CN218447905U

CN218447905U - Semi-annular array type PCB rectifier silicon stack

Info

Publication number: CN218447905U
Application number: CN202222772499.0U
Authority: CN
Inventors: 陈岗; 夏冰成
Original assignee: Anshan Leadsun Electronics Co ltd
Current assignee: Anshan Leadsun Electronics Co ltd
Priority date: 2022-10-20
Filing date: 2022-10-20
Publication date: 2023-02-03
Anticipated expiration: 2032-10-20

Abstract

The utility model provides a semi-annular array PCB rectifier silicon stack, including PCB semi-annular support, PCB horizontal stand and high-voltage diode, PCB semi-annular support include a plurality ofly, a plurality of PCB semi-annular supports arrange in proper order, fix through PCB horizontal stand, semi-annular array evenly installs a plurality of high-voltage diode between two adjacent PCB semi-annular supports; the PCB board adopts the semi-annular support, arrange the high-voltage diode who establishes ties between two PCB semi-annular supports, the high-voltage diode that can establish ties is more, the volume is littleer, arrange the high-voltage diode array of establishing ties between two PCB semi-annular supports, all can dispel the heat around the high-voltage diode, thereby the heat dissipation space of high-voltage diode has been increased, the radiating effect is better, under the condition of the same volume, the high-voltage diode who establishes ties is more, make the withstand voltage effect of component better.

Description

Semi-annular array type PCB rectifier silicon stack

Technical Field

The utility model relates to a silicon rectifier piles technical field especially relates to a semi-ring array PCB silicon rectifier piles.

Background

The silicon stack is formed by connecting a plurality of high-voltage diodes in series and then encapsulating the high-voltage diodes in resin, and is an essential element for converting alternating current into direct current in high-voltage rectification. High voltage devices typically require a large number of high voltage diodes in series. The conventional silicon stack has the structure that a plurality of high-voltage diodes are connected in series, are sealed and poured in resin adhesive, so that the capacity of the silicon stack is limited, and the heat dissipation effect is poor. When the number of high-voltage diodes required to be connected in series in high-voltage equipment is large, the common silicon stack is troublesome to use.

Chinese patent publication No. CN209298111U discloses a three-dimensional structure type rectifying silicon stack, which adopts a natural heat dissipation structure of three-dimensional space to mount high-voltage diodes connected in series on a vertical plate of a PCB, and although the disadvantages of large silicon stack structure and poor heat dissipation effect of a pouring structure are improved, the designed structure is a square structure, and the high-voltage diodes are mounted on the vertical plate of the PCB, the heat dissipation distance between the high-voltage diodes is limited, and the overall volume and the heat dissipation effect are still not ideal.

Disclosure of Invention

In order to solve the technical problem in the background art, the utility model provides a semi-annular array PCB rectifier silicon stack does not install high-voltage diode on the PCB board, but installs the diode between the PCB board, and the radiating effect is better, and semicircular structure makes the volume littleer, and the diode is in large quantity under the same volume condition, and withstand voltage effect is also better.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

the utility model provides a semi-ring array PCB rectifier silicon stack, includes PCB semi-ring support, the horizontal support of PCB and high-voltage diode, PCB semi-ring support include a plurality ofly, a plurality of PCB semi-ring supports arrange in proper order, fix through the horizontal support of PCB, semi-ring array evenly installs a plurality of high-voltage diode between two adjacent PCB semi-ring supports.

Further, still include the base, the base is L type structure, fixes the outside lower extreme at two PCB semi-annular support in the outside.

Furthermore, PCB semi-annular support top and bottom both ends position respectively be equipped with the draw-in groove, the horizontal support of PCB install respectively on the draw-in groove at PCB semi-annular support's top and bottom both ends, fix a plurality of PCB semi-annular supports.

Further, the plurality of high voltage diodes are electrically connected in series.

Compared with the prior art, the beneficial effects of the utility model are that:

1) The PCB adopts a semi-annular structure, and the high-voltage diodes connected in series are arranged between the two PCB semi-annular brackets, so that more high-voltage diodes can be connected in series, and the volume is smaller;

2) The high-voltage diodes connected in series are arranged between the two PCB semi-annular supports in an array manner, and the peripheries of the high-voltage diodes can dissipate heat, so that the heat dissipation space of the high-voltage diodes is increased, and the heat dissipation effect is better;

3) Under the condition of the same volume, the high-voltage diodes connected in series are more, so that the voltage withstanding effect of the element is better.

Drawings

Fig. 1 is a schematic structural diagram of the present invention;

FIG. 2 is a first schematic view of the exploded structure of the present invention;

FIG. 3 is a second schematic view of the exploded structure of the present invention;

fig. 4 is a schematic view of the base structure of the present invention;

fig. 5 is a schematic diagram of the electrical connection of the high voltage diode according to the present invention.

In the figure: the PCB comprises a PCB semi-annular support 2, a PCB transverse support 3, a base 4, a fixing bolt 5, a high-voltage diode 6 and a voltage-sharing resistor.

Detailed Description

The following detailed description of the embodiments of the present invention is made with reference to the accompanying drawings:

as shown in fig. 1-2, a semi-ring array type PCB rectifier silicon stack, includes PCB semi-ring support 1, horizontal support 2 of PCB and a plurality of high voltage diode 5, PCB semi-ring support 1 include a plurality ofly, a plurality of PCB semi-ring support 1 arrange in proper order, fix through horizontal support 2 of PCB, semi-ring array evenly installs a plurality of high voltage diode 5 between two adjacent half ring support 1 of PCB.

As shown in fig. 1-4, the semi-ring array type PCB rectifier silicon stack further comprises a base 3, wherein the base 3 is of an L-shaped structure, a bolt hole matched with a fixing bolt 4 is formed in the erected part of the base 3, and the base is fixed at the lower ends of the outer sides of two outermost PCB semi-ring supports 1 through the fixing bolt 4. The base 3 is used for the utility model discloses a silicon stack's installation is fixed.

As shown in fig. 2-3, the top and bottom ends of the PCB semi-annular bracket 1 are respectively provided with a slot for mounting the PCB transverse bracket 2.PCB semi-annular support 1 be the PCB board of circuit, the both ends welding of high-voltage diode 5 is between two adjacent PCB semi-annular supports 1, has the solder joint that corresponds at high-voltage diode 5 welding position, the middle part of PCB semi-annular support 1 is empty, heat dissipation that can be better. And bolt holes matched with the fixing bolts 4 are punched at the bottom of the PCB semi-annular support 1 at the outermost side.

The PCB horizontal support 2 have three, length is the same, for rectangular shape, installs respectively at PCB semi-annular support 1's top and bottom both ends position, every PCB horizontal support 2 and PCB semi-annular support 1 junction have corresponding square draw-in groove, insert each other between PCB horizontal support 2 and the PCB semi-annular support 1's draw-in groove, with a plurality of PCB semi-annular support 1 fixed moulding.

As shown in fig. 2-3, a voltage equalizing resistor 6 is also installed between two adjacent PCB semi-annular supports 1. One end of the voltage equalizing resistor 6 is welded on the PCB semi-annular support 1 on one side, and the other end of the voltage equalizing resistor is welded on the PCB semi-annular support 1 on the other side. The specific electrical connection structure is shown in fig. 5, a plurality of high-voltage diodes 5 are electrically connected in series, two high-voltage diodes 5 are connected through the inner PCB wiring of the PCB semi-annular support 1, and the high-voltage diodes 5 between the two PCB semi-annular supports 1 are connected in series and then connected in parallel with the voltage-sharing resistor 6. In FIG. 5, D1-D18 are high voltage diodes 5, and RC1-RC3 are voltage equalizing resistors 6.

The above embodiments are implemented on the premise of the technical solution of the present invention, and detailed implementation and specific operation processes are given, but the protection scope of the present invention is not limited to the above embodiments. The methods used in the following examples are conventional methods unless otherwise specified.

Claims

1. The utility model provides a semicircular array PCB rectifier silicon stack which characterized in that, includes PCB semicircular support, the horizontal support of PCB and high-voltage diode, PCB semicircular support include a plurality ofly, a plurality of PCB semicircular supports arrange in proper order, fix through the horizontal support of PCB, a plurality of high-voltage diode of semicircular array evenly mounted between two adjacent PCB semicircular supports.

2. The half-ring array type PCB rectifier silicon stack of claim 1, further comprising a base, wherein the base is L-shaped and fixed at the lower outer ends of the two outermost PCB half-ring supports.

3. The half-ring array type PCB rectifier silicon stack of claim 1, wherein the PCB half-ring support is provided with a slot at each of the top and bottom ends, and the PCB transverse support is respectively mounted on the slots at the top and bottom ends of the PCB half-ring support to fix the PCB half-ring supports.

4. The half-ring array PCB rectifier stack of claim 1 wherein the plurality of high voltage diodes are electrically connected in series.