CN101170068A - Method for making buffering layer on the base material - Google Patents
Method for making buffering layer on the base material Download PDFInfo
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- CN101170068A CN101170068A CNA2006101507748A CN200610150774A CN101170068A CN 101170068 A CN101170068 A CN 101170068A CN A2006101507748 A CNA2006101507748 A CN A2006101507748A CN 200610150774 A CN200610150774 A CN 200610150774A CN 101170068 A CN101170068 A CN 101170068A
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- base material
- resilient coating
- layer
- zinc oxide
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Abstract
The invention provides a method of manufacturing a buffer layer on base material. Particularly, the invention includes forming a ZnO layer on a sapphire base material with the grain direction (0001), a silicon base material with the grain direction (111), 6H-SiC, 4H-SiC base material or glass base material with the grain direction (0001). The ZnO layer is the buffer layer.
Description
Technical field
The present invention relates to a kind ofly go up to make the method for resilient coating (Buffer layer) in base material (Substrate), and the present invention relates to especially crystallographic direction for example for sapphire (Sapphire) base material of (0001), crystallographic direction for the silicon substrate of (111), crystallographic direction for forming manufacture method on the base materials such as 6H-SiC, 4H-SiC base material or glass baseplate of (0001) as zinc oxide (ZnO) layer of resilient coating.
Background technology
Resilient coating is got involved between base material and the active layer (Active layer) (or micron, nanotube component), for example, between sapphire substrate and gallium nitride layer, got involved resilient coating, be known skill.Therefore, resilient coating can reduce the do not match difference of thermal coefficient of expansion (Thermal expansioncoefficient) between the defect concentration (Defect density) of (Lattice mismatch), active layer and active layer and the base material of lattice between active layer and the base material.
Along with the exploitation as the various materials of resilient coating, zinc oxide (ZnO) is widely used.As resilient coating, measure the defective that confirms to reduce effectively the surface by SEM with zinc oxide film.Especially, to zinc oxide film anneal (Annealing) handle, also be proved the crystalline quality that can promote crystal.
About form the method as the zinc oxide film of resilient coating on base material, now existing radio frequency exchanges sputtering method (RF sputtering), molecular beam epitaxy (MBE) and pulse laser vapour deposition method (PLD) ... etc. method.Related art can be with reference to United States Patent (USP) the 6th, 664, No. 565 patents.
Yet by the understanding to prior art, the character of its formed zinc oxide film (for example, surface morphology) still has the space of lifting.In addition, some prior aries have also increased the complexity on the method.Thus, can be clear that instantly still need a kind of manufacture method that can improve the character of zinc oxide film.
Summary of the invention
Category of the present invention is to provide a kind of method of making resilient coating on base material.Especially, the method according to this invention is for example, and crystallographic direction forms zinc oxide film for silicon substrate, the crystallographic direction of (111) on 6H-SiC, 4H-SiC base material or the glass baseplate of (0001) for sapphire substrate, the crystallographic direction of (0001).
Preferred embodiment according to the present invention is made the manufacture method of resilient coating on base material, at first, alternately supply DEZn (diethylzinc, Zn (C
2H
5)
2) predecessor (Precursors) and H
2O predecessor or O
3Predecessor.Then, this manufacture method is carried out ald (Atomic layer deposition), and then form zinc oxide film on this base material being equal to or less than under 400 ℃ the working temperature.This zinc oxide film is promptly as resilient coating.
According to the manufacture method of preferred embodiment of the present invention, further under the temperature of scope from 400 ℃ to 1200 ℃ to this ZnO layer anneal (Annealing).
Can be further understood by following detailed Description Of The Invention and institute's accompanying drawing about the advantages and spirit of the present invention.
Description of drawings
Figure 1A and Figure 1B cross sectional view are in order to describe the zinc oxide film manufacture method according to a preferred embodiment of the present invention.
The primary clustering symbol description:
10: base material 12: resilient coating
Embodiment
The present invention aims to provide a kind of method of making resilient coating on base material.Especially, in this resilient coating manufacture process, can control thickness, minimizing defect concentration and the reduction depositing temperature that resilient coating generates more accurately.See also shown in Figure 1A and Figure 1B, this figure is that cross sectional view is in order to describe the manufacture method according to a preferred embodiment of the present invention.Below will the manufacture method according to all good specific embodiments of the present invention be elaborated.
At first, shown in Figure 1A,, the base material 10 for preparing is inserted in the reactive tank (Reaction chamber) that is used to carry out ald according to the manufacture method of preferred embodiment of the present invention.
In a specific embodiment, this base material 10 can be that crystallographic direction is that the sapphire substrate of (0001), silicon substrate, the crystallographic direction that crystallographic direction is (111) are 6H-SiC, 4H-SiC base material or the glass baseplate of (0001).
Then, the manufacture method according to preferable specific embodiment of the present invention alternately provides DEZn predecessor and H in this reactive tank
2O predecessor or O
3Predecessor, wherein DEZn is the source of Zn, H
2O or O
3Be the source of O.Then,, in this reactive tank, carry out ald, and then on this base material 10, form zinc oxide (ZnO) layer 12, shown in Figure 1A being equal to or less than under 400 ℃ the working temperature (that is, the maintenance temperature of this base material 10).This zinc oxide film 12 is promptly as this resilient coating.
In a specific embodiment, the reactions steps in the cycle of an ald can be divided into four parts:
1. utilize carrier gas with H
2The O molecule imports reaction cavity, H
2The O molecule can be adsorbed in substrate surface after entering cavity, form simple layer OH base at substrate surface, and its duration of ventilation is 0.1 second.
2. feed carrier gas with the unnecessary H that is not adsorbed in base material
2The O molecule is taken away, and its gassing time is 5 seconds.
3. utilize carrier gas that the DEZn molecule is imported in the reaction cavity, with the simple layer OH base that originally is adsorbed on substrate surface, reaction forms the ZnO of simple layer on base material, and accessory substance is an organic molecule, and its duration of ventilation is 0.1 second.
4. feeding carrier gas is taken away the organic molecule accessory substance that unnecessary DEZn molecule and reaction produce, and its gassing time is 5 seconds.
Wherein carrier gas can adopt highly purified argon gas or nitrogen.More than four steps be called cycle of an ald, can on all surfaces of base material, the grow up film of single atomic layer level thickness of the cycle of an ald, this characteristic is called " limitting film forming certainly " (self-limiting), this characteristic makes ald on the control film thickness, and precision can reach an atomic layer.The cycle times of utilization control ald is the thickness of controlled oxidation zno buffer layer accurately.
In a specific embodiment, this working temperature setting range can be from room temperature to 400 ℃.The preferred range of this working temperature is between 150 degree are spent to 200.
In a specific embodiment, the preferred thickness range of this ZnO layer 12 is between 20nm to 500nm.
Subsequently, in order further to reduce defect concentration, to promote configuration of surface,, can carry out annealing in process to the resilient coating 12 that is coated on this base material 10 according to the manufacture method of all good specific embodiments of the present invention.In a preferred embodiment, the temperature in the annealing process is controlled between 400 ℃ to 1200 ℃, and stove atmosphere (Atmosphere) then is to feed nitrogen or oxygen.
Be different from prior art, the manufacture method of the disclosed zinc oxide film of the present invention has following advantage: (1) can be formed by the atomic level control material; (2) can control the thickness that resilient coating generates more accurately; (3) but large tracts of land production; (4) the excellent uniformity (Uniformity) is arranged; (5) excellent three-dimensional covering property (Conformality) is arranged; (6) no small holes; (7) defect concentration is little; And (8) depositing temperature is low.
Significantly, be different from prior art, the manufacture method of the disclosed zinc oxide film of the present invention, it can control thickness, minimizing defect concentration and reduction depositing temperature that resilient coating generates more accurately in this resilient coating manufacture process.Obvious ground with the formed zinc oxide film of the disclosed manufacture method of the present invention, will help to form continuously the yields and the character of active layer (or micron, nanotube component).
By the above detailed description of preferred embodiments, hope can be known description feature of the present invention and spirit more, and is not to come category of the present invention is limited with above-mentioned disclosed preferred embodiment.On the contrary, its objective is that various changes and equivalence that hope can be contained in the category of claim of institute of the present invention desire application replace.
Claims (5)
1. method of on base material, making resilient coating, this method comprises the following step:
DEZn predecessor and H alternately are provided
2O predecessor or O
3Predecessor; And
Being equal to or less than under 400 ℃ the working temperature, carry out ald, and then on this base material, form zinc oxide (ZnO) layer, this ZnO layer is exactly a resilient coating.
2. method according to claim 1, wherein this operating temperature range is a room temperature to 400 ℃.
3. method according to claim 1, wherein this base material one of is selected from the group of being made up of for 6H-SiC, 4H-SiC base material and the glass baseplate of (0001) for the silicon substrate of (111), crystallographic direction for the sapphire substrate of (0001), crystallographic direction crystallographic direction.
4. method according to claim 1, wherein the thickness of ZnO layer is 20nm to 500nm.
5. method according to claim 1, it further comprises the following step:
Under 400 ℃ to 1200 ℃ temperature, this ZnO layer is annealed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101507748A CN101170068A (en) | 2006-10-26 | 2006-10-26 | Method for making buffering layer on the base material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101507748A CN101170068A (en) | 2006-10-26 | 2006-10-26 | Method for making buffering layer on the base material |
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| CN101170068A true CN101170068A (en) | 2008-04-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2006101507748A Pending CN101170068A (en) | 2006-10-26 | 2006-10-26 | Method for making buffering layer on the base material |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102153132A (en) * | 2011-03-02 | 2011-08-17 | 复旦大学 | Method for preparing high-density zinc oxide nano granules |
| CN104525209A (en) * | 2014-12-24 | 2015-04-22 | 天津大学 | Ferric oxide-zinc ferrite heterojunction film as well as preparation method thereof and application in photocatalysis |
-
2006
- 2006-10-26 CN CNA2006101507748A patent/CN101170068A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102153132A (en) * | 2011-03-02 | 2011-08-17 | 复旦大学 | Method for preparing high-density zinc oxide nano granules |
| WO2012116477A1 (en) * | 2011-03-02 | 2012-09-07 | 复旦大学 | Preparation method of high density zinc oxide nanometer granules |
| EP2514720A1 (en) * | 2011-03-02 | 2012-10-24 | Fudan University | Preparation method of high density zinc oxide nanometer granules |
| CN102153132B (en) * | 2011-03-02 | 2012-11-21 | 复旦大学 | Method for preparing high-density zinc oxide nano granules |
| EP2514720A4 (en) * | 2011-03-02 | 2013-08-21 | Univ Fudan | Preparation method of high density zinc oxide nanometer granules |
| CN104525209A (en) * | 2014-12-24 | 2015-04-22 | 天津大学 | Ferric oxide-zinc ferrite heterojunction film as well as preparation method thereof and application in photocatalysis |
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