CN218711031U - Device for reducing defect density of carbon inclusion in silicon carbide single crystal - Google Patents
Device for reducing defect density of carbon inclusion in silicon carbide single crystal Download PDFInfo
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- CN218711031U CN218711031U CN202120873923.3U CN202120873923U CN218711031U CN 218711031 U CN218711031 U CN 218711031U CN 202120873923 U CN202120873923 U CN 202120873923U CN 218711031 U CN218711031 U CN 218711031U
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Abstract
The utility model discloses a device for reducing defect density of a carbon inclusion in a silicon carbide single crystal, relating to the technical field of silicon carbide single crystal preparation; comprises a crucible body, wherein a crucible cover is arranged at the upper part of the crucible body; the inner surface of the crucible cover is fixedly connected with a seed crystal support, the lower surface of the seed crystal support is fixedly provided with a silicon carbide seed crystal, and the silicon carbide seed crystal is used for growing a silicon carbide crystal; the crucible comprises a crucible body, and is characterized in that a silicon carbide partition plate is arranged in the crucible body, a plurality of pores are distributed on the silicon carbide partition plate, a material area is arranged at the bottom in the crucible body and used for placing silicon carbide powder, and the silicon carbide partition plate is used for isolating silicon carbide crystals from the silicon carbide powder; the utility model discloses a carborundum baffle that has the hole will be the carborundum powder and the carborundum crystal phase isolation of dispersion form, prevents the lifting of remaining carbon along with the air current in the powder to reduce the carbon inclusion defect density in the carborundum single crystal.
Description
Technical Field
The utility model relates to a silicon carbide single crystal preparation technical field, concretely relates to reduce device of the inside carbon inclusion body defect density of silicon carbide single crystal.
Background
The silicon carbide single crystal is a novel third-generation semiconductor material for preparing radio frequency power devices and high-voltage power electronic devices. At present, the mainstream silicon carbide single crystal growth in the world adopts a physical vapor transport method. Graphite material is usually used as a crucible, silicon carbide powder is placed at the bottom of the crucible, silicon carbide seed crystals are fixed at the top of the crucible, and Si (g), C (g) and Si are formed at high temperature by utilizing the temperature gradient existing between the bottom and the top 2 C(g)、SiC 2 (g) The gas phase components will condense and grow at the silicon carbide seed crystal, and form SiC single crystal with thickness of tens of millimeters.
The silicon carbide single crystal is generally obtained by growing at a high temperature of over 2200 ℃ for tens to hundreds of hours, under such a high-temperature environment, the Si component in the silicon carbide powder can be preferentially sublimated, the size of the silicon carbide powder is generally between tens of micrometers and several millimeters, and more residual carbon particles and carbon particle aggregation substances can be formed in the silicon carbide powder region through the process of growing the crystal for tens to hundreds of hours. After the substances overcome the influence of gravity, part of the substances enter the silicon carbide single crystal along with growth gas flow in the crystal growth process to form the defect of the inlaid carbon packet with the size of micron level, and the defect of the inlaid carbon packet with the millimeter level can be found sometimes due to carbon particle clusters and the like.
Such carbon inclusion defects are mainly concentrated at the center of the crystal and are emitted from the center to the edge, thereby causing the carbon inclusion defects to be dispersed in a point shape at the edge of the crystal, as shown in a diagram a in fig. 2. Along with the prolonging of the crystal production time or the increase of the crystal thickness, the density of the carbon inclusion defects is more and more large, and the density of the carbon inclusion defects can reach tens of thousands/cm 2 When the SiC device works, the heterogeneous defects can cause the phenomenon of electric leakage of the device, and the working performance of the device is influenced. Meanwhile, in the process of growing the silicon carbide single crystal, as a growing interface appears on some heterogeneous inlays, micropipe defects are often formed on the upper parts of the defects of the carbon inclusions, and the defects can directly cause the failure of the device. Therefore, in the process of growing the silicon carbide single crystal, the sublimation of the silicon carbide powder needs to be controlled, and the defect density of the carbon inclusion in the silicon carbide crystal is reduced.
SUMMERY OF THE UTILITY MODEL
The utility model overcomes prior art's is not enough, provides a reduce inside carbon inclusion defect density's of carborundum single crystal device to prevent the carbon granule in the bottom powder along with the lift of air current, reduce the carbon inclusion defect density in the carborundum crystal.
In order to achieve the purpose, the utility model is realized by the following technical scheme.
A device for reducing the defect density of a carbon inclusion in a silicon carbide single crystal comprises a crucible body, wherein a crucible cover is arranged at the upper part of the crucible body; the inner surface of the crucible cover is fixedly connected with a seed crystal support, and a silicon carbide seed crystal is fixed on the lower surface of the seed crystal support and used for growing a silicon carbide crystal; the crucible comprises a crucible body, and is characterized in that a silicon carbide partition plate is arranged in the crucible body, a plurality of pores are distributed on the silicon carbide partition plate, the pore diameter of each pore is 0.1-50 mu m, a material zone is arranged at the bottom in the crucible body and used for placing silicon carbide powder, and the silicon carbide partition plate is used for isolating silicon carbide crystals and the silicon carbide powder.
Further, the silicon carbide partition board is placed above the silicon carbide powder.
Furthermore, the dry pot body, the crucible cover and the seed crystal support are all made of graphite.
Further, the plurality of pores are uniformly distributed on the silicon carbide partition plate.
The utility model discloses produced beneficial effect for prior art does:
compared with the prior art, the utility model discloses a compactness is better, and the even carborundum baffle in hole will be the carborundum powder and the carborundum crystal phase separation of dispersion form, effectively prevents the remaining carbon in the powder and along with the lift of air current, can guarantee Si (g), si again 2 C(g)、SiC 2 (g) Free passage of the atmosphere, thereby reducing the density of carbon inclusion defects in the silicon carbide single crystal; and the adjustment of conveying the sublimation atmosphere can be realized by controlling the pore density, so that the growth rate of the crystal is adjusted, and the growth of high-quality silicon carbide single crystal is favorably realized.
Drawings
Fig. 1 is a schematic view of the assembly structure of the crucible of the present invention.
In the figure: 1 is a graphite crucible cover; 2 is a graphite seed crystal support; 3 is silicon carbide seed crystal; 4 is silicon carbide crystal; 5 is a clapboard; 6 is silicon carbide powder; and 7 is a graphite crucible body.
FIG. 2 is a comparison of a silicon carbide single crystal produced by using a conventional apparatus and the apparatus of the present invention, wherein A is produced by using the conventional apparatus and B is produced by using the apparatus of the present invention.
Detailed Description
In order to make the technical problem, technical scheme and beneficial effect that the utility model will solve more clearly understand, combine embodiment and attached drawing, it is right to go on further detailed description the utility model discloses. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. The technical solution of the present invention is described in detail below with reference to the embodiments and the accompanying drawings, but the scope of protection is not limited thereto.
As shown in FIG. 1, the device for reducing the defect density of the carbon inclusion in the silicon carbide single crystal comprises a graphite crucible body 7, wherein a graphite crucible cover 1 is arranged at the upper part of the graphite crucible body 7; the inner surface of the graphite crucible cover 1 is fixedly connected with a graphite seed crystal holder 2, the lower surface of the graphite seed crystal holder 2 is fixedly provided with a silicon carbide seed crystal 3, and a silicon carbide crystal 4 grows on the silicon carbide seed crystal 3; silicon carbide powder 6 is placed at the bottom in the graphite crucible body 7, a partition plate 5 made of silicon carbide is placed above the silicon carbide powder 6, a plurality of pores are uniformly distributed on the partition plate 5, the pore diameter of each pore is 0.1-50 mu m, and the partition plate 5 is used for isolating the silicon carbide crystal 4 from the silicon carbide powder 6.
The silicon carbide partition board with pores is adopted to separate the silicon carbide powder 6 and the silicon carbide crystal 4 in a dispersion state, so that the residual carbon in the powder is effectively prevented from rising along with the airflow, and the Si (g) can be ensured 2 C(g)、SiC 2 (g) Free passage of the atmosphere reduces the density of carbon inclusion defects in the silicon carbide single crystal. As shown in FIG. 2, the left diagram A shows a conventional silicon carbide powder 6 directly grown on a silicon carbide seed crystal 3 by vapor phase transport, and the diagram B shows a silicon carbide crystal prepared by placing a porous partition plate 5 made of silicon carbide above the silicon carbide powder 6 according to the present embodiment.
The above description is for further details of the present invention with reference to specific preferred embodiments, and it should not be understood that the embodiments of the present invention are limited thereto, and it will be apparent to those skilled in the art that the present invention can be implemented in a plurality of simple deductions or substitutions without departing from the scope of the present invention, and all such alterations and substitutions should be considered as belonging to the present invention, which is defined by the appended claims.
Claims (4)
1. The device for reducing the defect density of the carbon inclusion in the silicon carbide single crystal is characterized by comprising a crucible body, wherein a crucible cover is arranged at the upper part of the crucible body; the inner surface of the crucible cover is fixedly connected with a seed crystal support, the lower surface of the seed crystal support is fixedly provided with a silicon carbide seed crystal, and the silicon carbide seed crystal is used for growing a silicon carbide crystal; the crucible comprises a crucible body, and is characterized in that a silicon carbide partition plate is arranged in the crucible body, a plurality of pores are distributed on the silicon carbide partition plate, the pore diameter of each pore is 0.1-50 mu m, a material area is arranged at the bottom in the crucible body and used for placing silicon carbide powder, and the silicon carbide partition plate is used for isolating silicon carbide crystals and silicon carbide powder.
2. An apparatus for reducing the defect density of carbon inclusions in a silicon carbide single crystal according to claim 1, wherein the silicon carbide partition plate is placed above the silicon carbide powder.
3. The apparatus as claimed in claim 1, wherein the crucible body, the crucible cover and the seed crystal holder are made of graphite.
4. An apparatus according to claim 1, wherein the plurality of pores are uniformly distributed in the silicon carbide spacer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120873923.3U CN218711031U (en) | 2021-04-26 | 2021-04-26 | Device for reducing defect density of carbon inclusion in silicon carbide single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120873923.3U CN218711031U (en) | 2021-04-26 | 2021-04-26 | Device for reducing defect density of carbon inclusion in silicon carbide single crystal |
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| Publication Number | Publication Date |
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| CN218711031U true CN218711031U (en) | 2023-03-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202120873923.3U Active CN218711031U (en) | 2021-04-26 | 2021-04-26 | Device for reducing defect density of carbon inclusion in silicon carbide single crystal |
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| CN (1) | CN218711031U (en) |
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- 2021-04-26 CN CN202120873923.3U patent/CN218711031U/en active Active
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