CN218435942U - Gas supply system and substrate processing apparatus thereof - Google Patents
Gas supply system and substrate processing apparatus thereof Download PDFInfo
- Publication number
- CN218435942U CN218435942U CN202222860276.XU CN202222860276U CN218435942U CN 218435942 U CN218435942 U CN 218435942U CN 202222860276 U CN202222860276 U CN 202222860276U CN 218435942 U CN218435942 U CN 218435942U
- Authority
- CN
- China
- Prior art keywords
- gas
- supply system
- substrate processing
- processing apparatus
- pipeline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The utility model discloses a gas supply system and substrate processing apparatus thereof, gas supply system contains foaming cavity, admission line, pipeline and shunt of giving vent to anger, and the foaming cavity is used for storing liquid predecessor, and the gaseous carrier gas that liquid predecessor vaporization generated forms mist with the leading-in carrier gas of admission line, and the pipeline of giving vent to anger carries corresponding processing chamber with mist and handles the substrate. The utility model discloses a shunt falls into leading-in liquid predecessor behind a plurality of branch carrier gas with the carrier gas in the admission line to make the gas outlet of giving vent to anger port of branch carrier gas keep away from the gas outlet of foaming cavity, solve the problem that the gas outlet of foaming cavity that above-mentioned liquid drop splashes and arouses blockked up. The utility model provides a gas supply system can steadily, high-efficiently supply gas to its substrate processing apparatus, guarantee substrate processing apparatus's substrate processing rate and quality.
Description
Technical Field
The utility model belongs to the semiconductor device field, concretely relates to gas supply system and substrate processing apparatus thereof.
Background
In semiconductor manufacturing processes, substrates are generally processed using reactant gases, such as Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD), to form thin films on the surfaces of the substrates. Chemicals are often supplied in liquid or solid form in industry, and therefore, prior to processing a substrate using a reactive gas, it is often necessary to convert the liquid or solid chemical into a chemical vapor to form the reactive gas for processing the substrate.
A bubbling vaporizer is widely used in a semiconductor manufacturing apparatus for supplying a reaction gas to a substrate; an inert carrier gas is introduced into a liquid chemical (i.e., a liquid precursor) contained in a bubbler to promote vaporization of the liquid chemical, bubbles of the carrier gas float in the liquid chemical across a surface of the liquid chemical, vapor generated by vaporization of the liquid chemical in the bubbler forms a mixed gas with the carrier gas, and the mixed gas exits the bubbler and is supplied to a processing chamber for processing a substrate.
For liquid chemicals, especially some high-viscosity liquid chemicals, bubbles formed by gas are easy to burst in the process of moving from the bottom of the liquid to the liquid surface, so that liquid drops are splashed around, even splashed to a gas outlet of a foaming container to form a particle source, and the gas outlet is blocked. In order to avoid the clogging of the gas outlet, various splash guards have been tried to be provided above the liquid surface of the bubbling container to physically prevent the liquid droplets from reaching the gas outlet, but the splash guards themselves may adsorb the liquid droplets to form a particle source, and clog the gas passage, resulting in unsatisfactory effects.
SUMMERY OF THE UTILITY MODEL
The utility model provides a gas supply system and substrate processing apparatus thereof, the carrier gas through the shunt in with the admission line falls into leading-in liquid predecessor behind a plurality of branch carrier gases to make the branch carrier gas give vent to anger the end and keep away from the gas outlet of foaming cavity, solve the problem that the gas outlet that above-mentioned liquid drop splashes and arouses blockked up.
The utility model provides a pair of a gas supply system for substrate processing apparatus, include:
a bubbling chamber containing a liquid precursor, the bubbling chamber including an inlet port and an outlet port;
a gas inlet tube including opposing first and second ends, wherein the first end is connected to a carrier gas source, the second end of the gas inlet tube is positioned below a liquid level of a liquid precursor, and the gas inlet tube is configured to deliver a carrier gas into the liquid precursor through the gas inlet port;
the flow divider is arranged at the second end of the gas inlet pipeline, a plurality of gas channels distributed in a scattering manner are arranged in the flow divider, each gas channel is communicated with the gas inlet pipeline, the flow divider divides the carrier gas in the gas inlet pipeline into a plurality of branch carrier gases and then introduces the branch carrier gases into the liquid precursor for bubbling, and the introduced carrier gases and the steam generated by vaporization of the precursor form mixed gas; the flow divider comprises a first area and a second area, a first distance is reserved between the gas outlet end of the gas channel in the first area and the gas outlet port of the foaming chamber, a second distance is reserved between the gas outlet end of the gas channel in the second area and the gas outlet port of the foaming chamber, the second distance is larger than the first distance, and the number of the gas channels arranged on the first area of the flow divider is smaller than that of the gas channels arranged on the second area of the flow divider;
an outlet conduit that delivers the mixed gas into a processing chamber through an outlet port of the bubbling chamber, the mixed gas being used to process a surface of a substrate.
Optionally, the inlet duct has a first outlet area; the gas channel has a second outlet area;
the second outlet area is less than the first outlet area.
Optionally, the carrier gas flow rate of the gas inlet pipe is equal to the sum of the carrier gas flow rates of the plurality of gas channels.
Optionally, the direction of the carrier gas flowing out of the gas channel is parallel to the horizontal plane; alternatively, the first and second electrodes may be,
the direction of the carrier gas flowing out of the gas channel is inclined downwards and is directed to the bottom of the foaming chamber; alternatively, the first and second liquid crystal display panels may be,
the direction of the carrier gas flowing out of the gas channel is inclined upwards and points to the liquid surface of the liquid precursor.
Optionally, the gas passages of the flow splitter are provided only in the second zone.
Optionally, a projection of the gas outlet port on a horizontal plane does not overlap a horizontal projection of the gas channel.
Optionally, the gas supply system further comprises a heater;
the heater is arranged around the periphery of the bubbling chamber and used for heating the liquid precursor in the bubbling chamber to volatilize the liquid precursor into a gaseous precursor, and the gaseous precursor and the carrier gas form the mixed gas.
Optionally, the gas inlet pipeline is further provided with a first control valve for controlling the transportation of the carrier gas in the gas inlet pipeline.
Optionally, the outlet pipe comprises a third end and a fourth end opposite to each other;
the third end is connected with the gas outlet port of the foaming cavity in a matching way, and the third end is positioned above the liquid level of the liquid precursor;
the fourth end is positioned outside the bubbling chamber and connected with the processing chamber and used for conveying the mixed gas into the processing chamber;
and the gas outlet pipeline is provided with a second control valve for controlling the transportation of gas in the gas outlet pipeline.
Optionally, the gas supply system further comprises a connecting pipe;
one end of the connecting pipeline is connected with the air inlet pipeline at the downstream of the first control valve, and the other end of the connecting pipeline is connected with the air outlet pipeline at the upstream of the second control valve;
the connecting pipeline is communicated with the gas inlet pipeline and the gas outlet pipeline and introduces carrier gas into the gas outlet pipeline.
Optionally, a third control valve is arranged on the connecting pipeline and used for controlling the delivery of the carrier gas in the connecting pipeline;
a fourth control valve is also arranged on the air inlet pipeline; the fourth control valve is positioned between the connection part of the gas inlet pipeline and the connecting pipeline and the gas inlet port and is used for controlling the delivery of the carrier gas to the foaming chamber;
a fifth control valve is also arranged on the air outlet pipeline; and the fifth control valve is positioned between the joint of the gas outlet pipeline and the connecting pipeline and the gas outlet port and is used for controlling the delivery of the carrier gas to the foaming chamber.
Optionally, the precursor comprises a hydrocarbon or metal-containing hydrocarbon or halogen compound.
Optionally, the carrier gas comprises one or more of argon, nitrogen and helium.
Another technical scheme of the utility model provides a substrate processing apparatus, include:
a processing chamber having a susceptor therein for carrying a substrate;
the gas supply system described above is used to provide a mixed gas into the process chamber, the mixed gas containing a gaseous precursor for treating a surface of a substrate.
Optionally, the substrate processing apparatus is used for a chemical vapor deposition apparatus or an atomic layer deposition apparatus.
Compared with the prior art, the technical scheme of the utility model following beneficial effect has at least:
in the gas supply system provided by the utility model, the flow divider with a plurality of gas channels is arranged at the port of the gas inlet pipeline, the carrier gas in the gas inlet pipeline is divided into a plurality of branch carrier gases to be led into the liquid precursor, thereby increasing the quantity of bubbles formed by the gas flow in the liquid precursor, enabling the bubbles to be generated uniformly and reducing the size of the bubbles, and further avoiding the generation of large bubbles and the long-distance liquid splashing caused by the burst of the large bubbles; and, gas channel's among the shunt end of giving vent to anger sets up in the region of keeping away from foaming chamber gas outlet for liquid drop is deviating from or even is deviating from the direction at foaming chamber gas outlet place and is splashed, can further prevent like this that the liquid drop from splashing and fall at foaming chamber gas outlet, effectively avoids gas outlet's jam. The utility model provides a gas supply system has solved the problem that the gas outlet of foaming cavity blockked up, can steadily, high-efficiently supply gas to its substrate processing apparatus, guarantee substrate processing apparatus's substrate processing rate and quality.
Drawings
FIG. 1 is a schematic view of a gas supply system according to the present invention;
FIGS. 2-4 are enlarged schematic views of the flow splitter in a liquid precursor;
FIGS. 5 and 6 are schematic views of the diverter and the bubbling chamber outlet port projected in a horizontal plane;
fig. 7 is a schematic view of a substrate processing apparatus according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
It should be noted that, in this document, the terms "comprises," "comprising," "includes," "including," "has" or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrases "comprising … …" or "comprising … …" does not exclude the presence of additional elements in a process, method, article, or terminal that comprises the element.
It should be noted that the drawings are in a very simplified form and employ non-precise ratios for the purpose of facilitating and distinctly facilitating the description of one embodiment of the invention.
Fig. 1 is a schematic view of a gas supply system for a substrate processing apparatus according to the present invention.
The utility model provides a gas supply system 10 turns into the vapour state with liquid predecessor and carries out the in-process that technology was handled in order to form reaction gas supply substrate, can avoid liquid predecessor's liquid drop to splash to the gas outlet department of foaming cavity, block up gas outlet, ensure that reaction gas steadily, supply with high-efficiently.
As shown in fig. 1, the gas supply system 10 includes a bubbling chamber 100, an inlet duct 200, a flow divider 300, an outlet duct 400, and the like.
The bubbling chamber 100 is a closed container for holding a precursor 110 in a liquid state. An air inlet port 120 and an air outlet port 130 are formed on the bubbling chamber 100; in the embodiment of the present invention, the inlet port 120 and the outlet port 130 are disposed at the top of the bubbling chamber 100, the inlet port 120 is used to connect the inlet pipe 200, and the outlet port 130 is used to connect the outlet pipe 400. A common liquid precursor comprises titanium tetrachloride (TiCl) 4 ) Tetraethoxysilane, silicon tetrachloride (SiCl) 4 ) And the like, or metal-containing hydrocarbons of diethyl zinc, dimethyl zinc, trimethyl aluminum, and combinations thereof, or other sources of liquid, such as chlorides or other halogen compounds. It should be noted that the liquid precursor of the present invention includes but is not limited to the above chemicals, and can be selected according to the actual application.
The gas inlet conduit 200 is used to deliver a carrier gas to the bubbling chamber 100 that promotes vaporization of the precursor 110 in liquid form; common carrier gases include inert gases such as argon, nitrogen, helium, and combinations thereof. The gas inlet pipe 200 has opposite first and second ends, the first end of the gas inlet pipe is outside the bubbling chamber and is used for connecting a carrier gas source; the second end enters the interior of the bubbling chamber through gas inlet port 120 and extends below the level 140 of the precursor for introducing the carrier gas into the liquid precursor. A first control valve 210 is arranged on the gas inlet pipeline 200, and the first control valve 210 is used for controlling the delivery of carrier gas in the gas inlet pipeline; when the first control valve 210 is opened, the carrier gas provided by the carrier gas source is delivered to the liquid precursor 110 through the inlet pipe 200; when the first control valve 210 is closed, the inlet conduit 200 is interrupted and the carrier gas provided by the carrier gas source can no longer be delivered through the inlet conduit 200. In order to save the carrier gas and avoid waste, in the embodiment of the present invention, the first control valve 210 is disposed near the first end.
The flow divider 300 is disposed at the second end of the intake duct 200, and has a plurality of gas channels 310 distributed in a scattering manner (as shown in fig. 5), and each gas channel 310 is communicated with the intake duct 200. The gas outlet area of the gas inlet pipe 200 is taken as the first outlet area, the gas outlet area of each gas channel 310 is taken as the second outlet area, and the second outlet area is smaller than the first outlet area, in other words, the gas channels 310 are relatively fine compared with the gas inlet pipe 200, the gas channels 310 divide the relatively large carrier gas flow in the gas inlet pipe 200 into a plurality of fine branch carrier gas flows and then introduce the fine branch carrier gas flows into the liquid precursor 110, compared with the carrier gas flow in the gas inlet pipe 200, the fine branch carrier gas flows uniformly generate bubbles in the liquid precursor 110, and the generated bubbles are more and smaller, thereby reducing the generation of large bubbles and the long-distance liquid droplet splashing caused by the burst of the large bubbles, and effectively controlling the generation of the gas outlet blocking phenomenon of the bubbling chamber caused by the liquid droplet splashing. It should be noted here that the sum of the carrier gas flow rates of the plurality of gas channels 310 is equal to the carrier gas flow rate of the gas inlet duct 200.
The flow of carrier gas will flow into the liquid precursor 110 along the direction of the gas channel 310. The present invention adjusts the direction of carrier gas flowing out of the gas channel 310 by arranging the gas channel 310, at least the gas outlet end portion of the gas channel 310, in different directions in the liquid precursor, as shown in fig. 2 to 4. In one embodiment of the present invention, the gas channel 310a is horizontally disposed in the liquid precursor 110, so that the carrier gas flows out in a horizontal direction, as shown in fig. 2. In another embodiment of the present invention, the gas channel 310b is disposed in an inclined downward direction in the liquid precursor 110 such that the carrier gas flows out in an inclined downward direction toward the bottom of the bubbling chamber 100, as shown in FIG. 3. In yet another embodiment of the present invention, the gas channel 310c is disposed in the liquid precursor 110 in an inclined upward direction, so that the carrier gas flows out in the inclined upward direction and is directed to the liquid surface 140 of the liquid precursor, as shown in fig. 4. To avoid splashing of the liquid, the carrier gas is preferably discharged in an obliquely downward or horizontal direction.
The different regions of the flow diverter are shown in different relative positional relationships to the bubbling chamber outlet port 130, with some regions being relatively far from the bubbling chamber outlet port 130 and some regions being relatively close to the bubbling chamber outlet port 130; the relative position relationship between the gas channel 310 and the gas outlet port 130 in different areas of the substrate naturally differs. The utility model discloses a set up gas channel 310 in the different regions of shunt 300, perhaps set up the gas channel 310 of different quantity in the different regions of shunt 300, adjust gas channel 310 and the distance relation of the port 130 of giving vent to anger to and the direction of the carrier gas that gas channel 310 flows, further prevent that predecessor liquid from spattering and falling on the port 130 of giving vent to anger of foaming cavity.
Fig. 5 and 6 are schematic projection views of the flow divider 300 and the bubbling chamber gas outlet port 130 on a horizontal plane, in which a horizontal projection of the bubbling chamber gas outlet port 130 is not coincident with a horizontal projection of the gas channel 310. In a horizontal plane where the gas channel 310 is located, the distance from the position of the projection of the gas outlet port 130 on the horizontal plane to the gas outlet port 130 is the smallest, and the distances from other positions of the horizontal plane to the gas outlet port 130 are all greater than the distance from the projection of the gas outlet port 130, if the gas channel 310 is located at the position of the projection of the gas outlet port 130, or the gas channel 310 is located right below the gas outlet port 130, the distance from the gas channel 310 to the gas outlet port 130 is the smallest, but in order to prevent liquid droplets from splashing on the gas outlet port 130, a larger distance needs to be kept between the gas channel 310 and the gas outlet port 130, so the gas channel 310 is not located right below the gas outlet port 130, and the horizontal projection of the gas outlet port 130 does not coincide with the horizontal projection of the gas channel 310.
The flow splitter 300 may be divided into a first region 300a and a second region 300b according to the relative position relationship with the gas outlet port 130 of the bubbling chamber, wherein the first region 300a is a region of the flow splitter relatively close to the gas outlet port 130, and the second region 300b is a region of the flow splitter relatively far from the gas outlet port 130. Referring to fig. 5 and 6 in a matching manner, a gas channel 310 formed on the first area 300a is close to the gas outlet port 130, a gas channel 310 formed on the second area 300b is relatively far away from the gas outlet port 130, a distance from the gas outlet end of the gas channel 310 on the first area 300a to the gas outlet port 130 of the bubbling chamber is a first distance, a distance from the gas outlet end of the gas channel 310 on the second area 300b to the gas outlet port 130 of the bubbling chamber is a second distance, and the second distance is greater than the first distance; moreover, the carrier gas flowing out of the gas channel 310 in the first region 300a approaches the direction of the gas outlet port 130, and the correspondingly generated droplets will splash in the direction approaching the gas outlet port 130; the carrier gas flowing out of the gas channel 310 on the second area 300b deviates from the direction of the gas outlet port 130, and the correspondingly generated droplets are splashed in the direction deviating from the direction of the gas outlet port 130. As can be seen from the above, the gas channels 310 formed in the second region 300b are not prone to the precursor liquid splashing on the gas outlet port 130 of the bubbling chamber, as compared to the gas channels 310 formed in the first region 300 a.
In the present invention, the number of the gas passages 310 provided in the first area 300a is less than the number of the gas passages 310 provided in the second area 300b, or the number of the gas passages 310 provided in the first area 300a is less, as shown in fig. 5; even the first zone 300a is not provided with gas channels 310 and only the second zone 300b, as shown in fig. 6.
The carrier gas in the inlet pipe 200 is introduced into the liquid precursor 110 through the gas channel 310, bubbles of the carrier gas float above the liquid precursor 110 and pass through the liquid level 140 of the liquid precursor, vapor generated by vaporization of the liquid precursor 110 in the bubbling chamber 100 is mixed with the carrier gas to form a mixed gas, and the mixed gas enters the outlet pipe 400 from the outlet port 130 in the region above the liquid level of the bubbling chamber.
The gas outlet pipe 400 outputs the mixed gas in the bubbling chamber 100 through the gas outlet port 130 and delivers the mixed gas into the corresponding processing chamber to process the surface of the substrate. The gas outlet pipe 400 is provided with a third end and a fourth end which are opposite, the third end is connected with the gas outlet port 130 of the bubbling chamber in a matching manner and is communicated with the gas outlet pipe 400 and the bubbling chamber 100, the third end is positioned above the liquid level 140 of the precursor, and the mixed gas of the bubbling chamber enters the gas outlet pipe 400 from the third end; the fourth end is located outside the bubbling chamber 100 and is connected to a corresponding processing chamber for delivering the mixed gas to the processing chamber for processing the substrate. The gas outlet pipe 400 is provided with a second control valve 410, and the second control valve 410 is used for controlling the gas in the gas outlet pipe to be delivered to the processing chamber. The first control valve 210 and the second control valve 410 may be selected from one-way control valves.
One end of the communication pipe 500 is connected with the air inlet pipe 200 at the downstream of the first control valve 210, and the other end of the communication pipe 500 is connected with the air outlet pipe 400 at the upstream of the second control valve 410; the communication duct 500 communicates the inlet duct 200 with the outlet duct 400. The communicating pipe 500 is provided with a third control valve 510 for controlling the transportation of the carrier gas in the communicating pipe 500. A fourth control valve 220 is further arranged on the air inlet pipeline 200; the connection point of the intake duct 200 and the communication duct 500 is set as point a, the fourth control valve 220 is located between the point a and the intake port 120 and includes point a, that is, the fourth control valve 220 may be disposed at the connection point of the intake duct 200 and the communication duct 500; a fourth control valve 220 is used to control the delivery of carrier gas to the bubbling chamber. Similarly, a fifth control valve 420 is further disposed on the outlet pipe 400; the junction between the outlet pipe 400 and the communication pipe 500 is set as point B, and the fifth control valve 420 is located between the point B and the outlet port 130 and includes point B, that is, the fifth control valve 420 may be disposed at the junction between the outlet pipe 400 and the communication pipe 500; a fifth control valve 420 is used to control the delivery of carrier gas to the bubbling chamber. The fourth control valve 220 and the fifth control valve 420 are one-way control valves or two-way control valves, and may be selected according to the set position.
When the gas supply system 10 delivers gas to the corresponding processing chamber to process a substrate, the first control valve 210 and the fourth control valve 220 on the gas inlet pipe, the second control valve 410 and the fifth control valve 420 on the gas outlet pipe are opened, the third control valve 510 on the communicating pipe is closed, the carrier gas in the carrier gas source enters the liquid precursor 110 through the gas inlet pipe 200, a mixed gas is formed in the bubbling chamber with the vaporized precursor vapor, and the gas outlet pipe 400 delivers the mixed gas in the bubbling chamber to the corresponding processing chamber to process the substrate.
When the substrate processing is completed, or the gas outlet pipeline needs to be cleaned for maintenance or the like, the first control valve 210 on the gas inlet pipeline, the third control valve 510 on the communication pipeline and the second control valve 410 on the gas outlet pipeline are opened, the fourth control valve 220 on the gas inlet pipeline and the fifth control valve 420 on the gas outlet pipeline are closed, the carrier gas in the gas inlet pipeline 200 enters the gas outlet pipeline 400 through the communication pipeline 500, and the gas outlet pipeline 400 is cleaned, so that the residual precursor and the like in the gas outlet pipeline are removed.
The present invention also provides a substrate processing apparatus, as shown in fig. 7, the substrate processing apparatus has a processing chamber 20, a base 30 is disposed in the processing chamber for carrying a substrate 40; the substrate processing apparatus also has a gas supply system 10 as described in any of the above for supplying a mixed gas to the processing chamber, the mixed gas comprising a carrier gas and a corresponding gas generated by vaporization of a liquid precursor 110, wherein the gaseous precursor is used to process a surface of a substrate in the processing chamber. The substrate processing device is used for carrying out chemical vapor deposition or atomic layer deposition and the like on a substrate.
In the gas supply system and the substrate processing device thereof provided by the utility model, the port of the gas inlet pipeline is provided with the flow divider with a plurality of gas channels, the carrier gas in the gas inlet pipeline is divided into a plurality of branch carrier gases to be led into the liquid precursor, thereby increasing the quantity of bubbles formed by the gas flow in the liquid precursor, enabling the bubbles to be uniformly generated and reducing the size of the bubbles, and further avoiding the generation of large bubbles and the long-distance liquid splashing caused by the burst of the large bubbles; the end setting of giving vent to anger of gas channel is in the region of keeping away from foaming chamber gas outlet among the shunt for the liquid drop is deviating from or even is deviated from the direction at foaming chamber gas outlet place and is splashed, and the liquid drop can not splash and fall in foaming chamber gas outlet, effectively avoids gas outlet's jam. In addition, the gas supply system is provided with a communication pipeline between the gas inlet pipeline and the gas outlet pipeline, and when gas supply is completed or equipment is overhauled and maintained, carrier gas in the gas inlet pipeline is introduced into the gas outlet pipeline through the communication pipeline, the gas outlet pipeline is cleaned, and residual precursors and the like in the gas outlet pipeline are removed. The utility model provides a gas supply system has solved the problem that the gas outlet of foaming cavity blockked up, can steadily, high-efficiently supply gas to its substrate processing apparatus, guarantee substrate processing apparatus's substrate processing rate and quality.
While the present invention has been described in detail with reference to the preferred embodiments thereof, it should be understood that the above description should not be taken as limiting the present invention. Numerous modifications and alterations to the present invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (15)
1. A gas supply system for a substrate processing apparatus, comprising:
a bubbling chamber containing a liquid precursor, the bubbling chamber including an inlet port and an outlet port;
a gas inlet pipe including a first end and a second end opposite to each other, wherein the first end is connected to a carrier gas source, the second end of the gas inlet pipe is located below the liquid level of the liquid precursor, and the gas inlet pipe is used for delivering the carrier gas into the liquid precursor through the gas inlet port;
the flow divider is arranged at the second end of the gas inlet pipeline, a plurality of gas channels distributed in a scattering manner are arranged in the flow divider, each gas channel is communicated with the gas inlet pipeline, the flow divider divides the carrier gas in the gas inlet pipeline into a plurality of branch carrier gases and then introduces the branch carrier gases into the liquid precursor for bubbling, and the introduced carrier gases and the steam generated by vaporization of the precursor form mixed gas; the flow divider comprises a first area and a second area, a first distance is formed between the gas outlet end of the gas channel in the first area and the gas outlet port of the foaming chamber, a second distance is formed between the gas outlet end of the gas channel in the second area and the gas outlet port of the foaming chamber, the second distance is larger than the first distance, and the number of the gas channels arranged on the first area of the flow divider is smaller than that of the gas channels arranged on the second area of the flow divider; an outlet conduit that delivers the mixed gas into a processing chamber through an outlet port of the bubbling chamber, the mixed gas being used to process a surface of a substrate.
2. The gas supply system for a substrate processing apparatus according to claim 1, wherein the gas inlet conduit has a first outlet area; the gas channel has a second outlet area; the second outlet area is less than the first outlet area.
3. The gas supply system for a substrate processing apparatus according to claim 2, wherein a carrier gas flow rate of said inlet pipe is equal to a sum of carrier gas flow rates of said plurality of gas passages.
4. The gas supply system for a substrate processing apparatus according to claim 1, wherein the direction of the carrier gas flowing out of the gas passage is parallel to a horizontal plane; alternatively, the first and second electrodes may be,
the direction of the carrier gas flowing out of the gas channel is inclined downwards and is directed to the bottom of the foaming chamber; alternatively, the first and second electrodes may be,
the direction of the carrier gas flowing out of the gas channel is inclined upwards and points to the liquid surface of the liquid precursor.
5. The gas supply system for a substrate processing apparatus according to claim 1, wherein the gas passage of the flow divider is provided only in the second region.
6. The gas supply system for a substrate processing apparatus according to claim 1, wherein a projection of the gas outlet port on a horizontal plane does not overlap a horizontal projection of the gas channel.
7. The gas supply system for a substrate processing apparatus according to claim 1, wherein the gas supply system further comprises a heater;
the heater is arranged around the periphery of the bubbling chamber and used for heating the liquid precursor in the bubbling chamber to volatilize the liquid precursor into a gaseous precursor, and the gaseous precursor and the carrier gas form the mixed gas.
8. The gas supply system for a substrate processing apparatus according to claim 1, wherein the gas inlet pipe is further provided with a first control valve for controlling the delivery of the carrier gas in the gas inlet pipe.
9. The gas supply system for a substrate processing apparatus of claim 8, wherein the gas outlet conduit comprises opposing third and fourth ends;
the third end is connected with the gas outlet port of the foaming cavity in a matching way, and the third end is positioned above the liquid level of the liquid precursor;
the fourth end is positioned outside the bubbling chamber and connected with the processing chamber and used for conveying the mixed gas into the processing chamber;
and the gas outlet pipeline is provided with a second control valve for controlling the transportation of gas in the gas outlet pipeline.
10. The gas supply system for a substrate processing apparatus according to claim 9, wherein the gas supply system further comprises a connecting pipe;
one end of the connecting pipeline is connected with the air inlet pipeline at the downstream of the first control valve, and the other end of the connecting pipeline is connected with the air outlet pipeline at the upstream of the second control valve;
the connecting pipeline is communicated with the gas inlet pipeline and the gas outlet pipeline and used for introducing the carrier gas into the gas outlet pipeline.
11. The gas supply system for a substrate processing apparatus according to claim 10, wherein a third control valve is provided on the connection pipe for controlling the delivery of the carrier gas in the connection pipe;
a fourth control valve is also arranged on the air inlet pipeline; the fourth control valve is positioned between the connection part of the gas inlet pipeline and the connecting pipeline and the gas inlet port and is used for controlling the delivery of the carrier gas to the foaming chamber;
a fifth control valve is also arranged on the air outlet pipeline; and the fifth control valve is positioned between the joint of the gas outlet pipeline and the connecting pipeline and the gas outlet port and is used for controlling the delivery of the carrier gas to the foaming chamber.
12. The gas supply system for a substrate processing apparatus of claim 1, wherein the precursor comprises a hydrocarbon or a metal-containing hydrocarbon or a halogen compound.
13. The gas supply system for a substrate processing apparatus according to claim 1, wherein the carrier gas comprises one or more of argon, nitrogen, and helium.
14. A substrate processing apparatus, comprising:
the processing chamber is internally provided with a base for bearing the substrate;
the gas supply system of any of claims 1-13, configured to provide a mixed gas into the processing chamber, the mixed gas containing a gaseous precursor for processing a surface of a substrate.
15. The substrate processing apparatus according to claim 14,
the substrate processing device is used for a chemical vapor deposition device or an atomic layer deposition device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222860276.XU CN218435942U (en) | 2022-10-28 | 2022-10-28 | Gas supply system and substrate processing apparatus thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222860276.XU CN218435942U (en) | 2022-10-28 | 2022-10-28 | Gas supply system and substrate processing apparatus thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218435942U true CN218435942U (en) | 2023-02-03 |
Family
ID=85073460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222860276.XU Active CN218435942U (en) | 2022-10-28 | 2022-10-28 | Gas supply system and substrate processing apparatus thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218435942U (en) |
-
2022
- 2022-10-28 CN CN202222860276.XU patent/CN218435942U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11680318B2 (en) | Vapor delivery device, methods of manufacture and methods of use thereof | |
| EP1242656B1 (en) | Method and apparatus for delivering precursors to a plurality of epitaxial reactor sites | |
| TWI509380B (en) | Vapor delivery system and vapor delivery methods | |
| US5916369A (en) | Gas inlets for wafer processing chamber | |
| CN101426953B (en) | Apparatus and methods for chemical vapor deposition | |
| US8980000B2 (en) | Density-matching alkyl push flow for vertical flow rotating disk reactors | |
| KR101447922B1 (en) | Vapor delivery device, methods of manufacture and methods of use thereof | |
| JP4303966B2 (en) | In particular, a method for depositing a crystalline film and an apparatus for carrying out the method | |
| TWI473653B (en) | Delivery device and method of use thereof | |
| CN104152870A (en) | Bubbler for constant vapor delivery of a solid chemical | |
| CN112695294A (en) | Semiconductor deposition reactor manifold | |
| US20030021595A1 (en) | Apparatus and method for vaporizing a liquid chemical | |
| US6261374B1 (en) | Clog resistant gas delivery system | |
| CN218435942U (en) | Gas supply system and substrate processing apparatus thereof | |
| KR20210146801A (en) | System and methods for direct liquid injection of vanadium precursors | |
| KR20220030862A (en) | Cyclon-type vaporizer | |
| EP1329540A2 (en) | An apparatus for the delivery of precursors in the vapour phase to epitaxial reactor sites | |
| US20200131630A1 (en) | Aerosol-free vessel for bubbling chemical precursors in a deposition process | |
| CN217214646U (en) | Conveying device and conveying system | |
| TW202419679A (en) | Gas delivery device and semiconductor processing device | |
| CN118007100A (en) | Gas delivery device and semiconductor processing device | |
| KR20210018885A (en) | Vaporization system | |
| JPH06163414A (en) | Semiconductor manufacturing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |