CN118007100A - Gas delivery device and semiconductor processing device - Google Patents
Gas delivery device and semiconductor processing device Download PDFInfo
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- CN118007100A CN118007100A CN202211395015.3A CN202211395015A CN118007100A CN 118007100 A CN118007100 A CN 118007100A CN 202211395015 A CN202211395015 A CN 202211395015A CN 118007100 A CN118007100 A CN 118007100A
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- conveying pipeline
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- 238000012545 processing Methods 0.000 title claims abstract description 45
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 239000002243 precursor Substances 0.000 claims abstract description 454
- 239000007789 gas Substances 0.000 claims abstract description 220
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims description 86
- 239000012159 carrier gas Substances 0.000 claims description 25
- 239000007921 spray Substances 0.000 claims description 22
- 239000012705 liquid precursor Substances 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 18
- 239000007787 solid Substances 0.000 claims description 11
- 239000006227 byproduct Substances 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims description 7
- 238000010790 dilution Methods 0.000 claims description 5
- 239000012895 dilution Substances 0.000 claims description 5
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 abstract description 21
- 238000009833 condensation Methods 0.000 abstract description 6
- 230000005494 condensation Effects 0.000 abstract description 6
- 238000010926 purge Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 15
- 239000003085 diluting agent Substances 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 8
- 230000001276 controlling effect Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000011144 upstream manufacturing Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 239000000376 reactant Substances 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- PPWNCLVNXGCGAF-UHFFFAOYSA-N 3,3-dimethylbut-1-yne Chemical compound CC(C)(C)C#C PPWNCLVNXGCGAF-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910003074 TiCl4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- VSLPMIMVDUOYFW-UHFFFAOYSA-N dimethylazanide;tantalum(5+) Chemical compound [Ta+5].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C VSLPMIMVDUOYFW-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a gas conveying device, which is used for supplying reaction gas to a substrate in a semiconductor processing device and comprises a first precursor source bottle and at least two precursor conveying pipelines; the gaseous precursor is jointly conveyed to the surface of the substrate of the semiconductor processing device through at least two precursor conveying pipelines, the temperature of each precursor conveying pipeline is lower than the pipeline temperature when only one precursor conveying pipeline exists, the risk of decomposition or condensation of the gaseous precursor in the conveying pipeline is reduced, and the use efficiency of the precursor is improved; or at least two precursor source bottles and corresponding precursor conveying pipelines are used for conveying the precursors to the substrate surface of the semiconductor processing device together, so that the supply amount of the precursors is ensured under the condition that the temperature of the precursor source bottles is not increased.
Description
Technical Field
The present invention relates to a gas delivery apparatus, and more particularly, to a gas delivery apparatus and a semiconductor processing apparatus.
Background
When a chemical vapor deposition (Chemical Vapor Deposition, hereinafter referred to as CVD) method is used to generate a thin film on the surface of a substrate in a vacuum reaction chamber, a high dose of precursor needs to be delivered into the reaction chamber to achieve a higher deposition rate, and the stability and consistency of the generated film are better; when a thin film is formed on a substrate surface in a vacuum reaction chamber by using an atomic layer deposition (Atomic Layer Deposition, ALD) method, a high-dose precursor input is required to make the step coverage (step coverage) of the prepared thin film higher.
The method for inputting the high-dose solid or liquid precursor commonly used at present is to increase the temperature of the gaseous precursor so as to increase the saturated vapor pressure of the precursor, thereby realizing the high-dose delivery of the precursor; however, when the precursor is transported at a higher temperature, the precursor transporting pipe needs to be maintained at a higher temperature to prevent the vaporized precursor from condensing in the precursor transporting pipe, and as the precursor is transported from the precursor source bottle to the reaction chamber, the temperature of the precursor transporting pipe increases stepwise, on one hand, this limits the transporting pipe and the components mounted on the transporting pipe, on the other hand, the temperature resistance of the transporting pipe and the components thereof (such as a valve, MFC (gas flow meter)) which are commonly used at present is lower, while the temperature of the precursor transporting pipe may need to reach about 200 ℃, which exceeds the temperature resistance limit of the transporting pipe and the components thereof, and affects the performance of the transporting pipe, on the other hand, for some precursor with poor stability, the precursor is easy to decompose in the high temperature transporting pipe, which not only reduces the use efficiency of the precursor and the use time of the precursor, but also affects the purity of the deposited film in the reaction chamber after the precursor enters the reaction chamber.
Disclosure of Invention
The invention aims to solve the problems that the prior precursor conveying process has high temperature resistance requirement on a conveying pipeline and components thereof, and precursor with poor stability is easy to decompose in the conveying pipeline, so that the precursor using efficiency is low.
To achieve the above object, the present invention provides a gas delivery apparatus for supplying a reaction gas to a substrate in a semiconductor processing apparatus, comprising:
A first precursor source vial containing a solid or liquid precursor within the interior of the first precursor source vial for providing a precursor to the semiconductor processing device;
The semiconductor processing device comprises a first precursor conveying pipeline and a second precursor conveying pipeline, wherein one end of the first precursor conveying pipeline is connected with one end of the second precursor conveying pipeline respectively with the first precursor source bottle, and the other end of the first precursor conveying pipeline is connected with the other end of the second precursor conveying pipeline respectively with the semiconductor processing device and used for conveying precursors in the first precursor source bottle into the semiconductor processing device through the first precursor conveying pipeline and the second precursor conveying pipeline.
Optionally, the gas delivery device further comprises a gas supply control device, which is disposed in the first precursor delivery pipe and the second precursor delivery pipe, respectively;
the gas supply control device includes a valve for supplying and stopping the gas and a flow rate adjusting unit for adjusting the flow rate of the gas.
Optionally, a buffer tank is further included, which is disposed in the first precursor delivery pipe and the second precursor delivery pipe, respectively, for storing a precursor gas, and the valve of the gas supply control device is disposed downstream of the buffer tank.
Optionally, the first precursor source bottle comprises a heating device for heating the source bottle to sublimate or vaporize the precursor inside the source bottle.
Optionally, the first precursor source bottle includes a carrier gas channel, and the precursor is carried out of the source bottle by introducing carrier gas.
Optionally, the downstream of the first precursor source bottle includes a dilution gas conduit, which is in communication with the first precursor delivery conduit and/or the second precursor delivery conduit, for introducing a dilution gas to dilute the precursor amount introduced into the first precursor delivery conduit and/or the second precursor delivery conduit.
Optionally, the decomposition temperature of the precursor is higher than 100 ℃.
Optionally, the precursor is TiCl 4.
Based on the gas conveying device, the invention also provides a semiconductor processing device which adopts the gas conveying device to convey reaction gas, and comprises a reaction cavity, wherein a gas spray head and a base for bearing a substrate are arranged in the reaction cavity;
The gas spray head is connected with the first precursor conveying pipeline and the second precursor conveying pipeline and is used for conveying precursors into the reaction cavity and processing the substrate on the base;
and the reaction cavity is also provided with a gas outlet for discharging reaction byproducts in the reaction cavity.
The present invention also provides another gas delivery apparatus for supplying a reactive gas to a substrate within a semiconductor processing apparatus, comprising:
the semiconductor processing device comprises a first precursor source bottle and a second precursor source bottle, wherein the first precursor source bottle and the second precursor source bottle contain the same solid or liquid precursor and are used for providing the precursor for the semiconductor processing device;
A first precursor delivery conduit, one end of the first precursor delivery conduit being coupled to the first precursor source vial, the other end of the first precursor delivery conduit being coupled to the semiconductor processing apparatus;
a second precursor delivery conduit, one end of which is connected to the second precursor source vial, the other end of which is connected to the semiconductor processing apparatus;
The first precursor delivery conduit and the second precursor delivery conduit are configured to deliver the precursors in the first precursor source bottle and the second precursor source bottle into the semiconductor processing apparatus through the first precursor delivery conduit and the second precursor delivery conduit.
Optionally, the gas delivery device further comprises a gas supply control device, which is disposed in the first precursor delivery pipe and the second precursor delivery pipe, respectively;
the gas supply control device includes a valve for supplying and stopping the gas and a flow rate adjusting unit for adjusting the flow rate of the gas.
Optionally, the gas delivery device further comprises a buffer tank disposed in the first precursor delivery pipe and the second precursor delivery pipe, respectively, for storing a precursor gas, and the valve of the gas supply control device is disposed downstream of the buffer tank.
Optionally, the first precursor source bottle and the second precursor source bottle comprise a heating device for heating the first precursor source bottle and the second precursor source bottle to sublimate or vaporize the precursor inside the source bottle.
Optionally, the first precursor source bottle and the second precursor source bottle comprise a carrier gas channel, and the precursor is carried out of the source bottle by introducing carrier gas.
Optionally, the decomposition temperature of the precursor is below 100 ℃.
Optionally, the precursor is TDMAT, PDMAT or CCTBA.
Based on the gas conveying device, the invention also provides another semiconductor processing device which adopts the gas conveying device to convey reaction gas, wherein the reaction device comprises a reaction cavity, and a gas spray head and a base for bearing a substrate are arranged in the reaction cavity;
The gas spray head is connected with the first precursor conveying pipeline and the second precursor conveying pipeline and is used for conveying precursors into the reaction cavity and processing the substrate on the base;
and the reaction cavity is also provided with a gas outlet for discharging reaction byproducts in the reaction cavity.
Compared with the prior art, the invention has at least the following beneficial effects;
(1) According to the two precursor conveying pipelines provided by the invention, the precursor amount in each precursor conveying pipeline is smaller than that of a precursor with only one precursor conveying pipeline, and the temperature of each precursor conveying pipeline is lower than that of a pipeline with only one precursor conveying pipeline, so that the risk of decomposition of a gaseous precursor in the conveying pipeline is reduced, and the use efficiency of the precursor is improved under the condition that the same dosage of precursor is provided for the semiconductor processing device;
(2) The concentration of the precursor in the two precursor conveying pipelines is reduced compared with that of only one conveying pipeline, so that each precursor conveying pipeline does not need to be maintained at a higher temperature to prevent solid or liquid precursor from condensing in the pipeline, and the temperature resistance requirement on the precursor conveying pipeline and components thereof is reduced;
(3) According to the invention, the buffer tanks are arranged on the two precursor conveying pipelines, so that the pressure of the gaseous precursor output by each buffer tank is lower than that of the precursor when only one buffer tank exists, and the safety risk is reduced under the condition that the same dosage of precursor is provided for the semiconductor processing device.
Drawings
FIG. 1 is a schematic diagram of a prior art gas delivery apparatus and a semiconductor processing apparatus;
FIG. 2 is a schematic view of a gas delivery apparatus and a semiconductor processing apparatus according to the present invention;
Fig. 3 is a schematic view of a gas delivery apparatus and a semiconductor processing apparatus according to another embodiment of the present invention.
Detailed Description
The technical scheme, constructional features, achieved objects and effects of the embodiments of the present invention will be described in detail below with reference to fig. 1 to 3 in the embodiments of the present invention.
It should be noted that, the drawings are in very simplified form and all use non-precise proportions, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention, and are not intended to limit the implementation conditions of the present invention, so that the present invention has no technical significance, and any modification of structure, change of proportion or adjustment of size, without affecting the efficacy and achievement of the present invention, should still fall within the scope covered by the technical content disclosed by the present invention.
It is noted that in the present invention, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
In order to achieve higher deposition rate and better film forming performance when depositing thin films on the substrate surface by adopting an ALD method or a CVD method, the dosage of the precursor introduced into the reaction cavity needs to be increased, and in order to achieve the purpose, when solid or liquid precursor is conveyed, the method adopted at present is to increase the temperature of the precursor to increase the saturated vapor pressure of the precursor so as to enable the precursor introduced into the reaction cavity to reach the required dosage.
Taking deposition and growth of TiN by using an ALD device as an example, the reaction gas is TiCl 4 and ammonia (NH 3), and the nitrogen is purge gas, as shown in FIG. 1, the ALD device comprises a reaction chamber 10; a base 18 is arranged at the bottom in the reaction chamber 10, a substrate W is carried on the base 18, a gas spray head 17 is arranged at the top in the reaction chamber 10, and reaction gas and/or purge gas is introduced into the reaction chamber 10 through the gas spray head 17; the two reaction gases and the purge gas are alternately and circularly conveyed to the surface of the substrate W on the base 18 and deposited to generate TiN; the side wall or bottom of the reaction chamber 10 is further provided with a gas discharge port 19 for discharging reaction byproducts within the reaction chamber 10. The gas spray head 17 is connected with an external gas conveying device, and the gas conveying device comprises a first reaction gas conveying device, a second reaction gas conveying device and a purge gas conveying device; the first reaction gas conveying device is used for conveying vaporized precursor TiCl 4 and comprises a precursor source bottle 14 and a first reaction gas conveying pipeline 13, the first end of the first reaction gas conveying pipeline 13 is connected with the source bottle 14, and the second end of the first reaction gas conveying pipeline is connected with the gas spray head 17; the second reactant gas delivery apparatus is configured to deliver a reactant gas NH 3, and includes a second reactant gas delivery conduit 12; the purge gas delivery device is used for delivering purge gas N 2, and comprises a purge gas delivery pipeline 11.
The liquid precursor reaction source TiCl 4 is stored in the precursor source bottle 14, and the precursor source bottle 14 may further include a heating device, and the heating device heats the liquid precursor TiCl 4 to vaporize the gaseous precursor TiCl 4 into the first reaction gas delivery pipe 13; a buffer tank 15 is arranged on the first reaction gas conveying pipeline 13 and is used for storing gaseous precursor TiCl 4; when a high-content precursor needs to be introduced into the gas spray head 17, on one hand, the concentration of the gaseous precursor TiCl 4 output by the precursor source bottle 14 needs to reach a higher level, and on the other hand, the buffer tank 15 on the first reaction gas conveying pipeline 13 needs to store the gaseous precursor TiCl 4 to a certain pressure and then release the gaseous precursor into the gas spray head 17; for higher concentrations of gaseous precursors, the temperature of the delivery conduit needs to be higher than the source bottle heating temperature of the gaseous precursor in order to prevent it from condensing within the delivery conduit; the accumulation of gaseous precursor to a certain pressure in buffer tank 15 and the release of the same results in the pressure of gaseous precursor output from buffer tank 15 being necessarily greater than the precursor pressure upstream of buffer tank 15, considering that the greater the pressure, the higher the corresponding conduit temperature, the higher the temperature at the delivery conduit and other components (such as valve 16) downstream of buffer tank 15, in order to prevent condensation of the precursor; thus, for the first reactant gas delivery pipe 13, the pipe temperature downstream of the buffer tank 15 is greater than the pipe temperature upstream of the buffer tank 15, and the pipe temperature upstream of the buffer tank 15 is greater than the pipe temperature downstream of the first reactant source bottle 14. In general, the temperature of the delivery pipe needs to reach more than 200 ℃ to enable the precursor amount introduced into the gas shower head 17 to reach the requirement, but the currently used delivery pipe and components thereof, particularly the valve component 16, generally have a temperature resistance lower than 200 ℃, and exceeding the temperature affects the performance of the valve component 16, so that the current delivery pipe and components thereof cannot meet the requirement of the delivery temperature of the precursor. On the other hand, when the precursor is stored in the buffer tank 15 to a certain pressure, there is a certain safety risk due to the excessively high pressure in the buffer tank 15.
In order to solve the above-mentioned problems, this embodiment proposes a gas delivery apparatus, still described by taking TiCl 4 as an example of a precursor reaction source, as shown in fig. 2, comprising: a first precursor source bottle 20 containing a liquid precursor TiCl 4 therein for supplying a precursor reaction source TiCl 4 to the reaction chamber 10; a first precursor delivery pipe 23 and a second precursor delivery pipe 24, wherein the first ends of the two delivery pipes are respectively connected with the first precursor source bottle 20, and the second ends of the two delivery pipes are respectively connected with the gas spray head 17 in the reaction chamber 10; the precursor in the first precursor source bottle 20 is transferred into the reaction chamber 10 through the first precursor transfer pipe 23 and the second precursor transfer pipe 24.
In some embodiments, the first precursor source bottle 20 comprises a heating device (not shown) for heating the liquid precursor TiCl 4 in the first precursor source bottle 20 to vaporize it into a gaseous state, and as the heating is performed, the gas pressure in the first precursor source bottle 20 increases, and the vaporized gaseous precursor TiCl 4 therein enters the first precursor delivery pipe 23 and the second precursor delivery pipe 24.
In some other embodiments, a carrier gas channel 21 may also be provided, the carrier gas channel 21 providing a carrier gas to carry the gaseous precursor TiCl 4 in the first precursor source bottle 20 out of the source bottle and into the first precursor delivery conduit 23 and the second precursor delivery conduit 24. An inert gas such as nitrogen is generally used as a carrier gas. The bottom end of the carrier gas channel 21 may be below the level of the liquid precursor TiCl 4, and in some other embodiments, the bottom end of the carrier gas channel 21 may also be above the level of the liquid precursor TiCl 4.
In some other embodiments, a carrier gas delivery channel (not shown) is also provided on the first precursor delivery conduit 23, and a carrier gas delivery channel (not shown) is also provided on the second precursor delivery conduit 24 for delivering gaseous precursor into the reaction chamber 10.
In order to adjust the concentration of gaseous precursor TiCl 4 entering both delivery lines, in some other embodiments, a diluent gas channel is provided downstream of the first precursor source bottle 20 for introducing a diluent gas to dilute the precursor concentrations introduced into the first precursor delivery line 23 and the second precursor delivery line 24.
As shown in fig. 2, the present embodiment includes two diluent gas channels DG1 and DG2, which are respectively connected to the connection positions of the first precursor delivery pipe 23 and the second precursor delivery pipe 24 and the output port of the first precursor source bottle 20, and the equal amount of diluent gas with equal concentration is respectively introduced into the two precursor delivery pipes through the diluent gas channels, so as to adjust the amounts of the precursor entering the two precursor delivery pipes.
In another embodiment, only one diluent gas channel may be provided and connected to the output port of the first precursor source bottle 20, so that the diluent gas is mixed with the gaseous precursor TiCl 4 through the diluent gas channel for dilution and then enters the first precursor delivery pipe 23 and the second precursor delivery pipe 24, respectively.
In some other embodiments, the gas delivery device may further include a plurality of precursor delivery pipes, one ends of the plurality of precursor delivery pipes are connected to the first precursor source bottle 20, and the other ends of the plurality of precursor delivery pipes are connected to the reaction chamber 10, so as to deliver the same kind of precursor to the reaction chamber 10.
In some other embodiments, a precursor refill line is also provided on the first precursor source vial 20, the precursor refill line being connected to a precursor refill vial. When the amount of the precursor in the first precursor source bottle 20 is insufficient, the precursor is replenished into the first precursor source bottle 20 through the precursor replenishing bottle and the precursor replenishing pipe.
In some embodiments, the first precursor delivery conduit 23 and the second precursor delivery conduit 24 may comprise: a buffer tank 25 for storing a precursor gaseous precursor TiCl 4; and a gas supply control device for controlling the flow of the gas in the two transport pipes and the flow rate, the gas supply control device including a valve 26 for supplying and stopping the gas and a flow rate adjusting portion 27 for adjusting the flow rate of the gas.
The two buffer tanks 25 are respectively arranged at the downstream of the first precursor conveying pipeline 23 and the second precursor conveying pipeline 24 and are used for storing the gaseous precursor entering the buffer tanks 25 through the two precursor conveying pipelines; the two flow rate adjustment sections 27 are provided upstream of the two buffer tanks 25, respectively, and supply the gaseous precursors in the first precursor delivery pipe 23 and the second precursor delivery pipe 24 to the buffer tanks 25 at predetermined flow rates, respectively; the valve 26 is arranged at the downstream of the buffer tank 25, and the corresponding valves 26 on the first precursor conveying pipeline 23 and the second precursor conveying pipeline 24 are opened simultaneously, so that the precursors in the buffer tanks 25 on the two precursor conveying pipelines are simultaneously supplied into the gas spray head 17, and the corresponding valves 26 on the first precursor conveying pipeline 23 and the second precursor conveying pipeline 24 are closed simultaneously, so that the precursors in the buffer tanks 25 on the two precursor conveying pipelines simultaneously stop entering the gas spray head 17.
In order to make the amount of the precursor delivered into the gas shower head 17 reach a higher value, as described above, the concentration of the gaseous precursor output from the first precursor source bottle 20 needs to reach a higher level, and at the same time, the pressure of the gaseous precursor TiCl 4 introduced into the gas shower head 17 also reaches a certain value; by adopting the gas conveying device of this embodiment, the high-concentration gaseous precursor output from the first precursor source bottle 20 enters into the two precursor conveying pipelines, and the diluent gas is introduced, so that the concentration of the precursor in each pipeline is lower than that of the precursor output from the first precursor source bottle 20, and when the concentration of the precursor output from the first precursor source bottle is the same, the precursor amount in each precursor conveying pipeline is smaller than that of the precursor with only one precursor conveying pipeline, so that the concentration of the gaseous precursor in each precursor conveying pipeline is also smaller than that of the gaseous precursor with only one precursor conveying pipeline, and the condensation temperature of the gaseous precursor is reduced due to the reduction of the concentration, so that the gaseous precursor is less prone to condensation in the conveying pipeline.
In some other embodiments, each of the precursor delivery pipes is provided with a buffer tank 25, which can store the precursors in the two precursor delivery pipes to a certain pressure, and the pressure only needs to be half of the pressure of the gaseous precursor required by the gas spray header 17, so that the safety risk is reduced, and the pressure of the gaseous precursor output by the buffer tank is reduced, thereby reducing the condensation temperature of the gaseous precursor and reducing the probability of condensation of the gaseous precursor in the delivery pipes.
When the gas delivery device provides the precursor reaction source TiCl 4 to the reaction chamber 10, it is further necessary to provide the reactive gas NH 3 to the reaction chamber 10 through a second reaction gas delivery device, and provide the purge gas N 2 through a purge gas delivery device, where the second reaction gas delivery device includes a second reaction gas delivery pipe 12, a carrier gas delivery channel (not shown) may be disposed on the second reaction gas delivery pipe, the purge gas delivery device includes a purge gas delivery pipe 11, and a carrier gas delivery channel (not shown) may also be disposed on the purge gas delivery pipe 11, where the carrier gas delivery channel is used to deliver the second reaction gas and/or the purge gas to the reaction chamber 10; like the two precursor delivery pipes, the second reactive gas delivery pipe 12 may also include a buffer tank 25 for storing the second reactive gas NH 3 and a gas supply control device for controlling the flow and the flow rate of the gas in the pipe, the gas supply control device including a flow rate adjustment section 27 for adjusting the flow rate of the gas and a valve 26 for controlling the supply/stop of the second reactive gas NH 3 into the gas shower head 17; the purge gas delivery pipe 11 also includes a buffer tank 25 for storing purge gas N 2 and a gas supply control device for controlling the flow and flow rate of the gas in the pipe, the gas supply control device including a flow rate adjusting portion 27 for adjusting the flow rate of the gas and a valve 26 for controlling the supply/stop of the purge gas N 2 into the gas shower head 17.
By adopting the gas delivery device, in the ALD process, the flow rate of the gas entering the buffer tank 25 of each gas delivery pipeline is regulated by the flow rate regulating part 27 on each gas delivery pipeline, after the inside of the buffer tank 25 reaches the specified pressure, the corresponding valve 26 on each gas delivery pipeline is alternately and circularly opened, so that the gaseous precursor TiCl 4, the reactive gas NH 3 and the purge gas N 2 alternately circulate into the gas spray head 17, flow to the surface of the substrate W above the base 18 in the reaction cavity 10, and the TiN layer is deposited on the surface of the substrate W in a reaction mode to the specified thickness; wherein, corresponding valves 26 on the first precursor delivery pipe 23 and the second precursor delivery pipe 24 are opened or closed simultaneously, so that the gaseous precursor TiCl 4 in the first precursor delivery pipe 23 and the second precursor delivery pipe 24 simultaneously enters the gas spray head 17 to reach the required precursor amount.
In the CVD process, by opening/closing the corresponding valves 26 on the respective gas delivery pipes, the gaseous precursor TiCl 4, the reactive gas NH 3, and the purge gas N 2 are introduced into the gas shower head 17 by the gas flow rate in the respective gas delivery pipes by the flow rate adjustment part 27 on the respective gas delivery pipes, and flow to the surface of the substrate W above the susceptor 18 in the reaction chamber 10, on which the TiN layer is deposited by reaction to a prescribed thickness; wherein corresponding valves 26 on the first precursor delivery pipe 23 and the second precursor delivery pipe 24 are opened or closed simultaneously, so that gaseous precursor TiCl4 in the first precursor delivery pipe 23 and the second precursor delivery pipe 24 simultaneously enters the gas shower head 17 to reach the required precursor amount.
Preferably, the flow rate adjusting portions 27 on the first precursor delivery pipe 23 and the second precursor delivery pipe 24 are synchronously adjusted so that the pressures in the buffer tanks 25 on both precursor pipes are synchronously changed.
In another embodiment, the first precursor delivery pipe 23 and the second precursor delivery pipe 24 share a valve 26 and a flow rate adjustment portion 27; the flow rate adjusting part 27 is arranged at the downstream of the first precursor source bottle 20 and at the upstream of the two precursor delivery pipes, and the flow rates of the precursors entering the two precursor delivery pipes are simultaneously adjusted by the flow rate adjusting part 27, so that the flow rates of the precursors entering the two buffer tanks 25 on the first precursor delivery pipe 23 and the second precursor delivery pipe 24 are simultaneously adjusted; the valve 26 is disposed upstream of the gas shower 17, and the precursor in the first precursor delivery line 23 and the second precursor delivery line 24 enters the gas shower 17 through the same valve 26, and the supply/stop of the precursor in both precursor delivery lines is controlled simultaneously by the valve 26.
In still another embodiment, in addition to the above-described valve 26 for controlling the gas in the buffer tank 25 to enter the gas shower head 17, the gas supply control device is provided with a plurality of valves as needed, and the valves are not limited to being provided downstream of the buffer tank 25, and may be provided at various positions of each gas delivery pipe as needed, such as downstream of the first precursor source bottle 20, upstream or downstream of the flow rate adjusting section 27, etc.; the number of valves on each gas delivery conduit may be the same or different.
Although the liquid precursor TiCl 4 is adopted as the precursor source in the first precursor source bottle 20 in the present embodiment, this is not a limitation of the present invention, and when depositing other types of thin films, a corresponding type of solid precursor or liquid precursor is selected to be placed in the first precursor source bottle 20, and the solid precursor is sublimated into a gas state into two precursor delivery pipes by heating, or the liquid precursor is vaporized into a gas state into two precursor delivery pipes.
Although the gas delivery device of the present invention is described by way of example in the present embodiment, the gas delivery device is also applicable to a CVD method requiring the supply of a gaseous precursor, and when used in a CVD chamber, the gas supply control device includes a valve 26 for supplying/stopping a gas and a flow rate adjusting portion 27 for adjusting a flow rate of the gas, and does not include the buffer tank 25 for storing the gas.
Based on the above gas delivery device, the present embodiment further provides a semiconductor processing device, including: a reaction chamber 10 in which a gas shower head 17 and a susceptor 18 for carrying a substrate W are disposed; the gas spray head 17 is connected with a first precursor conveying pipeline 23 and a second precursor conveying pipeline 24, and is used for conveying a precursor into the reaction cavity 10 and processing a substrate W on the base 18; the reaction chamber 10 is further provided with a gas outlet 19 for discharging reaction byproducts in the reaction chamber 10.
The gas conveying device and the semiconductor processing device can reduce the temperature resistance requirement on the precursor conveying pipeline and components thereof, but for certain precursors with low decomposition temperature and low saturated steam pressure, especially organic precursors, such as precursors with decomposition temperature less than 100 ℃ such as tetra (dimethylamino) titanium (hereinafter referred to as TDMAT), penta (dimethylamino) tantalum (hereinafter referred to as PDMAT), and 3, 3-dimethyl-1-butyne) hexacarbonyl cobalt (hereinafter referred to as CCTBA), in order to enable enough precursors to reach a reaction cavity, the process requirement cannot be met by conveying the precursors through only one precursor source bottle.
To solve this problem, the present embodiment provides another gas delivery apparatus for delivering a precursor reaction source CCTBA for ALD preparation of a cobalt-containing compound layer, as shown in fig. 3, comprising: a first precursor source bottle 30 and a second precursor source bottle 30', wherein the interiors of the first precursor source bottle 30 and the second precursor source bottle 30' both contain a liquid precursor CCTBA for providing a precursor reaction source CCTBA to the reaction chamber 10; a first precursor conveying pipeline 33, wherein one end of the first precursor conveying pipeline 33 is connected with the first precursor source bottle 30, and the other end of the first precursor conveying pipeline 33 is connected with the gas spray head 17 of the reaction cavity 10; one end of the second precursor conveying pipeline 34 is connected with the second precursor source bottle 30', and the other end of the second precursor conveying pipeline 34 is connected with the gas spray head 17 of the reaction cavity 10; the first precursor conveying pipe 33 and the second precursor conveying pipe 34 are used for conveying the precursor reaction sources CCTBA in the first precursor source bottle 30 and the second precursor source bottle 30' to the gas shower head 17 respectively, a carrier gas conveying pipe (not shown) may be disposed on the first precursor conveying pipe 33, and a carrier gas conveying pipe (not shown) may also be disposed on the second precursor conveying pipe 34, and the carrier gas conveying pipe is used for conveying the precursor to the reaction chamber 10.
The first precursor source bottle 30 and the second precursor source bottle 30 'each comprise a heating device (not shown) for heating the liquid precursor CCTBA in the first precursor source bottle 30 and the second precursor source bottle 30' to vaporize the liquid precursor CCTBA into a gas state, and the gas pressure in the first precursor source bottle 30 and the second precursor source bottle 30 'increases along with the heating, so that the gas precursor CCTBA in the first precursor source bottle 30 and the second precursor source bottle 30' respectively enter the first precursor conveying pipeline 33 and the second precursor conveying pipeline 34.
In some embodiments, a carrier gas channel (not shown) may be further disposed in each of the first precursor source bottle 30 and the second precursor source bottle 30', and the gaseous CCTBA in the first precursor source bottle 30 and the second precursor source bottle 30' may be carried into the first precursor delivery pipe 33 and the second precursor delivery pipe 34 by the carrier gas. An inert gas such as nitrogen is generally used as a carrier gas.
In some other embodiments, the gas delivery device may further comprise a plurality of precursor source bottles and a plurality of precursor delivery pipes, wherein one end of each precursor delivery pipe is connected to one precursor source bottle, and the other end of each precursor delivery pipe is connected to the reaction chamber 10 for delivering the same kind of precursor to the reaction chamber 10.
In some other embodiments, a precursor refill tube is also provided on each of the precursor source bottles, respectively, the precursor refill tube being connected to a precursor refill bottle. When the precursor amount in each precursor source bottle is insufficient, the precursor is replenished into each precursor source bottle through the precursor replenishing bottle and the precursor replenishing pipeline.
As in the previous embodiments, the first precursor delivery line 33 and the second precursor delivery line 34 each include: a buffer tank 35 for storing a precursor gaseous precursor CCTBA; and a gas supply control device for controlling the flow of the gas in the two transport pipes and the flow rate, respectively, the gas supply control device including a valve 36 for supplying/stopping the gas and a flow rate adjusting portion 37 for adjusting the flow rate of the gas.
The installation positions and functions of the buffer tank 35, the valve 36 and the flow rate adjusting portion 37 are the same as those of the above-described embodiment, and thus will not be described in detail here.
In another embodiment, in addition to the above-described valve 36 for controlling the gas in the buffer tank 35 to enter the gas shower head 17, the gas supply control device may be provided with a plurality of valves as needed, and the valves are not limited to being provided downstream of the buffer tank 35, and may be provided at various positions of each gas delivery pipe as needed, such as downstream of the first precursor source bottle 30 and the second precursor source bottle 30', upstream or downstream of the flow rate adjusting portion 37, and the like; the number of valves on each gas delivery conduit may be the same or different.
When the gaseous CCTBA is transferred to the reaction chamber 10 by the gas transfer device, the reaction chamber 10 needs to be inputted with a high content of gaseous CCTBA, and the gaseous CCTBA can be decomposed seriously at about 40-50 ℃, but in this embodiment, by providing two sets of precursor transfer pipelines, only half of the gaseous CCTBA needs to be provided for each set of pipelines, that is, the concentration and the steam content of the gaseous CCTBA outputted by the first precursor source bottle 30 and the second precursor source bottle 30' need only to be half of the gaseous CCTBA outputted by only one precursor source bottle, thereby further reducing the temperature of the transfer pipeline and the components thereof, and keeping the gaseous CCTBA stable and not decomposed in the transfer pipeline.
Because the CCTBA has low decomposition temperature and low saturated vapor pressure, in order to input high-content gaseous CCTBA, two CCTBA precursor source bottles are provided in the embodiment, so that the precursor amount input into the reaction chamber meets the process requirement under the condition of not increasing the temperature of the precursor source bottles.
Also, in the same manner as in the embodiment of fig. 2, when the above-mentioned gas delivery device is used to provide the precursor reaction source for the reaction chamber 10, it is also necessary to provide the reactive gas for the reaction chamber 10 through the second reaction gas delivery device, and provide the purge gas through the purge gas delivery device, which is not described herein again.
It should be noted that when the gaseous precursor is supplied to the reaction chamber 10 using the above-described gas delivery device, the precursors in the first precursor delivery pipe 33 and the second precursor delivery pipe 34 are controlled to be simultaneously supplied/stopped to the reaction chamber 10.
In another embodiment, other types of solid precursors (e.g., PDMAT) or liquid precursors (e.g., TDMAT) are used and simultaneously placed in the first precursor source vial 30 and the second precursor source vial 30', in combination with the corresponding second reactive gas and purge gas, to deposit a corresponding thin film on the surface of the substrate W on the susceptor 18.
In other embodiments, the solid or liquid precursor may also be other tungsten-containing precursors, titanium-containing precursors, tantalum-containing precursors, cobalt-containing precursors, gallium-containing precursors, aluminum-containing precursors, ruthenium-containing precursors, or the like.
In still another embodiment, the reaction chamber 10 is a CVD reaction chamber, and the gas supply control means includes a valve 36 for supplying/stopping a gas and a flow rate adjusting part 37 for adjusting a flow rate of the gas, while the buffer tank 35 for storing the gas may not be included.
Based on the above gas delivery device, the present embodiment further provides a semiconductor processing device, including: a reaction chamber 10 in which a gas shower head 17 and a susceptor 18 for carrying a substrate W are disposed; the gas spray head 17 is connected with the first precursor conveying pipeline 33 and the second precursor conveying pipeline 34, and is used for conveying gaseous precursors into the reaction cavity 10 to process the substrate W on the base 18; the reaction chamber 10 is further provided with a gas outlet 19 for discharging reaction byproducts in the reaction chamber 10.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (17)
1. A gas delivery apparatus for supplying a reactive gas to a substrate in a semiconductor processing apparatus, comprising:
A first precursor source vial containing a solid or liquid precursor within the interior of the first precursor source vial for providing a precursor to the semiconductor processing device;
The semiconductor processing device comprises a first precursor conveying pipeline and a second precursor conveying pipeline, wherein one end of the first precursor conveying pipeline is connected with one end of the second precursor conveying pipeline respectively with the first precursor source bottle, and the other end of the first precursor conveying pipeline is connected with the other end of the second precursor conveying pipeline respectively with the semiconductor processing device and used for conveying precursors in the first precursor source bottle into the semiconductor processing device through the first precursor conveying pipeline and the second precursor conveying pipeline.
2. The gas delivery apparatus according to claim 1, further comprising a gas supply control device provided in the first precursor delivery pipe and the second precursor delivery pipe, respectively;
the gas supply control device includes a valve for supplying and stopping the gas and a flow rate adjusting unit for adjusting the flow rate of the gas.
3. The gas delivery apparatus according to claim 2, further comprising a buffer tank provided in the first precursor delivery pipe and the second precursor delivery pipe, respectively, for storing a precursor gas, the valve of the gas supply control apparatus being provided downstream of the buffer tank.
4. The gas delivery apparatus of claim 1, wherein the first precursor source vessel comprises heating means for heating the source vessel to sublimate or vaporize precursor within the source vessel.
5. The gas delivery apparatus of claim 1, wherein the first precursor source bottle comprises a carrier gas channel through which carrier gas is introduced to carry the precursor out of the source bottle.
6. The gas delivery apparatus of claim 4 or 5, wherein the downstream of the first precursor source bottle comprises a dilution gas conduit in communication with the first precursor delivery conduit and/or the second precursor delivery conduit for introducing a dilution gas to dilute the precursor introduced into the first precursor delivery conduit and/or the second precursor delivery conduit.
7. The gas delivery device of claim 1, wherein the precursor has a decomposition temperature greater than 100 ℃.
8. The gas delivery device of claim 7, wherein the precursor is TiCl 4.
9. A semiconductor processing apparatus for delivering a reactive gas using the gas delivery apparatus according to any one of claims 1 to 8, comprising a reaction chamber having a gas shower head and a susceptor for supporting a substrate disposed therein;
The gas spray head is connected with the first precursor conveying pipeline and the second precursor conveying pipeline and is used for conveying precursors into the reaction cavity and processing the substrate on the base;
and the reaction cavity is also provided with a gas outlet for discharging reaction byproducts in the reaction cavity.
10. A gas delivery apparatus for supplying a reactive gas to a substrate in a semiconductor processing apparatus, comprising:
the semiconductor processing device comprises a first precursor source bottle and a second precursor source bottle, wherein the first precursor source bottle and the second precursor source bottle contain the same solid or liquid precursor and are used for providing the precursor for the semiconductor processing device;
A first precursor delivery conduit, one end of the first precursor delivery conduit being coupled to the first precursor source vial, the other end of the first precursor delivery conduit being coupled to the semiconductor processing apparatus;
A second precursor delivery conduit, one end of which is connected to the second precursor source vial, the other end of which is connected to the semiconductor processing apparatus; the first precursor delivery conduit and the second precursor delivery conduit are configured to deliver the precursors in the first precursor source bottle and the second precursor source bottle into the semiconductor processing apparatus through the first precursor delivery conduit and the second precursor delivery conduit.
11. The gas delivery apparatus according to claim 10, further comprising a gas supply control device provided in the first precursor delivery pipe and the second precursor delivery pipe, respectively; the gas supply control device includes a valve for supplying and stopping the gas and a flow rate adjusting unit for adjusting the flow rate of the gas.
12. The gas delivery apparatus according to claim 11, further comprising a buffer tank provided in the first precursor delivery pipe and the second precursor delivery pipe, respectively, for storing a precursor gas, the valve of the gas supply control apparatus being provided downstream of the buffer tank.
13. The gas delivery apparatus of claim 10, wherein the first precursor source vessel and the second precursor source vessel comprise heating means for heating the first precursor source vessel and the second precursor source vessel to sublimate or vaporize a precursor within the source vessel.
14. The gas delivery apparatus of claim 10, wherein the first precursor source bottle and the second precursor source bottle comprise a carrier gas channel through which the precursor is carried out of the source bottle by a carrier gas.
15. The gas delivery device of claim 10, wherein the precursor has a decomposition temperature of less than 100 ℃.
16. The gas delivery device of claim 15, wherein the precursor is PDMAT, TDMAT, or CCTBA.
17. A semiconductor processing apparatus for delivering a reactive gas using the gas delivery apparatus according to any one of claims 11 to 16, comprising a reaction chamber having a gas shower head and a susceptor for supporting a substrate disposed therein;
The gas spray head is connected with the first precursor conveying pipeline and the second precursor conveying pipeline and is used for conveying precursors into the reaction cavity and processing the substrate on the base;
and the reaction cavity is also provided with a gas outlet for discharging reaction byproducts in the reaction cavity.
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| CN202211395015.3A CN118007100A (en) | 2022-11-08 | 2022-11-08 | Gas delivery device and semiconductor processing device |
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