CN218454233U - Double-chamber film growth equipment - Google Patents

Abstract

The utility model belongs to the technical field of the semiconductor film growth, a two-chamber film growth equipment is related to, it includes first growth cavity, second growth cavity (8) and advances appearance room (6), first growth cavity and second growth cavity (8) link to each other through disengagement chamber (14), advance appearance room (6) through transmission chamber (13) with disengagement chamber (14) link to each other, be equipped with manipulator (17) in transmission chamber (13) and disengagement chamber (14), manipulator (17) be used for with advance the substrate in appearance room (6) and pass through transmission chamber (13) and disengagement chamber (14) are carried in first growth cavity or the second growth cavity (8). The method can realize rapid growth switching between different growth chambers, thereby fully utilizing the respective advantages of MBE and MOCVD growth methods to grow the thin film layers with different requirements.

Description

Double-chamber film growth equipment

Technical Field

The utility model belongs to the technical field of semiconductor film grows, a film growth equipment, especially a two-chamber film growth equipment is related to.

Background

Metal Organic Chemical Vapor Deposition (MOCVD) is a relatively common technique for growing compound semiconductor materials. The MOCVD method has moderate growth rate of the grown film and is the only production technology which can realize large-scale commercialization. The method has the advantages that the components, the thickness and the resistivity of the epitaxial layer are controllable, the equipment is simple, the batch production can be realized, in addition, the steep impurity distribution of the epitaxial layer can be realized through the precise regulation and control, and the ideal multilayer film can be favorably grown.

Molecular Beam Epitaxy (MBE) is an ultrahigh vacuum growth method, and compared with the MOCVD method, the method has the advantages of low growth temperature (400-750 ℃), accurate control of the components and thickness of the film, high doping concentration of the P-type film, no need of annealing after growth and the like, and is most suitable for devices with clear growth interfaces and high component control accuracy. The biggest disadvantage limiting the MBE process is however the too low growth rate, typically 0.1-0.152um/h.

Therefore, the MBE film growth method and the MOCVD film growth method have respective advantages and disadvantages, the MOCVD film growth rate is moderate, the growth parameters can be accurately regulated, the MBE film growth rate is slow, the growth temperature is low, annealing after growth is not needed, and the method is more suitable for devices with high control precision of growth components and clear interfaces.

Therefore, in the process of actually growing the film structure, some film layers are suitable for being grown by adopting an MOCVD (metal organic chemical vapor deposition) growth method, namely, the film layers are suitable for being grown in an MOCVD growth chamber, so that the characteristics of high growth rate and controllable parameters in the growth process are fully utilized. Some thin film layers are suitable for MBE growth methods, that is, are suitable for growth in an MBE growth chamber, so that the characteristics of more accurate components and clear interfaces are fully utilized.

However, the existing equipment cannot realize the rapid growth switching of the film growth between the MOCVD growth chamber and the MBE growth chamber, and therefore, the advantages of the MOCVD growth method and the MBE growth method cannot be fully utilized.

In view of the defects of the prior art, there is a need to develop a novel dual chamber film growth apparatus to better solve the above technical problems in the existing semiconductor film growth process.

SUMMERY OF THE UTILITY MODEL

In order to overcome the defects of the prior art, the utility model provides a double-chamber film growth equipment, it can realize the quick growth switching between the different growth chambers to but make full use of MBE and MOCVD growth method advantage separately grow the different thin layer that require.

In order to achieve the above object, the present invention provides the following technical solutions:

the utility model provides a double-chamber film growth equipment, its includes first growth cavity, second growth cavity and sampling chamber, its characterized in that, first growth cavity and second growth cavity link to each other through the separation chamber, the sampling chamber pass through the transmission chamber with the separation chamber links to each other, be equipped with the manipulator in transmission chamber and the separation chamber, the manipulator be used for with substrate in the sampling chamber passes through transmission chamber and separation chamber carry in first growth cavity or the second growth cavity.

Preferably, the first growth chamber is an MOCVD growth chamber and the second growth chamber is an MBE growth chamber.

Preferably, the MOCVD growth chamber is surrounded by a chamber body, a chamber top plate positioned at the top of the chamber body and a chamber bottom plate positioned at the bottom of the chamber body.

Preferably, a water cooling jacket is arranged in the upper end of the MOCVD growth chamber.

Preferably, a first graphite plate is arranged in the MOCVD growth chamber and connected with one end of the supporting rotating shaft.

Preferably, an evacuation pump is arranged on the side wall of the MBE growth chamber.

Preferably, a growth table and a temperature-controlled eruption source furnace are arranged in the MBE growth chamber.

Preferably, an ionization gauge and an electron gun of a reflection high-energy electron diffractometer are further arranged on the side wall of the MBE growth chamber.

Preferably, a second graphite disc is arranged in the sample chamber.

Preferably, first growth chamber with be equipped with first flashboard between the separation chamber, second growth chamber with be equipped with the second flashboard between the separation chamber, the sampling chamber with be equipped with the third flashboard between the transmission chamber.

Compared with the prior art, the utility model discloses a two-chamber film growth equipment has one or more in following beneficial technological effect:

1. the double-chamber is provided with an MBE growth chamber and an MOCVD growth chamber, the double-chamber is used for thin film growth in semiconductor materials, and the advantages of the MBE growth method and the MOCVD growth method can be fully utilized to grow thin film layers with different requirements.

2. The device has a simple structure, is convenient to operate, and can realize rapid growth switching between the MBE and the MOCVD growth chamber.

Drawings

Fig. 1 is a schematic structural diagram of the dual-chamber film growing apparatus of the present invention.

Detailed Description

The present invention is further described with reference to the following drawings and examples, which are not intended to limit the scope of the present invention.

To prior art not enough, the utility model provides a two-chamber film growth equipment, it can realize the quick growth switching between the different growth cavities to but make full use of MBE and MOCVD growth method advantage separately grows the different thin layer that require.

Fig. 1 shows a schematic structural diagram of the dual chamber film growth apparatus of the present invention. As shown in fig. 1, the dual chamber film growth apparatus of the present invention comprises a first growth chamber, a second growth chamber 8 and a sample introduction chamber 6.

Wherein, preferably, the first growth chamber is an MOCVD growth chamber. Thus, a semiconductor thin film can be grown in the first growth chamber by using the MOCVD growth method.

The MOCVD growth chamber is defined by a chamber body 2, a chamber top plate 1 positioned at the top of the chamber body 2 and a chamber bottom plate 5 positioned at the bottom of the chamber body 2. The vacuum environment required for process gas growth can be provided in the MOCVD growth chamber by a vacuum pump.

Preferably, a water cooling jacket 15 is arranged in the upper end of the MOCVD growth chamber. The water cooling jacket 15 plays a role in reducing the temperature of the process gas, so that the process gas entering the MOCVD growth chamber from the chamber top plate 1 of the MOCVD growth chamber can reduce pre-reaction, increase the uniformity of a flow field, and enable the corresponding process gas to generate chemical reaction in the MOCVD growth chamber to grow a corresponding film.

More preferably, a first graphite plate 3 is arranged in the MOCVD growth chamber. The first graphite disc 3 is used for placing a sapphire substrate required for growing a thin film. The first graphite plate 3 is connected with one end of a supporting rotating shaft 4. The other end of the supporting rotating shaft 4 can extend out of the MOCVD growth chamber and is connected with a driving device, such as a rotating motor. The supporting rotating shaft 4 plays a role in supporting the first graphite plate 3 and provides corresponding rotating speed for the first graphite plate 3, and the first graphite plate 3 rotating at high speed can improve the uniformity of a flow field required by film growth.

Furthermore, preferably, the second growth chamber 8 is an MBE growth chamber. Thus, the MBE growth method may be used to grow a semiconductor thin film in the second growth chamber.

And a vacuum pumping pump 9 is arranged on the side wall of the MBE growth chamber 8. The MBE gas-generating chamber 8 can be evacuated to a vacuum degree required for the thin film growth process by the evacuation pump 9.

Preferably, a growth platform 7 and a temperature-controlled eruption source furnace 12 are arranged in the MBE growth chamber 8. A substrate required for thin film growth may be placed on the growth stage 7. And, the temperature-controlled emission source furnace 12 deposits a thin film on the surface of the substrate by the molecular beam emitted from the source striking the surface of the substrate on the growth stage 7.

More preferably, an ionization gauge 10 and an electron gun 11 of a reflection high-energy electron diffractometer (RHEED for short) are further arranged on the side wall of the MBE growth chamber 8. The electron gun 11 of the reflection high-energy electron diffractometer is used for monitoring the growth condition of the film. The ionization gauge 10 is used to measure the vacuum of the MBE growth chamber 8.

A second graphite plate 16 is arranged in the sample chamber 6. The substrate for growing the thin film may be first placed on the second graphite plate 16.

In the present invention, the first growth chamber and the second growth chamber 8 are connected by a separation chamber 14. The sample introduction chamber 6 is connected to the separation chamber 14 via a transfer chamber 13. In the transfer chamber 13 and the separation chamber 14, a robot 17 is provided.

Thus, the robot 17 can transfer the substrate in the loading chamber 6 to the first growth chamber or the second growth chamber 8 through the transfer chamber 13 and the separation chamber 14 according to the requirements of the growth process, thereby facilitating the growth of the semiconductor thin film by adopting different growth processes.

In the present invention, a first shutter 18 is provided between the first growth chamber and the separation chamber 14. When a substrate needs to be placed in the first growth chamber to grow a semiconductor thin film by using the MOCVD method, the first shutter plate 18 is opened so that the robot 17 can place the substrate in the first growth chamber. After the substrate is placed in the first growth chamber, the first shutter 18 is closed to evacuate the first growth chamber and perform thin film growth.

Similarly, a second shutter plate 19 is arranged between the second growth chamber and the separation chamber 14. When a substrate is required to be placed in the second growth chamber 8 to grow a semiconductor thin film by the MBE method, the second shutter 19 is opened to facilitate the robot 17 to place the substrate in the second growth chamber 8. After the substrate is placed in the second growth chamber 8, the second shutter 19 is closed so as to evacuate the second growth chamber and perform thin film growth.

Finally, a third shutter plate 20 is arranged between the sample chamber 6 and the transfer chamber 13. When a substrate needs to be taken out of the sampling chamber 6, the third shutter 20 is opened to facilitate the robot 17 to take out the substrate from the sampling chamber 6. When it is not necessary to take a substrate from the loading chamber 6, the third shutter 20 is closed to prevent a malfunction.

Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention, and do not limit the protection scope of the present invention. Those skilled in the art can modify or substitute the technical solutions of the present invention according to the idea of the present invention without departing from the spirit and scope of the technical solutions of the present invention.

Claims (10)

1. The utility model provides a two-chamber film growth equipment, its includes first growth chamber, second growth chamber (8) and advances appearance room (6), its characterized in that, first growth chamber and second growth chamber (8) link to each other through disengagement chamber (14), advance appearance room (6) through transmission chamber (13) with disengagement chamber (14) link to each other, be equipped with manipulator (17) in transmission chamber (13) and disengagement chamber (14), manipulator (17) are used for with the substrate in advancing appearance room (6) passes through transmission chamber (13) and disengagement chamber (14) are carried in first growth chamber or the second growth chamber (8).

2. The dual chamber thin film growth apparatus of claim 1, wherein the first growth chamber is a MOCVD growth chamber and the second growth chamber (8) is a MBE growth chamber.

3. The dual-chamber film growth apparatus of claim 2, wherein the MOCVD growth chamber is enclosed by a chamber body (2), a chamber top plate (1) located at the top of the chamber body (2), and a chamber bottom plate (5) located at the bottom of the chamber body (2).

4. The dual-chamber film growth apparatus of claim 3, wherein a water cooling jacket (15) is provided in the upper end of the MOCVD growth chamber.

5. The double-chamber film growth equipment according to claim 4, wherein a first graphite plate (3) is arranged in the MOCVD growth chamber, and the first graphite plate (3) is connected with one end of the supporting rotating shaft (4).

6. The twin chamber film growth apparatus of claim 2, wherein the sidewall of the MBE growth chamber is provided with a vacuum pump (9).

7. The twin chamber film growth apparatus of claim 6 in which the MBE growth chamber has a growth stage (7) and a temperature controlled fire source furnace (12) disposed therein.

8. The twin chamber film growth apparatus of claim 7, wherein the sidewall of the MBE growth chamber is further provided with an ionization gauge (10) and an electron gun (11) of a reflection high energy electron diffractometer.

9. The dual-chamber thin film growth apparatus of claim 1, wherein a second graphite plate (16) is provided in the sample introduction chamber (6).

10. The dual chamber film growth apparatus of any of claims 1-9, wherein a first shutter (18) is provided between the first growth chamber and the separation chamber (14), a second shutter (19) is provided between the second growth chamber and the separation chamber (14), and a third shutter (20) is provided between the sample chamber (6) and the transfer chamber (13).

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