CN218602386U

CN218602386U - Monocrystalline silicon piece heat treatment device

Info

Publication number: CN218602386U
Application number: CN202222442832.1U
Authority: CN
Inventors: 杨定勇; 张力峰; 邹文龙
Original assignee: Yangzhou Jingying Photoelectric Technology Co ltd
Current assignee: Yangzhou Jingying Photoelectric Technology Co ltd
Priority date: 2022-09-15
Filing date: 2022-09-15
Publication date: 2023-03-10
Anticipated expiration: 2032-09-15

Abstract

The utility model provides a monocrystalline silicon wafer heat treatment device, which relates to the technical field of silicon wafer processing and comprises a bottom plate, wherein a cover plate is covered above the bottom plate, the top of the cover plate is provided with an air inlet, a main channel is arranged below the air inlet, a branch channel is arranged below the main channel, a placing groove matched with the branch channel is arranged above the bottom plate, and the bottom of the bottom plate is provided with a water groove; the air inlet is internally provided with a fan, and a heating resistor is arranged above the fan. The utility model discloses an air intake is leading-in hot-blast, then blows at the silicon chip of a passageway and standing groove inside to erecting to the effect of cooperation gravity can blow in the basin with the water stain on silicon chip surface inside, has changed traditional sealed stoving, can blow off the water stain on silicon chip surface in advance, then dries to remaining water stain through hot-blast quick, has promoted drying efficiency.

Description

Monocrystalline silicon piece heat treatment device

Technical Field

The utility model relates to a silicon chip processing technology field especially relates to a monocrystalline silicon piece heat treatment device.

Background

The surface of the monocrystalline silicon piece is wet after being cleaned, and the heat processor can remove the moisture on the surface of the monocrystalline silicon piece so as to facilitate subsequent bagging;

the traditional heat treatment device for the monocrystalline silicon wafer comprises: the device comprises a sealed box body, a heater and a bearing disc, wherein the heater is used for increasing the internal temperature of the box body so as to dry the monocrystalline silicon wafer above the bearing disc;

the conventional heat treatment apparatus for single crystal silicon wafers has the following problems: the time required for drying all the moisture on the surface of the monocrystalline silicon piece is long by only using the heater, and the efficiency is low.

Therefore, there is a need for a single crystal silicon wafer heat processor capable of solving the above problems.

SUMMERY OF THE UTILITY MODEL

The purpose of the utility model is to solve the shortcoming that exists among the prior art, solve the problem of proposing among the above-mentioned background art.

In order to achieve the above purpose, the utility model adopts the following technical scheme: a monocrystalline silicon wafer heat treatment device comprises a bottom plate, wherein a cover plate covers the top of the bottom plate, an air inlet is formed in the top of the cover plate, a main channel is formed below the air inlet, a branch channel is formed below the main channel, a placing groove matched with the branch channel is formed above the bottom plate, and a water tank is formed in the bottom of the bottom plate;

the air inlet is internally provided with a fan, and a heating resistor is arranged above the fan.

Preferably, electric telescopic handle is installed at the bottom plate top, and electric telescopic handle output connects in the apron.

Preferably, the branch channels are provided with seven groups, and the widths of the branch channels are sequentially increased from left to right.

Preferably, the bottom wall of the placing groove is designed in a hollow shape, so that the placing groove can be communicated with the water tank.

Preferably, the top wall of the air inlet is connected with a filter screen.

Preferably, the right side of the water tank is provided with a water outlet, and the water outlet is inclined in a shape of being higher at the left and lower at the right.

Preferably, the left side of the water tank is provided with an air outlet channel, and the air outlet channel is designed in an increasing ladder shape from right to left.

Compared with the prior art, the utility model has the advantages and positive effects that,

the utility model discloses in, it is leading-in hot-blast through the air intake, then blow to erecting the silicon chip of putting in a passageway and standing groove inside to the effect of cooperation gravity can blow in the basin with the water stain on silicon chip surface inside, has changed traditional sealed and has dried, can blow off the water stain on silicon chip surface in advance, then dries remaining water stain through hot-blast quick, has promoted drying efficiency.

Drawings

Fig. 1 shows a schematic perspective view of a structure provided according to an embodiment of the present invention;

fig. 2 shows a schematic perspective sectional structure diagram of a grid and an insertion rod provided according to an embodiment of the present invention.

Illustration of the drawings:

110. a base plate; 120. a cover plate; 130. an air inlet; 131. a fan; 132. a heating resistor; 133. a filter screen; 140. a main channel; 150. a branch channel; 160. a placement groove; 170. a water tank; 180. an air outlet channel; 190. a water outlet; 191. an electric telescopic rod.

Detailed Description

In order to make the above objects, features and advantages of the present invention more clearly understood, the present invention will be further described with reference to the accompanying drawings and examples. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the present invention is not limited to the limitations of the specific embodiments of the present disclosure.

As shown in fig. 1 and fig. 2, in the embodiment of the present invention: a monocrystalline silicon wafer heat treatment device comprises a bottom plate 110, a cover plate 120 covers the bottom plate 110, an air inlet 130 is formed in the top of the cover plate 120, air enters from the air inlet 130, a main channel 140 is formed below the air inlet 130, a branch channel 150 is formed below the main channel 140, a placing groove 160 matched with the branch channel 150 is formed above the bottom plate 110, a closed cavity can be formed by the branch channel 150 and the placing groove 160 after a silicon wafer is placed in the placing groove 160, the water accumulated on the surface of the silicon wafer can be blown off by matching with hot air blown out from the air inlet 130, the traditional whole drying mode is changed, all accumulated water is not required to be dried, only water stains remained on the surface of the silicon wafer are dried, a water tank 170 is formed in the bottom of the bottom plate 110, and the blown accumulated water can be collected;

the air inlet 130 is internally provided with a fan 131, the fan 131 can suck cold air into the air inlet 130, a heating resistor 132 is arranged above the fan 131, and the heating resistor 132 heats the sucked cold air and blows the cold air to the main channel 140 and the branch channels 150.

An electric telescopic rod 191 is installed on the top of the bottom plate 110, and the output end of the electric telescopic rod 191 is connected to the cover plate 120.

Through the above design, the distance between the cover plate 120 and the base plate 110 can be controlled, which is convenient for a worker to put in a silicon wafer.

The branch channels 150 are provided with seven groups, and the widths of the groups are gradually increased from left to right.

Through the design, the silicon wafer processing device can be suitable for silicon wafers with different thicknesses.

The bottom wall of the placement groove 160 is designed to be hollow, so that the placement groove 160 can be communicated with the water tank 170.

Through the above design, the accumulated water blown off from the silicon wafer can fall into the water tank 170.

The top wall of the air inlet 130 is connected with a filter screen 133.

Through the above design, dust is prevented from entering the inside of the air inlet 130.

The water tank 170 has a water outlet 190 formed at the right side thereof, and the water outlet 190 is inclined in a horizontal direction.

With the above configuration, accumulated water in the water tank 170 can be discharged.

The left side of the water tank 170 is provided with an air outlet channel 180, and the air outlet channel 180 is designed in an increasing ladder shape from right to left.

Through the design, hot air can be discharged along the air outlet channel 180, and solid-liquid separation is realized.

To sum up, the utility model discloses a theory of operation does: start electric telescopic handle 191, with apron 120 jack-up, then put into the standing groove 160 with the silicon chip inside, start electric telescopic handle 191 again, reset apron 120, start fan 131 and heating resistor 132, begin to induced draft and heat, inside the leading-in cavity that props up passageway 150 and standing groove 160 and form through main channel 140, dry the silicon chip of putting vertically, blow in the inside back of basin 170 along outlet 190 discharge with the ponding on silicon chip surface fast, and hot-blast discharge by air-out passageway 180, realize gas-liquid separation.

The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in other forms, and any person skilled in the art may use the above-mentioned technical contents to change or modify the equivalent embodiments into equivalent variations to apply to other fields, but all those persons do not depart from the technical contents of the present invention, and any simple modification, equivalent variation and modification made to the above embodiments according to the technical matters of the present invention still belong to the protection scope of the technical solution of the present invention.

Claims

1. A single crystal silicon wafer heat treatment apparatus comprising a base plate (110), characterized in that: the cover plate (120) is covered above the bottom plate (110), the top of the cover plate (120) is provided with an air inlet (130), a main channel (140) is arranged below the air inlet (130), a branch channel (150) is arranged below the main channel (140), a placing groove (160) matched with the branch channel (150) is arranged above the bottom plate (110), and the bottom of the bottom plate (110) is provided with a water tank (170);

air intake (130) internally mounted has fan (131), and fan (131) top installs heating resistor (132).

2. The heat processor for single-crystal silicon wafers according to claim 1, wherein: electric telescopic rod (191) are installed at bottom plate (110) top, and electric telescopic rod (191) output connects in apron (120).

3. The thermal processor for single-crystal silicon wafers according to claim 2, wherein: the branch channels (150) are provided with seven groups, and the widths of the seven groups are sequentially increased from left to right.

4. The heat processor for single-crystal silicon wafers according to claim 3, wherein: the bottom wall of the placing groove (160) is designed in a hollow shape, so that the placing groove (160) can be communicated with the water tank (170).

5. The heat processor for single-crystal silicon wafers according to claim 4, wherein: the top wall of the air inlet (130) is connected with a filter screen (133).

6. The heat processor for single-crystal silicon wafers according to claim 5, wherein: the right side of the water tank (170) is provided with a water outlet (190), and the water outlet (190) is inclined in a shape of being higher at the left and lower at the right.

7. The thermal processor for single-crystal silicon wafers according to claim 5, wherein: an air outlet channel (180) is formed in the left side of the water tank (170), and the air outlet channel (180) is designed in an increasing step shape from right to left.