CN218447885U - Improved groove type grid-connected transistor - Google Patents

Improved groove type grid-connected transistor Download PDF

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Publication number
CN218447885U
CN218447885U CN202222654978.2U CN202222654978U CN218447885U CN 218447885 U CN218447885 U CN 218447885U CN 202222654978 U CN202222654978 U CN 202222654978U CN 218447885 U CN218447885 U CN 218447885U
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shell
transistor
allies oneself
transistor body
fin
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CN202222654978.2U
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吴俊杰
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Shenzhen Changwei Technology Semiconductor Co ltd
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Shenzhen Changwei Technology Semiconductor Co ltd
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Abstract

The utility model discloses an improved generation cell type allies oneself with bars transistor, including shell, allies oneself with bars transistor body, fin and radiator fan, the shell is inside hollow cylindrical casing, and allies oneself with bars transistor establishes in the shell, through an at least fin connection between shell inner wall and the allies oneself with bars transistor body, forms the wind channel between shell, allies oneself with bars transistor body and the fin, and radiator fan installs in shell one end, and the shell other end is equipped with the vent. The beneficial effects of the utility model include: the heat that allies oneself with grid transistor body produced in the course of the work can transmit on the fin to in giving off the wind channel through the fin, can blow in the outside heat of shell into the wind channel through radiator fan and make the circulation of air in the wind channel, thereby can make the heat in the wind channel blow out in passing through the vent wind channel, can reduce the heat on allies oneself with grid transistor body surface fast, and then the life of extension allies oneself with grid transistor body.

Description

Improved groove type grid-connected transistor
Technical Field
The utility model belongs to the technical field of the transistor technique and specifically relates to an improved generation cell type allies oneself with grid transistor is related to.
Background
A transistor is a solid semiconductor device and has a plurality of functions such as detection, rectification, amplification, switching, voltage stabilization, signal modulation, and the like. The transistor, which is a type of variable current switch, is capable of controlling an output current based on an input voltage. Different from a common mechanical switch, the transistor utilizes an electric signal to control the self opening and closing, the switching speed can be very high, and the switching speed in a laboratory can reach more than 100 GHz.
The existing grid-connected transistor can generate a large amount of heat in the use process, the surface temperature of the grid-connected transistor is easily overhigh, and meanwhile, a binding post is easily broken, so that the grid-connected transistor cannot be used, and the service life of the grid-connected transistor is influenced.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to overcome above-mentioned technique not enough, provide an improved generation cell type allies oneself with grid transistor, solve current allies oneself with grid transistor in the use, can produce a large amount of heats, cause allies oneself with grid transistor surface temperature too high easily, the terminal breaks easily simultaneously, causes allies oneself with the unable use of grid transistor, influences allies oneself with grid transistor life's technical problem.
In order to achieve the technical purpose, the utility model discloses a technical scheme provides an improved generation cell type allies oneself with grid transistor, including shell, allies oneself with grid transistor body, fin and radiator fan, the shell is inside hollow cylindrical casing, allies oneself with the grid transistor and establishes in the shell, is connected through an at least fin between shell inner wall and the allies oneself with grid transistor body, forms the wind channel between shell, allies oneself with grid transistor body and the fin, and radiator fan installs in shell one end, and the shell other end is equipped with the vent.
Furthermore, one side of the radiating fin is fixedly connected with the inner wall of the shell along the direction of the central axis of the shell, the outer wall of the gate-connected transistor body is provided with a radiating groove along the direction of the central axis, and the other side of the radiating fin is clamped in the radiating groove.
Further, the inner wall of the heat dissipation groove is provided with a heat conducting pad.
Further, the heat conducting pad is a silica gel pad.
Further, radiator fan includes mounting bracket, micro motor and flabellum, and the mounting bracket is installed in shell one end, and the micro motor is installed to one side that the mounting bracket is close to in the shell, installs the flabellum on micro motor's the output shaft.
Further, the mounting bracket includes the installation cover of taking the shaft shoulder and establishes the cross inside the installation cover, and the less one end of installation cover external diameter is established inside shell one end, and the great one end of installation cover external diameter passes through first bolted connection with shell one end, and micro motor installs the one side that the cross is close to in the shell.
Furthermore, the other end of the shell is connected with one end of the grid-connected transistor body through a second bolt.
Furthermore, the side wall of the shell is provided with a through hole, and two pins on the grid-connected transistor body respectively penetrate through the two through holes and extend to the outside of the shell.
The beneficial effects of the utility model include:
1. the heat that allies oneself with grid transistor body produced in the course of the work can transmit on the fin to in giving off the wind channel through the fin, can blow in the outside heat of shell into the wind channel through radiator fan and make the circulation of air in the wind channel, thereby can make the heat in the wind channel blow out in passing through the vent wind channel, can reduce the heat on allies oneself with grid transistor body surface fast, and then the life of extension allies oneself with grid transistor body.
2. The radiating grooves are formed in the outer wall of the gate-connected transistor body along the central axis direction, and the other sides of the radiating fins are clamped in the radiating grooves, so that the contact area between the radiating fins and the gate-connected transistor body can be increased, and the radiating efficiency of the gate-connected transistor body can be improved.
3. The heat conducting pad can improve the heat conducting effect between the grid-connected transistor body and the radiating fin, so that the heat radiating effect of the grid-connected transistor body can be improved.
Drawings
Fig. 1 is a schematic diagram of an improved trench-type gate-tied transistor according to an embodiment of the present invention;
fig. 2 is another state diagram of an improved trench-type gated transistor according to an embodiment of the present invention;
fig. 3 is a longitudinal sectional view of an improved trench cascode transistor in accordance with an embodiment of the present invention;
fig. 4 is a cross-sectional view of an improved trench-type gated transistor according to an embodiment of the present invention;
FIG. 5 is an enlarged view at A of FIG. 4;
fig. 6 is a schematic structural view of a cooling fan according to an embodiment of the present invention;
in the figure: 1. a housing; 11. a vent; 12. a through hole; 2. a gate-coupled transistor body; 21. a heat sink; 22. a pin; 3. a heat sink; 4. a heat radiation fan; 41. a mounting frame; 411. a mounting frame; 412. a cross; 413. a first bolt; 42. a micro motor; 43. a fan blade; 5. an air duct; 6. a thermally conductive pad; 7. a second bolt.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the invention.
As shown in fig. 1-6, the utility model provides an improved generation cell type allies oneself with bars transistor, including shell 1, allies oneself with bars transistor body 2, fin 3 and radiator fan 4, shell 1 is inside hollow cylindrical casing, allies oneself with bars transistor body 2 and establishes in shell 1, is connected through an at least fin 3 between shell 1 inner wall and the allies oneself with bars transistor body 2, and shell 1, allies oneself with and forms wind channel 5 between bars transistor body 2 and the fin 3, and radiator fan 4 installs in shell 1 one end, and the shell 1 other end is equipped with vent 11.
The heat that allies oneself with grid transistor body 2 produced in the course of the work can transmit on fin 3 to in giving off wind channel 5 through fin 3, can blow in the outside heat of shell 1 into wind channel 5 through radiator fan 4 and make the circulation of air in the wind channel 5, thereby can make the heat in the wind channel 5 blow out in passing through vent 11 wind channel 5, can reduce the heat on the surface of allies oneself with grid transistor body 2 fast, and then prolong the life of allies oneself with grid transistor body 2.
Preferably, one side of the heat sink 3 is fixedly connected with the inner wall of the housing 1 along the central axis direction of the housing 1, the outer wall of the gate transistor body 2 is provided with a heat sink 21 along the central axis direction thereof, and the other side of the heat sink 21 is clamped in the heat sink 21.
The heat dissipation groove 21 is formed in the outer wall of the cascade transistor body 2 along the central axis direction of the cascade transistor body, and the other side of the heat dissipation fin 3 is clamped in the heat dissipation groove 21, so that the contact area between the heat dissipation fin 3 and the cascade transistor body 2 can be increased, and the heat dissipation efficiency of the cascade transistor body 2 can be improved.
Preferably, the inner wall of the heat dissipation groove 21 is provided with a heat conduction pad 6. The thermal pad 6 can improve the thermal conduction effect between the gate transistor body 2 and the heat sink 3, thereby improving the heat dissipation effect of the gate transistor body 2.
In this embodiment, the heat conducting pad 6 is a silica gel pad.
For the thermal pad 6, it only needs to satisfy the requirement of improving the thermal conduction effect between the gate transistor body 2 and the heat sink 3, and therefore, it is not limited to the form of using the silica gel pad, for example, in other embodiments, the thermal pad is a thermal conduction member such as a graphene pad that can improve the thermal conduction effect between the gate transistor body 2 and the heat sink 3.
More specifically, the heat dissipation fan 4 includes a mounting bracket 41, a micro motor 42, and fan blades 43, the mounting bracket 41 is mounted at one end of the housing 1, the micro motor 42 is mounted at one side of the mounting bracket 41 close to the inside of the housing 1, and the fan blades 43 are mounted on an output shaft of the micro motor 42. The micro motor 42 can drive the fan blades 43 to rotate, so that the air outside the shell 1 is blown into the air duct 5.
More specifically, the mounting bracket 41 comprises a mounting sleeve 411 with a shaft shoulder and a cross 412 arranged inside the mounting sleeve 411, one end of the mounting sleeve 411 with a smaller outer diameter is arranged inside one end of the shell 1, one end of the mounting sleeve 411 with a larger outer diameter is connected with one end of the shell 1 through a first bolt 413, and the micro motor 42 is arranged on one side of the cross 412 close to the inside of the shell 1. This kind of mounting bracket 41, but stable installation is in 1 one end of shell, installs the great one end of installation cover 411 external diameter in 1 one end of shell through first bolt 413 simultaneously, can conveniently carry out the dismouting to mounting bracket 41 to can damage the back at micro motor 42, conveniently overhaul or change micro motor 42.
Preferably, the other end of the housing 1 is connected to one end of the gate-connected transistor body 2 by a second bolt 7. The other end of the shell 1 is connected with one end of the grid-connected transistor body 2 through the second bolt 7, so that the grid-connected transistor body 2 can be conveniently overhauled or replaced after the grid-connected transistor body 2 is damaged.
More specifically, the side wall of the housing 1 is provided with through holes 12, and two pins 22 on the gate-connected transistor body 2 respectively pass through the two through holes 12 and extend to the outside of the housing 1.
The specific principle is as follows: during installation, the cascade transistor body 2 extends into the shell 1 towards one end of the shell 1, the radiating fins 3 are clamped into the radiating grooves 21 of the cascade transistor body 2, the cascade transistor body 2 extends out of the shell 1 through the through holes 12, then the cascade transistor body 2 is fixed in the shell 1 through the second bolts 7, after the fixation is finished, one end of the mounting sleeve 411 with the smaller diameter is inserted into one end of the shell 1, one end of the mounting sleeve 411 with the larger diameter is mounted at one end of the shell 1 through the first bolts 413, namely the radiating fan 4 is mounted at one end of the shell 1, during radiating, heat generated in the working process of the cascade transistor body 2 can be transferred to the radiating fins 3 and is dissipated into the air channel 5 through the radiating fins 3, heat outside the shell 1 can be blown into the air channel 5 through the radiating fan 4 to circulate air in the air channel 5, so that the heat in the air channel 5 can be blown out through the ventilation openings 11, the heat on the surface of the cascade transistor body 2 can be quickly reduced, and the service life of the cascade transistor body 2 is further prolonged.
The beneficial effects of the utility model include: the heat generated by the cascade transistor body 2 in the working process can be transferred to the radiating fins 3 and is radiated into the air channel 4 through the radiating fins 3, the heat outside the shell 1 can be blown into the air channel 5 through the radiating fan 4 to enable the air in the air channel 5 to circulate, so that the heat in the air channel 5 can be blown out of the air channel 5 through the ventilation opening 11, the heat on the surface of the cascade transistor body 2 can be quickly reduced, and the service life of the cascade transistor body 2 is prolonged; the heat dissipation groove 21 is formed in the outer wall of the gate transistor body 2 along the central axis direction of the gate transistor body, and the other side of the heat dissipation fin 3 is clamped in the heat dissipation groove 21, so that the contact area between the heat dissipation fin 3 and the gate transistor body 2 can be increased, and the heat dissipation efficiency of the gate transistor body 2 can be improved; the thermal pad 6 can improve the thermal conductivity between the gate transistor body 2 and the heat sink 3, thereby improving the heat dissipation effect of the gate transistor body 2.
The above description of the present invention does not limit the scope of the present invention. Any other corresponding changes and modifications according to the technical idea of the present invention should be included in the scope of the claims of the present invention.

Claims (8)

1. The utility model provides an improved generation cell type allies oneself with grid transistor, its characterized in that, includes shell, allies oneself with grid transistor body, fin and radiator fan, the shell is inside hollow cylindrical casing, allies oneself with the grid transistor and establishes in the shell, be connected through an at least fin between shell inner wall and the allies oneself with the grid transistor body, form the wind channel between shell, allies oneself with grid transistor body and the fin, radiator fan installs in shell one end, the shell other end is equipped with the vent.
2. The improved grooved cascade transistor as claimed in claim 1, wherein one side of the heat sink is fixedly connected to the inner wall of the housing along the central axis direction of the housing, the outer wall of the cascade transistor body is provided with a heat sink along the central axis direction, and the other side of the heat sink is engaged in the heat sink.
3. The improved trench gated transistor of claim 2 wherein the inner walls of the heat sink have thermal pads.
4. The improved trench gate-tied transistor as in claim 3, wherein said thermal pad is a silicone pad.
5. The improved grooved cascade transistor as claimed in claim 1, wherein the heat dissipation fan comprises a mounting frame, a micro motor and fan blades, the mounting frame is mounted at one end of the housing, the micro motor is mounted on one side of the mounting frame close to the inside of the housing, and the fan blades are mounted on an output shaft of the micro motor.
6. The improved grooved cascade transistor according to claim 5, wherein the mounting bracket comprises a mounting sleeve with a shoulder and a cross inside the mounting sleeve, the end of the mounting sleeve with a smaller outer diameter is arranged inside one end of the housing, the end of the mounting sleeve with a larger outer diameter is connected with one end of the housing through a first bolt, and the micro motor is arranged on one side of the cross close to the inside of the housing.
7. The improved trench type gated transistor of claim 1 wherein the other end of the housing is connected to one end of the body of the gated transistor by a second bolt.
8. The improved trench type gated transistor of claim 1 wherein the sidewalls of the casing have through holes, and wherein two of the pins of the body of the gated transistor extend through the two through holes and out of the casing.
CN202222654978.2U 2022-09-30 2022-09-30 Improved groove type grid-connected transistor Active CN218447885U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202222654978.2U CN218447885U (en) 2022-09-30 2022-09-30 Improved groove type grid-connected transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202222654978.2U CN218447885U (en) 2022-09-30 2022-09-30 Improved groove type grid-connected transistor

Publications (1)

Publication Number Publication Date
CN218447885U true CN218447885U (en) 2023-02-03

Family

ID=85085138

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202222654978.2U Active CN218447885U (en) 2022-09-30 2022-09-30 Improved groove type grid-connected transistor

Country Status (1)

Country Link
CN (1) CN218447885U (en)

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