CN209198643U - A kind of 5.8GHz single-transistor microwave motion sensor - Google Patents
A kind of 5.8GHz single-transistor microwave motion sensor Download PDFInfo
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- CN209198643U CN209198643U CN201821653377.7U CN201821653377U CN209198643U CN 209198643 U CN209198643 U CN 209198643U CN 201821653377 U CN201821653377 U CN 201821653377U CN 209198643 U CN209198643 U CN 209198643U
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Abstract
The utility model discloses a kind of 5.8GHz single-transistor microwave motion sensors, microwave motion sensor circuit including circuit board and on the circuit board, the microwave motion sensor circuit includes concussion mixing unit and signal transmitting and receiving unit, the concussion mixing unit and signal transmitting and receiving unit are respectively arranged at the circuit layer and antenna stack of multilayer circuit board, the concussion mixing unit is a triode, the signal transmitting and receiving unit is a micro-strip dual-mode antenna, the triode is set to the circuit layer, and the micro-strip dual-mode antenna is set to the antenna stack.The utility model completes signal transmitting, reception and the frequency conversion of 5.8GHz microwave motion sensor using a transistor, more than two transistor functions are needed with traditional 5.8GHz microwave motion sensor, using the transmitting and reception of single microstrip antenna shape pair signals, simplify circuit more, cost is cheaper, application easy to spread.
Description
Technical field
The utility model relates to sensor technical fields, more particularly to a kind of 5.8GHz single-transistor microwave mobile sensor
Device.
Background technique
Microwave motion sensor is to patch day using media resonant oscillator and micro-strip by Doppler effect transceiver module
Line technology realizes low-power consumption, high-temperature stability, high sensitivity and flat appearance, is the mobile detection of ideal low cost
Device.Extensive infrared+microwave dual technology detector, microwave-infrared moving detector, automatically-controlled door inductor, light control switch, it is antitheft
Wrong report can be effectively reduced commonly used in burglary-resisting system, this module and infrared sensor ratio of components are detected in alarm etc..It is micro-
Wave is the electromagnetic wave that wavelength is 1~1000mm, it had not only had the property of electromagnetic wave, but also was different from common radio wave and light wave.
Microwave has following features relative to longer wavelengths of electromagnetic wave: 1. directed radiation devices are easy to manufacture；2. encountering working barrier
Object is easy to reflect；3. diffracting power is poor；4. transmission performance is good, by the shadow of cigarette, flame, dust, strong light etc. in transmission process
Ring very little；5. medium is proportional to the absorption of microwave and the dielectric constant of medium, water is most strong to the absorbability of microwave.Exactly this
A little features constitute the basis of microwave detection.
With the development of smart home technology and security and guard technology, microwave motion sensor is increasingly used in intelligent family
Technology and field of security technology are occupied, microwave motion sensor is used to detect mobile object in smart home, in smart home,
The moving Object Detection sensor of 5.8GHzISM frequency range is generally used, still, the most of 5.8GHz microwave of existing market is mobile
There are the following problems for sensor: the transistor that traditional 5.8GHz microwave motion sensor needs a microwave signal being used as to generate
And a diode as mixting circuit, this scheme have circuit structure complicated and the higher problem of production cost, then
Person, as electronic product tends to demand miniaturization, how reducing the volume of mobile microwave sensor and simplifying structure becomes urgently
Technical problem to be solved.
Utility model content
The purpose of the utility model is to overcome shortcomings in the prior art, provide a kind of 5.8GHz single-transistor microwave
Movable sensor simplifies circuit structure and reduces small product size, reduces production cost.
In order to solve the above technical problems, the utility model is solved by following technical proposals:
A kind of 5.8GHz single-transistor microwave motion sensor, the microwave including circuit board and on the circuit board move
Dynamic sensor circuit, the microwave motion sensor circuit include concussion mixing unit and signal transmitting and receiving unit, and the concussion is mixed
Frequency unit and signal transmitting and receiving unit are respectively arranged at the circuit layer and antenna stack of multilayer circuit board.
Further, the concussion mixing unit is a triode, and the signal transmitting and receiving unit is a micro-strip transmitting-receiving
Antenna, the triode are set to the circuit layer, and the micro-strip dual-mode antenna is set to the antenna stack.
Further, the microwave motion sensor circuit includes triode Q1, resistance R1, resistance R2, resistance R3, resistance
R4, capacitor C1, capacitor C2, microstrip line L1, microstrip line L2, microstrip line L3 and microstrip line L4, the one of the resistance R1 and resistance R2
DC feedback end is held while connecting, the other end of the resistance R1 connects the base stage of microstrip line L2 and triode Q1 simultaneously, described
The other end of resistance R2 connects the collector of microstrip line L1 and triode Q1 simultaneously, and the emitter of the triode Q1 connects simultaneously
The other end of one end of microstrip line L3, microstrip line L4, microstrip line L5 and resistance R4, the microstrip line L4 connects capacitor C1 simultaneously
One end and resistance R3 one end, the other end ground connection of the capacitor C1 and resistance R3, the other end connection of the microstrip line L5
The micro-strip dual-mode antenna, the other end of the resistance R4 connect one end and the medium frequency output end of capacitor C2, the capacitor simultaneously
The other end of C2 is grounded.
Further, the resistance of the resistance R4 is greater than the resistance of the micro-strip dual-mode antenna.
Further, the microstrip line L1 is quarter-wave open circuit microstrip line.
Further, the resistance of the resistance R4 is 1Kohm.
Further, the size of the capacitor C1 is 10Pf, and the size of resistance R3 is 200ohm.
Further, the circuit layer and antenna stack are electric by the antenna feed electric through-hole being opened on the multilayer circuit board
Property connection.
The utility model have the following advantages that compared with prior art and the utility model has the advantages that
1. the utility model is completed the signal transmitting of 5.8GHz microwave motion sensor using a transistor, receives and become
Frequently, there are the more than two transistor functions of tradition 5.8GHz microwave motion sensor needs, formed pair using single microstrip antenna
The transmitting and reception of signal simplify circuit more, and cost is cheaper.
2. the utility model is in series with RC parallel-connection structure on external resonance line, so that radiofrequency signal is unaffected, it is right
Open circuit is presented in intermediate-freuqncy signal, and resistance R provides the DC loop of transistor, effectively stabilizes the quiescent point of transistor, have
Effect prevents output intermediate frequency by the external resonance line short circuit of source electrode, effectively increases the stability of mobile microwave sensor.
3. the microwave motion sensor of the utility model by using multilayer circuit board rational deployment and devises microwave shifting
The circuit structure of dynamic sensor, effectively reduces small product size, has adapted to the demand of miniaturization of products design.
Detailed description of the invention
Utility model will be further described in detail below with reference to the attached drawings and specific embodiments.
Fig. 1 is a kind of circuit diagram of 5.8GHz single-transistor microwave motion sensor.
Fig. 2 is a kind of PCB layout of 5.8GHz single-transistor microwave motion sensor.
Fig. 3 is a kind of circuit layer structure schematic diagram of 5.8GHz single-transistor microwave motion sensor.
Specific embodiment
The present invention will be further described in detail with reference to the embodiments and the accompanying drawings, but the implementation of the utility model
Mode is without being limited thereto.
The specific implementation process of the utility model is as follows:
As shown in Figure 1 to Figure 3, a kind of 5.8GHz single-transistor microwave motion sensor, including circuit board and be set to described
Microwave motion sensor circuit on circuit board, the microwave motion sensor circuit include concussion mixing unit and signal transmitting and receiving
Unit, the concussion mixing unit and signal transmitting and receiving unit are respectively arranged at the circuit layer and antenna stack of multilayer circuit board.
The concussion mixing unit is a transistor, and the transistor completes concussion and mixing function, institute in circuit
Stating signal transmitting and receiving unit is a micro-strip dual-mode antenna, and the micro-strip dual-mode antenna completes the transmitting and reception of signal in circuit
Function, the transistor are set to the circuit layer, and the micro-strip dual-mode antenna is set to the antenna stack, the antenna stack with
Circuit layer is electrically connected by feed through-hole.
The microwave motion sensor circuit includes triode Q1, resistance R1, resistance R2, resistance R3, resistance R4, capacitor
C1, capacitor C2, microstrip line L1, microstrip line L2, microstrip line L3 and microstrip line L4, the resistance R1 and resistance R2 one end connect simultaneously
DC feedback end is connect, the other end of the resistance R1 connects the base stage of microstrip line L2 and triode Q1 simultaneously, the resistance R2's
The other end connects the collector of microstrip line L1 and triode Q1 simultaneously, and the emitter of the triode Q1 connects microstrip line simultaneously
One end of L3, microstrip line L4, microstrip line L5 and resistance R4, the other end of the microstrip line L4 connect simultaneously capacitor C1 one end and
The other end of one end of resistance R3, the capacitor C1 and resistance R3 are grounded, and the other end of the microstrip line L5 connects the micro-strip
Dual-mode antenna, the other end of the resistance R4 connect one end and the medium frequency output end of capacitor C2 simultaneously, and the capacitor C2's is another
End ground connection.In the present embodiment, the microstrip line L1 is quarter-wave open circuit microstrip line, and microstrip line L2 is open-grid micro-strip
Line, microstrip line L3 are emitter micro-band resonance line, and microstrip line L4 is external resonance line, and the microstrip line L5 connection micro-strip receives and dispatches day
Line makes oscillator oscillation frequency by designing the external micro-strip line length of reasonable grid and the external feedback resonance micro-strip line length of source electrode
Rate meets the ISM band requirement of 5.8GHz.The circuit layer and antenna stack pass through the antenna that is opened on the multilayer circuit board
It feeds through-hole to be electrically connected, dual-mode antenna is set on the antenna stack, has transmitting microwave signal and receives echo-signal
Function, the triode Q1 play the role of concussion and mixing, can not only generate microwave signal, and can give mobile microwave
Sensor provides local oscillation signal.The micro-strip dual-mode antenna obtains transmitting signal by being linked into the source electrode of the triode Q1,
And by the aerial radiation microwave signal, micro-strip dual-mode antenna receives the reflection echo signal of extraneous target simultaneously, and signal is anti-
The source electrode of triode Q1 described in the feed-in of direction completes mixing function using the nonlinear characteristic of triode Q1.
In the present embodiment, it is preferred that the resistance R1 is 15KOhm, and resistance R2 is 33Ohm, and resistance R4 is 1Kohm, institute
The size for stating capacitor C1 is 10Pf, and the size of resistance R3 is 200ohm, and one end is series at after the capacitor C2 is in parallel with resistance R3
On the external resonance line L4, other end ground connection, output intermediate frequency is short-circuit by the external resonance line of triode Q1 source electrode in order to prevent, because
This, a RC parallel network of connecting on external resonance line L4, the presence of suitable capacitor C makes radiofrequency signal unaffected,
Intermediate-freuqncy signal is presented and is opened a way, resistance R provides the DC loop of triode Q1, and can stablize the quiescent operation of triode Q1
Point effectively increases the stability of mobile microwave sensor.
In the present embodiment, for triode Q1 as multiplexing oscillation/frequency mixer, the intermediate-freuqncy signal for being mixed output is remote high by one
It is exported in the resistance R4 of micro-strip dual-mode antenna radiation impedance, the resistance R4 can also be substituted with inductance, the resistance of higher resistance
Or inductance can isolate radiofrequency signal and reveal from intermediate frequency port, ensure that the integrality of signal.
Fig. 2 and Fig. 3 are please referred to, the mobile microwave sensor in the present embodiment is improved using multi-layer board technique and intermediate-freuqncy signal
Circuit integration, it is preferred that realized using three ply board, including circuit layer, middle layer stratum and antenna stack, the circuit layer and antenna
Layer is FR4 dielectric layer, and circuit layer is connect by antenna feed electric through-hole with antenna stack, so that circuit layout is more reasonable, structure
It is more compact, the volume of sensor is reduced, production cost is reduced.
Above-described embodiment is the preferable embodiment of the utility model, but the embodiments of the present invention is not by above-mentioned
The limitation of embodiment, it is made under other any spiritual essence and principles without departing from the utility model to change, modify, replacing
In generation, simplifies combination, should be equivalent substitute mode, is included within the protection scope of the utility model.
Claims (8)
1. a kind of 5.8GHz single-transistor microwave motion sensor, the microwave including circuit board and on the circuit board is mobile
Sensor circuit, it is characterised in that: the microwave motion sensor circuit includes concussion mixing unit and signal transmitting and receiving unit, institute
It states concussion mixing unit and signal transmitting and receiving unit is respectively arranged at the circuit layer and antenna stack of multilayer circuit board.
2. a kind of 5.8GHz single-transistor microwave motion sensor according to claim 1, it is characterised in that: the concussion
Mixing unit is a triode, and the signal transmitting and receiving unit is a micro-strip dual-mode antenna, and the triode is set to described
Circuit layer, the micro-strip dual-mode antenna are set to the antenna stack.
3. a kind of 5.8GHz single-transistor microwave motion sensor according to claim 2, it is characterised in that: the microwave
Movable sensor circuit includes triode Q1, resistance R1, resistance R2, resistance R3, resistance R4, capacitor C1, capacitor C2, microstrip line
L1, microstrip line L2, microstrip line L3 and microstrip line L4, the resistance R1 and resistance R2 one end connect DC feedback end, institute simultaneously
It states the other end of resistance R1 while connecting the base stage of microstrip line L2 and triode Q1, the other end of the resistance R2 connects micro- simultaneously
The emitter of collector with line L1 and triode Q1, the triode Q1 connects microstrip line L3, microstrip line L4, microstrip line simultaneously
The other end of one end of L5 and resistance R4, the microstrip line L4 connects one end of capacitor C1 and one end of resistance R3 simultaneously, described
The other end of the other end of capacitor C1 and resistance R3 ground connection, the microstrip line L5 connects the micro-strip dual-mode antenna, the resistance
The other end of R4 connects one end and the medium frequency output end of capacitor C2, the other end ground connection of the capacitor C2 simultaneously.
4. a kind of 5.8GHz single-transistor microwave motion sensor according to claim 3, it is characterised in that: the resistance
The resistance of R4 is greater than the resistance of the micro-strip dual-mode antenna.
5. a kind of 5.8GHz single-transistor microwave motion sensor according to claim 3, it is characterised in that: the micro-strip
Line L1 is quarter-wave open circuit microstrip line.
6. a kind of 5.8GHz single-transistor microwave motion sensor according to claim 3, it is characterised in that: the resistance
The resistance of R4 is 1Kohm.
7. a kind of 5.8GHz single-transistor microwave motion sensor according to claim 3, it is characterised in that: the capacitor
The size of C1 is 10Pf, and the size of resistance R3 is 200ohm.
8. a kind of 5.8GHz single-transistor microwave motion sensor according to any one of claims 1 to 7, feature exist
It is electrically connected in: the circuit layer and antenna stack by the antenna feed electric through-hole being opened on the multilayer circuit board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821653377.7U CN209198643U (en) | 2018-10-12 | 2018-10-12 | A kind of 5.8GHz single-transistor microwave motion sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821653377.7U CN209198643U (en) | 2018-10-12 | 2018-10-12 | A kind of 5.8GHz single-transistor microwave motion sensor |
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| CN209198643U true CN209198643U (en) | 2019-08-02 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109143176A (en) * | 2018-10-12 | 2019-01-04 | 深圳市易探科技有限公司 | A kind of 5.8GHz single-transistor microwave motion sensor |
| CN113866722A (en) * | 2021-12-02 | 2021-12-31 | 希斯塔(南京)电子技术有限公司 | Planar microwave sensor |
-
2018
- 2018-10-12 CN CN201821653377.7U patent/CN209198643U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109143176A (en) * | 2018-10-12 | 2019-01-04 | 深圳市易探科技有限公司 | A kind of 5.8GHz single-transistor microwave motion sensor |
| CN113866722A (en) * | 2021-12-02 | 2021-12-31 | 希斯塔(南京)电子技术有限公司 | Planar microwave sensor |
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