CN218447803U

CN218447803U - Stepping dry etching equipment

Info

Publication number: CN218447803U
Application number: CN202222935143.4U
Authority: CN
Inventors: 朱小云
Original assignee: Hangzhou Huazu Technology Co ltd
Current assignee: Hangzhou Huazu Technology Co ltd
Priority date: 2022-11-04
Filing date: 2022-11-04
Publication date: 2023-02-03
Anticipated expiration: 2032-11-04

Abstract

The utility model relates to a dry etching technical field, specifically speaking relates to a marching type dry etching equipment, including the sculpture cavity, the sculpture cavity includes reacting chamber and wafer slide glass room, is equipped with the sculpture window between reacting chamber and the wafer slide glass room, and the top of reacting chamber is equipped with the electrode, is equipped with the wafer plummer in the wafer slide glass room, and the wafer plummer is used for bearing the weight of the wafer, and wafer plummer below is equipped with automatic displacement platform, the utility model discloses under pulse voltage's effect, the plasma that produces in the reacting chamber is vertical high-speed motion between upper electrode and lower electrode to the wafer local position that the bombardment is located the sculpture window below, is restricted by the sculpture window, and the sculpture only takes place in the region that the window is just right; the problem that the etched graph is distorted easily because the motion trail cannot guarantee the vertical downward direction in the process that partial ions are attracted to move by the electrode due to the fact that the size of the lower electrode is greatly increased is solved.

Description

Stepping dry etching equipment

Technical Field

The utility model relates to a dry etching technical field, specifically speaking relates to a marching type dry etching equipment.

Background

Etching is a key step of pattern transfer in the process of semiconductor production and processing technology, and dry etching is used as an anisotropic etching method, has good pattern fidelity and is widely applied to the field of semiconductor etching. The principle of dry etching is that etching gas collides with free electrons under a high electric field to ionize to form anions and cations, the generated anions and cations move at high speed in the vertical direction under the action of an electric field with certain frequency to bombard the surface of a wafer, and atoms on the surface of the wafer fall off along with the etching ions and are further pumped out of a cavity by a vacuum pump. However, with the reduction of the processing size and the continuous increase of the wafer area, the size of the cavity of the dry etching equipment is larger and larger, the increase of the size of the cavity causes that the uniformity of the etching gas atmosphere in the cavity cannot be ensured, and the uniformity of etching is gradually worsened. Meanwhile, in the etching process, ions are attracted by the high potential of the lower electrode to bombard the surface of the wafer, the size of the lower electrode is increased along with the increase of the size of the cavity or the wafer, and the movement track cannot guarantee the vertical downward direction of part of ions in the process of attracting the ions by the electrode due to the large increase of the size of the electrode, so that the problem of distortion of an etched pattern is easily caused.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a marching type dry etching equipment to the increase by a wide margin that proposes down electrode size in solving above-mentioned background art leads to partial ion at the in-process by electrode attraction motion, and vertical decurrent direction can't be guaranteed to the movement track, leads to the sculpture figure to appear the problem of distortion easily.

In order to achieve the above object, the utility model provides a following technical scheme:

the utility model provides a marching type dry etching equipment, including the sculpture cavity, the sculpture cavity includes reaction chamber and wafer slide glass room, be equipped with the sculpture window between reaction chamber and the wafer slide glass room, the top of reaction chamber is equipped with the electrode, be equipped with the wafer plummer in the wafer slide glass room, the wafer plummer is used for bearing the wafer, wafer plummer below is equipped with automatic displacement platform, the wafer plummer is connected with automatic displacement platform, it removes to drive the wafer plummer by automatic displacement platform, wafer plummer below is equipped with the bottom electrode, still including the first actuating mechanism that drives automatic displacement platform and remove and the second actuating mechanism that drives automatic displacement platform back-and-forth movement.

Preferably, the length and width of the etching window are smaller than the diameter of the wafer.

Preferably, the cross section of the reaction chamber is circular or square.

Preferably, the cross section of the lower electrode is the same as that of the reaction chamber, and the lower electrode is positioned right below the reaction chamber.

Preferably, the first driving mechanism comprises a base, a first guide rail, a first screw rod, a first motor and a first moving seat, the base is fixedly connected to the bottom of the inner wall of the wafer slide chamber, the first guide rail is fixed to the base, the first moving seat is slidably arranged on the first guide rail, the first screw rod is rotatably arranged on the base, the first moving seat is in threaded connection with the first screw rod, and the first motor drives the first screw rod to rotate.

Preferably, the second driving mechanism comprises a second guide rail, a second screw rod, a second motor and a second moving seat, the second guide rail is perpendicular to the first guide rail, the second guide rail is fixed to the top of the first moving seat, the second moving seat is slidably arranged on the second guide rail, the second screw rod is rotatably arranged on the first moving seat, the second moving seat is in threaded connection with the second screw rod, the second motor drives the second screw rod to rotate, and the automatic displacement table is arranged on the second moving seat.

Compared with the prior art, the beneficial effects of the utility model are that:

according to the stepping dry etching equipment, the size of the reaction chamber can be designed according to the size of the etching window, and does not need to be matched with the size of a wafer, so that the volume of the reaction chamber is reduced; the size of the etching window of the reaction chamber can be changed into the sizes of the etching windows with different sizes according to requirements, and the size of the etching window is smaller than the size of the cross interface of the reaction chamber; the volume of the reaction chamber is reduced, so that the gas in the cavity can be uniformly controlled, and the density of the plasma can be correspondingly improved, thereby improving the etching rate; under the action of pulse voltage, plasma generated in the reaction chamber moves vertically and at high speed between the upper electrode and the lower electrode, bombards the local position of a wafer positioned below an etching window, and is limited by the etching window, so that etching only occurs in the area opposite to the window; the problem that the etched graph is distorted easily because the motion trail cannot guarantee the vertical downward direction in the process that partial ions are attracted to move by the electrode due to the fact that the size of the lower electrode is greatly increased is solved.

Drawings

Fig. 1 is a schematic view of the overall structure of the present invention.

Fig. 2 is a top view of a plane where a wafer according to the present invention is located.

Fig. 3 is a schematic structural diagram of the first driving mechanism and the second driving mechanism of the present invention.

The meaning of the reference symbols in the figures is:

FIG. 1: 1-etching cavity, 2-upper electrode, 3-lower electrode, 4-wafer bearing table, 5-automatic displacement table, 6-wafer, 101-reaction chamber, 102-wafer slide chamber, 103-etching window;

FIG. 2;

fig. 3-70-base, 700-first guide rail, 701-first screw, 702-first motor, 71-first movable base, 710-second guide rail, 711-second screw, 712-second motor, 72-second movable base.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts all belong to the protection scope of the present invention.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and to simplify the description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present invention.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.

The utility model provides a technical scheme:

referring to fig. 1-3, a step dry etching apparatus includes an etching chamber 1, the etching chamber 1 includes two parts, namely a reaction chamber 101 and a wafer carrier chamber 102, the upper part of the etching chamber is the reaction chamber 101, the lower part is the wafer carrier chamber 102, and an etching window 103 is disposed between the reaction chamber 101 and the wafer carrier chamber 102.

The top of the reaction chamber 101 is fixedly connected with an upper electrode 2, a wafer bearing table 4 is arranged in the wafer slide chamber 102, the wafer bearing table 4 is used for bearing a wafer 6, an automatic displacement table 5 is arranged below the wafer bearing table 4, the wafer bearing table 4 is connected with the automatic displacement table 5, concretely, four corners of the bottom of the wafer bearing table 4 are fixedly connected with supporting columns, the bottom ends of the supporting columns are fixedly connected with the top of the automatic displacement table 5, a space is arranged between the wafer bearing table 4 and the automatic displacement table 5, a lower electrode 3 is arranged below the wafer bearing table 4, the lower electrode 3 is positioned between the wafer bearing table 4 and the automatic displacement table 5, and the lower electrode 3 is fixedly connected with the inner wall of the wafer slide chamber 102; the cross section of the lower electrode 3 is the same as that of the reaction chamber 101, and the lower electrode 3 is located right below the reaction chamber 101.

In a specific implementation, the etching gas is introduced into the reaction chamber 101 to form a plasma in the reaction chamber 101, and the plasma is generated by one or more types including but not limited to inductive coupling, capacitive coupling, magnetic control reactive ion coupling, and the like.

Further, the length and the width of the etching window 103 are both smaller than the diameter of the wafer 6, a part of the position of the lower electrode 3 is always corresponding to the etching window 103 in the etching process, the whole lower electrode 3 is not completely exposed under the etching window 103, pulse voltage with certain frequency is applied on the lower electrode 3, under the action of the pulse voltage, plasma generated in the reaction chamber 101 moves vertically and at high speed between the upper electrode and the lower electrode and bombards the local position of the wafer positioned below the etching window 103, and the etching only occurs in the area opposite to the window under the limitation of the etching window 103; the problem that the etched graph is distorted easily because the motion trail cannot guarantee the vertical downward direction in the process that part of ions are attracted by the electrodes to move due to the fact that the size of the lower electrode 3 is greatly increased is solved.

When the automatic shift stage moves, the automatic shift stage drives the wafer stage 4 to move.

The reaction chamber 101 has a circular or square cross-section, and the present embodiment is preferably square.

Further, after the etching of the field 601 being etched by the etching window shown in fig. 2 is completed, the automatic displacement table 5 moves other to-be-etched areas 602 of the wafer to the lower part of the etching window for etching by using the size of the etching window as left and right or moving back and forth, so as to complete the etching of the whole wafer by field etching.

Because the etched reaction chamber has small volume, only the local part of the wafer is etched, and higher etching uniformity can be obtained. Meanwhile, the area of single etching is small, and the etching efficiency is high. For the etched wafer, because the etching is finished under the etching window, the etching difference of different positions of the wafer does not exist. The yield of the product can be greatly improved.

The automatic displacement table device further comprises a first driving mechanism for driving the automatic displacement table 5 to move left and right and a second driving mechanism for driving the automatic displacement table 5 to move front and back.

The first driving mechanism comprises a base 70, a first guide rail 700, a first lead screw 701, a first motor 702 and a first moving seat 71, the base 70 is fixedly connected to the bottom of the inner wall of the wafer slide chamber 102, the first guide rail 700 is fixedly connected to the top of the base 70, the first guide rail 700 is arranged along the length direction of the base 70, the first moving seat 71 is slidably arranged on the first guide rail 700, the first lead screw 701 is rotatably arranged on the base 70, the first moving seat 71 is in threaded connection with the first lead screw 701, the first motor 702 drives the first lead screw 701 to rotate, and the first lead screw 701 and the first guide rail 700 are arranged in parallel.

The second driving mechanism comprises a second guide rail 710, a second screw 711, a second motor 712 and a second moving seat 72, the second guide rail 710 is perpendicular to the first guide rail 700, the second guide rail 710 is fixedly connected to the top of the first moving seat 71, the second moving seat 72 is slidably arranged on the second guide rail 710, the second screw 711 is rotatably arranged on the first moving seat 71, the second moving seat 72 is in threaded connection with the second screw 711, the second motor 712 drives the second screw 711 to rotate, the automatic displacement table 5 is arranged on the second moving seat 72, and the second screw 711 is parallel to the second guide rail 710.

Starting a first motor 702 to work, and driving a first screw rod 701 to rotate, so as to drive a first moving seat 71 to move left and right, namely, to drive a second moving seat 72 and an automatic displacement table 5 to move left and right, and further to drive a wafer bearing table 4 and a wafer to move left and right to etch the wafer; when the second motor 712 is activated to operate, the second screw 711 is driven to rotate, so as to drive the second moving base 72 to move back and forth, and then the automatic moving table 5 is driven to move back and forth, and further the wafer bearing table 4 and the wafer are driven to move back and forth to etch the wafer.

In the technical scheme, the size of the reaction chamber can be designed according to the size of the etching window, and does not need to be matched with the size of a wafer, so that the volume of the reaction chamber is reduced. The size of the etching window of the reaction chamber can be changed into the sizes of the etching windows with different sizes according to requirements, and the size of the window is smaller than the transverse size of the reaction chamber. The volume of the reaction chamber is reduced, so that the gas in the cavity can be uniformly controlled, and the density of the plasma can be correspondingly improved, thereby improving the etching rate.

The foregoing shows and describes the general principles, essential features, and advantages of the invention. It should be understood by those skilled in the art that the present invention is not limited by the above embodiments, and the description in the above embodiments and the description is only preferred examples of the present invention, and is not intended to limit the present invention, and that the present invention can have various changes and modifications without departing from the spirit and scope of the present invention, and these changes and modifications all fall into the scope of the claimed invention. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims

1. The utility model provides a marching type dry etching equipment, includes etching cavity (1), its characterized in that: the etching cavity (1) comprises a reaction chamber (101) and a wafer slide chamber (102), an etching window (103) is arranged between the reaction chamber (101) and the wafer slide chamber (102), an upper electrode (2) is arranged above the reaction chamber (101), a wafer bearing table (4) is arranged in the wafer slide chamber (102), the wafer bearing table (4) is used for bearing a wafer (6), an automatic displacement table (5) is arranged below the wafer bearing table (4), the wafer bearing table (4) is connected with the automatic displacement table (5), the wafer bearing table (4) is driven by the automatic displacement table to move, a lower electrode (3) is arranged below the wafer bearing table (4), and the etching cavity further comprises a first driving mechanism for driving the automatic displacement table (5) to move left and right and a second driving mechanism for driving the automatic displacement table (5) to move back and forth.

2. The step dry etching apparatus according to claim 1, wherein: the length and width of the etching window (103) are both smaller than the diameter of the wafer (6).

3. The step-by-step dry etching apparatus according to claim 1, wherein: the cross section of the reaction chamber (101) is round or square.

4. The step dry etching apparatus according to claim 1, wherein: the cross section of the lower electrode (3) is the same as that of the reaction chamber (101), and the lower electrode (3) is positioned right below the reaction chamber (101).

5. The step-by-step dry etching apparatus according to claim 1, wherein: the first driving mechanism comprises a base (70), a first guide rail (700), a first screw rod (701), a first motor (702) and a first moving seat (71), the base (70) is fixedly connected to the bottom of the inner wall of the wafer slide chamber (102), the first guide rail (700) is fixed on the base (70), the first moving seat (71) is arranged on the first guide rail (700) in a sliding mode, the first screw rod (701) is rotatably installed on the base (70), the first moving seat (71) is connected to the first screw rod (701) in a threaded mode, and the first motor (702) drives the first screw rod (701) to rotate.

6. The step dry etching apparatus according to claim 5, wherein: the second driving mechanism comprises a second guide rail (710), a second screw rod (711), a second motor (712) and a second moving seat (72), the second guide rail (710) is perpendicular to the first guide rail (700), the second guide rail (710) is fixed to the top of the first moving seat (71), the second moving seat (72) is arranged on the second guide rail (710) in a sliding mode, the second screw rod (711) is rotatably installed on the first moving seat (71), the second moving seat (72) is connected to the second screw rod (711) in a threaded mode, the second motor (712) drives the second screw rod (711) to rotate, and the automatic displacement table (5) is installed on the second moving seat (72).