuit of the power amplifier may include: the circuit comprises a first transistor M1, a first resistor R1 and a unidirectional conducting module 101.
A first pole of the first transistor M1 is connected to the rf input terminal of the power amplifier 102, a second pole of the first transistor M1 is connected to a first power terminal VDD of a preset power source through a first resistor R1, and a third pole of the first transistor M1 is grounded; the positive electrode of the unidirectional conduction module 101 is connected with a first connection point, the negative electrode of the unidirectional conduction module 101 is connected with a second connection point, and the second connection point is connected with a second power supply end VSS of a preset power supply; the first connection point is a second pole of the first transistor M1, and the second connection point is a connection point between the first pole of the first transistor M1 and the rf input terminal of the power amplifier 102.
The first transistor M1 may be a triode or a field effect transistor, which is not specifically limited in the embodiment of the present application.
It should be noted that the first connection point and the second connection point are connected through the unidirectional conductive module 101, which enables the potentials between the first connection point and the second connection point to affect each other. For example, if the potential at the second connection point decreases, the potential at the first connection point decreases; if the potential at the second connection point increases, the potential at the first connection point also increases.
In some embodiments, if the first power terminal VDD of the preset power supply is lowered, the potential of the second connection point is lowered, and the potential of the first connection point is also lowered, which results in an increase in the current flowing through the first resistor R1, so that the current of the second pole of the first transistor M1 is increased, and further the potential of the first pole of the first transistor M1 is increased, and the potential of the second connection point is increased, thereby alleviating the decrease in the potential of the second connection point, and the voltage input by the power amplifier 102 is more stable, so that the operating state of the power amplifier 102 is more stable.
In other embodiments, if the first power terminal VDD of the preset power supply is increased, the potential at the second connection point is increased, and the potential at the first connection point is also increased, so that the current flowing through the first resistor R1 is decreased, and thus the current of the second pole of the first transistor M1 is decreased, and further the potential of the first pole of the first transistor M1 is decreased, and the potential at the second connection point is decreased, so that the increase of the potential at the second connection point is alleviated, the voltage input to the power amplifier 102 is more stable, and the operating state of the power amplifier 102 is more stable.
It should be noted that, in the above process, when the first power source terminal VDD of the preset power source is decreased or the first power source terminal VDD of the preset power source is increased, that is, when the external power source voltage fluctuates, the potential at the second connection point is in a stable state, and the voltage input by the power amplifier 102 is also more stable, so that the operating state of the power amplifier 102 is more stable.
In this embodiment, the first power source terminal VDD of the preset power source may be a positive power source terminal of the preset power source, and the second power source terminal VSS of the preset power source may be a positive power source terminal of the preset power source or a negative power source terminal of the preset power source. For example, if the first transistor belongs to a depletion mode device, the second power supply terminal VSS of the preset power supply may be a negative power supply terminal of the preset power supply; if the first transistor belongs to the enhancement type device, the second power source terminal VSS of the preset power source may be a positive power source terminal of the preset power source.
In summary, the present application provides a bias circuit of a power amplifier, including: the circuit comprises a first transistor, a first resistor and a unidirectional conduction module; a first pole of the first transistor is connected with a radio frequency input end of the power amplifier, a second pole of the first transistor is connected with a first power supply end of a preset power supply through a first resistor, and a third pole of the first transistor is grounded; the positive electrode of the one-way conduction module is connected with the first connecting point, the negative electrode of the one-way conduction module is connected with the second connecting point, and the second connecting point is connected with a second power supply end of a preset power supply; the first connection point is a second pole of the first transistor, and the second connection point is a connection point between the first pole of the first transistor and the radio frequency input end of the power amplifier. The setting of the one-way conduction module can enable the first connection point and the second connection point to be mutually influenced, and the first transistor and the first resistor which are arranged on the basis again can enable the potential at the second connection point to be in a stable state when the external power supply voltage fluctuates, so that the input voltage of the power amplifier is more stable, and the working state of the power amplifier is more stable.
In the embodiment of the present application, the power amplifier 102 may include a second transistor, and in a process of operating the power amplifier 102 and the bias circuit, when process parameters of the first transistor M1 and the second transistor are changed due to process variations or temperature changes, the process parameters may include a transconductance gm and a threshold voltage Vth. For the case that gm and Vth are increased or decreased simultaneously, the operation of the bias circuit and the power amplifier 102 is not affected, so that the following mainly increases gm and decreases Vth; or gm decreases and Vth increases.
In some embodiments, if gm increases and Vth decreases, the potential at the second connection point decreases, and the potential at the first connection point decreases accordingly, so that the current flowing through the first resistor R1 increases, and therefore the current of the second pole of the first transistor M1 increases, and further the potential of the first pole of the first transistor M1 increases, and therefore the potential at the second connection point increases, so that the decrease in the potential at the second connection point is alleviated, and the voltage input by the power amplifier 102 is more stable, and therefore the operating state of the power amplifier 102 is more stable.
In some embodiments, if gm is decreased and Vth is increased, the potential at the second connection point is increased, and the potential at the first connection point is increased accordingly, so that the current flowing through the first resistor R1 is decreased, and therefore the current of the second pole of the first transistor M1 is decreased, and further the potential of the first pole of the first transistor M1 is decreased, and the potential at the second connection point is decreased, so that the increase of the potential at the second connection point is alleviated, and the voltage input by the power amplifier 102 is more stable, and therefore the operating state of the power amplifier 102 is more stable.
Notably, in the above process, at gm increase, vth decreases; or gm is decreased, and Vth is increased, that is, when the process parameters of the first transistor M1 and the second transistor are changed due to process variations, temperature, and the like, the potential at the second connection point can be in a stable state, and the voltage input by the power amplifier 102 is more stable, so that the operating state of the power amplifier 102 is more stable.
Optionally, the unidirectional conducting module 101 includes: at least one unidirectional conducting device connected in sequence; the anode of a first one-way conduction device in the at least one-way conduction device is connected with the first connecting point; and the cathode of the last one-way conduction device in the at least one-way conduction device is connected with the second connection point.
The unidirectional conducting device can be a diode. If the number of the diodes is one, the anode of the diode is connected with the first connection point, and the cathode of the diode is connected with the second connection point. If the number of the diodes is multiple, the diodes are connected in sequence, the anode of the first diode in the diodes is connected with the first connection point, and the cathode of the last diode is connected with the second connection point.
Fig. 2 is a schematic structural diagram of a bias circuit of a power amplifier according to an embodiment of the present disclosure, and as shown in fig. 2, the unidirectional conducting module 101 includes three diodes D1, D2, and D3, an anode of the first diode D1 is connected to the first connection point, and a cathode of the third diode D3 is connected to the second connection point.
Optionally, fig. 3 is a schematic structural diagram of a bias circuit of a power amplifier according to an embodiment of the present application, and as shown in fig. 3, the bias circuit further includes: a second resistor R2; the second resistor R2 is connected between the first pole of the first transistor M1 and the second connection point.
The number of the second resistors R2 may be at least one, at least one second resistor R2 may be connected in series, and the at least one second resistor R2 may play a role of limiting current, where the number of the at least one second resistor R2 is not particularly limited in this embodiment of the application.
Optionally, as shown in fig. 3, the bias circuit further includes: a third resistor R3; the third resistor R3 is connected between the second connection point and the second power source terminal VSS of the predetermined power source.
The number of the third resistors R3 may be at least one, at least one third resistor R3 may be connected in series, and the at least one third resistor R3 may play a role of limiting current, where the number of the at least one third resistor R3 is not particularly limited in this embodiment of the application.
Optionally, as shown in fig. 3, the bias circuit further includes: a fourth resistor R4; the fourth resistor R4 is connected between the second connection point and the rf input of the power amplifier 102.
The number of the fourth resistors R4 may be at least one, at least one fourth resistor R4 may be connected in series, and at least one fourth resistor R4 may play a role of limiting current, where the number of the at least one fourth resistor R4 is not particularly limited in this embodiment of the application.
Optionally, the first transistor M1 is a first field effect transistor, a first electrode of the first field effect transistor is a gate, a second electrode of the first field effect transistor is a drain, and a third electrode of the first field effect transistor is a source.
The first field effect transistor may be a phemt (pseudomorphic high electron mobility transistor), specifically, a depletion-type phemt (D Mode phemt), and the power amplifier may be a depletion-type power amplifier (D Mode power amplifier).
In summary, based on the bias circuit formed by the first transistor, the first resistor, and the unidirectional conducting module, the performance degradation of the power amplifier due to process variations, temperature variations, and external power voltage fluctuations can be adaptively improved within a certain range during the application process, so that the power amplifier operates more stably.
Second embodiment
The embodiment of the present invention provides a radio frequency circuit, and fig. 4 is a schematic structural diagram of a radio frequency circuit of a power amplifier provided in an embodiment of the present application, as shown in fig. 4, the radio frequency circuit may include: a power amplifier 102, and a bias circuit as described above with reference to any of fig. 1-3. The radio frequency input end of the power amplifier 102 is connected to the first electrode of the first transistor M1 in the bias circuit, the positive power end of the power amplifier 102 is connected to the first power end VDD of the preset power supply, and the negative power end of the power amplifier 102 is grounded.
The first power terminal VDD of the preset power supply may be a positive power terminal of the preset power supply.
In this embodiment, the power amplifier 102 may amplify a signal input by the radio frequency input terminal to obtain an amplified signal, and output the amplified signal by using the radio frequency output terminal. The adaptive bias circuit connected to the power amplifier 102 can make the power amplifier 102 adaptively improve the performance deterioration caused by process deviation, temperature variation and external power supply voltage fluctuation within a certain range during the application process.
Optionally, fig. 5 is a schematic structural diagram of a radio frequency circuit of a power amplifier according to an embodiment of the present application, and as shown in fig. 5, the power amplifier 102 includes: a radio frequency input end (RFin), a radio frequency output end (RFout), a second transistor M2 and an inductor L1; a first pole of the second transistor M2 is connected to the radio frequency input terminal, a second pole of the second transistor M2 is connected to one end of the inductor, and the other end of the inductor L1 is a positive power supply terminal VDD of the power amplifier 102, and is used for connecting to a first power supply terminal of a preset power supply; the third pole of the second transistor M2 is a negative power terminal of the power amplifier 102 for grounding.
The power amplifier 102 may be a depletion mode power amplifier 102.
It should be noted that the first pole of the second transistor M2 is connected to the radio frequency input terminal through the third connection point, that is, the first pole of the second transistor M2 is connected to the third connection point, and the radio frequency input terminal is connected to the third connection point.
In the embodiment of the application, the third connection point and the second connection point change synchronously, when the VDD is reduced, the potentials of the third connection point and the second connection point are both reduced, and after the self-adaptive adjustment of the bias circuit, the potentials of the third connection point and the second connection point are both increased; when the VDD is increased, the potentials of the third connecting point and the second connecting point are increased, and after the potentials of the third connecting point and the second connecting point are adaptively adjusted through the bias circuit, the potentials of the third connecting point and the second connecting point are decreased.
Similarly, when gm is increased and Vth is decreased, the potentials of the third connection point and the second connection point are both decreased, and after the self-adaptive adjustment of the bias circuit, the potentials of the third connection point and the second connection point are both increased; when gm is decreased and Vth is increased, the potentials of the third connection point and the second connection point are both increased, and after the biasing circuit is adjusted in a self-adaptive mode, the potentials of the third connection point and the second connection point are both decreased.
Optionally, fig. 6 is a schematic structural diagram of a radio frequency circuit of a power amplifier according to an embodiment of the present application, and as shown in fig. 6, the power amplifier further includes: a first capacitor C1 and a second capacitor C2; a first pole of the second transistor M2 is connected to the rf input terminal through the first capacitor C1, and a second pole of the second transistor M2 is connected to the rf output terminal through the second capacitor C2.
Wherein the first capacitor C1 may be connected between the third connection point and the radio frequency input terminal.
In addition, the first capacitor C1 and the second capacitor C2 may function as a dc blocking. The values of the first capacitor C1 and the second capacitor C2 may be set according to actual requirements, which is not specifically limited in the embodiment of the present application.
Optionally, the second transistor is a second field effect transistor, a first electrode of the second field effect transistor is a gate, a second electrode of the second field effect transistor is a drain, and a third electrode of the second field effect transistor is a source.
The second fet may be a phemt, specifically, a depletion Mode phemt (D Mode phemt).
In the embodiment of the present application, the depletion mode power amplifier may be implemented by using a GaAs (gallium arsenide) phemt process.
In summary, the radio frequency circuit provided in the embodiment of the present application can adaptively improve performance degradation of the depletion type power amplifier due to process variation, temperature variation, and external power supply voltage fluctuation in a certain range by combining with the bias circuit in an application process, so that the depletion type power amplifier operates more stably.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A bias circuit for a power amplifier, comprising: the circuit comprises a first transistor, a first resistor and a unidirectional conduction module;
a first pole of the first transistor is connected with a radio frequency input end of the power amplifier, a second pole of the first transistor is connected with a first power end of a preset power supply through the first resistor, and a third pole of the first transistor is grounded; the anode of the unidirectional conduction module is connected with a first connection point, the cathode of the unidirectional conduction module is connected with a second connection point, and the second connection point is connected with a second power supply end of the preset power supply; the first connection point is a second pole of the first transistor, and the second connection point is a connection point between the first pole of the first transistor and the radio frequency input end of the power amplifier.
2. The circuit of claim 1, wherein the unidirectional conducting module comprises: at least one unidirectional conducting device connected in sequence;
the anode of a first one-way conduction device in the at least one-way conduction device is connected with the first connecting point; and the cathode of the last one-way conduction device in the at least one-way conduction device is connected with the second connection point.
3. The circuit of claim 1, wherein the bias circuit further comprises: a second resistor; the second resistor is connected between the first pole of the first transistor and the second connection point.
4. The circuit of claim 1, wherein the bias circuit further comprises: a third resistor; the third resistor is connected between the second connecting point and a second power supply end of the preset power supply.
5. The circuit of claim 1, wherein the bias circuit further comprises: a fourth resistor; the fourth resistor is connected between the second connection point and the radio frequency input end of the power amplifier.
6. The circuit of claim 1, wherein the first transistor is a first field effect transistor, a first pole of the first field effect transistor is a gate, a second pole of the first field effect transistor is a drain, and a third pole of the first field effect transistor is a source.
7. A radio frequency circuit, comprising: a power amplifier, and the bias circuit of any of the preceding claims 1-6;
the radio frequency input end of the power amplifier is connected with the first electrode of the first transistor in the bias circuit, the positive power end of the power amplifier is connected with the first power end of a preset power supply, and the negative power end of the power amplifier is grounded.
8. The circuit of claim 7, wherein the power amplifier comprises: the radio frequency input end, the radio frequency output end, the second transistor and the inductor are connected;
a first pole of the second transistor is connected to the radio frequency input terminal, a second pole of the second transistor is connected to one end of the inductor, and the other end of the inductor is a positive power supply terminal of the power amplifier and is used for being connected to a first power supply terminal of the preset power supply; and a third pole of the second transistor is a negative power supply end of the power amplifier and is used for grounding.
9. The circuit of claim 8, wherein the power amplifier further comprises: a first capacitor and a second capacitor;
and a first pole of the second transistor is connected with the radio frequency input end through the first capacitor, and a second pole of the second transistor is connected with the radio frequency output end through the second capacitor.
10. The circuit of claim 8, wherein the second transistor is a second fet, a first electrode of the second fet being a gate, a second electrode of the second fet being a drain, and a third electrode of the second fet being a source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202223022190.6U CN218772012U (en) | 2022-11-11 | 2022-11-11 | Bias circuit and radio frequency circuit of power amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202223022190.6U CN218772012U (en) | 2022-11-11 | 2022-11-11 | Bias circuit and radio frequency circuit of power amplifier |
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| CN218772012U true CN218772012U (en) | 2023-03-28 |
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| CN202223022190.6U Active CN218772012U (en) | 2022-11-11 | 2022-11-11 | Bias circuit and radio frequency circuit of power amplifier |
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| GR01 | Patent grant | ||
| GR01 | Patent grant |