CN218679384U - Piezoelectric micromechanical loudspeaker - Google Patents
Piezoelectric micromechanical loudspeaker Download PDFInfo
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- CN218679384U CN218679384U CN202222652147.1U CN202222652147U CN218679384U CN 218679384 U CN218679384 U CN 218679384U CN 202222652147 U CN202222652147 U CN 202222652147U CN 218679384 U CN218679384 U CN 218679384U
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Abstract
The utility model provides a piezoelectricity micromechanical speaker, piezoelectricity micromechanical speaker includes: a base layer having a cavity at one end of the base layer; the lower electrode layer is arranged on the substrate layer, and the lower electrode layer is positioned at the other end of the substrate layer; a piezoelectric layer disposed on the lower electrode layer; the upper electrode layer is arranged on the piezoelectric layer, the edge of the upper electrode layer extends to the substrate layer, and the edge of the upper electrode layer and the edge of the lower electrode layer are arranged alternately; and the isolating layer is wrapped on the edge of the piezoelectric layer and used for isolating the upper electrode layer and the lower electrode layer. The utility model provides a piezoelectricity micromechanical speaker, this piezoelectricity micromechanical speaker can guarantee the high uniformity of vibration mode, improves the frequency response performance of piezoelectricity micromechanical speaker, and can keep insulating between last electrode layer and the bottom electrode layer.
Description
Technical Field
The utility model relates to a speaker technical field especially relates to a piezoelectricity micromechanical speaker.
Background
Microelectromechanical Systems (MEMS) are a device miniaturization technology that integrates micromechanical structures and circuitry into a single chip. The loudspeaker is a device which extrudes air to form sound by vibrating back and forth by a vibrating diaphragm and transmits the sound to the periphery, and the piezoelectric MEMS loudspeaker is a chip device which vibrates a tiny mechanical structure by a piezoelectric effect so as to emit the sound. As shown in fig. 1, a conventional piezoelectric MEMS speaker has a circular diaphragm area with a multilayer structure, which is divided into a substrate layer a, a structural layer c, a lower electrode layer b, a piezoelectric layer e, and an upper electrode layer d.
The audio frequency range heard by human ears is below 20kHz, and the resonance frequency of a general piezoelectric MEMS loudspeaker is set to be 3-5 kHz. The piezoelectric layer material of conventional piezoelectric MEMS speakers is mainly aluminum nitride (AlN). However, the resonance frequency of the MEMS speaker based on the AlN piezoelectric layer is high, and when the resonance frequency should be set at 3 to 5kHz, the diameter of the diaphragm may reach 5mm. Because the hole area is arranged below the diaphragm, when the diameter of the diaphragm is too large, the diaphragm can be bent and deformed or even collapsed due to internal stress in the manufacturing process of the MEMS loudspeaker, and performance reduction or even device damage is caused.
On the other hand, in order to obtain a large output sound pressure, the piezoelectric MEMS speaker needs to have a diaphragm with a light weight and a large vibration amplitude. Therefore, as shown in fig. 2, the non-structural layer except the center electrode in the diaphragm area of the conventional piezoelectric MEMS speaker is etched away to reduce the mass of the diaphragm. However, since the center electrode needs to be electrically connected to the substrate, a bridge structure f needs to be left to lead the electrode to the substrate, and thus the piezoelectric layer at the bridge has to be left. From the view point of the whole structure and the diaphragm form of the device, the remaining bridge structure tends to destroy the central symmetry of the MEMS speaker, resulting in the deformation of the diaphragm vibration form, thereby causing the degradation of the device performance.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to overcome the above problem that prior art exists, provide a piezoelectricity micro machinery speaker, this piezoelectricity micro machinery speaker has high output sound pressure to the structural central symmetry that is of device.
For realizing above-mentioned technical purpose, reach above-mentioned technological effect, the utility model discloses a following technical scheme realizes:
the utility model provides a piezoelectricity micromechanical speaker, piezoelectricity micromechanical speaker includes:
a base layer having a cavity at one end of the base layer;
the lower electrode layer is arranged on the substrate layer, and the lower electrode layer is positioned at the other end of the substrate layer;
a piezoelectric layer disposed on the lower electrode layer;
the upper electrode layer is arranged on the piezoelectric layer, the edge of the upper electrode layer extends to the substrate layer, and the edge of the upper electrode layer and the edge of the lower electrode layer are arranged alternately; and
and the isolating layer is wrapped on the edge of the piezoelectric layer and used for isolating the upper electrode layer and the lower electrode layer.
In an embodiment of the present invention, the lower electrode layer includes:
a lower central electrode disposed on the base layer; and
and the lower edge electrodes are arranged on the lower central electrode, and are positioned on the side wall of the lower central electrode.
In an embodiment of the present invention, the edge of the piezoelectric layer is a slope.
In one embodiment of the present invention, the base layer comprises:
a substrate layer; and
the buried oxide layer is arranged on the substrate layer and is positioned at one end of the substrate layer.
In an embodiment of the present invention, the substrate layer further includes a structural layer, the structural layer is located at one end of the buried oxide layer, which is far away from the substrate layer.
In an embodiment of the present invention, the upper electrode layer includes:
an upper central electrode disposed on the piezoelectric layer; and
and one end of the upper edge electrode is connected with the side wall of the upper central electrode, and the other end of the upper edge electrode extends to the structural layer after passing through the edge of the piezoelectric layer.
In one embodiment of the present invention, the upper edge electrode is located between two adjacent lower edge electrodes, and a gap is formed between the upper edge electrode and the lower edge electrode.
In one embodiment of the present invention, one end of the isolation layer extends between the upper electrode layer and the piezoelectric layer, and the other end of the isolation layer extends between the lower center electrode and the upper edge electrode.
To sum up, the utility model provides a piezoelectricity micromechanical speaker, this piezoelectricity micromechanical speaker get rid of the unnecessary piezoelectric layer of vibration region and metal level completely, keep the central symmetry of structure, guarantee the high uniformity of vibration mode, improve the frequency response performance of piezoelectricity micromechanical speaker, and the edge of piezoelectric layer is the slope setting, and the line is walked to the edge, sets up the isolation layer at the edge of piezoelectric layer, ensures the in-process of drawing forth the excitation electrode at center, goes up and keeps insulating between electrode layer and the bottom electrode layer.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the invention without undue limitation to the invention. In the drawings:
fig. 1 is a schematic structural view of a conventional piezoelectric MEMS speaker;
FIG. 2 is a schematic structural view of a conventional piezoelectric MEMS speaker;
FIG. 3 is a schematic view of the overall structure of an angle of the present invention;
fig. 4 is a schematic view of another angle of the present invention;
figure 5 is an exploded view of the structure of figure 3 according to the present invention;
fig. 6 is a schematic diagram of the internal structure of the present invention;
figure 7 is a front view of figure 6 of the present invention;
fig. 8 is a top view of the overall structure of the present invention;
fig. 9 is an enlarged view of a structure shown in fig. 8 according to the present invention;
fig. 10 is a schematic view of the structure of the substrate layer of the present invention;
fig. 11 is a flow chart of a method of fabricating a piezoelectric micromachined loudspeaker according to an embodiment of the present invention;
fig. 12 is a flow chart of a method for fabricating a piezoelectric micromachined loudspeaker according to another embodiment of the present invention.
The reference numbers in the figures illustrate: 1-substrate layer, 10-substrate layer, 11-oxygen buried layer, 12-structural layer, 13-cavity, 14-vibration region, 2-lower electrode layer, 20-lower edge electrode, 21-lower central electrode, 3-isolation layer, 4-upper electrode layer, 40-upper edge electrode, 41-upper central electrode, 5-piezoelectric layer and 51-annular groove.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
Referring to fig. 3 to 7 and 10, the present invention provides a piezoelectric micromechanical speaker, which has high output sound pressure and is centrosymmetric in structure. Specifically, the piezoelectric micromechanical speaker includes: the piezoelectric micro-mechanical loudspeaker comprises a substrate layer 1, wherein the substrate layer 1 is provided with a cavity 13, the cavity 13 is located at one end of the substrate layer 1, and a vibration area 14 of the piezoelectric micro-mechanical loudspeaker is located above the cavity 13. In an embodiment of the present invention, the substrate layer 1 includes a substrate layer 10, a buried oxide layer 11 and a structure layer 12, and the structure layer 12, the buried oxide layer 11 and the substrate layer 10 are in the form of Silicon On Insulator (SOI) as a whole, wherein the material of the structure layer 12 and the substrate layer 10 can be monocrystalline silicon, and the material of the buried oxide layer 11 can be silicon dioxide. The buried oxide layer 11 is located on the substrate layer 10, and the buried oxide layer 11 is located at one end of the substrate layer 10 and is used as a stop layer when the substrate layer 10 is etched. The cavity 13 is located inside the substrate layer 10 and the buried oxide layer 11, the cavity 13 can be etched from the substrate layer 10 until the buried oxide layer 11 is etched, and the buried oxide layer 11 is etchedThrough, a cavity 13 is formed. The radius of the cavity 13 is r 1 ，r 1 Is set to a reasonable value according to the actual application, above the cavity 13 is the vibrating area 14 of the piezoelectric micromechanical loudspeaker. The structural layer 12 is located on the buried oxide layer 11, and the structural layer 12 is located at an end of the buried oxide layer 11 far away from the substrate layer 10.
Referring to fig. 5 to 9, in an embodiment of the present invention, the piezoelectric micromechanical speaker further includes a lower electrode layer 2, the lower electrode layer 2 is disposed on the substrate layer 1, and the lower electrode layer 2 is located at the other end of the substrate layer 1. The lower electrode layer 2 serves as a ground electrode. The material of the lower electrode layer 2 is a metal, and may include, but is not limited to, platinum (Pt), gold (Au), aluminum (Al), molybdenum (Mo), and the like, for example. The lower electrode layer 2 includes a lower central electrode 21 and a lower edge electrode 20, the lower central electrode 21 is located at the center of the structural layer 12, and the edge of the lower central electrode 21 is disposed in a slope. The lower edge electrode 20 is disposed on the lower center electrode 21 and located on the sidewall of the lower center electrode 21. The number of the lower edge electrodes 20 is at least two, and may be three, six, or eight, for example, and the plurality of lower edge electrodes 20 are arranged in central symmetry. The included angle between the two side edges of the lower edge electrode 20 is theta 1 ，θ 1 Can be designed into any suitable angle according to actual conditions.
Referring to fig. 5 to 7, in an embodiment of the present invention, the piezoelectric micro-mechanical speaker further includes a piezoelectric layer 5 and an upper electrode layer 4, wherein the piezoelectric layer 5 is disposed on the lower electrode layer 2. Specifically, the piezoelectric layer 5 is located on the lower center electrode 21, and the edge of the piezoelectric layer 5 is arranged in a slope, and the piezoelectric layer 5 can deform through the inverse piezoelectric effect to drive the vibration area 14 to vibrate. The edge of the piezoelectric layer 5 is designed to be sloped so that the upper electrode layer 4 can be led onto the structural layer 12. The area of the piezoelectric layer 5 not covered by the upper electrode layer 4 is etched away completely, and high output sound pressure of the piezoelectric micro-mechanical speaker can be realized. The radius of the piezoelectric layer 5 is r 2 ，r 2 The value of (c) is set to a reasonable value according to the actual application. The piezoelectric layer 5 is a piezoelectric material, and may include, but is not limited to, aluminum nitride (AlN), lead zirconate titanate (PZT), and the like, and may also include a doped piezoelectric material formed by doping the piezoelectric material with different componentsThe material may also include piezoelectric materials of different crystal orientations, single crystals, polycrystals, and the like of the same piezoelectric material. An annular recess 51 is provided in the piezoelectric layer 5 at an end remote from the lower electrode layer 2.
Referring to fig. 3, 5 to 9, in an embodiment of the present invention, the upper electrode layer 4 is disposed on the piezoelectric layer 5, the edge of the upper electrode layer 4 extends to the substrate layer 1, and the edge of the upper electrode layer 4 and the edge of the lower electrode layer 2 are disposed alternately. The material of the upper electrode layer 4 may be a metal, and may include, for example, but not limited to, platinum (Pt), gold (Au), aluminum (Al), molybdenum (Mo), and the like. In addition, the upper electrode layer 4 may also be a multi-layer metal covering the same pattern area to improve the electrical and mechanical performance of the device. For example, the upper electrode layer 4 employs a Pt metal layer, and then an Au metal layer with the same pattern is grown on the upper surface of the Pt metal layer. The upper electrode layer 4 serves as an excitation electrode, and in particular, the specific structure of the upper electrode layer 4 may include an upper center electrode 41 and an upper edge electrode 40, and the upper center electrode 41 is located at one end of the piezoelectric layer 5 away from the lower electrode layer 2. The radius of the upper center electrode 41 is r 3 ，r 3 The value of (c) is set to a reasonable value according to the actual application. The upper edge electrode 40 is disposed on a sidewall of the upper center electrode 41, specifically, one end of the upper edge electrode 40 is connected to the sidewall of the upper center electrode 41, and the other end of the upper edge electrode 40 passes through an edge of the piezoelectric layer 5 and then extends to the structural layer 12 and is located between two adjacent lower edge electrodes 20. The number of upper edge electrodes 40 corresponds to the number of lower edge electrodes. The upper edge electrode 40 may be Z-like, but is not limited thereto. A gap d is formed between the upper edge electrode 40 and the lower edge electrode 20, and the included angle between the two sides of the upper edge electrode 40 is theta 2 ，θ 2 Can be designed into any suitable angle according to actual conditions.
Referring to fig. 3 and 5 to 8, in an embodiment of the present invention, since the upper surface and the lower surface of the piezoelectric layer 5 are the upper electrode layer 4 and the lower electrode layer 2, respectively, in the process that the upper electrode layer 4 passes through the slope at the edge of the piezoelectric layer 5, the upper electrode layer 4 and the lower electrode layer 2 are easily connected to form a short circuit. The piezoelectric micromechanical loudspeaker further comprises an isolation layer 3, wherein the isolation layer 3 is wrapped on the edge of the piezoelectric layer 5 and used for isolating the upper electrode layer 4 from the lower electrode layer 2, and the upper electrode layer 4 is always on the surface of the isolation layer 3 in the process of extending to the structural layer 12. One end of the spacer 3 extends to the inside of the annular groove 51 between the upper electrode layer 4 and the piezoelectric layer 5, and the other end of the spacer 3 extends to the side of the lower center electrode 21 between the lower center electrode 21 and the upper edge electrode 40. The application does not limit the material of the isolation layer 3, in an embodiment of the present invention, the material of the isolation layer 3 may be silicon dioxide, silicon nitride, or aluminum oxide.
The present invention further provides a processing method of a piezoelectric micromechanical speaker, please refer to fig. 5, fig. 10, and fig. 11, in an embodiment of the present invention, the processing method includes steps S1 to S6:
s1, a commercial SOI wafer is prepared, and a metal of a lower electrode layer 2 is grown on the upper surface of the SOI wafer. The size of the SOI wafer is not limited, and in an embodiment of the present invention, the SOI wafer may be two inches, may also be four inches, and may also be six inches or eight inches. The growth method of the lower electrode layer 2 may be electron beam evaporation or magnetron sputtering, but is not limited thereto.
S2, growing the piezoelectric layer 5 on the upper surface of the lower electrode layer 2, and then photoetching and etching the piezoelectric layer 5. The piezoelectric layer 5 may be grown by magnetron sputtering or sol-gel method, but is not limited thereto. Specifically, the area of the piezoelectric layer 5 in the vibration area 14 of the piezoelectric micromechanical loudspeaker that is not covered by the upper electrode layer 4 is etched away in its entirety. The etching method of the piezoelectric layer 5 is wet etching, which is favorable for forming a ramp-like structure.
And S3, photoetching and etching the lower electrode layer 2. The etching method of the lower electrode layer 2 may be a reactive ion etching method (RIE), an inductively coupled plasma etching method (ICP), or an ion beam etching method (IBE).
S4, growing the isolation layer 3 on the edge of the piezoelectric layer 5, the upper surface of the piezoelectric layer and the edge of the lower electrode layer 2, and photoetching and etching the isolation layer 3. The method for growing the isolation layer 3 may be Physical Vapor Deposition (PVD) or Chemical Vapor Deposition (CVD), but is not limited thereto. The etching method of the isolation layer 3 may be a reactive ion etching method (RIE), an inductively coupled plasma etching method (ICP), or a wet etching method.
S5 growing the metal of the upper electrode layer 4, and photo-etching and etching the upper electrode layer 4. The upper electrode layer 4 may be grown by electron beam evaporation or magnetron sputtering. The etching method of the upper electrode layer 4 may be Reactive Ion Etching (RIE), inductively coupled plasma etching (ICP), or Ion Beam Etching (IBE).
S6, photoetching and etching the substrate layer 10 and the buried oxide layer 11 of the SOI to obtain the piezoelectric micro mechanical loudspeaker. The etching method of the substrate layer 10 is Deep Reactive Ion Etching (DRIE), but is not limited thereto. The etching method of the buried oxide layer 11 is a reactive ion etching method (RIE), but is not limited thereto.
Please refer to fig. 5, 10, and 12 in another embodiment of the present invention, the processing method includes step S1 1 -S7 1 ：
S1 1 A commercial SOI wafer is prepared, and the metal of the lower electrode layer 2 is grown on the upper surface of the SOI wafer. The size of the SOI wafer is not limited, and in an embodiment of the present invention, the SOI wafer may be two inches, may also be four inches, and may also be six inches or eight inches. The growth method of the lower electrode layer 2 may be electron beam evaporation or magnetron sputtering, but is not limited thereto.
S2 1 A piezoelectric layer 5 is grown on the upper surface of the lower electrode layer 2. The growth mode of the piezoelectric layer 5 may be a magnetron sputtering method or a sol-gel method, but is not limited thereto.
S3 1 The metal of the upper electrode layer 4 is grown for the first time, and the upper electrode layer 4 is photo-etched and etched. The upper electrode layer 4 may be grown by electron beam evaporation or magnetron sputtering. The etching method of the upper electrode layer 4 may be Reactive Ion Etching (RIE), inductively coupled plasma etching (ICP), or Ion Beam Etching (IBE). After etching, the upper electrode layer 4 only remains a central circular area, i.e. the upper central electrode 41.
S4 1 Photoetching and etchingA piezoelectric layer 5 and a lower electrode layer 2. The etching method of the piezoelectric layer 5 is wet etching, which is favorable for forming a ramp-like structure. Specifically, the area of the piezoelectric layer 5 in the vibration area 14 of the piezoelectric micromechanical loudspeaker that is not covered by the upper electrode layer 4 is etched away in its entirety. The etching method of the lower electrode layer 2 may be a reactive ion etching method (RIE), an inductively coupled plasma etching method (ICP), or an ion beam etching method (IBE). After etching, a complete pattern of the lower electrode layer 2 is formed.
S5 1 After growing the isolation layer 3, the isolation layer 3 is etched and etched. The isolation layer 3 may be grown by Physical Vapor Deposition (PVD) or Chemical Vapor Deposition (CVD), but is not limited thereto. The etching method of the isolation layer 3 may be Reactive Ion Etching (RIE), inductively coupled plasma etching (ICP), or wet etching.
S6 1 The metal of the upper electrode layer 4 is grown a second time. The upper electrode layer 4 is grown by lift-off. After the growth is completed, the growth of the upper electrode layer 4 is completed at the edge of the spacer layer 3 and the area between two adjacent lower edge electrodes 20.
S7 1 Photoetching and etching the substrate layer 10 and the buried oxide layer 11 of the SOI to obtain the piezoelectric micromechanical loudspeaker. The etching method of the substrate layer 10 is Deep Reactive Ion Etching (DRIE), but is not limited thereto. The etching method of the buried oxide layer 11 is a reactive ion etching method (RIE), but is not limited thereto.
To sum up, the utility model provides a piezoelectricity micromechanical speaker, this piezoelectricity micromechanical speaker get rid of the unnecessary piezoelectric layer of vibration region and metal level completely, keep the central symmetry of structure, guarantee the high uniformity of vibration mode, improve the frequency response performance of piezoelectricity micromechanical speaker, and the edge of piezoelectric layer is the slope setting, and the line is walked to the edge, sets up the isolation layer at the edge of piezoelectric layer, ensures the in-process of drawing forth the excitation electrode at center, goes up and keeps insulating between electrode layer and the bottom electrode layer.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the above embodiments, and that the foregoing embodiments and descriptions are provided only to illustrate the principles of the present invention without departing from the spirit and scope of the present invention.
Claims (8)
1. A piezoelectric micromachined speaker, comprising:
the substrate layer is provided with a cavity, and the cavity is positioned at one end of the substrate layer;
the lower electrode layer is arranged on the substrate layer, and the lower electrode layer is positioned at the other end of the substrate layer;
a piezoelectric layer disposed on the lower electrode layer;
the upper electrode layer is arranged on the piezoelectric layer, the edge of the upper electrode layer extends to the substrate layer, and the edge of the upper electrode layer and the edge of the lower electrode layer are arranged alternately; and
and the isolating layer is wrapped on the edge of the piezoelectric layer and used for isolating the upper electrode layer and the lower electrode layer.
2. Piezoelectric micromachined speaker according to claim 1, wherein the lower electrode layer comprises:
a lower central electrode disposed on the base layer; and
and the lower edge electrodes are arranged on the lower central electrode and positioned on the side wall of the lower central electrode.
3. Piezoelectric micromachined loudspeaker according to claim 1, wherein an edge of the piezoelectric layer is sloped.
4. Piezoelectric micromachined loudspeaker according to claim 2, wherein the base layer comprises:
a substrate layer; and
the buried oxide layer is arranged on the substrate layer and is positioned at one end of the substrate layer.
5. A piezoelectric micromachined loudspeaker according to claim 4, wherein the base layer further comprises a structural layer on the buried oxide layer at an end remote from the substrate layer.
6. Piezoelectric micromachined speaker according to claim 5, wherein the upper electrode layer comprises:
an upper central electrode disposed on the piezoelectric layer; and
and one end of the upper edge electrode is connected with the side wall of the upper central electrode, and the other end of the upper edge electrode extends to the structural layer after passing through the edge of the piezoelectric layer.
7. The piezoelectric micromachined speaker according to claim 6, wherein the upper edge electrode is located between two adjacent lower edge electrodes with a gap formed therebetween.
8. The piezoelectric micromachined speaker of claim 6, wherein one end of the isolation layer extends between the upper electrode layer and the piezoelectric layer, and the other end of the isolation layer extends between the lower center electrode and the upper edge electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222652147.1U CN218679384U (en) | 2022-10-09 | 2022-10-09 | Piezoelectric micromechanical loudspeaker |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202222652147.1U CN218679384U (en) | 2022-10-09 | 2022-10-09 | Piezoelectric micromechanical loudspeaker |
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| CN218679384U true CN218679384U (en) | 2023-03-21 |
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| CN202222652147.1U Active CN218679384U (en) | 2022-10-09 | 2022-10-09 | Piezoelectric micromechanical loudspeaker |
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