CN218767352U - Single-transistor narrow-band microwave motion detection sensor - Google Patents
Single-transistor narrow-band microwave motion detection sensor Download PDFInfo
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- CN218767352U CN218767352U CN202221367657.8U CN202221367657U CN218767352U CN 218767352 U CN218767352 U CN 218767352U CN 202221367657 U CN202221367657 U CN 202221367657U CN 218767352 U CN218767352 U CN 218767352U
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Abstract
The utility model belongs to the technical field of the sensor, especially, a single transistor narrowband microwave motion detection sensor can not realize good electromagnetic compatibility and the too high problem of cost of production to current detector, now proposes following scheme, and it includes circuit board and microwave signal receiving and dispatching antenna, electric connection has microwave motion detection sensor circuit on the circuit board, microwave motion detection sensor circuit includes single transistor narrowband oscillation & mixing circuit, intermediate frequency signal amplification and signal processing circuit, the utility model provides a single transistor narrowband microwave motion detection sensor, narrowband work have good electromagnetic compatibility, save mixing diode simplified circuit structure simultaneously, reduce PCB area occupied, reduction in production cost.
Description
Technical Field
The utility model relates to a sensor technology field especially relates to a single transistor narrow-band microwave motion detection sensor.
Background
Along with the development of the internet of things technology, the requirements of intelligent home and intelligent security technology on environment detection, particularly on the accuracy of human movement and micro motion characteristic detection are higher and higher, and only if a detection result which is stable enough is obtained, an accurate judgment basis can be provided for the intelligent terminal equipment. The microwave detection technology based on the Doppler effect principle has unique advantages in the motion and existence detection technology as an important hub of the Internet of things, can detect moving objects such as the movement, micromotion, heartbeat and respiration characteristics of people without invading the privacy of people, and has wide application prospect.
Further, in ISM band licensed by ITU-R, frequency bands mainly used for microwave detection are 2.4GHz, 5.8GHz, 10.525GHz, 24.125GHz, etc., and it is specified that the corresponding microwave detector needs to comply with a certain transmission power to reduce interference to other radio devices. How to achieve accurate and sensitive mobile detection at small transmit power is a serious challenge currently facing. In an intelligent home, the following problems exist in most microwave motion sensors in the current market: the traditional microwave motion sensor working in narrow frequency band needs a transistor for generating narrow frequency band microwave signals and a diode for mixing frequency function, and the scheme has the problems of complex circuit structure and higher production cost; another traditional single-transistor microwave motion sensor uses an emitter of a single transistor to connect a microstrip antenna in series with an RC circuit to receive and transmit microwave signals, the RC circuit can charge and discharge during operation to cause the change of the operating point of the transistor, so that the transistor oscillates in a pulse mode, a broadband radiation signal occupying a frequency band greater than 10MHz is formed, and interference is easily generated on other sensors and wireless equipment. The first of the two traditional schemes must use a diode for frequency mixing, so that the problems of high cost, large PCB area and complex circuit exist; the microwave signal frequency band of the second output is not a narrow frequency band, and the electromagnetic compatibility problem exists. With the demand of miniaturization of electronic products, how to reduce the size of the mobile microwave sensor, simplify the structure, reduce the cost, and reduce the radiation stray becomes an urgent technical problem to be solved, so we propose a single-transistor narrow-band microwave motion detection sensor to solve the above-mentioned problems.
SUMMERY OF THE UTILITY MODEL
The utility model aims at solving the shortcoming that the existing detector can not realize good electromagnetic compatibility and overhigh production cost in the prior art, and providing a single-transistor narrow-band microwave motion detection sensor.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
a single-transistor narrow-band microwave motion detection sensor comprises a circuit board and a microwave signal receiving and transmitting antenna, wherein a microwave motion detection sensor circuit is electrically connected to the circuit board and comprises a single-transistor narrow-band oscillation and mixing circuit and an intermediate frequency signal amplification and signal processing circuit.
Preferably, the microwave motion sensor circuit includes a transistor Q1, a resistor R2, a resistor R3, a capacitor C1, a capacitor C2, a capacitor C3, a microstrip matching network L1, and a feedback network, one end of each of the resistor R1 and the resistor R2 is electrically connected to a VCC feed terminal, the other end of the resistor R2 is electrically connected to a dc blocking capacitor C3, the feedback network, the resistor R3, and a base of the transistor Q1, the other end of the resistor R1 is electrically connected to the other end of the feedback network and a collector of the transistor Q1, an emitter of the transistor Q1 is grounded, the other end of the resistor R3 is electrically connected to one end of the capacitor C1 and the intermediate frequency amplification and signal processing circuit, the other end of the capacitor C1 is grounded, the other end of the capacitor C3 is electrically connected to the microstrip matching network L1, and the other end of the microstrip matching network L1 is electrically connected to the microwave signal transceiving antenna.
Preferably, the output signal of the single-transistor narrow-band oscillation and mixing circuit is a signal with a 3dB operating band less than 100KHz, the intermediate-frequency signal amplification and processing circuit is a circuit formed by taking an operational amplifier and a signal processor as cores, the single-transistor narrow-band oscillation and mixing circuit and the intermediate-frequency signal amplification and processing circuit are mounted on a circuit board, and the microwave signal transmitting and receiving antenna is a microstrip antenna, and may be in other antenna forms.
Preferably, the resistance R3 has a larger impedance than the impedance of the microwave signal transmitting/receiving antenna.
Preferably, the capacitor C3 is a high-frequency dc blocking capacitor.
Preferably, the transistor Q1 is a microwave transistor, and a collector and a base of the transistor Q1 are both connected to the feedback network.
Has the advantages that:
1. the utility model discloses in, use single transistor to produce microwave motion sensor's narrow band microwave signal, transmission, receipt and frequency conversion, and traditional narrow band microwave motion sensor needs 1 transistor, 1 mixing diode just can realize the same function, this technical scheme adopts microwave signal receiving and dispatching antenna to form transmission and receipt to the signal, directly carry out the mixing to narrow band microwave receiving and dispatching signal with single transistor and produce intermediate frequency signal, owing to save a mixing diode, make the circuit simplify more, the PCB area is littleer, lower cost.
2. The utility model discloses in, compare traditional technical scheme "a 5.8GHz single transistor microwave mobile sensor" adopt emitter resonance transmission microstrip line series connection RC parallel circuit output >10MHz broadband microwave signal, the microwave signal that this technical scheme's transistor narrowband oscillation produced is the narrowband signal, has 3dB bandwidth <100 KHz's extremely narrow operating frequency band signal, consequently can not produce electromagnetic interference to other microwave motion sensors, electronic equipment, has good electromagnetic compatibility performance.
3. The utility model provides a single transistor narrow-band microwave motion detection sensor can be through adopting multilayer circuit board design microwave motion sensor, the effectual PCB area occupied that reduces for the product is miniaturized.
4. The utility model discloses in, microwave motion sensor, be applicable to ISM frequency channels such as 2.4GHz, 5.8GHz, 10.525GHz, 24.125 GHz.
The utility model provides a single transistor narrowband microwave motion detection sensor, narrowband work have good electromagnetic compatibility, save the mixing diode simultaneously and simplify circuit structure, reduce PCB area occupied, reduction in production cost.
Drawings
Fig. 1 is a schematic circuit diagram of a single-transistor narrow-band microwave motion detection sensor according to the present invention;
fig. 2 is a layout diagram of a PCB structure of a single-transistor narrow-band microwave motion detection sensor according to the present invention;
fig. 3 is a laminated diagram of a structural circuit board of a single-transistor narrow-band microwave motion detection sensor according to the present invention;
FIG. 4 is a stacked view of a single-transistor narrow-band microwave motion detection sensor employing a dome antenna;
fig. 5 is a stacked view of a single-transistor narrow-band microwave motion detection sensor employing a needle antenna.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments.
Example one
Referring to fig. 1-5, a single-transistor narrow-band microwave motion detection sensor includes a circuit board and a microwave signal transceiving antenna, the circuit board has a microwave motion detection sensor circuit, the microwave motion detection sensor circuit includes a single-transistor narrow-band oscillation and mixing circuit and an intermediate frequency signal amplification and signal processing circuit, and the microwave signal transceiving antenna may be a microstrip transceiving antenna designed on the circuit board or may take other antenna forms.
The utility model discloses in, microwave motion sensor circuit includes transistor Q1, resistance R2, resistance R3, electric capacity C1, electric capacity C2, electric capacity C3, microstrip matching network L1 and feedback network, resistance R1 and resistance R2's one end all with VCC feed end electric connection, resistance R2's the other end respectively with separate direct electric capacity C3, feedback network, resistance R3 and transistor Q1's base electric connection, electricityThe other end of the resistor R1 is respectively electrically connected with the other end of the feedback network and the collector of the transistor Q1, the emitter of the transistor Q1 is grounded, the other end of the resistor R3 is respectively electrically connected with one end of the capacitor C1 and the intermediate frequency amplification and signal processing circuit, the other end of the capacitor C1 is grounded, the other end of the capacitor C3 is electrically connected with the microstrip matching network L1, the other end of the microstrip matching network L1 is electrically connected with the microwave signal transceiving antenna, the feedback network is a feedback network between the source and the base, the feedback network is a circuit meeting phase and amplitude requirements required by oscillation conditions of working frequency points of transistors, oscillation frequency works in a designed ISM frequency band through reasonably designed feedback coefficients and feedback phases, the transistor Q1 plays roles of oscillation and frequency mixing, oscillation can be generated through the feedback network to generate microwave signals, local oscillation signals can be provided for transistor frequency mixing, when the microstrip transceiving antenna is adopted, the circuit board and the transceiving antenna are electrically connected through metal through holes in a multilayer circuit board, and the microstrip transceiving antenna is arranged on the circuit boardCircuit boardThe microwave signal transceiving antenna of the microwave motion sensor is not limited to a microstrip plane antenna, other antenna forms can be adopted, and the circuit board is electrically connected with the transceiving antenna through metal through holes on a multilayer circuit board.
The utility model discloses in, single transistor narrowband oscillation & mixing circuit output signal are less than 100 KHz's signal for 3dB working band, microwave signal receiving and dispatching antenna is microstrip receiving and dispatching antenna, also can be for other antenna forms, intermediate frequency signal enlargies and the processing circuit is the circuit that operational amplifier and signal processor constitute for the core, single transistor narrowband oscillation & mixing circuit, intermediate frequency signal enlarge and processing circuit installs on the circuit board, microwave signal receiving and dispatching antenna is microstrip antenna, also can be for other antenna forms.
The utility model discloses in, resistance R3's impedance is great than the impedance of microwave signal receiving and dispatching antenna.
The utility model discloses in, electric capacity C3 is high frequency blocking electric capacity.
The utility model discloses in, transistor Q1 is the microwave transistor, and transistor Q1's collecting electrode all is connected with the feedback network with the base, transistor Q1 produces the microwave local oscillator signal of work frequency point, some local oscillator signal is received through microwave signal receiving and dispatching antenna feed-in microwave signal and then to aerial radiation signal by transistor Q1's base through electric capacity C3 and microstrip matching network L1, the Doppler shift signal of moving object reflection in the radiation field simultaneously receives through microwave signal receiving and dispatching antenna, input microwave transistor Q1's base through microstrip matching network and C3, this received signal and another part local oscillator signal carry out the mixing through the PN junction of transistor Q1 base and projecting pole, produce the intermediate frequency signal that contains the motion information, the intermediate frequency signal that contains the motion information that transistor Q1 base produced, through electric capacity R3, electric capacity C1 constitutes the low pass filter after input intermediate frequency amplify and the signal processing circuit, amplify and judge the back output logic control signal.
In this example, the resistor R1 is 50-20O Ω, the resistor R2 is 10-20K Ω, the resistor R3 is 500-2K Ω, the capacitor C3 is 10-100pF, the capacitor C2 is 100-1000pF, and the capacitor C1 is 10-330nF.
The utility model discloses in, single transistor Q1 acts as the oscillation & the mixer, and the intermediate frequency signal from base mixing output gets into intermediate frequency amplifier circuit through a resistance R3 who is far above microstrip receiving and dispatching antenna impedance, and resistance R3 also can keep apart radio frequency signal and intermediate frequency port with the inductance, has guaranteed that the signal power who exports the antenna is not attenuated.
The utility model discloses in, the intermediate frequency signal that contains the motion information that transistor Q1 mixing produced, through transistor Q1's base, the RC filter circuit that connecting resistance R3, electric capacity C1 constitute gets into the operational amplification circuit that has the operational amplification function, and the signal is carried out signal judgment and is handled by MCU or logic chip after enlarging.
Referring to fig. 2 and 3, the mobile microwave sensor in this embodiment is formed by a multi-layer board process and an intermediate frequency signal amplification and signal processing circuit, and is implemented by a four-layer board process, including a circuit board, a first ground layer, a second ground layer, and an antenna layer, where the circuit board is connected to the antenna layer through a metal via, and the second ground layer can be selectively removed or retained.
Example two
The other antenna scheme of the present invention, such as the antenna shown in fig. 4 or fig. 5, can be implemented by using a two-layer board process, including a circuit board, a ground layer, and a spring plate or a needle antenna. The circuit board is connected with the antenna through the metal through hole.
The above, only be the concrete implementation of the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the utility model, the concept of which is equivalent to replace or change, should be covered within the protection scope of the present invention.
Claims (4)
1. The utility model provides a single-transistor narrow-band microwave motion detection sensor, includes circuit board and microwave signal receiving and dispatching antenna, the last electric connection of circuit board has microwave motion detection sensor circuit, its characterized in that: the microwave motion detection sensor circuit comprises a single-transistor narrow-band oscillation and mixing circuit, an intermediate frequency signal amplification and signal processing circuit, wherein the single-transistor narrow-band oscillation and mixing circuit comprises a transistor Q1, a resistor R2, a resistor R3, a capacitor C1, a capacitor C2, a capacitor C3, a microstrip matching network L1 and a feedback network, one ends of the resistor R1 and the resistor R2 are electrically connected with a VCC feed end, the other end of the resistor R2 is electrically connected with a DC blocking capacitor C3, the feedback network, the resistor R3 and a base electrode of the transistor Q1 respectively, the other end of the resistor R1 is electrically connected with the other end of the feedback network and a collector electrode of the transistor Q1 respectively, an emitter electrode of the transistor Q1 is grounded, the other end of the resistor R3 is electrically connected with one end of the capacitor C1 and the intermediate frequency signal amplification and signal processing circuit respectively, the other end of the capacitor C1 is grounded, the other end of the capacitor C3 is connected with the microstrip matching network L1, the other end of the microstrip matching network L1 is electrically connected with a receiving and transmitting and receiving antenna of the microwave signal processing circuit, the single-transistor narrow-band oscillation and the intermediate frequency signal processing circuit are mounted on the intermediate frequency signal processing circuit board and are respectively, and are respectively smaller than a single-transistor narrow-frequency signal processing circuit.
2. A one-transistor narrow-band microwave motion-detecting sensor in accordance with claim 1, wherein the resistance R3 has a higher impedance than the impedance of the microwave signal-transceiving antenna.
3. A single-transistor narrow-band microwave motion detection sensor according to claim 2 in which the capacitor C3 is a high frequency dc blocking capacitor.
4. A single-transistor narrow-band microwave motion detection sensor according to claim 2, wherein the transistor Q1 is a microwave transistor, and the collector and base of the transistor Q1 are connected to a feedback network.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220468091 | 2022-03-04 | ||
| CN2022204680911 | 2022-03-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218767352U true CN218767352U (en) | 2023-03-28 |
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221367657.8U Active CN218767352U (en) | 2022-03-04 | 2022-06-01 | Single-transistor narrow-band microwave motion detection sensor |
| CN202210621653.6A Withdrawn CN115032702A (en) | 2022-03-04 | 2022-06-01 | Single-transistor narrow-band microwave motion detection sensor |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210621653.6A Withdrawn CN115032702A (en) | 2022-03-04 | 2022-06-01 | Single-transistor narrow-band microwave motion detection sensor |
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| Country | Link |
|---|---|
| CN (2) | CN218767352U (en) |
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2022
- 2022-06-01 CN CN202221367657.8U patent/CN218767352U/en active Active
- 2022-06-01 CN CN202210621653.6A patent/CN115032702A/en not_active Withdrawn
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| CN115032702A (en) | 2022-09-09 |
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