CN218766698U - Wafer defect detection equipment - Google Patents

Wafer defect detection equipment Download PDF

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Publication number
CN218766698U
CN218766698U CN202223210008.XU CN202223210008U CN218766698U CN 218766698 U CN218766698 U CN 218766698U CN 202223210008 U CN202223210008 U CN 202223210008U CN 218766698 U CN218766698 U CN 218766698U
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China
Prior art keywords
baffle
subassembly
laser emission
rod
regulating rod
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CN202223210008.XU
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Chinese (zh)
Inventor
黄炫
韦虎
倪化生
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Hefei Zhongke Xinghan Technology Co ltd
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Hefei Zhongke Xinghan Technology Co ltd
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Abstract

The utility model discloses a wafer defect check out test set, concretely relates to wafer production and processing field, including examining test table, examine test table surface mid-mounting and have the pivoted positioning disk, be equipped with the baffle of fixing in examining test table edge in the positioning disk both sides, a serial communication port, install horizontal slip's laser emission subassembly on the inside wall that two baffles are close to mutually, install regulating rod spare on the baffle inside wall that is located laser emission subassembly below, regulating rod spare and laser emission subassembly all extend to positioning piece one side, be equipped with the detection subassembly in the top of positioning disk, the height that detects the subassembly is higher than regulating rod spare and laser emission subassembly, install detachable spotlight component at regulating rod spare's tip. The utility model discloses a route in-process of marcing at infrared source sets up removable cylindrical lens, can carry out spotlight to infrared source to improve equipment's light utilization ratio and detection efficiency improve and detect the precision, improved the practicality.

Description

Wafer defect detection equipment
Technical Field
The utility model relates to a wafer production and processing field, more specifically says, the utility model relates to a wafer defect detecting equipment.
Background
In the semiconductor industry, infrared industrial cameras can be used to detect the quality of pure semiconductor materials. In addition, defects or cracks can be detected in a similar manner in the silicon ingot and the finished wafer cut into chips. An infrared camera is used to match with a light source with the emission wavelength of 1000-1550nm, so that the internal impurities and the structure of the silicon ingot or the silicon brick can be easily detected.
The principle is that the semiconductor material does not absorb short-wave infrared photons with low energy and longer wavelength, while visible photons are absorbed by the material and cannot penetrate due to the higher energy and shorter wavelength. The infrared camera becomes an excellent detection tool for semiconductor detection, and defects, impurities, holes or impurities can be directly detected.
Impurities in the ingot can cause damage to the production equipment as the ingot is further processed into wafers. Through the detection of the infrared camera, similar problems can be effectively avoided, thereby ensuring higher production efficiency. However, in the wafer defect detection process, the whole upper part of the detection table is in an open environment, so that the utilization rate of the light source in the detection process is low, and the cost is high.
SUMMERY OF THE UTILITY MODEL
For solving the technical problem, the utility model provides a crystal cell defect detection equipment, including examining test table, examine test table surface mid-mounting and have the pivoted positioning disk, be equipped with the baffle of fixing in examining test table edge in the positioning disk both sides, install horizontal slip's laser emission subassembly on the inside wall that two baffles are close to mutually, install regulating rod spare on the baffle inside wall that is located laser emission subassembly below, regulating rod spare and laser emission subassembly all extend to spacer one side, be equipped with the detection subassembly in the top of positioning disk, the height that detects the subassembly is higher than regulating rod spare and laser emission subassembly, detachable spotlight component is installed at regulating rod spare's tip.
In a preferred embodiment, the laser emitting assembly comprises a slide rail fixed on the inner side wall of the baffle and a slide block sliding in the slide rail, a connecting rod extending outwards is installed on the slide block, and a rotating laser head is installed at the end of the connecting rod.
In a preferred embodiment, a servo push rod is fixedly installed at the edge of the baffle, the height of the servo push rod is the same as that of the slide rail, and the end of an output shaft of the servo push rod extends into the slide rail and is fixedly connected with the slide block.
In a preferred embodiment, the adjusting rod comprises two damping rotating shafts located below the sliding rail and two hanging rods installed on the inner side wall of the baffle through the damping rotating shafts, the other ends of the two hanging rods extend to one side of the positioning disk, and the light gathering assembly is installed at the end of each hanging rod.
In a preferred embodiment, the light condensing assembly comprises an inner baffle, an outer baffle and a fixed screw pipe which are sequentially arranged on the surface of the end portion of the hanging rod, the inner baffle and the fixed screw pipe are fixed on the surface of the hanging rod, the outer baffle slides between the inner baffle and the fixed screw pipe, an adjusting screw rod extending towards one side of the outer baffle is inserted in the fixed screw pipe, a bearing is installed on the outer wall of the outer baffle, which is close to one side of the adjusting screw rod, the adjusting screw rod is inserted in the bearing, and a knob is installed at the outer end of the adjusting screw rod.
In a preferred embodiment, a cylindrical lens is connected between the two hanging rods, and two ends of the cylindrical lens are respectively positioned between the inner baffle and the outer baffle on the surfaces of the two hanging rods.
In a preferred embodiment, a protective cushion is mounted on the outer wall of the inner baffle and the outer baffle, which are close to each other, and the protective cushion is attached to the outer wall of the end of the cylindrical lens.
In a preferred embodiment, the outer walls of the two baffle plates are provided with support plates extending upwards, a top plate is connected between the top ends of the two support plates, and the bottom of the top plate is provided with infrared detection heads extending downwards, wherein the infrared detection heads are positioned right above the positioning plate.
The utility model discloses a technological effect and advantage:
the utility model discloses a route in-process of marcing at infrared source sets up removable cylindrical lens, can carry out spotlight to infrared source to improve equipment's light utilization ratio and detection efficiency improve and detect the precision, improved the practicality.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a front view of the present invention;
fig. 3 is a schematic diagram of a detailed structure of the position a in fig. 1 according to the present invention.
Description of reference numerals: the device comprises a detection table 1, a positioning disc 2, a baffle 3, a slide rail 4, a slide block 5, a connecting rod 6, a laser head 7, a servo push rod 8, a damping rotating shaft 9, a hanging rod 10, an inner baffle 11, an outer baffle 12, a fixed solenoid 13, an adjusting screw 14, a bearing 15, a knob 16, a cylindrical lens 17, a protective cushion layer 18, a supporting plate 19, a top plate 20 and an infrared detection head 21.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. The embodiments of the present invention have been presented for purposes of illustration and description, and are not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiment was chosen and described in order to best explain the principles of the invention and the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated.
A crystal cell defect detecting device as shown in fig. 1-3, which comprises a detecting table 1, wherein a rotating positioning disc 2 is arranged in the middle of the surface of the detecting table 1, baffle plates 3 fixed at the edge of the detecting table 1 are arranged on two sides of the positioning disc 2, laser emitting assemblies sliding left and right are arranged on the inner side walls of the two baffle plates 3 close to each other, an adjusting rod is arranged on the inner side wall of the baffle plate 3 positioned below the laser emitting assemblies, the adjusting rod and the laser emitting assemblies both extend to one side of a positioning sheet, a detecting assembly is arranged above the positioning disc 2, the height of the detecting assembly is higher than that of the adjusting rod and the laser emitting assemblies, and a detachable light condensing assembly is arranged at the end part of the adjusting rod;
wherein, positioning disk 2 is rotatable structure, and in positioning disk 2 was arranged in to the wafer, carrying out the testing process, positioning disk 2 rotated and drives the wafer rotation and carry out the defect detection.
Further, the laser that laser emission subassembly sent shines on the wafer surface from surveying the top, and the scattered light that produces in defect department is collected by the detection of positioning disk 2 top to convert into the signal of telecommunication, carry out the defect detection, wherein, positioning disk 2 normal running fit is sliding laser emission subassembly, can carry out laser to whole wafer surface and cover, accomplishes the defect detection.
The laser emission subassembly is including fixing slide rail 4 on 3 inside walls of baffle and the slider 5 that slides in slide rail 4, installs the connecting rod 6 that extends to the outside on slider 5, and pivoted laser head 7 is installed to 6 tip of connecting rod.
The edge of baffle 3 fixed mounting has servo push rod 8, servo push rod 8's height is the same with slide rail 4 height, 8 output shaft tip of servo push rod extend to inside slide rail 4 and with slider 5 fixed connection.
On the basis, the laser head 7 is used for emitting laser for defect detection, and the servo push rod 8 works to push the slide block 5 to move in the slide rail 4, so that the position of the laser head 7 is adjusted in a progressive mode, and the laser can cover the whole surface of a detection wafer.
The regulating rod piece comprises two damping rotating shafts 9 positioned below the sliding rails 4 and hanging rods 10 installed on the inner side wall of the baffle 3 through the damping rotating shafts 9, the number of the hanging rods 10 is two, the other ends of the two hanging rods 10 extend to one side of the positioning disc 2, and the light gathering components are installed at the end portions of the hanging rods 10.
Further, peg 10 passes through damping pivot 9 and installs on baffle 3, can adjust spotlight component's height and angle according to the wafer specification that detects.
The light-gathering component comprises an inner baffle plate 11, an outer baffle plate 12 and a fixed solenoid 13 which are sequentially arranged on the surface of the end portion of a hanging rod 10, the inner baffle plate 11 and the fixed solenoid 13 are fixed on the surface of the hanging rod 10, the outer baffle plate 12 slides between the inner baffle plate 11 and the fixed solenoid 13, an adjusting screw 14 extending towards one side of the outer baffle plate 12 is inserted into the fixed solenoid 13, a bearing 15 is installed on the outer wall of the outer baffle plate 12 close to one side of the adjusting screw 14, the adjusting screw 14 is inserted into the bearing 15, and a knob 16 is installed at the outer end of the adjusting screw 14.
A cylindrical lens 17 is connected between the two hanging rods 10, and two ends of the cylindrical lens 17 are respectively positioned between the inner baffle 11 and the outer baffle 12 on the surfaces of the two hanging rods 10.
On foretell basis, during cylindrical lens 17 installs, directly with between the interior baffle 11 and the outer baffle 12 of its both ends card on both sides peg 10, then rotate adjusting screw 14 and promote outer baffle 12 and remove to interior baffle 11 one side, carry out the centre gripping with cylindrical lens 17, make cylindrical lens 17 install the tip at peg 10, and adjust peg 10 angle, make cylindrical lens 17 be located the route that laser head 7 launches the laser, accomplish the spotlight of laser ray through cylindrical lens 17, with the utilization ratio that promotes light.
Wherein, according to the demand that the wafer detected, cylindrical lens 17 can be dismantled and change, and direct antiport adjusting screw 14 drives outer baffle 12 and keeps away from interior baffle 11 for cylindrical lens 17 can follow and take off between interior baffle 11 and the outer baffle 12, changes not unidimensional cylindrical lens 17.
Install protective cushion 18 on the outer wall that interior baffle 11 and outer baffle 12 are close to mutually, protective cushion 18 laminates on the outer wall of cylindrical lens 17 tip, and protective cushion 18 provides the safeguard effect, and baffle 11 and outer baffle 12 carry out the centre gripping and fix cylindrical lens 17 in making things convenient for.
Install the backup pad 19 that upwards extends on the outer wall of baffle 3, be connected with roof 20 between the top of two backup pads 19, downwardly extending's infrared detection head 21 is installed to roof 20 bottom, infrared detection head 21 is located positioning disk 2 directly over, and infrared detection head 21 is located positioning disk 2's top, and the scattered light that the wafer defect department produced is gathered to the during operation top that is located the wafer.
It is obvious that the described embodiments are only some of the embodiments of the present invention, and not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art and related fields without creative efforts shall fall within the protection scope of the present invention. The structures, devices, and methods of operation of the present invention, not specifically described and illustrated, are generally practiced by those of ordinary skill in the art without specific recitation or limitation.

Claims (8)

1. The utility model provides a crystal defect detection equipment, including examining test table, there is the pivoted positioning disk examining test table surface mid-mounting, be equipped with in the positioning disk both sides and fix the baffle of examining test table edge, a serial communication port, install horizontal slip's laser emission subassembly on the inside wall that two baffles are close to mutually, install regulating rod spare on the baffle inside wall that is located laser emission subassembly below, regulating rod spare and laser emission subassembly all extend to spacer one side, be equipped with the detection subassembly in the top of positioning disk, the height that highly is higher than regulating rod spare and laser emission subassembly of detection subassembly, detachable spotlight subassembly is installed to the tip at regulating rod spare.
2. A die defect inspection apparatus as claimed in claim 1, wherein: the laser emission component comprises a slide rail fixed on the inner side wall of the baffle and a slide block sliding in the slide rail, a connecting rod extending outwards is installed on the slide block, and a rotating laser head is installed at the end part of the connecting rod.
3. A die defect inspection apparatus as claimed in claim 2, wherein: the edge of baffle fixed mounting has servo push rod, servo push rod's height is the same with the slide rail height, servo push rod output shaft tip extends to the slide rail inside and with slider fixed connection.
4. A die defect inspection apparatus as claimed in claim 2, wherein: the adjusting rod piece comprises two damping rotating shafts located below the sliding rails and hanging rods arranged on the inner side wall of the baffle through the damping rotating shafts, the number of the hanging rods is two, the other ends of the two hanging rods extend to one side of the positioning disc, and the light gathering assembly is arranged at the end portion of each hanging rod.
5. A device for detecting defects in a wafer as defined in claim 4, wherein: the light gathering component comprises an inner baffle, an outer baffle and a fixed solenoid which are sequentially arranged on the surface of the end portion of the hanging rod, the inner baffle and the fixed solenoid are fixed on the surface of the hanging rod, the outer baffle slides between the inner baffle and the fixed solenoid, an adjusting screw extending to one side of the outer baffle is inserted in the fixed solenoid, a bearing is installed on the outer wall, close to one side of the adjusting screw, of the outer baffle, the adjusting screw is inserted in the bearing, and a knob is installed at the outer end of the adjusting screw.
6. A device for detecting defects in a wafer as defined in claim 5, wherein: and a cylindrical lens is connected between the two hanging rods, and two ends of the cylindrical lens are respectively positioned between the inner baffle and the outer baffle on the surfaces of the two hanging rods.
7. A device for detecting defects in a wafer as defined in claim 6, wherein: and a protective cushion layer is arranged on the outer wall of the inner baffle plate and the outer baffle plate, which are close to each other, and the protective cushion layer is attached to the outer wall of the end part of the cylindrical lens.
8. A die defect inspection apparatus as claimed in claim 2, wherein: the infrared detector is characterized in that supporting plates extending upwards are mounted on the outer walls of the two baffle plates, a top plate is connected between the top ends of the two supporting plates, infrared detector heads extending downwards are mounted at the bottom of the top plate, and the infrared detector heads are located right above the positioning plate.
CN202223210008.XU 2022-12-01 2022-12-01 Wafer defect detection equipment Active CN218766698U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202223210008.XU CN218766698U (en) 2022-12-01 2022-12-01 Wafer defect detection equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202223210008.XU CN218766698U (en) 2022-12-01 2022-12-01 Wafer defect detection equipment

Publications (1)

Publication Number Publication Date
CN218766698U true CN218766698U (en) 2023-03-28

Family

ID=85678584

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202223210008.XU Active CN218766698U (en) 2022-12-01 2022-12-01 Wafer defect detection equipment

Country Status (1)

Country Link
CN (1) CN218766698U (en)

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