CN218524975U - Laser emission assembly, silicon optical integrated chip and laser - Google Patents
Laser emission assembly, silicon optical integrated chip and laser Download PDFInfo
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- CN218524975U CN218524975U CN202222760192.9U CN202222760192U CN218524975U CN 218524975 U CN218524975 U CN 218524975U CN 202222760192 U CN202222760192 U CN 202222760192U CN 218524975 U CN218524975 U CN 218524975U
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- 230000003287 optical effect Effects 0.000 title claims abstract description 211
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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Abstract
The utility model relates to a laser emission subassembly, silicon optical integrated chip and laser instrument, wherein, the laser emission subassembly includes: the system comprises a band-pass filter, a splitter, a first micro-ring modulator, a second micro-ring modulator and a common waveguide; the band-pass filter filters and outputs the optical signal; the splitter splits the optical signal from the band pass filter into first and second optical signals; one part of the first optical signal is output outwards, and the other part of the first optical signal returns to the band-pass filter after sequentially passing through the first micro-ring modulator, the common waveguide, the second micro-ring modulator and the splitter; one part of the second optical signal is output outwards, and the other part of the second optical signal returns to the band-pass filter after passing through the second micro-ring modulator, the common waveguide, the first micro-ring modulator and the splitter in sequence; wherein, the modulation directions of the first and the second micro-ring modulators on the optical signals are opposite. The utility model discloses a modulation signal's high quality.
Description
Technical Field
The utility model relates to a laser technical field especially relates to a laser emission subassembly, silicon optical integrated chip and laser instrument.
Background
With the development of laser technology, silicon optical chips have received more and more attention in the field of optical communications because of their advantages such as small size and easy integration, and are widely regarded as key technologies in the next generation of networks. The external cavity type directly modulated laser using the silicon optical chip is developing towards the trend of small volume, low power consumption and high speed.
In the related art, it has been realized at present that an external cavity type directly tuned laser is implemented by using a micro-ring modulator as an external cavity mirror and a Semiconductor Optical Amplifier (RSOA, i.e., a Semiconductor gain chip) in a hybrid integration manner, the micro-ring resonator is used as both a Reflective cavity and a modulator of the laser, and the output of the laser is modulated by the modulation effect of the micro-ring modulator.
However, when the modulation micro-ring resonant cavity is adopted, the wavelength of the micro-ring resonant cavity shifts, so that the reflectivity of the gain medium chip of the laser is changed, the mode hopping phenomenon of the laser is caused, and the quality of a modulation signal of the laser is reduced.
SUMMERY OF THE UTILITY MODEL
In view of the above, it is desirable to provide a laser emitting device, a silicon optical integrated chip and a laser, which can solve the problem of low quality of the modulation signal.
In a first aspect, the present invention provides a laser transmitter assembly, which includes a band pass filter, a splitter, a first micro-ring modulator, a second micro-ring modulator, and a common waveguide; one end of the splitter is coupled with the band-pass filter, the other end of the splitter is coupled with the first micro-ring modulator and the second micro-ring modulator respectively, and the common waveguide couples the first micro-ring modulator and the second micro-ring modulator; wherein:
the band-pass filter is used for coupling with an external semiconductor optical amplifier, filtering an optical signal from the semiconductor optical amplifier, or filtering an optical signal returned by the shunt and outputting the optical signal to the semiconductor optical amplifier;
the splitter is used for splitting the optical signal from the band-pass filter into a first optical signal and a second optical signal;
one part of the first optical signal is output outwards, and the other part of the first optical signal is coupled into the first micro-ring modulator, passes through the common waveguide, the second micro-ring modulator and the splitter in sequence and then returns to the band-pass filter;
one part of the second optical signal is output outwards, and the other part of the second optical signal is coupled into the second micro-ring modulator and returns to the band-pass filter after sequentially passing through the common waveguide, the first micro-ring modulator and the splitter;
the modulation direction of the first micro-ring modulator on the optical signal is opposite to that of the second micro-ring modulator on the optical signal.
In one embodiment, the band pass filter includes a mode converter and a bragg grating, the bragg grating being coupled with the mode converter, the mode converter being further coupled with the splitter and the semiconductor optical amplifier, respectively, wherein:
the mode converter is used for inputting the optical signal from the semiconductor optical amplifier into the Bragg grating for filtering and outputting the filtered optical signal to the splitter; or, the optical amplifier is configured to input the optical signal returned by the splitter into the bragg grating for filtering, and output the filtered optical signal to the semiconductor optical amplifier.
In one embodiment, the mode converter comprises a first terminal, a second terminal, and a third terminal, wherein:
a first end of the mode converter to receive an optical signal in a first mode; wherein the optical signal in the first mode is an optical signal from the semiconductor optical amplifier or an optical signal returned by the splitter;
a second end of the mode converter, configured to receive an optical signal in a second mode reflected by the bragg grating after the optical signal in the first mode is input into the bragg grating for filtering;
and a third end of the mode converter is configured to output the optical signal of the first mode obtained by converting the optical signal of the second mode to the semiconductor optical amplifier or the splitter.
In one embodiment, the splitter includes a first transmission waveguide, a second transmission waveguide, and a third transmission waveguide, the first transmission waveguide is coupled to the band pass filter, the second transmission waveguide and the third transmission waveguide are respectively coupled to the first transmission waveguide, the second transmission waveguide is coupled to the first micro-ring modulator, and the third transmission waveguide is coupled to the second micro-ring modulator.
In one embodiment, the first micro-ring modulator comprises a first micro-ring resonator and a first heating electrode, the first micro-ring resonator is coupled with the second transmission waveguide, and the first heating electrode is coupled with the first micro-ring resonator for adjusting a resonant peak of the first micro-ring resonator;
the second micro-ring modulator comprises a second micro-ring resonant cavity and a second heating electrode, the second micro-ring resonant cavity is coupled with the third transmission waveguide, and the second heating electrode is coupled with the second micro-ring resonant cavity and used for adjusting a resonance peak of the second micro-ring resonant cavity.
In one embodiment, the laser emitting component further comprises a phase shifter coupled between the band pass filter and the splitter, the phase shifter being configured to adjust an operating wavelength of the band pass filter on the optical signal.
In the laser emission component, the band-pass filter is integrated between the first micro-ring modulator and the semiconductor optical amplifier, and the band-pass filter can effectively inhibit mode hopping caused by factors such as side mode rejection ratio reduction and resonant peak drift of the semiconductor optical amplifier, and is beneficial to improving the quality of a modulation signal emitted by the laser emission component.
In a second aspect, the present invention provides a silicon optical integrated chip, wherein the laser emitting component is integrated on the silicon optical integrated chip.
In one embodiment, the III-V material and the silicon material in the silicon optical integrated chip are connected through a silicon nitride material.
In the silicon optical integrated chip, the quality of the modulation signal emitted by the silicon optical integrated chip can be ensured by the arrangement of the laser emission component.
In a third aspect, the present invention provides a laser, which comprises the above-mentioned silicon optical integrated chip and semiconductor optical amplifier, wherein the band-pass filter of the silicon optical integrated chip is coupled to the semiconductor optical amplifier.
In one embodiment, the semiconductor optical amplifier is coupled to the band pass filter by end face coupling or grating coupling.
In the laser, the quality of the modulation signal emitted by the laser can be ensured through the arrangement of the silicon optical integrated chip.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the descriptions of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the following descriptions are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic block diagram of a laser emitting assembly according to one embodiment;
FIG. 2 is a schematic diagram of the structure of a bandpass filter according to one embodiment;
fig. 3 is a schematic structural diagram of a laser emitting assembly according to an embodiment.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, as those skilled in the art will be able to make similar modifications without departing from the spirit and scope of the present invention.
In the description of the present invention, it is to be understood that the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means one or more, and "a plurality" means at least two, such as two, three, etc., unless otherwise specifically limited, wherein the meaning of "a plurality of groups", "a plurality of paths", and "a plurality of beams" are the same, and are not repeated one by one herein.
In the present disclosure, unless otherwise explicitly stated or limited, the terms "mounted," "connected," "fixed," "coupled," and the like are to be construed broadly, e.g., as fixed or detachable connections or integral parts; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Referring to fig. 1, the present invention provides a laser transmitter assembly 100, which includes a Band-pass filter 110 (Band-pass filter), a splitter 120, a first micro-ring modulator 130, a second micro-ring modulator 140, and a common waveguide 150.
Specifically, one end of the splitter 120 is coupled to the band pass filter 110, and the other end of the splitter is coupled to the first micro-ring modulator 130 and the second micro-ring modulator 140, respectively, and the common waveguide 150 couples the first micro-ring modulator 130 and the second micro-ring modulator 140 in cascade, so that the first micro-ring modulator 130 and the second micro-ring modulator 140 can achieve a push-pull operating state, that is, the first micro-ring modulator 130 and the second micro-ring modulator 140 can be loaded with differential signals, so that the first micro-ring modulator 130 and the second micro-ring modulator 140 can perform push-pull modulation on optical signals. Wherein:
a band-pass filter 110 capable of allowing optical signals having a wavelength within a bandwidth thereof to pass therethrough, but inhibiting optical signals having a wavelength outside the bandwidth thereof from passing therethrough, thereby performing band-pass filtering on the optical signals input thereto; specifically, it is used for coupling with the external semiconductor optical amplifier 200, filtering the optical signal from the semiconductor optical amplifier 200, or filtering the optical signal returned from the splitter 120 and outputting the optical signal to the semiconductor optical amplifier 200.
And a splitter 120 for splitting the optical signal from the band pass filter 110 into a first optical signal and a second optical signal.
One part of the first optical signal is output outwards through the output waveguide, and the other part of the first optical signal is coupled into the first micro-ring modulator 130, and returns to the band-pass filter 110 after passing through the common waveguide 150, the second micro-ring modulator 140 and the splitter 120 in sequence; it should be noted that the structural forms and free spectral ranges of the first micro-ring modulator 130 and the second micro-ring modulator 140 are substantially the same, and the difference between the two is that the modulation directions of the optical signals are opposite, that is, the modulation direction of the optical signals by the first micro-ring modulator 130 is opposite to the modulation direction of the optical signals by the second micro-ring modulator 140. For example, in some embodiments, in the push-pull operating state, the first optical signal is coupled into the first micro-ring modulator 130, if the first optical signal is transmitted in the clockwise direction in the first micro-ring modulator 130, the first micro-ring modulator 130 performs positive-phase modulation on the first optical signal transmitted in the clockwise direction, and then the modulated signal is coupled into the second micro-ring modulator 140 through the common waveguide 150, at this time, the optical signal input to the second micro-ring modulator 140 is transmitted in the counterclockwise direction in the second micro-ring modulator 140, the second micro-ring modulator 140 performs inverse-phase modulation on the optical signal transmitted in the counterclockwise direction, and the modulated optical signal is transmitted to the splitter 120 and then returns to the band-pass filter 110. In the optical signal modulation process, namely under the same input electrical signal, the resonant peaks of the first and second micro-ring modulators modulated on the optical signal move in opposite directions, so that the positions of the resonant peaks of the first and second micro-ring modulators are exchanged, and therefore, the change of the positions of the resonant peaks counteracts the change of the resonant cavity reflection of the first and second micro-ring modulators in the modulation process.
One part of the second optical signal is output outwards, and the other part of the second optical signal is coupled into the second micro-ring modulator 140, and returns to the band-pass filter 110 after passing through the common waveguide 150, the first micro-ring modulator 130 and the splitter 120 in sequence; specifically, in some embodiments, in the push-pull operating state, the second optical signal is coupled into the second micro-ring modulator 140, if the second optical signal is transmitted in the clockwise direction in the second micro-ring modulator 140, the second micro-ring modulator 140 performs positive-phase modulation on the clockwise transmitted second optical signal, and then the modulated signal is coupled into the first micro-ring modulator 130 through the common waveguide 150, at this time, the optical signal input to the first micro-ring modulator 130 is transmitted in the counterclockwise direction in the first micro-ring modulator 130, the first micro-ring modulator 130 performs inverse-phase modulation on the counterclockwise transmitted optical signal, and the modulated optical signal is transmitted to the splitter 120 and then returns to the band-pass filter 110.
In the above-mentioned assembly, the band-pass filter 110 is integrated between the first and second micro-ring modulators and the semiconductor optical amplifier 200, and since the band-pass filter 110 can only allow the optical signal with the wavelength within the band-pass range to pass, the optical signal with the wavelength outside the band-pass range of the band-pass filter 110 cannot be reflected to the semiconductor optical amplifier 200 through the band-pass filter 110, thereby avoiding the phenomenon that the reflectivity of the semiconductor optical amplifier 200 to the optical signal changes, and thus effectively suppressing the mode hopping phenomenon caused by the factors such as the reduction of the side mode suppression ratio and the drift of the resonance peak of the semiconductor optical amplifier 200, and being beneficial to improving the quality of the modulation signal transmitted by the laser transmitting assembly 100.
It should be noted that the structural form of the band-pass filter 110 is not limited, and the specific structural form of the band-pass filter 110 can be adjusted according to the filtering requirement of the actual optical signal. For example, as shown in fig. 1-2, in some embodiments, the band pass filter 110 includes a mode converter 111 and a bragg grating 112, the bragg grating 112 is coupled with the mode converter 111, and the mode converter 111 is coupled with the semiconductor optical amplifier 200 and the splitter 120, respectively, wherein:
the mode converter 111 is configured to input an optical signal from the semiconductor optical amplifier 200 to the bragg grating 112 for filtering, and output the filtered optical signal to the splitter 120, or input an optical signal returned by the splitter 120 to the bragg grating 112 for filtering, and output the filtered optical signal to the semiconductor optical amplifier 200.
Further, the mode converter 111 includes a first terminal 1111, a second terminal 1112, and a third terminal (not shown), wherein the first terminal 1111 and the third terminal are coupled to the semiconductor optical amplifier 200 and the splitter 120, and the second terminal 1112 is coupled to the bragg grating 112, wherein:
the first end 1111 serves as an optical signal receiving end of the mode converter 111, and is configured to receive an optical signal of the first mode (i.e., a TE 0-based mode optical signal) from the semiconductor optical amplifier 200 or returned by the splitter 120;
the second end 1112 is used as an optical signal receiving end of the mode converter 111, and is configured to input the optical signal in the first mode into the bragg grating 112 for filtering, and receive the optical signal in the second mode (i.e., the TE1 higher-order mode optical signal) reflected by the bragg grating 112;
the third terminal is used as an optical signal output terminal of the mode converter 111, and is used for outputting the optical signal of the first mode obtained by converting the optical signal of the second mode to the semiconductor optical amplifier 200 or the splitter 120.
The specific operation principle of the band-pass filter 110 composed of the mode converter 111 and the bragg grating 112 is as follows:
in the process of outputting the optical signal from the semiconductor optical amplifier 200 to the splitter 120 through the bandpass filter 110, first, the semiconductor optical amplifier 200 inputs the optical signal in the first mode to the mode converter 111 through the first end 1111, and then the mode converter 111 inputs the optical signal in the first mode to the bragg grating 112 through the second end 1112 for performing bandpass filtering processing, and the optical signal in the first mode does not have loss when entering the bragg grating 112 through the mode converter 111; then, the bragg grating 112 converts the optical signal of the first mode with the wavelength in the band-pass range thereof into the optical signal of the second mode, and then reflects the optical signal of the second mode back to the mode converter 111 through the second end 1112; finally, the optical signal in the second mode is downloaded to the optical signal in the first mode when passing through the mode converter 111, and then is output to the splitter 120 through the third end. Of course, in the process of transmitting the optical signal from the splitter 120 through the band pass filter 110 and reflecting the optical signal back to the semiconductor optical amplifier 200, the mode conversion principle of the optical signal in the band pass filter 110 is substantially the same as the above-mentioned process, and will not be described herein again.
In the above embodiment, the band-pass filter 110 formed by the mode converter 111 and the bragg grating 112 together makes the insertion loss of the device small, and does not cause loss to the optical signal when the band-pass filter 110 is used for performing band-pass filtering processing, and the band-pass range of the bragg grating 112 is enough to cover the whole micro-ring modulator (i.e. the first or second micro-ring modulator), so that the band-pass filter 110 can be well matched with the micro-ring modulator; in addition, due to the introduction of the band-pass filter 110 with the above structure, the mode-hopping phenomenon of the laser emitting assembly 100 can be effectively suppressed, and the working performance and stability of the laser emitting assembly 100 are further improved, so that the quality of the modulation signal is improved.
As shown in fig. 1 and 3, in some embodiments, the splitter 120 includes a first transmission waveguide 121, a second transmission waveguide 122, and a third transmission waveguide 123, the first transmission waveguide 121 is coupled to the band pass filter 110, the second transmission waveguide 122 and the third transmission waveguide 123 are respectively coupled to the first transmission waveguide 121, the second transmission waveguide 122 is coupled to the first micro-ring modulator 130, and the third transmission waveguide 123 is coupled to the second micro-ring modulator 140. Wherein:
in the process that the laser emitting assembly 100 outputs the optical signal from the semiconductor optical amplifier 200 to the outside, the first transmission waveguide 121 is used to split the optical signal from the bandpass filter 110 into a first optical signal and a second optical signal, the second transmission waveguide 122 is used to couple the first optical signal to the first micro-ring modulator 130, and the third transmission waveguide 123 is used to couple the second optical signal to the second micro-ring modulator 140;
in the process of reflecting the laser emitting assembly 100 back to the semiconductor optical amplifier 200, the second transmission waveguide 122 is used for receiving the optical signal reflected back to the splitter 120 by the first micro-ring modulator 130 and inputting the optical signal to the band pass filter 110 through the first transmission waveguide 121, and the third transmission waveguide 123 is used for receiving the optical signal reflected back to the splitter 120 by the second micro-ring modulator 140 and inputting the optical signal to the band pass filter 110 through the first transmission waveguide 121.
It is worth mentioning that the specific structure of the splitter 120 is not limited, and may include, but not limited to, a 1 × 2 MMI-type optical switch, a 2 × 2 MMI-type optical switch, or a directional coupler of 50.
As shown in fig. 1 and 3, in some embodiments, the first micro-ring modulator 130 includes a first micro-ring resonator 131 and a first heating electrode 132, the first micro-ring resonator 131 is coupled to the second transmission waveguide 122 and the common waveguide 150, respectively, and the first heating electrode 132 is coupled to the first micro-ring resonator 131 for adjusting a resonant peak of the first micro-ring resonator 131; the second micro-ring modulator 140 includes a second micro-ring resonator 141 and a second heater electrode 142, the second micro-ring resonator 141 is coupled to the third transmission waveguide 123, and the second heater electrode 142 is coupled to the second micro-ring resonator 141 for adjusting a resonance peak of the second micro-ring resonator 141.
It is worth mentioning that the first heater electrode 132 and the second heater electrode 142 include, but are not limited to, one of a metal heater electrode and a silicon heater electrode.
In the above embodiment, the first heating electrode 132 and the second heating electrode 142 are used to compensate for the machining error between the first micro-ring resonator 131 and the second micro-ring resonator 141, so as to effectively avoid the central wavelengths of the first micro-ring resonator 131 and the second micro-ring resonator 141 from being deviated, and to align the central wavelengths of the first micro-ring resonator 131 and the second micro-ring resonator 141; in addition, the adjustment of the first micro-ring resonator 131 by the first heating electrode 132 and the adjustment of the second micro-ring resonator 141 by the second heating electrode 142 are performed independently, so that the first micro-ring resonator 131 and the second micro-ring resonator 141 can be adjusted to appropriate positions independently, the mutual interference between the first micro-ring resonator and the second micro-ring resonator during the adjustment process is avoided, the reliability of the resonant peak adjustment can be effectively ensured, the working performance of the laser emitting assembly 100 can be improved, and the quality of the modulation signal can be improved 。
As shown, in some embodiments, the laser emitting assembly 100 further includes a phase shifter 160, the phase shifter 160 is coupled between the band pass filter 110 and the splitter 120, and the phase shifter 160 is used for adjusting the operating wavelength of the band pass filter 110 to the optical signal. Specifically, the longitudinal mode position of the laser emitting component 100 can be adjusted by the phase shifter 160, so that the reflectivity of the longitudinal mode under the narrow-band reflection spectrum of the cascade micro-ring modulator formed by the first and second micro-ring modulators is much larger than that of other longitudinal modes, which is beneficial to ensuring the working performance of the laser emitting component 100 and the quality of the modulation signal.
It is to be understood that the structural form of the waveguide in the above embodiments is not limited, and the waveguide includes, but is not limited to, at least one of an SOI silicon-based optical waveguide, an SiN silicon-based optical waveguide, and a lithium niobate optical waveguide.
It will be appreciated that in some embodiments, the phase shifter includes, but is not limited to, one of a phase shifter constructed from an SOI silicon-based optical waveguide and a PIN junction diode, and a phase shifter constructed from an SOI silicon-based optical waveguide and a metal heater. The phase shifter is used for performing phase modulation by adopting an electro-optic effect of a PIN junction diode or performing phase modulation by adopting a metal electrode thermal modulation mode so as to realize high-speed phase modulation, the phase modulation speed can reach a GHz (gigahertz, or gigahertz) level, and the spectrum scanning efficiency of the laser is favorably improved.
The utility model also provides a silicon optical integrated chip (not shown), foretell laser emission subassembly is integrated on silicon optical integrated chip, should be provided with and do benefit to the integration that improves semiconductor optical amplifier.
In some embodiments, the III-V material and the silicon material in the silicon optical integrated chip are connected through the silicon nitride material, and the arrangement can enable the change of the overall equivalent refractive index of the laser emission component to be consistent with the change of the effective refractive index of the first micro-ring modulator and the second micro-ring modulator.
In the silicon photonic integrated chip (not shown), the quality of the modulation signal emitted from the silicon photonic integrated chip can be ensured by the arrangement of the laser emitting module.
The utility model also provides a laser instrument, it includes foretell silicon optical integrated chip and semiconductor optical amplifier, silicon optical integrated chip's band pass filter and semiconductor optical amplifier coupling.
In some embodiments, the semiconductor optical amplifier is coupled with the band-pass filter by means of end-face coupling or grating coupling, and the semiconductor optical amplifier is efficiently coupled with the band-pass filter on the silicon optical integrated chip by the arrangement, so that the external cavity type tunable laser is formed.
In the laser, the quality of the modulation signal emitted by the laser can be ensured through the arrangement of the silicon optical integrated chip.
All possible combinations of the technical features in the above embodiments may not be described for the sake of brevity, but should be considered as being within the scope of the present disclosure as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is more specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the concept of the present invention, several variations and modifications can be made, which all fall within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (10)
1. A laser transmitter assembly comprising a bandpass filter, a splitter, a first microring modulator, a second microring modulator, and a common waveguide; one end of the splitter is coupled with the band-pass filter, the other end of the splitter is coupled with the first micro-ring modulator and the second micro-ring modulator respectively, and the common waveguide couples the first micro-ring modulator and the second micro-ring modulator; wherein:
the band-pass filter is used for coupling with an external semiconductor optical amplifier, filtering an optical signal from the semiconductor optical amplifier, or filtering an optical signal returned by the shunt and outputting the optical signal to the semiconductor optical amplifier;
the splitter is used for splitting the optical signal from the band-pass filter into a first optical signal and a second optical signal;
one part of the first optical signal is output outwards, and the other part of the first optical signal is coupled into the first micro-ring modulator and returns to the band-pass filter after sequentially passing through the common waveguide, the second micro-ring modulator and the splitter;
one part of the second optical signal is output outwards, and the other part of the second optical signal is coupled into the second micro-ring modulator, passes through the common waveguide, the first micro-ring modulator and the splitter in sequence and then returns to the band-pass filter;
the modulation direction of the first micro-ring modulator on the optical signal is opposite to that of the second micro-ring modulator on the optical signal.
2. The laser emitting assembly of claim 1, wherein the band pass filter comprises a mode converter and a bragg grating, the bragg grating coupled with the mode converter, the mode converter further coupled with the splitter and the semiconductor optical amplifier, respectively, wherein:
the mode converter is used for inputting the optical signal from the semiconductor optical amplifier into the bragg grating for filtering, and outputting the filtered optical signal to the splitter; or, the optical amplifier is configured to input the optical signal returned by the splitter into the bragg grating for filtering, and output the filtered optical signal to the semiconductor optical amplifier.
3. The laser emitting assembly of claim 2, wherein the mode converter comprises a first terminal, a second terminal, and a third terminal, wherein:
a first end of the mode converter for receiving an optical signal in a first mode; wherein the optical signal in the first mode is an optical signal from the semiconductor optical amplifier or an optical signal returned by the splitter;
a second end of the mode converter, configured to receive the optical signal in the second mode reflected by the bragg grating after the optical signal in the first mode is input into the bragg grating for filtering;
and a third end of the mode converter is configured to output the optical signal of the first mode obtained by converting the optical signal of the second mode to the semiconductor optical amplifier or the splitter.
4. The laser emitting assembly of claim 1, wherein the splitter comprises a first transmission waveguide, a second transmission waveguide, and a third transmission waveguide, the first transmission waveguide being coupled to the band pass filter, the second transmission waveguide and the third transmission waveguide being respectively coupled to the first transmission waveguide, and the second transmission waveguide being coupled to the first micro-ring modulator, and the third transmission waveguide being coupled to the second micro-ring modulator.
5. The laser transmitter assembly of claim 4, wherein the first micro-ring modulator comprises a first micro-ring resonator and a first heater electrode, the first micro-ring resonator being coupled to the second transmission waveguide, the first heater electrode being coupled to the first micro-ring resonator for adjusting a peak resonance of the first micro-ring resonator;
the second micro-ring modulator comprises a second micro-ring resonant cavity and a second heating electrode, the second micro-ring resonant cavity is coupled with the third transmission waveguide, and the second heating electrode is coupled with the second micro-ring resonant cavity and used for adjusting a resonance peak of the second micro-ring resonant cavity.
6. The laser emitting assembly of claim 1, further comprising a phase shifter coupled between the band pass filter and the splitter, the phase shifter configured to adjust an operating wavelength of the band pass filter to an optical signal.
7. A silicon photonic integrated chip, wherein the laser emitting device of any one of claims 1 to 6 is integrated on the silicon photonic integrated chip.
8. The silicon photonic integrated chip according to claim 7, wherein the silicon material and the III-V material in the silicon photonic integrated chip are connected by a silicon nitride material.
9. A laser comprising a silicon photonic integrated chip according to any of claims 7 to 8 and a semiconductor optical amplifier, wherein a bandpass filter of the silicon photonic integrated chip is coupled to the semiconductor optical amplifier.
10. A laser as claimed in claim 9, wherein the semiconductor optical amplifier is coupled to the bandpass filter by end-coupling or grating coupling.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222760192.9U CN218524975U (en) | 2022-10-20 | 2022-10-20 | Laser emission assembly, silicon optical integrated chip and laser |
| PCT/CN2023/114556 WO2024082809A1 (en) | 2022-10-20 | 2023-08-24 | Laser emitting assembly, silicon optical integrated chip, and laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222760192.9U CN218524975U (en) | 2022-10-20 | 2022-10-20 | Laser emission assembly, silicon optical integrated chip and laser |
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| WO (1) | WO2024082809A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024082809A1 (en) * | 2022-10-20 | 2024-04-25 | 苏州旭创科技有限公司 | Laser emitting assembly, silicon optical integrated chip, and laser device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US9939663B2 (en) * | 2013-10-24 | 2018-04-10 | Oracle International Corporation | Dual-ring-modulated laser that uses push-pull modulation |
| US20190058306A1 (en) * | 2017-08-18 | 2019-02-21 | Futurewei Technologies, Inc. | Efficient Wavelength Tunable Hybrid Laser |
| CN108923250B (en) * | 2018-07-25 | 2020-10-30 | 中国科学院半导体研究所 | On-chip integrated Fourier mode-locked laser |
| CN113900312A (en) * | 2020-06-22 | 2022-01-07 | 苏州旭创科技有限公司 | Silicon-based tunable filter, laser and optical module |
| CN212725953U (en) * | 2020-08-27 | 2021-03-16 | 武汉敏芯半导体股份有限公司 | Hybrid integrated semiconductor laser with high modulation rate |
| CN112202048B (en) * | 2020-10-09 | 2022-02-01 | 联合微电子中心有限责任公司 | External cavity laser, preparation method thereof and wavelength tuning method |
| CN218524975U (en) * | 2022-10-20 | 2023-02-24 | 苏州旭创科技有限公司 | Laser emission assembly, silicon optical integrated chip and laser |
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| WO2024082809A1 (en) * | 2022-10-20 | 2024-04-25 | 苏州旭创科技有限公司 | Laser emitting assembly, silicon optical integrated chip, and laser device |
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